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bq76200
SLUSC16B – NOVEMBER 2015 – REVISED MARCH 2019
bq76200 high-voltage battery pack front-end charge/discharge high-side NFET driver
1 Features
3 Description
•
The bq76200 device is a low-power, high-side, Nchannel system. A high-side protection avoids ground
disconnection in the system and also allows
continuous communication between the battery pack
and host system. The device has additional PChannel FET control to allow low-current pre-charge
to a deeply depleted battery, and a PACK+ voltage
monitor control for the host to sense the PACK+
voltage.
1
•
•
•
•
•
•
•
•
•
CHG and DSG high-side NMOS FET drivers for
battery protection fast FET turn-on and turn-off
times
Pre-charge PFET driver (for current-limited precharge of significantly depleted cell-pack)
Independent digital enable control for charging
and discharging
Minimal external components needed
Scalable external capacitor-based charge pump to
accommodate a different range of FETs in parallel
High-voltage tolerant (100-V absolute maximum)
Internal switch to enable pack-voltage sensing
Common and separate charge and discharge path
configuration support
Designed to work directly with bq76940, bq76930,
and bq76920 battery monitors
Current consumption:
– NORMAL mode: 40 µA
– SHUTDOWN: < 10 µA maximum
The independent enable inputs allow CHG and DSG
FETs to be turned on and off separately, offering
great implementation flexibility in battery systems.
The bq76200 device can be used with a companion
analog front end (AFE) device such as the
bq76920/30/40 family, a 3-series to 15-series Cell
Analog Front End Monitoring, and a host
microcontroller or dedicated state-of-charge (SOC)
tracking gas gauge device.
Device Information(1)
•
•
•
•
PACKAGE
BODY SIZE (NOM)
bq76200
TSSOP (16)
5.00 × 4.40 × 1.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
PART NUMBER
eBikes, eScooters, and eMotorcycles
Energy storage systems and uninterruptible power
supplies (UPS)
Portable medical systems
Wireless base-station battery systems
Lead acid (PbA) replacement batteries
12-V to 48-V battery packs
Simplified Schematic
1M
PACK+
10 M
10 M
100
470 nF
0.01 µF
bq76200
VDDCP
BAT
NC
CHG_EN
CP_EN
From AFE
or
MCU
DSG_EN
CHG
100
NC
PCHG
NC
DSG
PACK
PMON_EN
PACKDIV
PCHG_EN
VSS
0.01 µF
Ra
To ADC
Rb
PACK>
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq76200
SLUSC16B – NOVEMBER 2015 – REVISED MARCH 2019
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Typical Characteristics .............................................
Detailed Description .............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 11
8
Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Applications ................................................ 17
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 Device and Documentation Support ................. 21
11.1
11.2
11.3
11.4
11.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
21
21
21
21
21
12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
Changes from Revision A (September 2018) to Revision B
•
Added application note references to Related Documentation, as well as to sections throughout the data sheet ............. 21
Changes from Original (November 2015) to Revision A
•
2
Page
Page
Changed the predischarge FET symbol in Figure 10........................................................................................................... 14
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SLUSC16B – NOVEMBER 2015 – REVISED MARCH 2019
5 Pin Configuration and Functions
PW Package
16-pin TSSOP
Top View
VDDCP
1
16 CHG
BAT
2
15 NC
NC
3
14
CHG_EN
4
13 NC
CP_EN
5
12 DSG
DSG_EN
6
11
PACK
PMON_EN
7
10
PACKDIV
PCHG_EN
8
9
VSS
PCHG
Pin Functions
PIN
NAME
DESCRIPTION
I/O
BAT
2
P
Top of battery stack
CHG (2)
16
O
Gate drive for charge FET
CHG_EN
(3)
4
I
Charge FET enable
CP_EN (3)
5
I
Charge pump enable (internally logic OR'ed with CHG_EN and DSG_EN
signals)
DSG (2)
12
O
Gate drive for discharge FET
DSG_EN (3)
6
I
Discharge FET enable
NC
3, 13, 15
—
No connect. Leave the pin floating
PACK
11
P
Analog input from PACK+ terminal
PACKDIV (2)
10
O
PACK voltage after internal switch (Connect to MCU ADC via resistor
divider.)
PCHG (2)
14
O
Gate drive for precharge FET
(3)
8
I
Precharge FET enable
PMON_EN (3)
7
I
Pack monitor enable (allows connection of internal switch between PACK
and PACKDIV)
VDDCP
1
O
Charge pump output. Connect a capacitor to BAT pin. Do not load this pin.
VSS
9
P
Ground reference
PCHG_EN
(1)
(2)
(3)
TYPE
NO.
(1)
P = Power Connection, O = Digital Output, AI = Analog Input, I = Digital Input, I/OD = Digital Input/Output
Leave the pin float if the function is not used.
It is recommended to connect the pin to ground if the function is not used.
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
Input voltage range, VIN
BAT, PACK (both under charge pump disabled condition)
CHG_EN, DSG_EN, PCHG_EN, PMON_EN, CP_EN
(2)
MIN
MAX
UNIT
–0.3
100
V
V
–0.3
15
Output voltage range, VO
CHG, DSG, PCHG, PACKDIV, VDDCP
–0.3
100
V
TFUNC
Functional Temperature
–40
110
°C
–65
150
°C
Storage temperature, Tstg
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The enable inputs need to be current limited with the max current not exceeding 5 mA.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS001 (1)
±2000
Charged-device model (CDM), per JEDEC specification
JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Typical values stated where TA = 25°C and VBAT = 48.8 V, Min/Max values stated where TA = –40°C to 85°C and BAT = 8 V
to 75 V (unless otherwise noted)
MIN
NOM
MAX
UNIT
VBAT
Battery cell input supply voltage range
8
75
V
VPACK
Charger/Load voltage range
0
75
V
VIN
Input voltage range CHG_EN, DSG_EN, PCHG_EN, PMON_EN, CP_EN
0
14
V
CVDDCP
Capacitor Between VDDCP and BAT
TOPR
Operating free-range temperature
470
–40
nF
85
°C
6.4 Thermal Information
THERMAL METRIC (1)
TSSOP (PW)
16 PINS
UNIT
RθJA, High K
Junction-to-ambient thermal resistance
106.8
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
41.5
°C/W
RθJB
Junction-to-board thermal resistance
51.8
°C/W
ψJT
Junction-to-top characterization parameter
3.8
°C/W
ψJB
Junction-to-board characterization parameter
51.3
°C/W
RθJC(bot)
Junction-to-case(bottom) thermal resistance
n/a
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
Typical values stated at TA = 25°C and V(BAT) = 48 V. MIN/MAX values stated with TA = –40°C to 85°C and V(BAT) = 8 to 75 V
unless otherwise noted.
PARAMETER
DESCRIPTION
TEST CONDITION
MIN
TYP
MAX
UNIT
C(VDDCP) = 470 nF, V(BAT) = 8V
CL = 10 nF
40
60
µA
C(VDDCP) = 470 nF, V(BAT) ≥ 48V
CL = 10 nF
40
52
uA
6
9.5
µA
14
V
SUPPLY AND LEAKAGE CURRENT
I(BAT)
NORMAL mode current (1)
Sum of current into BAT and
PACK pin
Shutdown Mode, PACK = 0 V, BAT = 8 V
V(VDDCP)
Charge pump voltage
No Load, CP_EN = hi, V(VDDCP) – V(BAT)
tCPON
Charge pump start up time from C(VDDCP) = 470 nF, 10% to 90% of
zero volt
V(VDDCP)
Ishut
CHARGE PUMP
9
100
ms
INPUT ENABLE CONTROL SIGNALS
VIL
Digital low input level for
CHG_EN, DSG_EN,
PCHG_EN, CP_EN, PMON_EN
VIH
Digital high input level for
CHG_EN, DSG_EN,
PCHG_EN, CP_EN, PMON_EN
RPD
Internal Pull down
0.6
1.2
VIN = 5 V
V
V
0.6
1
4
MΩ
9
12
14
V
CHARGE FET DRIVER
V(CHGFETON)
CHG gate drive voltage (on)
CL = 10 nF, CHG_EN = Hi, V(BAT) =
V(PACK), V(CHG) – V(BAT)
R(CHGFETON)
CHG FET driver on resistance
V(VDDCP) – V(BAT) = 12 V, CHG_EN = Hi,
V(BAT) = V(PACK)
1.1
kΩ
R(CHGFETOFF)
CHG FET driver off resistance
V(VDDCP) – V(BAT) = 12 V, CHG_EN = Lo,
V(BAT) = V(PACK)
0.3
kΩ
DISCHARGE FET DRIVER
V(DSGFETON)
DSG gate drive voltage (on)
CL = 10 nF, DSG_EN = Hi, V(BAT) =
V(PACK), V(DSG) – V(PACK)
R(DSGFETON)
DSG FET driver on resistance
V(VDDCP) – V(BAT) = 12 V, DSG_EN = Hi,
V(BAT) = V(PACK)
3.5
kΩ
R(DSGFETOFF)
DSG FET driver off resistance
V(VDDCP) – V(BAT) = 12 V, DSG_EN = Lo,
V(BAT) = V(PACK)
1
kΩ
9
12
14
V
PRECHARGE FET DRIVER
V(PCHGFETON)
PCHG gate drive voltage (on)
V(PACK) > 17 V, V(BAT) < V(PACK), V(PACK) –
V(PCHG)
5
12
14
V
1.5
2.5
3.5
kΩ
PACK MONITOR (PACK_DIV)
R(PMONFET)
(1)
On resistance of internal FET
(R between PACK and
PACKDIV)
PMON_EN = hi
NORMAL mode is defined as CHG_EN = Hi, DSG_EN = Hi, CP_EN = Hi, PCHG_EN = Lo, PMON_EN = Lo. Current value is averaged
out over time.
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6.6 Timing Requirements
Parameter
Description
TEST CONDITION
MIN
tCHGFETON
CL = 10 nF, (20% of CHG_EN from Lo
CHG on rise time + propagation
to Hi) to (80% of V(CHGFETON)), CP_EN =
delay
Hi, (CP is already on)
tCHGFETOFF
CHG off fall time + propagation
delay
tPROP
CHG EN to CHG output
_CHG
TYP
MAX
UNIT
27
45
µs
CL= 10 nF, (80% of CHG_EN from Hi to
Lo) to (20% of V(CHGFETON)) , CHG_EN
= Hi to Lo
7
20
µs
CL= 10 nF, CP_EN = Hi, (CP is already
on), see timing diagram
0.5
µs
tDSGFETON
CL = 10 nF, (20% of DSG_EN from Lo
DSG on rise time + propagation
to Hi) to (80% of V(DSGFETON)), CP_EN =
delay
Hi, (CP is already on)
tDSGFETOFF
DSG off fall time + propagation
delay
CL = 10 nF, (80% of DSG_EN from Hi to
Lo) to (20% of V(DSGFETON))
tPROP_DSG
DSG EN to DSG output
propagation delay
CL= 10 nF, CP_EN = Hi, (CP already
on), see timing Diagram
0.5
tPCHGOFF
PCHG turn off time +
propagation delay
CL = 1 nF, (20% of PCHG_EN from Hi
to Lo) to (80% of VPCHGFETON)
30
60
µs
tPCHGON
PCHG turn on time +
propagation delay
CL = 1 nF, (80% of PCHG_EN from Lo
to Hi) to (20% of V(PCHGFETON))
34
55
µs
tPROP_PCHG
PCH_EN to PCHG propagation
delay
CL = 1 nF
0.5
µs
tPROP_PMON
PMON_EN and PACKDIV =
PACK propagation delay
0.5
µs
24
50
µs
7
20
µs
µs
80%
CHG_EN/
DSG_EN/
20%
80%
CHG/
DSG/
20%
Tprop
Tprop
TFETON
TFETOFF
Figure 1. Timing Characteristics - ( CP assumed to be already On)
6
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6.7 Typical Characteristics
36
7
Min
Average
Max
Min
Average
Max
6.5
Shutdown Current (PA
Normal Mode Current (PA)
34
32
30
28
26
6
5.5
5
24
22
-50
-25
0
25
50
Temperature (qC)
75
100
4.5
-50
125
Figure 2. Normal Mode Current Vs Battery
0
25
50
Temperature (qC)
75
100
D002
Figure 3. Shutdown Mode Current vs Battery
1.75
11.5
40qC
25qC
105qC
Min
Average
Max
11.25
FET On Voltage (V)
1.5
Internal Rpd (M:)
-25
D001
1.25
1
11
10.75
10.5
10.25
10
0.75
9.75
0.5
0
2
4
6
8
10
Input Voltage (V)
12
14
16
9.5
-50
-25
0
D003
Figure 4. Input Pin Voltage for Internal Pull-Down
Resistance (Rpd)
25
50
Temperature (qC)
75
100
D004
D001
Figure 5. CHG/DSG FET On Voltage vs Temperature
16
VPCG On (V)
14
Min
Average
Max
12
10
8
6
-50
-25
0
25
50
Temperature (qC)
75
100
D005
Figure 6. PCHG On Voltage vs Temperature
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7 Detailed Description
7.1 Overview
The bq76200 device is a low-power, high-side, N-Channel MOSFET driver for battery-pack protection systems,
allowing a low-side battery-protection system to be implemented into a high-side protection system.
High-side charge/discharge FETs offer a huge advantage versus their low-side counterparts; with high-side
implementation, a system-side processor can always communicate with the monitor or micro-controller (MCU)
within the battery pack, regardless of whether the FETs are on or off — this is not easily supported in a low-side
switching architecture due to the lack of a shared ground reference. One key benefit of an ever-present
communication link is the ability to read out critical pack parameters despite safety faults, thereby enabling the
system to assess pack conditions before determining if normal operation may resume.
The device allows independent control on charging and discharge via the digital enable pins. The device has
integrated charge pump which is enabled by the CP_EN pin. The enable inputs, CHG_EN, DSG_EN, and
PCHG_EN control the CHG, DSG, and PCHG FET gate drivers, respectively. The enable inputs can be
connected to low-side FET driver outputs of an Analog Front End (AFE) such as Texas Instruments bq769x0
series, a general purpose microcontroller, or dedicated battery pack controller such as the bq783xx series.
In normal mode, the AFE or MCU enables the CHG_EN and DSG_EN, turning on the CHG and DSG FET
drivers to connect the battery power to the PACK+ terminal. When a fault is detected by the AFE or the
microcontroller, it can disable the CHG_EN and/or DSG_EN to open the charge or discharge path for protection.
Note that when either the CHG_EN or DSG_EN is enabled, the charge pump will be automatically enabled even
if the CP_EN is in the disable state. It is recommended to enable the charge pump via CP_EN pin during system
start-up to avoid adding the tCPON time into the FET switching time during normal operation.
A lower charging current is usually applied to a deeply depleted battery pack. The bq76200 PCHG_EN input
provides an option to implement a P-Channel MOSFET precharge path (current-limited path) in the battery pack.
An AFE usually provides individual cell voltages and/or battery stack voltage measurements, but it is not
necessary to have PACK+ voltage measurement. The bq76200 PMON_EN pin, when enabled, will connect the
PACK+ voltage onto the PACKDIV pin, which is connected to an external resistor divider to scale down the
PACK+ voltage. This scaled down PACK+ voltage can be connected to a microcontroller's ADC input for voltage
measurement. The system can use this information for charger detection or to implement advanced charging
control.
For safety purposes, all the enable inputs are internally pulled down. If the AFE or microcontroller is turned off, or
if the PCB trace is damaged, the internal pull down of the enable inputs will keep CHG, DSG, PCHG in an off
state and the PACK+ voltage does not switch onto the PACKDIV pin.
8
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7.2 Functional Block Diagram
BAT
PACK
PACKDIV
Vcommon
Reference
UVLO
PMON_EN
CHG_EN
CHG
Charge
Pump
CP_EN
VDDCP
I/O
DSG
DSG_EN
Vcommon
PCHG
PCHG_EN
VSS
Figure 7. Functional Block Diagram
7.3 Feature Description
7.3.1 Charge Pump Control
The bq76200 device has an integrated charge pump. A minimum of 470-nF capacitor is required on the V(VDDCP)
pin to the BAT pin to ensure proper function of the charge pump. If the V(VDDCP) capacitor is disconnected, a
residual voltage could reside at the CHG and/or DSG output if CHG_EN and/or DSG_EN are enabled. Such a
fault condition can put the external FETs in high Rdson state and result in FET damage.
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Feature Description (continued)
The V(VDDCP) capacitor can be scaled up to support more FETs in parallel (such as high-total FET-gate
capacitance) than the value specified in the electrical characteristics table. A higher VDDCP capacitance results
in longer tCPON time. See the Application Information section for more information. Note that probing the VDDCP
pin may increase the loading on the charge pump and result in lower measurement value than the V(VDDCP)
specification. Using higher impedance probe can reduce such effect on the measurement.
The charge pump is controlled by CP_EN and also OR'ed with the CHG_EN and DSG_EN inputs. This means
by enabling CHG_EN or DSG_EN alone, the charge pump will automatically turn on even if the CP_EN pin is
disabled. The PCHG_EN controls the PCHG pin, which is a P-channel FET driver and does not require the
function of the charge pump. The charge pump is turned off by default. When CP_EN is high, the charge pump
turns on regardless of the status of the CHG_EN and DSG_EN inputs.
When CP_EN is enabled, the charge pump voltage starts to ramp up. Once the voltage is above an internal
UVLO level, about 9-V typical above VBAT, the charge pump is considered on. The charge pump voltage should
continuously ramp to the V(VDDCP) level. If the CHG_EN and/or DSG_EN is enabled, the CHG and/or DSG
voltage will starts to turn on after the charge pump voltage is above the UVLO level, and ramp up along the
charge pump voltage to the V(VDDCP) level. Otherwise, the CHG and DSG do not turn on if the charge pump
voltage fails to ramp up above UVLO. For example, if the C(VDDCP) is not scaled properly to support the number
of FETs in parallel, the heavy loading would prevent the charge pump to ramp up above UVLO. CHG and DSG
would not be turned on in this case.
When CHG_EN and/or DSG_EN is enabled after the charge pump is fully turned on, the CHG_EN-enable to
CHG-on delay (or DSG_EN-enable to DSG-on delay) is simply the sum of (tprop + FET rise time). A system
configuration example for this scenario will be connecting the CP_EN to the host MCU, enable CP_EN at system
start-up and keep the CP_EN enabled during normal operation. This is the recommended configuration, because
the charge pump ramp-up time, tCPON, becomes part of the system start-up time and does not add onto the FET
switch delay during normal operation.
If CP_EN is not used (it is highly recommended to connect the CP_EN to ground), the charge pump on- and offstate is controlled by CHG_EN or DSG_EN. The CHG or DSG output will only be on after the charge-pump
voltage is ramped up above UVLO. This means the CHG_EN-enable to CHG-on delay (or DSG_EN-enable to
DSG-on delay) will be (tCPON + tprop + FET rise time).
The charge pump is turned off when CP_EN AND CHG_EN AND DSG_EN signals are all low. The charge pump
is not actively driven low and the voltage on the V(VDDCP) capacitor bleeds off passively. If any of the CP_EN,
CHG_EN, or DSG_EN signals is switched high again while the V(VDDCP) capacitor is still bleeding off its charge,
the charge pump start up time, tCPON, will be shorter.
7.3.2 Pin Enable Controls
The bq76200 has four digital enable inputs that control the state of associated output signals as defined in the
following table. The VIH and VIL levels of these enable pins are low enough to work with most MCUs. At the
same times, the pins have high enough tolerant to allow direct control from an AFE FET driver. This gives
system maker a flexible option to architect the battery pack configuration.
10
INPUT PIN
ASSOCIATED OUTPUT PIN
DESCRIPTION
CHG_EN
CHG
Charge FET control
DSG_EN
DSG
Discharge FET control
PCHG_EN
PCHG
Precharge FET control
PMON_EN
PACKDIV
Pack monitor control
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7.3.2.1 External Control of CHG and DSG Output Drivers
The CHG_EN and DSG_EN pins provide direct control of the CHG and DSG FET driver. Table 1 summarizes
the CHG and DSG statute with respect to the CP_EN, CHG_EN and DSG_EN inputs.
Table 1. CHG and DSG with Respect to CP_EN, CHG_EN, and DSG_EN
CP_EN
CHG_EN
DSG_EN
CHARGE PUMP
CHG
DSG
Lo (default)
Lo (default)
Lo (default)
OFF (default)
OFF (default)
OFF (default)
Lo
Lo
Hi
ON
OFF
ON
Lo
Hi
Lo
ON
ON
OFF
Lo
Hi
Hi
ON
ON
ON
Hi
Lo
Lo
ON
OFF
OFF
Hi
Lo
Hi
ON
OFF
ON
Hi
Hi
Lo
ON
ON
OFF
Hi
Hi
Hi
ON
ON
ON
7.3.2.2 External Control of PCHG Output Driver
The PCHG output driver is designed to drive a P-channel FET and is controlled by the PCHG_EN pin. The
PCHG driver provides an option to implement a separate charging path with a P-channel FET to charge the
battery when the cells are deeply depleted. A resistor should be added in series to the P-channel precharge FET
to limit the charging current. A precharge current is usually at or less than 1/20 of the normal charge current if the
charger does not support lower current precharge. Refer to the battery cell specification from the cell
manufacturer charging for the appropriate current limit.
PCHG_EN
PCHG
Lo (default)
OFF (default)
Hi
ON
7.3.2.3 Pack Monitor Enable
The bq76200 device provides an internal-switch control to post the PACK+ voltage on to the PACKDIV pin. A
resistor divider can be connected to the PACKDIV pin externally to divide down the PACK+ voltage into a
measurable range of an MCU. The PMON_EN controls the internal switch between PACK pin and PACKDIV pin.
The internal switch has an on resistance of R(PMONFET). The external resistor divider for PACKDIV pin should be
selected to avoid exceeding the absolute maximum of the PACKDIV pin and should also keep the loading current
< 500 µA. If this function is not used, the PACKDIV pin should leave floating. To reduce power consumption, the
PMON_EN should be enabled only when PACK+ voltage measurement is needed.
PMON_EN
PACKDIV
Lo (default)
DISABLED (default)
Hi
ENABLED
7.4 Device Functional Modes
•
•
In NORMAL mode, the bq76200 charge pump is turned on by enabling either CP_EN, CHG_EN, or DSG_EN.
In this mode, typically the CHG and DSG outputs are driven to V(BAT) + V(VDDCP).
In SHUTDOWN mode, the bq76200 is completely powered down. When CHG_EN, DSG_EN, and CP_EN are
driven low, the device enters SHUTDOWN mode, and the outputs are driven low.
DEVICE MODES
CONDITION
NORMAL
CHG_EN = Hi, DSG_EN = Hi, CP_EN = Hi, PCHG_EN = don't care, PMON_EN = don't care
SHUTDOWN
CHG_EN = Lo, DSG_EN = Lo, CP_EN = Lo, PCHG_EN = Lo, PMON_EN = Lo
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The bq76200 device is a high-side NMOS FET driver with integrated charge pump. The device can convert a
low-side battery protection system into a high-side protection system, allowing the battery monitor device or
battery MCU to always maintain communication to the host system regardless if the protection FETs are on or
off. The device provides independent enables to control charge and discharge of a battery pack.
The following section highlights several recommended implementations when using this device. See the FET
Configurations for the bq76200 High-Side N-Channel FET Driver Application Note (SLVA729).
8.1.1 Recommended System Implementation
8.1.1.1 bq76200 Slave Device
The bq76200 is a FET driver. It controls the output pins (CHG, DSG, PCHG, and PACKDIV) according to the
input pin (CHG_EN, DSG_EN, PCHG_EN, CP_EN, and PMON_EN) status. The device does not validate if the
inputs should or should not be turned on or off. For example, if both CHG_EN and PCHG_EN are enabled,
bq76200 will turn on both CHG and PCHG simultaneously, enabling two charging paths to the system. The
system designer should avoid undesirable enable combinations via the schematic, AFE, or host MCU
implementation.
8.1.1.2 Flexible Control via AFE or via MCU
The bq76200 device has simple-logic input pins (CHG_EN, DSG_EN, PCHG_EN, CP_EN, and PMON_EN) that
can accept a control signal from any MCU I/O. At the same time, the input pins are designed to tolerate high
voltage signal such as the FET driver output from an AFE. This flexibility allows a mix of control input driving
from AFE and/or MCU to optimize the system design.
For example, it is recommended to control the CP_EN pin via MCU which the system can turn on the charge
pump at system start-up, excluding the extra FET delay due to charge pump voltage ramping. On the other hand,
the CHG_EN and DSG_EN can be driven by the AFE FET driver output, especially if the AFE has hardware
protection features (such as the bq76920/30/40 family), to optimize the FET reaction time.
All the input pins have internal pull-down resistor. The outputs are default to be off if any of the input pins are at
high-Z state.
8.1.1.3 Scalable VDDCP Capacitor to Support Multiple FETs in Parallel
The bq76200 requires a minimum 470-nF capacitor to be connected between the VDDCP pin and BAT pin in
order to turn on the integrated charge pump. The Electrical Characteristics Specification of this document
specified the device performance based on 10 nF loading with 470-nF VDDCP capacitor. The loading
capacitance varies with FET choices, number of FETs in use, and in parallel and simultaneous switching versus
sequential switching of CHG and DSG FET.
The more FETs that are in parallel, the higher the loading capacitance. Similarly, simultaneously switching of the
CHG and DSG FET loads down the charge pump more than sequentially switching both FETs. Eventually, the
loading capacitance can exceed the supported range of a 470-nF VDDCP capacitor. A > 470-nF VDDCP
capacitor can be used to support higher-loading capacitance.
12
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Application Information (continued)
PACK+
100
CVDDCP
0.01 µF
bq76200
VDDCP
CHG
NC
BAT
NC
PCHG
CHG_EN
CP_EN
DSG_EN
NC
DSG
PACK
PMON_EN
PACKDIV
PCHG_EN
VSS
PACKFigure 8. Scale CVDDCP to Support Multiple FETs in Parallel (Partial Schematic Shown)
Based on test results, 470-nF VDDCP capacitor can support up to approximately 30-nF loading capacitance.
Using a 470-nF/20-nF ratio (to include some design margin), a 2.1-µF VCCDP capacitor can support up to ~90nF loading capacitance. Note that a larger VDDCP capacitor increases the charge pump start up time; a higher
loading capacitance increases the FET on and off time. System designers should test across the operation range
to ensure the design margin and system performance. Refer to the FET Configurations for the bq76200 HighSide N-Channel FET Driver Application Note (SLVA729) for more test results.
Also notice that any damage or disconnection of the VDDCP capacitor during operation can leave a residual
voltage on the FET driver output if the inputs are enabled. This can result in putting the external FETs in a highRdson state and cause FET damage.
8.1.1.4 Precharge and Predischarge Support
For a deeply depleted battery pack, a much lower charging current, for example, a C/10 rate, is usually used to
precharge the battery cells. This allows the passivating layer of the cell to be recovered slowly (the passivating
layer might be dissolved in the deep discharge state).
The bq76200 has a PCHG output to drive an external P-channel FET to support battery precharge. In this
scenario, the external P-channel FET is placed in parallel with the CHG FET and a power resistor can be
connected in series of the P-channel FET to limit the charging current during the precharge state. The MCU can
be used to control the PCHG_EN pin to determine the entry and exit of the precharge mode.
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Application Information (continued)
Rpchg
PACK+
100
470 nF
0.01 µF
bq76200
VDDCP
NC
BAT
NC
PCHG
CHG_EN
CP_EN
DSG_EN
From MCU
CHG
NC
DSG
PACK
PMON_EN
PACKDIV
PCHG_EN
VSS
PACKFigure 9. P-Channel FET in Parallel with CHG FET for Precharging (Partial Schematic Shown)
Alternatively, the CHG pin can also be used to precharge a battery pack given if the charging current is
controlled by the system (that is, does not require external component to limit the charging current such as a
smart charger) and the battery stack voltage is higher than minimum operation voltage of the bq76200 (that is,
the charge pump can start to turn on the CHG FET). PCHG should leave floating if it is not used in the
application.
The PCHG output can be used to predischarge a high-capacitive system. For example, a load removal can be
one of the recovery requirements after a discharge related fault has been detected. In a high-capacitive system,
the residual voltage at the system side can take a significant time to bleed off. This results in an additional delay
in fault recovery. The PCHG output can be used to control an external P-channel FET placed in parallel with the
DSG FET to predischarge the residual voltage in order to speed up the fault recovery process.
14
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Application Information (continued)
Rpdsg
PACK+
10 M
10 M
bq76200
100
470 nF
CHG
VDDCP
NC
BAT
0.01 µF
NC
PCHG
NC
CHG_EN
DSG
CP_EN
PACK
DSG_EN
PMON_EN
From MCU
PCHG_EN
PACKDIV
VSS
PACKFigure 10. P-Channel FET in Parallel with DSG FET for Predischarging (Partial Schematic Shown)
8.1.1.5 Optional External Gate Resistor
The CHG and DSG have certain internal on and off resistance. However, an optional external gate resistor can
be added to CHG and/or DSG FET to slow down the FET on and off timing.
8.1.1.6 Separate Charge and Discharge paths
In some systems, the charging current might be significantly lower than the discharge current. In such systems,
the system designer may prefer to implement a separate charge and discharge paths in which the number of
FET in parallel for charge and discharge can be different to reduce to BOM cost.
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Application Information (continued)
Charge
Discharge
100
470 nF
0.01 µF
bq76200
VDDCP
CHG
NC
BAT
NC
PCHG
CHG_EN
CP_EN
DSG_EN
NC
DSG
PACK
PMON_EN
PACKDIV
PCHG_EN
VSS
PACKFigure 11. Separate Charge and Discharge Paths (Partial Schematic Shown)
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8.2 Typical Applications
1M
Rpchg
10 M
Rgs
Rc
Cc
Rc
10 M
Rgs
Cc
Rc
PACK+
10 M
Rgs
Cc
Rc
Cc
Rc
Cc
VC10x
Cc
Rc
B
Analog Front End
Rf
Cc
Rc
Cc
Rc
100
Rfilter
VC15
VC14
BAT
VC13
CAP3
VC12
TS3
10k
1 µF
0.01 µF
Cfilter
Rf
VC10b
Rc
Cc
Rc
Cc
VC10
VC10x
VC9
CAP2
VC8
TS2
VC5b
A
Cc
Rc
Cc
Rc
Cc
Rc
Cc
Rc
Rc
NC
CHG_EN
DSG
DSG_EN
A
Cf
10k
PACK
PCHG_EN
Rf
VSS
1 µF
Ra
VC5x
VC5
REGSRC
VC4
REGOUT
VC3
CAP1
VC2
TS1
VC1
SCL
VC0
SDA
SRP
VSS
SRN
CHG
ALERT
DSG
10 NŸ
1 µF
Cf
4.7 µF
1 µF
10 k
Cc
GPIO
GPIO
VCC
GPIO
SCL
SDA
Cc
µC
GPIO
0.1 µF
0.1 µF
100
0.01 µF
Cfilter
PMON_EN PACKDIV
PUSH-BUTTON FOR BOOT
0.1 µF
100
Rfilter
PCHG
NC
VC6
Cc
Rc
NC
CP_EN
VC7 bq76940
VC5x
Rc
bq76200
CHG
VDDCP
BAT
Cf
VC11
Cc
470 nF
CVDDCP
B
Rc
ADC_IN
Rb
VSS
100
Rsns
PACK-
8.2.1 Design Requirements
For this design example, use the parameters listed in Table 2.
Table 2. Design Parameters
PARAMETER
EXTERNAL COMPONENT
NOTE
BAT and PACK Filters
Rfilter and Cfilter
VDDCP capacitor
CVDDCP
A minimum of 470 µF is required. A higher value can be used to
support higher-loading capacitance. See the Recommended
Implementation and the FET Configurations for the bq76200 HighSide N-Channel FET Driver Application Note (SLVA729).
PACKDIV resistor divider
Ra and Rb
Based on the max PACK voltage of the application, calculate the
total value of (Ra + Rb) that can keep the PACKDIV current below
500 µA.
CHG, DSG, PCHG gate-source
resistor
Rgs
Recommended to use 100 Ω and 0.01 µF
Recommended to use 10 MΩ. A different Rgs value may change the
loading level of the charge pump. System designer should perform
thorough system testing if a different Rgs is used.
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8.2.2 Detailed Design Procedure
1. Determine if CP_EN pin will be driven by MCU. It is highly recommended to use CP_EN to turn on the
charge pump at system start-up. However, it is not a must to operate the bq76200 to switch on CHG and
DSG pins. System designer should ensure the FET's turn on time is acceptable during normal operation if
CP_EN is not enabled at system startup.
2. Select the correct VDDCP capacitance. Scaling up the VDDCP capacitance allows support for a higher
number of FETs in parallel. This test result of various parallel FETs versus VDDCP capacitance in the
bq76200 application is for general reference only. System designer should always validate their design
tolerant across operation temperature range.
3. If the PMON_EN is used, the PACKDIV resistor divider, Ra and Rb, must be selected to satisfy (Ra+Rb) <
500 µA, AND [Rb/(Ra + Rb)] < (max ADC input range)/(max PACK+ voltage). For example, In a 48V system,
if the max charger voltage is 50.4 V and a MCU's max ADC input is 3 V. To meet both (Ra + Rb) < 500 µA,
AND [Rb/(Ra + Rb)] < (3 V/50.4 V) requirements, the Ra value might be 100 kΩ or less and Rb value might
be 6 KΩ or less.
4. Follow the application schematic (see Typical Applications) to connect the device.
8.2.3 Application Curves
CHG output reacts to the CHG_EN signal immediately. Similar
behavior applies to the DSG pin.
CHG output reacts to the CHG_EN signal after charge pump
startup delay. Similar behavior applies to the DSG pin.
Figure 12. CHG_EN Switched On After Charger Pump
Turns On and Is Stable
Figure 13. CHG_EN Enabled Before Charge Pump is
Turned On
With 10-nF loading and no Rgs on DSG output. Note the time scale was 800 ns/div; thus, the DSG waveform above is
basically the DSG FET fall time.
Figure 14. DSG_EN to DSG Output Propagation Delay
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9 Power Supply Recommendations
The maximum recommended operation voltage on the BAT and PACK pins is 75 V. The charge pump, when it
turns on, will add 14 V maximum voltage on top of the BAT or PACK voltage to the device, pushing the total
device voltage to approximately 89 V.
The bq76200 has high voltage (100 V) tolerant pins, but system designer should take into account the worsecase transient voltage and the maximum charge pump on voltage to determine the maximum voltage applying to
BAT and PACK pins.
10 Layout
10.1 Layout Guidelines
For the following procedure, see Figure 15 and Figure 16.
1. Place CVDDCP capacitor close to the device.
2. Place BAT and PACK RC filters close to the device.
3. Generally, a typical system using an AFE, MCU, and bq76200 usually have a high-current ground
trace/plane and low-current ground plane in the PCB layout. If so, the bq76200 ground should be connected
to the low-current ground plane of the PCB layout to remove noise affecting the ENABLE signals.
10.2 Layout Example
PACK+
bq76200
100
CVDDCP
0.01 µF
CHG
VDDCP
NC
BAT
NC
PCHG
CHG_EN
NC
100
DSG
CP_EN
DSG_EN
PACK
PMON_EN
PACKDIV
PCHG_EN
VSS
0.01 µF
PACK-
Place these components close to the device pins
Figure 15. Place CVDDCP and Filter Components Close to Device
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Layout Example (continued)
Power Trace Line
PACK+
Low power
ground plane
bq76200
Battery
cell
stack
AFE
comm
bq76200 ground should connect to
the low power ground plane of the
PCB layout
MCU
Rsense
PACK-
Low power ground and high power
ground connect here
Figure 16. Connect bq76200 to Low Power Ground Plane on PCB Layout
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• bq76200 Reverse Voltage Considerations Application Note (SLUA796).
• FET Configurations for the bq76200 High-Side N-Channel FET Driver Application Note (SLVA729)
• Minimizing Shutdown Current of the bq76200 Application Note (SLUA795)
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
BQ76200PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ7620B
BQ76200PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ7620B
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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