BQ294502, BQ294504, BQ294506, BQ294512, BQ294522
BQ294524, BQ294532, BQ294533, BQ294534, BQ294582, BQ294592
SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
BQ2945xy Overvoltage Protection For 2-Series and 3-Series Cell Li-Ion Batteries
1 Features
3 Description
•
The BQ2945xy family of products is a secondary-level
voltage monitor and protector for Li-ion battery pack
systems. Each cell is monitored independently for
an overvoltage condition. Based on the configuration,
an output is triggered after a fixed delay if any of
the two or three cells has an overvoltage condition.
This output is triggered into a high state after an
overvoltage condition satisfies the specified delay
timer.
•
•
•
•
•
•
•
2-series and 3-series cell overvoltage monitor for
secondary protection
Fixed programmable delay timer
Fixed OVP threshold
– Available range from 3.85 V to 4.6 V
Fixed OVP delay option: 4 s or 6.5 s
High-accuracy overvoltage protection:
±10 mV
Low power consumption ICC ≈ 1 µA
(VCELL(ALL) < VPROTECT)
Low leakage current per cell input < 100 nA
Small package footprint
– 6-pin SON
Device Information
PART NUMBER(1)
BQ2945xy
(1)
2 Applications
•
PACKAGE
BODY SIZE (NOM)
SON (6)
2.00 mm × 2.00 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Second-level protection in Li-ion battery packs in:
– Tablets
– Slates
– Power tools
– Notebook computers
– Portable equipment and instrumentation
Pack +
RVD
RIN
VCELL3
RIN
VCELL2
RIN
CIN
V3
OUT
V2
VDD
CIN
V1
VSS
CVD
PWRPAD
VCELL1
CIN
Pack–
Copyright © 2017, Texas Instruments Incorporated
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ294502, BQ294504, BQ294506, BQ294512, BQ294522
BQ294524, BQ294532, BQ294533, BQ294534, BQ294582, BQ294592
www.ti.com
SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Typical Characteristics................................................ 6
8 Detailed Description........................................................7
8.1 Overview..................................................................... 7
8.2 Functional Block Diagram........................................... 7
8.3 Feature Description.....................................................7
8.4 Device Functional Modes............................................8
9 Application and Implementation.................................. 10
9.1 Application Information............................................. 10
9.2 Typical Application.................................................... 10
9.3 System Examples..................................................... 11
10 Power Supply Recommendations..............................12
11 Layout........................................................................... 12
11.1 Layout Guidelines................................................... 12
11.2 Layout Example...................................................... 12
12 Device and Documentation Support..........................13
12.1 Device Support....................................................... 13
12.2 Related Documentation.......................................... 13
12.3 Receiving Notification of Documentation Updates..13
12.4 Support Resources................................................. 13
12.5 Trademarks............................................................. 13
12.6 Electrostatic Discharge Caution..............................13
12.7 Glossary..................................................................13
13 Mechanical, Packaging, and Orderable
Information.................................................................... 13
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision J (June 2022) to Revision K (August 2022)
Page
• Changed the BQ294534 device to Production Data...........................................................................................3
• Changed the BQ294534 device to Production Data in the Electrical Characteristics ........................................5
Changes from Revision I (May 2021) to Revision J (June 2022)
Page
• Added the PRODUCT PREVIEW BQ294534 device......................................................................................... 3
• Added the PRODUCT PREVIEW BQ294534 device to the Electrical Characteristics ...................................... 5
Changes from Revision H (December 2017) to Revision I (May 2021)
Page
• Changed the BQ294506 device to Production Data...........................................................................................3
Changes from Revision G (November 2017) to Revision H (December 2017)
Page
• Added the BQ294506 device..............................................................................................................................3
• Added the BQ294506 device to the Electrical Characteristics .......................................................................... 5
2
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SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
5 Device Comparison Table
TA
PART NUMBER
OVP (V)
DELAY TIME (s)
BQ294502
4.35
4
BQ294504
4.35
6.5
BQ294506
4.38
4
BQ294512
4.4
4
BQ294522
4.45
4
BQ294524
4.45
6.5
BQ294532
4.5
4
BQ294533
4.5
6.5
BQ294534
4.55
4
BQ294582
4.225
4
BQ294592
4.3
4
–40°C to +110°C
6 Pin Configuration and Functions
V3
1
6
OUT
V2
2 Thermal 5
Pad
VDD
3
V1
VSS
4
Not to scale
Figure 6-1. DRV Package 6-Pin SON Top View
Table 6-1. Pin Functions
(1)
NUMBER
NAME
TYPE(1)
1
V3
IA
Sense input for positive voltage of the third cell from the bottom of the stack.
2
V2
IA
Sense input for positive voltage of the second cell from the bottom of the stack.
3
VSS
P
Electrically connected to IC ground and negative terminal of the lowest cell in the stack.
4
V1
IA
Sense input for positive voltage of the lowest cell in the stack.
5
VDD
P
Power supply
6
OUT
OA1
—
PWRPAD
—
DESCRIPTION
Output drive for external N-channel FET.
VSS pin to be connected to the PWRPAD on the printed-circuit-board (PCB) for proper
operation.
IA = Input Analog, OA = Output Analog, P = Power Connection
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3
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SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) (2)
Supply voltage
Input voltage
Output voltage
MIN
MAX
UNIT
VDD–VSS
–0.3
30
V
V1–VSS or V2–VSS or V3–VSS+
–0.3
30
V
V3–V2 or V2–V1
–0.3
8
V
OUT–VSS
–0.3
30
V
Continuous total power dissipation, PTOT
See Section 7.4.
Lead temperature (soldering, 10 s), TSOLDER
Storage temperature, Tstg
(1)
(2)
–65
300
°C
150
°C
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and
this may affect device reliability, functionality, performance, and shorten the device lifetime.
See Figure 8-3.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (1)
Input voltage
V3–V2 or V2–V1 or V1–VSS
Operating ambient temperature, TA
(1)
MIN
MAX
UNIT
3
25
V
0
5
V
–40
110
°C
See Section 9.2.
7.4 Thermal Information
BQ2945xy
THERMAL METRIC(1)
DRV (SON)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
186.4
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
90.4
°C/W
RθJB
Junction-to-board thermal resistance
110.7
°C/W
ψJT
Junction-to-top characterization parameter
96.7
°C/W
ψJB
Junction-to-board characterization parameter
90
°C/W
RθJC(bot)
Junction-to-case(bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics Application
Report.
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BQ294502, BQ294504, BQ294506, BQ294512, BQ294522
BQ294524, BQ294532, BQ294533, BQ294534, BQ294582, BQ294592
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SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
7.5 Electrical Characteristics
Typical values stated where TA = 25°C and VDD = 10.8 V, MIN/MAX values stated where TA = –40°C to +110°C and VDD =
3 V to 15 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOLTAGE PROTECTION THRESHOLD VCx
VOV
BQ294502, fixed delay 4 s
4.35
BQ294504, fixed delay 6.5 s
4.35
BQ294506, fixed delay 4 s
4.38
BQ294512, fixed delay 4 s
4.4
BQ294522, fixed delay 4 s
V(PROTECT) –
BQ294524, fixed delay 6.5 s
Overvoltage Detection
BQ294532, fixed delay 4 s
4.45
BQ294533, fixed delay 6.5 s
4.5
4.55
BQ294582, fixed delay 4 s
4.225
BQ294592, fixed delay 4 s
4.3
VHYS
VOA
OV Detection Accuracy
TA = 25°C, BQ2945xy
TA = 25°C, BQ294506 only
TA = –40°C
TA = 0°C
OV Detection Accuracy T = 60°C
A
due to Temperature
TA = 110°C
TA = 10°C to 45°C, BQ294506 only
V
4.5
BQ294534, fixed delay 4 s
Overvoltage Detection
VHYS
Hysteresis
VOA –DRIFT
4.45
250
300
–10
400
mV
10
mV
–7
7
mV
–40
–20
–24
–54
44
20
24
54
mV
–15
15
mV
SUPPLY AND LEAKAGE CURRENT
ICC
IIN
Supply Current
Input Current at Vx
Pins
(V3–V2) = (V2–V1) = (V1–VSS) = 4 V (See Figure 8-3
for reference.)
1
µA
(V3–V2) = (V2–V1) = (V1–VSS) = 2.8 V with TA =
–40°C to 60°C
Measured at V3, V2, and V1 = 4 V
(V2–V1) = (V1–VSS) = 4 V
TA = 0°C to 60°C (See Figure 8-3 for reference.)
2
1.25
–0.1
0.1
µA
OUTPUT DRIVE OUT
(V3–V2) or (V2–V1) or (V1–VSS) > VOV
VDD = 7.2 V, IOH = 100 µA, TA = –40°C to +110°C
VOUT
Output Drive Voltage
6
Two of the three cells are short circuit and only one
cell is powered
(V3–V2) or (V2–V1) or (V1–VSS) > VOV
VDD = Vx (Cell voltage), IOH = 100 µA, TA = –40°C to
+110°C
VDD – 0.2
(V3–V2), (V2–V1), and (V1–VSS) < VOV, IOL = 100
µA, TA = 25°C
TA = –40°C to +110°C
IOUT(Short)
OUT Short Circuit
Current
OUT = 0 V (V3–V2) or (V2–V1) or (V1–VSS) > VOV
tR
Output Rise Time
CL = 1 nF, VOH(OUT) = 0 V to 5 V(1)
ZO
Output Impedance
V
250
V
400
mV
4.5
mA
5
µs
2
5
kΩ
FIXED DELAY TIMER
tDELAY
Fault Detection Delay
Time
Fixed Delay, BQ2945xy with delay set to 4s typ
3.2
4
4.8
Fixed Delay, BQ2945xy with delay set to 6.5 s
5.2
6.5
7.8
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5
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SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
7.5 Electrical Characteristics (continued)
Typical values stated where TA = 25°C and VDD = 10.8 V, MIN/MAX values stated where TA = –40°C to +110°C and VDD =
3 V to 15 V (unless otherwise noted).
PARAMETER
tDELAY_CTM
(1)
TEST CONDITIONS
Fault Detection Delay
Time in Test Mode
MIN
Fixed Delay (Internal settings)
TYP
MAX
15
UNIT
ms
Specified by design. It is not 100% tested in production.
7.6 Typical Characteristics
1.3
4.38
4.37
Overvoltage Threshold (V)
ICC Current (PA)
1.2
1.1
1
0.9
0.8
0.7
-40
Min
Max
Mean
4.36
4.35
4.34
4.33
4.32
-20
0
20
40
60
Temperature (qC)
80
100
4.31
-40
120
D001
Figure 7-1. ICC Current Consumption vs
Temperature
-20
0
20
40
60
Temperature (qC)
80
100
120
D002
Figure 7-2. BQ294502 Overvoltage Threshold
(OVT) vs Temperature
325
-3.85
324
-3.9
Output Current (mA)
Hysteresis (mV)
323
322
321
320
319
318
-3.95
-4
-4.05
317
316
315
-40
-20
0
20
40
60
Temperature (qC)
80
100
120
D003
Figure 7-3. Hysteresis VHYS vs Temperature
6
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-4.1
-40
-20
0
20
40
60
Temperature (qC)
80
100
120
D004
Figure 7-4. Output Current IOUT vs Temperature
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SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
8
3-Cell Data
2-Cell Data
7.5
Output Voltage (V)
7
6.5
6
5.5
5
4.5
4
0
100
200
300
400 500 600 700
Output Current (PA)
800
900 1000
D005
Figure 7-5. Output Voltage vs Output Current
8 Detailed Description
8.1 Overview
The BQ2945xy is a second-level overvoltage (OV) protector. Each cell is monitored independently by comparing
the actual cell voltage to a protection voltage threshold, VOV. The protection threshold is preprogrammed at the
factory with a range from 3.85 V to 4.65 V.
8.2 Functional Block Diagram
PACK+
R VD
CVD
VDD
RIN
V3
CIN
V2
RIN
CIN
V1
RIN
Multiplexer Switch Network
REG
INT_EN
VOV
Delay
Timer
OUT
OSC
CIN
VSS
PWRPAD
PACK–
Copyright © 2017, Texas Instruments Incorporated
8.3 Feature Description
The voltage sensing for each cell is done independently using a multiplexer. The method of overvoltage
detection is comparing the voltage to an overvoltage protection voltage VOV. Once the voltage exceeds the
programmed fixed value, the delay timer circuit is activated. This delay (tDELAY) is fixed for either a 4-s or 6.5-s
delay. When these conditions are satisfied, the OUT terminal is transitioned to a high level. This output (OUT) is
released to a low condition if all of the cell inputs (Vx) are below the OVP threshold minus the Vhys.
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7
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Cell Voltage (V)
(V3 –V2, V2 – V1, V1–VSS)
SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
VOV
VOV –VHYS
tDELAY
OUT (V)
Figure 8-1. Timing for Overvoltage Sensing
8.3.1 Sense Positive Input for VX
This is an input to sense each single battery cell voltage. A series resistor and a capacitor across the cell for
each input is required for noise filtering and stable voltage monitoring.
8.3.2 Output Drive, OUT
The gate of an external N-channel MOSFET is connected to this terminal. This output transitions to a high level
when an overvoltage condition is detected and after the programmed delay timer. OUT resets to a low level if the
cell voltage falls below the VOV threshold before the fixed delay timer expires.
8.3.3 Supply Input, VDD
This terminal is the unregulated input power source for the IC. A series resistor is connected to limit the current,
and a capacitor is connected to ground for noise filtering.
8.3.4 Thermal Pad, PWRPAD
For correct operation, the power pad (PWRPAD) is connected to the VSS terminal on the PCB.
8.4 Device Functional Modes
8.4.1 NORMAL Mode
When all of the cell voltages are below the overvoltage threshold, VOV, the device operates in NORMAL mode.
The device monitors the differential cell voltages connected across (V1–VSS), (V2–V1) and (V3–V2). The OUT
pin is inactive in this mode.
8.4.2 OVERVOLTAGE Mode
OVERVOLTAGE mode is detected if any of the cell voltages exceeds the overvoltage threshold, VOV for the
configured OV delay time, tDELAY. The OUT pin pulls high internally. An external FET then turns on, shorting the
fuse to ground, which enables the battery or charger power to blow the fuse. When all of the cell voltages fall
below (VOV–VHYS), the device returns to NORMAL mode.
8.4.3 Customer Test Mode
Customer Test Mode (CTM) helps to reduce test time for checking the overvoltage delay timer parameter once
the circuit is implemented in the battery pack. To enter CTM, set VDD to at least 10 V higher than V3 (see Figure
8-2). The delay timer is greater than 10 ms, but considerably shorter than the timer delay in normal operation.
To exit CTM, remove the VDD to VC3 voltage differential of 10 V so that the decrease in this value automatically
causes an exit.
8
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SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
CAUTION
Avoid exceeding any Absolute Maximum Voltages on any pins when placing the part into CTM. Also
avoid exceeding Absolute Maximum Voltages for the individual cell voltages (V3–V2), (V2–V1), and
(V1–VSS). Stressing the pins beyond the rated limits may cause permanent damage to the device.
Cell Voltage (V)
(V3)
VDD – V3 (V)
Figure 8-2 shows the timing for CTM.
10 V
VOV
VOV – VHYS
t DELAY > 10 ms
OUT (V)
Figure 8-2. Timing for Customer Test Mode
Figure 8-3 shows the measurement for current consumption for the product for both VDD and Vx.
bq2945xx
IIN
3.6 V
IIN
3.6 V
IIN
3.6 V
1
V3
OUT
6
2
V2
VDD
5
V1
4
3 VSS
I CC
PWRPAD
Figure 8-3. Configuration for IC Current Consumption Test
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The BQ2945xy devices are second-level protectors used for overvoltage protection for the battery pack in the
application. The device, when configuring the OUT pin with active high, drives an NMOS FET that connects the
fuse to ground in the event of a fault condition. This provides a shorted path to use the battery or charger power
to blow the fuse and cut the power path.
9.2 Typical Application
Pack +
RVD
RIN
VCELL3
RIN
VCELL2
RIN
CIN
V3
OUT
V2
VDD
CIN
CVD
V1
VSS
PWRPAD
VCELL1
CIN
Pack–
Copyright © 2017, Texas Instruments Incorporated
Figure 9-1. Application Configuration Schematic
9.2.1 Design Requirements
Changes to the ranges stated in Table 9-1 impact the accuracy of the cell measurements. Figure 9-1 shows each
external component.
Table 9-1. Parameters
PARAMETER
EXTERNAL COMPONENT
MIN
TYP
MAX
Voltage monitor filter resistance
RIN
100
1000
4700
Ω
Voltage monitor filter capacitance
CIN
0.1
1
µF
Supply voltage filter resistance
RVD
100
Supply voltage filter capacitance
CVD
1K
0.1
UNIT
Ω
µF
9.2.2 Detailed Design Procedure
1. Determine the overvoltage threshold and delay time. Select the proper device from the table in Section 5 or
contact TI for a different configuration.
2. Determine the number of cell in series. The device supports 2-series to 3-series cell configurations. For a
2-series configuration, the V3 pin is shorted to V2.
3. To connect to the device, follow the application configuration schematic (see Figure 9-1).
10
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9.2.3 Application Curves
325
4.38
324
323
4.36
Hysteresis (mV)
Overvoltage Threshold (V)
4.37
Min
Max
Mean
4.35
4.34
4.33
322
321
320
319
318
317
4.32
316
4.31
-40
-20
0
20
40
60
Temperature (qC)
80
100
315
-40
120
-20
D002
Figure 9-2. OVT vs Temperature
0
20
40
60
Temperature (qC)
80
100
120
D003
Figure 9-3. VHYS vs Temperature
9.3 System Examples
Pack +
100
bq2945xx
1k
VCELL3
VCELL2
V3
OUT
V2
VDD
1k 0.1µF
1k
0.1µF
VSS
VCELL1
V1
0.1 µF
PWRPAD
0.1µF
Pack –
Figure 9-4. 3-Series Cell Configuration with Fixed Delay
Pack +
100
bq2945xx
V3
OUT
V2
VDD
1k
VCELL2
1k
0.1 µF
VSS
VCELL1
V1
0.1µF
PWRPAD
0.1µF
Pack –
Figure 9-5. 2-Series Cell Configuration with Internal Fixed Delay
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: BQ294502 BQ294504 BQ294506 BQ294512 BQ294522 BQ294524 BQ294532
BQ294533 BQ294534 BQ294582 BQ294592
11
BQ294502, BQ294504, BQ294506, BQ294512, BQ294522
BQ294524, BQ294532, BQ294533, BQ294534, BQ294582, BQ294592
www.ti.com
SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
10 Power Supply Recommendations
The maximum power of this device is 25 V on VDD.
11 Layout
11.1 Layout Guidelines
•
•
•
Ensure the RC filters for the V1 and VDD pins are placed as close as possible to the target terminal, reducing
the tracing loop area.
Route the VSS pin to the CELL– terminal.
Ensure the trace connecting the fuse to the gate, source of the NFET to the Pack– is sufficient to withstand
the current during a fuse blown event.
11.2 Layout Example
Place the RC filters close to the
device terminals
Power Trace Line
Pack +
NC
OUT
VDD
V2
Pack ±
PWPD
VCELL
VSS
VSS
Ensure trace can support sufficient current
flow for fuse blow
Connect the VSS pins to the CELL- side
Figure 11-1. Layout Schematic
12
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: BQ294502 BQ294504 BQ294506 BQ294512 BQ294522 BQ294524 BQ294532
BQ294533 BQ294534 BQ294582 BQ294592
BQ294502, BQ294504, BQ294506, BQ294512, BQ294522
BQ294524, BQ294532, BQ294533, BQ294534, BQ294582, BQ294592
www.ti.com
SLUSAJ3K – SEPTEMBER 2011 – REVISED AUGUST 2022
12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Related Documentation
•
Semiconductor and IC Package Thermal Metrics Application Report
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2022 Texas Instruments Incorporated
Submit Document Feedback
Product Folder Links: BQ294502 BQ294504 BQ294506 BQ294512 BQ294522 BQ294524 BQ294532
BQ294533 BQ294534 BQ294582 BQ294592
13
PACKAGE OPTION ADDENDUM
www.ti.com
19-Sep-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
BQ294502DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4502
Samples
BQ294502DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4502
Samples
BQ294504DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4504
Samples
BQ294504DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4504
Samples
BQ294506DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4506
Samples
BQ294506DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4506
Samples
BQ294512DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
4512
Samples
BQ294512DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4512
Samples
BQ294522DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
4522
Samples
BQ294522DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4522
Samples
BQ294524DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4524
Samples
BQ294524DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4524
Samples
BQ294532DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4532
Samples
BQ294532DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4532
Samples
BQ294533DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4533
Samples
BQ294533DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4533
Samples
BQ294534DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 110
4534
Samples
BQ294582DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4582
Samples
BQ294582DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4582
Samples
BQ294592DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
4592
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
19-Sep-2023
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
RoHS & Green
NIPDAU
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
BQ294592DRVT
ACTIVE
WSON
DRV
6
250
Level-1-260C-UNLIM
-40 to 85
4592
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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