BQ2947
SLUSB15J – SEPTEMBER 2012 – REVISED MAY 2021
BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries
with External Delay Capacitor
1 Features
3 Description
•
•
•
The BQ2947 family is an overvoltage monitor and
protector for Li-Ion battery pack systems. Each cell is
monitored independently for an overvoltage condition.
•
•
•
•
•
2-, 3-, and 4-series cell overvoltage protection
External capacitor-programmed delay timer
Factory programmed OVP threshold (threshold
range 3.85 V to 4.6 V)
Output options: active high or open drain active
low
High-accuracy overvoltage protection: ±10 mV
Low power consumption ICC ≈ 1 µA
(VCELL(ALL) < VPROTECT)
Low leakage current per cell input < 100 nA
Small package footprint
– 8-pin WSON (2.00 mm x 2.00 mm)
2 Applications
•
•
In the BQ2947 device, an external delay timer is
initiated upon detection of an overvoltage condition on
any cell. Upon expiration of the delay timer, the output
is triggered into its active state (either high or low,
depending on the configuration). The external delay
timer feature also includes the ability to detect an
open or shorted delay capacitor on the CD pin, which
will similarly trigger the output driver in an overvoltage
condition.
For quicker production-line testing, the BQ2947
device provides a Customer Test Mode with 67
reduced delay time.
Notebooks
UPS battery backup
Device Information
PART
NUMBER(1)
BQ294700
(1)
PACKAGE
BODY SIZE (NOM)
WSON (8)
2.00 mm × 2.00 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Pack+
100 Ω
VCELL4
VCELL3
VCELL2
1k
0.1µF
1k
0.1µF
1k
OUT
VDD
1k
0.1µF
V4
CD
V3
VSS
V2
V1
PWPD
0.1 µF
VCELL1
0.1 µF
0.1µF
Pack–
Copyright © 2017, Texas Instruments Incorporated
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ2947
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 5
7.1 Absolute Maximum Ratings........................................ 5
7.2 ESD Ratings............................................................... 5
7.3 Recommended Operating Conditions.........................5
7.4 Thermal Information....................................................5
7.5 Electrical Characteristics.............................................6
7.6 Typical Characteristics................................................ 7
8 Detailed Description........................................................9
8.1 Overview..................................................................... 9
8.2 Functional Block Diagram........................................... 9
8.3 Feature Description.....................................................9
8.4 Device Functional Modes..........................................11
9 Application and Implementation.................................. 13
9.1 Application Information............................................. 13
9.2 Typical Applications.................................................. 13
10 Power Supply Recommendations..............................16
11 Layout........................................................................... 16
11.1 Layout Guidelines................................................... 16
11.2 Layout Example...................................................... 16
12 Device and Documentation Support..........................17
12.1 Third-Party Products Disclaimer............................. 17
12.2 Documentation Support.......................................... 17
12.3 Receiving Notification of Documentation Updates..17
12.4 Support Resources................................................. 17
12.5 Trademarks............................................................. 17
12.6 Electrostatic Discharge Caution..............................17
12.7 Glossary..................................................................17
13 Mechanical, Packaging, and Orderable
Information.................................................................... 17
4 Revision History
Changes from Revision I (June 2018) to Revision J (May 2021)
Page
• Updated the BQ294712 and BQ294713 devices in the Device Options table ...................................................3
Changes from Revision H (February 2018) to Revision I (June 2018)
Page
• Added BQ294713 to the Device Options table .................................................................................................. 3
• Added BQ294713 to the Electrical Characteristics ............................................................................................6
Changes from Revision G (November 2017) to Revision H (February 2018)
Page
• Changed BQ294712 to Production Data in the Device Options table ............................................................... 3
2
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5 Device Comparison Table
PART NUMBER
OVP (V)
OV HYSTERESIS
OUTPUT DRIVE
BQ294700
4.350
0.300
CMOS Active High
BQ294701
4.250
0.300
CMOS Active High
BQ294702
4.300
0.300
CMOS Active High
BQ294703
4.325
0.300
CMOS Active High
BQ294704
4.400
0.300
CMOS Active High
BQ294705
4.450
0.300
CMOS Active High
BQ294706
4.550
0.300
CMOS Active High
BQ294707
4.225
0.050
NCH Open Drain Active Low
BQ294708
4.500
0.300
CMOS Active High
BQ294711
4.220
0.300
CMOS Active High
BQ294712
4.125
0.300
CMOS Active High
BQ294713
4.600
0.300
CMOS Active High
BQ2947
3.850–4.60
0–0.300
CMOS Active High or Open Drain Active Low
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6 Pin Configuration and Functions
VDD
1
V4
2
V3
3
V2
4
Thermal
Pad
8
OUT
7
CD
6
VSS
5
V1
Not to scale
Figure 6-1. DSG Package 8-Pin WSON Top View
Table 6-1. Pin Functions
NUMBER
NAME
TYPE(1)
1
VDD
P
Power supply input
2
V4
IA
Sense input for positive voltage of the fourth cell from the bottom of the stack
3
V3
IA
Sense input for positive voltage of the third cell from the bottom of the stack
4
V2
IA
Sense input for positive voltage of the second cell from the bottom of the stack
5
V1
IA
Sense input for positive voltage of the lowest cell in the stack
6
VSS
P
Electrically connected to IC ground and negative terminal of the lowest cell in the stack
7
CD
OA
OUT
OA
8
PowerPAD™
(1)
4
DESCRIPTION
P
External capacitor connection for delay timer
Analog Output drive for overvoltage fault signal. Active High or Open Drain Active Low
TI recommends connecting the exposed pad to VSS on the PCB.
IA = Input Analog, OA = Output Analog, P = Power Connection
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VDD–VSS
–0.3
30
V
Input voltage
V4–V3, V3–V2, V2–V1, V1–VSS, or CD–VSS
–0.3
30
V
Output voltage
OUT–VSS
–0.3
30
V
Supply voltage
Continuous total power dissipation, PTOT
See Section 7.4
Lead temperature (soldering, 10 s), TSOLDER
300
Storage temperature, Tstg
(1)
–65
°C
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
UNIT
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
V
±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
Over-operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD
Input voltage range
V4–V3, V3–V2, V2–V1, V1–VSS, or CD–VSS
Operating ambient temperature range, TA
MIN
MAX
UNIT
3
20
V
0
5
V
–40
110
°C
7.4 Thermal Information
BQ2947
THERMAL
METRIC(1)
WSON
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
62
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
72
°C/W
RθJB
Junction-to-board thermal resistance
32.5
°C/W
ψJT
Junction-to-top characterization parameter
1.6
°C/W
ψJB
Junction-to-board characterization parameter
33
°C/W
RθJC(bottom)
Junction-to-case(bottom) thermal resistance
10
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
Typical values stated where TA = 25°C and VDD = 14.4V, MIN/MAX values stated where TA = –40°C to +110°C and VDD = 3
V to 20 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VOLTAGE PROTECTION THRESHOLDS
V(PROTECT) Overvoltage
Detection
VOV
BQ294700, RIN = 1 kΩ
4.350
V
BQ294701, RIN = 1 kΩ
4.250
V
BQ294702, RIN = 1 kΩ
4.300
V
BQ294703, RIN = 1 kΩ
4.325
V
BQ294704, RIN = 1 kΩ
4.400
V
BQ294705, RIN = 1 kΩ
4.450
V
BQ294706, RIN = 1 kΩ
4.550
V
BQ294707, RIN = 1 kΩ
4.225
V
BQ294708, RIN = 1 kΩ
4.500
V
BQ294711, RIN = 1 kΩ
4.220
V
BQ294712, RIN = 1 kΩ
4.125
V
BQ294713, RIN = 1 kΩ
4.600
V
VHYS
OV Detection Hysteresis BQ2947(1)
250
400
mV
VOA
OV Detection Accuracy
TA = 25°C
–10
10
mV
TA = –40°C
–40
40
mV
TA = 0°C
–20
20
mV
TA = 60°C
–24
24
mV
TA = 110°C
–54
54
mV
2
µA
0.1
µA
VOADRIFT
OV Detection Accuracy
Across Temperature
300
SUPPLY AND LEAKAGE CURRENT
IDD
Supply Current
(V4–V3) = (V3–V2) = (V2–V1) = (V1–VSS) = 4.0 V
at TA = 25°C (See Figure 8-4.)
IIN
Input Current at Vx Pins
(V4–V3) = (V3–V2) = (V2–V1) = (V1–VSS) = 4.0 V
at TA = 25°C (See Figure 8-4.)
ICELL
Input Current (ALL Vx
and VDD Input Pins)
Current Consumption at Power down, (V4–V3) =
(V3–V2) = (V2–V1) = (V1–VSS) = 2.30 V at TA =
25°C
1
–0.1
1.1
µA
OUTPUT DRIVE OUT, CMOS ACTIVE HIGH VERSIONS ONLY
(V4–V3), (V3–V2), (V2–V1), or (V1–VSS) > VOV,
VDD = 14.4 V, IOH = 100 µA
VOUT
Output Drive Voltage,
Active High
6
If three of four cells are short circuited, only one
cell remains powered and > VOV, VDD = Vx (cell
voltage), IOH = 100 µA
VDD – 0.3
(V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV,
VDD = 14.4 V, IOL = 100 µA measured into OUT
pin.
IOUTH
OUT Source Current
(during OV)
(V4–V3), (V3–V2), (V2–V1), or (V1–VSS) > VOV,
VDD = 14.4 V,
OUT = 0 V, measured out of OUT pin.
IOUTL
OUT Sink Current (no
OV)
(V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV,
VDD = 14.4 V,
OUT = VDD, measured into OUT pin .Pull resistor
RPU = 5 kΩ to VDD = 14.4 V
V
250
0.5
V
400
mV
4.5
mA
14
mA
400
mV
OUTPUT DRIVE OUT, CMOS OPEN DRAIN ACTIVE LOW VERSIONS ONLY
VOUT
6
Output Drive Voltage,
Active High
(V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV,
VDD = 14.4 V, IOL = 100 µA measured into OUT
pin.
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7.5 Electrical Characteristics (continued)
Typical values stated where TA = 25°C and VDD = 14.4V, MIN/MAX values stated where TA = –40°C to +110°C and VDD = 3
V to 20 V (unless otherwise noted).
PARAMETER
TEST CONDITIONS
IOUTL
OUT Sink Current (no
OV)
(V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV,
VDD = 14.4 V,
OUT = VDD, measured into OUT pin. Pull resistor
RPU = 5 kΩ to VDD = 14.4 V
MIN
IOUTLK
OUT pin leakage
(V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV,
VDD = 14.4 V,
OUT = VDD, measured into OUT pin.
TYP
0.5
MAX UNIT
14
mA
100
nA
DELAY TIMER
tCD
OV Delay Time
CCD = 0.1 µF (see External Delay Capacitor, CD)
1
tCD_GND
OV Delay Time with CD
pin = 0 V
Delay due to CCD capacitor shorted to ground for
Customer Test Mode
20
(1)
1.5
2
170
s
ms
Future option, contact TI.
7.6 Typical Characteristics
Figure 7-1. Overvoltage Threshold (Nominal = 4.35
V) vs. Temperature
Figure 7-2. Hysteresis VHYS vs. Temperature
Figure 7-3. IDD Current Consumption vs.
Temperature at VDD = 16 V
Figure 7-4. ICELL vs. Temperature
at VCELL= 9.2 V
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Figure 7-5. Output Current IOUT vs.
Temperature
8
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Figure 7-6. VOUT vs. VDD
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8 Detailed Description
8.1 Overview
The BQ2947 is a second level overvoltage (OV) protector. Each cell is monitored independently by comparing
the actual cell voltage to a protection voltage threshold, VOV. The protection threshold is preprogrammed at the
factory with a range between 3.85 V and 4.65 V.
8.2 Functional Block Diagram
The Functional Block Diagram shows a CMOS Active High configuration.
PACK+
RVD
CVD
VDD
1
RIN
V4
2
RIN
V3
3
CIN
RIN
V2
4
Sensing Circuit
CIN
VOV
Enable
OUT
Active
Delay Charge/
Discharge Circuit
CIN
RIN
V1
8
5
CIN
VSS
6
PWPD
9
7
CD
CCD
PACK–
Note
In the case of an Open Drain Active Low configuration, an external pull-up resistor is required on the
OUT terminal.
8.3 Feature Description
In the BQ2947 family of devices, if any cell voltage exceeds the programmed OV value, a timer circuit is
activated. This timer circuit charges the CD pin to a nominal value, then slowly discharges it with a fixed current
back down to VSS. When the CD pin falls below a nominal threshold near VSS, the OUT terminal goes from
inactive to active state. Additionally, a timeout detection circuit checks to ensure that the CD pin successfully
begins charging to above VSS and subsequently drops back down to VSS, and if a timeout error is detected in
either direction, it will similarly trigger the OUT pin to become active. See Figure 8-2 for details on CD and OUT
pin behavior during an overvoltage event.
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Cell Voltage (V)
(V4–V3, V3
3 –V2, V2 – V1, V1–VSS)
For an NCH Open Drain Active Low configuration, the OUT pin pulls down to VSS when active (OV present) and
is high impedance when inactive (no OV).
VOV
VOV –VHYS
tCD
OUT (V)
Figure 8-1. Timing for Overvoltage Sensing (OUT Pin Is Active High)
Figure 8-2 shows the behavior of CD pin during an OV sequence.
Fault condition
present
Fault response
becomes active
VCD
V(CD)
tCHGDELAY
tCD
VOUT1
V(OUT)
Note: Active High OUT version shown
Figure 8-2. CD Pin Mechanism (OUT Pin Is Active High)
Note
In the case of an Open Drain Active Low version, the VOUT signal will be high and transition to low
state when the voltage on the VCD capacitor discharges to the set level based on the tCD timer.
10
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8.3.1 Pin Details
8.3.1.1 Input Sense Voltage, Vx
These inputs sense each battery cell voltage. A series resistor and a capacitor across the cell for each input is
required for noise filtering and stable voltage monitoring.
8.3.1.2 Output Drive, OUT
This terminal serves as the fault signal output, and may be ordered in either Active High or Open Drain Active
Low options.
8.3.1.3 Supply Input, VDD
This terminal is the unregulated input power source for the IC. A series resistor is connected to limit the current,
and a capacitor is connected to ground for noise filtering.
8.3.1.4 External Delay Capacitor, CD
This terminal is connected to an external capacitor that sets the delay timer during an overvoltage fault event.
The CD pin includes a timeout detection circuit to ensure that the output drives active even with a shorted or
open capacitor during an overvoltage event.
The capacitor connected on the CD pin rapidly charges to a voltage if any one of the cell inputs exceeds the
OV threshold. Then the delay circuit gradually discharges the capacitor on the CD pin. Once this capacitor
discharges below a set voltage, the OUT transitions from an inactive to active state.
To calculate the delay, use the following equation:
tCD (sec) = K × CCD (µF), where K = 10 to 20 range.
(1)
Example: If CCD= 0.1 µF (typical), then the delay timer range is
tCD (s) = 10 × 0.1 = 1 s (Minimum)
tCD (s) = 20 × 0.1 = 2 s (Maximum)
Note
The tolerance on the capacitor used for CCD increases the range of the tCD timer.
8.4 Device Functional Modes
8.4.1 NORMAL Mode
When all of the cell voltages are below the overvoltage threshold, VOV, the device operates in NORMAL mode.
The device monitors the differential cell voltages connected across (V1–VSS), (V2–V1), (V3–V2), and (V4–V3).
The OUT pin is inactive, and is low if configured active high, or, if configured active low, is an open drain being
externally pulled up.
8.4.2 OVERVOLTAGE Mode
OVERVOLTAGE mode is detected if any of the cell voltage exceeds the overvoltage threshold, VOV for
configured OV delay time. The OUT pin is activated after a delay time set by the capacitance in the CD pin. The
OUT pin will either pull high internally, if configured as active high, or will be pulled low internally if configured
as active low. An external FET is then turned on, shorting the fuse to ground, which allows the battery and/or
charger power to blow the fuse. When all of the cell voltages fall below the (VOV–VHYS), the device returns to
NORMAL mode.
8.4.3 Customer Test Mode
It is possible to reduce test time for checking the overvoltage function by simply shorting the external CD
capacitor to VSS. In this case, the OV delay would be reduced to the t(CD_GND) value, which has a maximum of
170 ms.
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Figure 8-3 shows the timing for the Customer Test Mode.
OV Condition
V(VCELL)
≤ 170 ms
V(OUT)
CD pin held low
V(CD)
Figure 8-3. Timing for Customer Test Mode
Figure 8-4 shows the measurement for current consumption of the product for both VDD and Vx.
IDD
1 VDD
IIN4
I IN3
OUT 8
2 V4
CD 7
3 V3
VSS 6
4 V2
V1 5
ICELL
IIN2
IIN1
ICELL = IDD + IIN1 + I IN2 + IIN3 + I IN4
Figure 8-4. Configuration for IC Current Consumption Test
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The BQ2947 devices are a family of second-level protectors used for overvoltage protection of the battery pack
in the application. The device, when configuring the OUT pin with active high, drives a NMOS FET that connects
the fuse to ground in the event of a fault condition. This provides a shorted path to use the battery and/or charger
power to blow the fuse and cut the power path. The OUT pin, when configured as active low, can be used to
drive a PMOS FET to connect the fuse to ground instead.
9.2 Typical Applications
9.2.1 Application Configuration for Active High
Figure 9-1 shows the recommended reference design components.
Pack+
100 Ω
VCELL4
VCELL3
VCELL2
1k
0.1µF
1k
0.1µF
1k
OUT
VDD
1k
0.1µF
V4
CD
V3
VSS
V2
V1
PWPD
0.1 µF
VCELL1
0.1 µF
0.1µF
Pack–
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Figure 9-1. Application Configuration for Active High
9.2.1.1 Design Requirements
Note
In the case of an Open Drain Active Low configuration, an external pull-up resistor is required on the
OUT terminal.
Changes to the ranges stated in Table 9-1 will impact the accuracy of the cell measurements.
Table 9-1. Parameters
PARAMETER
EXTERNAL COMPONENT
MIN
NOM
MAX UNIT
Voltage monitor filter resistance
RIN
900
1000
4700
Ω
Voltage monitor filter capacitance
CIN
0.01
0.1
1.0
µF
100
Supply voltage filter resistance
RVD
1000
Ω
Supply voltage filter capacitance
CVD
0.1
1.0
µF
CD external delay capacitance
CCD
0.1
1.0
µF
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Note
The device is calibrated using an RIN value = 1 kΩ. Using a value other than this recommended value
changes the accuracy of the cell voltage measurements and VOV trigger level.
9.2.1.2 Detailed Design Procedure
1. Determine the number of cell in series.
The device supports 2-S to 4-S cell configuration. For 2S and 3S, the top unused pin(s) should be shorted as
shown in Figure 9-2 and Figure 9-3.
2. Determine the overvoltage protection delay.
Follow the calculation example described in CD pin description. Select the right capacitor to connect to the
CD pin.
3. Follow the application schematic to connect the device. If the OUT pin is configured to open drain, an
external pull up resistor should be used.
Pack+
100 Ω
VDD
1k
VCELL2
0.1µF
0.1µF
1k
OUT
V4
CD
V3
VSS
V2
V1
PWPD
VCELL1
0.1µF
0.1µF
0.1µF
Pack–
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Figure 9-2. 2-Series Cell Configuration
Pack+
100 Ω
OUT
VDD
1k
VCELL3
1k
VCELL2
1k
0.1µF
V4
CD
V3
VSS
V2
0.1µF
V1
PWPD
0.1µF
VCELL1
0.1µF
0.1µF
Pack–
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Figure 9-3. 3-Series Cell Configuration
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9.2.1.3 Application Curves
Figure 9-4. Overvoltage Threshold (OVT) vs.
Temperature
Figure 9-5. Hysteresis VHYS vs. Temperature
Figure 9-6. IDD Current Consumption vs.
Temperature at VDD = 16 V
Figure 9-7. VOUT vs. VDD
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10 Power Supply Recommendations
The maximum power of this device is 20 V on VDD.
11 Layout
11.1 Layout Guidelines
1. Ensure the RC filters for the Vx pins and VDD pin are placed as close as possible to the target terminal,
reducing the tracing loop area.
2. The capacitor for CD should be placed close to the IC terminals.
3. Ensure the trace connecting the fuse to the gate, source of the NFET to the Pack– is sufficient to withstand
the current during fuse blown event.
11.2 Layout Example
Place the RC filters close to the
device terminals
Power Trace Line
VDD
OUT
V4
CD
V3
Pack +
VSS
Pack -
PWPD
VCELL3
V2
V1
VCELL2
VCELL1
Ensure trace can support sufficient current
flow for fuse blow
Figure 11-1. Layout Example
16
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: BQ2947
BQ2947
www.ti.com
SLUSB15J – SEPTEMBER 2012 – REVISED MAY 2021
12 Device and Documentation Support
12.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see BQ2945xy and BQ2947xy Cascade Voltage Monitoring (SLUA662).
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.5 Trademarks
PowerPAD™ and TI E2E™ are trademarks of Texas Instruments.
All trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: BQ2947
17
PACKAGE OPTION ADDENDUM
www.ti.com
19-Nov-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
BQ294700DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
700
Samples
BQ294700DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
700
Samples
BQ294701DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
701
Samples
BQ294701DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
701
Samples
BQ294702DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
702
Samples
BQ294702DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
702
Samples
BQ294703DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
703
Samples
BQ294703DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
703
Samples
BQ294704DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
704
Samples
BQ294704DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
704
Samples
BQ294705DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
705
Samples
BQ294705DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
705
Samples
BQ294706DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
706
Samples
BQ294706DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
706
Samples
BQ294707DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
707
Samples
BQ294707DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
707
Samples
BQ294708DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
Call TI | NIPDAU
Level-2-260C-1 YEAR
-40 to 85
708
Samples
BQ294708DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
Call TI | NIPDAU
Level-2-260C-1 YEAR
-40 to 85
708
Samples
BQ294711DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
711
Samples
BQ294711DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
711
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
19-Nov-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
BQ294712DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 110
712
Samples
BQ294712DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 110
712
Samples
BQ294713DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 110
713
Samples
BQ294713DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 110
713
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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