BQ24104RHLR

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 bq241xx Synchronous Switched-Mode, Li-Ion and Li-Polymer Charge-Management IC With Integrated Power FETs (bqSWITCHER™) 1 Features 2 Applications • • • • • 1 • • • • • • • • • • • • • • • Ideal For Highly Efficient Charger Designs For Single-, Two-, or Three-Cell Li-Ion and Li-Polymer Battery Packs bq24105 Also for LiFePO4 Battery (see Using bq24105 to Charge the LiFePO4 Battery) Integrated Synchronous Fixed-Frequency PWM Controller Operating at 1.1 MHz With 0% to 100% Duty Cycle Integrated Power FETs for Up To 2-A Charge Rate High-Accuracy Voltage and Current Regulation Available in Both Stand-Alone (Built-In Charge Management and Control) and System-Controlled (Under System Command) Versions Status Outputs for LED or Host Processor Interface Indicates Charge-In-Progress, Charge Completion, Fault, and AC-Adapter Present Conditions 20-V Maximum Voltage Rating on IN and OUT Pins High-Side Battery Current Sensing Battery Temperature Monitoring Automatic Sleep Mode for Low Power Consumption System-Controlled Version Can Be Used in NiMH and NiCd Applications Reverse Leakage Protection Prevents Battery Drainage Thermal Shutdown and Protection Built-In Battery Detection Available in 20-Pin, 3.50 mm × 4.50 mm VQFN Package Handheld Products Portable Media Players Industrial and Medical Equipment Portable Equipment 3 Description The bqSWITCHER™ series are highly integrated Liion and Li-polymer switch-mode charge management devices targeted at a wide range of portable applications. The bqSWITCHER™ series offers integrated synchronous PWM controller and power FETs, high-accuracy current and voltage regulation, charge preconditioning, charge status, and charge termination, in a small, thermally enhanced VQFN package. The system-controlled version provides additional inputs for full charge management under system control. The bqSWITCHER™ charges the battery in three phases: conditioning, constant current, and constant voltage. Charge is terminated based on userselectable minimum current level. A programmable charge timer provides a safety backup for charge termination. The bqSWITCHER™ automatically restarts the charge cycle if the battery voltage falls below an internal threshold. The bqSWITCHER™ automatically enters sleep mode when VCC supply is removed. Device Information PART NUMBER bq241xx PACKAGE VQFN (20) (1) BODY SIZE (NOM) 3.50 mm × 4.50 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical 1-Cell Application LOUT BQ24100 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH D1 PGND 17 COUT 0.1W 10 mF Battery Pack Pack+ Pack- MMBZ18VALT1 103AT 2 STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 7.5 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 13 NC 0.1 mF 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Options....................................................... Pin Configuration and Functions ......................... Specifications......................................................... 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 1 1 1 2 4 5 6 Absolute Maximum Ratings ..................................... 6 ESD Ratings.............................................................. 6 Recommended Operating Conditions....................... 7 Thermal Information .................................................. 7 Electrical Characteristics........................................... 7 Dissipation Ratings ................................................. 10 Typical Characteristics ............................................ 10 Detailed Description ............................................ 11 8.1 8.2 8.3 8.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 11 12 13 22 9 Application and Implementation ........................ 24 9.1 Application Information............................................ 24 9.2 Typical Application ................................................. 24 9.3 System Examples ................................................... 28 10 Power Supply Recommendations ..................... 32 11 Layout................................................................... 32 11.1 Layout Guidelines ................................................. 32 11.2 Layout Example .................................................... 34 11.3 Thermal Considerations ........................................ 34 12 Device and Documentation Support ................. 35 12.1 12.2 12.3 12.4 12.5 12.6 12.7 Device Support...................................................... Documentation Support ........................................ Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 35 35 35 35 35 36 36 13 Mechanical, Packaging, and Orderable Information ........................................................... 36 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision O (March 2010) to Revision P • Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .................................................................................................. 1 Changes from Revision M (August 2008) to Revision N Page • Added part number bq24104.................................................................................................................................................. 1 • Added part number bq24104 to the Ordering Information ..................................................................................................... 4 • Deleted Product Preview from bq24104RHLR ....................................................................................................................... 4 • Deleted Product Preview from bq24104RHLT ....................................................................................................................... 4 • Added bq24104 to the Terminal Functions table.................................................................................................................... 5 • Added part number bq24104 to the Deglitch time.................................................................................................................. 8 • Added bq24104 to Table 2. .................................................................................................................................................. 16 • Added part number bq24104 to Figure 16 .......................................................................................................................... 28 Changes from Revision L (December 2007) to Revision M Page • Changed specifications and symbols for (cold, hot, and cutoff) temperature thresholds....................................................... 8 • Changed equation definitions ............................................................................................................................................... 13 • Changed equation definitions ............................................................................................................................................... 27 Changes from Revision K (November 2007) to Revision L Page • Changed Added figure almost identical to Figure 3. Changed RISET2 to 20 kohms. ......................................................... 31 • Added Changed resistor bridge values 301 to 143, 100 to 200 Kohms............................................................................... 31 2 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Changes from Revision J (October 2007) to Revision K Page • Changed From: CIU To: CDY................................................................................................................................................. 4 • Added bq24109 to VOREG ....................................................................................................................................................... 7 • Added part number bq24109 to VLOWV .................................................................................................................................. 8 • Changed Deglitch time for temperature fault, TS, bq24109 typical value From: 1000 To: 500 ............................................. 8 • Changed From: Single-cell or two-cell To: one-, two-, or three-cell applications. Deleted text............................................ 13 Changes from Revision I (August 2007) to Revision J Page • Added part number bq24109 ................................................................................................................................................. 1 • Added part number bq24109 to the Ordering Information ..................................................................................................... 4 • Added bq24109 to the Terminal Functions table.................................................................................................................... 5 • Added part number bq24109 to the Deglitch time.................................................................................................................. 8 • Added bq24109 to Table 2. .................................................................................................................................................. 16 Changes from Revision H (July 2007) to Revision I Page • Added part number bq24103A .............................................................................................................................................. 1 • Changed device size From: 5,5 mm x 3.5 mm To: 4,5 mm x 3.5 mm ................................................................................... 1 • Added part number bq24103A to the Ordering Information ................................................................................................... 4 • Added bq24103A to the Terminal Functions table. ................................................................................................................ 5 • Added part numbers bq24103Ana d bq24113A to VOREG ..................................................................................................... 7 • Added part number bq24103A to VLOWV ................................................................................................................................ 8 • Added part number bq24103A to Figure 16 ........................................................................................................................ 28 Changes from Revision G (June 2007) to Revision H Page • Changed Figure 1 ................................................................................................................................................................ 10 • Changed Figure 2 ................................................................................................................................................................ 10 • Added D1 to diode MMBZ18VALT1 in Figure 13................................................................................................................. 24 • Added D1 to diode MMBZ18VALT1 in Figure 16 ................................................................................................................ 28 • Added D1 to diode MMBZ18VALT1 in Figure 17 ................................................................................................................ 29 • Added D1 to diode MMBZ18VALT1 and Note A to Figure 18. ............................................................................................ 29 Changes from Revision F (January 2007) to Revision G Page • Added bq24113A to the data sheet and the Ordering Information......................................................................................... 4 • Added bq24113A to the Terminal Functions table. ................................................................................................................ 5 • Changed bq24113A added to Figure 18 ............................................................................................................................. 29 Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 3 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 5 Device Options (1) (2) (3) 4 CHARGE REGULATION VOLTAGE (V) INTENDED APPLICATION PART NUMBER (1) (2) (3) 4.2 V Stand-alone bq24100 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone bq24103 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone bq24103A 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) (Blinking status pins) Stand-alone bq24104 Externally programmable (2.1 V to 15.5 V) Stand-alone bq24105 4.2 V (Blinking status pins) Stand-alone 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled bq24113 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled bq24113A Externally programmable (2.1 V to 15.5 V) System-controlled bq24115 bq24108 bq24109 The RHL package is available in the following options: T – taped and reeled in quantities of 250 devices per reel R – taped and reeled in quantities of 3000 devices per reel This product is RoHS-compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for use in specified lead-free soldering processes. TJ = –40°C to 125°C Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 6 Pin Configuration and Functions OUT OUT RHL Package 20-Pin VQFN Top View 1 2 20 19 3 18 4 17 5 16 6 15 7 14 8 13 9 10 STAT2 or NC PGND PGND CE SNS BAT CELLS or FB or NC TS VTSB 11 12 VSS STAT1 IN IN PG VCC TTC or CMODE ISET1 ISET2 bq24100, 03, 03A, 04, 05, 08, 09, 13, 13A, 15 Pin Functions PIN bq24100, bq24108, bq24109 bq24103, bq24103A bq24104 bq24105 bq24113, bq24113A bq24115 BAT 14 14 14 14 14 I Battery voltage sense input. Bypass it with a 0.1 μF capacitor to PGND if there are long inductive leads to battery. CE 16 16 16 16 16 I Charger enable input. This active low input, if set high, suspends charge and places the device in the low-power sleep mode. Do not pull up this input to VTSB. I Available on parts with fixed output voltage. Ground or float for single-cell operation (4.2 V). For two-cell operation (8.4 V) pull up this pin with a resistor to VCC. 7 I Charge mode selection: low for precharge as set by ISET2 pin and high (pull up to VTSB or VCC(min), PWM switching I(VCC) I(SLP) VCC supply current Battery discharge sleep current, (SNS, BAT, OUT, FB pins) 10 VCC > VCC(min), PWM NOT switching 5 VCC > VCC(min), CE = HIGH 315 0°C ≤ TJ ≤ 65°C, VI(BAT) = 4.2 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 3.5 0°C ≤ TJ ≤ 65°C, VI(BAT) = 8.4 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 5.5 0°C ≤ TJ ≤ 65°C, VI(BAT) = 12.6 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 7.7 mA μA μA VOLTAGE REGULATION VOREG VIBAT CELLS = Low, in voltage regulation 4.2 CELLS = High, in voltage regulation 8.4 Output voltage, bq24100/08/09 Operating in voltage regulation 4.2 Feedback regulation REF for bq24105/15 only (W/FB) IIBAT = 25 nA typical into pin 2.1 Output voltage, bq24103/03A/04/13/13A Voltage regulation accuracy TA = 25°C V V –0.5% 0.5% –1% 1% 150 2000 –10% 10% CURRENT REGULATION - FAST CHARGE IOCHARGE Output current range of converter VLOWV ≤ VI(BAT) < VOREG, V(VCC) - VI(BAT) > V(DO-MAX) mA 100 mV ≤ VIREG≤ 200 mV, V VIREG Voltage regulated across R(SNS) Accuracy V(ISET1) Output current set voltage Copyright © 2004–2015, Texas Instruments Incorporated IREG + 1V RSET1 1000, Programmed Where 5 kΩ ≤ RSET1 ≤ 10 kΩ, Select RSET1 to program VIREG, VIREG(measured) = IOCHARGE + RSNS (–10% to 10% excludes errors due to RSET1 and R(SNS) tolerances) V(LOWV) ≤ VI(BAT) ≤ VO(REG), V(VCC) ≤ VI(BAT) × V(DO-MAX) 1 Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 V 7 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER K(ISET1) Output current set factor TEST CONDITIONS MIN VLOWV ≤ VI(BAT) < VO(REG) , V(VCC) ≤ VI(BAT) + V(DO-MAX) TYP MAX 1000 UNIT V/A PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION VLOWV Precharge to fast-charge transition voltage threshold, BAT, bq24100/03/03A/04/05/08/09 ICs only t Deglitch time for precharge to fast charge transition, IOPRECHG V(ISET2) K(ISET2) Precharge current set factor 68 71.4 75 %VO(REG) Rising voltage; tRISE, tFALL = 100 ns, 2-mV overdrive 20 30 40 ms Precharge range VI(BAT) < VLOWV, t < tPRECHG 15 200 mA Precharge set voltage, ISET2 VI(BAT) < VLOWV, t < tPRECHG 100 mV 1000 V/A 100 mV ≤ VIREG-PRE ≤ 100 mV, V VIREG-PRE Voltage regulated across RSNS-Accuracy IREG*PRE + 0.1V RSET2 1000, (PGM) Where 1.2 kΩ ≤ RSET2 ≤ 10 kΩ, Select RSET1 to program VIREG-PRE, VIREG-PRE (Measured) = IOPRE-CHG × RSNS (–20% to 20% excludes errors due to RSET1 and RSNS tolerances) –20% 20% 15 200 CHARGE TERMINATION (CURRENT TAPER) DETECTION ITERM Charge current termination detection range VI(BAT) > VRCH VTERM Charge termination detection set voltage, ISET2 VI(BAT) > VRCH K(ISET2) Termination current set factor tdg-TERM 100 mV 1000 Charger termination accuracy VI(BAT) > VRCH Deglitch time for charge termination Both rising and falling, 2-mV overdrive tRISE, tFALL = 100 ns –20% mA V/A 20% 20 30 40 ms TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR %LTF Cold temperature threshold, TS, % of bias VLTF = VO(VTSB) × % LTF/100 72.8% 73.5% 74.2% %HTF Hot temperature threshold, TS, % of bias VHTF = VO(VTSB) × % HTF/100 33.7% 34.4% 35.1% %TCO Cutoff temperature threshold, TS, % of bias VTCO = VO(VTSB) × % TCO/100 28.7% 29.3% 29.9% 0.5% 1% 1.5% 20 30 40 LTF hysteresis Deglitch time for temperature fault, TS Both rising and falling, 2-mV overdrive tRISE, tFALL = 100 ns tdg-TS Deglitch time for temperature fault, TS, bq24109, bq24104 VO(VTSB) TS bias output voltage VCC > VIN(min), I(VTSB) = 10 mA 0.1 μF ≤ CO(VTSB) ≤ 1 μF VO(VTSB) TS bias voltage regulation accuracy VCC > IN(min), I(VTSB) = 10 mA 0.1 μF ≤ CO(VTSB) ≤ 1 μF ms 500 3.15 –10% V 10% BATTERY RECHARGE THRESHOLD VRCH tdg-RCH Recharge threshold voltage Below VOREG 75 100 125 mV/cell Deglitch time VI(BAT) < decreasing below threshold, tFALL = 100 ns 10-mV overdrive 20 30 40 ms STAT1, STAT2, AND PG OUTPUTS VOL(STATx) Low-level output saturation voltage, STATx IO = 5 mA 0.5 VOL(PG) Low-level output saturation voltage, PG IO = 10 mA 0.1 V CE CMODE, CELLS INPUTS VIL Low-level input voltage IIL = 5 μA VIH High-level input voltage IIH = 20 μA 0 0.4 1.3 VCC V TTC INPUT tPRECHG Precharge timer tCHARGE Programmable charge timer range t(CHG) = C(TTC) × K(TTC) Charge timer accuracy 0.01 μF ≤ C(TTC) ≤ 0.18 μF 8 Submit Documentation Feedback 1440 2160 s 25 1800 572 minutes -10% 10% Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER KTTC Timer multiplier CTTC Charge time capacitor range VTTC_EN TTC enable threshold voltage TEST CONDITIONS MIN TYP MAX 2.6 0.01 V(TTC) rising UNIT min/nF μF 0.22 200 mV SLEEP COMPARATOR VSLP-ENT Sleep-mode entry threshold VSLP-EXIT Sleep-mode exit hysteresis, tdg-SLP Deglitch time for sleep mode 2.3 V ≤ VI(OUT) ≤ VOREG, for 1 or 2 cells VCC ≤ VIBAT +5 mV VCC ≤ VIBAT +75 mV VI(OUT) = 12.6 V, RIN = 1 kΩ bq24105/15 (1) VCC ≤ VIBAT -4 mV VCC ≤ VIBAT +73 mV 40 160 2.3 V ≤ VI(OUT)≤ VOREG VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, PMOS turns off VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, STATx pins turn off V mV μs 5 20 30 40 3.50 ms UVLO VUVLO-ON IC active threshold voltage VCC rising 3.15 3.30 IC active hysteresis VCC falling 120 150 V mV PWM Internal P-channel MOSFET on-resistance Internal N-channel MOSFET on-resistance fOSC 7 V ≤ VCC ≤ VCC(max) 400 4.5 V ≤ VCC ≤ 7 V 500 7 V ≤ VCC ≤ VCC(max) 130 4.5 V ≤ VCC ≤ 7 V mΩ 150 Oscillator frequency 1.1 Frequency accuracy –9% MHz 9% DMAX Maximum duty cycle DMIN Minimum duty cycle 100% tTOD Switching delay time (turn on) 20 ns tsyncmin Minimum synchronous FET on time 60 ns 0% Synchronous FET minimum current-off threshold (2) 50 400 mA BATTERY DETECTION IDETECT Battery detection current during time-out fault VI(BAT) < VOREG – VRCH IDISCHRG1 Discharge current tDISCHRG1 Discharge time IWAKE Wake current tWAKE Wake time IDISCHRG2 Termination discharge current tDISCHRG2 Termination time 2 mA VSHORT < VI(BAT) < VOREG – VRCH 400 μA VSHORT < VI(BAT) < VOREG – VRCH 1 s VSHORT < VI(BAT) < VOREG – VRCH 2 mA VSHORT < VI(BAT) < VOREG – VRCH 0.5 s Begins after termination detected, VI(BAT) ≤ VOREG 400 μA 262 ms OUTPUT CAPACITOR COUT Required output ceramic capacitor range from SNS to PGND, between inductor and RSNS CSNS Required SNS capacitor (ceramic) at SNS pin 4.7 10 μF 47 μF 0.1 PROTECTION VOVP OVP threshold voltage ILIMIT Cycle-by-cycle current limit VSHORT Short-circuit voltage threshold, BAT (1) (2) Threshold over VOREG to turn off P-channel MOSFET, STAT1, and STAT2 during charge or termination states 110 117 2.6 3.6 4.5 A VI(BAT) falling 1.95 2 2.05 V/cell 121 %VO(REG) For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry. N-channel always turns on for approximately 60 ns and then turns off if current is too low. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 9 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER ISHORT Short-circuit current TSHTDWN Thermal trip TEST CONDITIONS MIN VI(BAT) ≤ VSHORT TYP MAX 35 UNIT 65 Thermal hysteresis mA 165 °C 10 °C 7.6 Dissipation Ratings θJA θJC TA < 40°C POWER RATING DERATING FACTOR ABOVE TA = 40°C 46.87°C/W 2.5°C/W 1.81 W 0.021 W/°C PACKAGE RHL (1) (1) This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This is connected to the ground plane by a 2x3 via matrix. 7.7 Typical Characteristics 100 100 VI = 9 V 90 90 VI = 5 V Efficiency - % Efficiency - % VI = 16 V 80 VI = 16 V 70 V(BAT) = 4.2 V 1-Cell 60 70 V(BAT) = 8.4 V 2-Cell 60 50 50 0 0.5 1 1.5 I(BAT) - Charge Current - A Figure 1. Efficiency vs Charge Current 10 80 Submit Documentation Feedback 2 0 0.5 1 1.5 2 I(BAT) - Charge Current - A Figure 2. Efficiency vs Charge Current Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 8 Detailed Description 8.1 Overview The bqSWITCHER™ supports a precision Li-ion or Li-polymer charging system for single cell or two cell applications. The device has a battery detect scheme that allows it to automatically detect the presence and absence of a battery. When the battery is detected, charging begins in one of three phases (depending upon battery voltage): precharge, constant current (fast-charge current regulation), and constant voltage (fast-charge voltage regulation). The device will terminate charging when the termination current threshold has been reached and will begin a recharge cycle when the battery voltage has dropped below the recharge threshold (VRCG). Precharge, constant current, and termination current can be configured through the ISET1 and ISET2 pins, allowing for flexibility in battery charging profile. During charging, the integrated fault monitors of the device, such as battery short detection (VSHORT), thermal shutdown (internal TSHTDWN and TS pin), and safety timer expiration (TTC pin), ensure battery safety. bqSWITCHER™ has three status pins (STAT1, STAT2, and PG) to indicate the charging status and input voltage (AC adapter) status. These pins can be used to drive LEDs or communicate with a host processor. Precharge Phase Voltage Regulation and Charge Termination Phase Current Regulation Phase Regulation Voltage Regulation Current Charge Voltage VLOW VSHORT Charge Current Precharge and Termination ISHORT UDG-04037 Programmable Safety Timer Precharge Timer Figure 3. Typical Charging Profile Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 11 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 8.2 Functional Block Diagram Protection PMOS FET is OFF when not charging or in SLEEP to prevent discharge of battery when IN < BAT Rsns IN OUT VIN Sense FET IN Poff VCC PG CHARGE SLEEP 10 Synch V(150 mA) VCC-6V PGND VCC Sense FET Vuvlo UVLO/POR POR Icntrl 6V VTSB VTSB Co 10 F Temp VCC TG VCC-6V V(3.6A) 2.1V + Pack- PGND VCC PkILim Voltage Reference Pack+ H OUT Isynch BG TG Lo I VCC/10 RAMP (Vpp=VCC/10) Gate Drive to FB FB SPIN ONLY BG SYNCH VCC-6V MOD OSC Q S MOD Q R VCC OVP RAMP PkILim or OVP TIMEOUT FAULT SUSPEND TERM UVLO/POR SNS VCC + - Ibat Reg + - ∗ TIMEOUT COMPENSATION 1k PG SUSPEND SLEEP + - VCC + CLAMP BAT VCC VCC UVLO/ POR 1V 50 mV VTSB CE CE BAT Vbat Reg + 2.1V Vrch CONTROL LOGIC (STATE MACHINE) 20uA 20uA Term_Det SNS+ VCC LowV TERM SLEEP SUSPEND FB 1C 1V VSHORT DISCHARGE Wake PkILim CELLS (bq24103/04/13) FB (bq24105/15) N/C (bq24100) VTSB 2C Vreg + - ISET1 FASTCHG Disable WAKE VCC FB SPIN BAT BAT_PRS_ disch CHARGE VCC BAT Charge RSET1 PRE-CHARGE STAT1 SYNCH Charge STAT2 0.1V Discharge SLEEP SNS + 1k - Vovp OVP BAT OVP 2.1V TERM VCC 0.25V Vrch 30ms Dgltch DSABL_TERM 1V TTC TIMER CLK Term & Timer Disable 0.75V TIMER FF CHAIN 0.5V PRE-CHG TIMEOUT VSS bqSWITCHER RESET FAST CHG TIMEOUT LowV 30ms Dgltch BAT_PRS_dischg VSHORT BAT + - ISET2 PRE-CHG Disable RSET2 + - FASTCHG Disable VTSB 0.1V 30ms dgltch Term_Det VTSB TS LTF SUSPEND TS SPIN TEMP SUSPEND HTF TCO bq2410x ∗Patent Pending #36889 12 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 8.3 Feature Description 8.3.1 PWM Controller The bq241xx provides an integrated fixed 1-MHz frequency voltage-mode controller with Feed-Forward function to regulate charge current or voltage. This type of controller is used to help improve line transient response, thereby simplifying the compensation network used for both continuous and discontinuous current conduction operation. The voltage and current loops are internally compensated using a Type-III compensation scheme that provides enough phase boost for stable operation, allowing the use of small ceramic capacitors with very low ESR. There is a 0.5 V offset on the bottom of the PWM ramp to allow the device to operate between 0% to 100% duty cycle. The internal PWM gate drive can directly control the internal PMOS and NMOS power MOSFETs. The high-side gate voltage swings from VCC (when off), to VCC-6 (when on and VCC is greater than 6 V) to help reduce the conduction losses of the converter by enhancing the gate an extra volt beyond the standard 5 V. The low-side gate voltage swings from 6 V, to turn on the NMOS, down to PGND to turn it off. The bq241xx has two back to back common-drain P-MOSFETs on the high side. An input P-MOSFET prevents battery discharge when IN is lower than BAT. The second P-MOSFET behaves as the switching control FET, eliminating the need of a bootstrap capacitor. Cycle-by-cycle current limit is sensed through the internal high-side sense FET. The threshold is set to a nominal 3.6 A peak current. The low-side FET also has a current limit that decides if the PWM Controller will operate in synchronous or non-synchronous mode. This threshold is set to 100 mA and it turns off the low-side NMOS before the current reverses, preventing the battery from discharging. Synchronous operation is used when the current of the low-side FET is greater than 100 mA to minimize power losses. 8.3.2 Temperature Qualification The bqSWITCHER™ continuously monitors battery temperature by measuring the voltage between the TS pin and VSS pin. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop this voltage. The bqSWITCHER™ compares this voltage against its internal thresholds to determine if charging is allowed. To initiate a charge cycle, the battery temperature must be within the V(LTF)-to-V(HTF) thresholds. If battery temperature is outside of this range, the bqSWITCHER™ suspends charge and waits until the battery temperature is within the V(LTF)-to-V(HTF) range. During the charge cycle (both precharge and fast charge), the battery temperature must be within the V(LTF)-to-V(TCO) thresholds. If battery temperature is outside of this range, the bqSWITCHER™ suspends charge and waits until the battery temperature is within the V(LTF)-toV(HTF) range. The bqSWITCHER™ suspends charge by turning off the PWM and holding the timer value (that is, timers are not reset during a suspend condition). Note that the bias for the external resistor divider is provided from the VTSB output. Applying a constant voltage between the V(LTF)-to-V(HTF) thresholds to the TS pin disables the temperature-sensing feature. VO(VTSB) ´ RTHCOLD ´ RTHHOT ´ 1 - 1 VLTF VHTF RT2 = RTHHOT ´ ( VO(VTSB) -1 VHTF VO(VTSB) -1 VLTF RT1 = 1 + 1 RT2 RTHCOLD ) - RTHCOLD ´ ( VO(VTSB) -1 VLTF ) Where: VLTF = VO(VTSB) ´ % LTF¸100 / 100 VHTF = VO(VTSB) ´ % HTF¸100 / 100 Copyright © 2004–2015, Texas Instruments Incorporated (1) Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 13 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Feature Description (continued) VCC Charge Suspend Charge Suspend V(LTF) Temperature Range to Initiate Charge V(HTF) V(TCO) Charge Suspend Temperature Range During Charge Cycle Charge Suspend VSS Figure 4. TS Pin Thresholds 8.3.3 Battery Preconditioning (Precharge) On power up, if the battery voltage is below the VLOWV threshold, the bqSWITCHER™ applies a precharge current, IPRECHG, to the battery. This feature revives deeply discharged cells. The bqSWITCHER™ activates a safety timer, tPRECHG, during the conditioning phase. If the VLOWV threshold is not reached within the timer period, the bqSWITCHER™ turns off the charger and enunciates FAULT on the STATx pins. In the case of a FAULT condition, the bqSWITCHER™ reduces the current to IDETECT. IDETECT is used to detect a battery replacement condition. Fault condition is cleared by POR or battery replacement. The magnitude of the precharge current, IO(PRECHG), is determined by the value of programming resistor, R(ISET2), connected to the ISET2 pin. K (ISET2) V (ISET2) I O(PRECHG) + R(ISET2) R(SNS) ǒ Ǔ where • • • • RSNS is the external current-sense resistor V(ISET2) is the output voltage of the ISET2 pin K(ISET2) is the V/A gain factor V(ISET2) and K(ISET2) are specified in the Electrical Characteristics table. (2) 8.3.4 Battery Charge Current The battery charge current, IO(CHARGE), is established by setting the external sense resistor, R(SNS), and the resistor, R(ISET1), connected to the ISET1 pin. In order to set the current, first choose R(SNS) based on the regulation threshold VIREG across this resistor. The best accuracy is achieved when the VIREG is between 100mV and 200mV. V IREG R (SNS) + I OCHARGE (3) If the results is not a standard sense resistor value, choose the next larger value. Using the selected standard value, solve for VIREG. Once the sense resistor is selected, the ISET1 resistor can be calculated using the following equation: 14 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Feature Description (continued) R ISET1 + K ISET1 RSNS V ISET1 I CHARGE (4) 8.3.5 Battery Voltage Regulation The voltage regulation feedback occurs through the BAT pin. This input is tied directly to the positive side of the battery pack. The bqSWITCHER™ monitors the battery-pack voltage between the BAT and VSS pins. The bqSWITCHER™ is offered in a fixed single-cell voltage version (4.2 V) and as a one-cell or two-cell version selected by the CELLS input. A low or floating input on the CELLS selects single-cell mode (4.2 V) while a highinput through a resistor selects two-cell mode (8.4 V). For the bq24105 and bq24115, the output regulation voltage is specified as: (R1 + R2) VOREG = x VIBAT R2 (5) where R1 and R2 are resistor divider from BAT to FB and FB to VSS, respectively. The bq24105 and bq24115 recharge threshold voltage is specified as: (R1 + R2) VRCH = x 50 mV R2 (6) 8.3.6 Charge Termination and Recharge The bqSWITCHER™ monitors the charging current during the voltage regulation phase. Once the termination threshold, ITERM, is detected, the bqSWITCHER™ terminates charge. The termination current level is selected by the value of programming resistor, R(ISET2), connected to the ISET2 pin. K (ISET2) V TERM I TERM + R(ISET2) R(SNS) ǒ Ǔ where • • • • R(SNS) is the external current-sense resistor VTERM is the output of the ISET2 pin K(ISET2) is the A/V gain factor VTERM and K(ISET2) are specified in the Electrical Characteristics table (7) As a safety backup, the bqSWITCHER™ also provides a programmable charge timer. The charge time is programmed by the value of a capacitor connected between the TTC pin and GND by the following formula: t CHARGE + C(TTC) K(TTC) where • • A • • • • C(TTC) is the capacitor connected to the TTC pin K(TTC) is the multiplier (8) new charge cycle is initiated when one of the following conditions is detected: The battery voltage falls below the VRCH threshold. Power-on reset (POR), if battery voltage is below the VRCH threshold CE toggle TTC pin, described as follows. To disable the charge termination and safety timer, the user can pull the TTC input below the VTTC_EN threshold. Going above this threshold enables the termination and safety timer features and also resets the timer. Tying TTC high disables the safety timer only. 8.3.7 Sleep Mode The bqSWITCHER™ enters the low-power sleep mode if the VCC pin is removed from the circuit. This feature prevents draining the battery during the absence of VCC. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 15 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Feature Description (continued) 8.3.8 Charge Status Outputs The open-drain STAT1 and STAT2 outputs indicate various charger operations as shown in Table 1. These status pins can be used to drive LEDs or communicate to the host processor. Note that OFF indicates that the open-drain transistor is turned off. Table 1. Status Pins Summary Charge State STAT1 STAT2 Charge-in-progress ON OFF Charge complete OFF ON Charge suspend, timer fault, overvoltage, sleep mode, battery absent OFF OFF Table 2. Status Pins Summary (bq24104, bq24108 and bq24109 Only) STAT1 STAT2 Battery absent Charge State OFF OFF Charge-in-progress ON OFF Charge complete OFF ON Battery over discharge, VI(BAT) < V(SC) ON/OFF (0.5 Hz) OFF Charge suspend (due to TS pin and internal thermal protection) ON/OFF (0.5 Hz) OFF Precharge timer fault ON/OFF (0.5 Hz) OFF Fast charge timer fault ON/OFF (0.5 Hz) OFF OFF OFF Sleep mode 8.3.9 PG Output The open-drain PG (power good) indicates when the AC-to-DC adapter (that is, VCC) is present. The output turns on when sleep-mode exit threshold, VSLP-EXIT, is detected. This output is turned off in the sleep mode. The PG pin can be used to drive an LED or communicate to the host processor. 8.3.10 CE Input (Charge Enable) The CE digital input is used to disable or enable the charge process. A low-level signal on this pin enables the charge and a high-level VCC signal disables the charge. A high-to-low transition on this pin also resets all timers and fault conditions. Note that the CE pin cannot be pulled up to VTSB voltage. This may create power-up issues. 8.3.11 Timer Fault Recovery As shown in Figure 4, bqSWITCHER™ provides a recovery method to deal with timer fault conditions. The following summarizes this method. Condition 1 VI(BAT) above recharge threshold (VOREG - VRCH) and timeout fault occurs. Recovery method: bqSWITCHER™ waits for the battery voltage to fall below the recharge threshold. This could happen as a result of a load on the battery, self-discharge or battery removal. Once the battery falls below the recharge threshold, the bqSWITCHER™ clears the fault and enters the battery absent detection routine. A POR or CE toggle also clears the fault. Condition 2 Charge voltage below recharge threshold (VOREG – VRCH) and timeout fault occurs Recovery method: In this scenario, the bqSWITCHER™ applies the IDETECT current. This small current is used to detect a battery removal condition and remains on as long as the battery voltage stays below the recharge threshold. If the battery voltage goes above the recharge threshold, then the bqSWITCHER™ disables the IDETECT current and executes the recovery method described in Condition 1. Once the battery falls below the recharge threshold, the bqSWITCHER™ clears the fault and enters the battery absent detection routine. A POR or CE toggle also clears the fault. 16 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 8.3.12 Output Overvoltage Protection (Applies to All Versions) The bqSWITCHER™ provides a built-in overvoltage protection to protect the device and other components against damages if the battery voltage gets too high, as when the battery is suddenly removed. When an overvoltage condition is detected, this feature turns off the PWM and STATx pins. The fault is cleared once VIBAT drops to the recharge threshold (VOREG – VRCH). 8.3.13 Functional Description For System-Controlled Version (bq2411x) For applications requiring charge management under the host system control, the bqSWITCHER™ (bq2411x) offers a number of control functions. The following section describes these functions. 8.3.14 Precharge and Fast-Charge Control A low-level signal on the CMODE pin forces the bqSWITCHER™ to charge at the precharge rate set on the ISET2 pin. A high-level signal forces charge at fast-charge rate as set by the ISET1 pin. If the battery reaches the voltage regulation level, VOREG, the bqSWITCHER™ transitions to voltage regulation phase regardless of the status of the CMODE input. 8.3.15 Charge Termination and Safety Timers The charge timers and termination are disabled in the system-controlled versions of the bqSWITCHER™. The host system can use the CE input to enable or disable charge. When an overvoltage condition is detected, the charger process stops, and all power FETs are turned off. 8.3.16 Battery Detection For applications with removable battery packs, bqSWITCHER™ provides a battery absent detection scheme to reliably detect insertion and/or removal of battery packs. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 17 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com POR or VRCH Detection routine runs on power up and if VBAT drops below refresh threshold due to removing battery or discharging battery. Yes Enable I(DETECT) for t(DETECT) VI(BAT) VO(REG) -VRCH Yes BATTERY ABSENT Figure 5. Battery Absent Detection for bq2410x ICs only The voltage at the BAT pin is held above the battery recharge threshold, VOREG – VRCH, by the charged battery following fast charging. When the voltage at the BAT pin falls to the recharge threshold, either by a load on the battery or due to battery removal, the bqSWITCHER™ begins a battery absent detection test. This test involves enabling a detection current, IDISCHARGE1, for a period of tDISCHARGE1 and checking to see if the battery voltage is below the short circuit threshold, VSHORT. Following this, the wake current, IWAKE is applied for a period of tWAKE and the battery voltage is checked again to ensure that it is above the recharge threshold. The purpose of this current is to attempt to close an open battery pack protector, if one is connected to the bqSWITCHER™. Passing both of the discharge and charge tests indicates a battery absent fault at the STAT pins. Failure of either test starts a new charge cycle. For the absent battery condition, typically the voltage on the BAT pin rises and falls between 0V and VOVPthresholds indefinitely. 18 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 VBAT Battery Connected VOREG No Battery Detected 2V/cell No Battery Detected Yes Battery Detected IWAKE IBAT - IDISCHRG1 t DISCHRG1 tWAKE t DISCHRG1 Figure 6. Battery Detect Timing Diagram 8.3.16.1 Battery Detection Example In order to detect a no battery condition during the discharge and wake tests, the maximum output capacitance should not exceed the following: a. Discharge (IDISCHRG1 = 400 μA, tDISCHRG1 = 1s, VSHORT = 2V) I ´t CMAX _ DIS = DISCHRG1 DISCHRG1 VOREG - VSHORT CMAX _ DIS = 400 mA ´ 1 s 4.2 V - 2 V CMAX _ DIS = 182 mF (9) b. Wake (IWAKE = 2 mA, tWAKE = 0.5 s, VOREG – VRCH = 4.1V) IWAKE ´ t WAKE CMAX _ WAKE = (VOREG - VRCH ) - 0 V CMAX _ WAKE = 2 mA ´ 0.5 s (4.2 V - 0.1 V ) - 0 V CMAX _ WAKE = 244 mF (10) Based on these calculations the recommended maximum output capacitance to ensure proper operation of the battery detection scheme is 100 μF which will allow for process and temperature variations. Figure 7 shows the battery detection scheme when a battery is inserted. Channel 3 is the output signal and Channel 4 is the output current. The output signal switches between VOREG and GND until a battery is inserted. Once the battery is detected, the output current increases from 0 A to 1.3 A, which is the programmed charge current for this application. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 19 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Figure 7. Battery Detection Waveform When a Battery is Inserted Figure 8 shows the battery detection scheme when a battery is removed. Channel 3 is the output signal and Channel 4 is the output current. When the battery is removed, the output signal goes up due to the stored energy in the inductor and it crosses the VOREG – VRCH threshold. At this point the output current goes to 0 A and the IC terminates the charge process and turns on the IDISCHG2 for tDISCHG2. This causes the output voltage to fall down below the VOREG – VRCHG threshold triggering a Battery Absent condition and starting the battery detection scheme. Figure 8. Battery Detection Waveform When a Battery is Removed 8.3.17 Current Sense Amplifier BQ241xx family offers a current sense amplifier feature that translates the charge current into a DC voltage. Figure 9 is a block diagram of this feature. 20 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 OUT ICHARGE SNS RSNS + KISET2 BAT + - + FASTCHG Disable ISET2 RISET2 Figure 9. Current Sense Amplifier The voltage on the ISET2 pin can be used to calculate the charge current. Equation 11 shows the relationship between the ISET2 voltage and the charge current: VISET2 K(ISET2) I CHARGE + R SNS R ISET2 (11) This feature can be used to monitor the charge current (see Figure 10) during the current regulation phase (Fastcharge only) and the voltage regulation phase. The schematic for the application circuit for this waveform is shown in Figure 13. CH3 = Inductor Current CH3 500 mA/div CH1 = ISET2 CH3 0A CH1 200 mV/div CH2 = OUT CH1 0V CH2 16 V CH2 10 V/div t = Time = 200 ms/div Figure 10. Current Sense Amplifier Charge Current Waveform Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 21 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 8.4 Device Functional Modes Figure 11 shows the operational flow chart for a stand-alone charge operation. POR Check for Battery Presence Battery Detect? No Indicate BATTERY ABSENT Yes Suspend Charge TS Pin in LTF to HTF Range? No Indicate CHARGE SUSPEND Yes VBAT