bq24740
www.ti.com............................................................................................................................................... SLUS736C – DECEMBER 2006 – REVISED MARCH 2009
Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect
FEATURES
APPLICATIONS
• NMOS-NMOS Synchronous Buck Converter
with 300 kHz Frequency and >95% Efficiency
• 30-ns Minimum Driver Dead-time and 99.5%
Maximum Effective Duty Cycle
• High-Accuracy Voltage and Current Regulation
– ±0.5% Charge Voltage Accuracy
– ±3% Charge Current Accuracy
– ±3% Adapter Current Accuracy
– ±2% Input Current Sense Amp Accuracy
• Integration
– Internal Loop Compensation
– Internal Soft Start
• Safety
– Input Overvoltage Protection (OVP)
– Dynamic Power Management (DPM) with
Status Indicator
• Supports Two, Three, or Four Li+ Cells
• 5 – 24 V AC/DC-Adapter Operating Range
• Analog Inputs with Ratiometric Programming
via Resistors or DAC/GPIO Host Control
– Charge Voltage (4-4.512 V/Cell)
– Charge Current (up to 10 A, with 10-mΩ
Sense Resistor)
– Adapter Current Limit (DPM)
• Status and Monitoring Outputs
– AC/DC Adapter Present with Programmable
Voltage Threshold
– Low Input-Power Detect with Adjustable
Threshold and Hysteresis
– DPM Loop Active
– Current Drawn from Input Source
• Battery Discharge Current Sense with No
Adapter, or Selectable Low-Iq mode
• Supports Any Battery Chemistry: Li+, NiCd,
NiMH, Lead Acid, etc.
• Charge Enable
• 10-µA Off-State Current
• 28-pin, 5x5-mm QFN package
•
•
•
•
•
•
Notebook and Ultra-Mobile Computers
Portable Data-Capture Terminals
Portable Printers
Medical Diagnostics Equipment
Battery Bay Chargers
Battery Back-up Systems
DESCRIPTION
The bq24740 is a high-efficiency, synchronous
battery charger with integrated compensation,
offering low component count for space-constrained
multi-chemistry
battery
charging
applications.
Ratiometric charge current and voltage programming
allows high regulation accuracies, and can be either
hardwired with resistors or programmed by the
system power-management microcontroller using a
DAC or GPIOs.
PGND
REGN
LODRV
PH
HIDRV
PVCC
BTST
The bq24740 charges two, three, or four series Li+
cells, supporting up to 10 A of charge current, and is
available in a 28-pin, 5x5-mm thin QFN package.
28 27 26 25 24 23 22
CHGEN
1
ACN
2
ACP
3
bq24740
DPMDET
20
CELLS
19
SRP
4
28 LD QFN
18
SRN
ACDET
5
TOP VIEW
17
BAT
ACSET
6
16
SRSET
LPREF
7
15
IADAPT
ISYNSET
10 11 12 13 14
EXTPWR
9
VADJ
8
VDAC
LPMD
VREF
21
AGND
2
IADSLP
1
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPad is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2009, Texas Instruments Incorporated
bq24740
SLUS736C – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION (CONTINUED)
The bq24740 features Dynamic Power Management (DPM) and input power limiting. These features reduce
battery charge current when the input power limit is reached to avoid overloading the ac adapter when supplying
the load and the battery charger simultaneously. A current-sense amplifier enables precise measurement of input
current from the ac adapter to monitor the overall system power. If the adapter current is above the programmed
low-power threshold, a signal is sent to host so that the system optimizes its power performance according to
what is available from the adapter.
TYPICAL APPLICATION
SYSTEM
ADAPTER+
ADAPTER-
R10
2Ω
C1
2.2 µF
P
Q1 (ACFET)
SI4435
RAC
0.010 Ω
P
Q2 (ACFET )
SI4435
Controlled by
HOST
R1
432 kΩ
1%
C6
10 µF
C7
10 µF
D2
BAT54
C3
C2
0.1 µF
0.1 µF
ACN
PVCC
Q3(BATFET )
SI4435
Controlled by
HOST
C8
0.1 µF
ACP
ACDET
VREF
R3
10k Ω
bq24740
EXTPWR
PH
L1
C9
BTST
EXTPWR
D1
PACK+
ACSET
R5
10k Ω
C13
0.1 µF
LODRV
VREF
R4
10k Ω
C4
1 µF
PGND
C12
10 µF
C11
10 µF
C10
1 µF
N
DAC
RSR
0.010 Ω
8.2 µH
BAT 54 0.1 µF
REGN
SRSET
P
Q4
FDS6680A
HIDRV
AGND
N
R2
66.5 kΩ
1%
Q5
FDS6680 A
PACK-
C14
0.1 µF
IADSLP
SRP
HOST
DPMDET
SRN
LPMD
BAT
VREF
CELLS
R7
200 kΩ
CHGEN
LPREF
VDAC
ISYNSET
DAC
R6
24 kΩ
VADJ
ADC
R8
24.9 kΩ
PowerPad
IADAPT
C5
100 pF
C15
0.1 µF
R9
1.8 MΩ
( 1 ) Pull - up rail could be either VREF or other system rail .
( 2 ) SRSET /ACSET could come from either DAC or resistor dividers .
VIN = 20 V, VBAT = 3-cell Li-Ion, ICHARGE = 3 A, IADAPTER_LIMIT = 4 A
Figure 1. Typical System Schematic, Voltage and Current Programmed by DAC
2
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bq24740
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ADAPTER+
ADAPTER-
SYSTEM
R 10
2Ω
C1
2.2 µ F
P
Q 1 ( ACFET )
SI 4435
R AC
0 .010 Ω
P
Q 2 (ACFET)
SI4435
Controlled by
HOST
C7
10 µ F
C3
C2
0.1 µ F
R1
432 k Ω
1%
C6
10 µ F
D2
BAT54
0.1 µ F
ACN
PVCC
C8
0.1 µ F
ACP
Q 3 (BATFET )
SI 4435
Controlled by
HOST
ACDET
FDS 6680 A
PH
R3
10 k Ω
bq24740
EXTPWR
D1
R 13
100 kΩ
SRSET
R 11
100 kΩ
BAT 54
PACK+
8.2 µH
C 11
10 µF
0.1 µ F
REGN
R 14
C 10
1 µF
43 k Ω
C4
1 µF
N
R5
10 kΩ
PACK-
C 14
0 .1 µF
LODRV
VREF
R4
10 k Ω
C 12
10 µF
C 13
0 .1 µF
ACSET
R 12
66.5 k Ω
R SR
0 .010 Ω
L1
C9
BTST
EXTPWR
VREF
P
Q4
HIDRV
AGND
N
VREF
R2
66 .5 k Ω
1%
PGND
Q5
FDS 6680 A
IADSLP
SRP
DPMDET
SRN
GPIO
LPMD
BAT
VREF
CELLS
C 15
R7
200 k Ω
CHGEN
0.1 µF
LPREF
HOST
ADC
VREF
VDAC
REGN
VADJ
R8
24.9 k Ω
ISYNSET
R6
24 k Ω
PowerPad
IADAPT
C5
100 pF
R9
1 .8 M Ω
( 1 ) Pull- up rail could be either VREF or other system rail.
( 2 ) SRSET / ACSET could come from either DAC or resistor dividers.
A.
VIN = 20 V, VBAT = 3-cell Li-Ion, ICHARGE = 3 A, IADAPTER_LIMIT = 4 A
Figure 2. Typical System Schematic, Voltage and Current Programmed by Resistor
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ADAPTER+
SYSTEM
R10
2Ω
ADAPTER-
C1
2.2 µF
P
Q1 (ACFET)
SI4435
R AC
0 .010 Ω
P
Q 2 (ACFET )
SI 4435
Controlled by
HOST
R1
432 kΩ
1%
C6
10 µF
D2
BAT54C
C7
10 µF
C3
C2
0.1 µF
ACN
0.1 µF
PVCC
C8
0.1 µF
ACP
Q3 (BATFET)
SI4435
Controlled by
HOST
ACDET
VREF
R3
10 kΩ
PH
bq 24740
/EXTPWR
C9
L1
PACK+
D1
BAT 54
8.2 µH
C 11
10 µF
0.1 µF
REGN
SRSET
C10
1 µF
ACSET
C4
1 µF
PGND
IADSLP
HOST
C 12
10 µF
PACK-
C 14
0 .1 µF
N
R5
10 k Ω
C 13
0 .1 µF
LODRV
VREF
R4
10 k Ω
R SR
0 .010 Ω
BTST
EXTPWR
DAC
P
Q4
FDS 6680 A
HIDRV
AGND
N
R2
66.5 kΩ
1%
Q5
FDS6680A
SRP
DPMDET
SRN
LPMD
BAT
VREF
CELLS
R7
200 kΩ
CHGEN
C 15
0 .1 µF
LPREF
VDAC
R8
24.9 kΩ
ISYNSET
DAC
R6
24 kΩ
VADJ
ADC
PowerPad
IADAPT
C5
100 pF
R9
1.8 MΩ
( 1 ) Pull- up rail could be either VREF or other system rail .
( 2 ) SRSET / ACSET could come from either DAC or resistor dividers.
VIN = 20 V, VBAT = 3-cell Li-Ion, ICHARGE = 3 A, IADAPTER_LIMIT = 4 A
Figure 3. Typical System Schematic: Sensing Battery Discharge Current,
When Adapter Removed. (Set IADSLP at logic high)
ORDERING INFORMATION
Part number
Package
bq24740
28-PIN 5 x 5 mm QFN
Ordering Number
(Tape and Reel)
Quantity
bq24740RHDR
3000
bq24740RHDT
250
PACKAGE THERMAL DATA
PACKAGE
QFN – RHD
(1)
(2)
4
(1) (2)
θJA
TA = 70°C POWER RATING
DERATING FACTOR ABOVE TA = 25°C
39°C/W
2.36 W
0.028 W/°C
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. This is
connected to the ground plane by a 2x3 via matrix.
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Table 1. TERMINAL FUNCTIONS – 28-PIN QFN
TERMINAL
NAME
NO.
DESCRIPTION
CHGEN
1
Charge enable active-low logic input. LO enables charge. HI disables charge.
ACN
2
Adapter current sense resistor, negative input. A 0.1-µF ceramic capacitor is placed from ACN pin to AGND for
common-mode filtering. A 0.1-µF ceramic capacitor is placed from ACN to ACP to provide differential-mode filtering.
ACP
3
Adapter current sense resistor, positive input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to provide
differential-mode filtering. A 0.1-µF ceramic capacitor is placed from ACP pin to AGND for common-mode filtering.
4
Low power mode detect active-high open-drain logic output. Place a 10-kΩ pullup resistor from LPMD pin to the
pullup-voltage rail. Place a positive-feedback resistor from LPMD pin to LPREF pin for programming hysteresis (see
the design example for calculation). The output is HI when IADAPT pin voltage is lower than LPREF pin voltage. The
output is LO when IADAPT pin voltage is higher than LPREF pin voltage.
ACDET
5
Adapter detected voltage set input. Program the adapter detect threshold by connecting a resistor divider from
adapter input to ACDET pin to AGND pin. Adapter voltage is detected if ACDET-pin voltage is greater than 2.4 V.
The IADAPT current sense amplifier is active when the ACDET pin voltage is greater than 0.6 V. ACOV is input
overvoltage protection; it disables charge when ACDET > 3.1 V. ACOV does not latch, and normal operation
resumes when ACDET < 3.1 V.
ACSET
6
Adapter current set input. The voltage ratio of ACSET voltage versus VDAC voltage programs the input current
regulation set-point during Dynamic Power Management (DPM). Program by connecting a resistor divider from VDAC
to ACSET to AGND; or by connecting the output of an external DAC to the ACSET pin and connect the DAC supply
to the VDAC pin.
LPREF
7
Low power voltage set input. Connect a resistor divider from VREF to LPREF and AGND to program the reference
for the LOPWR comparator. The LPREF-pin voltage is compared to the IADAPT-pin voltage and the logic output is
given on the LPMD open-drain pin. Connecting a positive-feedback resistor from LPREF pin to LPMD pin programs
the hysteresis.
IADSLP
8
Enable IADAPT to enter sleep mode; active-low logic input. Allows low Iq sleep mode when adapter not detected.
Logic low turns off the Input Current Sense Amplifier (IADAPT) when adapter is not detected and ACDET pin is < 0.6
V - allows lower battery discharge current. Logic high keeps IADAPT current-sense amplifier on when adapter is not
detected and ACDET pin is 0.6 V, 0-30 mA
IVREF_LIM
VREF current limit
VVREF = 0 V, VACDET > 0.6 V
35
3.3
3.333
V
75
mA
6.2
V
REGN REGULATOR
VREGN_REG
REGN regulator voltage
VACDET > 0.6 V, 0-75 mA, PVCC > 10
V
5.6
IREGN_LIM
REGN current limit
VREGN = 0 V, VACDET > 0.6 V
90
135
mA
V
5.9
ADAPTER CURRENT SENSE AMPLIFIER
VACP/N_OP
Input common mode range
0
24
VIADAPT
IADAPT output voltage range
Voltage on ACP/SRN
0
2
V
IIADAPT
IADAPT output current
0
1
mA
AIADAPT
Current sense amplifier voltage gain
Adapter current sense accuracy
AIADAPT = VIADAPT / VIREG_DPM
20
V/V
VIREG_DPM = 40–100 mV
–2%
2%
VIREG_DPM = 20 mV
–3%
3%
VIREG_DPM = 5 mV
–25%
25%
VIREG_DPM = 1.5 mV
–30%
30%
IIADAPT_LIM
Output current limit
VIADAPT = 0 V
1
CIADAPT_MAX
Maximum output load capacitance
For stability with 0 mA to 1 mA load
mA
100
pF
24
V
2.424
V
ACDET COMPARATOR
VPVCC-BAT_OP
VACDET_CHG
Differential Voltage from PVCC to BAT
ACDET adapter-detect rising threshold
VACDET_CHG_HYS ACDET falling hysteresis
VACDET_BIAS
–20
Min voltage to enable charging,
VACDET rising
2.376
2.40
VACDET falling
40
mV
ACDET rising deglitch (1)
VACDET rising
518
700
908
ms
ACDET falling deglitch
VACDET falling
7
9
11
ms
ACDET enable-bias rising threshold
Min voltage to enable all bias, VACDET
rising
0.56
0.62
0.68
VACDET_BIAS_HYS Adapter present falling hysteresis
ACDET rising deglitch
(1)
ACDET falling deglitch
VACDET falling
20
VACDET rising
10
VACDET falling
10
V
mV
µs
INPUT OVERVOLTAGE COMPARATOR (ACOV)
AC Over-voltage rising threshold on
ACDET (See ACDET in Terminal
Functions)
VACOV
VACOV_HYS
(1)
8
3.007
3.1
AC Overvoltage rising deglitch
1.3
AC Overvoltage falling deglitch
1.3
3.193
V
ms
Specified by design.
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ELECTRICAL CHARACTERISTICS (continued)
7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
200
250
300
mV
AC CURRENT DETECT COMPARATOR (INPUT UNDERCURRENT)
VACIDET
Adapter current detect rising threshold
VACI = IAC × RAC × 20, falling edge
VACIDET_HYS
Adapter current detect hysteresis
Rising edge
50
mV
PVCC / BAT COMPARATOR
VPVCC-BAT_FALL
PVCC to BAT falling threshold
VPVCC-BAT__HYS
PVCC to BAT hysteresis
VPVCC – VBAT to disable charger
140
185
240
50
PVCC to BAT Rising Deglitch
VPVCC – VBAT > VPVCC-BAT_RISE
PVCC to BAT Falling Deglitch
VPVCC – VBAT < VPVCC-BAT_FALL
7
9
mV
mV
11
ms
µs
10
INPUT UNDERVOLTAGE LOCK-OUT COMPARATOR (UVLO)
UVLO
AC Undervoltage rising threshold
UVLO_HYS
AC Undervoltage hysteresis, falling
Measure on PVCC
3.5
4
4.5
260
V
mV
BAT OVERVOLTAGE COMPARATOR
VOV_RISE
Overvoltage rising threshold
(2)
VOV_FALL
Overvoltage falling threshold
(2)
104%
As percentage of VBAT_REG
102%
CHARGE OVERCURRENT COMPARATOR
VOC
Charge overcurrent falling threshold
As percentage of IREG_CHG
145%
Minimum Current Limit (SRP-SRN)
50
mV
INPUT CURRENT LOW-POWER MODE COMPARATOR
VACLP_HYS
AC low power hysteresis
VACLP_OFFSET
AC low power rising threshold
2.8
mV
1
THERMAL SHUTDOWN COMPARATOR
TSHUT
Thermal shutdown rising temperature
TSHUT_HYS
Thermal shutdown hysteresis, falling
Temperature Increasing
155
°C
20
PWM HIGH SIDE DRIVER (HIDRV)
RDS(on)_HI
High side driver turn-on resistance
VBTST – VPH = 5.5 V, tested at 100 mA
3
6
RDS(off)_HI
High side driver turn-off resistance
VBTST – VPH = 5.5 V, tested at 100 mA
0.7
1.4
VBTST_REFRESH
Bootstrap refresh comparator threshold
voltage
VBTST – VPH when low side refresh
pulse is requested
4
Ω
V
PWM LOW SIDE DRIVER (LODRV)
RDS(on)_HI
Low side driver turn-on resistance
REGN = 6 V, tested at 100 mA
3
6
RDS(off)_LO
Low side driver turn-off resistance
REGN = 6 V, tested at 100 mA
0.6
1.2
Ω
PWM DRIVERS TIMING
Driver Dead Time — Dead time when
switching between LODRV and HIDRV. No
load at LODRV and HIDRV
30
ns
PWM OSCILLATOR
FSW
PWM switching frequency
VRAMP_HEIGHT
PWM ramp height
(2)
240
As percentage of PVCC
360
6.6
kHz
%PVCC
Specified by design.
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ELECTRICAL CHARACTERISTICS (continued)
7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VBAT = 16.8 V, VACDET < 0.6 V,
VPVCC > 5 V, TJ = 85°C
7
10
VBAT = 16.8 V, VACDET < 0.6 V,
VPVCC > 5 V, TJ = 125°C
7
11
UNIT
QUIESCENT CURRENT
IOFF_STATE
Total off-state quiescent current into pins
SRP, SRN, BAT, BTST, PH, PVCC, ACP,
ACN
IBATQ_CD
Total quiescent current into pins SRP,
SRN, BAT, BTST, PH
Adapter present, VACDET >2.4V,
charge disabled
100
200
IAC
Adapter quiescent current
VPVCC = 20 V, charge disabled
2.8
4
µA
mA
INTERNAL SOFT START (8 steps to regulation current)
Soft start steps
Soft start step time
8
step
1.7
ms
CHARGER SECTION POWER-UP SEQUENCING
Charge-enable delay after power-up
Delay from when adapter is detected
to when the charger is allowed to turn
on
518
700
908
ms
ISYNSET AMPLIFIER AND COMPARATOR (SYNCHRONOUS TO NON-SYNCHRONOUS TRANSITION)
ISYN Accuracy
V(SRP-SRN) = 5 mV
–20%
ISYNSET pin voltage
VISYNSET
20%
1
V
ISYNSET rising deglitch
20
µs
ISYNSET falling deglitch
640
µs
LOGIC IO PIN CHARACTERISTICS (CHGEN, IADSLP )
VIN_LO
Input low threshold voltage
VIN_HI
Input high threshold voltage
IBIAS
Input bias current
0.8
V
1
µA
2.1
VCHGEN = 0 to VREGN
LOGIC INPUT PIN CHARACTERISTICS (CELLS)
VIN_LO
Input low threshold voltage, 3 cells
CELLS voltage falling edge
0.5
VIN_MID
Input mid threshold voltage, 2 cells
CELLS voltage rising for MIN,
CELLS voltage falling for MAX
0.8
VIN_HI
Input high threshold voltage, 4 cells
CELLS voltage rising
2.5
IBIAS_FLOAT
Input bias float current for 2-cell selection
V = 0 to V
–1
1.8
V
1
µA
OPEN-DRAIN LOGIC OUTPUT PIN CHARACTERISTICS (EXTPWR)
VOUT_LO
Output low saturation voltage
0.5
V
Delay, EXTPWR falling
Sink Current = 4 mA
518
700
908
ms
Delay, EXTPWR rising
7
9
11
ms
0.5
V
OPEN-DRAIN LOGIC OUTPUT PIN CHARACTERISTICS (DPMDET, LPMD)
VOUT_LO
Output low saturation voltage
Sink Current = 5 mA
Delay, rising/falling
10
10
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TYPICAL CHARACTERISTICS
Table of Graphs
Y
X
Figure
VREF Load and Line Regulation
vs Load Current
Figure 4
REGN Load and Line Regulation
vs Load Current
Figure 5
BAT Voltage
vs VADJ/VDAC Ratio
Figure 6
Charge Current
vs SRSET/VDAC Ratio
Figure 7
Input Current
vs ACSET/VDAC Ratio
Figure 8
BAT Voltage Regulation Accuracy
vs Charge Current
Figure 9
BAT Voltage Regulation Accuracy
Figure 10
Charge Current Regulation Accuracy
Figure 11
Input Current Regulation (DPM) Accuracy
Figure 12
VIADAPT Input Current Sense Amplifier Accuracy
Figure 13
Input Regulation Current (DPM), and Charge Current
vs System Current
Figure 14
Transient System Load (DPM) Response
Figure 15
Charge Current Regulation
vs BAT Voltage
Figure 16
Efficiency
vs Battery Charge Current
Figure 17
Battery Removal (from Constant Current Mode)
Figure 18
REF and REGN Startup
Figure 19
Charger on Adapter Removal
Figure 20
Charge Enable / Disable and Current Soft-Start
Figure 21
Nonsynchronous to Synchronous Transition
Figure 22
Synchronous to Nonsynchronous Transition
Figure 23
Near 100% Duty Cycle Bootstrap Recharge Pulse
Figure 24
Battery Shorted Charger Response, Over Current Protection (OCP) and Charge Current Regulation
Figure 25
Continuous Conduction Mode (CCM) Switching Waveforms
Figure 26
Discontinuous Conduction Mode (DCM) Switching Waveforms
Figure 27
DPMDET Response With Transient System Load
Figure 28
VREF LOAD AND LINE REGULATION
vs
LOAD CURRENT
REGN LOAD AND LINE REGULATION
vs
LOAD CURRENT
0
0.50
-0.50
Regulation Error - %
Regulation Error - %
0.40
0.30
PVCC = 10 V
0.20
0.10
0
-1
-1.50
PVCC = 10 V
-2
PVCC = 20 V
-2.50
-0.10
PVCC = 20 V
-0.20
-3
0
10
20
30
VREF - Load Current - mA
40
50
0
Figure 4.
10
20
30
40
50
60
REGN - Load Current - mA
70
80
Figure 5.
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BAT VOLTAGE
vs
VADJ/VDAC RATIO
CHARGE CURRENT
vs
SRSET/VDAC RATIO
10
18.2
VADJ = 0 -VDAC,
4-Cell,
No Load
Voltage Regulation - V
17.8
SRSET Varied,
4-Cell,
Vbat = 16 V
9
Charge Current Regulation - A
18
17.6
17.4
17.2
17
16.8
16.6
16.4
8
7
6
5
4
3
2
1
16.2
0
16
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1
0.1
0.2
0.3
VADJ/VDAC Ratio
0.8
0.9
Figure 6.
Figure 7.
INPUT CURRENT
vs
ACSET/VDAC RATIO
BAT VOLTAGE REGULATION ACCURACY
vs
CHARGE CURRENT
1
0.2
10
ACSET Varied,
4-Cell,
Vbat = 16 V
9
8
Vreg = 16.8 V
0.1
Regulation Error - %
Input Current Regulation - A
0.4
0.5
0.6
0.7
SRSET/VDAC Ratio
7
6
5
4
3
0
-0.1
2
1
-0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
ACSET/VDAC Ratio
0.8
0.9
0
1
2000
Figure 8.
BAT VOLTAGE REGULATION ACCURACY
CHARGE CURRENT REGULATION ACCURACY
4-Cell, VBAT = 16 V
1
VADJ = 0 -VDAC
SRSET Varied
0
-1
0.04
Regulation Error - %
Regulation Error - %
8000
2
0.06
4-Cell, no load
0.02
0
-0.02
-0.04
-0.06
-0.10
16.5
-2
-3
-4
-5
-6
-7
-8
-0.08
-9
-10
17
17.5
18
18.5
19
0
V(BAT) - Setpoint - V
Figure 10.
12
6000
Figure 9.
0.10
0.08
4000
Charge Current - mA
2
4
I(CHRG) - Setpoint - A
6
8
Figure 11.
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INPUT CURRENT REGULATION (DPM) ACCURACY
VIADAPT INPUT CURRENT SENSE AMPLIFIER ACCURACY
5
10
ACSET Varied
9
0
7
4-Cell, VBAT = 16 V
6
Percent Error
Regulation Error - %
8
5
4
3
2
VI = 20 V, CHG = EN
-5
VI = 20 V, CHG = DIS
-10
-15
1
0
-20
-1
-2
-25
Iadapt Amplifier Gain
0
1
2
3
4
Input Current Regulation Setpoint - A
5
0
6
1
2
3
4
5
6
I(ACPWR) - A
7
8
9
10
Figure 12.
Figure 13.
INPUT REGULATION CURRENT (DPM), AND CHARGE
CURRENT
vs
SYSTEM CURRENT
TRANSIENT SYSTEM LOAD (DPM) RESPONSE
5
VI = 20 V,
4-Cell,
Vbat = 16 V
4
Ichrg and Iin - A
Input Current
3
2
System Current
Charge Current
1
0
0
1
2
System Current - A
3
4
Figure 14.
Figure 15.
CHARGE CURRENT REGULATION
vs
BAT VOLTAGE
EFFICIENCY
vs
BATTERY CHARGE CURRENT
5
100
V(BAT) = 16.8 V
Efficiency - %
Charge Current - A
4
3
2
90
Vreg = 12.6 V
Vreg = 8.4 V
80
1
Ichrg_set = 4 A
70
0
0
2
4
6
8
10
12
Battery Voltage - V
14
16
18
0
Figure 16.
2000
6000
4000
Battery Charge Current - mA
8000
Figure 17.
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VBAT
Ch2
2 V/div
VACDET
VREF
Ch3
5 V/div
IBAT
VREGN
t − Time = 2 ms/div
Figure 19.
CHARGER ON ADAPTER REMOVAL
CHARGE ENABLE / DISABLE AND CURRENT
SOFT-START
Ch1
10 V/div
Figure 18.
VCHGEN
Ch4
1 V/div
VIN
VBAT
Ch2
20 V/div
VBAT
Ch3
2 A/div
Ch4
Ch1
5 V/div 5 V/div
t − Time = 5 ms/div
VPH
Ch3
2 A/div
IL
IBAT
t − Time = 200 ms/div
t − Time = 4 ms/div
Figure 21.
NONSYNCHRONOUS TO SYNCHRONOUS TRANSITION
SYNCHRONOUS TO NONSYNCHRONOUS TRANSITION
VHIDRV
Ch2
10 V/div
VPH
VLODRV
Ch4
5 V/div
VPH
VLDDRV
Ch3
2 A/div
Ch2
Ch3
Ch4
2 A/div 5 V/div 10 V/div
Ch1
10 V/div
Figure 20.
IL
IL
t − Time = 2 ms/div
t − Time = 4 ms/div
Figure 22.
14
Ch1
1.8 V
Ch2
Ch3
5 A/div 20 V/div
VPH
Ch1
2 V/div
REF AND REGN STARTUP
Ch4
12.3 V
Ch4
1 V/div
BATTERY REMOVAL
Figure 23.
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BATTERY SHORTED CHARGER RESPONSE,
OVERCURRENT PROTECTION (OCP) AND CHARGE
CURRENT REGULATION
Ch4
10 V/div
VPH
VBAT
VHIDRV
Ch3
2 A/div
Ch4
Ch3
2 A/div 5 V/div
Ch2
Ch1
20 V/div 20 V/div
NEAR 100% DUTY CYCLE BOOTSTRAP RECHARGE
PULSE
VLODRV
IL
IL
t − Time = 400 ms/div
t − Time = 4 ms/div
CONTINUOUS CONDUCTION MODE (CCM) SWITCHING
WAVEFORMS
DISCONTINUOUS CONDUCTION MODE (DCM)
SWITCHING WAVEFORMS
Ch2
20 V/div
VPH
Ch3
5 V/div
VHIDRV
VLODRV
Ch4
2 A/div
Ch2
20 V/div
Ch3
5 V/div
Ch4
5 A/div
Ch1
20 V/div
Figure 25.
Ch1
20 V/div
Figure 24.
IL
VPH
VHIDRV
VLODRV
IL
t − Time = 1 ms/div
t − Time = 1 ms/div
Figure 26.
Figure 27.
DPMDET
IBAT
Isys
Ch4
5 A/div
Ch3
5 A/div
Ch2
5 A/div
Ch1
2 V/div
DPMDET RESPONSE WITH TRANSIENT SYSTEM LOAD
IIN
t - Time = 20 ms/div
Figure 28.
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FUNCTIONAL BLOCK DIAGRAM
700 ms
ENA_BIAS_CMP
-
0.6 V
AC_VGOOD
-
2.4 V
+
+
ACDET
VREFGOOD
3.3 V
LDO
VREF
V(IADAPT)
ENA_BIAS
+
-
250 mV +-
IADSLP
IADSLP
UVLO
EAI
ACP
EXTPWR
AC_VGOOD_DG
Rising
Delay
AC_IGOOD
CHGEN
EAO
FBO
+
V(ACP-ACN)
20x
-
-
IIN_REG
PVCC
IIN_ER
AC_VGOOD_DG
COMP
ERROR
AMPLIFIER
+
ACN
BTST
CHGEN
BAT
VBAT_REG
BAT_ER
+
1V
LEVEL
SHIFTER
+
HIDRV
SRP
3.5 mA
V(SRP-SRN)
+
–
-
20x
IBAT_REG
SRN
DC-DC
CONVERTER
PWM LOGIC
ICH_ER
20 µA
+
PH
3.5 mA
SYNCH
20 µA
CHRG_ON
PVCC
PVCC_BAT
V(SRP-SRN)
+
SYNCH
BTST
-
ISYNSET
REGN
6 V LDO
VREFGOOD
REFRESH
CBTST
LODRV
+
+
4V _
PH
ACSET
IC Tj
+
155°C
-
PGND
TSHUT
ACP
SRSET
VBATSET
VBAT_REG
IBATSET
IINSET
IBAT_REG
VADJ
ACN
104% X VBAT_REG
-
BAT
+
+
V(IADAPT)
20x
-
IADAPT
BAT_OVP
RATIO
IIN_REG
PROGRAM
145% X IBAT_REG
-
V(SRP-SRN)
+
ACDET
+
CHG_OCP
DPMDET
DPM_LOOP_ON
VDAC
3.1 V +V(IADAPT)
LPREF
ACOV
-
CELLS
+
AGND
PVCC
LPMD
-
UVLO
PGND
+
4 V +-
PVCC
BAT
–+
185 mV
16
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+
PVCC_BAT
–
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DETAILED DESCRIPTION
BATTERY VOLTAGE REGULATION
The bq24740 uses a high-accuracy voltage regulator for charging voltage. Internal default battery voltage setting
VBATT = 4.2 V × cell count. The regulation voltage is ratio-metric with respect to VADC. The ratio of VADJ and
VDAC provides extra 12.5% adjust range on VBATT regulation voltage. By limiting the adjust range to 12.5% of
the regulation voltage, the external resistor mismatch error is reduced from ±1% to ±0.1%. Therefore, an overall
voltage accuracy as good as 0.5% is maintained, while using 1% mis-match resistors. Ratio-metric conversion
also allows compatibility with D/As or microcontrollers (µC). The battery voltage is programmed through VADJ
and VDAC using Equation 1.
é
æ
öù
V
VBAT = cell count x êê 4V + ççç0.512 x VADJ ÷÷÷úú
çè
VVDAC ÷øúû
êë
(1)
The input voltage range of VDAC is between 2.6 V and 3.6 V. VADJ is set between 0 and VDAC. VBATT defaults
to 4.2 V × cell count when VADJ is connected to REGN.
CELLS pin is the logic input for selecting cell count. Connect CELLS to charge 2, 3, or 4 Li+ cells. When
charging other cell chemistries, use CELLS to select an output voltage range for the charger.
CELLS
CELL COUNT
Float
2
AGND
3
VREF
4
The per-cell battery termination voltage is function of the battery chemistry. Consult the battery manufacturer to
determine this voltage.
The BAT pin is used to sense the battery voltage for voltage regulation and should be connected as close to the
battery as possible, or directly on the output capacitor. A 0.1-µF ceramic capacitor from BAT to AGND is
recommended to be as close to the BAT pin as possible to decouple high frequency noise.
BATTERY CURRENT REGULATION
The SRSET input sets the maximum charging current. Battery current is sensed by resistor RSR connected
between SRP and SRN. The full-scale differential voltage between SRP and SRN is 100 mV. Thus, for a 0.010 Ω
sense resistor, the maximum charging current is 10 A. SRSET is ratio-metric with respect to VDAC using
Equation 2:
V
I CHARGE + SRSET 0.10
VVDAC
R SR
(2)
The input voltage range of SRSET is between 0 and VDAC, up to 3.6 V.
The SRP and SRN pins are used to sense across RSR with default value of 10 mΩ. However, resistors of other
values can also be used. For a larger the sense resistor, you get a larger sense voltage, and a higher regulation
accuracy; but, at the expense of higher conduction loss.
INPUT ADAPTER CURRENT REGULATION
The total input from an AC adapter or other DC sources is a function of the system supply current and the battery
charging current. System current normally fluctuates as portions of the systems are powered up or down. Without
Dynamic Power Management (DPM), the source must be able to supply the maximum system current and the
maximum charger input current simultaneously. By using DPM, the input current regulator reduces the charging
current when the input current exceeds the input current limit set by ACSET. The current capability of the AC
adapter can be lowered, reducing system cost.
Similar to setting battery regulation current, adapter current is sensed by resistor RAC connected between ACP
and ACN. Its maximum value is set ACSET, which is ratio-metric with respect to VDAC, using Equation 3.
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V
I ADAPTER + ACSET
VVDAC
0.10
R AC
(3)
The input voltage range of ACSET is between 0 and VDAC, up to 3.6 V.
The ACP and ACN pins are used to sense RAC with default value of 10mΩ. However, resistors of other values
can also be used. For a larger the sense resistor, you get a larger sense voltage, and a higher regulation
accuracy; but, at the expense of higher conduction loss.
ADAPTER DETECT AND POWER UP
An external resistor voltage divider attenuates the adapter voltage before it goes to ACDET. The adapter detect
threshold should typically be programmed to a value greater than the maximum battery voltage and lower than
the minimum allowed adapter voltage. The ACDET divider should be placed before the ACFET in order to sense
the true adapter input voltage whether the ACFET is on or off.
If PVCC is below 4 V, the device is disabled.
If ACDET is below 0.6 V but PVCC is above 4 V, part of the bias is enabled, including a crude bandgap
reference. IADAPT is disabled and pulled down to GND. The total quiescent current is less than 10 µA.
Once ACDET rises above 0.6 V and PVCC is above 4 V, all the bias circuits are enabled and REGN output goes
to 6 V and VREF goes to 3.3 V. IADAPT becomes valid to proportionally reflect the adapter current. The total
quiescent current is about 1 mA.
When ACDET keeps rising and passes 2.4 V, a valid ac adapter is present. 700ms later, the following occurs:
• EXTPWR becomes low through external pull-up resistor to the host digital voltage rail.
• Charging begins if all the conditions are satisfied, see the ENABLE AND DISABLE CHARGING section.
ENABLE AND DISABLE CHARGING
The following conditions have to be valid before charge is enabled:
• CHGEN is LOW;
• PVCC > UVLO;
• Adapter is detected;
• Adapter is higher than PVCC-BAT threshold;
• Adapter is not overvoltage;
• 700 ms delay is complete after adapter detected;
• REGNGOOD and VREFGOOD are valid;
• Thermal Shut (TSHUT) is not valid;
One of the following conditions will stop on-going charging:
• CHGEN is HIGH;
• PVCC < UVLO;
• Adapter is removed;
• Adapter is less than 185 mV above battery;
• Adapter is overvoltage;
• Adapter is overcurrent;
• TSHUT IC temperature threshold is reached (155°C on rising-edge with 20°C hysteresis).
AUTOMATIC INTERNAL SOFT-START CHARGER CURRENT
The charger automatically soft-starts the charger regulation current every time the charger is enabled to ensure
there is no overshoot or stress on the output capacitors or the power converter. The soft-start consists of
stepping-up the charge regulation current into 8 evenly divided steps up to the programmed charge current. Each
step lasts around 1.7 ms, for a typical rise time of 13.6 ms. No external components are needed for this function.
18
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CONVERTER OPERATION
The synchronous buck PWM converter uses a fixed frequency (300 kHz) voltage mode with feed-forward control
scheme. A type III compensation network allows using ceramic capacitors at the output of the converter. The
compensation input stage is connected internally between the feedback output (FBO) and the error amplifier
input (EAI). The feedback compensation stage is connected between the error amplifier input (EAI) and error
amplifier output (EAO). The LC output filter is selected to give a resonant frequency of 8–12.5 kHz nominal.
Where resonant frequency, fo, is given by:
1
fo +
Ǹ
2p LoC o
(4)
where (from Figure 1 schematic)
• CO = C11 + C12
• LO = L1
An internal saw-tooth ramp is compared to the internal EAO error control signal to vary the duty-cycle of the
converter. The ramp height is one-fifteenth of the input adapter voltage making it always directly proportional to
the input adapter voltage. This cancels out any loop gain variation due to a change in input voltage, and
simplifies the loop compensation. The ramp is offset by 200 mV in order to allow zero percent duty-cycle, when
the EAO signal is below the ramp. The EAO signal is also allowed to exceed the saw-tooth ramp signal in order
to get a 100% duty-cycle PWM request. Internal gate drive logic allows achieving 99.98% duty-cycle while
ensuring the N-channel upper device always has enough voltage to stay fully on. If the BTST pin to PH pin
voltage falls below 4 V for more than 3 cycles, then the high-side n-channel power MOSFET is turned off and the
low-side n-channel power MOSFET is turned on to pull the PH node down and recharge the BTST capacitor.
Then the high-side driver returns to 100% duty-cycle operation until the (BTST-PH) voltage is detected to fall low
again due to leakage current discharging the BTST capacitor below the 4 V, and the reset pulse is reissued.
The 300 kHz fixed frequency oscillator keeps tight control of the switching frequency under all conditions of input
voltage, battery voltage, charge current, and temperature, simplifying output filter design and keeping it out of the
audible noise region. The charge current sense resistor RSR should be placed with at least half or more of the
total output capacitance placed before the sense resistor contacting both sense resistor and the output inductor;
and the other half or remaining capacitance placed after the sense resistor. The output capacitance should be
divided and placed onto both sides of the charge current sense resistor. A ratio of 50:50 percent gives the best
performance; but the node in which the output inductor and sense resistor connect should have a minimum of
50% of the total capacitance. This capacitance provides sufficient filtering to remove the switching noise and give
better current sense accuracy. The type III compensation provides phase boost near the cross-over frequency,
giving sufficient phase margin.
SYNCHRONOUS AND NON-SYNCHRONOUS OPERATION
The charger operates in non-synchronous mode when the sensed charge current is below the ISYNSET value.
Otherwise, the charger operates in synchronous mode.
During synchronous mode, the low-side n-channel power MOSFET is on, when the high-side n-channel power
MOSFET is off. The internal gate drive logic ensures there is break-before-make switching to prevent
shoot-through currents. During the 30ns dead time where both FETs are off, the back-diode of the low-side
power MOSFET conducts the inductor current. Having the low-side FET turn-on keeps the power dissipation low,
and allows safe charging at high currents. During synchronous mode the inductor current is always flowing and
operates in Continuous Conduction Mode (CCM), creating a fixed two-pole system.
During non-synchronous operation, after the high-side n-channel power MOSFET turns off, and after the
break-before-make dead-time, the low-side n-channel power MOSFET turns on for around 80ns, then the
low-side power MOSFET turns off and stays off until the beginning of the next cycle, where the high-side power
MOSFET is turned on again. The 80ns low-side MOSFET on time is required to ensure the bootstrap capacitor is
always recharged and able to keep the high-side power MOSFET on during the next cycle. This is important for
battery chargers; where, unlike regular dc-dc converters, there is a battery load that maintains a voltage and can
both source and sink current. The 80-ns low-side pulse pulls the PH node (connection between high and low-side
MOSFET) down, allowing the bootstrap capacitor to recharge up to the REGN LDO value. After the 80ns, the
low-side MOSFET is kept off to prevent negative inductor current from occurring. The inductor current is blocked
by the off low-side MOSFET, and the inductor current will become discontinuous. This mode is called
Discontinuous Conduction Mode (DCM).
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During the DCM mode the loop response automatically changes and has a single pole system at which the pole
is proportional to the load current, because the converter does not sink current, and only the load provides a
current sink. This means at very low currents the loop response is slower, as there is less sinking current
available to discharge the output voltage. At low currents during non-synchronous operation, there may be a
small amount of negative inductor current during the 80 ns recharge pulse. The charge should be low enough to
be absorbed by the input capacitance.
When BTST – PH < 4 V, the 80-ns recharge pulse occurs on LODRV, the high-side MOSFET does not turn on,
and the low-side MOSFET does not turn on (only 80-ns recharge pulse).
ISYNSET CONTROL (SYN and NON-SYN MODE SETTING)
The ISYNSET pin is used to program the charge current threshold at which the charger changes from
synchronous operation into non-synchronous operation. The low side driver turns on for only 80 ns to charge the
boost cap. This is important to prevent negative inductor current, which may cause a boost effect in which the
input voltage increases as power is transferred from the battery to the input capacitors. This boost effect can lead
to an overvoltage on the PVCC node and potentially cause some damage to the system. This programmable
value allows setting the current threshold for any inductor current ripple, and avoiding negative inductor current.
The minimum synchronous threshold should be set from = of the inductor current ripple to the full ripple current,
where the inductor current ripple is given by:
I ripple _ max
2
£ I SYN £ I ripple _ max
and
(Vin - Vbat ) ´
I ripple =
Vbat 1
´
Vin f s
L
Vin ´ (1 - D) ´ D ´
=
1
fs
L
(5)
where
VIN: adapter voltage
VBAT: BAT voltage
fS: switching frequency
L: output inductor
D: duty cycle
IRIPPLE_MAX occurs when the duty cycle, D is mostly near to 0.5 at given Vin, fs and L. The ISYNSET comparator,
or charge undercurrent comparator, compares the voltage between SRP-SNR and the threshold set by an
external resistor RISYNSET, which can be calculated by:
20
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RISYNSET =
250 V
W
ISYN x RSENSE
(6)
RSENSE
SRN
SRP
-
+
3.3 V
ISYN
20X
I =1V/R_ISYNSET
1V
SYNCH
UCP
+
-
+
5 kΩ
ISYNSET
R_ISYNSET
Figure 29. Charge Undercurrent Comparator, ISYNSET Comparator Block
HIGH ACCURACY IADAPT USING CURRENT SENSE AMPLIFIER (CSA)
An industry standard, high accuracy current sense amplifier (CSA) is used to monitor the input current by the
host or some discrete logic through the analog voltage output of the IADAPT pin. The CSA amplifies the input
sensed voltage of ACP – ACN by 20x through the IADAPT pin. The IADAPT output is a voltage source 20 times
the input differential voltage. Once PVCC is above 5 V and ACDET is above 0.6V, IADAPT no longer stays at
ground, but becomes active. If the user wants to lower the voltage, they could use a resistor divider from IOUT to
AGND, and still achieve accuracy over temperature as the resistors can be matched their thermal coefficients.
A 100-pF capacitor connected on the output is recommended for decoupling high-frequency noise. An additional
RC filter is optional, after the 100-pF capacitor, if additional filtering is desired. Note that adding filtering also
adds additional response delay.
INPUT OVERVOLTAGE PROTECTION (ACOV)
ACOV provides protection to prevent system damage due to high input voltage. The controller enters ACOV
when ACDET > 3.1 V and charge is disabled. ACOV is not latched—normal operation resumes when the ACDET
voltage returns below 3.1 V. ACOV threshold is 130% of the adapter-detect threshold.
INPUT UNDERVOLTAGE LOCK OUT (UVLO)
The system must have a minimum 4 V PVCC voltage to allow proper operation. This PVCC voltage could come
from either input adapter or battery, using a diode-OR input. When the PVCC voltage is below 4 V the bias
circuits REGN and VREF stay inactive, even with ACDET above 0.6 V.
INPUT CURRENT LOW-POWER MODE DETECTION
To optimize the system performance, the HOST monitors the adapter current. Once the adapter current is above
threshold set via LPREF, LPMD pin sends signal to HOST. The signal alarms the host that input power has
exceeded the programmed limit, allowing the host to throttle back system power by reducing clock frequency,
lowering rail voltages, or disabling certain parts of the system. The LPMD pin is an open-drain output. Connect a
pull-up resistor to LPMD. The output is logic HI when the IADAPT output voltage (IADAPT = 20 × VACP-ACN) is lower
than the LPREF input voltage. The LPREF threshold is set by an external resistor divider using VREF. A
hysteresis can be programmed by a positive feedback resistor from LPMD pin to the LPREF pin.
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ACVDET
Comparator
ACDET
2.4 V
+
-
t_dg
rising
700 ms
AC_VGOOD
AC_VGOOD_DG
To Control Logic
EXT_PWR_DG
ACP
1 kΩ
Adaptor
Current Sense
Amplifier
+
ACIDET
Comparator
250 mV
AC_IGOOD
(1.25 A)
+
-
ACN
EXTPWR
IADAPT
Error
Amplifier
Disable
20 kΩ
+
20 xV(ACP-ACN)
IADAPT
IADAPT
Disable
IADAPT
OUTPUT
BUFFER
LPMD
Comparator
+
LPREF
LOPWR_DET
LPMD
Program Hysteresis of comparator externally
by putting a resistor in feedback from LPMD pin to LPREF pin.
Figure 30. EXTPWR, LPREF and LPMD Logic
BATTERY OVERVOLTAGE PROTECTION
The converter stops switching when BAT voltage goes above 104% of the regulation voltage. The converter will
not allow the high-side FET to turn on until the BAT voltage goes below 102% of the regulation voltage. This
allows one-cycle response to an overvoltage condition, such as when the load is removed or the battery is
disconnected. A 10-mA current sink from BAT to PGND is on only during charge, and allows discharging the
stored output-inductor energy into the output capacitors.
CHARGE OVERCURRENT PROTECTION
The charger has a secondary overcurrent protection. It monitors the charge current, and prevents the current
from exceeding 145% of regulated charge current. The high-side gate drive turns off when the overcurrent is
detected, and automatically resumes when the current falls below the over-current threshold.
THERMAL SHUTDOWN PROTECTION
The QFN package has low thermal impedance, which provides good thermal conduction from the silicon to the
ambient, to keep junctions temperatures low. As added level of protection, the charger converter turns off and
self-protects whenever the junction temperature exceeds the TSHUT threshold of 155°C. The charger stays off
until the junction temperature falls below 135°C.
22
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Status Outputs (EXTPWR, LPMD, DPMDET pin)
Four status outputs are available, and they all, except for LPMD, require external pull up resistors to pull the pins
to system digital rail for a high level.
EXTPWR open-drain output goes low under either of the two conditions:
1. ACDET is above 2.4 V
2. Adapter current is above 1.25 A using a 10-mΩ sense resistor (IADAPT voltage above 250 mV). Internally,
the AC current detect comparator looks between IADAPT and an internal 250-mV threshold. It indicates a
good adapter is connected because of valid voltage or current.
LPMD open-drain output goes low when the input current is higher than the programmed threshold via LPREF
pin. Hysteresis can be programmed by putting a resistor from LPREF pin to LPMD pin.
DPMDET open-drain output goes low when the DPM loop is active to reduce the battery charge current (after a
10-ms delay).
Table 2. Component List for Typical System Circuit of Figure 1
PART DESIGNATOR
QTY
DESCRIPTION
Q1, Q2, Q3
3
P-channel MOSFET, –30V,-6A, SO-8, Vishay-Siliconix, Si4435
Q4, Q5
2
N-channel MOSFET, 30V, 12.5A, SO-8, Fairchild, FDS6680A
D1, D2
2
Diode, Dual Schottky, 30V, 200mA, SOT23, Fairchild, BAT54C
RAC, RSR
2
Sense Resistor, 10 mΩ, 1%, 1W, 2010, Vishay-Dale, WSL2010R0100F
L1
1
Inductor, 8.2µH, 24.8mΩ, Vishay-Dale, IHLP5050CE-01
C6, C7, C11, C12
4
Capacitor, Ceramic, 10µF, 35V, 20%, X5R, 1206, Panasonic, ECJ-3YB1E106M
C4, C10
2
Capacitor, Ceramic, 1µF, 25V, 10%, X7R, 2012, TDK, C2012X7R1E105K
C2, C3, C8, C9, C13, C14, C15
7
Capacitor, Ceramic, 0.1µF, 50V, 10%, X7R, 0805, Kemet, C0805C104K5RACTU
C1
1
Capacitor, Ceramic, 2.2µF, 25V, 2%, X5R, 1206, Panasonic, ECJ3YB1E225M
C5
1
Capacitor, Ceramic, 100pF, 50V, 10%, X7R, 0805, Kemet, C0805C101K5RACTU
R3, R4, R5
3
Resistor, Chip, 10 kΩ, 1/16W, 5%, 0402
R1
1
Resistor, Chip, 432 kΩ, 1/16W, 1%, 0402
R2
1
Resistor, Chip, 66.5 kΩ, 1/16W, 1%, 0402
R6
1
Resistor, Chip, 24kΩ, 1/16W, 1%, 0402
R7
1
Resistor, Chip, 200 kΩ, 1/16W, 1%, 0402
R8
1
Resistor, Chip, 24.9 kΩ, 1/16W, 1%, 0402
R9
1
Resistor, Chip, 1.8 MΩ, 1/16W, 1%, 0402
R10
1
Resistor, Chip, 2 Ω, 1W, 5%, 2012
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23
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SLUS736C – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com
APPLICATION INFORMATION
During the adapter hot plug-in, the ACFET has not been turned on. The AC switch is off and the simplified
equivalent circuit of the input is shown in Figure 31
IIN
Ri
Vi
VIN
Li
Rc
Ci Vc
Figure 31. Simplified Equivalent Circuit During Adapter Insertion
The voltage on the charger input side VIN is given by:
V IN(t) + I IN(t)
RC ) VCi(t) + Vie
Ri
t
2L i
ƪ
Ri * RC
sin wt ) cos wt
wL i
ƫ
(7)
in which,
1
R t = Ri + R C w =
VCi (t) = Vi - Vie
L i Ci
Rt
t
2Li
-
æ Rt ö
ç ÷
è 2Li ø
2
IIN (t) =
Vi
Ri
t
2Li
e
sin w t
wL i
æ Rt
ö
s in w t + cosw t ÷
ç
è 2w L i
ø
(8)
(9)
The damping condition is:
Ri ) Rc u 2
24
Ǹ
Li
Ci
(10)
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Figure 32(a) demonstrates a higher Ci helps dampen the voltage spike. Figure 32(b) demonstrates the effect of
the input stray inductance Li upon the input voltage spike. Figure 32(c) shows how increased resistance helps to
suppress the input voltage spike.
35
35
Ci = 20 mF
Ci = 40 mF
30
Input Capacitor Voltage - V
Input Capacitor Voltage - V
Li = 5 mH
Ri = 0.21 W
Li = 9.3 mH
30
25
20
15
10
5
0
Li = 12 mH
Ri = 0.15 W
Ci = 40 mF
25
20
15
10
5
0
0.5
1
1.5
4
2
2.5
3
3.5
Time - ms
(a) Vc with various Ci values
4.5
0
5
0
0.5
1
1.5
2
2.5
3
3.5
Time - ms
(b) Vc with various Li values
4
4.5
5
35
Ri = 0.15 W
Li = 9.3 mH
Ci = 40 mF
Input Capacitor Voltage - V
30
Ri = 0.5 W
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
Time - ms
3.5
4
4.5
5
(c) Vc with various Ri values
Figure 32. Parametric Study Of The Input Voltage
As shown in Figure 32, minimizing the input stray inductance, increasing the input capacitance, and adding
resistance (including using higher ESR capacitors) helps suppress the input voltage spike. However, a user often
cannot control input stray inductance and increasing capacitance can increase costs. Therefore, the most
efficient and cost-effective approach is to add an external resistor.
Figure 33 depicts the recommended input filter design. The measured input voltage and current waveforms are
shown in Figure 34. The input voltage spike has been well damped by adding a 2-Ω resistor, while keeping the
capacitance low.
VIN
2W
(0.5 W, 1210 anti-surge)
2.2 mF
(25 V, 1210)
VPVCC
Rext
C1
C2
0.1 mF
(50 V, 0805, very close to PVCC)
Figure 33. Recommended Input Filter Design
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Figure 34. Adapter DC Side Hot Plug-In Test Waveforms
26
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PCB Layout Design Guideline
1. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB ground.
Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the
other layers.
2. The control stage and the power stage should be routed separately. At each layer, the signal ground and the
power ground are connected only at the power pad.
3. The AC current-sense resistor must be connected to ACP (pin 3) and ACN (pin 2) with a Kelvin contact. The
area of this loop must be minimized. An additional 0.1 µF decoupling capacitor for ACN is required to further
reduce the noise. The decoupling capacitors for these pins should be placed as close to the IC as possible.
4. The charge-current sense resistor must be connected to SRP (pin 19), SRN (pin 18) with a Kelvin contact.
The area of this loop must be minimized. An additional 0.1 µF decoupling capacitor for SRN is required to
further reduce the noise. The decoupling capacitors for these pins should be placed as close to the IC as
possible.
5. Decoupling capacitors for PVCC (pin 28), VREF (pin 10), REGN (pin 24) should be placed underneath the IC
(on the bottom layer) with the interconnections to the IC as short as possible.
6. Decoupling capacitors for BAT (pin 17), IADAPT (pin 15) must be placed close to the corresponding IC pins
with the interconnections to the IC as short as possible.
7. Decoupling capacitor CX for the charger input must be placed close to the Q4 drain and Q5 source.
Figure 35 shows the recommended component placement with trace and via locations. For the QFN information,
see the SCBA017 and SLUA271 documents.
(a) Top Layer
(b) Bottom Layer
Figure 35. Layout Example
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27
PACKAGE OPTION ADDENDUM
www.ti.com
4-Feb-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
BQ24740RHDR
ACTIVE
VQFN
RHD
28
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
BQ24740RHDRG4
ACTIVE
VQFN
RHD
28
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
BQ24740RHDT
ACTIVE
VQFN
RHD
28
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
BQ24740RHDTG4
ACTIVE
VQFN
RHD
28
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Feb-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
BQ24740RHDR
VQFN
RHD
28
3000
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
BQ24740RHDT
VQFN
RHD
28
250
180.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Feb-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ24740RHDR
VQFN
RHD
28
3000
346.0
346.0
29.0
BQ24740RHDT
VQFN
RHD
28
250
210.0
185.0
35.0
Pack Materials-Page 2
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