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BQ24392-Q1
SLIS160D – AUGUST 2014 – REVISED MARCH 2017
BQ24392-Q1 Dual SPST USB 2.0 High Speed Switch With USB Battery Charging
Specification Revision 1.2 Detection
1 Features
3 Description
•
•
The BQ24392-Q1 is a dual single-pole single-throw
(SPST) USB 2.0 high-speed isolation switch with
charger detection capabilities for use with micro and
mini-USB ports. This USB switch allows mobile
phones, tablets, and other battery operated
electronics to be charged from different adapters with
minimal system software. The device’s charger
detection circuitry can support USB Battery Charging
Specification version 1.2 (BCv1.2) compliant,
Apple™, TomTom™, and other non-standard
chargers.
1
•
•
•
•
•
•
•
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM ESD Classification Level 2
– Device CDM ESD Classification Level C4B
USB 2.0 High Speed Switch
Detects USB Battery Charging Specification
Version 1.2 (BCv1.2) Compliant Chargers
Compatible Accessories
– Dedicated Charging Port
– Standard Downstream Port
– Charging Downstream Port
Non-Standard Chargers
– Apple™ Charger
– TomTom™ Charger
– USB Chargers Not Compliant With Battery
Charging Specification Version 1.2 (BCv1.2)
–2-V to 28-V VBUS Voltage Range
ESD Performance Tested per JESD 22
– 4000-V Human-Body Model
– 1500-V Charged-Device Model (C101)
ESD Performance DP_CON/DM_CON to GND
– ±8-kV Contact Discharge (IEC 61000-4-2)
The BQ24392-Q1 device is powered through VBUS
when a charger is attached to the micro or mini-USB
port and has a 28 V tolerance to avoid the need for
external protection.
Device Information(1)
PART NUMBER
BQ24392-Q1
PACKAGE
UQFN (10)
BODY SIZE (NOM)
2.05 mm × 1.55 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
480-Mbps USB 2.0 Eye Diagram With USB Switch
2 Applications
•
•
Rear Seat Entertainment
GPS Systems
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ24392-Q1
SLIS160D – AUGUST 2014 – REVISED MARCH 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 8
7.4 Device Functional Modes.......................................... 9
8
Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application ................................................. 11
9 Power Supply Recommendations...................... 12
10 Layout................................................................... 13
10.1 Layout Guidelines ................................................. 13
10.2 Layout Example .................................................... 14
11 Device and Documentation Support ................. 15
11.1
11.2
11.3
11.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
12 Mechanical, Packaging, and Orderable
Information ........................................................... 15
4 Revision History
Changes from Revision C (January 2016) to Revision D
Page
•
Changed From: BQ24932-Q1 To: BQ24392-Q1 in the Description ...................................................................................... 1
•
Moved the Storage temperature range to the Absolute Maximum Ratings table. ................................................................. 4
•
Changed Handling Ratings To: ESD Ratings......................................................................................................................... 4
•
Changed From: BQ24932-Q1 To: BQ24392-Q1 in the Overview ......................................................................................... 7
•
Changed title From: Using the BQ24932 GPIOs To: Using the BQ24392-Q1 GPIOs......................................................... 10
Changes from Revision B (January 2015) to Revision C
•
Changed diode direction from left facing to right facing in Application Schematic. ............................................................. 11
Changes from Revision A (September 2014) to Revision B
•
2
Page
Updated Features .................................................................................................................................................................. 1
Changes from Original (August 2014) to Revision A
•
Page
Page
Initial full version release of document ................................................................................................................................... 1
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BQ24392-Q1
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SLIS160D – AUGUST 2014 – REVISED MARCH 2017
5 Pin Configuration and Functions
10
CHG_DET
RSE Package
10-Pin (UQFN)
(Top View)
1
9
VBUS
DM_HOST
2
8
DM_CON
DP_HOST
3
7
DP_CON
CHG_AL_N
4
6
GND
GOOD_BAT
5
SW_OPEN
Not to scale
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
SW_OPEN
O
USB switch status indicator
Open-drain output. 10 kΩ external pull-up resistor required
SW_OPEN = LOW indicates when switch is connected
SW_OPEN = HIGH-Z indicates when switch is not connected
2
DM_HOST
I/O
D– signal to transceiver
3
DP_HOST
I/O
D+ signal to transceiver
O
Charging status indicator
Open-drain output. 10 kΩ external pull-up resistor required.
CHG_AL_N = LOW indicates when charging allowed
CHG_AL_N = HIGH-Z indicates when charging is not allowed
I
Battery status indication from system
This pin indicates the status of the battery
GOOD_BAT = LOW indicates a dead battery
GOOD_BAT = HIGH indicates a good battery
–
Not internally connected
4
CHG_AL_N
5
GOOD_BAT
6
GND
7
DP_CON
I/O
D+ signal from USB connector
8
DM_CON
I/O
D– signal from USB connector
9
VBUS
I
Supply pin from USB connector
O
Charger detection indicator
Push-pull output to the system
CHG_DET = LOW indicates when a charger is not detected
CHG_DET = HIGH indicates when a charger detected
10
CHG_DET
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6 Specifications
6.1 Absolute Maximum Ratings
over –40℃ to 125℃ temperature range (unless otherwise noted)
VBUS
CHG_AL_N
Input Voltage
Tstg
MIN
MAX
–2
28
–2
28
DM_HOST
–0.3
7
DP_HOST
–0.3
7
GOOD_BAT
–0.3
7
DP_CON
–0.3
7
DM_CON
–0.3
7
CHG_DET
–0.3
7
Storage temperature range
–65
150
UNIT
V
°C
6.2 ESD Ratings
VALUE
Human body model (HBM), per AEC Q100-002
V(ESD)
(1)
Electrostatic discharge
Charged device model (CDM), per AEC
Q100-011
(1)
UNIT
±4000
Corner pins (DP_CON and
DM_CON to GND)
±8000
Other pins
±1500
V
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
MIN
MAX
UNIT
4.75
5.25
V
GOOD_BAT
0
VBUS
DM_HOST
0
3.6
DP_HOST
0
3.6
DM_CON
0
3.6
DP_CON
0
3.6
VBUS
6.4 Thermal Information
BQ24392-Q1
THERMAL METRIC
(1)
RSE
UNIT
10 PINS
RθJA
Junction-to-ambient thermal resistance
167.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
78.8
°C/W
RθJB
Junction-to-board thermal resistance
95.8
°C/W
ψJT
Junction-to-top characterization parameter
4.7
°C/W
ψJB
Junction-to-board characterization parameter
95.9
v
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
VBUS = 4.5 V to 5.5 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
VBUS_VALI
TEST CONDITIONS
VBUS Valid threshold
MIN
Rising VBUS threshold
TYP
MAX
3.5
UNIT
V
D
VOH
CHG_DET
VOL
CHG_DET,
CHG_DET, SW_OPEN,
SW_OPEN,
CHG_AL_N
CHG_AL_N
VIH
High-level input voltage
VIL
Low-level input voltage
RPD
Internal pull-down
resistance
tDBP
Dead battery provision timer
VUSBIO
Analog signal range
RON
ON-state resistance
RON(flat)
ON-state resistance
flatness
ΔRON
ON- state resistance
match between
channels
ICC-SW
CHG_DET
(OFF)
IUSBI/O
(ON)
IUSBI/O
IOL = 2 mA
0.4
V
0.5
950
32
0
DM_CON,
DP_CON,
DM_HOST,
DP_HOST
VDM_HOST and VDP_HOST = 0 to 3.6 V, IDP_CON
and IDM_CON = –2 mA
V
kΩ
45
Mins
3.6
V
6
8
Ω
1.1
2.4
Ω
VDM_HOST and VDP_HOST = 0.4 V, IDP_CON and
IDM_CON = –2 mA
0.5
VVBUS = 5 V, USB Switch ON;
VIH(GOOD_BAT)= 1.1 V
250
350
µA
VVBUS = 5 V, USB Switch ON;
VIH(GOOD_BAT) = 2.5 V
80
115
µA
Current consumption with USB switch off VVBUS = 5 V; USB Switch OFF
45
75
µA
Output port leakage current with USB
switch on
VI = OPEN, VO = 0.3 V or 2.7 V, Switch ON
50
90
nA
Leakage current with USB switch off
VI = 0.3 V, VO = 2.7 V or VI = 2.7 V, VO = 0.3 V,
Switch OFF
45
75
nA
Current consumption
Capacitance with USB
switch off
DP_HOST,
DM_HOST
CO(OFF)
Capacitance with USB
switch off
DP_CON,
DM_CON
CI(ON)
Capacitance with USB
switch on
DP_HOST,
DM_HOST
CO(ON)
Capacitance with USB
switch on
DP_CON,
DM_CON
BW
Bandwidth
RL = 50 Ω, Switch ON
OISO
Isolation with USB switch off
f = 240 MHz, RL = 50 Ω, Switch OFF
XTALK
Crosstalk
f = 240 MHz, RL = 50 Ω
(1)
V
V
GOOD_BAT
(OFF)
CI(OFF)
3.5
1.1
(ON)
ICC-SW
IOH = –2 mA
VBUS (1
)
Ω
2
pF
10
pF
11
pF
11
pF
1
GHz
DC bias = 0 V or 3.6 V, f = 10 MHz, Switch OFF
DC bias = 0 V or 3.6 V, f = 10 MHz, Switch ON
–26
dB
–30.5
dB
CHG_DET max value will be clamped at 7 V when VVBUS > 7 V
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6.6 Typical Characteristics
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Figure 1. 480-Mbps USB 2.0 Eye Diagram with No Device
6
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Figure 2. 480-Mbps USB 2.0 Eye Diagram with USB Switch
Copyright © 2014–2017, Texas Instruments Incorporated
BQ24392-Q1
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SLIS160D – AUGUST 2014 – REVISED MARCH 2017
7 Detailed Description
7.1 Overview
The BQ24392-Q1 is a USB 2.0 high-speed isolation switch with charger detection capabilities for use with micro
and mini-USB ports. Upon plugin of a Battery Charging Specification 1.2 (BCv1.2) compliant, Apple™,
TomTom™, or other USB charger into a micro or mini-USB connector, the device will automatically detect the
charger and operate the USB 2.0 high-speed isolation switch.
The BQ24392-Q1 device is powered through VBUS when a charger is attached to the micro or mini-USB port
and has a 28-V tolerance to avoid the need for external protection.
7.2 Functional Block Diagram
BQ24392
Supply
Detect
VBUS
DM_CON
USB
HOST
DM_HOST
DP_HOST
DP_CON
Switch
Matrix
Matrix
Micro
USB
ID_CON
GND
SYSTEM
&
CHARGER
GOOD_BAT
SW_OPEN
Logic
DP/DM
Comparator
CHG_AL_N
CHG_DET
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7.3 Feature Description
7.3.1 Charger Detection
POWERUP
VVBUS >VVBUS_UV
IDLE
GOOD_BAT = 1
VVBUS >VVBUS(valid)
DATA CONTACT DETECTION
600-ms Timeout Feature
USB BCv 1.2 compliant
Not USB BCv 1.2 compliant
CHECK VOLTAGE LEVEL ON
DP_CON & DM_CON
PRIMARY DETECTION
SDP charger
Not SDP charger
SECONDARY DETECTION
Standard
Downstream Port
(SDP)
GOOD_BAT=1
USB
SWITCH ON
GOOD_BAT=0
USB
SWITCH OFF
Dedicated
Charging Port
(DCP)
Apple
Charger
TomTom
Charger
No Charger
Charging
Downstream Port
(CDP)
GOOD_BAT=1 GOOD_BAT=0
USB
SWITCH ON
USB
SWITCH OFF
GOOD_BAT=0
Start Dead
Battery Provision
(DBP) Timer
32 Mins Expire
Disable charging
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Figure 3. Logic Tree
8
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Feature Description (continued)
When a micro or mini-USB accessory is inserted into the connector and once VVBUS is greater than VVBUS_VALID
threshold, the BQ24392-Q1 will enter into the Data Contact Detection (DCD) state which includes a 600-ms
timeout feature that is prescribed in the USB Battery Charging Specification version 1.2 (BCv1.2). If the micro or
mini-USB accessory is determined to be USB BCv1.2 compliant, a 130-ms debounce period will initiate and the
BQ24392-Q1 will proceed to its primary detection and then secondary detection states to determine if a
Dedicated Charging Port (DCP), Standard Downstream Port (SDP), or Charging Downstream Port (CDP) is
attached to the USB-port. The minimum detection time for a DCP, SDP, and CDP is 130 ms, but can be as long
as 600 ms due to the slow plug in effect.
If the GOOD_BAT pin is high, the USB 2.0 switches are automatically closed to enable data transfer after the
device detects a Standard Downstream Port (SDP) or Charging Downstream Port (CDP) was connected.
If Data Contact Detection (DCD) fails, the BQ24392-Q1 proceeds to detect whether an Apple or TomTom
charger was inserted by checking the voltage level on DP_CON and DM_CON. Thus, for Apple and TomTom
chargers, detection time typically takes ~600 ms.
The 3 output pins CHG_AL_N, CHG_DET, and SW_OPEN change their status at the end of detection. Table 1 is
the detection table with the GPIO status for each type of supported charger. More information on how to use the
GPIOs is available in Using the BQ24392-Q1 GPIOs .
Table 1. Detection Table
Device Type
Standard
Downstream
Port
VBUS
> 3.5 V
DP_CON
(D+)
Pull-down R to GND
DM_CON
(D–)
GOOD_BAT
(Input)
CHG_AL_N
(Output)
CHG_DET
(Output)
SW_OPEN
(Output)
Switch Status
Charge Current
HIGH
LOW
LOW
LOW
Connected
Charge with
100mA/ Change
the input current
based on
enumeration
LOW
LOW
LOW
High-Z
Not Connected
Charge with 100
mA
HIGH
LOW
HIGH
LOW
Connected
Charge with full
current
LOW
LOW
HIGH
High-Z
Not Connected
Charge with 100
mA
Pull-down R to
GND
Charging
Downstream
Port
> 3.5 V
Dedicated
Charging Port
> 3.5 V
Short to D–
Short to D+
X
LOW
HIGH
High-Z
Not Connected
Charge with full
current
Apple Charger
> 3.5 V
2.0 V < VDP_CON < 2.8
V
2.0 V < VDM_CON <
2.8 V
X
LOW
HIGH
High-Z
Not Connected
Charge with full
current
TomTom
Charger
> 3.5 V
2.0 V < VDP_CON < 3.1
V
2.0 V < VDM_CON <
3.1 V
X
LOW
HIGH
High-Z
Not Connected
Charge with full
current
PS/2 Charger
> 3.5 V
Pull-up R to VVBUS
Pull-up R to VVBUS
X
LOW
LOW
High-Z
Not Connected
Charge with 100
mA
Non-compliant
USB Charger
> 3.5 V
Open
Open
X
LOW
LOW
High-Z
Not Connected
Charge with 100
mA
Any Device
< 3.5 V
Open
Open
X
High-Z
LOW
High-Z
Not Connected
No Charge
Any Device
DBP
Timer Expired
> 3.5 V
X
X
LOW
High-Z
LOW
High-Z
Not Connected
No Charge
Pull-down R to GND
VDM_SRC
If a charger has been detected and the GOOD_BAT pin is low, a Dead Battery Provision (DBP) timer is initiated.
If the GOOD_BAT continues to be low for 30 minutes (maximum of 45 minutes), charging is disabled and
CHG_AL_N goes into the High-Z state to indicate this. Toggling GOOD_BAT high after the DBP timer expires restarts detection and the DBP timer.
7.4 Device Functional Modes
The BQ24392-Q1 has three functional modes:
1. Nothing inserted
2. Accessory inserted and detection running
3. Accessory inserted and detected
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Using the BQ24392-Q1 GPIOs
8.1.1.1 CHG_AL and CHG_DET
The BQ24392-Q1 has 2 charger indicators, CHG_AL_N and CHG_DET, that the host can use to determine
whether it can charge and if it can charge at a low or high current. Table 2 demonstrates how these outputs
should be interpreted. CHG_AL_N is an open drain output and is active when the output of the pin is low.
CHG_DET is a push-pull output and is high in the active state.
Table 2. BQ24392-Q1 Outputs
CHG_AL_N
CHG_DET
High-Z
X
Charging is not allowed
Low
Low
Low-current charging is allowed
Low
High
High-current charging is allowed
The system must define what is meant by low-current and high-current charging. If CHG_DET is high, a system
could try to draw 2 A, 1.5 A, or 1.0 A. If the system is trying to support greater than 1.5-A chargers, then the
system has to use a charger IC that is capable of monitoring the VBUS voltage as it tries to pull the higher
current values. If the voltage on VBUS starts to drop because that high of a current is supported then the system
has to reduce the amount of current it is trying to draw until it finds a stable state with VBUS not dropping.
8.1.1.2 SW_OPEN
SW_OPEN is an open drain output that indicates whether the USB switches are opened or closed. In the High-Z
state the switches are open and in the active, or low state, the switches are closed. The host should monitor this
pin to know when the switches are closed or open.
8.1.1.3 GOOD_BAT
GOOD_BAT is used by the host controller to indicate the status of the battery to the BQ24392-Q1. This pin
affects the switch status for a SDP or CDP, and it also affects the Dead Battery Provision (DBP) timer as
discussed in the Charger Detection section.
8.1.1.4 Slow Plug-in Event
As you insert a charger into the USB receptacle, the pins are configured so that the VBUS and GND pins make
contact first. This presents a problem as the BQ24392-Q1 (or any other charger detection IC) requires access to
the D+ and D– lines to run detection. This is why the BQ24392-Q1 has a standard 130-ms debounce time after
VBUS valid to run the detection algorithm. This delay helps minimize the effects of the D+ and D– lines making
contact after VBUS and GND.
Figure 4 is from the datasheet of a standard male micro-USB connector and shows how the data connections
(red line) are slightly recessed from the power connections (blue line).
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Data Lines
VBUS and
Ground
Figure 4. Data Connections Recessed from Power Connections
However, in some cases the charger is inserted very slowly, causing the VBUS and GND to make contact long
before D+ and D–. Due to this effect, there is no guaranteed detection time as the detection time can vary based
on how long it takes the user to insert the charger. If insertion takes longer than 600 ms, the detection algorithm
of the BQ24392-Q1 will timeout and detect the charger as a non-standard charger.
8.2 Typical Application
The BQ24392-Q1 device is used between the micro or mini-USB connector port and USB host to enable and
disable the USB data path and detect chargers that are inserted into the micro or mini-USB connector.
2.2Ω
VBUS
DM_HOST
USB
HOST
1pF-10pF
ESD
2.2Ω
1 pF
ESD
3.3V
10 kΩ
BQ24392
10 kΩ
DP_CON
USB
PORT
2.2Ω
1 pF
ESD
GND
GOOD_BAT
SYSTEM
&
CHARGER
1 µF~
10 µF
DP_HOST
DM_CON
100 kΩ
0.1 µF
SW_OPEN
CHG_AL_N
CHG_DET
Diode
0.5V
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Figure 5. Application Schematic
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Typical Application (continued)
8.2.1 Design Requirements
VBUS requires 1-μF – 10-μF and 0.1-μF bypass capacitors to reduce noise from circuit elements by providing a
low impedance path to ground for the unwanted high frequency content. The 0.1-μF capacitor filters out higher
frequencies and has a lower series inductance while the 1 μF ~ 10 μF capacitor filters out the lower frequencies
and has a much higher series inductance. Using both capacitors will provide better load regulation across the
frequency spectrum.
SW_OPEN and CHG_AL_N are open-drain outputs that require a 10-kΩ pull-up resistor to VDDIO and VBUS.
VBUS, DM_CON, and DP_CON are recommended to have an external resistor of 2.2 Ω to provide extra
ballasting to protect the chip and internal circuitry.
DM_CON and DP_CON are recommended to have a 1-pF external ESD protection diode rated for 8-kV IEC
protection to prevent failure in case of an 8-kV IEC contact discharge.
VBUS is recommended to have a 1-pF ~ 10-pF external ESD Protection Diode rated for 8-kV IEC protection to
prevent failure in case of an 8-kV IEC contact discharge
CHG_DET is a push-pull output pin. An external pull-up and diode are shown to depict a typical 3.3-V system.
The pull-up resistor and diode are optional. The pull-up range on the CHG_DET pin is from 3.5 V to VVBUS. When
VVBUS > 7 V, CHG_DET will be clamped to 7 V.
8.2.2 Detailed Design Procedure
The minimum pull-up resistance for the open-drain data lines is a function of the pull-up voltage VPU, output logic
LOW voltage VOL(max), and Output logic LOW current IOL.
RPU(MIN) = (VPU – VOL/MAX) / IOL
(1)
The maximum pull-up resistance for the open-drain data lines is a function of the maximum rise time of the
desired signal, tr, and the bus capacitance, Cb.
RPU(MAX) = tr / (0.8473 × Cb)
(2)
8.2.3 Application Curves
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Figure 6. 480-Mbps USB 2.0 Eye Diagram with No Device
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Figure 7. 480-Mbps USB 2.0 Eye Diagram with USB Switch
9 Power Supply Recommendations
Power to the device is supplied through the VBUS pin from the device that is inserted into the mini or micro-USB
port. The power from the inserted devices should follow BCv1.2 specification.
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10 Layout
10.1 Layout Guidelines
Place VBUS bypass capacitors as close to VBUS pin as possible and avoid placing the bypass caps near the
DP/DM traces.
The high speed DP/DM traces should always be matched lengths and must be no more than 4 inches;
otherwise, the eye diagram performance may be degraded. A high-speed USB connection is made through a
shielded, twisted pair cable with a differential characteristic impedance of 90 Ω ±15%. In layout, the impedance
of DP and DM traces should match the cable characteristic differential 90-Ω impedance.
Route the high-speed USB signals using a minimum of vias and corners. This reduces signal reflections and
impedance changes. When a via must be used, increase the clearance size around it to minimize its
capacitance. Each via introduces discontinuities in the signal’s transmission line and increases the chance of
picking up interference from the other layers of the board. Be careful when designing test points on twisted pair
lines; through-hole pins are not recommended.
When it becomes necessary to turn 90°, use two 45° turns or an arc instead of making a single 90° turn. This
reduces reflections on the signal traces by minimizing impedance discontinuities.
Do not route USB traces under or near crystals, oscillators, clock signal generators, switching regulators,
mounting holes, magnetic devices or IC’s that use or duplicate clock signals.
Avoid stubs on the high-speed USB signals because they cause signal reflections. If a stub is unavoidable, then
the stub should be less than 200 mm.
Route all high-speed USB signal traces over continuous planes (VCC or GND), with no interruptions.
Avoid crossing over anti-etch, commonly found with plane splits.
Due to high frequencies associated with the USB, a printed circuit board with at least four layers is
recommended; two signal layers separated by a ground and power layer as shown in Figure 8.
Signal 1
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GND Plane
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Power Plane
Signal 2
Copyright © 2017, Texas Instruments Incorporated
Figure 8. Four-Layer Board Stack-Up
The majority of signal traces should run on a single layer, preferably Signal 1. Immediately next to this layer
should be the GND plane, which is solid with no cuts. Avoid running signal traces across a split in the ground or
power plane. When running across split planes is unavoidable, sufficient decoupling must be used. Minimizing
the number of signal vias reduces EMI by reducing inductance at high frequencies.
Copyright © 2014–2017, Texas Instruments Incorporated
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13
BQ24392-Q1
SLIS160D – AUGUST 2014 – REVISED MARCH 2017
www.ti.com
10.2 Layout Example
LEGEND
VIA to VBUS Plane
Polygonal Copper Pour
Pull
resistor
VIA to GND Plane (Inner Layer)
To controller
Bypass capacitors
Pull-up
resistor
Ballast protection
10
CHG_DET
USB connector
1
SW_OPEN
VBUS
9
2
DM_HOST
DM_CON
8
3
DP_HOST
DP_CON
7
4
CHG_AL_N
GND
6
Impedance matched USB traces
Impedance matched USB traces
USB connector
GOOD_BAT
5
To controller
Pull-up
resistor
From Controller
Figure 9. Package Layout
14
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Copyright © 2014–2017, Texas Instruments Incorporated
BQ24392-Q1
www.ti.com
SLIS160D – AUGUST 2014 – REVISED MARCH 2017
11 Device and Documentation Support
11.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.2 Trademarks
E2E is a trademark of Texas Instruments.
Apple is a trademark of Apple.
TomTom is a trademark of TomTom International.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2014–2017, Texas Instruments Incorporated
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
BQ24392QRSERQ1
ACTIVE
UQFN
RSE
10
3000
RoHS & Green
NIPDAUAG
Level-3-260C-168 HR
-40 to 125
EXH
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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