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BQ27Z561-R1
SLUSDH5A – MARCH 2019 – REVISED AUGUST 2019
BQ27Z561-R1 Impedance Track™ Battery Gas Gauge Solution
for 1-Series Cell Li-ion Battery Packs
1 Features
2 Applications
•
•
•
•
•
•
1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Supports current sense resistors down to 1 mΩ
Supports pack-side gauging including enhanced
state of health (SOH) algorithm
Fast QMAX update option based on predicted
OCV
SHA-256 authentication responder for increased
battery pack security
Sophisticated charge algorithms:
– JEITA
– Enhanced charging
– RSOC() charging compensation option
Two independent ADCs
– Support for simultaneous current and voltage
sampling
– High-accuracy coulomb counter with input
offset error < 1 µV (typical)
Low-voltage (2-V) operation
Wide-range current applications (1 mA to > 5 A)
Active high or low pulse or level interrupt pin
Supports battery trip point (BTP)
Reduced power modes (typical battery pack
operating range conditions)
– Typical SLEEP mode: < 11 μA
– Typical DEEP SLEEP mode: < 9 μA
– Typical OFF mode: < 1.9 μA
Internal and external temperature sense functions
Diagnostic lifetime data monitor and black box
recorder
400-kHz I2C bus communications interface for
high-speed programming and data access
HDQ one-wire for communication with host
Compact 12-pin DSBGA package (YPH)
Smartphones
Digital still and video cameras
Tablet computing
Portable and wearable health devices and
portable audio devices
3 Description
The Texas Instruments BQ27Z561-R1 Impedance
Track™ gas gauge solution is a highly integrated,
accurate 1-series cell gas gauge with a flash
programmable custom reduced instruction-set CPU
(RISC) and SHA-256 authentication for Li-Ion and LiPolymer battery packs. The 1-series cell capability
includes parallel cells for increased capacity.
The BQ27Z561-R1 gas gauge communicates via I2Ccompatible and HDQ one-wire interfaces and
includes several key features that can help facilitate
accurate gas gauging applications. Integrated
temperature sense functions (internal and external
options) enable system and battery temperature
measurements.
Device Information(1)
PART NUMBER
BQ27Z561-R1
PACKAGE
BODY SIZE (NOM)
DSBGA (12)
1.67 mm × 2.05 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
PACK+
Protector
IC
CE
SDA/HDQ
SCL
BAT_SNS
INT
BAT
+
PULS
TS
VSS
SRN SRP
PACK-
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ27Z561-R1
SLUSDH5A – MARCH 2019 – REVISED AUGUST 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Description (cont.) .................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
7.13
7.14
7.15
7.16
7.17
4
4
4
4
5
5
5
5
5
5
6
6
6
7
7
7
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Supply Current ..........................................................
Internal 1.8-V LDO (REG18).....................................
I/O (CE, PULS, INT)..................................................
Internal Temperature Sensor ....................................
NTC Thermistor Measurement Support....................
Coulomb Counter (CC) ...........................................
Analog Digital Converter (ADC) ..............................
Internal Oscillator Specifications .............................
Voltage Reference1 (REF1)....................................
Voltage Reference2 (REF2)....................................
Flash Memory .........................................................
I2C I/O .....................................................................
I2C Timing — 100 kHz ............................................
7.18 I2C Timing — 400 kHz ............................................ 7
7.19 HDQ Timing ............................................................ 8
7.20 Typical Characteristics .......................................... 10
8
Detailed Description ............................................ 10
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
10
11
11
13
Applications and Implementation ...................... 14
9.1 Application Information............................................ 15
9.2 Typical Applications ............................................... 15
10 Power Supply Requirements ............................. 17
11 Layout................................................................... 17
11.1 Layout Guidelines ................................................. 17
11.2 Layout Example .................................................... 18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
19
13 Mechanical, Packaging, Orderable
Information ........................................................... 19
4 Revision History
Changes from Original (March 2019) to Revision A
•
2
Page
Changed body size in Device Information ............................................................................................................................. 1
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5 Description (cont.)
The integrated SHA-256 functionality helps enable secure identification between systems and packs. The
interrupt and BTP functions facilitate the BQ27Z561-R1 device to inform the system when a specific state-ofcharge (SOC), voltage, or temperature condition occurs. The low-voltage operation enables the system to
continue monitoring the battery even in deeply discharged conditions. During low-activity situations, the device
can be set to the low power coulomb counting (CC) mode, which enables the device to continue its coulomb
counting while reducing operating current significantly.
6 Pin Configuration and Functions
1
2
3
D
SRP
BAT
CE
C
SRN
BAT_SNS
NU
B
TS
VSS
SCL
A
INT
PULS
SDA/HDQ
Not to scale
Pin Functions
NUMBER
(1)
NAME
I/O
P (1)
DESCRIPTION
Battery voltage measurement input. Kelvin battery sense connection to BAT_SNS. Connect a
capacitor (1 µF) between BAT and VSS. Place the capacitor close to the gauge.
D2
BAT
D3
CE
C2
BAT_SNS
AI
Battery sense
A1
INT
O
Interrupt for voltage, temperature, and state of charge (programmable active high or low)
A2
PULS
O
Programmable pulse width with active high or low option
B1
TS
AI
Temperature input for ADC
C3
NU
NU
Makes no external connection
B3
SCL
I/O
Serial clock for I2C interface; requires external pull up when used. It can be left floating if
unused.
A3
SDA/HDQ
I/O
Serial data for I2C interface and one-wire interface for HDQ (selectable); requires external pull
up when used. It can be left floating if unused.
D1
SRP
I
Analog input pin connected to the internal coulomb counter peripheral for integrating a small
voltage between SRP (positive side) and SRN
C1
SRN
I
Analog input pin connected to the internal coulomb counter peripheral for integrating a small
voltage between SRP (positive side) and SRN.
B2
VSS
P
Device ground
I
Active high chip enable
P = Power Connection, O = Digital Output, AI = Analog Input, I = Digital Input, I/O = Digital Input/Output, NU = Not Used
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
Input Voltage
MIN
MAX
UNIT
BAT
–0.3
6
V
INT, PULS, CE
–0.3
6
V
SRP, SRN, BAT_SNS
–0.3
VBAT + 0.3
V
TS
–0.3
2.1
V
SCL, SDA/HDQ
–0.3
6
V
Operating ambient temperature, TA
–40
85
°C
Operating junction temperature, TJ
–40
125
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM) on all pins, per
ANSI/ESDA/JEDEC JS-001 (1)
±1500
Charged-device model (CDM) on all pins, per JEDEC
specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM enables safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM enables safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
MIN
VBAT
Supply voltage
CBAT
External capacitor from BAT to
VSS
No operating restrictions
1
VTS
Temperature sense
NOM
2.0
MAX
5.5
UNIT
V
µF
0
1.8
V
VPULS,
Input and output pins
VINT, VCE
0
VBAT
V
VSCL,
Communication pins
VSDA/HDQ
0
VBAT
V
7.4 Thermal Information
Over-operating free-air temperature range (unless otherwise noted)
BQ27Z561-R1
THERMAL METRIC
(1)
DSBGA (YPH)
UNIT
(12 PINS)
RθJA
Junction-to-ambient thermal resistance
64.1
RθJC(top)
Junction-to-case (top) thermal resistance
59.8
RθJB
Junction-to-board thermal resistance
52.7
ψJT
Junction-to-top characterization parameter
0.3
ψJB
Junction-to-board characterization parameter
28.3
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.4
(1)
4
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
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7.5 Supply Current
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INORMAL
Standard operating Conditions
60
µA
ISLEEP
Sense resistor current below SLEEP mode threshold
11
µA
IDEEPSLEEP
Sense resistor current below DEEP SLEEP mode threshold
9
µA
IOFF
CE = VIL
0.5
µA
7.6 Internal 1.8-V LDO (REG18)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
VREG18
Regulator output voltage
VPORth
POR threshold
VPORhy
POR hysteresis
TEST CONDITIONS
Rising Threshold
MIN
TYP
MAX
1.6
1.8
2.0
V
1.7
V
1.45
UNIT
0.1
V
7.7 I/O (CE, PULS, INT)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
VIH
High-level input voltage
VREG18 = 1.8 V
VIL
Low-level input voltage low
VREG18 = 1.8 V
VOL
Output voltage low for INT/PULS
VREG18 = 1.8 V, IOL = 1 mA
CI
Input capacitance
Ilkg
Input leakage current
MIN
TYP
MAX
UNIT
1.15
V
0.50
V
0.4
V
1
µA
5
pF
7.8 Internal Temperature Sensor
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
V(TEMP)
Internal Temperature sensor
voltage drift
MIN
TYP
MAX
VTEMPP
TEST CONDITIONS
1.65
1.73
1.8
VTEMPP – VTEMPN (assured by design)
0.17
0.18
0.19
UNIT
mV/°C
7.9 NTC Thermistor Measurement Support
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
MIN
TYP
MAX
UNIT
RNTRC(PU)
PARAMETER
Internal pullup resistance
TEST CONDITIONS
14.4
18
21.6
kΩ
RNTC(DRIFT)
Resistance drift over
temperature
–250
–120
0
MIN
TYP
MAX
PPM/°C
7.10 Coulomb Counter (CC)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
V(CC_IN)
Input voltage range
–0.1
t(CC_CONV)
Conversion time
Single conversion
Effective Resolution
1 LSB
Integral nonlinearity
16-bit, Best fit over input voltage
range
Differential nonlinearity
16-bit, No missing codes
Offset error
16- bit Post-Calibration
Offset error drift
15-bit + sign, Post Calibration
Gain Error
15-bit + sign, Over input voltage
range
–22.3
–492
V
1000
ms
3.8
µV
5.2
+22.3
1.5
–2.6
UNIT
0.1
LSB
LSB
1.3
+2.6
LSB
0.04
0.07
LSB/°C
131
+492
LSB
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Coulomb Counter (CC) (continued)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
Gain Error drift
TEST CONDITIONS
MIN
15-bit + sign, Over input voltage
range
Effective input resistance
TYP
MAX
4.3
9.8
7
UNIT
LSB/°C
MΩ
7.11 Analog Digital Converter (ADC)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
VADC_TS_GPIO
Input voltage range
VBAT_MODE
Battery Input Voltage
TEST CONDITIONS
UNIT
V
VFS = VREG18 * 2
–0.2
1.44
V
16-bit, Best fit, –0.1 V to 0.8 * VREF2
Differential nonlinearity
16-bit, No missing codes
16-bit Post-Calibration
VREF2
(1)
Offset error drift
16-bit Post-Calibration
VREF2
(1)
Gain Error
16-bit, –0.1 to 0.8 * VFS
Gain Error drift
16-bit, –0.1 to 0.8 * VFS
, VFS =
–0.2
5.5
V
–8.4
+8.4
LSB
1.5
–4.2
, VFS =
–492
LSB
1.8
+4.2
LSB
0.02
0.1
LSB/°C
131
+492
2
4.5
8
Conversion time
Effective resolution
(1)
MAX
1.0
Effective input resistance
t(ADC_CONV)
TYP
–0.2
Integral nonlinearity
Offset error
MIN
VFS = VREF2
LSB
LSB/°C
MΩ
11.7
ms
14
15
bits
MIN
TYP
Factory calibration.
7.12 Internal Oscillator Specifications
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
MAX
UNIT
High Frequency Oscillator (HFO)
fHFO
Operating frequency
fHFO
HFO frequency drift
tHFOSTART
HFO start-up time
16.78
MHz
TA = –20°C to 70°C
–2.5%
2.5%
TA = –40°C to 85°C
–3.5
3.5
TA = –40°C to 85°C, oscillator
frequency within +/– 3% of nominal
frequency or a power-on reset
4
ms
Low Frequency Oscillator (LFO)
fLFO
Operating frequency
fLFO(ERR)
Frequency error
65.536
TA = –40°C to 85°C
–2.5%
kHz
+2.5%
7.13 Voltage Reference1 (REF1)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
VREF1
Internal reference voltage (1)
VREF1_DRIFT
Internal reference voltage drift
(1)
6
TEST CONDITIONS
TA = –40 °C to 85°C
MIN
TYP
MAX
UNIT
1.195
1.21
1.227
V
–80
+80
PPM/C
Used for CC and LDO
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7.14 Voltage Reference2 (REF2)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
(1)
VREF2
Internal reference voltage
VREF2_DRIFT
Internal reference voltage drift
(1)
TA = –40 °C to 85°C
MIN
TYP
MAX
1.2
1.21
1.22
–20
20
UNIT
V
PPM/°C
Used for ADC
7.15 Flash Memory
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
MIN
Data retention
Flash programming write
cycles
t(ROWPROG)
Row programming time
t(MASSERASE)
Mass-erase time
t(PAGEERASE)
TYP
10
Data Flash
MAX
UNIT
100
Years
20000
Instruction Flash
Cycles
1000
Cycles
40
µs
TA = –40°C to 85°C
40
ms
Page-erase time
TA = –40°C to 85°C
40
ms
IFLASHREAD
Flash read current
TA = –40°C to 85°C
1
mA
IFLASHWRTIE
Flash write current
TA = –40°C to 85°C
5
mA
IFLASHERASE
Flash erase current
TA = –40°C to 85°C
15
mA
7.16 I2C I/O
Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIH
High-level input voltage
SCL, SDA/HDQ, VREG18 = 1.8 V
1.26
V
VIL
Low-level input voltage low
VREG18 = 1.8 V
0.54
VOL
Low-level output voltage
IOL = 1 mA, VREG18 = 1.8 V
0.36
V
CI
Input capacitance
10
pF
Ilkg
Input leakage current
V
1
µA
7.17 I2C Timing — 100 kHz
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
SCL duty cycle = 50%
UNIT
fSCL
Clock operating frequency
tHD:STA
Start condition hold time
4.0
100
kHz
µs
tLOW
Low period of the SCL Clock
4.7
µs
tHIGH
High period of the SCL
Clock
4.0
µs
tSU:STA
Setup repeated START
4.7
µs
tHD:DAT
Data hold time (SDA input)
0
ns
tSU:DAT
Data setup time (SDA input)
tr
Clock rise time
10% to 90%
1000
ns
tf
Clock fall time
90% to 10%
300
ns
tSU:STO
Setup time STOP condition
4.0
µs
tBUF
Bus free time STOP to
START
4.7
µs
250
ns
7.18 I2C Timing — 400 kHz
PARAMETER
TEST CONDITIONS
MIN
NOM
SCL duty cycle = 50%
MAX
UNIT
fSCL
Clock operating frequency
400
tHD:STA
START condition hold time
0.6
µs
tLOW
Low period of the SCL Clock
1.3
µs
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I2C Timing — 400 kHz (continued)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
tHIGH
High period of the SCL
Clock
600
ns
tSU:STA
Setup repeated START
600
ns
tHD:DAT
Data hold time (SDA input)
0
ns
tSU:DAT
Data setup time (SDA input)
tr
Clock rise time
10% to 90%
tf
Clock fall time
90% to 10%
tSU:STO
Setup time STOP condition
0.6
µs
tBUF
Bus free time STOP to
START
1.3
µs
100
ns
300
300
ns
ns
7.19 HDQ Timing
PARAMETER
TEST CONDITIONS
MIN
NOM
tB
Break time
tBR
Break recovery time
tHW1
Host write 1 time
Host drives HDQ
tHW0
Host write 0 time
Host drives HDQ
tCYCH
Cycle time, host to device
Device drives HDQ
190
tCYCD
Cycle time, device to Host
Device drives HDQ
190
tDW1
Device write 1 time
Device drives HDQ
tDW0
Device write 0 time
Device drives HDQ
tRSPS
Device response time
tTRND
Host turn around time
tRISE
HDQ line rising time to logic
1
tRST
HDQ Reset
MAX
UNIT
190
µs
40
µs
0.5
50
µs
86
145
µs
µs
205
250
µs
32
50
µs
80
145
µs
Device drives HDQ
190
950
µs
Host drives HDQ after device drives
HDQ
250
µs
1.8
Host drives HDQ low before device
reset
2.2
µs
s
SDA
tLOW
tf
tHD;STA
tr
tf
tr
tBUF
tSP
SCL
tSU;STA
tHD;STA
tHIGH
tHD;DAT
START
tSU;STO
tSU;DAT
REPEATED
START
STOP
START
Figure 1. I2C Timing
8
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1.2V
t( R IS E )
t(BR )
t( B )
(b) H D Q line ris e tim e
(a) B reak and B reak R ec ov ery
t( D W 1 )
t(H W 1)
t(D W 0)
t(C YC D )
t(H W 0)
t( C Y C H )
(d) G auge T rans m itted B it
(c ) H os t T rans m itted B it
B reak
1 - b it
7-bit addres s
R /W
8-bit data
t( R S P S )
(e) G auge to Hos t Res pons e
t(R ST )
(f) H D Q R es et
a.
b.
c.
d.
e.
f.
H D Q B r e a k in g
R is e tim e o f H D Q lin e
H D Q H o s t to fu e l g a u g e c o m m u n ic a tio n
F u e l g a u g e to H o s t c o m m u n ic a tio n
F u e l g a u g e to H o s t r e s p o n s e fo r m a t
H D Q H o s t to fu e l g a u g e
Figure 2. HDQ Timing
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7.20 Typical Characteristics
1.8
1.21
Min
Nom
Max
1.795
1.206
LDO (V)
VREF1 (v)
1.208
1.204
1.79
1.785
1.202
1.2
-60
Min
Nom
Max
-40
BAT Min = 2 V
-20
0
20
40
Temperature (qC)
60
80
1.78
-60
100
BAT Nom = 3.6 V
BAT Max = 5 V
Figure 3. REF1 Voltage Versus Battery and Temperature
BAT Min = 2 V
60
80
100
D002
BAT Nom = 3.6 V
BAT Max = 5 V
ADVC Offset (PV)
15
65.6
LFO (kHz)
0
20
40
Temperature (qC)
20
Min
Nom
Max
65.8
65.4
65.2
10
5
0
Min
Nom
Max
-5
65
BAT Min = 2 V
-20
Figure 4. LDO Voltage Versus Battery and Temperature
66
64.8
-60
-40
D001
-40
-20
0
20
40
Temperature (qC)
60
BAT Nom = 3.6 V
80
100
-10
-60
-40
D003
BAT Max = 5 V
Figure 5. LFO Frequency Versus Battery and Temperature
BAT Min = 2 V
-20
0
20
40
Temperature (qC)
60
BAT Nom = 3.6 V
80
100
D004
BAT Max = 5 V
Figure 6. ADVC Offset Voltage Versus Battery and
Temperature
8 Detailed Description
8.1 Overview
The BQ27Z561-R1 gas gauge is a fully integrated battery manager that employs flash-based firmware to provide
a complete solution for battery-stack architectures composed of 1-series cells. The BQ27Z561-R1 device
interfaces with a host system via an I2C or HDQ protocol. High-performance, integrated analog peripherals
enable support for a sense resistor down to 1 mΩ, and simultaneous current/voltage data conversion for instant
power calculations. The following sections detail all of the major component blocks included as part of the
BQ27Z561-R1 device.
10
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8.2 Functional Block Diagram
BAT_SNS
VSS
TS
BAT
GPIO
Internal
Temp
Sensor
REG18
CE
REF1
SRP
SRN
CC
ADC MUX
ADC
REF2
HFO
LFO
INT
PULS
CC /ADC
Digital
Filter
Test
Interface
ROM
12kBytes
Timers
COM
Engine
SDA/HDQ
SCL
Data (8bit)
bqBMP
CPU
PMInstr
(8 bit)
IO and
Interrupt
Controller
DMAddr (16bit)
PMAddr
(16 bit)
Program Flash
32-kBytes
Data Flash
4-kBytes
Data SRAM
2-kBytes
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8.3 Feature Description
8.3.1 BQ27Z561-R1 Processor
The BQ27Z561-R1 device uses a custom TI-proprietary processor design that features a Harvard architecture
and operates at frequencies up to 4.2 MHz. Using an adaptive, three-stage instruction pipeline, the BQ27Z561R1 processor supports variable instruction lengths of 8, 16, or 24 bits.
8.3.2 Battery Parameter Measurements
The BQ27Z561-R1 device measures cell voltage and current simultaneously, and also measures temperature to
calculate the information related to remaining capacity, full charge capacity, state-of-health, and other gauging
parameters.
8.3.2.1 Coulomb Counter (CC)
The first ADC is an integrating analog-to-digital converter designed specifically for tracking charge and discharge
activity, or coulomb counting, of a rechargeable battery. It features a single-channel differential input that
converts the voltage difference across a sense resistor between the SRP and SRN terminals with a resolution of
3.74 µV.
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Feature Description (continued)
8.3.2.2 CC Digital Filter
The CC digital filter generates a 16-bit conversion value from the delta-sigma CC front-end. Its FIR filter uses the
HFO clock output. New conversions are available every 1 s.
8.3.2.3 ADC Multiplexer
The ADC multiplexer provides selectable connections to the external pins BAT, BAT_SNS, TS, the internal
temperature sensor, internal reference voltages, internal 1.8-V regulator, and VSS ground reference input. In
addition, the multiplexer can independently enable the TS input connection to the internal thermistor biasing
circuitry, and enables the user to short the multiplexer inputs for test and calibration purposes.
8.3.2.4 Analog-to-Digital Converter (ADC)
The second ADC is a 16-bit delta-sigma converter designed for general-purpose measurements. The ADC
automatically scales the input voltage range during sampling based on channel selection. The converter
resolution is a function of its full-scale range and number of bits, yielding a 38-µV resolution.
8.3.2.5 Internal Temperature Sensor
An internal temperature sensor is available on the BQ27Z561-R1 device to reduce the cost, power, and size of
the external components necessary to measure temperature. It is available for connection to the ADC using the
multiplexer, and is ideal for quickly determining pack temperature under a variety of operating conditions.
8.3.2.6 External Temperature Sensor Support
The TS input is enabled with an internal 18-kΩ (Typ.) linearization pull-up resistor to support the use of a 10-kΩ
(25°C) NTC external thermistor, such as the Semitec 103AT-2. The NTC thermistor should be connected
between VSS and the individual TS pin. The analog measurement is then taken via the ADC through its input
multiplexer. If a different thermistor type is required, then changes to configurations may be required.
REG18
TS
ADC
NTC
Figure 7. External Thermistor Biasing
8.3.3 Power Supply Control
The BQ27Z561-R1 device uses the BAT pin as its power source. BAT powers the internal voltage sources that
supply references for the device. BAT_SNS is a non-current carrying path and used at the Kelvin reference for
BAT.
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Feature Description (continued)
8.3.4 Bus Communication Interface
The BQ27Z561-R1 device has an I2C bus communication interface. Alternatively, the BQ27Z561-R1 can be
configured to communicate through the HDQ pin (shared with SDA).
NOTE
Once the device is switched to the HDQ protocol, it is not reversible.
8.3.5 Low Frequency Oscillator
The BQ27Z561-R1 device includes a low frequency oscillator (LFO) running at 65.536 kHz.
8.3.6 High Frequency Oscillator
The BQ27Z561-R1 includes a high frequency oscillator (HFO) running at 16.78 MHz. It is frequency locked to the
LFO output and scaled down to 8.388 MHz with a 50% duty cycle.
8.3.7 1.8-V Low Dropout Regulator
The BQ27Z561-R1 device contains an integrated capacitor-less 1.8-V LDO (REG18) that provides regulated
supply voltage for the device CPU and internal digital logic.
8.3.8 Internal Voltage References
The BQ27Z561-R1 device provides two internal voltage references. REF1 is used by REG18, oscillators, and
CC. REF2 is used by the ADC.
8.3.9 Gas Gauging
This device uses the Impedance Track™ technology to measure and determine the available charge in battery
cells. See the Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm Application
Report (SLUA450) for further details.
8.3.10 Charge Control Features
This device supports charge control features, such as:
• Reports charging voltage and charging current based on the active temperature range—JEITA temperature
ranges T1, T2, T3, T4, T5, and T6
• Provides more complex charging profiles, including sub-ranges within a standard temperature range
• Reports the appropriate charging current required for constant current charging, and the appropriate charging
voltage needed for constant voltage charging to a smart charger, using the bus communication interface
• Compensates the charging profile based on the value of RelativeStateOfCharge()
• Selects the chemical state-of-charge of each battery cell using the Impedance Track method
• Reports charging faults and indicates charge status via charge and discharge alarms
8.3.11 Authentication
This device supports security with the following features, which can be enabled if desired:
• Authentication by the host using the SHA-256 method
• The gas gauge requires SHA-256 authentication before the device can be unsealed or allow full access.
8.4 Device Functional Modes
This device supports four modes, but the current consumption varies, based on firmware control of certain
functions and modes of operation:
• NORMAL mode: In this mode, the device performs measurements, calculations, protections, and data
updates every 250-ms intervals. Between these intervals, the device is operating in a reduced power stage to
minimize total average current consumption.
• SLEEP mode: In this mode, the device performs measurements, calculations, and data updates in adjustable
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Device Functional Modes (continued)
•
•
time intervals. Between these intervals, the device is operating in a reduced power stage to minimize total
average current consumption.
DEEP SLEEP mode: In this mode, the current is reduced slightly while current and voltage are still measured
periodically, with a user-defined time between reads.
OFF mode: The device is completely disabled by pulling CE low. CE disables the internal voltage rail. All nonvolatile memory is unprotected.
8.4.1 Lifetime Logging Features
The device supports data logging of several key parameters for warranty and analysis:
• Maximum and minimum cell temperature
• Maximum current in CHARGE or DISCHARGE mode
• Maximum and minimum cell voltages
• Total run time (This data is stored with a resolution of two hours.)
• Time spent different temperature ranges (This data is stored with a resolution of two hours.)
8.4.2 Configuration
The device supports accurate data measurements and data logging of several key parameters.
8.4.2.1 Coulomb Counting
The device uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement. The ADC
measures charge/discharge flow of the battery by measuring the voltage across a very small external sense
resistor. The integrating ADC measures a bipolar signal from a range of –100 mV to 100 mV, with a positive
value when V(SRP) – V(SRN), indicating charge current and a negative value indicating discharge current.
The current measurement is performed by measuring the voltage drop across the external sense resistor, which
can be as low as 1 mΩ, and the polarity of the differential voltage determines if the cell is in the CHARGE or
DISCHARGE mode.
8.4.2.2 Cell Voltage Measurements
The BQ27Z561-R1 gas gauge measures the cell voltage at 1-s intervals using the ADC. This measured value is
internally scaled for the ADC and is calibrated to reduce any errors due to offsets. This data is also used for
calculating the impedance of the cell for Impedance Track gas gauging.
8.4.2.3 Auto Calibration
The auto-calibration feature helps to cancel any voltage offset across the SRP and SRN pins for accurate
measurement of the cell voltage, charge/discharge current, and thermistor temperature. The auto-calibration is
performed when there is no communication activity for a minimum of 5 s on the bus lines.
8.4.2.4 Temperature Measurements
This device has an internal sensor for on-die temperature measurements, and the ability to support an external
temperature measurement via the external NTC on the TS pin. These two measurements are individually
enabled and configured.
9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
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9.1 Application Information
The BQ27Z561-R1 gas gauge can be used with a 1-series Li-Ion/Li-Polymer battery pack. To implement and
design a comprehensive set of parameters for a specific battery pack, the user needs Battery Management
Studio (BQSTUDIO), which is a graphical user-interface tool installed on a PC during development. The firmware
installed in the product has default values, which are summarized in the BQ27Z561-R1 Technical Reference
Manual (SLUUBY5). Using the BQSTUDIO tool, these default values can be changed to cater to specific
application requirements during development once the system parameters, such as enable/disable of certain
features for operation, cell configuration, chemistry that best matches the cell used, and more are known. The
final flash image, which is extracted once configuration and testing are complete, will be used for mass
production and is referred to as the "golden image."
9.2 Typical Applications
The following is an example BQ27Z561-R1 application schematic for a single-cell battery pack.
PACK+
Protector
IC
CE
SDA/HDQ
Tie to CPU for
direct control
BAT_SNS
SCL
INT
BAT
1 µF
PULS
+
Battery
-
NU
TS
Thermistor
10 kŸ
VSS
SRN
SRP
0.1 PF
RSRN
100 Ÿ
PACK-
RSRP
100 Ÿ
RSENSE
1 mŸ
Figure 8. BQ27Z561-R1 1-Series Cell Typical Implementation
9.2.1 Design Requirements (Default)
Design Parameter
Example
Cell Configuration
1s1p (1 series with 1 parallel)
Design Capacity
5300 mAh
Device Chemistry
Li-Ion
Design Voltage
4000 mV
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Typical Applications (continued)
Design Parameter
Example
Cell Low Voltage
2500 mV
9.2.2 Detailed Design Procedure
9.2.2.1 Changing Design Parameters
For the firmware settings needed for the design requirements, refer to the BQ27Z561-R1 Technical Reference
Manual (SLUUBY5).
• To change design capacity, set the data flash value (in mAh) in the Gas Gauging: Design: Design Capacity
register.
• To set device chemistry, go to the data flash I2C Configuration: Data: Device Chemistry. The BQSTUDIO
software automatically populates the correct chemistry identification. This selection is derived from using the
BQCHEM feature in the tools and choosing the option that matches the device chemistry from the list.
• To set the design voltage, go to Gas Gauging: Design: Design Voltage register.
• To set the Cell Low Voltage or clear the Cell Low Voltage, use Settings: Configuration: Init Voltage Low
Set or Clear. This is used to set the cell voltage level that will set (clear) the [VOLT_LO] bit in the Interrupt
Status register.
• To enable the internal temperature and the external temperature sensors: Set Settings:Configuration:
Temperature Enable: Bit 0 (TSInt) = 1 for the internal sensor; set Bit 1 (TS1) = 1 for the external sensor.
9.2.3 Calibration Process
The calibration of current, voltage, and temperature readings is accessible by writing 0xF081 or 0xF082 to
ManufacturerAccess(). A detailed procedure is included in the BQ27Z561-R1 Technical Reference Manual
(SLUUBY5) in the Calibration section. The description allows for calibration of cell voltage measurement offset,
battery voltage, current calibration, coulomb counter offset, PCB offset, CC gain/capacity gain, and temperature
measurement for both internal and external sensors.
9.2.4 Gauging Data Updates
When a battery pack enabled with the BQ27Z561-R1 gas gauge is cycled, the value of FullChargeCapacity()
updates several times, including the onset of charge or discharge, charge termination, temperature delta,
resistance updates during discharge, and relaxation. Figure 9 shows actual battery voltage, load current, and
FullChargeCapacity() when some of those updates occur during a single application cycle.
Update points from the plot include:
• Charge termination at 7900 s
• Relaxation at 9900 s
• Resistance update at 11500 s
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9.2.4.1 Application Curve
Figure 9. Full Charge Capacity Tracking (X-Axis Is Seconds)
10 Power Supply Requirements
The only power supply is the BAT pin, which is connected to the positive terminal of the battery. The input
voltage for the BAT pin will have a minimum of 2 V to a maximum of 5 V.
11 Layout
11.1 Layout Guidelines
•
•
•
•
The quality of the Kelvin connections at the sense resistor is critical. The sense resistor must have a
temperature coefficient no greater than 50 ppm to minimize current measurement drift with temperature.
Choose the value of the sense resistor to correspond to the available overcurrent and short-circuit ranges of
the BQ27Z561-R1 gas gauge. Select the smallest value possible to minimize the negative voltage generated
on the BQ27Z561-R1 VSS node during a short circuit. This pin has an absolute minimum of –0.3 V. Parallel
resistors can be used as long as good Kelvin sensing is ensured. The device is designed to support a 1-mΩ
to 3-mΩ sense resistor.
BAT_SNS should be tied directly to the positive connection of the battery. It should not share a path with the
BAT pin.
In reference to the gas gauge circuit the following features require attention for component placement and
layout: differential low-pass filter and I2C communication.
The BQ27Z561-R1 gas gauge uses an integrating delta-sigma ADC for current measurements. Add a 100-Ω
resistor from the sense resistor to the SRP and SRN inputs of the device. Place a 0.1-μF filter capacitor
across the SRP and SRN inputs. If required for a circuit, 0.1-µF filter capacitors can be added for additional
noise filtering for each sense input pin to ground. Place all filter components as close as possible to the
device. Route the traces from the sense resistor in parallel to the filter circuit. Adding a ground plane around
the filter network can provide additional noise immunity.
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Layout Guidelines (continued)
•
•
The BQ27Z561-R1 has an internal LDO that is internally compensated and does not require an external
decoupling capacitor.
The I2C clock and data pins have integrated high-voltage ESD protection circuits; however, adding a Zener
diode and series resistor provides more robust ESD performance. The I2C clock and data lines have an
internal pull-down. When the gas gauge senses that both lines are low (such as during removal of the pack),
the device performs auto-offset calibration and then goes into SLEEP mode to conserve power.
11.2 Layout Example
No contact to NU
(BAT_SNS trace on
bottom layer)
Tab -
Tab +
RSRN
INT
PULS
SDA/
HDQ
TS
VSS
SCL
SRN
BAT_
SNS
NU
SRP
BAT
CE
Device ground reference
RSENSE
RSRP
BAT -
Weld
Tab
Weld
Tab
Battery
Sense path only
PACK +
PACK -
BAT +
BAT_SNS at
Battery terminal
Figure 10. BQ27Z561-R1 Key Trace Board Layout
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
• BQ27Z561-R1 Technical Reference Manual (SLUUBY5)
• Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm Application Report
(SLUA364)
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
Impedance Track, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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19
PACKAGE OPTION ADDENDUM
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14-Feb-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
BQ27Z561YPHR-R1
ACTIVE
DSBGA
YPH
12
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 85
Q27Z561R1
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of