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bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
bq2426x 3-A, 30-V, Host-Controlled Single-Input, Single-Cell Switched-Mode Li-Ion Battery
Charger With Power-Path Management and USB-OTG Support
Not Recommended for New Designs : bq24260, bq24261
1 Features
2 Applications
•
•
•
•
•
•
1
•
•
•
•
•
•
Charge Time Optimizer (Enhanced CC/CV
Transition) for Faster Charging
Integrated FETs for up to 3-A Charge Rate at 5%
Accuracy and 93% Peak Efficiency
Boost Capability to Supply 5 V at 1 A at IN for
USB OTG Supply
Integrated 17-mΩ Power-Path MOSFET and
Optional BGATE Control to Maximize Battery Life
and Instantly Start up From a Deeply Discharged
Battery or No Battery
30-V Input Rating With Overvoltage Protection
Supports 5-V USB 2.0/3.0 and 12-V USB Power
Delivery (bq24261/1M)
Small Solution Size In a 2.4-mm × 2.4-mm 36-Pin
WCSP or 4-mm × 4-mm 24-Pin QFN Package
– Total Charging Solution Can be 50 mm2 or
Less With WCSP
Safe and Accurate Battery-Management
Functions Programmed Using I2C Interface
– Charge Voltage, Current, Termination
Threshold, Input Current Limit, VIN_DPM
Threshold
– Voltage-Based, JEITA-Compatible NTC
Monitoring Input
– Thermal Regulation Protection for Input
Current Control
– Thermal Shutdown and Protection
Smart Phones and Tablets
Handheld Products
Power Banks and External Battery Packs
Small Power Tools
Portable Media Players and Gaming
3 Description
The bq24260/bq24261/bq24261M/bq24262 is a
highly integrated single-cell Li-Ion battery charger and
system power path management device that supports
operation from either a USB port or wall adapter
supply. The power-path feature allows the
bq24260/1/1M/2 to power the system from a high
efficiency DC-DC converter while simultaneously and
independently charging the battery. The power path
also permits the battery to supplement the system
current requirements when the adapter cannot. Many
features are programmable using the I2C interface.
To
support
USB
OTG
applications,
the
bq24260/1/1M/2 is configurable to boost the battery
voltage to 5 V and supply up to 1 A at the input. The
battery is charged with three phases: precharge,
constant current, and constant voltage. Thermal
regulation prevents the die temperature from
exceeding 125°C. Additionally, a JEITA-compatible
battery pack thermistor monitoring input (TS) is
included to prevent the battery from charging outside
of its safe temperature range.
Device Information(1)
PART NUMBER
PACKAGE
bq24260/1/1M/2
BODY SIZE (NOM)
DSBGA (36)
2.40 mm × 2.40 mm
QFN (24)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
4 Application Schematic
IN
Charge Time Optimizer Effect
SW
VBUS
D+
D-
System
Load
GND
PGND
Charge Cycle 4000mAh Battery 2A Charge Rate
3
4.4
BOOT
`
PMID
4.2
2.5
SYS
3.8
D+
Voltage (V)
DBAT
CD
SDA
SCL
HOST
bq24260
2
1.5
3.2
1
3
INT
PACK+
TS
TEMP
2.8
VDRV
V I/O
More Energy
Delivered to
the Battery
in the Same
Time
3.6
3.4
PACK-
Charge Current (A) / Efficiency
4
`
0.5
2.6
2.4
0
2000
VBAT_CTO
4000
6000
Time (sec)
VBAT_Traditional
8000
IBAT_CTO
0
10000 11000
IBAT_Traditional
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Application Schematic ..........................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
8.1
8.2
8.3
8.4
8.5
8.6
8.7
9
1
1
1
1
2
4
4
6
Absolute Maximum Ratings ..................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 6
Thermal Information ................................................. 7
Electrical Characteristics........................................... 7
Switching Characteristics ........................................ 11
Typical Characteristics ............................................ 11
Detailed Description ............................................ 13
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
13
14
16
16
9.5 Programming........................................................... 27
9.6 Register Maps ......................................................... 30
10 Application and Implementation........................ 38
10.1 Application Information.......................................... 38
10.2 Typical Application ................................................ 38
11 Power Supply Recommendations ..................... 43
11.1 Requirements for SYS Output .............................. 43
11.2 Requirements for Charging ................................... 43
12 Layout................................................................... 43
12.1 Layout Guidelines ................................................. 43
12.2 Layout Example .................................................... 44
13 Device and Documentation Support ................. 45
13.1
13.2
13.3
13.4
13.5
13.6
Documentation Support .......................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
45
45
45
45
45
45
14 Mechanical, Packaging, and Orderable
Information ........................................................... 46
5 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (April 2015) to Revision E
Page
•
Changed absolute max voltage for logic I/O pins from 5.0 V to 5.5 V .................................................................................. 6
•
Added test condition VIN > VUVLO for VBATUVLO. ...................................................................................................................... 9
•
Changed image object for Figure 42 ................................................................................................................................... 41
•
Added Community Resources Section................................................................................................................................. 45
Changes from Revision C (March 2015) to Revision D
Page
•
Added device bq24261M ....................................................................................................................................................... 1
•
Changed minimum capacitance for DRV pin from 1 µF to 2.2 µF. ........................................................................................ 5
•
Changed absolute max voltage for DRV, SYS from 5.0 V to 5.5 V ....................................................................................... 6
•
Changed VSYSREG(HI) from VBATREG+1.6% to original VBATREG+2.5% typical ........................................................... 7
•
Added bq24261M VSYSREG(HI) = 1.6% typical .................................................................................................................. 7
•
Changed ILIM(DISCH) from 9 A to original 6 A typical .......................................................................................................... 7
•
Added bq24261M ILIM(DISCH) = 9 A typical ........................................................................................................................ 7
•
Added Explanation for Reg05h B4 Force D+/D- ................................................................................................................. 36
•
Changed bypass capacitor value from 1 µF to 2.2 µF in the Typical Application Circuit .................................................... 38
Changes from Revision B (March 2014) to Revision C
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
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Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Changes from Revision A (January 2014) to Revision B
Page
•
Changed global format to new data sheet schema ................................................................................................................ 1
•
Changed device number from "bq24262A" to "bq24262" throughout .................................................................................... 1
•
Changed VBATREG accuracy for 0-125C, added 0-85C, and added mV specific numbers to Elec Charateristics table. ........ 8
•
Added Switching Characteristics ......................................................................................................................................... 11
•
Added Power Supply Recommendations ............................................................................................................................ 43
•
Added Device and Documentation Support ......................................................................................................................... 45
•
Changed location of Ordering Information to Mechanical, Packaging, and Orderable Information ..................................... 46
Changes from Original (December 2013) to Revision A
Page
•
Added specifications to Electrical Characteristics table pertaining to RGE package............................................................. 7
•
Added separate lines for IINLIM current for YFF and RGE packages. ..................................................................................... 9
•
Changed VDO_DRV spec MAX voltage from "500 mV" to "450 mV" ......................................................................................... 9
•
Changed the wording of the Safety Timer description for clarification. ............................................................................... 22
•
Changed text in the F/S Mode Protocol section from "...to either transmit data to the slave (R/W bit 1) or receive
data from the slave (R/W bit 0" to "...to either transmit data to the slave (R/W bit 0) or receive data from the slave
(R/W bit 1" for clarification. ................................................................................................................................................... 28
Copyright © 2013–2015, Texas Instruments Incorporated
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
3
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
www.ti.com
6 Device Comparison Table
PART
NUMBER
OVP
CE BIT
DEFAULT
D+/D–
DETECTION
TIMERS (SAFETY
AND WATCHDOG)
BATTERY
DISCHARGE
CURRENT LIMIT
(MIN)
SYSTEM
REGULATION
VOLTAGE
(TYP)
DEFAULT
VBATREG
bq24260
10.5
0
(Charge Enabled)
Yes
Yes
4A
VBATREG + 2.5%
3.6 V
bq24261
14
1
(Charge
Disabled)
No
Yes
4A
VBATREG + 2.5%
3.6 V
BQ24261M
14
1
(Charge
Disabled)
No
Yes
6A
VBATREG + 1.6%
3.6 V
bq24262
6.5
0
(Charge Enabled)
No
No
4A
VBATREG + 2.5%
4.2 V
7 Pin Configuration and Functions
YFF Package
36-Pin DSBGA
bq24260 (Top View)
bq24261/2 (Top View)
1
2
4
5
A
PGND
PGND
PGND
PGND
PGND
PGND
SW
B
PMID
SW
SW
SW
SW
SW
CD
BOOT
C
IN
IN
IN
IN
CD
BOOT
D+
TS
DRV
D
SDA
SCL
N.C.
PSEL
TS
DRV
SYS
SYS
SYS
SYS
E
STAT
INT
SYS
SYS
SYS
SYS
BAT
BAT
BAT
BAT
F
AGND
BGATE
BAT
BAT
BAT
BAT
1
2
3
4
5
6
A
PGND
PGND
PGND
PGND
PGND
PGND
B
PMID
SW
SW
SW
SW
C
IN
IN
IN
IN
D
SDA
SCL
D–
E
STAT
INT
F
AGND
BGATE
3
6
RGE Package
24-Pin VQFN
PGND
AGND
IN
PGND
IN
SW
AGND
SW
PGND
SW
PGND
19
22
21
23
PMID
1
18 IN
PMID
1
18 IN
BOOT
2
17 SDA
BOOT
2
17 SDA
DRV
3
16 SCL
DRV
3
16 SCL
bq24260
bq24261
bq24262
SYS 6
13 STAT
INT
BGATE
AGND
SYS
BAT
12
BAT
11
SYS
10
9
7
8
12
9
11
8
10
7
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AGND
14 PSEL
13 STAT
15 N.C.
INT
TS 5
BGATE
CD 4
14 D+
BAT
15 D–
TS 5
BAT
CD 4
SYS 6
4
20
24
22
19
23
21
24
20
SW
(Top View)
Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Pin Functions
PIN
NAME
bq24260
bq24261/1M/2
I/O
DESCRIPTION
DSBGA
VQFN
DSBGA
VQFN
F1
12, 20
F1
12, 20
F3-F6
8, 9
F3-F6
8, 9
I/O
Battery Connection. Connect to the positive terminal of the battery. Bypass BAT to GND with at
least 1 μF of ceramic capacitance. See Application and Implementation for additional details.
F2
11
F2
11
O
External Discharge MOSFET Gate Connection. BGATE drives an external P-Channel MOSFET
to provide a very low resistance discharge path. Connect BGATE to the gate of the external
MOSFET. BGATE is low during high impedance mode or when no input is connected. If no
external FET is required, leave BGATE disconnected. Do not connect BGATE to GND.
C6
2
C6
2
I
High Side MOSFET Gate Driver Supply. Connect 0.033 µF of ceramic capacitance (voltage
rating > 10 V) from BOOT to SW to supply the gate drive for the high side MOSFET.
C5
4
C5
4
I
IC Hardware Disable Input. Drive CD high to place the bq24260/1/1M/2 in hi-z mode. Drive CD
low for normal operation. CD is pulled low internally with 100 kΩ.
D+
D4
14
–
–
I
D–
D3
15
–
–
I
D6
3
D6
3
O
Gate Drive Supply. DRV is the bias supply for the gate drive of the internal MOSFETs. Bypass
DRV to PGND with a 10-V or higher rated, +/-10%, X5R or better 2.2 µF ceramic capacitor. DRV
may be used to drive external loads up to 10mA. DRV is active whenever the input is connected
and VIN > VUVLO and VIN > (VBAT + VSLP).
C1-C4
18, 19
C1-C4
18, 19
I
DC Input Power Supply. IN is connected to the external DC supply (AC adapter or USB port).
Bypass IN to PGND with at least a 4.7 μF of ceramic capacitance.
AGND
BAT
Analog Ground. Connect to the thermal pad (for QFN only) and the ground plane of the circuit.
BGATE
BOOT
CD
DRV
IN
INT
D+ and D– Connections for USB Input Adapter Detection. When a source is initially connected
to the input during DEFAULT mode, and a short is detected between D+ and D–, the input
current limit is set to 1.5 A. If a short is not detected, the USB100 mode is selected.
E2
10
E2
10
O
Status Output. INT is an open-drain output that signals charging status and fault interrupts. INT
pulls low during charging. INT is high impedance when charging is complete, disabled or the
charger is in high impedance mode. When a fault occurs, a 128-μs pulse is sent out as an
interrupt for the host. INT is enabled /disabled using the EN_STAT bit in the control register.
Connect INT to a logic rail through a 100-kΩ resistor to communicate with the host processor.
A1-A6
21,22
A1-A6
21,22
–
Ground terminal. Connect to the thermal pad (for QFN only) and the ground plane of the circuit.
B1
1
B1
1
I
High Side Bypass Connection. Connect at least 1 µF of ceramic capacitance from PMID to
PGND as close to the PMID and PGND terminals as possible.
–
–
D4
14
I
Hardware Input Current Limit. In DEFAULT mode, PSEL selects the input current limit. Drive
PSEL high to select USB100 (bq24261/1M) or USB500 (bq24262) mode, drive PSEL low to
select 1.5 A mode.
SCL
D2
16
D2
16
I
I2C Interface Clock. Connect SCL to the logic rail through a 10-kΩ resistor. Do not leave floating.
SDA
D1
17
D1
17
I/O
I2C Interface Data. Connect SDA to the logic rail through a 10-kΩ resistor.
PGND
PMID
PSEL
STAT
SW
E1
13
E1
13
O
Status Output. STAT is an open-drain output that signals charging status and fault interrupts.
STAT pulls low during charging. STAT is high impedance when charging is complete, disabled
or the charger is high impedance mode. When a fault occurs, a 128-μs pulse is sent out as an
interrupt for the host. STAT is enabled /disabled using the EN_STAT bit in the control register.
Connect STAT to a logic rail using an LED for visual indication or through a 100-kΩ resistor to
communicate with the host processor.
B2-B6
23, 24
B2-B6
23, 24
O
Inductor Connection. Connect to the switched side of the external inductor. The inductance must
be between 1.5 µH and 2.2 µH.
E3-E6
6, 7
E3-E6
6, 7
I
System Voltage Sense and Charger FET Connection. Connect SYS to the system output at the
output bulk capacitors. Bypass SYS locally with at least 10 μF of ceramic capacitance. The SYS
rail must have at least 20 µF of total capacitance for stable operation. See Application and
Implementation for additional details.
SYS
TS
Thermal
Pad
D5
5
D5
5
I
Battery Pack NTC Monitor. Connect TS to the center tap of a resistor divider from DRV to GND.
The NTC is connected from TS to GND. The TS function provides 4 thresholds for JEITA
compatibility. TS faults are reported by the I2C interface. Pull TS high to VDRV to disable the TS
function if unused. See the NTC Monitor section for more details on operation and selecting the
resistor values.
–
–
–
–
–
There is an internal electrical connection between the exposed thermal pad and the PGND
terminal of the device. The thermal pad must be connected to the same potential as the PGND
terminal on the printed circuit board. Do not use the thermal pad as the primary ground input for
the device. PGND terminal must be connected to ground at all times.
Copyright © 2013–2015, Texas Instruments Incorporated
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
5
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
www.ti.com
8 Specifications
8.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
IN
BOOT, PMID
Terminal Voltage (with respect to
SW
PGND)
BAT
DRV, SYS, BGATE, CD, INT, PSEL, SDA, SCL, STAT, TS
BOOT to SW
Output Current (Continuous)
Output Current ( VBAT + VSLP
PWM switching
IIN
Supply current for control
IBAT_HIZ
Battery discharge current in
High Impedance mode, (BAT,
SW, SYS)
15
YFF Package: VUVLO < VIN < VOVP and VIN > VBAT + VSLP
PWM NOT switching
6.5
RGE Package: VUVLO < VIN < VOVP and VIN > VBAT + VSLP
PWM NOT switching
6.65
0°C < TJ < 85°C, VIN = 5 V, Hi-Z Mode
250
0°C < TJ < 85°C, VBAT = 4.2 V, VIN = 5 V,
SCL, SDA = 0 V or 1.8 V, Hi-Z Mode
15
YFF Package: 0°C < TJ < 85°C, VBAT = 4.2 V, VIN = 0 V,
SCL, SDA = 0 V or 1.8 V
77
RGE Package: 0°C < TJ < 85°C, VBAT = 4.2 V, VIN = 0 V,
SCL, SDA = 0 V or 1.8 V
80
mA
μA
μA
POWER-PATH MANAGEMENT
VSYSREG(LO)
VSYSREG(HI)
System Regulation Voltage
VBAT < VMINSYS
VMINSYS
+ 80 mV
VMINSYS
+ 100 mV
VMINSYS
+ 120
mV
bq24260/1/2 - Battery FET turned off, no charging, VBAT > 3.5
V
VBATREG
+2.2%
VBATREG
+2.5%
VBATREG
+2.77%
bq24261M - Battery FET turned off, no charging, VBAT > 3.5 V
VBATREG
+1.4%
VBATREG
+1.6%
VBATREG
+1.77%
3.44
3.5
3.55
System Regulation Voltage
V
V
VMINSYS
Minimum System Voltage
Regulation Threshold
tDGL(MINSYS_CMP)
Deglitch time, VMINSYS
comparator rising
VBSUP1
Enter supplement mode
threshold
VBAT > VBUVLO
VBAT – 20
mV
V
VBSUP2
Exit supplement mode
threshold
VBAT > VBUVLO
VBAT – 5
mV
V
ILIM(DISCH)
Current Limit, Discharge or
Supplement Mode (1)
tDGL(SC1)
Deglitch Time, SYS Short
Circuit during Discharge or
Supplement Mode
tREC(SC1)
Recovery time, SYS Short
Circuit during Discharge or
Supplement Mode
VBAT + VDO(SYS_BAT) < 3.5 V
8
bq24260/1/2 - VLIM(BGATE) = VBAT – VSYS
4
6
bq24261M - VLIM(BGATE) = VBAT – VSYS
6
9
Measured from IBAT = 7A to FET off
Battery Range for BGATE
Operation
(1)
2.5
V
ms
A
250
μs
2
s
4.5
V
Continuous and periodic pulse currents from BAT to SYS are limited by Output Current specifications in Absolute Maximum Ratings
table.
Copyright © 2013–2015, Texas Instruments Incorporated
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
7
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
www.ti.com
Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
YFF
17
25
RGE
32
47
UNIT
BATTERY CHARGER
RON(BAT-SYS)
VBATREG
Internal battery charger
MOSFET ON-resistance
Measured from BAT to SYS,
VBAT = 4.2 V, Hi-Z mode
Charge Voltage
Operating in voltage regulation, Programmable Range
RGE Package Voltage
Regulation Accuracy
3.5
4.44
TJ = 0°C to 50°C
–0.5%
0.5%
RGE Package Voltage
Regulation Accuracy
TJ = 0°C to 85°C
–0.7%
0.7%
YFF Package Voltage
Regulation Accuracy
TJ = 0°C to 85°C
–0.75%
0.75%
RGE and YFF Package
Voltage Regulation Accuracy
TJ = 0°C to 125°C
–1.0%
1.0%
YFF Package Voltage
Regulation Accuracy
TJ = 25°C
–29.2
28.1
YFF Package Voltage
Regulation Accuracy
TJ = 0°C to 85°C
–32.0
29.3
YFF Package Voltage
Regulation Accuracy
TJ = 0°C to 125°C
–40.2
29.3
500
3000
–10%
10%
Fast Charge Current Range
VBATSHRT ≤ VBAT < VBAT(REG)
ICHARGE
Fast Charge Current
Accuracy
500 mA ≤ ICHARGE ≤ 1A
VBATSHRT
Battery short-circuit threshold
VBATSHRT_HYS
Hysteresis for VBATSHRT
Battery voltage falling
Deglitch time for battery short
to fastcharge transition
VBAT rising or falling
IBATSHRT
Battery short-circuit charge
current
VBAT < VBATSHRT
ITERM
Termination charge current
ICHARGE > 1000 mA
–5%
1.9
33.5
ITERM ≤ 50 mA
50 mA <
ITERM
< 200 mA
ITERM ≥ 200 mA
mΩ
V
mV
mA
5%
2
2.1
V
100
mV
1
ms
50
66.5
–30%
30%
–15%
15%
–15%
10%
mA
tDGL(TERM)
Deglitch time for charge
termination
Both rising and falling, 2-mV over-drive,
tRISE, tFALL=100 ns
VRCH
Recharge threshold voltage
Below VBATREG
tDGL(RCH)
Deglitch time
VBAT falling below VRCH, tFALL=100 ns
VDET(SRC1)
Battery detection voltage
threshold
(TE = 1)
During current source (Turn IBATSHRT off)
VRCH
V
During current source (Turn IBATSHRT on)
VRCH
– 200mV
V
During current sink
VBATSHRT
V
VDET(SRC2)
VDET(SNK)
32
100
120
32
ms
150
mV
ms
IDETECT
Battery detection current
before charge done (sink
current)
Termination enabled (TE = 1)
7
mA
tDETECT(SRC)
Battery detection time
(sourcing current)
Termination enabled (TE = 1)
2
s
tDETECT(SNK)
Battery detection time (sinking
Termination enabled (TE = 1)
current)
250
8
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ms
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENT LIMITING
IINLIM
VIN_DPM
Input current limiting threshold
Input based DPM threshold
range
USB charge mode, VIN = 5 V, Current
pulled from SW
IINLIM=USB100
90
95
100
IINLIM=USB500
450
475
500
IINLIM=USB150
125
140
150
IINLIM=USB900
800
850
900
IINLIM=1.5 A
1425
1500
1575
IINLIM=2 A, YFF
Package
1850
2000
2150
IINLIM=2 A, RGE
Package
1850
2000
2200
IINLIM=2.5 A, YFF
Package
2300
2500
2700
IINLIM=2.5 A,
RGE Package
2225
2500
2825
Charge mode, programmable via I2C
VIN_DPM threshold Accuracy
4.2
11.6
–3%
3%
mA
V
VDRV BIAS REGULATOR
VDRV
Internal bias regulator voltage
IDRV
DRV Output Current
VDO_DRV
DRV Dropout Voltage
(VIN – VDRV)
VIN > 5 V
4.3
4.8
5.3
V
10
mA
IIN = 1 A, VIN = 4.2 V, IDRV = 10 mA
450
mV
0.4
V
1
µA
0.4
V
0
STATUS OUTPUT (STAT, INT)
VOL
Low-level output saturation
voltage
IO = 10 mA, sink current
IIH
High-level leakage current
V STAT = VINT = 5 V
INPUT PINS (CD, PSEL)
VIL
Input low threshold
VIH
Input high threshold
RPULLDOWN
CD pulldown resistance
1.4
Deglitch for CD and PSEL
V
CD Only
100
kΩ
CD or PSEL rising/falling
100
µs
PROTECTION
VUVLO
IC active threshold voltage
VIN rising
VUVLO_HYS
IC active hysteresis
VIN falling from above VUVLO
3.2
300
VBATUVLO
Battery Undervoltage Lockout
threshold
VBAT falling, VIN > VUVLO
2.4
2.6
V
VSLP
Sleep-mode entry threshold,
VIN-VBAT
2.0 V < VBAT < VBATREG, VIN falling
40
120
mV
tDGL(BAT)
Deglitch time, BAT above
VBATUVLO before SYS starts to
rise
VSLP_HYS
Sleep-mode exit hysteresis
VIN rising above VSLP
tDGL(VSLP)
Deglitch time for supply rising
above VSLP+VSLP_HYS
Rising voltage, 2-mV over drive, tRISE=100 ns
VOVP
Input supply OVP threshold
voltage
IN rising, 100-mV hysteresis
0
3.3
3.4
1.2
40
ms
190
30
10.1
10.5
10.9
bq24261/1M
13.6
14
14.4
bq24262
6.25
6.5
6.75
3.51
3.7
3.89
Good Battery Monitor
Threshold (BQ24260/1 only)
VIN Rising
tDGL(BUCK_OVP)
Deglitch time, VIN OVP in
Buck Mode
IN falling below VOVP
VBOVP
Battery OVP threshold voltage VBAT threshold over VOREG to turn off charger during charge
30
1.03 ×
VBATREG
1.05 ×
VBATREG
V
V
ms
1.07 ×
VBATREG
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mV
ms
bq24260
VBATGD
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100
V
mV
V
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Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
VBOVP_HYS
VBOVP hysteresis
Lower limit for VBAT falling from above VBOVP
tDGL(BOVP)
BOVP Deglitch
Battery entering/exiting BOVP
ICbCLIMIT
Cycle-by-cycle current limit
VSYS shorted
TSHTDWN
Thermal trip
MIN
Thermal regulation threshold
MAX
8
4.1
Input current begins to cut off
4.5
ms
4.9
A
150
°C
10
°C
125
Safety Timer Accuracy
UNIT
% of
VBATREG
1
Thermal hysteresis
TREG
TYP
–20%
°C
20%
PWM
Internal top MOSFET ONresistance
YFF Package: Measured from IN to SW
75
120
mΩ
RGE Package: Measured from IN to SW
80
135
mΩ
RDSON_Q2
Internal bottom N-channel
MOSFET ON-resistance
YFF Package: Measured from SW to PGND
75
115
mΩ
RGE Package: Measured from SW to PGND
80
135
mΩ
fOSC
Oscillator frequency
1.5
1.65
MHz
DMAX
Maximum duty cycle
DMIN
Minimum duty cycle
RDSON_Q1
1.35
95%
—
0%
BATTERY-PACK NTC MONITOR (1)
VHOT
High temperature threshold
VTS falling, 2% VDRV Hysteresis
27.3
30
32.6
%VDRV
VWARM
Warm temperature threshold
VTS falling, 2% VDRV Hysteresis
36.0
38.3
41.2
%VDRV
VCOOL
Cool temperature threshold
VTS rising, 2% VDRV Hysteresis
54.7
56.4
58.1
%VDRV
VCOLD
Low temperature threshold
VTS rising, 2% VDRV Hysteresis
58.2
60
61.8
%VDRV
TSOFF
TS Disable threshold
VTS rising, 4% VDRV Hysteresis
80
85
%VDRV
tDGL(TS)
Deglitch time on TS change
Applies to VHOT, VWARM, VCOOL and VCOLD
50
ms
I2C-COMPATIBLE INTERFACE
VIH
Input low threshold level
VPULL-UP=1.8 V, SDA and SCL
VIL
Input low threshold level
VPULL-UP=1.8 V, SDA and SCL
1.3
0.4
VOL
Output low threshold level
IL=5 mA, sink current
0.4
V
IBIAS
High-Level leakage current
VPULL-UP=1.8 V, SDA and SCL
1
μA
tWATCHDOG
30
tI2CRESET
V
V
50
s
700
ms
OTG BOOST SUPPLY
Quiescent current during
boost mode (BAT pin)
3.3 V < VBAT < 4.5 V, no switching
Battery voltage range for
specified boost operation
VBAT falling
VIN_BOOST
Boost output voltage (to pin
VBUS)
3.3 V < VBAT < 4.5 V over line and load
IBO
Maximum output current for
boost
3.3 V < VBAT < 4.5 V
IBLIMIT
Cycle by cycle current limit for
boost (measured at low-side
FET)
3.3 V < VBAT < 4.5 V
VBOOSTOVP
Overvoltage protection
threshold for boost (IN pin)
Signals fault and exits boost mode
tDGL(BOOST_OVP)
Deglitch Time, VIN OVP in
Boost Mode
VBURST(ENT)
Upper VIN voltage threshold to
enter burst mode (stop
switching)
5.1
5.2
5.3
V
VBURST(EXIT)
Lower VBUS voltage threshold
to exit burst mode (start
switching)
4.9
5
5.1
V
IQBAT_ BOOST
10
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3.3
4.95
BOOST_ILIM = 1
1000
BOOST_ILIM = 0
500
5.05
µA
4.5
V
5.2
V
mA
BOOST_ILIM = 1
4
BOOST_ILIM = 0
2
5.8
100
6
A
6.2
170
V
µs
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
8.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
fOSC
Oscillator frequency
DMAX
Maximum duty cycle
DMIN
Minimum duty cycle
MIN
1.35
TYP
MAX
UNIT
1.5
1.65
MHz
95%
0%
8.7 Typical Characteristics
10
95
6
90
4
Efficiency (%)
Charge Current Accuracy (%)
8
2
0
-2
TA=25ºC
-4
85
80
TA=0ºC
-6
VIN=10V
75
TA=85ºC
VIN=12V
TA=60ºC
-8
-10
2.9
70
3.1
3.3
3.5
3.7
3.9
VBAT (V)
4.1
4.3
4.5
Figure 1. Charge Current vs Battery Voltage
0
0.5
1
1.5
2
Load Current (A)
2.5
3
Figure 2. Efficiency vs Output Current
0.0
90
-0.5
VBAT Accuracy (%)
100
80
Efficiency (%)
VIN=5V
VIN=7V
70
60
-1.0
-1.5
-2.0
TA=25ºC
50
TA=60ºC
TA=0ºC
-2.5
40
-3.0
2
2.5
3
3.5
4
VBAT (V)
Figure 3. Efficiency vs Battery Voltage
Copyright © 2013–2015, Texas Instruments Incorporated
4.5
0
0.5
1
1.5
IBAT (A)
Figure 4. VBAT Accuracy vs IBAT – 4.2-V Setting
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16
700
14
600
12
500
Input Current (μA)
Input Current - mA
Typical Characteristics (continued)
10
8
6
4
300
200
Input Current (μA)
100
2
0
0
-100
-2
0
2
4
6
8
10
Input Voltage - V
12
14
Figure 5. Input IQ - No Battery, No System
12
400
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16
3
5
7
9
11
13
15
Input Voltage (V)
Figure 6. Input IQ With Hi-Z Enabled
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
9 Detailed Description
9.1 Overview
The bq24260/1/1M/2 is a highly integrated single-cell Li-Ion battery charger and system power-path management
device targeted for space-limited, portable applications with high capacity batteries. The single-cell charger has a
single input that supports operation from either a USB port or wall adapter supply for a versatile solution.
The power-path management feature allows the bq24260/1/1M/2 to power the system from a high efficiency DCDC converter while simultaneously and independently charging the battery. The charger monitors the battery
current at all times and reduces the charge current when the system load requires current above the input
current limit or the adapter cannot support the required load, causing the adapter voltage to fall (VIN_DPM). This
allows for proper charge termination and timer operation. The system voltage is regulated to the battery voltage
but will not drop below 3.5 V (VMINSYS). This minimum system voltage support enables the system to run with a
defective or absent battery pack and enables instant system turnon even with a totally discharged battery or no
battery. The power-path management architecture also permits the battery to supplement the system current
requirements when the adapter cannot deliver the peak system currents. The power-path feature coupled with
VIN-DPM, enables the use of many adapters with no hardware change. The charge parameters are
programmable using the I2C interface. To support USB OTG applications, the bq24260/1/1M/2 is configurable to
boost the battery voltage to 5 V at the input. In this mode, the bq24260/1/1M/2 supplies up to 1 A and operates
with battery voltages down to 3.3 V.
The battery is charged using a standard Li-Ion charge profile with three phases: precharge, constant current, and
constant voltage. In all charge phases, an internal control loop monitors the IC junction temperature and reduces
the input current to prevent the junction temperature from rising above 125°C. Additionally, a voltage-based,
JEITA-compatible battery pack thermistor monitoring input (TS) is included that monitors battery temperature and
automatically changes charge parameters to prevent the battery from charging outside of its safe temperature
range.
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9.2 Functional Block Diagram
PMID
4.8V
Reference
DRV
IN
ICbCLimit
+
BOOT
IINLIM
Q1
DC-DC CONVERTER PWM LOGIC,
COMPENSATION AND BATTERY
FET CONTROL
VINDPM
VSYS(REG)
IBAT(REG)
VBAT(REG)
SW
DIE Temp
Regulation
Q2
PGND
VSUPPLY
SYS
References
OVP
Comparator
VIN
Termination
Reference
+
Q3
VINOVP
+
Termination
Comparator
Sleep
Comparator
VIN
+
IBAT
BAT
Recharge Comparator
VBAT +VSLP
Start Recharge
Cycle
+
VBATREG ± 0.12V
VBAT
Hi-Impedance Mode
Hi-Z
Mode
CD
Enable Linear
Charge
VSYSREG Comparator
+
VSYS
VMINSYS
+
Enable HiZ in
DEFAULT mode
SDA
I2C
Interface
BGATE
VBATGD
VBATSC Comparator
SCL
Enable
IBATSHRT
+
VBAT
VBATSHRT
Supplement COMPARATOR
+
D+
D-
VSYS
VBAT
bq24260
USB
Adapter
Detection
Circuitry
VBSUP
VDRV
VBOVP Comparator
+
1.5A /
USB100
VBAT
VBATOVP
+
DISABLE
bq24261/2
TS COLD
PSEL
1C/
0.5C
+
TS COOL
+
VBATREG
± 0.14V
STAT
TS WARM
+
DISABLE
INT
CHARGE
CONTROLLER
TS HOT
TS
w/ Timers
Figure 7. Block Diagram in Charging Mode
14
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Functional Block Diagram (continued)
PMID
4.8-V
Reference
DRV
IN
BOOT
VBOOST Amp
+
Q1
VIN_BOOST
VBURST_ENT
Burst Mode Enter
Comparator
DC-DC
Low Side Current
CONVERTER
Limit Comparator
PWM LOGIC
AND
IBLIMITI
COMPENSATION
+
VBURST_EXT
SW
+
+
VDRV
Q2
Burst Mode Exit
Comparator
PGND
Boost Short Circuit
Comparator
VBOOSTSHRT
+
VBOOSTOVP
+
VBOOST
OVP Comparator
SYS
Battery SC Comparator
VBAT
CD
SDA
VBIAS
Battery Short
Circuit
Q3
+
ILIM(DISCH)
BAT
Hi-Z
Mode
2
I C
interface
SCL
BGATE
Digital Control
STAT
INT
TS
Figure 8. Block Diagram in Boost Mode
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9.3 Feature Description
The bq24260/1/1M/2 is a highly integrated single-cell Li-Ion battery charger and system power path management
device that supports operation from either a USB port or wall adapter supply. The power path feature allows the
bq24260/1/1M/2 to power the system from a high efficiency DC-DC converter while simultaneously and
independently charging the battery. The power path also permits the battery to supplement the system current
requirements when the adapter cannot. Many features are programmable using the I2C interface. To support
USB OTG applications, the bq24260/1/1M/2 is configurable to boost the battery voltage to 5 V and supply up to 1
A at the input. The battery is charged with three phases: precharge, constant current and constant voltage.
Thermal regulation prevents the die temperature from exceeding 125°C. Additionally, a JEITA compatible battery
pack thermistor monitoring input (TS) is included to prevent the battery from charging outside of its safe
temperature range.
Device Functional Modes explains these features in detail.
9.4 Device Functional Modes
9.4.1 High Impedance Mode
High Impedance mode (Hi-Z mode) is the low quiescent current state for the bq24260/1/1M/2. During Hi-Z mode,
the buck converter is off, and the battery FET and BGATE are on. SYS is powered by BAT. The bq24260/1/1M/2
is in Hi-Z mode when VIN < VUVLO, the HZ_MODE bit in the I2C is '1' or the CD terminal is driven high. Hi-Z mode
resets the safety timer.
The bq24260/1/1M/2 contains a CD input that is used to disable the IC and place the bq24260/1/1M/2 into highimpedance mode. Drive CD low to enable the bq24260/1/1M/2 and enter normal operation. Drive CD high to
disable charge and place the bq24260/1/1M/2 into high-impedance mode. CD is internally pulled down to PGND
with a 100-kΩ resistor. When exiting Hi-Z mode, charging resumes in approximately 110 ms.
9.4.2 Battery Only Connected
When the battery is connected with no input source, the battery FET turns on, connecting BAT and SYS, after
the battery voltage rises above VBATUVLO and the deglitch time, tDGL(BAT). In this mode, the current is not
regulated; however, there is a short-circuit current limit. If the short-circuit limit (ILIM(DISCHG)) is reached for the
deglitch time (tDGL(SC)), the battery FET is turned off for the recovery time (tREC(SC)). After the recovery time, the
battery FET is turned on to test and see if the short has been removed. If it has not, the FET turns off and the
process repeats until the short is removed. This process protects the internal FET from overcurrent. If an
external FET is used for discharge, the body diode prevents the load on SYS from being disconnected from the
battery and tDGL(BAT) is not applicable.
9.4.3 Input Connected
9.4.3.1 Input Voltage Protection in Charge Mode
9.4.3.1.1 Sleep Mode
The bq24260/1/1M/2 enters the low-power sleep mode if the voltage on VIN falls below sleep-mode entry
threshold, VBAT+VSLP, and VIN is higher than the undervoltage lockout threshold, VUVLO. In sleep mode, the input
is isolated from the battery. This feature prevents draining the battery during the absence of VIN. When VIN <
VBAT+ VSLP, the bq24260/1/1M/2 turns off the PWM converter, turns the battery FET and BGATE on, sends a
single 128-μs pulse on the STAT and INT outputs and the STATx and FAULT_x bits of the status registers are
updated in the I2C. Once VIN > VBAT+ VSLP, the STATx bits are cleared and the device initiates a new charge
cycle. The FAULT_x bits are not cleared until they are read in the I2C and the sleep condition no longer exists.
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Device Functional Modes (continued)
9.4.3.1.2 Input Voltage Based Dynamic Power Management (VIN-DPM)
During normal charging process, if the input power source is not able to support the programmed or default
charging current, the supply voltage deceases. Once the supply drops to VIN_DPM (default 4.2 V), the charge
current limit is reduced to prevent the further drop of the supply. When the IC enters this mode, the charge
current is lower than the set value and the DPM_STATUS bit is set. This feature ensures IC compatibility with
adapters with different current capabilities without a hardware change. Figure 9 shows the VIN-DPM behavior to a
current limited source. In this figure the input source has a 2-A current limit and the device is charging at 1 A. A
2.5-A load transient then occurs on VSYS causing the adapter to hit its current limit and collapse, while VSYS goes
from VSYSREG(LO) to VMINSYS. If the 2X timer is set, the safety timer is extended while VIN-DPM is active.
Additionally, termination is disabled.
VIN
1V/div
Input voltage regulated to VIN_DPM
(5V Offset)
Input current limit reduced to avoid crashing adapter
2A/div
IIN
500mV/div
VSYS
(3.6V Offset)
IBAT
Normal Charging (1A)
SYS enters supplement mode to ensure SYS load is supported
SYS load removed,
normal charging
resumes
2A/div
2A/div
ISYS
800us/div
Figure 9. bq24260/1/1M/2 VIN-DPM
9.4.3.1.3 Input Overvoltage Protection
The built-in input overvoltage protection protects the bq24260/1/1M/2 and downstream components connected to
SYS and/or BAT against damage from overvoltage on the input supply (Voltage from VIN to PGND). When VIN >
VOVP, the bq24260/1/1M/2 turns off the PWM converter immediately. After the deglitch time tDGL(BUCK_OVP), an
OVP fault is determined to exist. During the OVP fault, the bq24260/1/1M/2 turns the battery FET and BGATE
on, sends a single 128-μs pulse on the STAT and INT outputs, and the STATx and FAULT_x bits are updated in
the I2C. Once the OVP fault is removed, the STATx bits are cleared and the device returns to normal operation.
The FAULT_x bits are not cleared until they are read in the I2C after the OVP condition no longer exists.
The OVP threshold for the bq24260 is 10.5 V for operation from standard adapters while the bq24261/1M is set
to 14 V to enable operation from 12-V sources. The bq24262 OVP is set to 6.5 V to operate from standard USB
sources.
9.4.3.2 Charge Profile
When a valid input source is connected (VIN > VUVLO and VBAT + VSLP < VIN < VOVP), the CE bit in the control
register determines whether a charge cycle is initiated. By default, the bq24260 and bq24262 enable the charge
cycle when a valid input source is connected while the bq24261/1M do not (CE = 1 by default). When the CE bit
is 1 and a valid input source is connected, the battery FET is turned off and the SYS output is regulated to
VSYSREG(HI). A charge cycle is initiated when the CE bit is written to a 0.
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Device Functional Modes (continued)
The bq24260/1/1M/2 supports a precision Li-Ion or Li-Polymer charging system for single-cell applications.
Charging is done through the internal battery MOSFET. There are 6 loops that influence the charge current;
constant current loop (CC), constant voltage loop (CV), thermal regulation loop, minimum system voltage loop
(MINSYS), input current limit and VIN-DPM. During the charging process, all six loops are enabled and the one
that is dominant takes control. The minimum system output feature regulates the system voltage to VSYSREG(LO),
so that startup is enabled even for a missing or deeply discharged battery. Figure 10 shows a typical charge
profile including the minimum system output voltage feature.
Precharge
Phase
Current Regulation
Phase
Voltage Regulation
Phase
Regulation
Voltage
Regulation
Current
System Voltage
VSYS
(3.6V)
VBATSHORT
(2.0V)
Battery
Voltage
Charge Current
Termination
IBATSHORT
50mA Linear Charge
to Close Pack
Protector
Linear Charge
to Maintain
Minimum
System
Voltage
Battery FET (Q3) is
ON
Battery
FET
is OFF
Figure 10. Typical Charging Profile of bq24260/1/1M/2 With Termination Enabled
9.4.4 Battery Charging Process
When the battery is deeply discharged or shorted, the bq24260/1/1M/2 applies a IBATSHRT current to close the
battery protector switch and bring the battery voltage up to acceptable charging levels. During this time, the
battery FET is off and the system output is regulated to VSYSREG(LO). Once the battery rises above VBATSHRT, the
charge current is regulated to the value set in the I2C register. The battery FET is linearly regulated to maintain
the system voltage at VSYSREG(LO). Under normal conditions, the time spent in this region is a very short
percentage of the total charging time, so the linear regulation of the charge current does not affect the overall
charging efficiency for very long. If the die temperature does heat up, the thermal regulation loop reduces the
input current to maintain a die temperature at 125°C. If the current limit for the SYS output is reached (limited by
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Device Functional Modes (continued)
the input current limit, VIN-DPM, or 100% duty cycle), the SYS output drops to the VMINSYS output voltage. When
this happens, the charge current is reduced to ensure the system is supplied with all the current that is needed
while maintaining the minimum system voltage. If the charge current is reduced to 0 mA, pulling further current
from SYS causes the output to fall to the battery voltage and enter supplement mode (see Dynamic Power-Path
Management for more details).
Once the battery is charged enough that the system voltage rises above VSYSREG(LO) (approximately 3.5 V), the
battery FET is turned on fully and the battery is charged with the full programmed charge current set by the I2C
interface, ICHARGE. The charge current is regulated to ICHARGE until the voltage between BAT and PGND reaches
the regulation voltage. The voltage between BAT and PGND is regulated to VBATREG (CV mode) while the charge
current naturally tapers down as shown in Figure 10. During CV mode, the SYS output remains connected to the
battery. The impedance of the battery FET is increased to 4x of the fully on value when IBAT falls below
approximately 350 mA to provide increased accuracy during termination. This will show a small rise in the SYS
voltage when the RDSON increases below approximately 350 mA.
When termination is enabled (TE bit is '1'), the bq24260/1/1M/2 monitors the charging current during the CV
mode. Once the charge current tapers down to the termination threshold, ITERM, and the battery voltage is above
the recharge threshold, the bq24260/1/1M/2 terminates charge, turns off the battery charging FET and enters
battery detection (see Battery Detection section for more details). The system output is regulated to the
VSYSREG(HI) and supports the full current available from the input. The battery supplement mode is available to
supply any SYS load that cannot be supported by the input source (see Dynamic Power-Path Management for
more details). The termination current level is programmable. To disable the charge current termination, the host
sets the charge termination bit (TE) of charge control register to 0. Refer to I2C section for details. When
termination is disabled, VBAT is continuously regulated to VBATREG. Termination is also disabled when any loop is
active other than CC or CV. This includes VINDPM, input current limit, or thermal regulation. Termination is also
disabled during TS warm/cool conditions and when the LOW_CHG bit is set to '1'.
A charge cycle is initiated when one of the following conditions is detected:
1. The battery voltage falls below the VBATREG-VRCH threshold.
2. IN Power-on reset (POR)
3. CE bit toggle or RESET bit is set (Host controlled)
4. CD terminal is toggled
9.4.5 Charge Time Optimizer
The CC to CV transition is enhanced in the bq24260/1/1M/2 architecture. The "knee" between CC and CV is
sharp. This enables the charger to remain in CC mode as long as possible before beginning to taper the charge
current (CV mode). This provides a decrease in charge time as compared to older topologies.
9.4.6 Battery Detection
When termination conditions are met, a battery detection cycle is started. During battery detection, IDETECT is
pulled from VBAT for tDETECT(SNK) to verify there is a battery. If the battery voltage remains above VDET(SINK) for the
full duration of tDETECT(SNK), a battery is determined to present and the IC enters “Charge Done”. If VBAT falls
below VDET(SINK), a “Battery Not Present” fault is signaled, the charge parameters are reset (VBATREG, ICHARGE and
ITERM) and battery detection continues. The next cycle of battery detection, the bq24260/1/1M/2 turns on IBATSHRT
for tDETECT(SRC). If VBAT rises to VDET(SRC1), the current source is turned off and a “No Battery” condition is
registered. In order to keep VBAT high enough to close the battery protector, the current source turns on if VBAT
falls to VDET(SRC2). The source cycle continues for tDETECT(SRC). After tDETECT(SRC), the battery detection continues
through another current sink cycle. Battery detection continues until charge is disabled, the
bq24260/1/1M/2enters hi-z mode or a battery is detected. Once a battery is detected, the fault status clears and
a new charge cycle begins. With no battery connected, the BAT output will transition from VRCH to PGND with a
high period of tDETECT(SRC) and a low period of tDETECT(SNK). See Figure 30 in Application Curves . Battery
detection is not performed when termination is disabled.
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Device Functional Modes (continued)
9.4.7 Battery Overvoltage Protection (BOVP)
If the battery is ever above the battery OVP threshold (VBOVP), the battery OVP circuit shuts the PWM converter
off and the battery FET is turned on to discharge the battery to safe operating levels. A battery OVP most
commonly occurs when the bq24260/1/1M/2 returns to DEFAULT mode after a watchdog timer expiration or
RESET bit written to '1'. In this condition, the VBATREG is reset and may be below the battery voltage. Other
conditions may be when the input is initially plugged in before I2C communication is established or TS WARM
conditions or when writing the VBATREG to less than the battery voltage. The battery OVP condition is cleared
when the battery voltage falls below the hysteresis of VBOVP either by the battery discharging or writing the
VBATREG to a higher value. When a battery OVP event exists for tDGL(BOVP), the bq24260/1/1M/2 turns the battery
FET and BGATE on, sends a single 128μs pulse on the STAT / INT outputs and the STATx and FAULT_x bits
are updated in the I2C. Once the BOVP fault is removed, the STATx bits are cleared and the device returns to
normal operation. The FAULT_x bits are not cleared until they are read in the I2C after the BOVP condition no
longer exists.
9.4.8 Dynamic Power-Path Management
The bq24260/1/1M/2 features a SYS output that powers the external system load connected to the battery. This
output is active whenever a valid source is connected to IN or BAT. When VSYS > VSYSREG(LO), the SYS output is
connected to VBAT. If the battery voltage falls to VMINSYS, VSYS is regulated to the VSYSREG(LO) threshold to
maintain the system output even with a deeply discharged or absent battery. In this mode, the SYS output
voltage is regulated by the buck converter and the battery FET is linearly regulated to regulate the charge current
into the battery. The current from the supply is shared between charging the battery and powering the system
load at SYS. The dynamic power-path management (DPPM) circuitry of the bq24260/1/1M/2 monitors the current
limits continuously and if the SYS voltage falls to the VMINSYS threshold, it adjusts charge current to maintain the
minimum system voltage and supply the load on SYS. If the charge current is reduced to zero and the load
increases further, the bq24260/1/1M/2 enters battery supplement mode. During supplement mode, the battery
FET is turned on and VBAT = VSYS while the battery supplements the system load.
2000mA
1800mA
ISYS
800mA
0mA
1500mA
IIN
~850mA
0mA
1A
IBAT
0mA
–200mA
3.6V
3.5V
DPPM loop active
VSYS
~3.1V
Supplement
Mode
Figure 11. Example DPPM Response (VSupply=5V, VBAT = 3.1V, 1.5A Input Current Limit)
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Device Functional Modes (continued)
9.4.9 Battery Discharge FET (BGATE)
The bq24260/1/1M/2 contains a MOSFET driver to drive an external discharge FET between the battery and the
system output. This external FET provides a low impedance path for supplying the system from the battery.
Connect BGATE to the gate of the external discharge P-channel MOSFET. BGATE is on (low) under the
following conditions:
1. No input supply connected.
2. HZ_MODE = 1
3. CD terminal = 1
9.4.10 DEFAULT Mode
DEFAULT mode is used when I2C communication is not available. DEFAULT mode is entered in the following
situations:
1. When the charger is enabled and VBAT 60°C). These temperatures correspond to the VCOLD, VCOOL, VWARM, and VHOT
thresholds in the EC table. Charging is suspended and timers are suspended when VTS < VHOT or VTS > VCOLD.
When VCOOL < VTS < VCOLD, the charging current is reduced to half of the programmed charge current. When
VHOT < VTS < VWARM, the battery regulation voltage is reduced by 140mV from the programmed regulation
threshold. The TS function is disabled by connecting TS directly to DRV (VTS > VTSOFF).
The TS function is voltage based for maximum flexibility. Connect a resistor divider from DRV to GND with TS
connected to the center tap to set the threshold. The connections are shown in Figure 14. The resistor values are
calculated using the following equations:
é 1
1 ù
VDRV ´ RCOLD ´ RHOT ´ ê
ú
VCOLD VHOT û
ë
RLO =
éV
ù
é V
ù
RHOT ´ ê DRV - 1ú - RCOLD ´ ê DRV - 1ú
V
V
ë HOT
û
ë COLD
û
(1)
VDRV
-1
VCOLD
RHI =
1
1
+
RLO RCOLD
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Device Functional Modes (continued)
where
•
•
VCOLD = 0.60 × VDRV
VHOT = 0.30 × VDRV
(2)
RLO ´ RHI ´ 0.564
RCOOL =
RLO - RLO ´ 0.564 - RHI ´ 0.564
RLO ´ RHI ´ 0.383
RWARM =
RLO - RLO ´ 0.383 - RHI ´ 0.383
(3)
where
•
•
RHOT is the NTC resistance at the hot temperature
RCOLD is the NTC resistance at cold temperature
(4)
The WARM and COOL thresholds are not independently programmable. The COOL and WARM NTC
resistances for a selected resistor divider are calculated using Equation 3 and Equation 4.
DISABLE
VBATREG
– 140 mV
1 x Charge/
0.5 x Charge
VDRV
TS COLD
TS COOL
+
+
TS WARM
+
VDRV
TS HOT
RHI
+
TS
TEMP
PACK+
bq2426x
RLO
PACK–
Figure 14. TS Circuit
9.4.17 Thermal Regulation and Protection
During the charging process, to prevent overheating in the chip, bq24260/1/1M/2 monitors the junction
temperature, TJ, of the die and reduces the input current once TJ reaches the thermal regulation threshold, TREG.
The input current is reduced to zero when the junction temperature increases about 10°C above TREG. Once the
input current is reduced to 0, the system current is reduced while the battery supplements the load to supply the
system. When the input current is completely reduced to 0 and TJ > 125°C, this is may cause a thermal
shutdown of the bq24260/1/1M/2 if the die temperature rises too high. At any state, if TJ exceeds TSHTDWN,
bq24260/1/1M/2 stops charging and disables the buck converter. During thermal shutdown mode, PWM is turned
off, all timers are suspended, a single 128-μs pulse is sent on the STAT and INT outputs, and the STATx and
FAULT_x bits of the status registers are updated in the I2C. The charge cycle resumes when TJ falls below
TSHTDWN by approximately 10°C.
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Device Functional Modes (continued)
9.4.18 Charge Status Outputs (STAT, INT)
The STAT/INT output is used to indicate operation conditions for bq24260/1/1M/2. STAT/INT is pulled low during
charging when EN_STAT bit in the control register is set to 1. When charge is complete or disabled, STAT/INT is
high impedance. When a fault occurs, a 128-µs pulse (interrupt) is sent out to notify the host. The status of
STAT/INT during different operation conditions is summarized in Table 1. STAT/INT drives an LED for visual
indication or can be connected to the logic rail for host communication. The EN_STAT bit in the control register is
used to enable/disable the charge status for STAT/INT. The interrupt pulses are unaffected by EN_STAT and will
always be shown.
Table 1. STAT Terminal Summary
CHARGE STATE
STAT and INT BEHAVIOR
Charge in progress and EN_STAT=1
Low
Other normal conditions
High-Impedance
Charge mode faults: Timer faults, sleep mode, VIN overvoltage, VIN < UVLO or Sleep
mode, BOVP, thermal shutdown, No Battery and Battery Temperature faults
128-µs pulse, then High Impedance
9.4.19 Boost Mode Operation
In HOST mode, when the operation mode bit (BOOST_EN) in the control register is set to 1, bq24260/1/1M/2
operates in boost mode and delivers 5 V to IN to supply USB OTG devices connected to the USB connector.
Boost operation can start with VBAT between 3.45 V to 4.5 V, and will maintain boost output until VBAT falls to
3.3 V. IN supplies up to 1 A to power these devices. It is not recommended to operate boost mode when the
battery voltage is less than 3.3 V. Proper operation is not ensured.
9.4.19.1 Chip Disable Input During Boost Mode (CD)
The bq24260/1/1M/2 contains a CD input that is used to disable the IC and place the bq24260/1/1M/2 into highimpedance mode. CD must be low to enter boost mode. Driving CD high during boost mode places the
bq24260/1/1M/2 into hi-z mode and resets the BOOST_EN bit in the I2C. When CD is high, the buck converter is
off, and the battery FET and BGATE are turned on. CD is internally pulled down to GND with a 100-kΩ resistor.
9.4.19.2 PWM Controller in Boost Mode
Similar to charge mode operation, in boost mode the IC switches at 1.5MHz to regulate the voltage at IN to 5 V.
The voltage control loop is internally compensated to provide enough phase margin for stable operation with the
full battery voltage range and up to 1 A.
In boost mode, the cycle-by-cycle current limit is set to 4 A or 2 A (depending on the I2C setting) to provide
protection against short-circuit conditions. If the cycle-by-cycle current limit is active for 8 ms, an overload
condition is detected and the device exits boost mode, and signals an overcurrent fault. Additionally, discharge
current limit (ILIM(DISCHG)) is active to protect the battery from overload. Synchronous operation and burst mode
are used to maximize efficiency over the full load range.
The bq24260/1/1M/2 will not enter boost mode unless the IN voltage is less than the UVLO. When the boost
function is enabled, the bq24260/1/1M/2 enters a linear mode to bring IN up to the battery voltage. Once VIN >
(VBAT – 1 V), the bq24260/1/1M/2 begins switching and regulates IN up to 5 V. If VIN does not rise to within 1 V of
VBAT within 8 ms, an overcurrent event is detected and boost mode is exited and a boost mode overcurrent event
is announced, the BOOST_EN bit is reset to 0 and the STAT_x and FAULT_x bits in the Status/ Control register
are updated.
9.4.19.3 Burst Mode During Light Load
In boost mode, the IC operates using burst mode to improve light load efficiency and reduce power loss. During
boost mode, the PWM converter is turned off when the device reaches minimum duty cycle and the output
voltage rises to VBURST(ENT) threshold. This corresponds to approximately a 75-mA inductor current. The
converter then restarts when VIN falls to VBURST(EXT). See Figure 38 in the Application Curves for an example
waveform.
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9.4.19.4 Watchdog Timer in Boost Mode
During boost mode, the watchdog timer is active. The watchdog timer works the same as in charge mode. Write
a 1 to the TMR_RST reset bit in the control register. If the watchdog timer expires, the IC resets the EN_BOOST
bit to 0, signals the fault pulse on the STAT and INT terminals. The FAULT_x bits read "Low Supply Fault" as
this is a higher priority fault than the WD timer.
9.4.19.5 STAT/ INT During Boost Mode
During boost mode, the STAT and INT outputs are high impedance. Under fault conditions, a 128-µs pulse is
sent out to notify the host of the error condition.
9.4.19.6 Protection in Boost Mode
9.4.19.6.1 Output Overvoltage Protection
The bq24260/1/1M/2 contains integrated overvoltage protection on the IN terminal. During boost mode, if an
overvoltage condition is detected (VIN > VBOOSTOVP), after deglitch tDGL(BOOST_OVP), the IC turns off the PWM
converter, resets EN_BOOST bit to 0, sets fault status bits and sends out a fault pulse on STAT and INT. The
converter does not restart when VIN drops to the normal level until the EN_BOOST bit is reset to 1.
9.4.19.6.2 Output Overcurrent Protection
The bq24260/1/1M/2 contains overcurrent protection to prevent the device and battery damage when IN is
overloaded. When an overcurrent condition occurs, the cycle-by-cycle current limit limits the current from the
battery to the load. If the overload condition lasts for 8 ms, the overload fault is detected. When an overload
condition is detected, the bq24260/1/1M/2 turns off the PWM converter, resets EN_BOOST bit to 0, sets the fault
status bits and sends out the fault pulse on STAT and INT. The boost operation starts only after the fault is
cleared and the EN_BOOST bit is reset to 1 using the I2C.
9.4.19.6.3 Battery Voltage Protection
During boost mode, when the battery voltage is below the minimum battery voltage threshold, VBATUVLO, the IC
turns off the PWM converter, resets EN_BOOST bit to 0, sets fault status bits and sends out a fault pulse on
STAT and INT. Once the battery voltage returns to the acceptable level, the boost starts only after the
EN_BOOST bit is set to 1. Proper operation below 3.3 V down to the VBATUVLOis not specified.
9.5 Programming
9.5.1 Serial Interface Description
The bq24260 uses an I2C compatible interface to program charge parameters. I2C is a 2-wire serial interface
developed by NXP (formerly Philips Semiconductor, see I2C-Bus Specification, Version 5, October 2012). The
bus consists of a data line (SDA) and a clock line (SCL) with pullup structures. When the bus is idle, both SDA
and SCL lines are pulled high. All the I2C compatible devices connect to the I2C bus through open-drain I/O
terminals, SDA and SCL. A master device, usually a microcontroller or a digital signal processor, controls the
bus. The master is responsible for generating the SCL signal and device addresses. The master also generates
specific conditions that indicate the START and STOP of data transfer. A slave device receives and/or transmits
data on the bus under control of the master device.
The bq24260/1/1M/2 device works as a slave and supports the following data transfer modes, as defined in the
I2C Bus™ Specification: standard mode (100 kbps) and fast mode (400 kbps). The interface adds flexibility to
the battery charge solution, enabling most functions to be programmed to new values depending on the
instantaneous application requirements. The I2C circuitry is powered from IN when a supply is connected. If the
IN supply is not connected, the I2C circuitry is powered from the battery through BAT. The battery voltage must
stay above VBATUVLO with no input connected in order to maintain proper operation.
The data transfer protocol for standard and fast modes is exactly the same; therefore, they are referred to as the
F/S-mode in this document. The bq24260/1/1M/2 device only supports 7-bit addressing. The device 7-bit address
is defined as ‘1101011’ (0x6Bh).
To avoid I2C hang-ups, a timer (tI2CRESET) runs during I2C transactions. If the transaction takes longer than
tI2CRESET, any additional commands are ignored and the I2C engine is reset. The timeout is reset with START and
repeated START conditions and stops when a valid STOP condition is sent.
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Programming (continued)
9.5.2 F/S Mode Protocol
The master initiates data transfer by generating a start condition. The start condition is when a high-to-low
transition occurs on the SDA line while SCL is high, as shown in Figure 15. All I2C -compatible devices should
recognize a start condition.
DATA
CLK
S
P
START Condition
STOP Condition
Figure 15. START and STOP Condition
The master then generates the SCL pulses, and transmits the 8-bit address and the read/write direction bit R/W
on the SDA line. During all transmissions, the master ensures that data is valid. A valid data condition requires
the SDA line to be stable during the entire high period of the clock pulse (see Figure 16). All devices recognize
the address sent by the master and compare it to their internal fixed addresses. Only the slave device with a
matching address generates an acknowledge (see Figure 17) by pulling the SDA line low during the entire high
period of the ninth SCL cycle. Upon detecting this acknowledge, the master knows that communication link with a
slave has been established.
DATA
CLK
Data Line
Stable;
Data Valid
Change
of Data
Allowed
Figure 16. Bit Transfer on the Serial Interface
The master generates further SCL cycles to either transmit data to the slave (R/W bit 0) or receive data from the
slave (R/W bit 1. In either case, the receiver needs to acknowledge the data sent by the transmitter. So an
acknowledge signal can either be generated by the master or by the slave, depending on which one is the
receiver. The 9-bit valid data sequences consisting of 8-bit data and 1-bit acknowledge can continue as long as
necessary. To signal the end of the data transfer, the master generates a stop condition by pulling the SDA line
from low to high while the SCL line is high (see Figure 15). This releases the bus and stops the communication
link with the addressed slave. All I2C compatible devices must recognize the stop condition. Upon the receipt of
a stop condition, all devices know that the bus is released, and wait for a start condition followed by a matching
address. If a transaction is terminated prematurely, the master needs to send a STOP condition to prevent the
slave I2C logic from remaining in a incorrect state. Attempting to read data from register addresses not listed in
this section will result in 0xFFh being read out.
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Programming (continued)
Data Output
by Transmitter
Not Acknowledge
Data Output
by Receiver
Acknowledge
SCL From
Master
1
9
8
2
Clock Pulse for
Acknowledgement
START
Condition
Figure 17. Acknowledge on the I2C Bus
Recognize START or
REPEATED START
Condition
Recognize STOP or
REPEATED START
Condition
Generate ACKNOWLEDGE
Signal
P
SDA
Acknowledgement
Signal From Slave
MSB
Sr
Address
R/W
SCL
S
or
Sr
ACK
ACK
Sr
or
P
Figure 18. Bus Protocol
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9.6 Register Maps
9.6.1 Status/Control Register (READ/WRITE)
Memory location: 00, Reset state: 00xx 0xxx
Figure 19. Status/Control Register
B7(MSB)
0
R/W
B6
0
R/W
B5
X
R
B4
X
R
B3
0
R/W
B2
X
R
B1
X
R
B0(LSB)
X
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 2. Status/Control Register Field Descriptions
BIT
FIELD
(1) (2)
TYPE
DESCRIPTION
B7(MSB)
TMR_RST
R/W
Write: TMR_RST function, write 1 to reset the watchdog timer (auto clear)
Read: Always 0
(bq24260/1/1M only)
B6
EN_BOOST
R/W
0-Charger Mode
1-Boost Mode (default 0)
B5
STAT_1
R
B4
STAT_0
R
B3
EN_SHIPMODE
R/W
B2
FAULT_2
R
B1
FAULT_1
R
B0(LSB)
FAULT_0
R
(1)
(2)
00-Ready
01-Charge in progress
10-Charge done
11-Fault
0-Normal Operation
1-Ship Mode Enabled (default 0)
000-Normal
001-VIN > VOVP or Boost Mode OVP
010- Low Supply connected (VIN TS temp > TCOLD (Charge current reduced by half)
11 – TWARM < TS temp < THOT (Charge voltage reduced by 100mV)
0 – 4.2 V
1 – 10.1 V
(Default 0)
BOOST_ILIM Bit (Boost current limit setting)
The BOOST_ILIM bit programs the cycle by cycle current limit threshold for boost operation. The 1-A
setting sets the low side cycle by cycle current limit to 4 A (typical). This ensures that at least 1 A can be
supplied from the boost converter over the entire battery range. The 500-mA setting sets the current limit
to 2 A (typ) to ensure at least 500 mA available from the boost converter. See Output Overcurrent
Protection for more details.
VINDPM_OFF Bit (VINDPM offset setting)
The VINDPM_OFF bit programs the offset for the VINDPM function. The 4.2-V setting is intended to work
with a standard 5-V output adapter. The 10.1-V setting supports 12-V adapters and the 12-V output for
the new USB Power Delivery specification (USB PD).
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The bq24260EVM-079 evaluation module (EVM) is a complete charger module for evaluating the bq24260. The
application curves were taken using the bq24260EVM-079. See Related Documentation for details.
The EVM supports both typical application circuits shown below through board options. Figure 28 shows the
bq24261 using PSEL for the input current limit selection. Figure 28 shows the bq24260 using D+/D– for the input
current limit selection. Figure 28 also shows the addition of an external battery FET. This external FET can be
used with the bq24260/1/1M/2 to provide lower loss discharge path from the battery, and is controlled by the
BGATE pin.
10.2 Typical Application
1.5 µH
PMID
SW
10 µF
1 µF
System
Load
0.033 µF
BOOT
SYS
IN
VBUS
D+
10 µF
DGND
Optional FET
4.7 µF
BGATE
DRV
BAT
DRV
2.2 µF
DRV
1 µF
PGND
STAT
1.5 kŸ
5.62 kŸ
PACK+
TS
TEMP
VI/O
(1.8 V)
12.4 kŸ
PSEL (bq24261)
USB PHY
D+
(bq24260)
D-
PACK-
1.5 kŸ
HOST
INT
GPIO
SDA
SDA
SCL
SCL
CD
GPIO
Figure 28. bq24260/1 Typical Application Circuit
38
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bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Typical Application (continued)
10.2.1 Design Requirements
For this example, use the parameters listed in Table 9.
Table 9. Design Requirements
DESIGN PARAMATER
EXAMPLE VALUE
Input Voltage Range
4.75 V to 5.25 V nominal, withstand 28 V
Input Current Limit
2500 mA
Input DPM Threshold
4.25 V
Fast Charge Current
3000 mA
Battery Charge Voltage
4.2 V
Termination Current
50 mA
10.2.2 Detailed Design Procedure
Following the guidance in the next section, the capacitors on IN, PMID, SYS, BAT and BOOT are the minimum
recommended values of 4.7 µF, 1 µF, 10 µF, 1 µF, and 0.033 µF, respectively. It is assumed that at least 10 µF
of additional capacitance is on the SYS rail. To minimize footprint, a 1.5-µH inductor with at least 3.5-A saturation
current is selected. The optional FET, with gate connected at BGATE, only turns on in high-impedance mode (for
example, no input power/battery only) to reduce the losses across the internal battery FET of the IC . See the
bq24261EVM for exact part numbers. Pullup resistors for STAT and INT of 1.5 kΩ were selected per the current
requirements of the LED. The values for the resistor divider on TS were found using Equation 1 and Equation 2,
where RHOT is the resistance of the NTC thermistor at the hot temperature, RCOLD is the resistance of the
thermistor at cold temperature, VDRV = 5 V, VHOT = 0.3 × VDRV and VCOLD = 0.6 x VDRV.
Many parameters configurable by the I2C registers can be changed by using the EVM software.
10.2.2.1 Output Inductor and Capacitor Selection Guidelines
When selecting an inductor, several attributes must be examined to find the right part for the application. First,
the inductance value should be selected. The bq2426x is designed to work with 1.5-µH to 2.2-µH inductors. The
chosen value will have an effect on efficiency and package size. Due to the smaller current ripple, some
efficiency gain is reached using the 2.2-µH inductor. However, due to the physical size of the inductor, this option
may not be viable. The 1.5-µH inductor provides a good tradeoff between size and efficiency.
Once the inductance has been selected, the peak current must be calculated in order to choose the current
rating of the inductor. Use Equation 5 to calculate the peak current.
æ %
ö
IPEAK = ILOAD(MAX) ´ ç 1 + RIPPPLE ÷
2
è
ø
(5)
The inductor selected must have a saturation current rating greater than or equal to the calculated IPEAK. Due to
the high currents possible with the bq24260/1/1M/2, a thermal analysis must also be done for the inductor. Many
inductors have 40°C temperature rise rating. This is the DC current that will cause a 40°C temperature rise
above the ambient temperature in the inductor. For this analysis, the typical load current may be used adjusted
for the duty cycle of the load transients. For example, if the application requires a 1.5-A DC load with peaks at
2.5 A 20% of the time, a Δ40°C temperature rise current must be greater than 1.7 A:
ITEMPRISE = ILOAD + D × (IPEAK – ILOAD) = 1.5 A + 0.2 × (2.5 A – 1.5 A) = 1.7 A
(6)
The internal loop compensation of the bq24260/1/1M/2 is designed to be stable with 10 µF to 150 µF of local
capacitance but requires at least 20 µF total capacitance on the SYS rail (10 µF local + ≥ 10 µF distributed). The
capacitance on the SYS rail can be higher than 150 µF if distributed amongst the rail. To reduce the output
voltage ripple, a ceramic capacitor with the capacitance between 10 µF and 47 µF is recommended for local
bypass to SYS. If greater than 100 µF effective capacitance is on the SYS rail, place at least 10-µF bypass on
the BAT terminal. Pay special attention to the DC bias characteristics of ceramic capacitors. For small case
sizes, the capacitance can be derated as high as 70% at workable voltages. All capacitances specified in this
data sheet are effective capacitance, not capacitor value.
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39
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bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
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10.2.3 Application Curves
40
Figure 29. Start-up With No Battery
Figure 30. Battery Detection
Figure 31. Battery Removal
Figure 32. Default Start-up - bq24260
(D+/D– Shorted)
Figure 33. Default Start-up - bq24260
(D+/D– Not Shorted)
Figure 34. VSYS Transient Without Supplement Mode
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bq24260, bq24261, bq24261M, bq24262
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
Figure 35. VSYS Transient With Supplement Mode
Figure 36. VSYS Transient With Supplement Mode
Figure 37. Boost Start-up No Load
Figure 38. Boost Burst Mode During Light Load
Figure 39. Boost Start-up 1-A Load
Figure 40. Boost Transient Response
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41
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bq24260, bq24261, bq24261M, bq24262
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
www.ti.com
VBAT = 3.6 V
VBATREG = 4.2 V
ICHG = 2 A
ILIM = 0.5 A
ISYS = 0A
VDPM = 4.36 V
Figure 41. Input OVP Event With INT
42
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Figure 42. Start-up, 4.2 V
Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
11 Power Supply Recommendations
11.1 Requirements for SYS Output
In order to provide an output voltage on SYS, the bq2426x requires either a power supply between 4.2 V and 6 V
input on all versions, 4.2 V and 6.5 V for IN input on bq24262, 4.2 V and 10.5 V on bq24260, and 4.2 and 14 V
on bq24261/M with at least 100 mA current rating connected to IN; or, a single-cell Li-Ion battery with voltage >
VBATUVLO connected to BAT. The source current rating must be at least 2.5 A for the buck converter of the
charger to provide maximum output power to SYS.
11.2 Requirements for Charging
In order for charging to occur the source voltage measured at the IN terminals of the IC, factoring in cable/trace
losses from the source, must be greater than the VINDPM threshold, but less than the maximum values shown
above. The current rating of the source must be higher than the buck converter needs to provide the load on
SYS. For charging at a desired charge current of ICHRG, VIN × IIN × η > VSYS × (ISYS+ ICHRG) where η is the
efficiency estimate from Figure 2 or Figure 3 and VSYS = VBAT when VBAT charges above VMINSYS. The
charger limits IIN to the current limit setting of that input. With ISYS = 0 A, the charger consumes maximum
power at the end of CC mode, when the voltage at the BAT terminal is near VBATREG but ICHRG has not
started to taper off toward ITERM.
12 Layout
12.1 Layout Guidelines
The following provides some guidelines:
• Place 1-µF input capacitor as close to PMID terminal and PGND terminal as possible to make high-frequency
current loop area as small as possible.
• Connect the GND of the PMID and IN capacitors as close as possible.
• Place 4.7-µF input capacitor as close to IN terminal and PGND terminal as possible to make high-frequency
current loop area as small as possible.
• The local bypass capacitor from SYS to GND should be connected between the SYS terminal and PGND of
the IC. The intent is to minimize the current path loop area from the SW terminal through the LC filter and
back to the PGND terminal.
• Place all decoupling capacitors close to their respective IC terminal and as close as to PGND as possible. Do
not place components such that routing interrupts power stage currents. All small control signals should be
routed away from the high current paths.
• The PCB should have a ground plane (return) connected directly to the return of all components through vias.
Two vias per capacitor for power-stage capacitors and one via per capacitor for small-signal components. TI
also recommends putting vias inside the PGND pads for the IC, if possible. A star ground design approach is
typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noisecoupling and ground-bounce issues. A single ground plane for this design gives good results.
• The high-current charge paths into IN, BAT, SYS and from the SW terminals must be sized appropriately for
the maximum charge current in order to avoid voltage drops in these traces. The PGND terminals should be
connected to the ground plane to return current through the internal low-side FET.
• For high-current applications, the balls for the power paths should be connected to as much copper in the
board as possible. This allows better thermal performance as the board pulls heat away from the IC.
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
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12.2 Layout Example
It is important to pay special attention to the PCB layout. Figure 43 provides a sample layout for the high current
paths of the bq2426xYFF. Figure 44 provides a sample layout for the high current paths of the bq2426xRGE.
PMID and IN
Cap Gnds
close together
PMID
PGND
SW
IN cap close
to IN pin
BOOT
Thermal vias
connect to
PGND
SYS cap
close to
SYS pins
BAT cap close
to BAT pins
Figure 43. Recommended bq2426x PCB Layout for WCSP Package
sp
PGND
SW
PMID
PMID and IN
Cap Gnds
BOOT
Close together
SYS Cap
IN Cap
Close to
Close to
SYS Pins
IN Pin
BAT Cap
Thermal
Close to
Vias connect
BAT Pins
To GND
Figure 44. Recommended bq2426x PCB Layout for QFN Package
44
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bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
User's Guide for WCSP Packaged bq24260, bq24261 and bq24262A 3-A Battery Charger Evaluation Module,
SLUUAB0.
User's Guide for QFN Packaged bq24260, bq24261, and bq24262 3-A Battery Charger Evaluation Module,
SLUUAV8.
3A, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger Evaluation Module,
http://www.ti.com/tool/bq24261evm-611.
Host-Controlled Single-Input, Single Cell
http://www.ti.com/tool/bq24261evm-079.
Switchmode
Li-Ion
Battery
Charger
Evaluation
Module,
EVM Software, SLUC519
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 10. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
bq24260
Click here
Click here
Click here
Click here
Click here
bq24261
Click here
Click here
Click here
Click here
Click here
bq24262
Click here
Click here
Click here
Click here
Click here
bq24261M
Click here
Click here
Click here
Click here
Click here
13.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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SLUSBU4E – DECEMBER 2013 – REVISED DECEMBER 2015
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
46
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
PACKAGE OPTION ADDENDUM
www.ti.com
30-Oct-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
BQ24260RGER
NRND
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24260
BQ24260RGET
NRND
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24260
BQ24260YFFR
NRND
DSBGA
YFF
36
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24260
BQ24260YFFT
NRND
DSBGA
YFF
36
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24260
BQ24261MRGER
NRND
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24261M
BQ24261MRGET
NRND
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24261M
BQ24261MYFFR
NRND
DSBGA
YFF
36
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24261M
BQ24261MYFFT
NRND
DSBGA
YFF
36
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24261M
BQ24261RGER
NRND
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24261
BQ24261RGET
NRND
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24261
BQ24261YFFR
NRND
DSBGA
YFF
36
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24261
BQ24261YFFT
NRND
DSBGA
YFF
36
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24261
BQ24262RGER
NRND
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24262
BQ24262RGET
NRND
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ
24262
BQ24262YFFR
NRND
DSBGA
YFF
36
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24262
BQ24262YFFT
NRND
DSBGA
YFF
36
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BQ24262
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
30-Oct-2018
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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