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BQ78350DBT-R1A

BQ78350DBT-R1A

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TFSOP30

  • 描述:

    IC BATT MON LI-ION 3-15C 30TSSOP

  • 数据手册
  • 价格&库存
BQ78350DBT-R1A 数据手册
Order Now Product Folder Support & Community Tools & Software Technical Documents BQ78350-R1A SLUSE05 – DECEMBER 2019 BQ78350-R1A CEDV Li-Ion Gas Gauge and Battery Management Controller Companion to the BQ769x0 Battery Monitoring AFE 1 Features 2 Applications • • 1 • • • • • • • • • • • • Compensated end-of-discharge voltage (CEDV) gauging algorithm Supports SMBus host communication Flexible configuration for 3- to 5-series (BQ76920), 6- to 10-series (BQ76930), and 9- to 15-series (BQ76940) li-ion and LiFePO4 batteries Supports battery configurations up to 320 Ahr Supports charge and discharge current reporting up to 320 A On-chip temperature sensor option External NTC thermistor support from companion AFE Full array of programmable protection features – Voltage, current, and temperature – System components Lifetime data logging Supports CC-CV charging, including precharge, charge inhibit, and charge suspend Offers an optional resistor programmable SMBus slave address for up to eight different bus addresses Drives up to a 5-segment LED or LCD display for state-of-charge indication Provides SHA-1 authentication • • • • • Light electric vehicles (levs): ebikes, escooters, pedelec, and pedal-assist bicycles Power and gardening tools Battery backup and uninterruptible power supply (UPS) systems Wireless base station backup systems Telecom power systems Handheld vacuum cleaners and robot vacuums 3 Description The Texas Instruments BQ78350-R1A li-ion and LiFePO4 Battery Management Controller and companion to the BQ769x0 family of analog front end (AFE) protection devices provides a comprehensive set of Battery Management System (BMS) subsystems, helping to accelerate product development for faster time-to-market. The BQ78350-R1A controller and the BQ769x0 AFE support 3-series to 15-series cell applications. The BQ78350-R1A device provides an accurate fuel gauge and state-of-health (SoH) monitor, as well as cell balancing and a full range of voltage-, current-, and temperature-based protection features. Device Information(1) PART NUMBER BQ78350-R1A PACKAGE TSSOP (30) BODY SIZE (NOM) 7.80 mm x 6.40 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic PACK+ bq76920 BAT VC5 REGSRC VC4 REGOUT VC3 CAP 1 VC2 TS 1 VC1 SCL VC0 SDA SRP VSS SRN CHG ALERT DSG VCC MRST BAT VAUX KEYIN PUSH-BUTTON FOR BOOT LED1 LED2 LED3 LED4 PRES RBI LED5 SAFE VSS PWRM DISP SCL SDA ALERT COM VEN SMBC SMBC PRECHG SMBD GPIOA SMBA SMBD GPIOB ADREN PACK– Copyright © 2017, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Description (continued)......................................... Pin Configuration and Functions ......................... Specifications......................................................... 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 1 1 1 2 3 3 4 8 Detailed Description .............................................. 9 8.1 8.2 8.3 8.4 8.5 9 Overview ................................................................... 9 Functional Block Diagram ....................................... 10 Feature Description................................................. 10 Device Functional Modes........................................ 12 Programming........................................................... 12 Application and Implementation ........................ 13 9.1 Application Information............................................ 13 9.2 Typical Applications ................................................ 13 Absolute Maximum Ratings ...................................... 4 ESD Ratings.............................................................. 4 Recommended Operating Conditions....................... 4 Thermal Information .................................................. 5 Electrical Characteristics: Supply Current................. 5 Electrical Characteristics: I/O .................................... 5 Electrical Characteristics: ADC ................................. 6 Electrical Characteristics: Power-On Reset .............. 6 Electrical Characteristics: Oscillator.......................... 6 Electrical Characteristics: Data Flash Memory ....... 6 Electrical Characteristics: Register Backup ............ 7 SMBus Timing Specifications ................................. 7 Typical Characteristics ........................................... 8 10 Power Supply Recommendations ..................... 21 11 Layout................................................................... 21 11.1 Layout Guidelines ................................................. 21 11.2 Layout Example .................................................... 22 12 Device and Documentation Support ................. 23 12.1 12.2 12.3 12.4 12.5 Related Documentation......................................... Support Resources ............................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 23 23 23 23 23 13 Mechanical, Packaging, and Orderable Information ........................................................... 23 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. 2 Date Revision Notes December 2019 * Initial Release Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 5 Description (continued) The BQ78350-R1A device offers optional LED or LCD display configurations for capacity reporting. It also makes data available over its SMBus 1.1 interface. Battery history and diagnostic data is also kept within the device in non-volatile memory and is available over the same interface. 6 Pin Configuration and Functions 30-Pin DBT Package Pin Functions PIN NUMBER PIN NAME TYPE 1 COM O (1) 2 ALERT I 3 SDA I/O Data transfer to and from the BQ769x0 AFE. Requires a 10-k pullup to VCC 4 SCL I/O Communication clock to the BQ769x0 AFE. Requires a 10-k pullup to VCC 5 PRECHG O Programmable polarity (default is active low) output to enable an optional precharge FET. This pin requires an external pullup to 2.5 V when configured as active high, and is open drain when configured as active low. 6 VAUX AI Auxiliary voltage input. If this pin is not used, then it should be tied to VSS. 7 BAT AI Translated battery voltage input 8 PRES I Active low input to sense system insertion. This typically requires additional ESD protection. If this pin is not used, then it should be tied to VSS. 9 KEYIN I A low level indicates application key-switch is inactive on position. A high level causes the DSG protection FET to open. If this pin is not used, then it should be tied to VSS. 10 SAFE O Active high output to enforce an additional level of safety protection (for example, fuse blow) 11 SMBD I/OD 12 VEN O 13 SMBC I/OD SMBus clock open-drain bidirectional pin used to clock the data transfer to and from the BQ78350R1A device 14 DISP I Display control for the LEDs. This pin is typically connected to BQ78350-R1A device REGOUT via a 100-KΩ resistor and a push-button switch connect to VSS. Not used with LCD display enabled and can be tied to VSS. 15 PWRM O Power mode state indicator open drain output 16 LED1 O LED1/LCD1 display segment that drives an external LED/LCD, depending on the firmware configuration (1) DESCRIPTION Open-drain output LCD common connection. Leave unconnected if not used. Input from the BQ769x0 AFE SMBus data open-drain bidirectional pin used to transfer an address and data to and from the BQ78350-R1A device Active high voltage translation enable. This open drain signal is used to switch the input voltage divider on/off to reduce the power consumption of the BAT translation divider network. I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 3 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Pin Functions (continued) PIN NUMBER PIN NAME TYPE 17 LED2 O LED2/LCD2 display segment that drives an external LED/LCD, depending on the firmware configuration 18 LED3 O LED3/LCD3 display segment that drives an external LED/LCD, depending on the firmware configuration 19 LED4 O LED4/LCD4 display segment that drives an external LED/LCD, depending on the firmware configuration 20 LED5 O LED5/LCD5 display segment that drives an external LED/LCD, depending on the firmware configuration 21 GPIO A I/O Configurable Input or Output. If not used, tie to VSS. 22 VSS — Negative supply voltage 23 VSS — Negative supply voltage 24 MRST I 25 VSS — Negative supply voltage 26 VCC P Positive supply voltage 27 RBI P RAM backup input. Connect a capacitor to this pin and VSS to protect loss of RAM data in case of short circuit condition. 28 GPIO B I/O Configurable input or output. If not used, tie to VSS. 29 ADREN O Optional digital signal enables address detection measurement to reduce power consumption. 30 SMBA IA Optional SMBus address detection input. If this pin is not used, then it should be tied to VSS. DESCRIPTION Master reset input that forces the device into reset when held low. This pin must be held high for normal operation. 7 Specifications 7.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC relative to VSS Supply voltage range –0.3 2.75 V V(IOD) relative to VSS Open-drain I/O pins –0.3 6 V VI relative to VSS Input voltage range to all other pins –0.3 VCC + 0.3 V Operating free-air temperature range, TA –40 85 °C Storage temperature range, Tstg –65 150 °C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Human Body Model (HBM) ESD stress voltage (1) ±2000 Charged Device Model (CDM) ESD stress voltage (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) VCC Supply voltage SAFE VO Output voltage range NOM MAX 2.4 2.5 2.6 UNIT V VCC SMBC, SMBD, VEN ADREN, GPIO A, GPIO B, SDATA, SCLK, PWRM, LED1...5 (when used as GPO) 4 MIN Submit Documentation Feedback 5.5 V VCC Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 Recommended Operating Conditions (continued) VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) MIN NOM MAX BAT, VAUX, SMBA VIN Input voltage range 1 SMBD, SMBC, ALERT, DISP, PRES, KEYIN 5.5 SDATA, GPIO A, GPIO B, LED1...5 (when used as GPI) TOPR UNIT Operating Temperature V VCC –40 85 °C 7.4 Thermal Information BQ78350-R1A THERMAL METRIC (1) TSSOP (DBT) UNIT 30 PINS RθJA, High K Junction-to-ambient thermal resistance 81.4 RθJC(top) Junction-to-case(top) thermal resistance 16.2 RθJB Junction-to-board thermal resistance 34.1 ψJT Junction-to-top characterization parameter 0.4 ψJB Junction-to-board characterization parameter 33.6 RθJC(bottom) Junction-to-case(bottom) thermal resistance n/a (1) °C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics: Supply Current VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER ICC TEST CONDITIONS Operating mode current I(SLEEP) Low-power storage mode current SLEEP mode I(SHUTDOWN) Low-power SHUTDOWN mode current SHUTDOWN mode (1) (2) MIN TYP MAX UNIT 650 (1) No flash programming 300 μA (2) 0.1 μA 1 μA The actual current consumption of this mode fluctuates during operation over a 1-s period. The value shown is an average using the default data flash configuration. The actual current consumption of this mode fluctuates during operation over a user-configurable period. The value shown is an average using the default data flash configuration. 7.6 Electrical Characteristics: I/O VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX Output voltage low SMBC, SMBD, SDATA, SCLK, SAFE, ADREN, VEN, GPIO A, GPIO B, PWRM IOL = 0.5 mA 0.4 Output voltage low LED1, LED2, LED3, LED4, LED5 IOL = 3 mA 0.4 VOH Output voltage high SMBC, SMBD, SDATA, SCLK, SAFE, ADREN, VEN, GPIO A, GPIO B, PWRM IOH = –1 mA VIL Input voltage low SMBC, SMBD, SDATA, SCLK, ALERT, DISP, SMBA, GPIO A, GPIO B, PRES, KEYIN VOL VIH UNIT VCC – 0.5 V V –0.3 0.8 V Input voltage high SMBC, SMBD, SDATA, SCLK, ALERT, SMBA, GPIO A, GPIO B 2 6 V Input voltage high DISP, PRES, KEYIN 2 CIN Input capacitance ILKG Input leakage current VCC + 0.3 5 1 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A V pF µA 5 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com 7.7 Electrical Characteristics: ADC VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER Input voltage range TEST CONDITIONS BAT, VAUX MIN –0.2 Conversion time 16 Resolution (no missing codes) 16 Effective resolution 13 Integral nonlinearity ±0.03% Offset error (2) Offset error drift (2) TA = 25°C to 85°C Full-scale error (3) Full-scale error drift MAX 1 UNIT V ms bits 14 bits FSR (1) 140 250 µV 2.5 18 µV/°C ±0.1% ±0.7% 50 PPM/°C 8 MΩ Effective input resistance (4) (1) (2) (3) (4) TYP Full-scale reference Post-calibration performance and no I/O changes during conversion with VSS as the ground reference Uncalibrated performance. This gain error can be eliminated with external calibration. The A/D input is a switched-capacitor input. Since the input is switched, the effective input resistance is a measure of the average resistance. 7.8 Electrical Characteristics: Power-On Reset VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) MIN TYP MAX VIT– PARAMETER Negative-going voltage input TEST CONDITIONS 1.7 1.8 1.9 UNIT V VHYS Power-on reset hysteresis 50 125 200 mV MIN TYP MAX UNIT 4.194 MHz –3% 0.25% 3% –2 0.25 2 2.5 5 7.9 Electrical Characteristics: Oscillator VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER f(OSC) TEST CONDITIONS Operating frequency f(EIO) Frequency error (1) (2) t(SXO) Start-up time (3) TA = 20°C to 70°C ms LOW FREQUENCY OSCILLATOR f(LOSC) Operating frequency f(LEIO) Frequency error (2) (4) t(LSXO) Start-up time (5) (1) (2) (3) (4) (5) The The The The The 32.768 TA = 20°C to 70°C –2.5% 0.25% –1.5 0.25 kHz 2.5% 1.5 500 ms frequency error is measured from 4.194 MHz. frequency drift is included and measured from the trimmed frequency at VCC = 2.5 V, TA = 25°C. start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency. frequency error is measured from 32.768 kHz. start-up time is defined as the time it takes for the oscillator output frequency to be ±3%. 7.10 Electrical Characteristics: Data Flash Memory VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER tDR TEST CONDITIONS MAX UNIT 10 Years Flash programming write-cycles See note (1) 20,000 Cycles (1) Word programming time See note I(DDdPROG) Flash-write supply current See note (1) 6 TYP See note (1) t(WORDPROG) (1) MIN Data retention 5 2 ms 10 mA Specified by design. Not production tested Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 7.11 Electrical Characteristics: Register Backup VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER I(RB) RB data-retention input current V(RB) RB data-retention voltage (1) (1) TEST CONDITIONS MIN TYP V(RB) > V(RBMIN), VCC < VIT– V(RB) > V(RBMIN), VCC < VIT–, TA = 0°C to 50°C 40 MAX UNIT 1500 nA 160 1.7 V Specified by design. Not production tested 7.12 SMBus Timing Specifications VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN NOM MAX UNIT 100 kHz fSMB SMBus operating frequency SLAVE mode, SMBC 50% duty cycle fMAS SMBus master clock frequency MASTER mode, no clock low slave extend tBUF Bus free time between start and stop tHD:STA Hold time after (repeated) start tSU:STA Repeated start setup time tSU:STO Stop setup time tHD:DAT Data hold time tSU:DAT Data setup time tTIMEOUT Error signal/detect tLOW Clock low period tHIGH Clock high period See note (2) tLOW:SEXT Cumulative clock low slave extend time See note (3) 25 tLOW:MEXT Cumulative clock low master extend time See note (4) 10 tF Clock/data fall time (VILMAX – 0.15 V) to (VIHMIN + 0.15 V) tR Clock/data rise time 0.9 VCC to (VILMAX – 0.15 V) (1) (2) (3) (4) RECEIVE mode TRANSMIT mode 10 51.2 kHz 4.7 µs 4 µs 4.7 µs 4 µs 0 300 ns 250 See note (1) 25 35 4.7 4 ms µs 50 300 ms ns 1000 The BQ78350-R1A device times out when any clock low exceeds tTIMEOUT. tHIGH:MAX is minimum bus idle time. SMBC = 1 for t > 50 μs causes a reset of any transaction in progress involving the BQ78350-R1A device. tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to stop. tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to stop. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 7 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Figure 1. SMBus Timing Diagram 7.13 Typical Characteristics 174.5 1.2275 174.0 1.2270 ADC Offset Error ( V) Internal Voltage Reference (V) 1.2280 1.2265 1.2260 1.2255 1.2250 1.2245 1.2240 173.5 173.0 172.5 172.0 171.5 1.2235 1.2230 171.0 ±40 ±20 0 20 40 60 Temperature (ƒC) 80 ±40 C001 Figure 2. Internal Voltage Reference 8 Submit Documentation Feedback ±20 0 20 40 Temperature (ƒC) 60 80 C002 Figure 3. ADC Offset Error Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 Typical Characteristics (continued) 3.05 32.85 32.80 2.95 LFO Frequency (kHz) LED Sink Current (mA) 3.00 2.90 2.85 2.80 2.75 2.70 2.65 32.75 32.70 32.65 32.60 2.60 2.55 32.55 ±40 ±20 0 20 40 60 Temperature (ƒC) 80 ±40 0 ±20 20 40 60 80 Temperature (ƒC) C003 Figure 4. LED Sink Current C004 Figure 5. LFO Frequency 4.190 HFO Frequency (MHz) 4.185 4.180 4.175 4.170 4.165 4.160 ±40 ±20 0 20 40 Temperature (ƒC) 60 80 C005 Figure 6. HFO Frequency 8 Detailed Description 8.1 Overview The BQ78350-R1A li-ion and LiFePO4 Battery Management Controller is the companion to the BQ769x0 family of Analog Front End (AFE) protection devices. This chipset supports 3-series to 15-series cell applications with capacities up to 320 Ah, and is suitable for a wide range of portable or stationary battery applications. The BQ78350-R1A device provides an accurate fuel gauge and state-of-health (SoH) monitor, as well as the cell balancing algorithm and a full range of voltage-, current-, and temperature-based protection features. The battery data that the BQ78350-R1A device gathers can be accessed via an SMBus 1.1 interface, and stateof-charge (SoC) data can be displayed through optional LED or LCD display configurations. Battery history and diagnostic data are also kept within the device in non-volatile memory and are available over the same SMBus interface. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 9 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com 8.2 Functional Block Diagram COM, ALERT, KEYIN, SAFE, SMBD, SMBC, VEN, DISP SMBA, ADREN, SDA, SCL, PRECHG,VAUX, BAT, PRES GPIOA GPIOB LED1...5 PWRM 8 8 8 Oscillator System Clock 32 kHz Interrupt * 2 Input/Output Event* 1 Power Regulation AND Management Interrupt Controller VCC V SS MRST RBI System Clocks Reset* Wake Comparator Event* Analog Front End Delta-Sigma ADC AND Integrating Coulomb Counter Data (8-bit) CoolRISC CPU DMAddr (16-bit) SRP SRN System I /O (13-bit) PMAddr (15-bit) PMInst (22-bit) Program Memory Data Memory Communications SMBus Peripherals and Timers Copyright © 2017, Texas Instruments Incorporated 8.3 Feature Description The following section provides an overview of the device features. For full details on the BQ78350-R1A features, refer to the BQ78350-R1A Technical Reference Manual (SLUUBD3). 8.3.1 Primary (1st Level) Safety Features The BQ78350-R1A device supports a wide range of battery and system protection features that can be configured. The primary safety features include: • Cell over/undervoltage protection • Charge and discharge overcurrent • Short circuit protection • Charge and discharge overtemperature with independent alarms and thresholds for each thermistor 8.3.2 Secondary (2nd Level) Safety Features The secondary safety features of the BQ78350-R1A device can be used to indicate more serious faults via the SAFE pin. This pin can be used to blow an in-line fuse to permanently disable the battery pack from charging or discharging. The secondary safety protection features include: • Safety overvoltage • Safety undervoltage • Safety overcurrent in charge and discharge • Safety overtemperature in charge and discharge • Charge FET and Precharge FET fault 10 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 Feature Description (continued) • • • • Discharge FET fault Cell imbalance detection Open thermistor detection AFE communication fault 8.3.3 Charge Control Features The BQ78350-R1A charge control features include: • Provides a range of options to configure the charging algorithm and its actions based on the application requirements • Reports the appropriate charging current needed for constant current charging, and the appropriate charging voltage needed for constant voltage charging • Supports pre-charging/0-volt charging • Supports charge inhibit and charge suspend if battery pack temperature is out of temperature range 8.3.4 Fuel Gauging The BQ78350-R1A device uses Compensated End-of-Discharge Voltage (CEDV) technology to measure and calculate the available charge in battery cells. The BQ78350-R1A device accumulates a measure of charge and discharge currents and compensates the charge current measurement for the temperature and state-of-charge of the battery. The BQ78350-R1A device estimates self-discharge of the battery and also adjusts the self-discharge estimation based on temperature. 8.3.5 Lifetime Data Logging The BQ78350-R1A device offers lifetime data logging, where important measurements are stored for warranty and analysis purposes. The data monitored includes: • Lifetime maximum temperature • Lifetime minimum temperature • Lifetime maximum battery cell voltage per cell • Lifetime minimum battery cell voltage per cell • Cycle count • Maximum charge current • Maximum discharge current • Safety events that trigger SafetyStatus() updates. (The 12 most common are tracked.) 8.3.6 Authentication The BQ78350-R1A device supports authentication by the host using SHA-1. 8.3.7 Battery Parameter Measurements The BQ78350-R1A device digitally reads BQ769x0 registers containing recent values from the integrating analog-to-digital converter (CC) for current measurement and a second delta-sigma ADC for individual cell and temperature measurements. 8.3.7.1 Current and Coulomb Counting The integrating delta-sigma ADC (CC) in the companion BQ769x0 AFE measures the charge/discharge flow of the battery by measuring the voltage drop across a small-value sense resistor between the SRP and SRN pins. The 15-bit integrating ADC measures bipolar signals from –0.20 V to 0.20 V with 15-µV resolution. The AFE reports charge activity when VSR = V(SRP) – V(SRN) is positive, and discharge activity when VSR = V(SRP) – V(SRN) is negative. The BQ78350-R1A device continuously monitors the measured current and integrates the digital signal from the AFE over time, using an internal counter. To support large battery configurations, the current data can be scaled to ensure accurate reporting through the SMBus. The data reported is scaled based on the setting of the SpecificationInfo() command. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 11 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Feature Description (continued) 8.3.7.2 Voltage The BQ78350-R1A device updates the individual series cell voltages through the BQ769x0 at 1-s intervals. The BQ78350-R1A device configures the BQ769x0 to connect to the selected cells in sequence and uses this information for cell balancing and individual cell fault functions. The internal 14-bit ADC of the BQ769x0 measures each cell voltage value, which is then communicated digitally to the BQ78350-R1A device where they are scaled and translated into unit mV. The maximum supported input range of the ADC is 6.075 V. The BQ78350-R1A device also separately measures the average cell voltage through an external translation circuit at the BAT pin. This value is specifically used for the fuel gauge algorithm. The external translation circuit is controlled via the VEN pin so that the translation circuit is only enabled when required to reduce overall power consumption. For correct operation, VEN requires an external pull-up to VCC, typically 100 k. In addition to the voltage measurements used by the BQ78350-R1A algorithms, there is an optional auxiliary voltage measurement capability via the VAUX pin. This feature measures the input on a 1-s update rate and provides the programmable scaled value through an SMBus command. To support large battery configurations, the voltage data can be scaled to ensure accurate reporting through the SMBus. The data reported is scaled based on the setting of the SpecificationInfo() command. 8.3.7.3 Temperature The BQ78350-R1A device receives temperature information from external or internal temperature sensors in the BQ769x0 AFE. Depending on the number of series cells supported, the AFE will provide one, two, or three external thermistor measurements. 8.4 Device Functional Modes The BQ78350-R1A device supports three power modes to optimize the power consumption: • In NORMAL mode, the device performs measurements, calculations, protection decisions, and data updates in 1-s intervals. Between these intervals, the device is in a reduced power mode. • In SLEEP mode, the device performs measurements, calculations, protection decisions, and data updates in adjustable time intervals. Between these intervals, the device is in a reduced power mode. • In SHUTDOWN mode, the device is completely powered down. The device indicates through the PWRM pin which power mode it is in. This enables other circuits to change based on the power mode detection criteria of the device. 8.5 Programming 8.5.1 Physical Interface The device uses SMBus 1.1 with packet error checking (PEC) as an option and is used as a slave only. 8.5.2 SMBus Address The device determines its SMBus 1.1 slave address through a voltage on SMBA, Pin 30. The voltage is set with a pair of high-value resistors if an alternate address is required and is measured either upon exit of POR or when system present is detected. ADREN, Pin 29, may be used to disable the voltage divider after use to reduce power consumption. 8.5.3 SMBus On and Off State The device detects an SMBus off state when SMBC and SMBD are logic-low for ≥ 2 seconds. Clearing this state requires either SMBC or SMBD to transition high. Within 1 ms, the communication bus is available. 12 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 9 Application and Implementation 9.1 Application Information The BQ78350-R1A Battery Management Controller companion to the BQ769x0 family of battery monitoring AFEs enables many standard and enhanced battery management features in a 3-series to 15-series li-ion/li-polymer battery pack. To design and implement a complete solution, users need the Battery Management Studio (BQSTUDIO) tool to configure a "golden image" set of parameters for a specific battery pack and application. The BQSTUDIO tool is a graphical user-interface tool installed on a PC during development. The firmware installed in the product has default values, which are summarized in the BQ78350-R1A Technical Reference Manual (SLUUBD3). With the BQSTUDIO tool, users can change these default values to cater to specific application requirements. Once the system parameters are known (for example, fault trigger thresholds for protection, enable/disable of certain features for operation, configuration of cells, among others), the data can be saved. This data is referred to as the "golden image.” 9.2 Typical Applications The BQ78350-R1A device can be used with the BQ76920, BQ76930, or BQ76940 device, but it is set up, by default, for a 5-series cell, 4400-mA battery application using the BQ76920 AFE. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 13 14 Submit Documentation Feedback Product Folder Links: BQ78350-R1A J4 BATT- SMB is required for gauge setup. Signals would require isolation circuit for use in system SMB 1 2 3 4 GND E2 E4 D32 5.6V D30 5.6V GND R73 R76 1.00Meg 1.00Meg 100 100 R80 100 R72 R77 ALERT SDA SCL REGOUT BATT+ 100 R70 GND R48 13.7k C23 3300pF R47 300k 25 ppm/C Q8 BSS84-7-F GND R50 100k R49 100k CSD17381F4 Q9 R51 1.00Meg GND 1 28 30 24 11 13 8 9 2 3 4 6 7 26 BQ78350DBT NC NC SMBA MRST SMBD SMBC PRES KEYIN ALERT SDA SCL VAUX BAT VCC U2 VSS VSS VSS VSS RBI PRECHG PWRM SAFE ADREN VEN DISP LED1 LED2 LED3 LED4 LED5 21 22 23 25 27 5 15 10 29 12 14 16 17 18 19 20 GND GND C25 0.1µF R57 221k Copyright © 2017, Texas Instruments Incorporated GND C24 0.1µF R55 100k PRE BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Typical Applications (continued) 9.2.1 Schematic The schematic is split into two sections: the gas gauge section (Figure 7) and the AFE section (Figure 8). Figure 7. 5-Series Cell Typical Schematic, Gas Gauge (BQ78350-R1A) Copyright © 2019, Texas Instruments Incorporated 395021006 1 2 3 4 5 6 C5 C4 C3 C2 C1 C0 BATT- C0 C1 C2 C3 C4 C5 R11 10.0k R12 100 R13 100 R15 100 R16 100 R17 100 R18 100 R19 100 Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BATT- GND BATT+ D23 SMCJ28A 28V GND C1 1µF C3 1µF C4 1µF C5 1µF C6 1µF C7 1µF GND GND Net-Tie NT1 0.1µF C27 0.001 R60 R59 100 0.1µF C28 R61 100 GND GND 0.1µF C29 R35 499k C13 470pF 11 20 19 18 12 13 14 15 16 17 C1 R36 Q12 CSD17501Q5A 5,6, 7,8 R63 0 PRE VSS CHG DSG SCL SDA TS1 CAP1 REGOUT 3.01k 1,2,3 R62 1.00Meg ALERT BAT REGSRC BQ7692000PW NC ALERT SRN SRP VC5 VC4 VC3 VC2 VC1 VC0 U1 10 1 2 C31 0.1µF 0.1µF 1.0k R64 10.0k R65 4-1437565-1 S1 GND C15 2.2µF C30 3 4 GND 3 2 1 5 4 6 7 8 9 3 1 2 R67 1.00Meg Q13 CSD17381F4 R66 10.0k D24 Q14 MMBTA92 C16 1µF GND 10V D25 18V D26 C18 4700pF t° 1,2,3 R68 1.00Meg R69 1.00k Q16 Q15 CSD17501Q5A 5,6, 7,8 CHG GND RT1 10.0k ohm 4 D11 4 J1 BATT+ R71 1.00Meg D27 16V D28 C21 4.7µF D29 R41 R42 10.0k 10.0k C32 0.1µF C33 0.1µF E1 SCL SDA PACK+ PACK- REGOUT J3 1 J2 1 www.ti.com SLUSE05 – DECEMBER 2019 BQ78350-R1A Typical Applications (continued) Figure 8. 5-Series Cell Typical Schematic, AFE (BQ76920) Submit Documentation Feedback 15 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Typical Applications (continued) 9.2.2 Design Requirements Table 1 lists the device's default settings and feature configurations when shipped from Texas Instruments. Table 1. TI Default Settings Design Parameter Value or State Cell Configuration 5s2p (5-series with 1 Parallel) Design Capacity 4400 mAh Device Chemistry Chem ID 1210 (LiCoO2/graphitized carbon) Cell Over Voltage (per cell) 4250 mV Cell Under Voltage (per cell) 2500 mV Overcurrent in CHARGE Mode 6000 mA Overcurrent in DISCHARGE Mode –6000 mA Over Load Current 0.017 V/Rsense across SRP, SRN Short Circuit in DISCHARGE Mode 0.44 V/Rsense across SRP, SRN Over Temperature in CHARGE Mode 55°C Over Temperature in DISCHARGE Mode 55°C SAFE Pin Activation Enabled No Safety Overvoltage (per cell) 4400 mV Safety Undervoltage (per cell) 2500 mV Shutdown Voltage 2300 mV Cell Balancing Enabled Yes Internal or External Temperature Sensor External Enabled SMB BROADCAST Mode Disabled Display Mode (# of bars and LED or LCD) 5-bar LED Dynamic SMB Address Enabled No (SMB Address = 0x16) KEYIN Feature Enabled No PRES Feature Enabled No 9.2.3 Detailed Design Procedure By default, the BQ78350-R1A device is initially set up to keep the CHG, DSG, and PCHG FETs OFF and many other features disabled until the appropriate ManufacturingStatus() bit that enables ManufacturerAccess() commands are received, or when the default Manufacturing Status is changed. In the first steps to evaluating the device and BQ769x0 AFE, use the ManufacturerAccess() commands to ensure correct operation of features, and if they are needed in the application. Then enable features' reading for more indepth application evaluation. Prior to using the device, the default settings should be evaluated as the device has many configuration settings and options. These can be separated into five main areas: • Measurement System • Gas Gauging • Charging • Protection • Peripheral Features The key areas of focus are covered in the following sections. 16 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 9.2.3.1 Measurement System 9.2.3.1.1 Cell Voltages The device is required to be configured in the AFE Cell Map register to determine which cells to measure based on the physical connections to the BQ76920 AFE. The cell voltage data is available through CellVoltage1()…CellVoltage5(). The cell voltages are reported as they are physically stacked. For example, if the device is configured for 3-series cells connected to VC1, VC2, and VC5 per the AFE Cell Map, then the cell voltages are still reported via CellVoltage1(), CellVoltage2(), and CellVoltage3(), respectively. For improved accuracy, offset calibration is available for each of these values and can be managed through the BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual (SLUUBD3) in the Calibration chapter. 9.2.3.1.2 External Average Cell Voltage This is enabled by default (DA Configuration [ExtAveEN] = 1) and uses the external resistor divider connected to the VEN and BAT pins to determine the average cell voltage of the battery pack. The average cell voltage is available through ExtAveCellVoltage(). CAUTION Care should be taken in the selection of the resistor and FETs used in this divider circuit as the tolerance and temperature drift of these components can cause increased measurement error and a gas gauging error if CEDV Gauging Config [ExtAveCell] = 1 (default = 1). For improved accuracy, offset and gain calibration is available for this value and can be managed through the BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual (SLUUBD3) in the Calibration chapter. 9.2.3.1.3 Current Current data is taken from the BQ76920 and made available through Current(). The selection of the current sense resistor connected to SRP and SRN of the BQ76920 is very important and there are several factors involved. The aim of the sense resistor selection is to use the widest ADC input voltage range possible. To maximize accuracy, the sense resistor value should be calculated based on the following formula: RSNS(min) = V(SRP) – V(SRN) / I(max) Where: |V(SRP) – V(SRN)| = 200 mV I(max) = Maximum magnitude of charge of discharge current (transient or DC) (1) NOTE RSNS(min) should include tolerance, temperature drift over the application temperature, and PCB layout tolerances when selecting the actual nominal resistor value. When selecting the RSNS value, be aware that when selecting a small value, for example, 1 mΩ, then the resolution of the current measurement will be > 1 mA. In the example of RSNS = 1 mΩ, the current LSB will be 8.44 mA. For improved accuracy, offset and gain calibration are available for this value and can be managed through the BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual (SLUUBD3) in the Calibration chapter. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 17 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com 9.2.3.1.4 Temperature By default, the 78350 uses an external negative temperature coefficient (NTC) thermistor connected to the BQ76920 as the source for the Temperature() data. The measurement uses a polynomial expression to transform the BQ76920 ADC measurement into 0.1°C resolution temperature measurement. The default polynomial coefficients are calculated using the Semitec 103AT, although other resistances and manufacturers can be used. To calculate the External Temp Model coefficients, use the BQ78350-R1 Family Thermistor Coefficient Calculator shown in the application report, Using the BQ78350-R1 (SLUA924). For improved accuracy, offset calibration is available for this value and can be managed through the BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual (SLUUBD3) in the Calibration chapter. 9.2.3.2 Gas Gauging The default battery chemistry (Chem ID) is 1210, which is a Li-CoO2 type chemistry. The Chem ID should be updated using BQSTUDIO to select the specific battery used in the application. See the application report, Using the BQ78350-R1 (SLUA924) for details on selecting the Chem ID. The default maximum capacity of the battery is 4400 mAh and this should be changed based on the cell and battery configuration chosen. The CEDV gas gauging algorithm requires seven coefficients to enable accurate gas gauging. The default values are generic for Li-CoO2 chemistry, but for accurate gas gauging these coefficients should be re-calculated. The procedure to gather the required data and generate the coefficients can be found at http://www.ti.com/tool/GPCCEDV. More details on the required steps to set up the BQ78350-R1A device for gas gauging can be found in the application report, Using the BQ78350-R1 (SLUA924). 9.2.3.3 Charging The charging algorithm in the BQ78350-R1A device is configured to support Constant Voltage/Constant Current (CC/CV) charging of a nominal 18-V, 4400-mAh battery. 9.2.3.3.1 Fast Charging Voltage The charging voltage is configured (Fast Charging: Voltage) based on an individual cell basis (for example, 4200 mV), but the ChargingVoltage() is reported as the required battery voltage (for example, 4200 mV × 5 = 21000 mV). 9.2.3.3.2 Fast Charging Current The fast charging current is configured to 2000 mA (Fast Charging: Current) by default, which is conservative for the majority of 4400-mAh battery applications. This should be configured based on the battery configuration, cell manufacturer's data sheet, and system power design requirements. 9.2.3.3.3 Other Charging Modes The BQ78350-R1A device is configured to limit, through external components, and report either low or 0 ChargingVoltage() and ChargingCurrent(), based on temperature, voltage, and fault status information. The Charge Algorithm section of the BQ78350-R1A Technical Reference Manual (SLUUBD3) details these features and settings. 9.2.3.4 Protection The safety features and settings of the BQ78350-R1A device are configured conservatively and are suitable for bench evaluation. However, in many cases, users will need to change these values to meet system requirements. These values should not be changed to exceed the safe operating limits provided by the cell manufacturer and any industry standard. For details on the safety features and settings, see the Protections and Permanent Fail sections of the BQ78350-R1A Technical Reference Manual (SLUUBD3). 18 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 9.2.3.5 Peripheral Features 9.2.3.5.1 LED Display The BQ78350-R1A device is configured by default to display up to five LEDs in a bar graph configuration based on the value of RemainingStateOfCharge() (RSOC). Each LED represents 20% of RSOC and is illuminated when the BQ78350-R1A DISP pin transitions low, and remains on for a programmable period of time. In addition to many other options, the number of LEDs used and the percentage at which they can be illuminated are configurable. 9.2.3.5.2 SMBus Address Although the SMBus slave address is a configurable value in the BQ78350-R1A device, this feature is disabled by default and the slave address is 0x16. The SMBus Address feature can allow up to nine different addresses based on external resistor value variation per address. The default setup of the BQ78350-R1A device is generic, but there are many additional features that can be enabled and configured to support a variety of system requirements. These are detailed in the BQ78350-R1A Technical Reference Manual (SLUUBD3). 9.2.4 Application Performance Plots When the BQ78350-R1A device is powered up, there are several signals that are enabled at the same time. Figure 9 shows the rise time of each of the applicable signals. Figure 9. VCC, MRST, VEN, and PWRM upon Power Up Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 19 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com The BQ78350-R1A device takes a short period of time to boot up before the device can begin updating battery parameter data that can be then reported via the SMBus or the optional display. Normal operation after boot-up is indicated by the VEN pin pulsing to enable voltage data measurements for the ExtAveCell() function. Figure 10 shows the timing of these signals. Figure 10. Valid VCC to Full FW Operation Figure 11, Figure 12, Figure 13, and Figure 14 show Measurement System Performance Data of the BQ78350R1A device + the BQ76920 EVM. This data was taken using a standard BQ76920 EVM with power supplies providing the voltage and current reference inputs. 10 8 10 At 4200mV 8 6 4 Current Error (mA) Voltage Error (mV) 6 2 0 ±2 ±4 ±6 4 2 0 ±2 ±4 ±6 ±8 ±8 ±10 ±10 ±40 ±20 0 20 40 60 80 100 Forced Temperature (ƒC) ±20 0 20 40 Forced Temperature (ƒC) C006 Figure 11. Cell Voltage Error Reported Through CellVoltage1…5() 20 At 2000mA 60 80 C008 Figure 12. Battery Charge Current Error Reported Through Current() Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 6 10 8 At ±2000mA 4 Temperature Error (ƒC) Current Error (mA) 6 4 2 0 ±2 ±4 ±6 2 0 ±2 ±4 ±6 ±8 ±10 ±12 ±8 ±10 ±14 ±20 0 20 40 60 Forced Temperature (ƒC) 80 ±20 Figure 13. Battery Discharge Current Error Reported Through Current() 0 20 40 60 80 Forced Temperature (ƒC) C009 C007 Figure 14. Battery Temperature (External) Error Reported Through Temperature() 10 Power Supply Recommendations The BQ78350-R1A device is powered directly from the 2.5-V REGOUT pin of the BQ769x0 companion AFE. An input capacitor of 0.1 µF is required between VCC and VSS and should be placed as close to the BQ78350-R1A device as possible. To ensure correct power up of the BQ78350-R1A device, a 100-k resistor between MRST and VCC is also required. See the Schematic for further details. 11 Layout 11.1 Layout Guidelines 11.1.1 Power Supply Decoupling Capacitor Power supply decoupling from VCC to ground is important for optimal operation of the BQ78350-R1A device. To keep the loop area small, place this capacitor next to the IC and use the shortest possible traces. A large-loop area renders the capacitor useless and forms a small-loop antenna for noise pickup. Ideally, the traces on each side of the capacitor must be the same length and run in the same direction to avoid differential noise during ESD. If possible, place a via near the VSS pin to a ground plane layer. Placement of the RBI capacitor is not as critical. It can be placed further away from the IC. 11.1.2 MRST Connection The MRST pin controls the gas gauge reset state. The connections to this pin must be as short as possible to avoid any incoming noise. Direct connection to VCC is possible if the reset functionality is not desired or necessary. If unwanted resets are found, one or more of the following solutions may be effective: • Add a 0.1-μF capacitor between MRST and ground. • Provide a 1-kΩ pullup resistor to VCC at MRST. • Surround the entire circuit with a ground pattern. If a test point is added at MRST, it must be provided with a 10-kΩ series resistor. 11.1.3 Communication Line Protection Components The 5.6-V Zener diodes, which protect the BQ78350-R1A communication pins from ESD, must be located as close as possible to the pack connector. The grounded end of these Zener diodes must be returned to the PACK(–) node, rather than to the low-current digital ground system. This way, ESD is diverted away from the sensitive electronics as much as possible. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 21 BQ78350-R1A SLUSE05 – DECEMBER 2019 www.ti.com Layout Guidelines (continued) 11.1.4 ESD Spark Gap Protect the SMBus clock, data, and other communication lines from ESD with a spark gap at the connector. The following pattern is recommended, with 0.2-mm spacing between the points. Figure 15. Recommended Spark-Gap Pattern Helps Protect Communication Lines From ESD 11.2 Layout Example C21 C22 bq78350 VCC RBI Figure 16. BQ78350-R1A Layout 22 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A BQ78350-R1A www.ti.com SLUSE05 – DECEMBER 2019 12 Device and Documentation Support 12.1 Related Documentation For related documentation, see the following: • BQ78350-R1A Technical Reference Manual (SLUUC78) • Using the BQ78350-R1 Application Report (SLUA924) • BQ769x0 3-Series to 15-Series Cell Battery Monitor Family for Li-Ion and Phosphate Applications Data Manual (SLUSBK2) 12.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: BQ78350-R1A 23 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) BQ78350DBT-R1A ACTIVE TSSOP DBT 30 60 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 78350R1A BQ78350DBTR-R1A ACTIVE TSSOP DBT 30 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 78350R1A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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