BQ34Z100-G1
BQ34Z100-G1
SLUSBZ5D – JANUARY 2015 – REVISED
APRIL 2021
SLUSBZ5D – JANUARY 2015 – REVISED APRIL 2021
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BQ34Z100-G1 Wide Range Fuel Gauge with Impedance Track™ Technology
1 Features
2 Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Supports Li-ion, LiFePO4, PbA, NiMH, and NiCd
chemistries
Capacity estimation using patented Impedance
Track™ technology for batteries from 3 V to 65 V
– Aging compensation
– Self-discharge compensation
Supports battery capacities up to 29 Ah with
standard configuration options
Supports charge and discharge currents up to
32 A with standard configuration options
External NTC thermistor support
Supports two-wire I2C and HDQ single-wire
communication interfaces with host system
SHA-1/HMAC authentication
One- or four-LED direct display control
Five-LED and higher display through port
expander
Reduced power modes (typical battery pack
operating range conditions)
– NORMAL operation: < 145-µA average
– SLEEP: < 84-µA average
– FULL SLEEP: < 30-µA average
Package: 14-pin TSSOP
Light electric vehicles
Medical instrumentation
Mobile radios
Power tools
Uninterruptible power supplies (UPS)
3 Description
The BQ34Z100-G1 device is an Impedance Track™
fuel gauge for Li-ion, PbA, NiMH, and NiCd
batteries, and works independently of battery seriescell configurations. Batteries from 3 V to 65 V can
be easily supported through an external voltage
translation circuit that is controlled automatically to
reduce system power consumption.
The BQ34Z100-G1 device provides several interface
options, including an I2C slave, an HDQ slave, one
or four direct LEDs, and an ALERT output pin.
Additionally, the BQ34Z100-G1 provides support for
an external port expander for more than four LEDs.
Device Information
PART NUMBER
BQ34Z100-G1
(1)
(1)
PACKAGE
BODY SIZE (NOM)
TSSOP (14)
5.00 mm × 4.40 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
An©IMPORTANT
NOTICEIncorporated
at the end of this data sheet addresses availability, warranty, changes, use in
safety-critical
applications,
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2021 Texas Instruments
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics: Power-On Reset................ 5
6.6 Electrical Characteristics: LDO Regulator...................5
6.7 Electrical Characteristics: Internal Temperature
Sensor Characteristics.................................................. 5
6.8 Electrical Characteristics: Low-Frequency
Oscillator....................................................................... 6
6.9 Electrical Characteristics: High-Frequency
Oscillator....................................................................... 6
6.10 Electrical Characteristics: Integrating ADC
(Coulomb Counter) Characteristics............................... 6
6.11 Electrical Characteristics: ADC (Temperature
and Cell Measurement) Characteristics........................ 6
6.12 Electrical Characteristics: Data Flash Memory
Characteristics...............................................................7
6.13 Timing Requirements: HDQ Communication............ 7
6.14 Timing Requirements: I2C-Compatible Interface...... 8
6.15 Typical Characteristics.............................................. 9
7 Detailed Description......................................................10
7.1 Overview................................................................... 10
7.2 Functional Block Diagram......................................... 11
7.3 Feature Description...................................................11
7.4 Device Functional Modes..........................................44
8 Application and Implementation.................................. 45
8.1 Application Information............................................. 45
8.2 Typical Applications.................................................. 45
9 Power Supply Recommendations................................53
10 Layout...........................................................................54
10.1 Layout Guidelines................................................... 54
10.2 Layout Example...................................................... 54
11 Device and Documentation Support..........................57
11.1 Documentation Support.......................................... 57
11.2 Receiving Notification of Documentation Updates.. 57
11.3 Support Resources................................................. 57
11.4 Trademarks............................................................. 57
11.5 Electrostatic Discharge Caution.............................. 57
11.6 Glossary.................................................................. 57
12 Mechanical, Packaging, and Orderable
Information.................................................................... 57
4 Revision History
Updated the numbering format for tables, figures, and cross-references throughout the document.
Changes from Revision C (February 2019) to Revision D (April 2021)
Page
• Changed Ground System ................................................................................................................................ 54
• Changed Differential Connection Between SRP and SRN Pins with Sense Resistor ..................................... 55
Changes from Revision B (July 2016) to Revision C (February 2019)
Page
• Deleted EV2300 references..............................................................................................................................42
2
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5 Pin Configuration and Functions
P2
1
14
P3/SDA
VEN
2
13
P4/SCL
P1
3
12
P5/HDQ
BAT
4
11
P6/TS
CE
5
10
SRN
REGIN
6
9
SRP
REG25
7
8
VSS
Not to scale
Table 5-1. Pin Functions
PIN
NAME
NUMBER
I/O
DESCRIPTION
P2
1
O
LED 2 or Not Used (connect to Vss)
VEN
2
O
Active High Voltage Translation Enable. This signal is optionally used to switch the input voltage
divider on/off to reduce the power consumption (typ 45 µA) of the divider network. If not used,
then this pin can be left floating or tied to Vss.
P1
3
O
LED 1 or Not Used (connect to Vss). This pin is also used to drive an LED for single-LED mode.
Use a small signal N-FET (Q1) in series with the LED as shown on Figure 8-4.
BAT
4
I
Translated Battery Voltage Input
CE
5
I
Chip Enable. Internal LDO is disconnected from REGIN when driven low.
REGIN
6
P
Internal integrated LDO input. Decouple with a 0.1-µF ceramic capacitor to Vss.
REG25
7
P
2.5-V Output voltage of the internal integrated LDO. Decouple with 1-µF ceramic capacitor to Vss.
VSS
8
P
Device ground
SRP
9
I
Analog input pin connected to the internal coulomb-counter peripheral for integrating a small
voltage between SRP and SRN where SRP is nearest the BAT– connection.
SRN
10
I
Analog input pin connected to the internal coulomb-counter peripheral for integrating a small
voltage between SRP and SRN where SRN is nearest the PACK– connection.
P6/TS
11
I
Pack thermistor voltage sense (use 103AT-type thermistor)
P5/HDQ
12
I/O
Open drain HDQ Serial communication line (slave). If not used, then this pin can be left floating or
tied to Vss.
P4/SCL
13
I
Slave I2C serial communication clock input. Use with a 10-KΩ pull-up resistor (typical). This pin is
also used for LED 4 in the four-LED mode. If not used, then this pin can be left floating or tied to
Vss.
P3/SDA
14
I/O
Open drain slave I2C serial communication data line. Use with a 10-kΩ pull-up resistor (typical).
This pin is also used for LED 3 in the four-LED mode. If not used, then this pin can be left floating
or tied to Vss.
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Regulator Input Range
–0.3
5.5
V
VCC
Supply Voltage Range
–0.3
2.75
V
VIOD
Open-drain I/O pins (SDA, SCL, HDQ, VEN)
–0.3
5.5
V
VREGIN
VBAT
Bat Input pin
–0.3
5.5
V
VI
Input Voltage range to all other pins (P1, P2, SRP, SRN)
–0.3
VCC + 0.3
V
1.5
kV
2
kV
Human-body model (HBM), BAT pin
ESD
Human-body model (HBM), all other pins
TA
Operating free-air temperature range
–40
85
°C
TF
Functional temperature range
–40
100
°C
Storage temperature range
–65
150
°C
Lead temperature (soldering, 10 s)
–40
100
°C
TSTG
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
UNIT
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
V
±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA =–40°C to 85°C; Typical Values at TA = 25°C CLDO25 = 1.0 µF, and VREGIN = 3.6 V (unless otherwise noted)
MIN
4
No operating restrictions
NOM
MAX UNIT
2.7
4.5
V
2.45
2.7
V
VREGIN
Supply Voltage
CREGIN
External input capacitor for
internal LDO between REGIN
and VSS
CLDO25
External output capacitor for
internal LDO between VCC and
VSS
ICC
NORMAL operating-mode
current
Gas Gauge in NORMAL mode,
ILOAD > Sleep Current
ISLP
SLEEP operating-mode current
Gas Gauge in SLEEP mode,
ILOAD < Sleep Current
84
μA
ISLP+
FULLSLEEP operating-mode
current
Gas Gauge in FULL SLEEP mode,
ILOAD < Sleep Current
30
μA
VOL
Output voltage, low (SCL, SDA,
HDQ, VEN)
IOL = 3 mA
VOH(PP)
Output voltage, high
IOH = –1 mA
VOH(OD)
Output voltage, high (SDA, SCL,
External pull-up resistor connected to VCC
HDQ, VEN)
VIL
Input voltage, low
No FLASH writes
Nominal capacitor values specified.
Recommend a 10% ceramic X5R type
capacitor located close to the device.
μF
1
μF
0.47
145
μA
0.4
V
VCC – 0.5
V
VCC – 0.5
V
–0.3
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0.1
0.6
V
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TA =–40°C to 85°C; Typical Values at TA = 25°C CLDO25 = 1.0 µF, and VREGIN = 3.6 V (unless otherwise noted)
MIN
VIH(OD)
Input voltage, high (SDA, SCL,
HDQ)
NOM
1.2
MAX UNIT
6
V
VA1
Input voltage range (TS)
VSS – 0.05
1
V
VA2
Input voltage range (BAT)
VSS – 0.125
5
V
VA3
Input voltage range (SRP, SRN)
VSS – 0.125
0.125
V
ILKG
Input leakage current (I/O pins)
0.3
μA
tPUCD
Power-up communication delay
250
ms
6.4 Thermal Information
BQ34Z100-G1
THERMAL
METRIC(1)
TSSOP (PW)
UNIT
14 PINS
RθJA, High K
Junction-to-ambient thermal resistance
103.8
RθJC(top)
Junction-to-case(top) thermal resistance
31.9
RθJB
Junction-to-board thermal resistance
46.6
ψJT
Junction-to-top characterization parameter
2.0
ψJB
Junction-to-board characterization parameter
45.9
RθJC(bottom)
Junction-to-case(bottom) thermal resistance
N/A
(1)
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics Application
Report, SPRA953.
6.5 Electrical Characteristics: Power-On Reset
TA = –40°C to 85°C; Typical Values at TA = 25°C and VREGIN = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIT+
Positive-going battery voltage
input at REG25
VHYS
Power-on reset hysteresis
MIN
TYP
MAX UNIT
2.05
2.20
2.31
V
45
115
185
mV
MIN
TYP
2.5
6.6 Electrical Characteristics: LDO Regulator
TA = 25°C, CLDO25 = 1.0 µF, VREGIN = 3.6 V (unless otherwise noted)(1)
PARAMETER
VREG25
ISHORT (2)
(1)
(2)
TEST CONDITIONS
Regulator output
voltage
Short Circuit
Current Limit
2.7 V ≤ VREGIN ≤ 4.5 V,
IOUT ≤ 16 mA
TA= –40°C to 85°C
2.3
2.45 V ≤ VREGIN < 2.7 V
(low battery), IOUT ≤ 3 mA
TA = –40°C to 85°C
2.3
VREG25 = 0 V
TA = –40°C to 85°C
MAX UNIT
2.7
V
250
mA
LDO output current, IOUT, is the sum of internal and external load currents.
Specified by design. Not production tested.
6.7 Electrical Characteristics: Internal Temperature Sensor Characteristics
TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
GTEMP
TEST CONDITIONS
Temperature sensor voltage gain
MIN
TYP
–2
MAX UNIT
mV/°C
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6.8 Electrical Characteristics: Low-Frequency Oscillator
TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
f(LOSC)
t(LSXO)
MIN
Operating frequency
Start-up
TYP
MAX UNIT
32.768
Frequency error(1) (2)
f(LEIO)
(1)
(2)
(3)
TEST CONDITIONS
kHz
TA = 0°C to 60°C
–1.5%
0.25%
1.5%
TA = –20°C to 70°C
–2.5%
0.25%
2.5%
TA = –40°C to 85°C
–4%
0.25%
4%
time(3)
500
μs
The frequency drift is included and measured from the trimmed frequency at VCC = 2.5 V, TA = 25°C.
The frequency error is measured from 32.768 kHz.
The startup time is defined as the time it takes for the oscillator output frequency to be ±3%.
6.9 Electrical Characteristics: High-Frequency Oscillator
TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
f(OSC)
TEST CONDITIONS
MIN
TYP
–2%
0.38%
TA = –20°C to 70°C
–3%
0.38%
3%
TA = –40°C to 85°C
–4.5%
0.38%
4.5%
2.5
5
Operating frequency
8.389
TA = 0°C to 60°C
Frequency error(1) (2)
f(EIO)
Start-up time(2)
t(SXO)
(1)
(2)
MAX UNIT
MHz
2%
ms
The frequency error is measured from 2.097 MHz.
The startup time is defined as the time it takes for the oscillator output frequency to be ±3%.
6.10 Electrical Characteristics: Integrating ADC (Coulomb Counter) Characteristics
TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
V(SR)
tSR_CONV
TEST CONDITIONS
Input voltage range, V(SRN) and V(SRP)
V(SR) = V(SRN) – V(SRP)
Conversion time
Single conversion
Resolution
Input offset
INL
Integral nonlinearity error
ZIN(SR)
Effective input resistance(1)
(1)
(2)
Input leakage
TYP
MAX UNIT
0.125
V
1
14
VOS(SR)
Ilkg(SR)
MIN
–0.125
s
15
bits
10
±0.007%
µV
±0.034%
FSR(2)
2.5
MΩ
current(1)
0.3
µA
Specified by design. Not tested in production.
Full-scale reference
6.11 Electrical Characteristics: ADC (Temperature and Cell Measurement) Characteristics
TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
VIN(ADC)
tADC_CONV
MIN
TYP
0.05
Resolution
14
Input offset
ZADC1
Effective input resistance (TS)(1)
Effective input resistance
1
(BAT)(1)
BQ34Z100-G1 not measuring cell
voltage
BQ34Z100-G1 measuring cell
voltage
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MAX UNIT
1
Conversion time
VOS(ADC)
ZADC2
6
TEST CONDITIONS
Input voltage range
V
125
ms
15
bits
mV
8
MΩ
8
MΩ
100
KΩ
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TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
(1)
TEST CONDITIONS
MIN
TYP
Input leakage current(1)
Ilkg(ADC)
MAX UNIT
0.3
µA
Specified by design. Not tested in production.
6.12 Electrical Characteristics: Data Flash Memory Characteristics
TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)
PARAMETER
tDR
MIN
TYP
Flash-programming write
ICCPROG
Flash-write supply
MAX UNIT
10
cycles(1)
Years
20,000
Cycles
Word programming time(1)
tWORDPROG
(1)
TEST CONDITIONS
Data retention(1)
current(1)
5
2
ms
10
mA
Specified by design. Not tested in production.
6.13 Timing Requirements: HDQ Communication
TA = –40°C to 85°C, 2.45 V < VREGIN = VBAT < 5.5 V; typical values at TA = 25°C and VREGIN = VBAT = 3.6 V (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
205
250
UNIT
t(CYCH)
Cycle time, host to BQ34Z100-G1
190
t(CYCD)
Cycle time, BQ34Z100-G1 to host
190
μs
t(HW1)
Host sends 1 to BQ34Z100-G1
0.5
50
μs
t(DW1)
BQ34Z100-G1 sends 1 to host
32
50
μs
μs
t(HW0)
Host sends 0 to BQ34Z100-G1
86
145
μs
t(DW0)
BQ34Z100-G1 sends 0 to host
80
145
μs
950
t(RSPS)
Response time, BQ34Z100-G1 to host
190
t(B)
Break time
190
t(BR)
Break recovery time
t(RISE)
HDQ line rising time to logic 1 (1.2 V)
t(RST)
HDQ Reset
μs
μs
40
μs
1.8
950
ns
2.2
s
1.2V
t(BR)
t(B)
t(RISE)
(b) HDQ line rise time
(a) Break and Break Recovery
t(DW1)
t(HW1)
t(DW0)
t(CYCD)
t(HW0)
t(CYCH)
(d) Gauge Transmitted Bit
(c) Host Transmitted Bit
Break
7-bit address
1-bit
R/W
8-bit data
t(RSPS)
(e) Gauge to Host Response
Figure 6-1. Timing Diagrams
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6.14 Timing Requirements: I2C-Compatible Interface
TA = –40°C to 85°C, 2.45 V < VREGIN = VBAT < 5.5 V; typical values at TA = 25°C and VREGIN = VBAT = 3.6 V (unless otherwise
noted)
PARAMETER
tr
TEST CONDITIONS
MIN
NOM
SCL/SDA rise time
tf
SCL/SDA fall time
tw(H)
SCL pulse width (high)
MAX
UNIT
300
ns
300
ns
600
ns
tw(L)
SCL pulse width (low)
1.3
μs
tsu(STA)
Setup for repeated start
600
ns
td(STA)
Start to first falling edge of SCL
600
ns
tsu(DAT)
Data setup time
100
ns
th(DAT)
Data hold time
tsu(STOP)
Setup time for stop
tBUF
Bus free time between stop and start
fSCL
Clock frequency
0
ns
600
ns
66
μs
400
tSU(STA)
tw(H)
tf
tw(L)
tr
kHz
t(BUF)
SCL
SDA
td(STA)
tsu(STOP)
tf
tr
th(DAT)
tsu(DAT)
REPEATED
START
STOP
START
Figure 6-2. I2C-Compatible Interface Timing Diagrams
8
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6.15 Typical Characteristics
15
200
160
120
Voltage Error (mV)
Total Battery Voltage
Voltage Error (mV)
10
5
0
-5
-10
80
40
0
-40
-80
-120
-15
-40qC
-20qC
-20
2800
3000
25qC
65qC
3200
-200
25.2
3400 3600 3800
Battery Voltage (mV)
4000
4200
D001
2
20
1
30.6 32.4 34.2
Battery Voltage (V)
36
37.8
39.6
D002
0
Temperature Error (qC)
15
Current Error (mA)
28.8
85°C
Figure 6-4. V(Err) Across VIN (0 mA) 9 s
25
10
5
0
-5
-10
-15
-25
-3000
27
25°C
65°C
4400
Figure 6-3. V(Err) Across VIN (0 mA)
-20
-40°C
-20°C
-160
85qC
-1
-2
-3
-4
-5
-6
-7
-40qC
-20qC
-2000
25qC
65qC
-1000
85qC
0
1000
Current (mA)
-8
2000
3000
-9
-40
-20
D003
Figure 6-5. I(Err)
0
20
40
Temperature (qC)
60
80
100
D004
Figure 6-6. T(Err)
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7 Detailed Description
7.1 Overview
The BQ34Z100-G1 device accurately predicts the battery capacity and other operational characteristics of a
single cell or multiple rechargeable cell blocks, which are voltage balanced when resting. The device supports
various Li-ion , Lead Acid (PbA), Nickel Metal Hydride (NiMH), and Nickel Cadmium (NiCd) chemistries, and can
be interrogated by a host processor to provide cell information, such as remaining capacity, full charge capacity,
and average current.
Information is accessed through a series of commands called Standard Data Commands (see Section 7.3.1.1).
Further capabilities are provided by the additional Extended Data Commands set (see Section 7.3.2). Both sets
of commands, indicated by the general format Command(), are used to read and write information contained
within the BQ34Z100-G1 device’s control and status registers, as well as its data flash locations. Commands
are sent from host to gauge using the BQ34Z100-G1 serial communications engines, HDQ and I2C, and can be
executed during application development, pack manufacture, or end-equipment operation.
Cell information is stored in the BQ34Z100-G1 in non-volatile flash memory. Many of these data flash locations
are accessible during application development and pack manufacture. They cannot, generally, be accessed
directly during end-equipment operation. Access to these locations is achieved by using the BQ34Z100-G1
device’s companion evaluation software, through individual commands, or through a sequence of data-flashaccess commands. To access a desired data flash location, the correct data flash subclass and offset must be
known.
The BQ34Z100-G1 provides 32 bytes of user-programmable data flash memory. This data space is accessed
through a data flash interface. For specifics on accessing the data flash, refer to Section 7.3.3.
The key to the BQ34Z100-G1 device’s high-accuracy gas gauging prediction is Texas Instrument’s proprietary
Impedance Track algorithm. This algorithm uses voltage measurements, characteristics, and properties to create
state-of-charge predictions that can achieve accuracy with as little as 1% error across a wide variety of operating
conditions.
The BQ34Z100-G1 measures charge/discharge activity by monitoring the voltage across a small-value series
sense resistor connected in the low side of the battery circuit. When an application’s load is applied, cell
impedance is measured by comparing its Open Circuit Voltage (OCV) with its measured voltage under loading
conditions.
The BQ34Z100-G1 can use an NTC thermistor (default is Semitec 103AT or Mitsubishi BN35-3H103FB-50) for
temperature measurement, or can also be configured to use its internal temperature sensor. The BQ34Z100-G1
uses temperature to monitor the battery-pack environment, which is used for fuel gauging and cell protection
functionality.
To minimize power consumption, the BQ34Z100-G1 has three power modes: NORMAL, SLEEP, and FULL
SLEEP. The BQ34Z100-G1 passes automatically between these modes, depending upon the occurrence of
specific events.
Multiple modes are available for configuring from one to 16 LEDs as an indicator of remaining state of charge.
More than four LEDs require the use of one or two inexpensive SN74HC164 shift register expanders.
A SHA-1/HMAC-based battery pack authentication feature is also implemented on the BQ34Z100-G1. When
the IC is in UNSEALED mode, authentication keys can be (re)assigned. A scratch pad area is used to receive
challenge information from a host and to export SHA-1/HMAC encrypted responses. See Section 7.3.15.1 for
further details.
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Note
Formatting conventions in this document:
Commands: italics with parentheses and no breaking spaces; for example, RemainingCapacity().
Data Flash: italics, bold, and breaking spaces; for example, Design Capacity.
Register Bits and Flags: brackets only; for example, [TDA] Data
Flash Bits: italic and bold; for example, [LED1]
Modes and states: ALL CAPITALS; for example, UNSEALED mode.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Data Commands
7.3.1.1 Standard Data Commands
The BQ34Z100-G1 uses a series of 2-byte standard commands to enable host reading and writing of battery
information. Each standard command has an associated command-code pair, as indicated in Table 7-1. Because
each command consists of two bytes of data, two consecutive HDQ/I2C transmissions must be executed to
initiate the command function and to read or write the corresponding two bytes of data. Standard commands
are accessible in NORMAL operation. Also, two block commands are available to read Manufacturer Name and
Device Chemistry. Read/Write permissions depend on the active access mode.
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Table 7-1. Commands
NAME
COMMAND CODE
UNIT
SEALED ACCESS
UNSEALED
ACCESS
Control()
CNTL
0x00/0x01
N/A
R/W
R/W
StateOfCharge()
SOC
0x02
%
R
R
MaxError()
ME
0x03
%
R
R
RemainingCapacity()
RM
0x04/0x05
mAh
R
R
FullChargeCapacity()
FCC
0x06/0x07
mAh
R
R
Voltage()
VOLT
0x08/0x09
mV
R
R
AverageCurrent()
AI
0x0A/0x0B
mA
R
R
Temperature()
TEMP
0x0C/0x0D
0.1 K
R
R
Flags()
FLAGS
0x0E/0x0F
N/A
R
R
Current()
I
0x10/0x11
mA
R
R
FlagsB()
FLAGSB
0x12/0x13
N/A
R
R
7.3.1.2 Control(): 0x00/0x01
Issuing a Control() command requires a subsequent two-byte subcommand. These additional bytes specify the
particular control function desired. The Control() command allows the host to control specific features of the
BQ34Z100-G1 during normal operation, and additional features when the BQ34Z100-G1 is in different access
modes, as described in Table 7-2.
Table 7-2. Control() Subcommands
CNTL FUNCTION
CNTL DATA
SEALED ACCESS
DESCRIPTION
CONTROL_STATUS
0x0000
Yes
Reports the status of key features.
DEVICE_TYPE
0x0001
Yes
Reports the device type of 0x100 (indicating BQ34Z100-G1)
FW_VERSION
0x0002
Yes
Reports the firmware version on the device type
HW_VERSION
0x0003
Yes
Reports the hardware version of the device type
RESET_DATA
0x0005
Yes
Returns reset data
PREV_MACWRITE
0x0007
Yes
Returns previous Control() command code
CHEM_ID
0x0008
Yes
Reports the chemical identifier of the Impedance Track
configuration
BOARD_OFFSET
0x0009
Yes
Forces the device to measure and store the board offset
CC_OFFSET
0x000A
Yes
Forces the device to measure the internal CC offset
CC_OFFSET_SAVE
0x000B
Yes
Forces the device to store the internal CC offset
DF_VERSION
0x000C
Yes
Reports the data flash version on the device
SET_FULLSLEEP
0x0010
Yes
Set the [FULLSLEEP] bit in the control register to 1
STATIC_CHEM_CHKSUM
0x0017
Yes
Calculates chemistry checksum
SEALED
0x0020
No
Places the device in SEALED access mode
IT_ENABLE
0x0021
No
Enables the Impedance Track algorithm
CAL_ENABLE
0x002D
No
Toggle CALIBRATION mode enable
RESET
0x0041
No
Forces a full reset of the BQ34Z100-G1
EXIT_CAL
0x0080
No
Exit CALIBRATION mode
ENTER_CAL
0x0081
No
Enter CALIBRATION mode
OFFSET_CAL
0x0082
No
Reports internal CC offset in CALIBRATION mode
7.3.1.2.1 CONTROL_STATUS: 0x0000
Instructs the fuel gauge to return status information to Control addresses 0x00/0x01. The status word includes
the following information.
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Table 7-3. CONTROL_STATUS Flags
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
High Byte
RSVD
FAS
SS
CALEN
CCA
BCA
CSV
RSVD
Low Byte
RSVD
RSVD
FULLSLEEP
SLEEP
LDMD
RUP_DIS
VOK
QEN
Legend: RSVD = Reserved
FAS: Status bit that indicates the BQ34Z100-G1 is in FULL ACCESS SEALED state. Active when set.
SS: Status bit that indicates the BQ34Z100-G1 is in the SEALED state. Active when set.
CALEN: Status bit that indicates the BQ34Z100-G1 calibration function is active. True when set.
Default is 0.
CCA: Status bit that indicates the BQ34Z100-G1 Coulomb Counter Calibration routine is active. Active when set.
BCA: Status bit that indicates the BQ34Z100-G1 Board Calibration routine is active. Active when set.
CSV: Status bit that indicates a valid data flash checksum has been generated. Active when set.
FULLSLEEP: Status bit that indicates the BQ34Z100-G1 is in FULL SLEEP mode. True when set. The state can only be
detected by monitoring the power used by the BQ34Z100-G1 because any communication will automatically clear
it.
SLEEP: Status bit that indicates the BQ34Z100-G1 is in SLEEP mode. True when set.
LDMD: Status bit that indicates the BQ34Z100-G1 Impedance Track algorithm using constant-power mode. True when
set. Default is 0 (CONSTANT CURRENT mode).
RUP_DIS: Status bit that indicates the BQ34Z100-G1 Ra table updates are disabled. True when set.
VOK: Status bit that indicates cell voltages are OK for Qmax updates. True when set.
QEN: Status bit that indicates the BQ34Z100-G1 Qmax updates are enabled. True when set.
7.3.1.2.2 DEVICE TYPE: 0x0001
Instructs the fuel gauge to return the device type to addresses 0x00/0x01.
7.3.1.2.3 FW_VERSION: 0x0002
Instructs the fuel gauge to return the firmware version to addresses 0x00/0x01.
7.3.1.2.4 HW_VERSION: 0x0003
Instructs the fuel gauge to return the hardware version to addresses 0x00/0x01.
7.3.1.2.5 RESET_DATA: 0x0005
Instructs the fuel gauge to return the number of resets performed to addresses 0x00/0x01.
7.3.1.2.6 PREV_MACWRITE: 0x0007
Instructs the fuel gauge to return the previous command written to addresses 0x00/0x01. The value returned is
limited to less than 0x0020.
7.3.1.2.7 CHEM ID: 0x0008
Instructs the fuel gauge to return the chemical identifier for the Impedance Track configuration to addresses
0x00/0x01.
7.3.1.2.8 BOARD_OFFSET: 0x0009
Instructs the fuel gauge to calibrate board offset. During board offset calibration the [BCA] bit is set.
7.3.1.2.9 CC_OFFSET: 0x000A
Instructs the fuel gauge to calibrate the coulomb counter offset. During calibration the [CCA] bit is set.
7.3.1.2.10 CC_OFFSET_SAVE: 0x000B
Instructs the fuel gauge to save the coulomb counter offset after calibration.
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7.3.1.2.11 DF_VERSION: 0x000C
Instructs the fuel gauge to return the data flash version to addresses 0x00/0x01.
7.3.1.2.12 SET_FULLSLEEP: 0x0010
Instructs the fuel gauge to set the FULLSLEEP bit in the Control Status register to 1. This allows the gauge
to enter the FULL SLEEP power mode after the transition to SLEEP power state is detected. In FULL SLEEP
mode, less power is consumed by disabling an oscillator circuit used by the communication engines. For HDQ
communication, one host message will be dropped. For I2C communications, the first I2C message will incur a
6-ms–8-ms clock stretch while the oscillator is started and stabilized. A communication to the device in FULL
SLEEP will force the part back to the SLEEP mode.
7.3.1.2.13 STATIC_CHEM_DF_CHKSUM: 0x0017
Instructs the fuel gauge to calculate chemistry checksum as a 16-bit unsigned integer sum of all static chemistry
data. The most significant bit (MSB) of the checksum is masked yielding a 15-bit checksum. This checksum is
compared with the value stored in the data flash Static Chem DF Checksum. If the value matches, the MSB will
be cleared to indicate a pass. If it does not match, the MSB will be set to indicate a failure.
7.3.1.2.14 SEALED: 0x0020
Instructs the fuel gauge to transition from UNSEALED state to SEALED state. The fuel gauge should always be
set to SEALED state for use in customer’s end equipment.
7.3.1.2.15 IT ENABLE: 0x0021
Forces the fuel gauge to begin the Impedance Track algorithm, sets Bit 2 of UpdateStatus and causes the
[VOK] and [QEN] flags to be set in the CONTROL STATUS register. [VOK] is cleared if the voltages are not
suitable for a Qmax update. Once set, [QEN] cannot be cleared. This command is only available when the fuel
gauge is UNSEALED and is typically enabled at the last step of production after the system test is completed.
7.3.1.2.16 CAL_ENABLE: 0x002D
Instructs the fuel gauge to enable entry and exit to CALIBRATION mode.
7.3.1.2.17 RESET: 0x0041
Instructs the fuel gauge to perform a full reset. This command is only available when the fuel gauge is
UNSEALED.
7.3.1.2.18 EXIT_CAL: 0x0080
Instructs the fuel gauge to exit CALIBRATION mode.
7.3.1.2.19 ENTER_CAL: 0x0081
Instructs the fuel gauge to enter CALIBRATION mode.
7.3.1.2.20 OFFSET_CAL: 0x0082
Instructs the fuel gauge to perform offset calibration.
7.3.1.3 StateOfCharge(): 0x02
This read-only command returns an unsigned integer value of the predicted remaining battery capacity
expressed as a percentage of FullChargeCapacity() with a range of 0 to 100%.
7.3.1.4 MaxError(): 0x03
This read-only command returns an unsigned integer value of the expected margin of error, in %, in the
state-of-charge calculation, with a range of 1% to 100%. MaxError() is incremented internally by 0.05% for every
increment of CycleCount after the last QMAX update. MaxError() is incremented in the display by 1% for each
increment of CycleCount.
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Table 7-4. MaxError() Updates
EVENT
MaxError() SETTING
Full reset
Set to 100%
QMAX and Ra table update
Set to 1%
QMAX update
Set to 3%
Ra table update
Set to 5%
If MaxError() exceeds the value programmed in Max Error Limit, then [CF] in ControlStatus() is set. Only when
MaxError() returns below this value will [CF] be cleared.
7.3.1.5 RemainingCapacity(): 0x04/0x05
This read-only command pair returns the compensated battery capacity remaining. Unit is 1 mAh per bit.
7.3.1.6 FullChargeCapacity(): 0x06/07
This read-only command pair returns the compensated capacity of the battery when fully charged with units
of 1 mAh per bit. However, if PackConfiguration [SCALED] is set then the units have been scaled through
the calibration process. The actual scale is not set in the device and SCALED is just an indicator flag.
FullChargeCapacity() is updated at regular intervals under the control of the Impedance Track algorithm.
7.3.1.7 Voltage(): 0x08/0x09
This read-word command pair returns an unsigned integer value of the measured battery voltage in mV with a
range of 0 V to 65535 mV.
7.3.1.8 AverageCurrent(): 0x0A/0x0B
This read-only command pair returns a signed integer value that is the average current flowing through the
sense resistor. It is updated every 1 second with units of 1 mA per bit. However, if PackConfiguration
[SCALED] is set then the units have been scaled through the calibration process. The actual scale is not
set in the device and SCALED is just an indicator flag.
7.3.1.9 Temperature(): 0x0C/0x0D
This read-only command pair returns an unsigned integer value of the temperature, in units of 0.1 K, measured
by the gas gauge and has a range of 0 to 6553.5 K. The source of the measured temperature is configured by
the [TEMPS] bit in the Pack Configuration register .
Table 7-5. Temperature Sensor Selection
TEMPS
TEMPERATURE() SOURCE
0
Internal Temperature Sensor
1
TS Input (default)
7.3.1.10 Flags(): 0x0E/0x0F
This read-only command pair returns the contents of the Gas Gauge Status register, depicting current operation
status.
Table 7-6. Flags Bit Definitions
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
High Byte
OTC
OTD
BATHI
BATLOW
CHG_INH
XCHG
FC
CHG
Low Byte
OCVTAKEN
RSVD
RSVD
CF
RSVD
SOC1
SOCF
DSG
Legend: RSVD = Reserved
OTC: Overtemperature in Charge condition is detected. True when set
OTD: Overtemperature in Discharge condition is detected. True when set
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BATHI: Battery High bit that indicates a high battery voltage condition. Refer to the data flash Cell BH parameters for
threshold settings. True when set
BATLOW: Battery Low bit that indicates a low battery voltage condition. Refer to the data flash Cell BL parameters for threshold
settings. True when set
CHG_INH: Charge Inhibit: unable to begin charging. Refer to the data flash [Charge Inhibit Temp Low, Charge Inhibit Temp
High] parameters for threshold settings. True when set
XCHG: Charging not allowed
FC: Full charge is detected. FC is set when charge termination is reached and FC Set% = –1 (see Section 7.3.11 for
details) or StateOfCharge() is larger than FC Set% and FC Set% is not –1. True when set
CHG: (Fast) charging allowed. True when set
OCVTAKEN: Cleared on entry to RELAX mode and set to 1 when OCV measurement is performed in RELAX mode.
CF: Condition Flag indicates that the gauge needs to run through an update cycle to optimize accuracy.
SOC1: State-of-Charge Threshold 1 reached. True when set
SOCF: State-of-Charge Threshold Final reached. True when set
DSG: Discharging detected. True when set
7.3.1.11 FlagsB(): 0x12/0x13
This read-word function returns the contents of the gas-gauge status register, depicting current operation status.
Table 7-7. Flags B Bit Definitions
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
High Byte
SOH
LIFE
FIRSTDOD
RSVD
RSVD
DODEOC
DTRC
RSVD
Low Byte
RSVD
RSVD
RSVD
RSVD
RSVD
RSVD
RSVD
RSVD
Legend: RSVD = Reserved
SOH: StateOfHealth() calculation is active.
LIFE: Indicates that LiFePO4 RELAX is enabled.
FIRSTDOD: Set when RELAX mode is entered and then cleared upon valid DOD measurement for QMAX update or RELAX exit.
DODEOC: DOD at End-of-Charge is updated.
DTRC: Indicates RemainingCapacity() has been changed due to change in temperature.
7.3.1.12 Current(): 0x10/0x11
This read-only command pair returns a signed integer value that is the current flow through the sense resistor.
It is updated every 1 s with units of 1 mA; however, if PackConfiguration [SCALED] is set, then the units have
been scaled through the calibration process. The actual scale is not set in the device and SCALED is just an
indicator flag.
7.3.2 Extended Data Commands
Extended commands offer additional functionality beyond the standard set of commands. They are used in the
same manner; however, unlike standard commands, extended commands are not limited to 2-byte words. The
number of command bytes for a given extended command ranges in size from single to multiple bytes, as
specified in Table 7-8. For details on the SEALED and UNSEALED states, refer to Section 7.3.3.3.
Table 7-8. Extended Commands
NAME
16
COMMAND CODE
UNIT
SEALED
ACCESS(1) (2)
UNSEALED
ACCESS(1) (2)
AverageTimeToEmpty()
ATTE
0x18/0x19
Minutes
R
R
AverageTimeToFull()
ATTF
0x1A/0x1B
Minutes
R
R
PassedCharge()
PCHG
0x1C/0x1D
mAh
R
R
DoD0Time()
DoD0T
0x1E/0x1F
Minutes
R
R
AvailableEnergy()
AE
0x24/0x25
10 mW/h
R
R
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Table 7-8. Extended Commands (continued)
NAME
COMMAND CODE
UNIT
SEALED
ACCESS(1) (2)
UNSEALED
ACCESS(1) (2)
AveragePower()
AP
0x26/0x27
10 mW
R
R
Serial Number
SERNUM
0x28/0x29
N/A
R
R
Internal_Temperature()
INTTEMP
0x2A/0x2B
0.1 K
R
R
CycleCount()
CC
0x2C/0x2D
Counts
R
R
StateOfHealth()
SOH
0x2E/0x2F
%
R
R
ChargeVoltage()
CHGV
0x30/0x31
mV
R
R
ChargeCurrent()
CHGI
0x32/0x33
mA
R
R
PackConfiguration()
PKCFG
0x3A/0x3B
N/A
R
R
DesignCapacity()
DCAP
0x3C/0x3D
mAh
R
R
DataFlashClass() (2)
DFCLS
0x3E
N/A
N/A
R/W
DataFlashBlock() (2)
DFBLK
0x3F
N/A
R/W
R/W
Authenticate()/BlockData()
A/DF
0x40…0x53
N/A
R/W
R/W
AuthenticateCheckSum()/BlockData()
ACKS/DFD
0x54
N/A
R/W
R/W
BlockData()
DFD
0x55…0x5F
N/A
R
R/W
BlockDataCheckSum()
DFDCKS
0x60
N/A
R/W
R/W
BlockDataControl()
DFDCNTL
0x61
N/A
N/A
R/W
(1)
(2)
GridNumber()
GN
0x62
N/A
R
R
LearnedStatus()
LS
0x63
N/A
R
R
DoD@EoC()
DEOC
0x64/0x65
N/A
R
R
QStart()
QS
0x66/0x67
mAh
R
R
TrueRC()
TRC
0x68/0x69
mAh
R
R
TrueFCC()
TFCC
0x6A/0x6B
mAh
R
R
StateTime()
ST
0x6C/0x6D
s
R
R
QMaxPassedQ
QPC
0x6E/0x6F
mAh
R
R
DOD0()
DOD0
0x70/0x71
HEX#
R
R
QmaxDOD0()
QD0
0x72/0x73
N/A
R
R
QmaxTime()
QT
0x74/0x75
h/16
R
R
Reserved
RSVD
0x76...0x7F
N/A
R
R
SEALED and UNSEALED states are entered via commands to CNTL 0x00/0x01.
In SEALED mode, data flash cannot be accessed through commands 0x3E and 0x3F.
7.3.2.1 AverageTimeToEmpty(): 0x18/0x19
This read-only command pair returns an unsigned integer value of the predicted remaining battery life at the
present rate of discharge (using AverageCurrent()), in minutes. A value of 65535 indicates that the battery is not
being discharged.
7.3.2.2 AverageTimeToFull(): 0x1A/0x1B
This read-only command pair returns an unsigned integer value of predicted remaining time until the battery
reaches full charge, in minutes, based upon AverageCurrent(). The computation should account for the taper
current time extension from the linear TTF computation based on a fixed AverageCurrent() rate of charge
accumulation. A value of 65535 indicates the battery is not being charged.
7.3.2.3 PassedCharge(): 0x1C/0x1D
This read-only command pair returns a signed integer, indicating the amount of charge passed through the
sense resistor since the last IT simulation in mAh.
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7.3.2.4 DOD0Time(): 0x1E/0x1F
This read-only command pair returns the time since the last DOD0 update.
7.3.2.5 AvailableEnergy(): 0x24/0x25
This read-only command pair returns an unsigned integer value of the predicted charge or energy remaining in
the battery. The value is reported in units of mWh.
7.3.2.6 AveragePower(): 0x26/0x27
This read-word command pair returns an unsigned integer value of the average power of the current discharge.
A value of 0 indicates that the battery is not being discharged. The value is reported in units of mW.
7.3.2.7 SerialNumber(): 0x28/0x29
This read-only command pair returns the assigned pack serial number programmed in Serial Number.
7.3.2.8 InternalTemperature(): 0x2A/0x2B
This read-only command pair returns an unsigned integer value of the measured internal temperature of the
device, in units of 0.1 K, measured by the fuel gauge.
7.3.2.9 CycleCount(): 0x2C/0x2D
This read-only command pair returns an unsigned integer value of the number of cycles the battery has
experienced with a range of 0 to 65535. One cycle occurs when accumulated discharge ≥ CC Threshold.
7.3.2.10 StateOfHealth(): 0x2E/0x2F
This read-only command pair returns an unsigned integer value, expressed as a percentage of the ratio
of predicted FCC (25°C, SOH current rate) over the DesignCapacity(). The FCC (25°C, SOH current rate)
is the calculated full charge capacity at 25°C and the SOH current rate that is specified in the data flash
(State of Health Load). The range of the returned SOH percentage is 0x00 to 0x64, indicating 0% to 100%,
correspondingly.
7.3.2.11 ChargeVoltage(): 0x30/0x31
This read-only command pair returns the recommended charging voltage output from the JEITA charging profile.
It is updated automatically based on the present temperature range.
7.3.2.12 ChargeCurrent(): 0x32/0x33
This read-only command pair returns the recommended charging current output from the JEITA charging profile.
It is updated automatically based on the present temperature range.
7.3.2.13 PackConfiguration(): 0x3A/0x3B
This read-only command pair allows the host to read the configuration of selected features of the device
pertaining to various features.
7.3.2.14 DesignCapacity(): 0x3C/0x3D
This read-only command pair returns theoretical or nominal capacity of a new pack. The value is stored in
Design Capacity and is expressed in mAh.
7.3.2.15 DataFlashClass(): 0x3E
UNSEALED Access: This command sets the data flash class to be accessed. The class to be accessed should
be entered in hexadecimal.
SEALED Access: This command is not available in SEALED mode.
7.3.2.16 DataFlashBlock(): 0x3F
UNSEALED Access: If BlockDataControl has been set to 0x00, this command directs which data flash block
will be accessed by the BlockData() command. Writing a 0x00 to DataFlashBlock() specifies the BlockData()
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command will transfer authentication data. Issuing a 0x01 instructs the BlockData() command to transfer
Manufacturer Data.
SEALED Access: This command directs which data flash block will be accessed by the BlockData() command.
Writing a 0x00 to DataFlashBlock() specifies that the BlockData() command will transfer authentication data.
Issuing a 0x01 instructs the BlockData() command to transfer Manufacturer Data.
7.3.2.17 AuthenticateData/BlockData(): 0x40…0x53
UNSEALED Access: This data block has a dual function: It is used for the authentication challenge and
response and is part of the 32-byte data block when accessing data flash.
SEALED Access: This data block has a dual function: It is used for authentication challenge and response, and
is part of the 32-byte data block when accessing the Manufacturer Data.
7.3.2.18 AuthenticateChecksum/BlockData(): 0x54
UNSEALED Access: This byte holds the authentication checksum when writing the authentication challenge to
the device, and is part of the 32-byte data block when accessing data flash.
SEALED Access: This byte holds the authentication checksum when writing the authentication challenge to the
device, and is part of the 32-byte data block when accessing Manufacturer Data.
7.3.2.19 BlockData(): 0x55…0x5F
UNSEALED Access: This data block is the remainder of the 32-byte data block when accessing data flash.
SEALED Access: This data block is the remainder of the 32-byte data block when accessing Manufacturer
Data.
7.3.2.20 BlockDataChecksum(): 0x60
UNSEALED Access: This byte contains the checksum on the 32 bytes of block data read or written to data flash.
SEALED Access: This byte contains the checksum for the 32 bytes of block data written to Manufacturer Data.
7.3.2.21 BlockDataControl(): 0x61
UNSEALED Access: This command is used to control data flash ACCESS mode. Writing 0x00 to this command
enables BlockData() to access general data flash. Writing a 0x01 to this command enables the SEALED mode
operation of DataFlashBlock().
7.3.2.22 GridNumber(): 0x62
This read-only command returns the active grid point. This data is only valid during DISCHARGE mode when
[R_DIS] = 0. If [R_DIS] = 1 or not discharging, this value is not updated.
7.3.2.23 LearnedStatus(): 0x63
This read-only command returns the learned status of the resistance table.
Table 7-9. LearnedStatus(): 0x63
Bit 7
Bit 6
RSVD
Bit 5
RSVD
Bit 4
RSVD
Bit 3
RSVD
Bit 2
Qmax
Bit 1
ITEN
Bit 0
CF1
CF0
Legend: RSVD = Reserved
QMax (Bit 3): QMax updates in the field.
0 = QMax has not been updated in the field.
1 = QMax updated in the field.
ITEN (Bit 2): IT enable
0 = IT is disabled.
1 = IT is enabled.
CF1, CF0 (Bits 1–0): QMax Status
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0,0 = Battery is OK.
0,1 = QMax is first updated in the learning cycle.
7.3.2.24 Dod@Eoc(): 0x64/0x65
This read-only command pair returns the depth of discharge (DOD) at the end of charge.
7.3.2.25 QStart(): 0x66/0x67
This read-only command pair returns the initial capacity calculated from IT simulation.
7.3.2.26 TrueRC(): 0x68/0x69
This read-only command pair returns the True remaining capacity from IT simulation without the effects of the
smoothing function.
7.3.2.27 TrueFCC(): 0x6A/0x6B
This read-only command pair returns the True full charge capacity from IT simulation without the effects of the
smoothing function.
7.3.2.28 StateTime(): 0x6C/0x6D
This read-only command pair returns the time past since last state change (DISCHARGE, CHARGE, REST).
7.3.2.29 QmaxPassedQ(): 0x6E/0x6F
This read-only command pair returns the passed capacity since the last Qmax DOD update.
7.3.2.30 DOD0(): 0x70/0x71
This unsigned integer indicates the depth of discharge during the most recent OCV reading.
7.3.2.31 QmaxDod0(): 0x72/0x73
This read-only command pair returns the DOD0 saved to be used for next QMax update of Cell 1. The value is
only valid when [VOK] = 1.
7.3.2.32 QmaxTime(): 0x74/0x75
This read-only command pair returns the time since the last Qmax DOD update.
7.3.3 Data Flash Interface
7.3.3.1 Accessing Data Flash
The BQ34Z100-G1 data flash is a non-volatile memory that contains BQ34Z100-G1 initialization, default, cell
status, calibration, configuration, and user information. The data flash can be accessed in several different ways,
depending on in what mode the BQ34Z100-G1 is operating and what data is being accessed.
Commonly accessed data flash memory locations, frequently read by a host, are conveniently accessed through
specific instructions described in Section 7.3.1. These commands are available when the BQ34Z100-G1 is either
in UNSEALED or SEALED modes.
Most data flash locations, however, can only be accessible in UNSEALED mode by use of the BQ34Z100-G1
evaluation software or by data flash block transfers. These locations should be optimized and/or fixed during the
development and manufacture processes. They become part of a Golden Image File and can then be written
to multiple battery packs. Once established, the values generally remain unchanged during end-equipment
operation.
To access data flash locations individually, the block containing the desired data flash location(s) must be
transferred to the command register locations where they can be read to the host or changed directly. This
is accomplished by sending the set-up command BlockDataControl() (code 0x61) with data 0x00. Up to 32
bytes of data can be read directly from the BlockData() command locations 0x40…0x5F, externally altered,
then re-written to the BlockData() command space. Alternatively, specific locations can be read, altered, and
re-written if their corresponding offsets are used to index into the BlockData() command space. Finally, the data
20
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residing in the command space is transferred to data flash, once the correct checksum for the whole block is
written to BlockDataChecksum() (command number 0x60).
Occasionally, a data flash class will be larger than the 32-byte block size. In this case, the DataFlashBlock()
command is used to designate which 32-byte block in which the desired locations reside. The correct command
address is then given by 0x40 + offset modulo 32. For example, to access Terminate Voltage in the Gas
Gauging class, DataFlashClass() is issued 80 (0x50) to set the class. Because the offset is 48, it must reside in
the second 32-byte block. Hence, DataFlashBlock() is issued 0x01 to set the block offset, and the offset used to
index into the BlockData() memory area is 0x40 + 48 modulo 32 = 0x40 + 16 = 0x40 + 0x10 = 0x50; for example,
to modify [VOLTSEL] in Pack Configuration from 0 to 1 to enable the external voltage measurement option.
Note
The subclass ID and Offset values are in decimal format in the documentation and in bqStudio. The
example below shows these values converted to hexadecimal. For example, the Pack Configuration
subclass is d64 = 0x40.
1. Unseal the device using the Control() (0x00/0x01) command if the device is sealed.
a. Write the first 2 bytes of the UNSEAL key using the Control(0x0414) command.
(wr 0x00 0x14 0x04)
b. Write the second 2 bytes of the UNSEAL key using the Control(0x3672) command.
(wr 0x00 0x72 0x36)
2. Write 0x00 using BlockDataControl() command (0x61) to enable block data flash control.
(wr 0x61 0x00)
3. Write 0x40 (Pack Configuration Subclass) using the DataFlashClass() command (0x3E) to access the
Registers subclass.
(wr 0x3E 0x40)
4. Write the block offset location using DataFlashBlock() command (0x3F). To access data located at offset 0 to
31, use offset = 0x00. To access data located at offset 32 to 63, use offset = 0x01, and so on, as necessary.
For example, Pack Configuration (offset = 0) is in the first block so use (wr 0x3F 0x00).
5. To read the data of a specific offset, use address 0x40 + mod(offset, 32). For example, Pack Configuration
(offset = 0) is located at 0x40 and 0x41; however, [VOLTSEL] is in the MSB so only 0x40 needs to be read.
Read 1 byte starting at the 0x40 address.
(rd 0x40 old_Pack_Configuration_MSB)
In this example, assume [VOLTSEL] = 0 (default).
6. To read the 1-byte checksum, use the BlockDataChecksum() command (0x60).
(rd 0x60 OLD_checksum)
7. In this example, set [VOLTSEL] by setting Bit 3 of old_Pack_Configuration_MSB to create
new_Pack_Configuration_MSB.
8. The new value for new_Pack_Configuration_MSB can be written by writing to the specific offset location.
For example, to write 1-byte new_Pack_Configuration_MSB to Pack Configuration (offset=0) located at
0x40, use command (wr 0x4B new_Pack_Configuration_MSB).
9. The data is actually transferred to the data flash when the correct checksum for the whole block (0x40 to
0x5F) is written to BlockDataChecksum() (0x60).
(wr 0x60 NEW_checksum)
The checksum is (255-x) where x is the 8-bit summation of the BlockData() (0x40 to 0x5F) on a byte-by-byte
basis.
A quick way to calculate the new checksum is to make use of the old checksum:
a. temp = mod (255 – OLD_checksum – old_Pack_Configuration_MSB), 256)
b. NEW_checksum = 255 – mod (temp + new_Pack_Configuration_MSB, 256)
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10. Reset the gauge to ensure the new data flash parameter goes into effect by using Control(0x0041).
(wr 0x00 0x41 0x00)
If previously sealed, the gauge will automatically become sealed again after RESET.
11. If not previously sealed, then seal the gauge by using Control(0x0020).
(wr 0x00 0x20 0x00)
Reading and writing subclass data are block operations 32 bytes in length. Data can be written in shorter block
sizes, however. Blocks can be shorter than 32 bytes in length. Writing these blocks back to data flash will not
overwrite data that extend beyond the actual block length.
Note
None of the data written to memory is bounded by the BQ34Z100-G1: The values are not rejected
by the gas gauge. Writing an incorrect value may result in hardware failure due to firmware program
interpretation of the invalid data. The data written is persistent, so a power-on reset resolves the fault.
7.3.3.2 Manufacturer Information Block
The BQ34Z100-G1 contains 32 bytes of user-programmable data flash storage: Manufacturer Info Block. The
method for accessing these memory locations is slightly different, depending on if the device is in UNSEALED or
SEALED modes.
When in UNSEALED mode and when an “0x00” has been written to BlockDataControl(), accessing the
Manufacturer Info Block is identical to accessing general data flash locations. First, a DataFlashClass()
command is used to set the subclass, then a DataFlashBlock() command sets the offset for the first data
flash address within the subclass. The BlockData() command codes contain the referenced data flash data.
When writing the data flash, a checksum is expected to be received by BlockDataChecksum(). Only when the
checksum is received and verified is the data actually written to data flash.
As an example, the data flash location for Manufacturer Info Block is defined as having a Subclass = 58
and an Offset = 0 through 31 (32 byte block). The specification of Class = System Data is not needed to
address Manufacturer Info Block, but is used instead for grouping purposes when viewing data flash info in the
BQ34Z100-G1 evaluation software.
When in SEALED mode or when “0x01” BlockDataControl() does not contain “0x00”, data flash is no longer
available in the manner used in UNSEALED mode. Rather than issuing subclass information, a designated
Manufacturer Information Block is selected with the DataFlashBlock() command. Issuing a 0x01, 0x02, or
0x03 with this command causes the corresponding information block (A, B, or C, respectively) to be transferred
to the command space 0x40…0x5F for editing or reading by the host. Upon successful writing of checksum
information to BlockDataChecksum(), the modified block is returned to data flash.
Note
Manufacturer Info Block A is “read only” when in SEALED mode.
7.3.3.3 Access Modes
The BQ34Z100-G1 provides three security modes that control data flash access permissions according to Table
7-10. Public Access refers to those data flash locations specified in Table 7-11 that are accessible to the user.
Private Access refers to reserved data flash locations used by the BQ34Z100-G1 system. Care should be taken
to avoid writing to Private data flash locations when performing block writes in FULL ACCESS mode by following
the procedure outlined in Section 7.3.3.1.
Table 7-10. Data Flash Access
SECURITY MODE
22
DF—PUBLIC ACCESS
DF—PRIVATE ACCESS
BOOTROM
N/A
N/A
FULL ACCESS
R/W
R/W
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Table 7-10. Data Flash Access (continued)
SECURITY MODE
DF—PUBLIC ACCESS
DF—PRIVATE ACCESS
UNSEALED
R/W
R/W
SEALED
R
N/A
Although FULL ACCESS and UNSEALED modes appear identical, FULL ACCESS mode allows the BQ34Z100G1 to directly transition to BOOTROM mode and also write access keys. UNSEALED mode does not have these
abilities.
7.3.3.4 Sealing/Unsealing Data Flash Access
The BQ34Z100-G1 implements a key-access scheme to transition between SEALED, UNSEALED, and FULL
ACCESS modes. Each transition requires that a unique set of two keys be sent to the BQ34Z100-G1 via the
Control() command (these keys are unrelated to the keys used for SHA-1/HMAC authentication). The keys
must be sent consecutively, with no other data being written to the Control() register in between. Note that to
avoid conflict, the keys must be different from the codes presented in the CNTL DATA column of Table 7-2
subcommands.
When in SEALED mode, the [SS] bit of Control Status() is set, but when the UNSEAL keys are correctly received
by the BQ34Z100-G1, the [SS] bit is cleared. When the full access keys are correctly received, then the Flags()
[FAS] bit is cleared.
Both sets of keys for each level are 2 bytes each in length and are stored in data flash. The UNSEAL key (stored
at Unseal Key 0 and Unseal Key 1) and the FULL ACCESS key (stored at Full Access Key 0 and Full Access
Key 1) can only be updated when in FULL ACCESS mode. The order of the bytes entered through the Control()
command is the reverse of what is read from the part. For example, if the 1st and 2nd word of the UnSeal Key
0 returns 0x1234 and 0x5678, then Control() should supply 0x3412 and 0x7856 to unseal the part.
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7.3.4 Data Flash Summary
Table 7-11 summarizes the data flash locations available to the user, including the default, minimum, and
maximum values.
Table 7-11. Data Flash Summary
24
CLASS
SUBCLASS
SUBCLASS
ID
Configuration
Safety
2
0
Configuration
Safety
2
2
Configuration
Safety
2
3
I2
Configuration
Safety
2
5
Configuration
Safety
2
7
Configuration
Safety
2
8
Configuration
Charge Inhibit
Cfg
32
Configuration
Charge Inhibit
Cfg
Configuration
NAME
MIN
MAX
DEFAULT
UNIT
I2
OT Chg
0
1200
550
0.1°C
U1
OT Chg Time
0
60
2
s
OT Chg Recovery
0
1200
500
0.1°C
I2
OT Dsg
0
1200
600
0.1°C
U1
OT Dsg Time
0
60
2
s
I2
OT Dsg Recovery
0
1200
550
0.1°C
0
I2
Chg Inhibit Temp Low
–400
1200
0
0.1°C
32
2
I2
Chg Inhibit Temp High
–400
1200
450
0.1°C
Charge Inhibit
Cfg
32
4
I2
Temp Hys
0
100
50
0.1°C
Configuration
Charge
34
0
I2
Suspend Low Temp
–400
1200
–50
0.1°C
Configuration
Charge
34
2
I2
Suspend High Temp
–400
1200
550
0.1°C
Configuration
Charge
34
4
U1
Pb EFF Efficiency
0
100
100
%
0.078125
0.0195312
5
%
Configuration
Charge
34
Configuration
Charge
Configuration
Charge
OFFSET
TYPE
5
F4
Pb Temp Comp
0
34
9
U1
Pb Drop Off Percent
0
100
96
%
34
10
F4
Pb Reduction Rate
0
1.25
0.125
%
Configuration
Charge
Termination
36
0
I2
Taper Current
0
1000
100
mA
Configuration
Charge
Termination
36
2
I2
Min Taper Capacity
0
1000
25
mAh
Configuration
Charge
Termination
36
4
I2
Cell Taper Voltage
0
1000
100
mV
Configuration
Charge
Termination
36
6
U1
Current Taper Window
0
60
40
s
Configuration
Charge
Termination
36
7
I1
TCA Set %
–1
100
99
%
Configuration
Charge
Termination
36
8
I1
TCA Clear %
–1
100
95
%
Configuration
Charge
Termination
36
9
I1
FC Set %
–1
100
100
%
Configuration
Charge
Termination
36
10
I1
FC Clear %
–1
100
98
%
Configuration
Charge
Termination
36
11
I2
DODatEOC Delta T
0
1000
100
0.1°C
Configuration
Charge
Termination
36
13
I2
NiMH Delta Temp
0
255
30
0.1°C
Configuration
Charge
Termination
36
15
U2
NiMH Delta Temp Time
0
1000
180
s
Configuration
Charge
Termination
36
17
U2
NiMH Hold Off Time
0
1000
100
s
Configuration
Charge
Termination
36
19
I2
NiMH Hold Off Current
0
32000
240
mA
Configuration
Charge
Termination
36
21
I2
NiMH Hold Off Temp
0
1000
250
0.1°C
Configuration
Charge
Termination
36
23
U1
NiMH Cell Negative Delta Volt
0
100
17
mV
Configuration
Charge
Termination
36
24
U1
NiMH Cell Negative Delta Time
0
255
16
s
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Table 7-11. Data Flash Summary (continued)
CLASS
SUBCLASS
SUBCLASS
ID
Configuration
Charge
Termination
36
25
I2
NiMH Cell Neg Delta Qual Volt
0
32767
4200
mV
Configuration
Data
48
2
U2
Manufacture Date
0
65535
0
Day +
Mo*32 +
(Yr
-1980)*256
Configuration
Data
48
4
H2
Serial Number
0
ffff
1
hex
Configuration
Data
48
6
U2
Cycle Count
0
65535
0
Counts
Configuration
Data
48
8
I2
CC Threshold
100
32767
900
mAh
Configuration
Data
48
10
U1
Max Error Limit
0
100
100
%
Configuration
Data
48
11
I2
Design Capacity
0
32767
1000
mAh
Configuration
Data
48
13
I2
Design Energy
0
32767
5400
mWh
Configuration
Data
48
15
I2
SOH Load I
–32767
0
–400
mA
Configuration
Data
48
17
U2
Cell Charge Voltage T1-T2
0
4600
4200
mV
Configuration
Data
48
19
U2
Cell Charge Voltage T2-T3
0
4600
4200
mV
Configuration
Data
48
21
U2
Cell Charge Voltage T3-T4
0
4600
4100
mV
Configuration
Data
48
23
U1
Charge Current T1-T2
0
100
10
%
Configuration
Data
48
24
U1
Charge Current T2-T3
0
100
50
%
Configuration
Data
48
25
U1
Charge Current T3-T4
0
100
30
%
Configuration
Data
48
26
I1
JEITA T1
–128
127
–10
°C
Configuration
Data
48
27
I1
JEITA T2
–128
127
10
°C
Configuration
Data
48
28
I1
JEITA T3
–128
127
45
°C
Configuration
Data
48
29
I1
JEITA T4
–128
127
55
°C
Configuration
Data
48
30
U1
Design Energy Scale
0
255
1
Num
Configuration
Data
48
31
S12
Device Name
x
x
BQ34Z100G1
—
Configuration
Data
48
43
S12
Manufacturer Name
x
x
Texas Inst.
—
Configuration
Data
48
55
S5
Device Chemistry
x
x
LION
—
Configuration
Discharge
49
0
U2
SOC1 Set Threshold
0
65535
150
mAh
Configuration
Discharge
49
2
U2
SOC1 Clear Threshold
0
65535
175
mAh
Configuration
Discharge
49
4
U2
SOCF Set Threshold
0
65535
75
mAh
Configuration
Discharge
49
6
U2
SOCF Clear Threshold
0
65535
100
mAh
Configuration
Discharge
49
8
I2
Cell BL Set Volt Threshold
0
5000
0
mV
Configuration
Discharge
49
10
U1
Cell BL Set Volt Time
0
60
0
s
Configuration
Discharge
49
11
I2
Cell BL Clear Volt Threshold
0
5000
5
mV
Configuration
Discharge
49
13
I2
Cell BH Set Volt Threshold
0
5000
4300
mV
Configuration
Discharge
49
15
U1
Cell BH Volt Time
0
60
2
s
Configuration
Discharge
49
16
I2
Cell BH Clear Volt Threshold
0
5000
5
mV
Configuration
Discharge
49
21
U1
Cycle Delta
0
255
5
0.01%
Configuration
Manufacturer
Data
56
0
H2
Pack Lot Code
0
ffff
0
hex
Configuration
Manufacturer
Data
56
2
H2
PCB Lot Code
0
ffff
0
hex
Configuration
Manufacturer
Data
56
4
H2
Firmware Version
0
ffff
0
hex
Configuration
Manufacturer
Data
56
6
H2
Hardware Revision
0
ffff
0
hex
Configuration
Manufacturer
Data
56
8
H2
Cell Revision
0
ffff
0
hex
Configuration
Manufacturer
Data
56
10
H2
DF Config Version
0
ffff
0
hex
Configuration
Lifetime Data
59
0
I2
Lifetime Max Temp
0
1400
300
0.1°C
Configuration
Lifetime Data
59
2
I2
Lifetime Min Temp
–600
1400
200
0.1°C
OFFSET
TYPE
NAME
MIN
MAX
DEFAULT
UNIT
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Table 7-11. Data Flash Summary (continued)
26
CLASS
SUBCLASS
SUBCLASS
ID
Configuration
Lifetime Data
59
4
I2
Lifetime Max Chg Current
–32767
32767
0
Configuration
Lifetime Data
59
6
I2
Lifetime Max Dsg Current
–32767
32767
0
mA
Configuration
Lifetime Data
59
8
U2
Lifetime Max Pack Voltage
0
65535
320
20 mV
Configuration
Lifetime Data
59
10
U2
Lifetime Min Pack Voltage
0
65535
350
20 mV
Configuration
Lifetime Temp
Samples
60
0
U2
LT Flash Cnt
0
65535
0
Counts
Configuration
Registers
64
0
H2
Pack Configuration
0
ffff
161
flags
Configuration
Registers
64
2
H1
Pack Configuration B
0
ff
ff
flags
Configuration
Registers
64
3
H1
Pack Configuration C
0
ff
30
flags
Configuration
Registers
64
4
H1
LED_Comm Configuration
0
ff
0
flags
Configuration
Registers
64
5
H2
Alert Configuration
0
ffff
0
flags
Configuration
Registers
64
7
U1
Number of series cell
0
100
1
Num
Configuration
Lifetime
Resolution
66
0
U1
LT Temp Res
0
255
10
0.1°C
Configuration
Lifetime
Resolution
66
1
U1
LT Cur Res
0
255
100
mA
Configuration
Lifetime
Resolution
66
2
U1
LT V Res
0
255
1
20 mV
Configuration
Lifetime
Resolution
66
3
U2
LT Update Time
0
65535
60
s
Configuration
LED Display
67
0
U1
LED Hold Time
0
255
4
Num
Configuration
Power
68
0
I2
Flash Update OK Cell Volt
0
4200
2800
mV
Configuration
Power
68
2
I2
Sleep Current
0
100
10
mA
Configuration
Power
68
11
U1
FS Wait
0
255
0
s
System Data
Manufacturer
Info
58
0
H1
Block A 0
0
ff
0
hex
System Data
Manufacturer
Info
58
1
H1
Block A 1
0
ff
0
hex
System Data
Manufacturer
Info
58
2
H1
Block A 2
0
ff
0
hex
System Data
Manufacturer
Info
58
3
H1
Block A 3
0
ff
0
hex
System Data
Manufacturer
Info
58
4
H1
Block A 4
0
ff
0
hex
System Data
Manufacturer
Info
58
5
H1
Block A 5
0
ff
0
hex
System Data
Manufacturer
Info
58
6
H1
Block A 6
0
ff
0
hex
System Data
Manufacturer
Info
58
7
H1
Block A 7
0
ff
0
hex
System Data
Manufacturer
Info
58
8
H1
Block A 8
0
ff
0
hex
System Data
Manufacturer
Info
58
9
H1
Block A 9
0
ff
0
hex
System Data
Manufacturer
Info
58
10
H1
Block A 10
0
ff
0
hex
System Data
Manufacturer
Info
58
11
H1
Block A 11
0
ff
0
hex
System Data
Manufacturer
Info
58
12
H1
Block A 12
0
ff
0
hex
System Data
Manufacturer
Info
58
13
H1
Block A 13
0
ff
0
hex
System Data
Manufacturer
Info
58
14
H1
Block A 14
0
ff
0
hex
System Data
Manufacturer
Info
58
15
H1
Block A 15
0
ff
0
hex
OFFSET
TYPE
NAME
MIN
MAX
DEFAULT
UNIT
mA
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Table 7-11. Data Flash Summary (continued)
CLASS
SUBCLASS
SUBCLASS
ID
System Data
Manufacturer
Info
58
16
H1
Block A 16
0
ff
0
hex
System Data
Manufacturer
Info
58
17
H1
Block A 17
0
ff
0
hex
System Data
Manufacturer
Info
58
18
H1
Block A 18
0
ff
0
hex
System Data
Manufacturer
Info
58
19
H1
Block A 19
0
ff
0
hex
System Data
Manufacturer
Info
58
20
H1
Block A 20
0
ff
0
hex
System Data
Manufacturer
Info
58
21
H1
Block A 21
0
ff
0
hex
System Data
Manufacturer
Info
58
22
H1
Block A 22
0
ff
0
hex
System Data
Manufacturer
Info
58
23
H1
Block A 23
0
ff
0
hex
System Data
Manufacturer
Info
58
24
H1
Block A 24
0
ff
0
hex
System Data
Manufacturer
Info
58
25
H1
Block A 25
0
ff
0
hex
System Data
Manufacturer
Info
58
26
H1
Block A 26
0
ff
0
hex
System Data
Manufacturer
Info
58
27
H1
Block A 27
0
ff
0
hex
System Data
Manufacturer
Info
58
28
H1
Block A 28
0
ff
0
hex
System Data
Manufacturer
Info
58
29
H1
Block A 29
0
ff
0
hex
System Data
Manufacturer
Info
58
30
H1
Block A 30
0
ff
0
hex
System Data
Manufacturer
Info
58
31
H1
Block A 31
0
ff
0
hex
Gas Gauging
IT Cfg
80
0
U1
Load Select
0
255
1
Num
Gas Gauging
IT Cfg
80
1
U1
Load Mode
0
255
0
Num
Gas Gauging
IT Cfg
80
10
I2
Res Current
0
1000
10
mA
Gas Gauging
IT Cfg
80
14
U1
Max Res Factor
0
255
50
Num
Gas Gauging
IT Cfg
80
15
U1
Min Res Factor
0
255
1
Num
Gas Gauging
IT Cfg
80
17
U2
Ra Filter
0
1000
500
Num
Gas Gauging
IT Cfg
80
47
U1
Min PassedChg NiMH-LA 1st
Qmax
1
100
50
%
Gas Gauging
IT Cfg
80
49
U1
Maximum Qmax Change
0
255
100
%
Gas Gauging
IT Cfg
80
53
I2
Cell Terminate Voltage
1000
3700
3000
mV
Gas Gauging
IT Cfg
80
55
I2
Cell Term V Delta
0
4200
200
mV
Gas Gauging
IT Cfg
80
58
U2
ResRelax Time
0
65534
500
s
Gas Gauging
IT Cfg
80
62
I2
User Rate-mA
–32767
32767
0
mA
Gas Gauging
IT Cfg
80
64
I2
User Rate-Pwr
–32767
32767
0
mW/cW
Gas Gauging
IT Cfg
80
66
I2
Reserve Cap-mAh
0
9000
0
mAh
Gas Gauging
IT Cfg
80
68
I2
Reserve Energy
0
14000
0
mWh/cWh
Gas Gauging
IT Cfg
80
72
U1
Max Scale Back Grid
0
15
4
Num
Gas Gauging
IT Cfg
80
73
U2
Cell Min DeltaV
0
65535
0
mV
Gas Gauging
IT Cfg
80
75
U1
Ra Max Delta
0
255
15
%
Gas Gauging
IT Cfg
80
76
I2
Design Resistance
1
32767
42
mΩ
Gas Gauging
IT Cfg
80
78
U1
Reference Grid
0
14
4
—
Gas Gauging
IT Cfg
80
79
U1
Qmax Max Delta %
0
100
10
mAh
Gas Gauging
IT Cfg
80
80
U2
Max Res Scale
0
32767
32000
Num
OFFSET
TYPE
NAME
MIN
MAX
DEFAULT
UNIT
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Table 7-11. Data Flash Summary (continued)
28
CLASS
SUBCLASS
SUBCLASS
ID
Gas Gauging
IT Cfg
80
82
Gas Gauging
IT Cfg
80
84
Gas Gauging
IT Cfg
80
Gas Gauging
IT Cfg
Gas Gauging
OFFSET
TYPE
NAME
MIN
MAX
DEFAULT
UNIT
U2
Min Res Scale
0
U1
Fast Scale Start SOC
0
32767
1
Num
100
10
89
I2
Charge Hys V Shift
%
0
2000
40
mV
80
91
I2
Smooth Relax Time
1
32767
1000
s
Current
Thresholds
81
0
I2
Dsg Current Threshold
0
2000
60
mA
Gas Gauging
Current
Thresholds
81
2
I2
Chg Current Threshold
0
2000
75
mA
Gas Gauging
Current
Thresholds
81
4
I2
Quit Current
0
1000
40
mA
Gas Gauging
Current
Thresholds
81
6
U2
Dsg Relax Time
0
8191
60
s
Gas Gauging
Current
Thresholds
81
8
U1
Chg Relax Time
0
255
60
s
Gas Gauging
Current
Thresholds
81
9
U2
Cell Max IR Correct
0
1000
400
mV
Gas Gauging
State
82
0
I2
Qmax Cell 0
0
32767
1000
mAh
Gas Gauging
State
82
2
U2
Cycle Count
0
65535
0
Num
Gas Gauging
State
82
4
H1
Update Status
0
6
0
Num
Gas Gauging
State
82
5
I2
Cell V at Chg Term
0
5000
4200
mV
Gas Gauging
State
82
7
I2
Avg I Last Run
–32768
32767
–299
mA
Gas Gauging
State
82
9
I2
Avg P Last Run
–32768
32767
–1131
mWh
Gas Gauging
State
82
11
I2
Cell Delta Voltage
–32768
32767
2
mV
Gas Gauging
State
82
13
I2
T Rise
0
32767
20
Num
Gas Gauging
State
82
15
I2
T Time Constant
0
32767
1000
Num
Ra Table
R_a0
88
0
H2
R_a0 Flag
0
ffff
ff55
Hex
Ra Table
R_a0
88
2
I2
R_a0 0
0
32767
105
Num
Ra Table
R_a0
88
4
I2
R_a0 1
0
32767
100
Num
Ra Table
R_a0
88
6
I2
R_a0 2
0
32767
113
Num
Ra Table
R_a0
88
8
I2
R_a0 3
0
32767
143
Num
Ra Table
R_a0
88
10
I2
R_a0 4
0
32767
98
Num
Ra Table
R_a0
88
12
I2
R_a0 5
0
32767
97
Num
Ra Table
R_a0
88
14
I2
R_a0 6
0
32767
108
Num
Ra Table
R_a0
88
16
I2
R_a0 7
0
32767
89
Num
Ra Table
R_a0
88
18
I2
R_a0 8
0
32767
86
Num
Ra Table
R_a0
88
20
I2
R_a0 9
0
32767
85
Num
Ra Table
R_a0
88
22
I2
R_a0 10
0
32767
87
Num
Ra Table
R_a0
88
24
I2
R_a0 11
0
32767
90
Num
Ra Table
R_a0
88
26
I2
R_a0 12
0
32767
110
Num
Ra Table
R_a0
88
28
I2
R_a0 13
0
32767
647
Num
Ra Table
R_a0
88
30
I2
R_a0 14
0
32767
1500
Num
Ra Table
R_a0x
89
0
H2
R_a0x Flag
0
ffff
ffff
Hex
Ra Table
R_a0x
89
2
I2
R_a0x 0
0
32767
105
Num
Ra Table
R_a0x
89
4
I2
R_a0x 1
0
32767
100
Num
Ra Table
R_a0x
89
6
I2
R_a0x 2
0
32767
113
Num
Ra Table
R_a0x
89
8
I2
R_a0x 3
0
32767
143
Num
Ra Table
R_a0x
89
10
I2
R_a0x 4
0
32767
98
Num
Ra Table
R_a0x
89
12
I2
R_a0x 5
0
32767
97
Num
Ra Table
R_a0x
89
14
I2
R_a0x 6
0
32767
108
Num
Ra Table
R_a0x
89
16
I2
R_a0x 7
0
32767
89
Num
Ra Table
R_a0x
89
18
I2
R_a0x 8
0
32767
86
Num
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Table 7-11. Data Flash Summary (continued)
CLASS
SUBCLASS
SUBCLASS
ID
Ra Table
R_a0x
89
20
Ra Table
R_a0x
89
22
Ra Table
R_a0x
89
Ra Table
R_a0x
OFFSET
TYPE
NAME
MIN
MAX
DEFAULT
UNIT
I2
R_a0x 9
0
32767
85
Num
I2
R_a0x 10
0
32767
87
Num
24
I2
R_a0x 11
0
32767
90
Num
89
26
I2
R_a0x 12
0
32767
110
Num
Ra Table
R_a0x
89
28
I2
R_a0x 13
0
32767
647
Num
Ra Table
R_a0x
89
30
I2
R_a0x 14
0
32767
1500
Num
Calibration
Data
104
0
F4
CC Gain
1.00E-01
4.00E+01
0.4768
mΩ
Calibration
Data
104
4
F4
CC Delta
2.98E+04 1.19E+06 567744.56
Calibration
Data
104
8
I2
CC Offset
–32768
32767
–1200
Calibration
Data
104
10
I1
Board Offset
–128
127
0
Num
Calibration
Data
104
11
I1
Int Temp Offset
–128
127
0
0.1°C
Calibration
Data
104
12
I1
Ext Temp Offset
–128
127
0
0.1°C
Calibration
Data
104
14
U2
Voltage Divider
0
65535
5000
mV
Calibration
Current
107
1
U1
Deadband
0
255
5
mA
Security
Codes
112
0
H4
Sealed to Unsealed
0
ffffffff
36720414
hex
Security
Codes
112
4
H4
Unsealed to Full
0
ffffffff
ffffffff
hex
Security
Codes
112
8
H4
Authen Key3
0
ffffffff
1234567
hex
Security
Codes
112
12
H4
Authen Key2
0
ffffffff
89abcdef
hex
Security
Codes
112
16
H4
Authen Key1
0
ffffffff
fedcba98
hex
Security
Codes
112
20
H4
Authen Key0
0
ffffffff
76543210
hex
mΩ
Num
Table 7-12. Data Flash (DF) to EVSW Conversion
CLASS
SUBCLASS
SUBCLASS OFFSET
ID
NAME
DATA
DATA TYPE FLASH
DEFAULT
DATA
FLASH
UNIT
EVSW
DEFAULT
EVSW
UNIT
DF to EVSW
CONVERSION
Data
48
Data
13
Manufacture
Date
U2
0
code
1-Jan-1980
Day+Mo*32+
(Yr-1980)*256
Gas
Gauging
80
IT Cfg
59
User RatemW
I2
0
cW
0
mW
DF × 10
Gas
Gauging
80
IT Cfg
63
Reserve
Cap-mWh
I2
0
cWh
0
mWh
DF × 10
Calibration
104
Data
0
CC Gain
F4
0.47095
Num
10.124
mΩ
4.768/DF
Calibration
104
Data
4
CC Delta
F4
5.595E5
Num
10.147
mΩ
5677445/DF
7.3.5 Fuel Gauging
The BQ34Z100-G1 measures the cell voltage, temperature, and current to determine the battery SOC based
in the Impedance Track algorithm (refer to Theory and Implementation of Impedance Track Battery FuelGauging Algorithm Application Report [SLUA450] for more information). The BQ34Z100-G1 monitors charge
and discharge activity by sensing the voltage across a small-value resistor (5 mΩ to 20 mΩ typ.) between the
SRP and SRN pins and in-series with the cell. By integrating charge passing through the battery, the cell’s SOC
is adjusted during battery charge or discharge.
The total battery capacity is found by comparing states of charge before and after applying the load with the
amount of charge passed. When an application load is applied, the impedance of the cell is measured by
comparing the OCV obtained from a predefined function for the present SOC with the measured voltage under
load. Measurements of OCV and charge integration determine chemical state-of-charge and Chemical Capacity
(Qmax). The initial Qmax value is taken from a cell manufacturers' data sheet multiplied by the number of
parallel cells. The parallel value is also used for the value programmed in Design Capacity. The BQ34Z100-G1
acquires and updates the battery-impedance profile during normal battery usage. It uses this profile, along with
SOC and the Qmax value, to determine FullChargeCapacity() and StateOfCharge() specifically for the present
load and temperature. FullChargeCapacity() is reported as capacity available from a fully charged battery under
the present load and temperature until Voltage() reaches the Terminate Voltage. NominalAvailableCapacity()
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and FullAvailableCapacity() are the uncompensated (no or light load) versions of RemainingCapacity() and
FullChargeCapacity(), respectively.
During normal battery usage there could be instances where a small rise of SOC for a short period of time could
occur at the beginning of discharge. The [RSOC_HOLD] option in Pack Configuration C prevents SOC rises
during discharge. SOC will be held until the calculated value falls below the actual state.
The BQ34Z100-G1 has two flags accessed by the Flags() function that warn when the battery’s SOC has
fallen to critical levels. When RemainingCapacity() falls below the first capacity threshold, specified in SOC1 Set
Threshold, the [SOC1] (State of Charge Initial) flag is set. The flag is cleared once RemainingCapacity() rises
above SOC1 Clear Threshold. All units are in mAh.
When RemainingCapacity() falls below the second capacity threshold, SOCF Set Threshold, the [SOCF] (State
of Charge Final) flag is set, serving as a final discharge warning. If SOCF Set Threshold = –1, the flag is
inoperative during discharge. Similarly, when RemainingCapacity() rises above SOCF Clear Threshold and the
[SOCF] flag has already been set, the [SOCF] flag is cleared. All units are in mAh.
The BQ34Z100-G1 includes charge efficiency compensation that makes use of four Charge Efficiency factors to
correct for energy lost due to heat. This is commonly used in NiMH and Lead-Acid chemistries and is not always
linear with respect to state-of-charge.
7.3.6 Impedance Track Variables
The BQ34Z100-G1 has several data flash variables that permit the user to customize the Impedance Track
algorithm for optimized performance. These variables are dependent upon the power characteristics of the
application as well as the cell itself.
7.3.6.1 Load Mode
Load Mode is used to select either the constant current or constant power model for the Impedance Track
algorithm as used in Load Select. See the Section 7.3.6.2 section. When Load Mode is 0, the Constant
Current Model is used (default). When Load Mode is 1, the Constant Power Model is used. The [LDMD] bit of
CONTROL_STATUS reflects the status of Load Mode.
7.3.6.2 Load Select
Load Select defines the type of power or current model to be used to compute load-compensated capacity in
the Impedance Track algorithm. If Load Mode = 0 (Constant Current), then the options presented in Table 7-13
are available.
Table 7-13. Current Model Used When Load Mode = 0
LOAD SELECT VALUE
0
1 (default)
CURRENT MODEL USED
Average discharge current from previous cycle: There is an internal register that records the average
discharge current through each entire discharge cycle. The previous average is stored in this register.
However, if this is the first cycle of the gauge, then the present average current is used.
Present average discharge current: This is the average discharge current from the beginning of this
discharge cycle until present time.
2
Average Current: based on the AverageCurrent()
3
Current: based on a low-pass-filtered version of AverageCurrent() (τ=14s)
4
Design Capacity/5: C Rate based off of Design Capacity /5 or a C/5 rate in mA.
6
Use the value in User_Rate-mA: This gives a completely user configurable method.
If Load Mode = 1 (Constant Power), then the following options are available:
Table 7-14. Constant-Power Model Used When Load Mode = 1
LOAD SELECT VALUE
0 (default)
1
30
POWER MODEL USED
Average discharge power from previous cycle: There is an internal register that records the average
discharge power through each entire discharge cycle. The previous average is stored in this register.
Present average discharge power: This is the average discharge power from the beginning of this discharge
cycle until present time.
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Table 7-14. Constant-Power Model Used When Load Mode = 1 (continued)
LOAD SELECT VALUE
POWER MODEL USED
2
Average Current × Voltage: based off the AverageCurrent() and Voltage().
3
Current × Voltage: based on a low-pass-filtered version of AverageCurrent() (τ=14s) and Voltage()
4
Design Energy/5: C Rate based off of Design Energy /5 or a C/5 rate in mA.
6
Use the value in User_Rate-mW/cW. This gives a completely user-configurable method.
7.3.6.3 Reserve Cap-mAh
Reserve Cap-mAh determines how much actual remaining capacity exists after reaching 0
RemainingCapacity() before Terminate Voltage is reached. A loaded rate or no-load rate of compensation
can be selected for Reserve Cap by setting the [RESCAP] bit in the Pack Configuration register.
7.3.6.4 Reserve Cap-mWh/cWh
Reserve Cap-mWh determines how much actual remaining capacity exists after reaching 0 AvailableEnergy()
before Terminate Voltage is reached. A loaded rate or no-load rate of compensation can be selected for
Reserve Cap by setting the [RESCAP] bit in the Pack Configuration register.
7.3.6.5 Design Energy Scale
Design Energy Scale is used to select the scale/unit of a set of data flash parameters. The value of Design
Energy Scale can be between 1 and 10 only.
When using Design Energy Scale > 1, the value for each of the parameters in Table 7-15 must be adjusted to
reflect the new units. See Section 7.3.12.
Table 7-15. Data Flash Parameter Scale/Unit-Based on Design Energy Scale
DATA FLASH PARAMETER
DESIGN ENERGY SCALE = 1 (default)
DESIGN ENERGY SCALE >1
Design Energy
mWh
Scaled by Design Energy Scale
Reserve Energy-mWh/cWh
mWh
Scaled by Design Energy Scale
Avg Power Last Run
mW
Scaled by Design Energy Scale
User Rate-mW/cW
mWh
Scaled by Design Energy Scale
T Rise
No Scale
Scaled by Design Energy Scale
7.3.6.6 Dsg Current Threshold
This register is used as a threshold by many functions in the BQ34Z100-G1 to determine if actual discharge
current is flowing into or out of the cell. The default for this register should be sufficient for most applications.
This threshold should be set low enough to be below any normal application load current but high enough to
prevent noise or drift from affecting the measurement.
7.3.6.7 Chg Current Threshold
This register is used as a threshold by many functions in the BQ34Z100-G1 to determine if actual charge current
is flowing into or out of the cell. The default for this register should be sufficient for most applications. This
threshold should be set low enough to be below any normal charge current but high enough to prevent noise or
drift from affecting the measurement.
7.3.6.8 Quit Current, Dsg Relax Time, Chg Relax Time, and Quit Relax Time
The Quit Current is used as part of the Impedance Track algorithm to determine when the BQ34Z100-G1 enters
RELAX mode from a current flowing mode in either the charge direction or the discharge direction. The value of
Quit Current is set to a default value that should be above the standby current of the host system.
Either of the following criteria must be met to enter RELAX mode:
1. |AverageCurrent()| < |Quit Current| for Dsg Relax Time
2. |AverageCurrent()| > |Quit Current| for Chg Relax Time
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After about 6 minutes in RELAX mode, the device attempts to take accurate OCV readings. An additional
requirement of dV/dt < 4 μV/s is required for the device to perform Qmax updates. These updates are used in
the Impedance Track algorithms. It is critical that the battery voltage be relaxed during OCV readings, and that
the current is not higher than C/20 when attempting to go into RELAX mode.
Quit Relax Time specifies the minimum time required for AverageCurrent() to remain above the Quit Current
threshold before exiting RELAX mode.
7.3.6.9 Qmax
Qmax Cell 0 contains the maximum chemical capacity of the cell and is determined by comparing states of
charge before and after applying the load with the amount of charge passed. It also corresponds to capacity
at low rate of discharge, such as C/20 rate. For high accuracy, this value is periodically updated by the device
during operation.
Based on the battery cell capacity information, the initial value of chemical capacity should be entered in the
Qmax Cell 0 data flash parameter. The Impedance Track algorithm will update this value and maintain it
internally in the gauge.
7.3.6.10 Update Status
The Update Status register indicates the status of the Impedance Track algorithm.
Table 7-16. Update Status Definitions
UPDATE STATUS
0x02
STATUS
Qmax and Ra data are learned, but Impedance Track is not enabled. This should be the standard
setting for a Golden Image File.
0x04
Impedance Track is enabled but Qmax and Ra data are not yet learned.
0x05
Impedance Track is enabled and only Qmax has been updated during a learning cycle.
0x06
Impedance Track is enabled. Qmax and Ra data are learned after a successful learning cycle. This
should be the operation setting for end equipment.
This register should only be updated by the device during a learning cycle or when the IT_ENABLE()
subcommand is received. Refer to the Preparing Optimized Default Flash Constants for Specific Battery Types
Application Report (SLUA334B).
7.3.6.11 Avg I Last Run
The device logs the current averaged from the beginning to the end of each discharge cycle. It stores this
average current from the previous discharge cycle in this register. This register should never be modified. It is
only updated by the device when required.
7.3.6.12 Avg P Last Run
The device logs the power averaged from the beginning to the end of each discharge cycle. It stores this
average power from the previous discharge cycle in this register. To get a correct average power reading, the
device continuously multiplies instantaneous current times Voltage() to get power. It then logs this data to derive
the average power. This register should never need to be modified. It is only updated by the device when the
required.
7.3.6.13 Cell Delta Voltage
The device stores the maximum difference of Voltage() during short load spikes and normal load, so the
Impedance Track algorithm can calculate remaining capacity for pulsed loads. It is not recommended to change
this value, as the device can learn this during operation.
7.3.6.14 Ra Tables
This data is automatically updated during device operation. No user changes should be made except for reading
the values from another pre-learned pack for creating Golden Image Files. Profiles have format Cell0 R_a M,
where M is the number that indicates state-of-charge to which the value corresponds.
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7.3.6.15 StateOfCharge() Smoothing
When operating conditions change (such as temperature, discharge current, and resistance, and so on), it
can lead to large changes of compensated battery capacity and battery capacity remaining. These changes
can result in large changes of StateOfCharge(). When [SmoothEn] is enabled in Pack Configuration C, the
smoothing algorithm injects gradual changes of battery capacity when conditions vary. This results in a gradual
change of StateOfCharge() and can provide a better end-user experience for StateOfCharge() reporting.
The RemainingCapacity(), FullChargeCapacity(), and StateOfCharge() are modified depending on [SmoothEn],
as below.
[SmoothEn]
RemainingCapacity()
FullChargeCapacity()
StateOfCharge()
0
TrueRC()
TrueFCC()
TrueRC() / TrueFCC()
1
FilteredRC()
FilteredFCC()
FilteredRC() /FilteredFCC()
7.3.6.16 Charge Efficiency
Tracking state-of-charge during the charge phase is relatively easy with chemistries such as Li-ion where
essentially none of the applied energy from the charger is lost to heat. However, lead-acid and NiMH chemistries
may demonstrate significant losses to heat during charging. Therefore, to more accurately track state of charge
and Time-to-Full during the charge phase, the BQ34Z100-G1 uses four charge-efficiency factors to compensate
for charge acceptance. These factors are Charge Efficiency, Charge Eff Reduction Rate, Charge Effi Drop
Off, and Charge Eff Temperature Compensation.
The BQ34Z100-G1 applies the Charge Efficiency when RelativeStateOfCharge() is less than the value stored
in Charge Efficiency Drop Off. When RelativeStateOfCharge() is > or equal to the value coded in Charge
Efficiency Drop Off, Charge Efficiency and Charge Efficiency Reduction Rate determine the charge
efficiency rate. Charge Efficiency Reduction Rate defines the percent efficiency reduction per percentage
point of RelativeStateOfCharge() over Charge Efficiency Drop Off. The Charge Efficiency Reduction Rate
has units of 0.1%. The BQ34Z100-G1 also adjusts the efficiency factors for temperature. Charge Efficiency
Temperature Compensation defines the percent efficiency reduction per degree C over 25°C. Charge
Efficiency Temperature Compensation has units of 0.01%.
Applying the four factors:
Effective Charge Efficiency % = Charge Efficiency – Charge Eff Reduction Rate [RSOC() – Charge Effi Drop
Off] – Charge Eff Temperature Compensation [Temperature – 25°C]
Where: RSOC() ≥ Charge Efficiency and Temperature ≥ 25°C
7.3.6.17 Lifetime Data Logging
The Lifetime Data Logging function helps development and diagnosis with the fuel gauge.
Note
IT_ENABLE must be enabled (Command 0x0021) for lifetime data logging functions to be active.
The fuel gauge logs the lifetime data as specified in the Lifetime Data and Lifetime Temp Samples data flash
subclasses. The data log recordings are controlled by the Lifetime Resolution data flash subclass.
The Lifetime Data Logging can be started by setting the IT_ENABLE bit and setting the LTUpdate Time register
to a non-zero value.
Once the Lifetime Data Logging function is enabled, the measured values are compared to what is already
stored in the data flash. If the measured value is higher than the maximum or lower than the minimum value
stored in the data flash by more than the "Resolution" set for at least one parameter, the entire Data Flash
Lifetime Registers are updated after at least LTUpdateTime.
LTUpdateTime sets the minimum update time between DF writes. When a new maximum or minimum is
detected, an LT Update window of [update time] second is enabled and the DF writes occur at the end of this
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window. Any additional max/min value detected within this window will also be updated. The first new max/min
value detected after this window will trigger the next LT Update window.
Internal to the fuel gauge, there exists a RAM maximum/minimum table in addition to the DF maximum/minimum
table. The RAM table is updated independent of the resolution parameters. The DF table is updated only if at
least one of the RAM parameters exceeds the DF value by more than the resolution associated with it. When DF
is updated, the entire RAM table is written to DF. Consequently, it is possible to see a new maximum or minimum
value for a certain parameter even if the value of this parameter never exceeds the maximum or minimum value
stored in the data flash for this parameter value by the resolution amount.
The Life Time Data Logging of one or more parameters can be reset or restarted by writing new default (or
starting) values to the corresponding data flash registers through sealed or unsealed access as described below.
However, when using unsealed access, new values will only take effect after device reset.
The logged data can be accessed as RW in UNSEALED mode from the Lifetime Data Subclass (Subclass ID
= 59) of data flash. Lifetime data may be accessed (RW) when sealed using a process identical Manufacturer
Info Block B. The DataFlashBlock command code is 4. Note only the first 32 bytes of lifetime data (not
resolution parameters) can be RW when sealed. See Section 7.3.3.2 for sealed access. The logging settings
such as Temperature Resolution, Voltage Resolution, Current Resolution, and Update Time can be configured
only in UNSEALED mode by writing to the Lifetime Resolution Subclass (SubclassID = 66) of the data flash.
The Lifetime resolution registers contain the parameters that set the limits related to how much a data parameter
must exceed the previously logged maximum/minimum value to be updated in the lifetime log. For example, V
must exceed MaxV by more than Voltage Resolution to update MaxV in the data flash.
7.3.7 Device Configuration
The BQ34Z100-G1 has many features that can be enabled, disabled, or modified through settings in the Pack
Configuration registers. These registers are programmed/read via the methods described in Section 7.3.3.1.
7.3.7.1 Pack Configuration Register
Table 7-17. Pack Configuration Register Bits
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
High Byte
RESCAP
CAL_EN
SCALED
RSVD
VOLTSEL
IWAKE
RSNS1
RSNS0
Low Byte
RFACTSTEP
SLEEP
RMFCC
NiDT
NiDV
QPCCLEAR
GNDSEL
TEMPS
Legend: RSVD = Reserved
RESCAP: No-load rate of compensation is applied to the reserve capacity calculation. True when set. Default is 0.
CAL_EN: When enabled, entering CALIBRATION mode is permitted. For special use only. Default = 0.
Scaled Capacity and/or Current bit. The mA, mAh, and cWh settings and reports will take on a value
that is artificially scaled. This setting has no actual effect within the gauge. It is the responsibility of
SCALED:
the host to reinterpret the reported values. Scaled current measurement is achieved by calibrating the
current measurement to a value lower than actual.
VOLTSEL:
This bit selects between the use of an internal or external battery voltage divider. The internal divider is
for single cell use only. Default is 0.
1 = External
0 = Internal
IWAKE/RSNS1/RSNS0: These bits configure the current wake function (see Table 7-23). Default is 0/0/1.
RFACTSTEP: Enables Ra step up/down to Max/Min Res Factor before disabling Ra updates. Default is 1.
SLEEP: The fuel gauge can enter sleep, if operating conditions allow. True when set. Default is 1.
RMFCC: RM is updated with the value from FCC on valid charge termination. True when set. Default is 1.
NiDT:
Performs primary charge termination using the ΔT/Δt algorithm. See Section 7.3.11. This bit is only
acted upon when a NiXX Chem ID is used.
NiDV:
Performs primary charge termination using the –ΔV algorithm. See Section 7.3.11. This bit is only acted
upon when a NiXX Chem ID is used.
QPCCLEAR: Upon exit from RELAX where a DOD update occurred, the QMAX Passed Charge is cleared.
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GNDSEL:
The ADC ground select control. The VSS pin is selected as ground reference when the bit is clear. Pin
10 is selected when the bit is set.
TEMPS:
Selects external thermistor for Temperature() measurements. True when set. Uses internal temp when
clear. Default is 1.
7.3.7.2 Pack Configuration B Register
Table 7-18. Pack Configuration B Register Bits
Bit 7
Bit 6
CHGDoDEoC
Bit 5
RSVD
Bit 4
VconsEN
Bit 3
RSVD
Bit 2
JEITA
Bit 1
LFPRelax
Bit 0
DoDWT
FConvEN
Legend: RSVD = Reserved
CHGDoDEoC: Enable DoD at EoC during charging only. True when set. Default is 1. Default setting is recommended.
VconsEN: Enable voltage measurement consistency check. True when set. Default is 1. Default setting is
recommended.
JEITA: Enables ChargingVoltage() and ChargingCurrent() to report data per the JEITA charging algorithm.
When disabled, the values programmed in Cell Charge Voltage T2–T3 and Charge Current T2–T3
are reported.
LFPRelax: Enables Lithium Iron Phosphate RELAX mode
DoDWT: Enable Dod weighting for LiFePO4 support when chemical ID 400 series is selected. True when set.
Default is 1.
FConvEN: Enable fast convergence algorithm. Default is 1. Default setting is recommended.
7.3.7.3 Pack Configuration C Register
Table 7-19. Pack Configuration C Register Bits
Bit 7
Bit 6
SOH_DISP
Bit 5
RSOC_HOLD
FF_NEAR_EDV
Bit 4
SleepWakeCHG
Bit 3
LOCK_0
Bit 2
Bit 1
RELAX_JUMP_ RELAX_SMOOTH
OK
_OK
Bit 0
SMOOTH
SOH_DISP: Enables State-of-Health Display
RSOC_HOLD: RSOC_HOLD enables RSOC Hold Feature preventing RSOC from increasing during discharge.
NOTE: It is recommended to disable RSOC_HOLD when SOC Smoothing is enabled (SMOOTH = 1).
FF_NEAR_EDV: Enables Fast Filter Near EDV
SleepWakeCHG: Enable for faster sampling in SLEEP mode. Default setting is recommended.
LOCK_0: Keep RemainingCapacity() and RelativeStateOfCharge() jumping back during relaxation after 0 is
reached during discharge.
RELAX_JUMP_OK: Allows RSOC jump during RELAX mode if [SMOOTH =1]
RELAX_SMOOTH_OK: Smooth RSOC during RELAX mode if [SMOOTH =1]
SMOOTH: Enabled RSOC Smoothing
7.3.8 Voltage Measurement and Calibration
The device is shipped with a factory configuration for the default case of the 1-series Li-ion cell. This can be
changed by setting the VOLTSEL bit in the Pack Configuration register and by setting the number of series cells
in the data flash configuration section.
Multi-cell applications, with voltages up to 65535 mV, may be gauged by using the appropriate input scaling
resistors such that the maximum battery voltage, under all conditions, appears at the BAT input as approximately
900 mV. The actual gain function is determined by a calibration process and the resulting voltage calibration
factor is stored in the data flash location Voltage Divider.
For single-cell applications, an external divider network is not required. Inside the IC, behind the BAT pin is a
nominal 5:1 voltage divider with 88 KΩ in the top leg and 22 KΩ in the bottom leg. This internal divider network
is enabled by clearing the VOLTSEL bit in the Pack Configuration register. This ratio is optimum for directly
measuring a single Li-ion cell where charge voltage is limited to 4.5 V.
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For higher voltage applications, an external resistor divider network should be implemented as per the reference
designs in this document. The quality of the divider resistors is very important to avoid gauging errors over
time and temperature. It is recommended to use 0.1% resistors with 25-ppm temperature coefficient. Alternately,
a matched network could be used that tracks its dividing ratio with temperature and age due to the similar
geometry of each element. Calculation of the series resistor can be made per the equation below.
Note
Exceeding Vin max mV results in a measurement with degraded linearity.
The bottom leg of the divider resistor should be in the range of 15 KΩ to 25 K, using 16.5 KΩ:
Rseries = 16500 Ω (Vin max mV – 900 mV)/900 mV
For all applications, the Voltage Divider value in data flash will be used by the firmware to calibrate the total
divider ratio. The nominal value for this parameter is the maximum expected value for the stack voltage. The
calibration routine adjusts the value to force the reported voltage to equal the actual applied voltage.
7.3.8.1 1S Example
For stack voltages under 4.5 V max, it is not necessary to provide an external voltage divider network. The
internal 5:1 divider should be selected by clearing the VOLTSEL bit in the Pack Configuration register. The
default value for Voltage Divider is 5000 (representing the internal 5000:1000 mV divider) when no external
divider resistor is used, and the default number of series cells = 1. In the 1-S case, there is usually no
requirement to calibrate the voltage measurement, since the internal divider is calibrated during factory test to
within 2 mV.
7.3.8.2 7S Example
In the multi-cell case, the hardware configuration is different. An external voltage divider network is calculated
using the Rseries formula above. The bottom leg of the divider should be in the range of 15 KΩ to 25 KΩ. For
more details on configuration, see Section 8.2.2.1.
7.3.8.3 Autocalibration
The device provides an autocalibration feature that will measure the voltage offset error across SRP and SRN
from time-to-time as operating conditions change. It subtracts the resulting offset error from normal sense
resistor voltage, VSR, for maximum measurement accuracy.
The gas gauge performs a single offset calibration when:
1. The interface lines stay low for a minimum of Bus Low Time and
2. VSR > Deadband.
The gas gauge also performs a single offset when:
1. The condition of AverageCurrent() ≤ Autocal Min Current and
2. {Voltage change since last offset calibration ≥ Delta Voltage} or {temperature change since last offset
calibration is greater than Delta Temperature for ≥ Autocal Time}.
Capacity and current measurements should continue at the last measured rate during the offset calibration when
these measurements cannot be performed. If the battery voltage drops more than Cal Abort during the offset
calibration, the load current has likely increased considerably; hence, the offset calibration will be aborted.
7.3.9 Temperature Measurement
The BQ34Z100-G1 can measure temperature via the on-chip temperature sensor or via the TS input, depending
on the setting of the [TEMPS] bit PackConfiguration(). The bit is set by using the PackConfiguration() function,
described in Section 7.3.2.
Temperature measurements are made by calling the Temperature() function (see Section 7.3.1.1 for specific
information).
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When an external thermistor is used, REG25 (pin 7) is used to bias the thermistor and TS (pin 11) is used to
measure the thermistor voltage (a pull-down circuit is implemented inside the device). The device then correlates
the voltage to temperature, assuming the thermistor is a Semitec 103AT or similar device.
7.3.10 Overtemperature Indication
7.3.10.1 Overtemperature: Charge
If during charging, Temperature() reaches the threshold of OT Chg for a period of OT Chg Time and
AverageCurrent() > Chg Current Threshold, then the [OTC] bit of Flags() is set. Note: If OT Chg Time =
0, then the feature is completely disabled.
When Temperature() falls to OT Chg Recovery, the [OTC] of Flags() is reset.
7.3.10.2 Overtemperature: Discharge
If during discharging Temperature() reaches the threshold of OT Dsg for a period of OT Dsg Time, and
AverageCurrent() ≤ –Dsg Current Threshold, then the [OTD] bit of Flags() is set. If OT Dsg Time = 0, then the
feature is completely disabled.
When Temperature() falls to OT Dsg Recovery, the [OTD] bit of Flags() is reset.
7.3.11 Charging and Charge Termination Indication
For proper BQ34Z100-G1 operation, the battery per cell charging voltage must be specified by the user in Cell
Charging Voltage. The default value for this variable is Charging Voltage = 4200 mV. This parameter should
be set to the recommended charging voltage for the entire battery stack divided by the number of series cells.
The device detects valid charge termination in one of three ways:
1. Current Taper method:
a. During two consecutive periods of Current Taper Window, the AverageCurrent() is less than Taper
Current AND
b. During the same periods, the accumulated change in capacity > 0.25 mAh /Taper Current Window
AND
c. Voltage() is > Charging Voltage – Charging Taper Voltage. When this occurs, the [CHG] bit of Flags()
is cleared. Also, if the [RMFCC] bit of Pack Configuration is set, and RemainingCapacity() is set equal to
FullChargeCapacity().
2. Delta Temperature (ΔT/Δt) method—For ΔT/Δt, the BQ34Z100-G1 detects an increase in temperature over
many seconds. The ΔT/Δt setting is programmable in the temperature step, Delta Temp (0°C – 25.5°C),
and the time step, Delta Temp Time (0 s–1000 s). Typical settings for 1°C/minute include 2°C/120 s and
3°C/180 s (default). Longer times may be used for increased slope resolution.
In addition to the ΔT/Δt timer, a holdoff timer starts when the battery is charged at more than Holdoff
Current (default is 240 mA), and the temperature is above Holdoff Temp. Until this timer expires, ΔT/Δt
detection is suspended. If Current() drops below Holdoff Current or Temperature() below Holdoff Temp,
the holdoff timer resets and restarts only when the current and temperature conditions are met again.
3. Negative Delta Voltage (–ΔV) method—For negative delta voltage, the BQ34Z100-G1 detects a charge
termination when the pack voltage drops during charging by Cell Negative Delta Volt for a period of Cell
Negative Delta Time during which time Voltage() must be greater than Cell Negative Qual Volt.
When either condition occurs, the Flags()[CHG] bit is cleared. Also, if the [RMFCC] bit of Pack Configuration is
set, and RemainingCapacity() is set equal to FullChargeCapacity().
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Cell Negative Delta Time
Cell Negative Delta Volt
Cell Negative Delta Qual Volt
Voltage()
Delta Temp
Temperature ()
Delta Temp Time
Holdoff Time
Current()
Holdoff Current
Figure 7-1. NiXX Termination
7.3.12 SCALED Mode
The device supports high current and high capacity batteries above 32.76 Amperes and 29 Ampere-Hours
indirectly by scaling the actual sense resistor value compared with the calibrated value stored in the device.
The need for this is due to the standardization of a 2-byte data command having a maximum representation
of +/–32767. When [SCALED] is set in the Pack Configuration register, this indicates that the current and
capacity data is scaled.
It is important to know that setting the SCALED flag does not actually change anything in the operation of the
gauge. It serves as a notice to the host that the various reported values should be reinterpreted based on the
scale used. Because the flag has no actual effect, it can be used to represent other scaling values. See Section
7.3.6.5.
Note
It is recommended to only scale by a value between 1 and 10 to optimize resolution and accuracy
while still extending the data range.
7.3.13 LED Display
The device supports multiple options for using one to 16 LEDs as an output device to display the remaining state
of charge, or, if Pack Configuration C [SOH_DISP] is set, then state-of-health. The LED/COMM Configuration
register determines the behavior.
Table 7-20. LED/COMM Configuration Bits
Bit 7
Bit 6
EXT_LED3
EXT_LED2
Bit 5
EXT_LED1
Bit 4
EXT_LED0
Bit 3
Bit 2
LED_ON
Bit 1
LED_Mode2
LED_Mode1
Bit 0
LED_Mode0
Bits 0, 1, 2 are a code for one of five modes. 0 = No LED, 1 = Single LED, 2 = Four LEDs, 3 = External LEDs
with I2C comm, 4 = External LEDs with HDQ comm.
Setting Bit 3, LED_ON, will cause the LED display to be always on, except in Single LED mode where it is not
applicable. When clear (default), the LED pattern will only be displayed after holding an LED display button for
one to two seconds. The button applies 2.5 V from REG25 pin 7 to VEN pin 2 (refer to Section 8.2). The LED
Hold Time parameter may be used to configure how long the LED display remains on if LED_ON is clear. LED
Hold Time configures the update interval for the LED display if LED_ON is set.
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Bits 4, 5, 6, and 7 are a binary code for number of external LEDs. Code 0 is reserved. Codes 1 through 15
represents 2~16 external LEDs. So, number of External LEDs is 1 + Value of the 4-bit binary code. Display of
Remaining Capacity RemainingCapacity()or StateOfHealth() will be evenly divided among the selected number
of LEDs.
Single LED mode—Upon detecting an A/D value representing 2.5 V on the VEN pin, Single LED mode will
toggle the LED as duty cycle on within a period of 1 s where each 1% of RSOC is a 7.8125-ms high time. So,
for example, 10% RSOC or SOH will have the LED on for 78.1 ms and off for 921.9 ms. 90% RSOC or SOH will
have the LED on for 703.125 ms and off for 296.875 ms. Any value > 90% will display as 90%.
Four-LED mode—Upon detecting an A/D value representing 2.5 V on the VEN pin, Four-LED mode will display
the RSOC or SOH by driving pins RC2(LED1), RC0(LED2), RA1(LED3),RA2(LED4) in a proportional manner
where each LED represents 25% of the remaining state-of-charge. For example, if RSOC or SOH = 67%, three
LEDs will be illuminated.
External LED mode—Upon detecting an A/D value representing 2.5 V on the VEN pin, External LED mode will
transmit the RSOC into an SN74HC164 (for 2–8 LEDs) or two SN74HC164 devices (for 9–16 LEDs) using a
bit-banged approach with RC2 as Clock and RC0 as Data (see Figure 8-4). LEDs will be lit for a number of
seconds as defined in a data flash parameter. Refer to the SN54HC164, SN74HC164 8-Bit Parallel-Out Serial
Shift Registers Data Sheet (SCLS115E) for details on these devices.
Extended commands are available to turn the LEDs on and off for test purposes.
7.3.14 Alert Signal
Based on the selected LED mode, various options are available for the hardware implementation of an Alert
signal. Software configuration of the Alert Configuration register determines which alert conditions will assert the
ALERT pin.
Table 7-21. ALERT Signal Pins
MODE
DESCRIPTION
ALERT PIN
ALERT PIN NAME
CONFIG REGISTER
COMMENT
HEX CODE
0
No LED
1
P2
0
1
Single LED
1
P2
1
2
4 LED
11
P6
2
3
5-LED Expander with I2C
Host Comm
12
P5
43
3
10-LED Expander with I2C
Host Comm
12
P5
93
4
5-LED Expander with HDQ
Host Comm
13
P4
44
4
10-LED Expander with HDQ
Host Comm
13
P4
94
Filter and FETs are required to
eliminate temperature sense pulses.
See Section 8.2.
The port used for the Alert output will depend on the mode setting in LED/Comm Configuration as defined
in Table 7-21. The default mode is 0. The ALERT pin will be asserted by driving LOW. However, note that in
LED/COM mode 2, pin TS/P6, which has a dual purpose as temperature sense pin, will be driven low except
when temperature measurements are made each second. See the reference schematic (Figure 8-4) for filter
implementation details if host alert sensing requires a continuous signal.
The ALERT pin will be a logical OR of the selected bits in the new configuration register when asserted in the
Flags register. The default value for Alert Configuration register is 0.
Table 7-22. Alert Configuration Register Bit Definitions
Bit 7
High Byte
OTC
Bit 6
OTD
Bit 5
BAT_HIGH
Bit 4
BATLOW
Bit 3
CHG_INH
Bit 2
XCHG
Bit 1
Bit 0
FC
CHG
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Table 7-22. Alert Configuration Register Bit Definitions (continued)
Bit 7
Low Byte
Bit 6
OCVTAKEN
RSVD
Bit 5
RSVD
Bit 4
Bit 3
CF
RSVD
Bit 2
Bit 1
RCA
EOD
Bit 0
DSG
Legend: RSVD = Reserved
OTC: Over-Temperature in Charge condition is detected. ALERT is enabled when set.
OTD: Over-Temperature in Discharge condition is detected. ALERT is enabled when set.
BAT_HIGH: Battery High bit that indicates a high battery voltage condition. Refer to the data flash CELL BH parameters for
threshold settings. ALERT is enabled when set.
BATLOW: Battery Low bit that indicates a low battery voltage condition. Refer to the data flash parameters for threshold
settings. ALERT is enabled when set.
CHG_INH: Charge Inhibit: unable to begin charging. Refer to the data flash [Charge Inhibit Temp Low, Charge Inhibit Temp
High] parameters. ALERT is enabled when set.
XCHG: Charging disallowed ALERT is enabled when set.
FC: Full charge is detected. FC is set when charge termination is reached and FC Set% = –1 (see Section 7.3.11 for
details) or StateOfCharge() is larger than FC Set% and FC Set% is not –1. ALERT is enabled when set.
CHG: (Fast) charging allowed. ALERT is enabled when set.
OCVTAKEN: Cleared on entry to RELAX mode and set to 1 when OCV measurement is performed in RELAX mode. ALERT is
enabled when set.
CF: Condition Flag set. ALERT is enabled when set.
RCA: Remaining Capacity Alarm reached. ALERT is enabled when set.
EOD: End-of-Discharge Threshold reached. ALERT is enabled when set.
DSG: Discharging detected. ALERT is enabled when set.
7.3.15 Communications
7.3.15.1 Authentication
The BQ34Z100-G1 can act as a SHA-1/HMAC authentication slave by using its internal engine. Sending a
160-bit SHA-1 challenge message to the device will cause the IC to return a 160-bit digest, based upon
the challenge message and hidden plain-text authentication keys. When this digest matches an identical one
generated by a host or dedicated authentication master (operating on the same challenge message and using
the same plain text keys), the authentication process is successful.
The device contains a default plain-text authentication key of 0x0123456789ABCDEFFEDCBA987654321. If
using the device's internal authentication engine, the default key can be used for development purposes, but
should be changed to a secret key and the part immediately sealed before putting a pack into operation.
7.3.15.2 Key Programming
When the device's SHA-1/HMAC internal engine is used, authentication keys are stored as plain-text in memory.
A plain-text authentication key can only be written to the device while the IC is in UNSEALED mode. Once
the IC is UNSEALED, a 0x00 is written to BlockDataControl() to enable the authentication data commands.
Next, subclass ID and offset are specified by writing 0x70 and 0x00 to DataFlashClass() and DataFlashBlock(),
respectively. The device is now prepared to receive the 16-byte plain-text key, which must begin at command
location 0x4C. The key is accepted once a successful checksum has been written to BlockDataChecksum() for
the entire 32-byte block (0x40 through 0x5F), not just the 16-byte key.
7.3.15.3 Executing an Authentication Query
To execute an authentication query in UNSEALED mode, a host must first write 0x01 to the BlockDataControl()
command to enable the authentication data commands. If in SEALED mode, 0x00 must be written to
DataFlashBlock().
Next, the host writes a 20-byte authentication challenge to the AuthenticateData() address locations (0x40
through 0x53). After a valid checksum for the challenge is written to AuthenticateChecksum(), the device uses
the challenge to perform its own SHA-1/HMAC computation in conjunction with its programmed keys. The
40
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resulting digest is written to AuthenticateData(), overwriting the pre-existing challenge. The host may then read
this response and compare it against the result created by its own parallel computation.
7.3.15.4 HDQ Single-Pin Serial Interface
The HDQ interface is an asynchronous return-to-one protocol where a processor sends the command code to
the device. With HDQ, the least significant bit (LSB) of a data byte (command) or word (data) is transmitted first.
Note that the DATA signal on pin 12 is open-drain and requires an external pull-up resistor. The 8-bit command
code consists of two fields: the 7-bit HDQ command code (bits 0–6) and the 1-bit R/W field (MSB Bit 7). The
R/W field directs the device either to:
•
•
Store the next 8 or 16 bits of data to a specified register or
Output 8 or 16 bits of data from the specified register.
The HDQ peripheral can transmit and receive data as either an HDQ master or slave.
The return-to-one data bit frame of HDQ consists of three distinct sections. The first section is used to start the
transmission by either the host or by the device taking the DATA pin to a logic-low state for a time tSTRH,B. The
next section is for data transmission where the data is valid for a time tDSU after the negative edge used to start
communication. The data is held until a time tDV, allowing the host or device time to sample the data bit. The final
section is used to stop the transmission by returning the DATA pin to a logic-high state by at least a time tSSU
after the negative edge used to start communication. The final logic-high state is held until the end of tCYCH,B,
allowing time to ensure the transmission was stopped correctly. The timing for data and break communication is
shown in Section 6.13.
HDQ serial communication is normally initiated by the host processor sending a break command to the device.
A break is detected when the DATA pin is driven to a logic-low state for a time tB or greater. The DATA pin
should then be returned to its normal ready high logic state for a time tBR. The device is now ready to receive
information from the host processor.
The device is shipped in the I2C mode. TI provides tools can be used to switch from I2C to HDQ
communications.
7.3.15.5 I2C Interface
The gas gauge supports the standard I2C read, incremental read, one-byte write quick read, and functions. The
7-bit device address (ADDR) is the most significant 7 bits of the hex address and is fixed as 1010101. The 8-bit
device address is therefore 0xAA or 0xAB for write or read, respectively.
Host Generated
S
0 A
ADDR[6:0]
Fuel Gauge Generated
CMD[7:0]
A
A P
DATA[7:0]
S
1
ADDR[6:0]
(a) 1-byte write
S
ADDR[6:0]
0 A
A
DATA[7:0]
N P
(b) quick read
CMD[7:0]
A Sr
ADDR[6:0]
1
A
DATA[7:0]
N P
...
DATA[7:0]
(c) 1-byte read
S
ADDR[6:0]
0 A
CMD[7:0]
A Sr
ADDR[6:0]
1
A
DATA[7:0]
A
N P
(d) incremental read
Figure 7-2. Supported I2C formats: (a) 1-byte write, (b) quick read, (c) 1 byte-read, and (d) incremental
read (S = Start, Sr = Repeated Start, A = Acknowledge, N = No Acknowledge, and P = Stop).
The “quick read” returns data at the address indicated by the address pointer. The address pointer, a register
internal to the I2C communication engine, increments whenever data is acknowledged by the device or the I2C
master. “Quick writes” function in the same manner and are a convenient means of sending multiple bytes to
consecutive command locations (such as 2-byte commands that require two bytes of data).
S
ADDR[6:0]
0
A
CMD[7:0]
A
DATA[7:0]
A
P
Figure 7-3. Attempt To Write a Read-Only Address (Nack After Data Sent By Master)
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S
0
ADDR[6:0]
CMD[7:0]
A
N P
Figure 7-4. Attempt To Read An Address Above 0x7F (Nack Command)
S
ADDR[6:0]
0 A
CMD[7:0]
A
DATA[7:0]
A
DATA[7:0]
N
...
N P
Figure 7-5. Attempt At Incremental Writes (nack All Extra Data Bytes Sent)
S
ADDR[6:0]
0 A
CMD[7:0]
A Sr
ADDR[6:0]
1
A
DATA[7:0]
Address
0x7F
A
...
DATA[7:0]
Data From
addr 0x7F
N P
Data From
addr 0x00
Figure 7-6. Incremental Read at the Maximum Allowed Read Address
The I2C engine releases both SDA and SCL if the I2C bus is held low for Bus Low Time. If the gas gauge was
holding the lines, releasing them frees the master to drive the lines. If an external condition is holding either of
the lines low, the I2C engine enters the low-power SLEEP mode.
7.3.15.6 Switching Between I2C and HDQ Modes
Texas Instruments ships the BQ34Z100-G1 device in I2C mode (factory default); however, this mode can be
changed to HDQ mode if needed.
Note
To make changes in the data flash, the device must be in I2C mode.
7.3.15.6.1 Converting to HDQ Mode
Using the Battery Management Studio (bqStudio) tool to configure the BQ34Z100-G1 to HDQ mode, a write to
the Control command [0x00] of [0x7C40] is required.
To configure HDQ mode with bqStudio:
1. Navigate to the Registers screen. HDQ mode is configured by writing data [0x7C40] to Control command
[0x00].
2. Click on the Control value field.
3. Write 0x7C40 into the text field and click OK. Because the change in communication protocol involves
writing a flag for the new protocol to data flash, it takes about 200 ms to complete. During this time,
communications are disabled. Once the command takes effect, the bqStudio will no longer communicate
with the gauge.
4. Close bqStudio. Change communication connections from the gauge to the HDQ port of the EV2400 device
(www.ti.com/tool/ev2400 for more information). Run bqStudio. The bqStudio auto-detection only works for
devices that operate in I2C mode.
When the BQ34Z100-G1 device is in HDQ mode, it will not be detected.
5. Select BQ34Z100-G1 manually. Click OK to all messages that indicate that the device is not detected or not
responsive. When the Registers screen starts, it will take a period of time from when bqStudio first tries to
communicate with the device in I2C before trying HDQ mode.
Once it is complete, the Registers screen will display data as it had done initially when it was in I2C mode. The
refresh is noticeably slower, due to the slow speed of HDQ.
Use the Registers screen only while the BQ34Z100-G1 is in HDQ mode. All other functions will not be supported
in Battery Management Studio.
7.3.15.6.2 Converting to I2C Mode
Texas Instruments ships the BQ34Z100-G1 device in I2C mode, which is required when updating data flash.
However, this mode can be changed to HDQ mode if needed.
42
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To configure the device to use I2C mode when presently in the HDQ mode, a write to the Control command
[0x00] of [0x29E7] is required. Use the Battery Management Studio (bqStudio) tool, as follows:
1. Click on the Control value field. Write [0x29E7] in the text field and click OK. Once the command takes
effect, bqStudio will no longer communicate with the gauge.
2. Close bqStudio. Change communication connections from the gauge to the I2C port of the EV2400 device.
Run bqStudio.
7.3.16 Power Control
7.3.16.1 Reset Functions
When the device detects either a hardware or software reset ( MRST pin is driven low or the [RESET] bit of
Control() is initiated, respectively), it determines the type of reset and increments the corresponding counter.
This information is accessible by issuing the command Control() function with the RESET_DATA subcommand.
As shown in Figure 7-7, if a partial reset was detected, a RAM checksum is generated and compared against the
previously stored checksum. If the checksum values do not match, the RAM is reinitialized (a “Full Reset”). The
stored checksum is updated every time RAM is altered.
DEVICE RESET
Generate Active
RAM checksum
value
NO
Do the Checksum
Values Match?
Stored
checksum
Re-initialize all
RAM
YES
NORMAL
OPERATION
NO
Active RAM
changed ?
YES
Store
checksum
Generate new
checksum value
Figure 7-7. Partial Reset Flow Diagram
7.3.16.2 Wake-Up Comparator
The wake up comparator is used to indicate a change in cell current while the device is in SLEEP mode.
PackConfiguration() uses bits [RSNS1–RSNS0] to set the sense resistor selection. PackConfiguration() uses the
[IWAKE] bit to select one of two possible voltage threshold ranges for the given sense resistor selection. An
internal interrupt is generated when the threshold is breached in either charge or discharge directions. A setting
of 0x00 of RSNS1..0 disables this feature.
Table 7-23. IWAKE t=Threshold Settings
RSNS1 (1)
RSNS0
IWAKE
Vth(SRP–SRN)
0
0
0
Disabled
0
0
1
Disabled
0
1
0
+1.25 mV or –1.25 mV
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Table 7-23. IWAKE t=Threshold Settings (continued)
RSNS1 (1)
(1)
RSNS0
IWAKE
Vth(SRP–SRN)
0
1
1
+2.5 mV or –2.5 mV
1
0
0
+2.5 mV or –2.5 mV
1
0
1
+5 mV or –5 mV
1
1
0
+5 mV or –5 mV
1
1
1
+10 mV or –10 mV
The actual resistance value vs. the setting of the sense resistor is not important. Only the actual voltage threshold when calculating the
configuration is important.
7.3.16.3 Flash Updates
Data flash can only be updated if Voltage() ≥ Flash Update OK Voltage. Flash programming current can cause
an increase in LDO dropout. The value of Flash Update OK Voltage should be selected such that the
device VCC voltage does not fall below its minimum of 2.4 V during Flash write operations. The default value of
2800 mV is appropriate; however, for more information, refer to Step 3.
7.4 Device Functional Modes
The device has three power modes: NORMAL mode, SLEEP mode, and FULL SLEEP mode.
• In NORMAL mode, the device is fully powered and can execute any allowable task.
• In SLEEP mode, the gas gauge exists in a reduced-power state, periodically taking measurements and
performing calculations.
• In FULL SLEEP mode, the high frequency oscillator is turned off, and power consumption is further reduced
compared to SLEEP mode.
7.4.1 NORMAL Mode
The gas gauge is in NORMAL mode when not in any other power mode. During this mode, AverageCurrent(),
Voltage(), and Temperature() measurements are taken, and the interface data set is updated. Determinations to
change states are also made. This mode is exited by activating a different power mode.
7.4.2 SLEEP Mode
SLEEP mode is entered automatically if the feature is enabled (Pack Configuration [SLEEP] = 1) and Average
Current() is below the programmable level Sleep Current. Once entry to sleep has been qualified but prior to
entry to SLEEP mode, the device performs an ADC autocalibration to minimize offset. Entry to SLEEP mode
can be disabled by the [SLEEP] bit of Pack Configuration(), where 0 = disabled and 1 = enabled. During SLEEP
mode, the device periodically wakes to take data measurements and updates the data set, after which it then
returns directly to SLEEP. The device exits SLEEP if any entry condition is broken, a change in protection status
occurs, or a current in excess of IWAKE through RSENSE is detected.
7.4.3 FULL SLEEP Mode
FULL SLEEP mode is entered automatically when the device is in SLEEP mode and the timer counts down to 0
(Full Sleep Wait Time > 0). FULL SLEEP mode is disabled when Full Sleep Wait Time is set to 0.
During FULL SLEEP mode, the device periodically takes data measurements and updates its data set. However,
a majority of its time is spent in an idle condition.
The gauge exits the FULL SLEEP mode when there is any communication activity. Therefore, the execution of
SET_FULLSLEEP sets [FULLSLEEP] bit, but the EVSW might still display the bit clear. The FULL SLEEP mode
can be verified by measuring the current consumption of the gauge. In this mode, the high frequency oscillator is
turned off. The power consumption is further reduced compared to the SLEEP mode.
While in FULL SLEEP mode, the fuel gauge can suspend serial communications as much as 4 ms by holding
the communication line(s) low. This delay is necessary to correctly process host communication since the fuel
gauge processor is mostly halted. For HDQ communication one host message will be dropped.
44
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The BQ34Z100-G1 is a flexible gas gauge device with many options. The major configuration choices comprise
the battery chemistry, digital interface, and display.
8.2 Typical Applications
Figure 8-1 is a simplified diagram of the main features of the BQ34Z100-G1. Specific implementations detailing
the main configuration options are shown later in this section.
Figure 8-1. BQ34Z100-G1 Simplified Implementation
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45
46
TB3
2
3
BAT -
1
PACK -
BAT +
GND
AGND
REGIN
AGND
R30
.010 75ppm
C2
0.1uF
AGND
R5
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100
R6
100
1K
R1
C6
C5
LED Display
SW1
P1
U2
0.1uF
C8
REG25
REGIN
CE
BAT
P1
VEN
P2
1uF
C7
8
9
10
11
12
13
14
0.1uF
VSS
SRP
SRN
P6/TS
P5/HDQ
P4/SCL
P3/SDA
BQ34Z100PW
0.1uF
7
6
5
4
2
3
P2
C1
0.1uF
1
AGND
LED0
LED1
LED2
LED3
LED4
REGIN
R14
100
GND
D3
QTLP610C-4 GRN
R12
R11
R10
D11 QTLP610C-4 GRN
D12 QTLP610C-4 GRN
R9
R8
P1
470
470
470
470
470
GND
GND
GND
J9
4
7
6
5
4
3
2
1
1
2
3
U3
GND
GND
QD
QC
QB
QA
B
A
CLK
~CLR
QE
QF
QG
QH
VCC
SN74HC164PW
J10
8
9
10
11
12
13
14
REGIN
HDQ or ALERT
GND
SDA
SCLor ALERT
1
2
4
3
P2
C3
0.1uF
Copyright © 2016 , Texas Instruments Incorporated
R13
100
AZ23C5V6-7
D2
GND
R55
100
R53
100
D10 QTLP610C-4 GRN
D9 QTLP610C-4 GRN
RT1
10K
D1
AZ23C5V6-7
R56
100
R54
100
GND
SLUSBZ5D – JANUARY 2015 – REVISED APRIL 2021
BQ34Z100-G1
www.ti.com
The BQ34Z100-G1 can be used to provide a single Li-ion cell gas gauge with a 5-bar LED display.
Figure 8-2. 1-Cell Li-ion and 5-LED Display
The BQ34Z100-G1 can also be used to provide a gas gauge for a multi-cell Li-ion battery with a 5-bar LED
display.
Copyright © 2021 Texas Instruments Incorporated
SH1 SH2
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: BQ34Z100-G1
SH1
SH2
GND
AGND
R30
.010 75ppm *
* Optimize for required voltage and current
3
PACK TB3
1
2
BAT +
BAT -
10k *
R3
R1
Q3
2N7002
0.1uF
C2
AGND
GND
BZT52C5V6T
R7
D
AGND
3
REGIN
16.5 K .1% 25PPM *
VOLTAGE DIVIDER .1% 25PPM *
D7
Q5
BSS84
R4
165K *
G
1
R2
100K *
2 S
AGND
R6
R5
LED Display
SW1
3300 pF
C1
GND
Q4
2N7002
100
100
P2
1k
R15
P1
C6
C5
REG25
2
1
VEN
P2
0.1uF
C8
REG25
REGIN
CE
BAT
P1
0.1uF
7
6
5
4
3
U2
1uF
14
13
C7
8
9
10
11
12
0.1uF
VSS
SRP
SRN
P6/TS
P5/HDQ
P4/SCL
P3/SDA
BQ34Z100PW
AGND
REG25
RT1
10K
LED0
LED1
LED2
LED3
LED4
REGIN
D1
GND
GND
R11
R12
QTLP610C-4 GRN
D3
D12 QTLP610C-4 GRN
R9
R10
D11 QTLP610C-4 GRN
R8
P1
AZ23C5V6-7
D2
D10 QTLP610C-4 GRN
D9 QTLP610C-4 GRN
R14
100
R13
100
1k
1k
1k
1k
1k
GND
7
6
5
4
3
2
1
GND
QD
QC
QB
QA
B
A
U3
CLK
~CLR
QE
QF
QG
QH
VCC
SN74HC164PW
8
9
10
11
12
13
14
GND
GND
J9
4
3
REGIN
1
2
P2
C3
J10
0.1uF
GND
GND
HDQ or ALERT
GND
SDA
1
SCLor ALERT
4
3
2
Copyright © 2016, Texas Instruments Incorporated
R55
100
R56
100
AZ23C5V6-7
R53
100
R54
100
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SLUSBZ5D – JANUARY 2015 – REVISED APRIL 2021
BQ34Z100-G1
Figure 8-3. Multi-Cell and 5-LED Display
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47
BAT -
BAT +
PACK -
TB3
1
2
3
GND
R30
.010 75ppm
AGND
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R12
R18
R20
R22
R23
R24
D13 QTLP610C-3 YEL
D14 QTLP610C-3 YEL
D15 QTLP610C-4 GRN
D16 QTLP610C-4 GRN
D17 QTLP610C-4 GRN
D6
6
TP4
U3
U1
CLK
~CLR
QE
QF
QG
QH
VCC
GND
QD
QC
QB
QA
B
A
CLK
~CLR
QE
QF
QG
QH
VCC
SN74HC164PW
GND
QD
QC
QB
QA
B
A
0.1uF
TP6
TP5
8
9
11
TP7
TP8
GND
C5
REGIN
0.1uF
C8
REG25
REGIN
CE
BAT
P1
VEN
1uF
8
9
10
11
12
13
14
0.1uF
C7
VSS
SRP
SRN
P6/TS
P5/HDQ
P4/SCL
P3/SDA
U2
BQ34Z1X0 PW
P2
0.1uF
7
6
5
4
3
2
1
Optimize for required LED power dissipation
AGND
QTLP610C-4 GRN
GND
R32
1M
Q1
2SK3019
LED A
Open for I2C
J1
2
I2C pullups normally implemented in the host. Duplicated here since EV2300 does not provide
C6
R38
1k
REG25
GND
P2
100
R6
0.1uF
100
C4
P1
P2
LED Display
R5
C3
AGND
0.1uF
SW1
GND
P4
LED B
GND
GND
R33
1M
Q2
2SK3019
D8
1.5K
R15
1uF
C1
R7
2M
2SK3019
Q7
GND
P3
3
GND
D3
R16
1.5K
R21
220K
D4
R17
1.5K
GND
R29
10k
LED C
Q6
2SK3019
RT1
10K
REGIN
P2
REG25
A
B
P1
P2
P3
P4
D
D5
R19
1.5K
C
R14
100
GND
1
2
3
4
5
6
7
8
9
10
J6
EXT
A
B
C
D
100
R13
AZ23C5V6-7
D2
GND
LED CONFIGURATION OPTIONS
ALERT CONFIGURATION
200
R25
D1
AZ23C5V6-7
R34
100
100
R36
1
J7
4
3
1
2
2
3
TB1
J4
GND
ALERT
GND
HDQ
GND
SCL
1
SDA
4
3
2
Fiducial Marks
GND
GND
GND
Copyright © 2016 , Texas Instruments Incorporated
REGIN
LED D
J3
R31
10k
R37
100
R35
100
BQ34Z100-G1
4
3
48V
10
12
13
14
8
9
10
11
12
13
14
>5V
>5V