BQ29700DSER

BQ2970, BQ2971, BQ2972, BQ2973 SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for SingleCell Li-Ion and Li-Polymer Batteries 1 Features 2 Applications • • • • • • • • • • Tablet PCs Mobile handsets Handheld data terminals 3 Description The BQ2970 battery cell protection device provides an accurate monitor and trigger threshold for overcurrent protection during high discharge/charge current operation or battery overcharge conditions. The BQ2970 device provides the protection functions for Li-ion/Li-polymer cells, and monitors across the external power FETs for protection due to high charge or discharge currents. In addition, there is overcharge and depleted battery monitoring and protection. These features are implemented with low current consumption in NORMAL mode operation. Device Information PART NUMBER BQ2970, BQ2971, BQ2972, BQ2973 (1) BODY SIZE (NOM) WSON (6) 1.50 mm × 1.50 mm 0.0 PACK + NC V– COUT BAT DOUT VSS 2.2k 330 CELLP CELLN PACK– PACKAGE(1) For all available packages, see the orderable addendum at the end of the data sheet. D S CHG S DSG Simplified Schematic OCD Detection Accuracy (mV) • 0.1 µF • Input voltage range pack+: VSS – 0.3 V to 12 V FET drive: – CHG and DSG FET drive output Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5 mV (typical) Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge overcurrent detection (OCC) – Discharge overcurrent detection (OCD) – Load short-circuit detection (SCP) Zero voltage charging for depleted battery Factory programmed fault protection thresholds – Fault detection voltage thresholds – Fault trigger timers – Fault recovery timers Modes of operation without battery charger enabled – NORMAL mode ICC = 4 µA – Shutdown Iq = 100 nA Operating temperature range TA = –40°C to +85°C Package: – 6-pin DSE (1.50 mm × 1.50 mm × 0.75 mm) ±0.5 ±1.0 ±1.5 ±2.0 ±2.5 ±3.0 ±3.5 ±4.0 ±40 ±20 0 20 40 60 Temperature (ƒC) 80 100 120 C012 OCD Detection Accuracy Versus Temperature An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Device Comparison Table...............................................3 6 Pin Configuration and Functions...................................3 6.1 Pin Descriptions.......................................................... 4 7 Specifications.................................................................. 4 7.1 Absolute Maximum Ratings........................................ 4 7.2 ESD Ratings............................................................... 4 7.3 Recommended Operating Conditions.........................5 7.4 Thermal Information....................................................5 7.5 DC Characteristics...................................................... 5 7.6 Programmable Fault Detection Thresholds................ 6 7.7 Programmable Fault Detection Timer Ranges............6 7.8 Typical Characteristics................................................ 7 8 Parameter Measurement Information.......................... 10 8.1 Timing Charts............................................................10 8.2 Test Circuits.............................................................. 12 8.3 Test Circuit Diagrams................................................14 9 Detailed Description......................................................14 9.1 Overview................................................................... 14 9.2 Functional Block Diagram......................................... 15 9.3 Feature Description...................................................15 9.4 Device Functional Modes..........................................15 10 Application and Implementation................................ 19 10.1 Application Information........................................... 19 10.2 Typical Application.................................................. 19 11 Power Supply Recommendations..............................22 12 Layout...........................................................................22 12.1 Layout Guidelines................................................... 22 12.2 Layout Example...................................................... 22 13 Device and Documentation Support..........................23 13.1 Related Documentation.......................................... 23 13.2 Support Resources................................................. 23 13.3 Trademarks............................................................. 23 13.4 Electrostatic Discharge Caution..............................23 13.5 Glossary..................................................................23 14 Mechanical, Packaging, and Orderable Information.................................................................... 23 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision G (December 2018) to Revision H (June 2021) Page • Changed the BQ29728 and BQ29737 devices to Production Data....................................................................3 Changes from Revision F (December 2018) to Revision G (January 2020) Page • Changed the Device Comparison Table ............................................................................................................ 3 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 5 Device Comparison Table PART NUMBER(1) OVP (V) OVP DELAY (s) UVP (V) UVP DELAY (ms) OCC (V) OCC DELAY (ms) OCD (V) OCD DELAY (ms) SCD (V) SCD DELAY (µs) BQ29700 4.275 1.25 2.800 144 –0.100 8 0.100 20 0.5 250 BQ29701 4.280 1.25 2.300 144 –0.100 8 0.125 8 0.5 250 BQ29702 4.350 1 2.800 96 –0.155 8 0.160 16 0.3 250 BQ29703 4.425 1.25 2.300 20 –0.100 8 0.160 8 0.5 250 BQ29704 4.425 1.25 2.500 20 –0.100 8 0.125 8 0.5 250 BQ29705 4.425 1.25 2.500 20 –0.100 8 0.150 8 0.5 250 BQ29706 3.850 1.25 2.500 144 –0.150 8 0.200 8 0.6 250 BQ29707 4.280 1 2.800 96 –0.090 6 0.090 16 0.3 250 BQ29716 4.425 1.25 2.300 20 –0.100 8 0.165 8 0.5 250 BQ29717 4.425 1.25 2.500 20 –0.100 8 0.130 8 0.5 250 BQ29718 4.425 1.25 2.500 20 –0.100 8 0.100 8 0.5 250 BQ29723 4.425 1 2.500 96 –0.060 4 0.100 8 0.3 250 BQ29728 4.280 1.25 2.800 144 –0.100 8 0.150 8 0.5 250 BQ29729 4.275 1.25 2.300 20 –0.100 8 0.130 8 0.5 250 BQ29732 4.280 1.25 2.500 144 –0.100 8 0.190 8 0.5 250 BQ29733 4.400 1.25 2.800 20 –0.100 8 0.120 8 0.3 250 BQ29737 4.250 1 2.800 96 –0.050 16 0.100 16 0.3 250 3.85–4.6 0.25, 1, 1.25, 4.5 2.0–2.8 20, 96, 125, 144 –0.045 to –0.155 0.090–0.200 8, 16, 20, 48 0.3, 0.4, 0.5, 0.6 250 BQ297xy (1) 4, 6, 8, 16 All of the protections have a recovery delay time. The recovery timer starts as soon as the fault is triggered. The device starts to check for a recovery condition only when the recovery timer expires. This is NOT a delay time between recovery condition to FETs recovery. OVP recovery delay = 12 ms; UVP/OCC/OCD recovery delay = 8 ms. 6 Pin Configuration and Functions NC 1 6 V– COUT 2 5 BAT DOUT 3 4 VSS Figure 6-1. DSE Package 6-PIN WSON Top View Table 6-1. Pin Functions PIN NAME TYPE NO. DESCRIPTION BAT 5 P VDD pin COUT 2 O Gate Drive Output for Charge FET DOUT 3 O Gate Drive Output for Discharge FET NC 1 NC VSS 4 P V– 6 I/O No Connection (electrically open, do not connect to BAT or VSS) Ground pin Input pin for charger negative voltage Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 3 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 6.1 Pin Descriptions 6.1.1 Supply Input: BAT This pin is the input supply for the device and is connected to the positive terminal of the battery pack. A 0.1-µF input capacitor is connected to ground for filtering noise. 6.1.2 Cell Negative Connection: VSS This pin is an input to the device for cell negative ground reference. Internal circuits associated with cell voltage measurements and overcurrent protection input to differential amplifier for either Vds sensing or external sense resistor sensing will be referenced to this node. 6.1.3 Voltage Sense Node: V– This is a sense node used for measuring several fault detection conditions, such as overcurrent charging or overcurrent discharging configured as Vds sensing for protection. This input, in conjunction with VSS, forms the differential measurement for the stated fault detection conditions. A 2.2-kΩ resistor is connected between this input pin and Pack– terminal of the system in the application. 6.1.4 Discharge FET Gate Drive Output: DOUT This pin is an output to control the discharge FET. The output is driven from an internal circuitry connected to the BAT supply. This output transitions from high to low when a fault is detected, and requires the DSG FET to turn OFF. A 5-MΩ high impedance resistor is connected from DOUT to VSS for gate capacitance discharge when the FET is turned OFF. 6.1.5 Charge FET Gate Drive Output: COUT This pin is an output to control the charge FET. The output is driven from an internal circuitry connected to the BAT supply. This output transitions from high to low when a fault is detected, and requires the CHG FET to turn OFF. A 5-MΩ high impedance resistor is connected from COUT to Pack– for gate capacitance discharge when FET is turned OFF. 7 Specifications 7.1 Absolute Maximum Ratings MIN(1) Supply control and input Input voltage: BAT UNIT –0.3 12 V V– pin(pack–) BAT – 28 BAT + 0.3 V DOUT (Discharge FET Output), GDSG (Discharge FET Gate Drive) VSS – 0.3 BAT + 0.3 V BAT – 28 BAT + 0.3 V –40 85 °C –55 150 °C FET drive and protection COUT (Charge FET Output), GCHG (Charge FET Gate Drive) Operating temperature: TFUNC Storage temperature, Tstg (1) MAX Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods can affect device reliability. 7.2 ESD Ratings VALUE VESD (1) (1) (2) (3) 4 Electrostatic Discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS–001, all pins(2) ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(3) ±500 UNIT V Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as 1000 V can have higher performance. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 250 V can have higher performance. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 7.3 Recommended Operating Conditions MIN Supply control and input FET drive and protection Temperature Ratings MAX UNIT Positive input voltage: BAT –0.3 8 V Negative input voltage: V– BAT – 25 BAT V VSS BAT V BAT – 25 BAT V Discharge FET control: DOUT Charge FET control: COUT Operating temperature: TAmb –40 85 °C Storage temperature: TS –55 150 °C Lead temperature (soldering 10 s) 300 °C Thermal resistance junction to ambient, θJA 250 °C/W 7.4 Thermal Information BQ297xx THERMAL METRIC(1) UNIT DSE (WSON) 12 PINS RθJA, High K Junction-to-ambient thermal resistance RθJC(top) RθJB ψJT Junction-to-top characterization parameter ψJB RθJC(bottom) (1) 190.5 °C/W Junction-to-case(top) thermal resistance 94.9 °C/W Junction-to-board thermal resistance 149.3 °C/W 6.4 °C/W Junction-to-board characterization parameter 152.8 °C/W Junction-to-case(bottom) thermal resistance N/A °C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 DC Characteristics Typical Values stated where TA = 25°C and BAT = 3.6 V. Min/Max values stated where TA = –40°C to 85°C, and BAT = 3 V to 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Current consumption VBAT Device operating range BAT – VSS 1.5 8 BAT – V– 1.5 28 INORMAL Current consumption in NORMAL mode BAT = 3.8 V, V– = 0 V IPower_down Current consumption in power down mode BAT = V– = 1.5 V 4 V 5.5 µA 0.1 µA 0.5 V FET Output, DOUT and COUT VOL Charge FET low output IOL = 30 µA, BAT = 3.8 V 0.4 VOH Charge FET high output IOH = –30 µA, BAT = 3.8 V VOL Discharge FET low output IOL = 30 µA, BAT = 2 V VOH Discharge FET high output IOH = –30 µA, BAT = 3.8 V 3.4 3.7 VBAT = 1.8 V, V– = 0 V 100 300 3.4 3.7 0.2 V 0.5 V V Pullup Internal Resistance on V– RV–D Resistance between V– and VBAT 550 kΩ 24 µA Current sink on V– IV–S Current sink on V– to VSS VBAT = 3.8 V 8 Load short detection on V– Vshort Short detection voltage VBAT – 1V VBAT = 3.8 V and RPackN = 2.2 kΩ V 0-V battery charge function V0CHG 0-V battery charging start voltage 0-V battery charging function allowed Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 1.7 V Submit Document Feedback 5 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 7.5 DC Characteristics (continued) Typical Values stated where TA = 25°C and BAT = 3.6 V. Min/Max values stated where TA = –40°C to 85°C, and BAT = 3 V to 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 0.75 V 0-V battery charge inhibit function 0-V battery charging inhibit voltage threshold V0INH 0-V battery charging function disallowed 7.6 Programmable Fault Detection Thresholds PARAMETER CONDITION MIN TYP MAX UNIT TA = 25°C –10 10 mV TA = 0°C to 60°C –20 20 mV Overcharge release hysteresis 100 mV and (VSS – V–) > OCC (min) for release, TA = voltage 25°C –20 20 mV VUVP Over-discharge detection voltage Factory Device Configuration: 2.00 V to 2.80 V in 50-mV steps, TA = 25°C –50 50 mV VUVP+Hys Over-discharge release hysteresis voltage 100 mV and (BAT – V–) > 1 V for release, TA = 25°C –50 50 mV Discharging overcurrent detection voltage Factory Device Configuration: 90 mV to 200 mV in 5-mV steps TA = 25°C –10 10 mV VOCD TA = –40°C to 85°C –15 15 mV Release of VOCD Release of discharging overcurrent detection voltage Release when BAT – V– > 1 V VOCC TA = 25°C Charging overcurrent detection Factory Device Configuration: –45 mV to TA = –40°C to voltage –155 mV in 5-mV steps 85°C Release of VOCC Release of overcurrent detection voltage Release when VSS – V– ≥ OCC (min) VSCC Short Circuit detection voltage Factory Device Configuration: 300 mV, 400 mV, 500 mV, 600 mV VSCCR Release of Short Circuit detection voltage Release when BAT – V– ≥ 1 V VOVP Overcharge detection voltage VOVP–Hys Factory Device Configuration: 3.85 V to 4.60 V in 50-mV steps 1 V –10 10 mV –15 15 mV 40 TA = 25°C –100 mV 100 1 mV V 7.7 Programmable Fault Detection Timer Ranges PARAMETER 6 MAX UNIT tOVPD Overcharge detection delay time Factory Device Configuration: 0.25 s, 1 s, 1.25 s, 4.5 s CONDITION –20% 20% s tUVPD Over-discharge detection delay time Factory Device Configuration: 20 ms, 96 ms, 125 ms, 144 ms –20% 20% ms tOCDD Discharging overcurrent detection delay time Factory Device Configuration: 8 ms, 16 ms, 20 ms, 48 ms –20% 20% ms tOCCD Charging overcurrent detection delay time Factory Device Configuration: 4 ms, 6 ms, 8 ms, 16 ms –20% 20% ms tSCCD Short Circuit detection delay time 250 µs (fixed) –50% 50% µs Submit Document Feedback MIN TYP Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 7.8 Typical Characteristics 6 0.050 0.040 Current Consumption ( A) Current Consumption ( A) 0.045 0.035 0.030 0.025 0.020 0.015 0.010 5 4 3 2 1 0.005 0.000 0 ±40 ±20 0 20 40 60 80 100 Temperature (ƒC) 120 ±40 20 40 60 80 100 120 C002 VBAT = 3.9 V Figure 7-1. 1.5-V IBAT Versus Temperature Figure 7-2. 3.9-V IBAT Versus Temperature 1.34 ±1.32 1.32 ±1.34 V(±) ± BAT Voltage (V) Internal Oscillator Frequency (kHz) 0 Temperature (ƒC) VBAT = 1.5 V 1.30 1.28 1.26 1.24 1.22 ±1.36 ±1.38 ±1.40 ±1.42 ±1.44 1.20 1.18 ±1.46 ±40 ±20 0 20 40 60 80 100 Temperature (ƒC) 120 ±40 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 20 20 40 60 80 100 Temperature (ƒC) 120 C004 Figure 7-4. 0-V Charging Allowed Versus Temperature OVP Deetction Threshold Accuracy (mV) 0.75 ±20 0 VBAT, Setting = 0 V Figure 7-3. Internal Oscillator Frequency Versus Temperature ±40 ±20 C003 FOSC, Setting = 1.255 kHz BAT ± VSS Voltage (V) ±20 C001 40 60 Temperature (ƒC) 80 100 120 4 2 0 ±2 ±4 ±6 ±8 ±10 ±12 ±40 ±20 0 Figure 7-5. 0-V Charging Disallowed Versus Temperature 20 40 60 Temperature (ƒC) C005 80 100 120 C006 OVP, Setting = 4.275 V Figure 7-6. OVP Detection Accuracy Versus Temperature Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 7 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 UVP Detection Accuracy Threshold (mV) OVP Detection Delay Time (ms) 1350 1300 1250 1200 1150 1100 ±40 ±20 0 20 40 60 80 100 Temperature (ƒC) 0 ±2 ±4 ±6 ±8 ±10 ±12 120 ±40 40 60 80 100 120 C008 Figure 7-8. UVP Detection Accuracy Versus Temperature 0.0 OCC Detection Accuracy (mV) 160 UVP Detection Delay Time (ms) 20 UVP, Setting = 2.800 V Figure 7-7. OVP Detection Dely Time Versus Temperature 155 150 145 140 135 130 ±0.2 ±0.4 ±0.6 ±0.8 ±1.0 ±1.2 ±1.4 ±1.6 ±1.8 ±40 ±20 0 20 40 60 80 100 Temperature (ƒC) 120 ±40 ±20 0 20 40 60 80 100 Temperature (ƒC) C009 tUVPD, Setting = 144 ms 120 C010 VOCC, Setting = –100 mV Figure 7-9. UVP Detection Delay Time Versus Temperature Figure 7-10. OCC Detection Accuracy Versus Temperature 8.6 0.0 8.4 ±0.5 OCD Detection Accuracy (mV) OCC Detection Delay Time (ms) 0 Temperature (ƒC) tOVPD, Setting = 1.25 s 8.2 8.0 7.8 7.6 7.4 7.2 7.0 ±1.0 ±1.5 ±2.0 ±2.5 ±3.0 ±3.5 ±4.0 ±40 ±20 0 20 40 60 Temperature (ƒC) 80 100 120 ±40 ±20 0 20 40 60 Temperature (ƒC) C011 tOCCD, Setting = 8 ms 80 100 120 C012 VOCD, Setting = 100 mV Figure 7-11. OCC Detection Delay Time Versus Temperature 8 ±20 C007 Figure 7-12. OCD Detection Accuracy Versus Temperature Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 22.5 4.5 22.0 4.0 SCC Detection Accuracy (mV) OCD Detection Delay Time (ms) www.ti.com 21.5 21.0 20.5 20.0 19.5 19.0 18.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ±40 ±20 0 20 40 60 80 100 120 Temperature (ƒC) ±40 ±20 20 40 60 80 100 Temperature (ƒC) tUVPD, Setting = 20 ms 120 C014 VSCC, Setting = 500 mV Figure 7-13. OCD Detection Delay Time Versus Temperature Figure 7-14. SCC Detection Accuracy Versus Temperature 1.24 3.795 1.22 3.790 1.20 3.785 1.18 VOH (V) Power On Reset Threshold (V) 0 C013 1.16 3.780 3.775 1.14 3.770 1.12 1.10 3.765 ±40 ±20 0 20 40 60 80 100 120 Temperature (ƒC) ±40 ±20 0 20 40 60 Temperature (ƒC) C015 Figure 7-15. Power On Reset Versus Temperature 80 100 120 C016 VBAT, Setting = 3.9 V Figure 7-16. COUT Versus Temperature with Ioh = –30 µA 3.7160 VOH (V) 3.7155 3.7150 3.7145 3.7140 3.7135 ±40 ±20 0 20 40 60 80 100 120 Temperature (ƒC) C017 VBAT, Setting = 3.9 V Figure 7-17. DOUT Versus Temperature with Ioh = –30 µA Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 9 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 8 Parameter Measurement Information 8.1 Timing Charts Normal Overcharge Normal OverDischarge Normal DOUT BAT VOVP VOVP– Hys VUVP – Hys VUVP BAT COUT VSS BAT VSS V– PACK– BAT VOCD VSS PACK– t UVPD tOVPD Charger Connected Load Connected Charger Connected Figure 8-1. Overcharge Detection, Over-Discharge Detection 10 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 Normal Discharge Overcurrent Normal Discharge Overcurrent Normal BAT VOVP VOVP–Hys VUVP+Hys DOUT VUVP BAT COUT VSS BAT VSS V– PACK– BAT VSCC VOCD VSS t OCDD t SCCD Load Connected Load Disconnected Load ShortCircuit Figure 8-2. Discharge Overcurrent Detection Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 11 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 8.2 Test Circuits The following tests are referenced as follows: The COUT and DOUT outputs are “H,” which are higher than the threshold voltage of the external logic level FETs and regarded as ON state. “L” is less than the turn ON threshold for external NMOS FETs and regarded as OFF state. The COUT pin is with respect to V–, and the DOUT pin is with respect to VSS. 1. Overcharge detection voltage and overcharge release voltage (Test Circuit 1): The overcharge detection voltage (VOVP) is measured between the BAT and VSS pins, respectively. Once V1 is increased, the over-detection is triggered, and the delay timer expires. Then, COUT transitions from a high to low state and reduces the V1 voltage to check for the overcharge hysteresis parameter (VOVP-Hys). The delta voltage between overcharge detection voltages (VOVP) and the overcharge release occurs when the CHG FET drive output goes from low to high. 2. Over-discharge detection voltage and over-discharge release voltage (Test Circuit 2): Over-discharge detection (VUVP) is defined as the voltage between BAT and VSS at which the DSG drive output goes from high to low by reducing the V1 voltage. V1 is set to 3.5 V and gradually reduced while V2 is set to 0 V. The over-discharge release voltage is defined as the voltage between BAT and VSS at which the DOUT drive output transition from low to high when V1 voltage is gradually increased from a VUVP condition. The overcharge hysteresis voltage is defined as the delta voltage between VUVP and the instance at which the DOUT output drive goes from low to high. 3. Discharge overcurrent detection voltage (Test Circuit 2): The discharge overcurrent detection voltage (VOCD) is measured between V– and VSS pins and triggered when the V2 voltage is increased above VOCD threshold with respect to VSS. This delta voltage once satisfied will trigger an internal timer tOCDD before the DOUT output drive transitions from high to low. 4. Load short circuit detection voltage (Test Circuit 2): Load short-circuit detection voltage (VSCC) is measured between V– and VSS pins and triggered when the V2 voltage is increased above VSCC threshold with respect to VSS within 10 µs. This delta voltage, once satisfied, triggers an internal timer tSCCD before the DOUT output drive transitions from high to low. 5. Charge overcurrent detection voltage (Test Circuit 2): The charge overcurrent detection voltage (VOCC) is measured between VSS and V– pins and triggered when the V2 voltage is increased above VOCC threshold with respect to V–. This delta voltage, once satisfied, triggers an internal timer tOCCD before the COUT output drive transitions from high to low. 6. Operating current consumption (Test Circuit 2): The operating current consumption IBNORMAL is the current measured going into the BAT pin under the following conditions: V1 = 3.9 V and V2 = 0 V. 7. Power down current consumption (Test Circuit 2): The operating current consumption IPower_down is the current measured going into the BAT pin under the following conditions: V1 = 1.5 V and V2 = 1.5 V. 8. Resistance between V– and BAT pin (Test Circuit 3): Measure the resistance (RV_D) between V– and BAT pins by setting the following conditions: V1 = 1.8 V and V2 = 0 V. 9. Current sink between V– and VSS (Test Circuit 3): Measure the current sink IV–S between V– and VSS pins by setting the following condition: V1 = 4 V. 10. COUT current source when activated High (Test Circuit 4): Measure ICOUT current source on the COUT pin by setting the following conditions: V1 = 3.9 V, V2 = 0 V, and V3 = 3.4 V. 11. COUT current sink when activated Low (Test Circuit 4): Measure ICOUT current sink on COUT pin by setting the following conditions: V1 = 4.5 V, V2 = 0 V, and V3 = 0.5 V. 12. DOUT current source when activated High (Test Circuit 4): 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 Measure IDOUT current source on DOUT pin by setting the following conditions: V1 = 3.9 V, V2 = 0 V, and V3 = 3.4 V. 13. DOUT current sink when activated Low (Test Circuit 4): Measure IDOUT current sink on DOUT pin by setting the following conditions: V1 = 2.0 V, V2 = 0 V, and V3 = 0.4 V. 14. Overcharge detection delay (Test Circuit 5): The overcharge detection delay time tOVPD is the time delay before the COUT drive output transitions from high to low once the voltage on V1 exceeds the VOVP threshold. Set V2 = 0 V and then increase V1 until BAT input exceeds the VOVP threshold, then check the time for when COUT goes from high to low. 15. Over-discharge detection delay (Test Circuit 5): The over-discharge detection delay time tUVPD is the time delay before the DOUT drive output transitions from high to low once the voltage on V1 decreases to VUVP threshold. Set V2 = 0 V and then decrease V1 until BAT input reduces to the VUVPthreshold, then check the time of when DOUT goes from high to low. 16. Discharge overcurrent detection delay (Test Circuit 5): The discharge overcurrent detection delay time tOCDD is the time for DOUT drive output to transition from high to low after the voltage on V2 is increased from 0 V to 0.35 V. V1 = 3.5 V and V2 starts from 0 V and increases to trigger threshold. 17. Load short circuit detection delay (Test Circuit 5): The load short-circuit detection delay time tSCCD is the time for DOUT drive output to transition from high to low after the voltage on V2 is increased from 0 V to V1 – 1 V. V1 = 3.5 V and V2 starts from 0 V and increases to trigger threshold. 18. Charge overcurrent detection delay (Test Circuit 5): The charge overcurrent detection delay time tOCCD is the time for COUT drive output to transition from high to low after the voltage on V2 is decreased from 0 V to –0.3 V. V1 = 3.5 V and V2 starts from 0 V and decreases to trigger threshold. 19. 0-V battery charge starting charger voltage (Test Circuit 2): The 0-V charge for start charging voltage V0CHA is defined as the voltage between BAT and V– pins at which COUT goes high when voltage on V2 is gradually decreased from a condition of V1 = V2 = 0 V. 20. 0-V battery charge inhibition battery voltage (Test Circuit 2): The 0-V charge inhibit for charger voltage V0INH is defined as the voltage between BAT and VSS pins at which COUT should go low as V1 is gradually decreased from V1 = 2 V and V2 = –4 V. Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 13 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 8.3 Test Circuit Diagrams 1 6 V- NC V- 6 COUT BAT 5 DOUT VSS 4 1 NC 2 3 I BAT 220Ω V COUT V 2 COUT BAT 5 3 DOUT VSS 4 V COUT V V1 V V V2 A V1 V V DOUT Figure 8-3. Test Circuit 1 DOUT Figure 8-4. Test Circuit 2 I V- 1 V- NC 6 A I A BAT 2 COUT BAT 5 3 DOUT VSS 4 I A V- 6 COUT BAT 5 DOUT VSS 4 1 NC 2 3 COUT V2 V2 I DOUT V3 A V1 V1 V4 Figure 8-6. Test Circuit 4 Figure 8-5. Test Circuit 3 NC V- 6 2 COUT BAT 5 3 DOUT VSS 4 1 Oscilloscope Oscilloscope V2 V1 Figure 8-7. Test Circuit 5 9 Detailed Description 9.1 Overview This BQ2970 device is a primary protector for a single-cell Li-ion/Li-polymer battery pack. The device uses a minimum number of external components to protect for overcurrent conditions due to high discharge/charge currents in the application. In addition, it monitors and helps to protect against battery pack overcharging or depletion of energy in the pack. The BQ2970 device is capable of having an input voltage of 8 V from a charging adapter and can tolerate a voltage of BAT – 25 V across the two input pins. In the condition when a fault is triggered, there are timer delays before the appropriate action is taken to turn OFF either the CHG or DSG FETs. The recovery period also has a timer delay once the threshold for recovery condition is satisfied. These parameters are fixed once they are programmed. There is also a feature called zero voltage charging that enables depleted cells to be charged to an acceptable level before the battery pack can be used for normal operation. Zero voltage charging is allowed if the charger voltage is above 1.7 V. For Factory Programmable Options, see Table 9-1. Table 9-1. Factory Programmable Options PARAMETER FACTORY DEVICE CONFIGURATION VOVP Overcharge detection voltage 3.85 V to 4.60 V in 50-mV steps VUVP Over-discharge detection voltage 2.00 V to 2.80 V in 50-mV steps VOCD Discharging overcurrent detection voltage 90 mV to 200 mV in 5-mV steps VOCC Charging overcurrent detection voltage –45 mV to –155 mV in 5-mV steps VSCC Short Circuit detection voltage 300 mV, 400 mV, 500 mV, 600 mV tOVPD Overcharge detection delay time 0.25 s, 1.00 s, 1.25 s, 4.50 s tUVPD Over-discharge detection delay time 20 ms, 96 ms, 125 ms, 144 ms 14 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 Table 9-1. Factory Programmable Options (continued) PARAMETER FACTORY DEVICE CONFIGURATION tOCDD Discharging overcurrent detection delay time 8 ms, 16 ms, 20 ms, 48 ms tOCCD Charging overcurrent detection delay time 4 ms, 6 ms, 8 ms, 16 ms tSCCD Short Circuit detection delay time 250 µs (fixed) For available released devices, see the Released Device Configurations table. 9.2 Functional Block Diagram Oscillator BAT 5 Charger Detection Circuit Counter Logic circuit Overcharge Comparator (OVP) with Hys 2 COUT Overcharge Current Comparator Delay Short Detect Over-Discharge Comparator (UVP) with Hys Logic circuit 3 DOUT Over-Discharge Current Comparator R V–D VSS 4 IV–S BAT 6 V– 9.3 Feature Description The BQ2970 family of devices measures voltage drops across several input pins for monitoring and detection of the following faults: OCC, OCD, OVP, and UVP. An internal oscillator initiates a timer to the fixed delays associated with each parameter once the fault is triggered. Once the timer expires due to a fault condition, the appropriate FET drive output (COUT or DOUT) is activated to turn OFF the external FET. The same method is applicable for the recovery feature once the system fault is removed and the recovery parameter is satisfied, then the recovery timer is initiated. If there are no reoccurrences of this fault during this period, the appropriate gate drive is activated to turn ON the appropriate external FET. 9.4 Device Functional Modes 9.4.1 Normal Operation This device monitors the voltage of the battery connected between BAT pin and VSS pin and the differential voltage between V– pin and VSS pin to control charging and discharging. The system is operating in NORMAL mode when the battery voltage range is between the over-discharge detection threshold (VUVP) and the overcharge detection threshold (VOVP), and the V– pin voltage is within the range for charge overcurrent threshold (VOCC) to over-discharge current threshold (VOCD) when measured with respect to VSS. If these conditions are satisfied, the device turns ON the drive for COUT and DOUT FET control. Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 15 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 CAUTION When the battery is connected for the first time, the discharging circuit might not be enabled. In this case, short the V– pin to the VSS pin. Alternatively, connect the charger between the Pack+ and Pack– terminals in the system. 9.4.2 Overcharge Status This mode is detected when the battery voltage measured is higher than the overcharge detection threshold (VOVP) during charging. If this condition exists for a period greater than the overcharge detection delay (tOVPD) or longer, the COUT output signal is driven low to turn OFF the charging FET to prevent any further charging of the battery. The overcharge condition is released if one of the following conditions occurs: • • If the V– pin is higher than the overcharge detection voltage (VOCC_Min), the device releases the overcharge status when the battery voltage drops below the overcharge release voltage (VOVP-Hys). If the V– pin is higher than or equal to the over-discharge detection voltage (VOCD), the device releases the overcharge status when the battery voltage drops below the overcharge detection voltage (VOVP). The discharge is initiated by connecting a load after the overcharge detection. The V– pin rises to a voltage greater than VSS due to the parasitic diode of the charge FET conducting to support the load. If the V– pin voltage is higher than or equal to the discharge overcurrent detection threshold (VOCD), the overcurrent condition status is released only if the battery voltage drops lower than or equal to the overcharge detection voltage (VOVP). CAUTION 1. If the battery is overcharged to a level greater than overcharge detection (VOVP) and the battery voltage does not drop below the overcharge detection voltage (VOVP) with a heavy load connected, the discharge overcurrent and load short-circuit detection features do not function until the battery voltage drops below the overcharge detection voltage (VOVP). The internal impedance of a battery is in the order of tens of mΩ, so application of a heavy load on the output should allow the battery voltage to drop immediately, enabling discharge overcurrent detection and load short-circuit detection features after an overcharge release delay. 2. When a charger is connected after an overcharge detection, the overcharge status does not release even if the battery voltage drops below the overcharge release threshold. The overcharge status is released when the V– pin voltage exceeds the overcurrent detection voltage (VOCD) by removing the charger. 9.4.3 Over-Discharge Status If the battery voltage drops below the over-discharge detection voltage (VUVP) for a time greater than (tUVPD) the discharge control output, DOUT is switched to a low state and the discharge FET is turned OFF to prevent further discharging of the battery. This is referred to as an over-discharge detection status. In this condition, the V– pin is internally pulled up to BAT by the resistor RV–D. When this occurs, the voltage difference between V– and BAT pins is 1.3 V or lower, and the current consumption of the device is reduced to power-down level ISTANDBY. The current sink IV–S is not active in power-down state or over-discharge state. The power-down state is released when a charger is connected and the voltage delta between V– and BAT pins is greater than 1.3 V. If a charger is connected to a battery in over-discharge state and the voltage detected at the V– is lower than –0.7 V, the device releases the over-discharge state and allows the DOUT pin to go high and turn ON the discharge FET once the battery voltage exceeds over-discharge detection voltage (VUVP). If a charger is connected to a battery in over-discharge state and the voltage detected at the V– is higher than –0.7 V, the device releases the over-discharge state and allows the DOUT pin to go high and turn ON the discharge FET once the battery voltage exceeds over-discharge detection release hysteresis voltage (VUVP +Hys). 16 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 9.4.4 Discharge Overcurrent Status (Discharge Overcurrent, Load Short-Circuit) When a battery is in normal operation and the V– pin is equal to or higher than the discharge overcurrent threshold for a time greater than the discharge overcurrent detection delay, the DOUT pin is pulled low to turn OFF the discharge FET and prevent further discharge of the battery. This is known as the discharge overcurrent status. In the discharge overcurrent status, the V– and VSS pins are connected by a constant current sink IV–S. When this occurs and a load is connected, the V– pin is at BAT potential. If the load is disconnected, the V– pin goes to VSS (BAT/2) potential. This device detects the status when the impedance between Pack+ and Pack– (see Figure 26) increases and is equal to the impedance that enables the voltage at the V– pin to return to BAT – 1 V or lower. The discharge overcurrent status is restored to the normal status. Alternatively, by connecting the charger to the system, the device returns to normal status from discharge overcurrent detection status, because the voltage at the V– pin drops to BAT – 1 V or lower. The resistance RV–D between V– and BAT is not connected in the discharge overcurrent detection status. 9.4.5 Charge Overcurrent Status When a battery is in normal operation status and the voltage at V– pin is lower than the charge overcurrent detection due to high charge current for a time greater than charge overcurrent detection delay, the COUT pin is pulled low to turn OFF the charge FET and prevent further charging to continue. This is known as charge overcurrent status. The device is restored to normal status from charge overcurrent status when the voltage at the V– pin returns to charge overcurrent detection voltage or higher by removing the charger from the system. The charge overcurrent detection feature does not work in the over-discharge status. The resistance RV–D between V– and BAT and the current sink IV–S is not connected in the charge overcurrent status. 9.4.6 0-V Charging Function Enabled This feature enables recharging a connected battery that has very low voltage due to self-discharge. When the charger applies a voltage greater than or equal to V0CHG to Pack+ and Pack– connections, the COUT pin gate drive is fixed by the BAT pin voltage. Once the voltage between the gate and the source of the charging FET becomes equal to or greater than the turn ON voltage due to the charger voltage, the charging FET is ON and the battery is charged with current flow through the charging FET and the internal parasitic diode of the discharging FET. Once the battery voltage is equal to or higher than the over-discharge release voltage, the device enters normal status. CAUTION 1. Some battery providers do not recommend charging a depleted (self-discharged) battery. Consult the battery supplier to determine whether to have the 0-V battery charger function. 2. The 0-V battery charge feature has a higher priority than the charge overcurrent detection function. In this case, the 0-V charging will be allowed and the battery charges forcibly, which results in charge overcurrent detection being disabled if the battery voltage is lower than the over-discharge detection voltage. 9.4.7 0-V Charging Inhibit Function This feature inhibits recharging a battery that has an internal short circuit of a 0-V battery. If the battery voltage is below the charge inhibit voltage V0INH or lower, the charge FET control gate is fixed to the Pack– voltage to inhibit charging. When the battery is equal to V0INH or higher, charging can be performed. The 0-V charge inhibit function is available in all configurations of the BQ297xx device. Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 17 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 CAUTION Some battery providers do not recommend charging a depleted (self-discharged) battery. Consult the battery supplier to determine whether to enable or inhibit the 0-V battery charger function. 9.4.8 Delay Circuit The detection delay timers are based from an internal clock with a frequency of 10 kHz. DOUT BAT tD 0 ≤ tD ≤ tSCCD VSS Time tD ˂ tOCDD V– VSCC VOCD VSS Time Figure 9-1. Delay Circuit If the over-discharge current is detected, but remains below the over-discharge short circuit detection threshold, the over-discharge detection conditions must be valid for a time greater than or equal to over-discharge current delay tOCCD time before the DOUT goes low to turn OFF the discharge FET. However, during any time the discharge overcurrent detection exceeds the short circuit detection threshold for a time greater than or equal to load circuit detection delay tSCCD, the DOUT pin goes low in a faster delay for protection. 18 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 10 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 10.1 Application Information The BQ2970 devices are a family of primary protectors used for protection of the battery pack in the application. The application drives two low-side NMOS FETs that are controlled to provide energy to the system loads or interrupt the power in the event of a fault condition. 10.2 Typical Application PACK + V– NC BAT DOUT VSS 0.1 µF COUT 330 2.2k CELLP CELLN PACK– D S CHG S DSG The 5-M resistor for an external gate-source is optional. Figure 10-1. Typical Application Schematic, BQ2970 10.2.1 Design Requirements For this design example, use the parameters listed in Table 10-1. Table 10-1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE at TA = 25°C Input voltage range 4.5 V to 7 V Maximum operating discharge current 7A Maximum Charge Current for battery pack 4.5 A Overvoltage Protection (OVP) 4.275 V Overvoltage detection delay timer 1.2 s Overvoltage Protection (OVP) release voltage 4.175 V Undervoltage Protection (UVP) 2.8 V Undervoltage detection delay timer 150 ms Undervoltage Protection (UVP) release voltage 2.9 V Charge Overcurrent detection (OCC) voltage –70 mV Charge Overcurrent Detection (OCC) delay timer 9 ms Discharge Overcurrent Detection (OCD) voltage 100 mV Discharge Overcurrent Detection (OCD) delay timer 18 ms Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 19 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 Table 10-1. Design Parameters (continued) DESIGN PARAMETER EXAMPLE VALUE at TA = 25°C Load Short Circuit Detection SCC) voltage, BAT to –V ≤ threshold 500 mV Load Short Circuit Detection (SCC) delay timer 250 µs Load Short Circuit release voltage, BAT to –V ≥ Threshold 1V 10.2.2 Detailed Design Procedure Note The external FET selection is important to ensure the battery pack protection is sufficient and complies to the requirements of the system. • • • • FET Selection: Because the maximum desired discharge current is 7 A, ensure that the Discharge Overcurrent circuit does not trigger until the discharge current is above this value. The total resistance tolerated across the two external FETs (CHG + DSG) should be 100 mV/7 A = 14.3 mΩ. Based on the information of the total ON resistance of the two switches, determine what would be the Charge Overcurrent Detection threshold, 14.3 mΩ × 4.5 A = 65 mV. Selecting a device with a 70-mV trigger threshold for Charge Overcurrent trigger is acceptable. The total Rds ON should factor in any worst-case parameter based on the FET ON resistance, de-rating due to temperature effects and minimum required operation, and the associated gate drive (Vgs). Therefore, the FET choice should meet the following criteria: Vdss = 25 V • • • • 20 Each FET Rds ON = 7.5 mΩ at Tj = 25°C and Vgs = 3.5 V Imax > 50 A to allow for short Circuit Current condition for 350 µs (max delay timer). The only limiting factor during this condition is Pack Voltage/(Cell Resistance + (2 × FET_RdsON) + Trace Resistance). Use the CSD16406Q3 FET for the application. An RC filter is required on the BAT for noise, and enables the device to operate during sharp negative transients. The 330-Ω resistor also limits the current during a reverse connection on the system. TI recommends placing a high impedance 5-MΩ across the gate source of each external FET to deplete any charge on the gate-source capacitance. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 10.2.3 Application Performance Plots Orange Line (Channel 1) = Power Up Ramp on BAT Pin Turquoise Line (Channel 2) = DOUT Gate Drive Output DOUT goes from low to high when UVP Recovery = UVP Set Threshold +100 mV Figure 10-2. UVP Recovery Orange Line (Channel 1) = Power Up Ramp on BAT pin Turquoise Line (Channel 2) = DOUT Gate Drive Output Figure 10-4. Initial Power Up, DOUT Orange Line (Channel 1) = Power Up Ramp on BAT Pin Turquoise Line (Channel 2) = COUT Gate Drive Output COUT goes from high to low when OVP threshold = OVP set Threshold + set delay time Figure 10-6. OVP Set Condition Orange Line (Channel 1) = Power Down Ramp on BAT Pin Turquoise Line (Channel 2) = DOUT Date Drive Output DOUT goes from high to low when UVP threshold = UVP set Threshold + set delay time Figure 10-3. UVP Set Condition Orange Line (Channel 1) = Power Up Ramp on BAT Pin Turquoise Line (Channel 2) = COUT Gate Drive Output Figure 10-5. Initial Power Up, COUT Orange Line (Channel 1) = Decrease Voltage on BAT Pin Turquoise Line (Channel 2) = COUT Gate Drive Output COUT goes from low to high when OVP Recovery = OVP Set Threshold –100 mV Figure 10-7. OVP Recovery Condition Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 21 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 11 Power Supply Recommendations The recommended power supply for this device is a maximum 8-V operation on the BAT input pin. 12 Layout 12.1 Layout Guidelines The following are the recommended layout guidelines: 1. Ensure the external power FETs are adequately compensated for heat dissipation with sufficient thermal heat spreader based on worst-case power delivery. 2. The connection between the two external power FETs should be very close to ensure there is not an additional drop for fault sensing. 3. The input RC filter on the BAT pin should be close to the terminal of the IC. 12.2 Layout Example Power Trace Line PACK+ PACK– V– 6 COUT BAT 5 DOUT VSS 4 1 NC 2 3 Power Trace Line Power Trace Line S G 1 4 S S 1 S 2 2 S S 3 G 3 4 CSD16406Q3 CSD16406Q3 D D D 5 6 7 8 7 D D 6 8 D 5 D D Power Trace Via connects between two layers Figure 12-1. BQ2970 Board Layout 22 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 BQ2970, BQ2971, BQ2972, BQ2973 www.ti.com SLUSBU9H – MARCH 2014 – REVISED JUNE 2021 13 Device and Documentation Support 13.1 Related Documentation BQ29700 Single-Cell Li-Ion Protector EVM User's Guide (SLUUAZ3) 13.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 13.3 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 13.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 13.5 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973 Submit Document Feedback 23 PACKAGE OPTION ADDENDUM www.ti.com 11-Jun-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) BQ29700DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 FA BQ29700DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 FA BQ29701DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 FY BQ29701DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 FY BQ29702DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 FZ BQ29702DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 FZ BQ29703DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F1 BQ29703DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F1 BQ29704DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F2 BQ29704DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F2 BQ29705DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F3 BQ29705DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F3 BQ29706DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F4 BQ29706DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F4 BQ29707DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F5 BQ29707DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 F5 BQ29716DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3P BQ29716DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3P BQ29717DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3Q BQ29717DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3Q Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 11-Jun-2021 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) BQ29718DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3R BQ29718DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3R BQ29723DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3S BQ29723DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3S BQ29728DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 EJ BQ29728DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 EJ BQ29729DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3T BQ29729DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3T BQ29732DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3U BQ29732DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 3U BQ29733DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 4Q BQ29733DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 4Q BQ29737DSER ACTIVE WSON DSE 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 EI BQ29737DSET ACTIVE WSON DSE 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 EI (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of