bq24180
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SLUSA02 A – FEBRUARY 2010 – REVISED FEBRUARY 2010
Fully Integrated Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and
Accessory Power Connection
Check for Samples: bq24180
FEATURES
•
1
•
2
•
•
•
•
•
•
•
Charge Faster than Linear Chargers From
Current Limited Input Sources
High-Accuracy Voltage and Current Regulation
– Input Current Regulation Accuracy: ±5%
(100mA, 500mA)
– Charge Voltage Regulation Accuracy:
±0.5% (25°C), ±1% (0–125°C)
– Charge Current Regulation Accuracy: ±5%
Accessory Power Output (DCOUT)
Input Voltage Based Dynamic Power
Management
Safety Limit Register for Maximum Charge
Voltage and Current Limiting
High-Efficiency Mini-USB/AC Battery Charger
for Single-Cell Li-Ion and Li-Polymer Battery
Packs
20-V Absolute Maximum and 16.5V Operation
Input Voltage Rating
Built-in Input Current Sensing and Limiting
•
•
•
•
•
•
•
Integrated Power FETs for Up to 1.5-A Charge
Rate
Programmable Charge Parameters through
I2C™ compatible Interface (up to 3.4 Mbps)
Synchronous Fixed-Frequency PWM
Controller Operating at 3 MHz With 0% to
99.5% Duty Cycle
Safety Timer and Software Watchdog
Reverse Leakage Protection Prevents Battery
Drainage
Thermal Regulation and Protection
Status Outputs for Charging and Faults
25-Pin WCSP Package
APPLICATIONS
•
•
•
Mobile Phones and Smart Phones
Portable Media Players
Handheld Devices
DESCRIPTION
The bq24180 is a compact, flexible, high-efficiency, USB-friendly switch-mode charge management device for
single-cell Li-ion and Li-polymer batteries used in a wide range of portable applications. The charge parameters
is programmable using an I2C compatible interface. The bq24180 integrates a synchronous PWM controller,
power MOSFETs, input current sensing and overvoltage protection, high-accuracy current and voltage regulation,
and charge termination, into a small WCSP package.
POWER FOR
ACCESSORY
C8
1 µF
SYSTEM
VBUS
C1
1 µF
RSNS
68 mW
DCOUT
VBUS
SW
C4
10 nF
PMID
C3
4.7 µF
C2
10 µF
BOOT
TEMP
PACK +
PGND
HOST
bq24180
CSIN
PACK -
CSOUT
DRV
C7
1 µF
VBUS
D+
D-
VBUS
C5
0.1 µF
PSEL
TS
USB PHY
GND
C6
1 µF
VAUX
R1
10 kW
R2
10 kW
R4
10 kW
CD
INT
Hardware Disable
STAT
SCL
SDA
R3
4 kW
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
I2C is a trademark of Phillips Electronics.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
bq24180
SLUSA02 A – FEBRUARY 2010 – REVISED FEBRUARY 2010
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DESCRIPTION (CONTINUED)
The bq24180 charges the battery in three phases: conditioning, constant current and constant voltage. Charge
current is programmable using the I2C interface. Additionally, the input current can be limited to a host
programmable threshold to maintain maximum charge current from current-limited sources, such as USB ports.
Charge is terminated based on user-selectable minimum current level. A software watchdog provides a safety
backup for I2C interface while a safety timer prevents overcharging the battery. During normal operation,
bq24180 automatically restarts the charge cycle if the battery voltage falls below an internal threshold and
automatically enters sleep mode or high impedance mode when the input supply is removed. The charge status
is reported to the host using the I2C interface. During the charging process, the bq24180 monitors its junction
temperature (TJ) and reduces the charge current if TJ increases to 125°C. The bq24180 is available in 25-pin
WCSP package.
ORDERING INFORMATION
VOVP
I2C ADDRESS
bq24180YFFR
16.5 V
6B
bq24180YFFT
16.5 V
6B
PART NUMBER
(1)
(2)
(1) (2)
The YFF package is available in the following options:
R – taped and reeled in quantities of 3,000 devices per reel.
T – taped and reeled in quantities of 250 devices per reel.
This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for
use in specified lead-free soldering processes. In addition, this product uses package materials that do not contain halogens, including
bromine (Br) or antimony (Sb) above 0.1% of total product weight.
ABSOLUTE MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
LIMITS
UNIT
Supply voltage range (with respect to PGND)
VBUS
–2 to 20
V
Input voltage range (with respect to and PGND)
SCL, SDA, PSEL, CSIN, CSOUT, DRV, DCOUT, INT
–0.3 to 7
V
PMID, STAT
–0.3 to 20
SW, BOOT
–0.7 to 20
Output voltage range (with respect to and PGND)
Voltage difference between CSIN and CSOUT inputs (VCSIN –VCSOUT)
Voltage difference between BOOT and SW inputs (VBOOT –VSW)
Output sink
Output current
Output current (average)
V
±7
V
–0.3 to 7
V
INT
5
STAT
10
DCOUT
1.5
A
DRV
10
mA
2
A
TA
Operating free-air temperature range
–30 to +85
°C
TJ
Junction temperature range
–40 to +125
°C
Tstg
Storage temperature
–45 to +150
°C
(1)
(2)
2
SW
mA
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging
Section of the data book for thermal limitations and considerations of packages.
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DISSIPATION RATINGS
(1)
PACKAGE
RqJA
RqJC
TA < 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
WCSP-25
60°C/W (1)
1.57°C/W
540 mW
5.4 mW/°C
Using JEDEC 2s2p PCB standard.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage, VBUS
MAX
4.0
Operating junction temperature range, TJ
(1)
NOM
16
0
UNIT
(1)
V
125
°C
The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW pins. A tight
layout minimizes switching noise.
ELECTRICAL CHARACTERISTICS
Circuit of Figure 2, VVBUS = 5V, HZ_MODE=0, CD=0, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
VVBUS > VVBUS(min), PWM switching
10
mA
IVBUS
VVBUS supply current for control
VVBUS > VVBUS(min), PWM NOT switching
5
mA
0°C< TJ < 85°C, EN=0 or HZ_MODE=1
650
µA
IVBUS_LEAK
Leakage current from battery to VBUS pin
0°C< TJ < 85°C, VCSOUT = 4.2 V, No input connected
5
µA
IBAT_DCOUT
Battery Current when using DCOUT
DCOUT = enabled, VBAT = 4.2V, DCOUT_ILIM=1A,
IDCOUT=750mA
800
µA
0°C< TJ < 85°C, VCSOUT = 4.2 V, No Input connected,
DCOUT disabled SCL,SDA=0V or 1.8V
30
µA
IBAT_HIZ
Battery discharge current in High Impedance
mode, (CSIN, CSOUT, SW pins)
0°C< TJ < 85°C, VCSOUT = 4.2 V, High Impedance
mode, DCOUT disabled, VVBUS = 5V,
SCL,SDA=0V or 1.8V
60
µA
V
VOLTAGE REGULATION
VOREG
Output charge voltage programmable range
Voltage regulation accuracy
Operating in voltage regulation, programmable
3.5
4.44
–0.5%
0.5%
–1%
1%
550
1550
VICHRG = 37.4 mV to 44.2 mV
–3.5%
3.5%
VICHRG > 44.2 mV
–3.0%
3.0%
TA = 25°C
CURRENT REGULATION - FAST CHARGE
IOCHARGE
Output charge current programmable range
Regulation accuracy for charge current
across RSNS
VIREG = IOCHARGE × RSNS
VPRECHG ≤ VCSOUT < VOREG, VVBUS>VSLP,
RSNS = 68 mΩ, Programmable
mA
PSEL, CD LOGIC LEVEL
VIL
Input low threshold level
PSEL, CD falling
VIH
Input high threshold level
PSEL, CD rising
1.2
0.4
25
V
V
CHARGE TERMINATION DETECTION
ITERM
Termination charge current
VCSOUT > VOREG–VRCH , VVBUS>VSLP,
RSNS = 68 MΩ, Programmable
ITERM_dgl
Deglitch time for charge termination
Both rising and falling, 2-mV over- drive,
tRISE, tFALL = 100 ns
Regulation accuracy for termination current
across RSNS
VIREG_TERM = IOTERM × RSNS
200
30
ms
VTERM = 1.7 mV
–40%
40%
VTERM = 3.4 mV to 6.8 mV
–16%
16%
VTERM = 6.8 mV to 13.6 mV
–11%
11%
VTERM ≥ 13.6 mV
–5.5%
5.5%
Battery Detection sink current before charge
done
mA
–550
µA
INPUT BASED DYNAMIC POWER MANAGEMENT
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ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 2, VVBUS = 5V, HZ_MODE=0, CD=0, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
The threshold when input based DPM loop
kicks in
VIN_DPM
MIN
Charge mode, programmable
DPM loop kick-in threshold tolerance
TYP
MAX
UNIT
4.15
4.71
V
–2%
2%
FAULTY ADAPTER PROTECTION
VVBUS (MIN)
Faulty adapter threshold
3.6
Deglitch time for Faulty adapter
4.0
30
Hysteresis for faulty adapter protection
VVBUS Rising
100
Current source for faulty adapter protection
tINT
3.8
20
Detection Interval
30
V
ms
200
mV
40
mA
2
s
INPUT CURRENT LIMITING
IIN_LIMIT
USB charge mode, current
pulled from PMID
Input current limiting threshold
IIN_LIMIT = 100 mA
90
95
100
IIN_LIMIT = 500 mA
450
475
500
IIN_LIMIT = 800 mA
700
755
800
mA
DCOUT
RDCOUT
DCOUT Pass FET on-resistance
IDCOUT = 500 mA
2
ILIM_DCOUT
DCOUT current limit programmable range
tDGL_DCOUT
Deglitch time from DCOUT current-limit event
to DCOUT latch-off
ILIM_DCOUT
350
Programmable via I C
mΩ
1400
mA
14.5
Programmable via I2C
DCOUT current limit range
300
ILIM_DCOUT = 350mA
270
ILIM_DCOUT = 750mA
650
750
ILIM_DCOUT = 1050mA
800
1050
ILIM_DCOUT = 1400mA
1050
1400
100
120
ms
350
mA
BATTERY RECHARGE THRESHOLD
VRCH
Recharge threshold voltage
Below VOREG
Deglitch time
VCSOUT decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive
150
130
mV
ms
STAT OUTPUTS
VOL(STAT)
VOL(INT)
Low-level output saturation voltage, STAT
IO = 10 mA, sink current
High-level leakage current
Voltage on STAT pin is 5V
0.5
V
1
µA
Low-level output saturation voltage, INT
IO = 1 mA, sink current
0.4
V
High-level leakage current
Voltage on INT pin is 5V
1
µA
I2C BUS LOGIC LEVELS AND TIMING CHARACTERISTICS
VOL
Output low threshold level
IO = 10 mA, sink current
0.4
V
Input low threshold level
V(pull-up) = 1.8 V, SDA and SCL
0.4
V
Input high threshold level
V(pull-up) = 1.8 V, SDA and SCL
I(bias)
Input bias current
V(pull-up) = 1.8 V, SDA and SCL
1
µA
fSCL
SCL clock frequency
1.2
V
3.4
MHz
SLEEP COMPARATOR
VSLP
Sleep-mode entry threshold,
VBUS-VCSOUT
2.3 V ≤ VCSOUT ≤ VOREG, VVBUS falling
VSLP-EXIT
Sleep-mode exit hysteresis
2.3 V ≤ VCSOUT < VOREG
Deglitch time for VBUS rising above
VSLP+VSLP_EXIT
Rising voltage, 2-mV over drive, tRISE = 100 ns
0
40
100
mV
140
200
260
mV
30
ms
UVLO
VUVLO
IC active threshold voltage
VVBUS rising
3.05
3.3
VUVLO_HYS
IC active hysteresis
VVBUS falling from above VUVLO
120
150
3.55
V
Internal top reverse blocking MOSFET
on-resistance
IIN_LIMIT = 500 mA, Measured from VVBUS to PMID
110
210
mΩ
Internal top N-channel Switching MOSFET
on-resistance
Measured from PMID to SW
130
250
mΩ
mV
PWM
4
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ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 2, VVBUS = 5V, HZ_MODE=0, CD=0, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise
noted)
PARAMETER
Internal bottom N-channel MOSFET
on-resistance
fOSC
TEST CONDITIONS
MIN
Measured from SW to PGND
Oscillator frequency
Maximum duty cycle
DMIN
Minimum duty cycle
MAX
UNIT
125
210
mΩ
3.0
Frequency accuracy
DMAX
TYP
–10%
MHz
10%
99.5%
0
Synchronous mode to non-synchronous
mode transition current threshold (1)
Low-side MOSFET cycle-by-cycle current sensing
VDRV
Internal bias voltage regulator
IDRV = 10 mA
IDRV
DRV Output Current
External load on DRV
VDO_DRV
DRV Dropout Voltage (VVBUS – VDRV)
100
5
5.2
mA
5.45
10
IVBUS = 1A, VVBUS = 5 V, IDRV = 10 mA
340
VUVLO < VVBUS
VCOLD or VTSVIN(MIN),
the device continues the startup sequence. If VVBUS VOVP, the bq24180 latches off
the PWM converter, a single 128µs pulse is sent on the STAT and INT outputs and the STATx and FAULT_x
bits of the status registers are updated in the I2C. Once the OVP fault is removed, the STATx and FAULT_x
bits are cleared and the device returns to normal operation.
Charge Status Outputs (STAT, INT)
The STAT and INT outputs are used to indicate operation conditions for bq24180. STAT and INT are pulled low
during charging when EN_STAT bit in the control register (00H) is set to “1”. When charge is complete or
disabled, INT and STAT are high impedance. When a fault occurs, a 128-µs pulse (interrupt) is sent out to notify
the host. The status of STAT and INT during different operation conditions is summarized in Table 1. STAT
drives an LED for visual indication. INT is available for connecting to the logic rail for host communication.
Table 1. STAT Pin Summary
CHARGE STATE
STAT and INT BEHAVIOR
Charge in progress and EN_STAT=1
Low
Other normal conditions
Open-drain
Charge mode faults: Timer fault, sleep mode,
VBUS over voltage, VBUS UVLO, thermal
shutdown
128-µs pulse, then open-drain
Control Bits in Charge Mode
CE Bit (Charge Enable)
The bit of CE in control register is used to disable or enable the charge process. A low logic level (0) on this
bit enables the charge and a high logic level (1) disables the charge.
RESET Bit
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The bit of RESET in control register is used to reset all the charge parameters. Write ‘1” to RESET bit to
reset all the charge parameters to default values and RESET bit is automatically cleared to zero once the
charge parameters get reset. It is designed for charge parameter reset before charge starts and it is not
recommended to set RESET bit when charging or boosting in progress.
Output Inductor and Capacitor Selection Guidelines
The bq24180 provides internal loop compensation. With this scheme, best stability occurs when LC resonant
frequency, of, is approximately 40 kHz (20 kHz to 80 kHz). Equation 1 can be used to calculate the value of the
output inductor, LOUT, and output capacitor, COUT.
1
¦o =
2p ´ LOUT ´ COUT
(1)
To reduce the output voltage ripple, a ceramic capacitor with the capacitance between 4.7µF and 47µF is
recommended for COUT, refer to the application section for components selection.
Selecting Current Sense Resistor
Both the termination current range and charge current range are depending on the sensing resistor (RSNS). The
termination current step (IOTERM_STEP) can be calculated using Equation 2:
V
IOTERM_STEP = ITERM0
RSNS
(2)
Table 2 shows the termination current settings with two sensing resistors.
Table 2. Termination Current Settings for 68mΩ and 100mΩ Sense Resistors
BIT
VITERM (mV)
ITERM (mA)
RSNS = 68 mΩ
ITERM (mA)
RSNS = 100 mΩ
VITERM2
6.8
100
68
VITERM1
3.4
50
43
VITERM0
1.7
25
17
Offset
1.7
25
17
The charge current step (IOCHARGE_STEP) can be calculated using Equation 3:
V
IOCHARG E_STEP = ICHRG0
R SNS
(3)
Table 3 shows the charge current settings with two sensing resistors.
Table 3. Charge Current Settings for 68 mΩ and 100 mΩ Sense Resistors
24
BIT
VIREG (mV)
IOCHARGE (mA)
RSNS = 68 mΩ
IOCHARGE (mA)
RSNS = 100 mΩ
VICHRG3
54.4
800
544
VICHRG2
27.2
400
272
VICHRG1
13.6
200
136
VICHRG0
6.8
100
68
Offset
37.4
550
374
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SERIAL INTERFACE DESCRIPTION
I2C is a 2-wire serial interface developed by Philips Semiconductor (see I2C-Bus Specification, Version 2.1,
January 2000). The bus consists of a data line (SDA) and a clock line (SCL) with pull-up structures. When the
bus is idle, both SDA and SCL lines are pulled high. All the I2C compatible devices connect to the I2C bus
through open drain I/O pins, SDA and SCL. A master device, usually a microcontroller or a digital signal
processor, controls the bus. The master is responsible for generating the SCL signal and device addresses. The
master also generates specific conditions that indicate the START and STOP of data transfer. A slave device
receives and/or transmits data on the bus under control of the master device.
The bq24180 device works as a slave and is compatible with the following data transfer modes, as defined in the
I2C Bus™ Specification: standard mode (100 kbps), fast mode (400 kbps), and high-speed mode (up to 3.4 Mbps
in write mode). The interface adds flexibility to the battery charge solution, enabling most functions to be
programmed to new values depending on the instantaneous application requirements. Register contents remain
intact as long as battery voltage remains above 2.5 V (typical). The I2C circuitry is powered from VBUS when a
supply is connected. If the VBUS supply is not connected, the I2C circuitry is powered from the battery through
CSOUT. The battery voltage must stay above 2.5V with no input connected in order to maintain proper operation.
The data transfer protocol for standard and fast modes is exactly the same; therefore, they are referred to as the
F/S-mode in this document. The protocol for high-speed mode is different from the F/S-mode, and it is referred to
as the HS-mode. The bq24150/1 device only supports 7-bit addressing. The device 7-bit address is defined as
‘1101011’ (6BH).
F/S Mode Protocol
The master initiates data transfer by generating a start condition. The start condition is when a high-to-low
transition occurs on the SDA line while SCL is high, as shown in Figure 33. All I2C -compatible devices should
recognize a start condition.
DATA
CLK
START Condition
STOP Condition
Figure 33. START and STOP Condition
The master then generates the SCL pulses, and transmits the 8-bit address and the read/write direction bit R/W
on the SDA line. During all transmissions, the master ensures that data is valid. A valid data condition requires
the SDA line to be stable during the entire high period of the clock pulse (see Figure 34). All devices recognize
the address sent by the master and compare it to their internal fixed addresses. Only the slave device with a
matching address generates an acknowledge (see Figure 34) by pulling the SDA line low during the entire high
period of the ninth SCL cycle. Upon detecting this acknowledge, the master knows that communication link with a
slave has been established.
DATA
CLK
Data Line
Stable;
Data Valid
Charge
of Data
Allowed
Figure 34. Bit Transfer on the Serial Interface
The master generates further SCL cycles to either transmit data to the slave (R/W bit 1) or receive data from the
slave (R/W bit 0). In either case, the receiver needs to acknowledge the data sent by the transmitter. So an
acknowledge signal can either be generated by the master or by the slave, depending on which one is the
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receiver. the 9-bit valid data sequences consisting of 8-bit data and 1-bit acknowledge can continue as long as
necessary. To signal the end of the data transfer, the master generates a stop condition by pulling the SDA line
from low to high while the SCL line is high (see Figure 35). This releases the bus and stops the communication
link with the addressed slave. All I2C compatible devices must recognize the stop condition. Upon the receipt of
a stop condition, all devices know that the bus is released, and wait for a start condition followed by a matching
address. If a transaction is terminated prematurely, the master needs sending a STOP condition to prevent the
slave I2C logic from remaining in a incorrect state. Attempting to read data from register addresses not listed in
this section will result in FFh being read out.
Data Output
by Transmitter
Not Acknowledge
Data Output
by Receiver
Acknowledge
SCL From
Master
Clock Pulse for
Acknowledgement
START
Condition
Figure 35. Acknowledge on the I2C Bus
Figure 36. Bus Protocol
F/S Mode Protocol
When the bus is idle, both SDA and SCL lines are pulled high by the pull-up devices.
The master generates a start condition followed by a valid serial byte containing HS master code '00001XXX'.
This transmission is made in F/S mode at no more than 400 Kbps. No device is allowed to acknowledge the HS
master code, but all devices must recognize it and switch their internal setting to support 3.4-Mbps operation.
26
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The master then generates a repeated start condition (a repeated start condition has the same timing as the start
condition). After this repeated start condition, the protocol is the same as F/S mode, except that transmission
speeds up to 3.4 Mbps are allowed. A stop condition ends the HS mode and switches all the internal settings of
the slave devices to support the F/S mode. Instead of using a stop condition, repeated start conditions should be
used to secure the bus in HS mode. If a transaction is terminated prematurely, the master needs sending a
STOP condition to prevent the slave I2C logic from remaining in a incorrect state.
Attempting to read data from register addresses not listed in this section results in FFh being read out.
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REGISTER DESCRIPTION
blank paragraph for spacer
Status/Control Register (READ/WRITE) – Memory location: 00, Reset state: x1xx 0xxx
BIT
NAME
Read/Write
FUNCTION
B7(MSB)
TMR_RST
Read/Write
Write: TMR_RST function, write "1" to reset the watchdog timer (auto clear)
Read: 0 – PSEL indicates low, 1- PSEL indicates high
B6
EN_STAT
Read/Write
1-Enable STAT function, 0-Disable STAT function (default 1)
B5
STAT2
Read only
B4
STAT1
Read only
B3
NA
Read only
B2
FAULT_3
Read only
B1
FAULT_2
Read only
B0(LSB)
FAULT_1
Read only
00-Ready, 01-Charge in progress, 10-Charge done, 11-Fault
NA
Charge mode: 000-Normal, 001-VBUS OVP, 010-Sleep mode, 011- Faulty Adapter or
VBUSVSHORT), the maximum values for battery regulation voltage and charge current can be
programmed many times until any writing to other register locks the safety limits. Programmed values exclude
higher values from memory locations 02 (battery regulation voltage), and from memory location 04 (Fast
charge current).
If host accesses (write command) to some other register before Safety limit register, the default values hold!
•
•
blank paragraph for spacer
NTC Monitor Register (READ/WRITE) – Memory location: 07, Reset state: 100X 0000
BIT
NAME
Read/Write
FUNCTION
B7(MSB)
2XTMR_EN
Read/Write
1 – Timer slowed by 2x when in thermal regulation or VIN_HIGH protection,
0 – Timer not slowed at any time (default 1)
B6
TMR_1
Read/Write
B5
TMR_2
Read/Write
Safety Timer Time Limit
00 – 27 minute fast charge,
01 – 3 hour fast charge,
10 – 6 hour fast charge,
11 – Disable safety timers (default 00)
B4
NA
Read/Write
NA
B3
TS_/EN
Read/Write
1 – TS function disabled,
0 – TS function enabled (default 0)
B2
TS_FAULT2
Read only
B1
TS_FAULT1
Read only
B0(LSB)
TS_FAULT0
Read only
TS Fault Mode:
000 – TS temp < 5°C or TS temp > 55°C,
010 – Normal, No TS fault,
011 – 45°C < TS temp < 55°C,
100–111 – TS Open
30
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SLUSA02 A – FEBRUARY 2010 – REVISED FEBRUARY 2010
POWER TOPOLOGIES
System Load After Sensing Resistor
One of the simple high-efficiency topologies connects the system load directly across the battery pack, as shown
in Figure 37. The input voltage has been converted to a usable system voltage with good efficiency from the
input. When the input power is on, it supplies the system load and charges the battery pack at the same time.
When the input power is off, the battery pack powers the system directly.
SW
VBUS
Isns
L1
VIN
+
-
Isys
Rsns
Ichg
bq24180
C1
PMID
+
PGND
C4
C3
System
Load
BAT
C2
Figure 37. System Load After Sensing Resistor
The advantages:
• When the AC adapter is disconnected, the battery pack powers the system load with minimum power
dissipations. Consequently, the time that the system runs on the battery pack can be maximized.
• It saves the external path selection components and offers a low-cost solution.
• Dynamic power management (DPM) can be achieved. The total of the charge current and the system current
can be limited to a desired value by adjusting charge current. When the system current increases, the charge
current drops by the same amount. As a result, no potential over-current or over-heating issues are caused
by excessive system load demand.
• The total of the input current can be limited to a desired value by setting input current limit value. So USB
specifications can be met easily.
• The supply voltage variation range for the system can be minimized.
• The input current soft-start can be achieved by the generic soft-start feature of the IC.
Design considerations and potential issues:
• If the system always demands a high current (but lower than the regulation current), the charging never
terminates. Thus, the battery is always charged, and the lifetime may be reduced.
• Because the total current regulation threshold is fixed and the system always demands some current, the
battery may not be charged with a full-charge rate and thus may lead to a longer charge time.
• If the system load current is large after the charger has been terminated, the voltage drop across the battery
impedance may cause the battery voltage to drop below the refresh threshold and start a new charge. The
charger would then terminate due to low charge current. Therefore, the charger would cycle between
charging and terminating. If the load is smaller, the battery has to discharge down to the refresh threshold,
resulting in a much slower cycling.
• In a charger system, the charge current is typically limited to about 10mA, if the sensed battery voltage is
below 2V short circuit protection threshold. This results in low power availability at the system bus. If an
external supply is connected and the battery is deeply discharged, below the short circuit protection threshold,
the charge current is clamped to the short circuit current limit. This then is the current available to the system
during the power-up phase. Most systems cannot function with such limited supply current, and the battery
supplements the additional power required by the system. Note that the battery pack is already at the
depleted condition, and it discharges further until the battery protector opens, resulting in a system shutdown.
• If the battery is below the short circuit threshold and the system requires a bias current budget lower than the
short circuit current limit, the end-equipment will be operational, but the charging process can be affected
depending on the current left to charge the battery pack. Under extreme conditions, the system current is
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close to the short circuit current levels and the battery may not reach the fast-charge region in a timely
manner. As a result, the safety timers flag the battery pack as defective, terminating the charging process.
Because the safety timer cannot be disabled, the inserted battery pack must not be depleted to make the
application possible.
For instance, if the battery pack voltage is too low, highly depleted, or totally dead or even shorted, the
system voltage is clamped by the battery and it cannot operate even if the input power is on.
System Load Before Sensing Resistor
The second circuit is very similar to first one; the difference is that the system load is connected before the sense
resistor, as shown in Figure 38.
Isys
SW
VBUS
Isns
L1
VIN
+
-
Rsns
Ichg
bq24180
C1
PMID
+
PGND
C4
C3
System
Load
BAT
C2
Figure 38. System Load Before Sensing Resistor
The advantages of system load before sensing resistor to system load after sensing resistor:
• The charger controller is based only on the current goes through the current-sense resistor. So, the constant
current fast charge and termination functions work well, and are not affected by the system load. This is the
major advantage of it.
• A depleted battery pack can be connected to the charger without the risk of the safety timer expiration caused
by high system load.
• The host charger can disable termination and keep the converter running to keep battery fully charged, or let
the switcher terminate when the battery is full and then run off of the battery via the sense resistor.
Design considerations and potential issues:
• The total current is limited by the IC input current limit, or peak current protection, or the thermal regulation
but not the charge current setting. The charge current does not drop when the system current load increases
until the input current limit is reached. This solution is not applicable if the system requires a high current.
• Efficiency declines when discharging through the sense resistor to the system.
DESIGN EXAMPLE FOR TYPICAL APPLICATION CIRCUITS
Systems Design Specifications:
• VBUS = 5 V
• V(BAT) = 4.2 V (1-Cell)
• I(charge) = 1.25 A
• Inductor ripple current = 30% of fast charge current
1. Determine the inductor value (LOUT) for the specified charge current ripple:
L OUT =
VBAT ´ (VBUS - VBAT)
VBUS ´ f ´ D IL
, the worst case is when battery voltage is as close as to half of the input
voltage.
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SLUSA02 A – FEBRUARY 2010 – REVISED FEBRUARY 2010
LOUT =
2.5 ´ (5 - 2.5)
5 ´ (3 ´ 106 ) ´ 1.25 ´ 0.3
(4)
LOUT = 1.11 mH
Select the output inductor to standard 1 mH. Calculate the total ripple current with using the 1-mH inductor:
DIL =
DIL =
VBAT ´ (VBUS - VBAT)
VBUS ´ f ´ LOUT
(5)
2.5 ´ (5 - 2.5)
5 ´ (3 ´ 106 ) ´ (1 ´ 10-6 )
(6)
ΔIL = 0.42 A
Calculate the maximum output current:
DIL
ILPK = IOUT +
2
ILPK = 1.25 +
(7)
0.42
2
(8)
ILPK = 1.46 A
Select 2.5mm by 2.0mm 1-mH 1.5-A surface mount multi-layer inductor. The suggested inductor part
numbers are shown as following.
Table 4. Inductor Part Numbers
PART NUMBER
INDUCTANCE
SIZE
MANUFACTURER
LQM2HPN1R0MJ0
1 mH
2.5 x 2.0 mm
muRata
MIPS2520D1R0
1 mH
2.5 x 2.0 mm
FDK
MDT2520-CN1R0M
1 mH
2.5 x 2.0 mm
TOKO
CP1008
1 mH
2.5 x 2.0 mm
Inter-Technical
2. Determine the output capacitor value COUT using 40 kHz as the resonant frequency:
fo =
1
2p ´
COUT =
COUT =
LOUT ´ COUT
(9)
1
4p2 ´ f02 ´ LOUT
1
(10)
4p2 ´ (40 ´ 103 )2 ´ (1 ´ 10-6 )
(11)
COUT = 15.8 mF
Select two 0603 X5R 6.3V 10-mF ceramic capacitors in parallel i.e., muRata GRM188R60J106M.
3. Determine the sense resistor using the following equation:
V(RSNS)
R(SNS) =
I(CHARGE)
(12)
The maximum sense voltage across sense resistor is 85 mV. In order to get a better current regulation
accuracy, V(RSNS) should equal 100mV, and calculate the value for the sense resistor.
85mV
R(SNS) =
1.25A
(13)
R(SNS) = 68 mΩ
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This is a standard value. If it is not a standard value, then choose the next close value and calculate the real
charge current. Calculate the power dissipation on the sense resistor:
P(RSNS) = I(CHARGE) 2 × R(SNS)
P(RSNS) = 1252 × 0.068
P(RSNS) = 0.106 W
Select 0805 0.25-W 68-mΩ 2% sense resistor, i.e. Sosomu RL122OT-R068-G or RL0816T-R068-F 68-mΩ,
0.125W, 0603, 1%.
PCB LAYOUT CONSIDERATION
It is important to pay special attention to the PCB layout. The following provides some guidelines:
• To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placed
as close as possible to the bq24180. The output inductor should be placed close to the IC and the output
capacitor connected between the inductor and PGND of the IC. The intent is to minimize the current path loop
area from the SW pin through the LC filter and back to the PGND pin. To prevent high frequency oscillation
problems, proper layout to minimize high frequency current path loop is critical (see Figure 39). The sense
resistor should be adjacent to the junction of the inductor and output capacitor. Route the sense leads
connected across the RSNS(R1) back to the IC, close to each other (minimize loop area) or on top of each
other on adjacent layers (do not route the sense leads through a high-current path, see Figure 40).
• Place all decoupling capacitor close to their respective IC pin and as close as to PGND (do not place
components such that routing interrupts power stage currents). All small control signals should be routed
away from the high current paths.
• The PCB should have a ground plane (return) connected directly to the return of all components through vias
(two vias per capacitor for power-stage capacitors, two vias for the IC PGND, one via per capacitor for
small-signal components). A star ground design approach is typically used to keep circuit block currents
isolated (high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A
single ground plane for this design gives good results. With this small layout and a single ground plane, there
is no ground-bounce issue, and having the components segregated minimizes coupling between signals.
• The high-current charge paths into VBUS, PMID and from the SW pins must be sized appropriately for the
maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be
connected to the ground plane to return current through the internal low-side FET.
• Place 4.7mF input capacitor as close to PMID pin and PGND pin as possible to make high frequency current
loop area as small as possible. Place 1mF input capacitor as close to VBUS pin and PGND pin as possible to
make high frequency current loop area as small as possible (see Figure 41).
L1
VBUS
R1
SW
V BAT
High
Frequency
BAT
V IN
PMID
C1
Current
Path
PGND
C3
C2
Figure 39. High Frequency Current Path
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SLUSA02 A – FEBRUARY 2010 – REVISED FEBRUARY 2010
Charge Current Direction
R SNS
To Inductor
To Capacitor and battery
Current Sensing Direction
CSOUT must be as large as
possible to avoid error when
using DCOUT
To CSIN and CSOUT pin
Figure 40. Sensing Resistor PCB Layout
VBUS
Vin+
PMID
SW
1uF
Vin4.7uF
PGND
Figure 41. Input Capacitor Position and PCB Layout Example
PACKAGE SUMMARY
WCSP PACKAGE
(Top View)
CHIP SCALE PACKAGE
(Top Side Symbol For bq24180)
VBUS
VBUS
BOOT
SCL
SDA
PMID
PMID
PMID
INT
CD
SW
SW
SW
PSEL
STAT
PGND
PGND
PGND
DCOUT
DCOUT
CSIN
TS
DRV
CSOUT
CSOUT
D
TI YMLLLLS
bq24180
E
0-Pin A1 Marker, TI-TI Letters, YM- Year Month Date Code, LLLL-Lot Trace Code, S-Assembly Site Code
CHIP SCALE PACKAGING DIMENSIONS
TM
The bq24180 devices are available in a 20-bump chip scale package (YFF, NanoFree ). The package dimensions are:
· D = 2.2 ± 0.05 mm
· E = 2.4 ± 0.05 mm
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SLUSA02 A – FEBRUARY 2010 – REVISED FEBRUARY 2010
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REVISION HISTORY
Changes from Original (February 2010) to Revision A
•
36
Page
Changed ±7 to "-0.3 to 7 V" for "Voltage difference between BOOT and SW inputs (VBOOT –VSW)" parameter of
the Absolute Maximum Ratings table. .................................................................................................................................. 2
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PACKAGE OPTION ADDENDUM
www.ti.com
16-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
BQ24180YFFR
ACTIVE
DSBGA
YFF
25
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
0 to 125
BQ24180
Samples
BQ24180YFFT
ACTIVE
DSBGA
YFF
25
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
0 to 125
BQ24180
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of