BUF22821AIDCPR

BUF22821AIDCPR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TSSOP-38

  • 描述:

    BUF22821AIDCPR

  • 数据手册
  • 价格&库存
BUF22821AIDCPR 数据手册
BU F22 821 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory Check for Samples: BUF22821 FEATURES DESCRIPTION • 24-CHANNEL GAMMA – 22-CHANNEL PROGRAMMABLE – 2-CHANNEL STATIC GAMMA • 2-CHANNEL PROGRAMMABLE VCOM • 10-BIT RESOLUTION • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT MEMORY BANKS • RAIL-TO-RAIL OUTPUT • LOW SUPPLY CURRENT: 0.5mA/channel • SUPPLY VOLTAGE: 9V to 20V • DIGITAL SUPPLY: 2V to 5.5V • I2C™ INTERFACE The BUF22821 offers 22 programmable gamma channels, two programmable VCOM channels, and two static gamma channels. It is ideal for the new 10-bit source drivers that require 22 gamma channels. 1 234 APPLICATIONS • TFT-LCD REFERENCE DRIVERS Digital (2.0V to 5.5V) BKSEL Analog (9V to 20V) 1 STATOUTH STATINH AVDD OUT1 The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF22821 supports up to 16 write operations to the on-chip memory. The BUF22821 has two separate banks of memory, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves. All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 100mV of either supply rail with a 10mA load. All channels are programmed using an I2C interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz. The BUF22821 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF22821 is offered in a HTSSOP-38 PowerPAD™ package. It is specified from –40°C to +85°C. RELATED PRODUCTS DAC Registers ¼ ¼ ¼ ¼ ¼ DAC Registers 16x Nonvolatile Memory BANK0 16x Nonvolatile Memory BANK1 OUT2 OUT21 FEATURES PRODUCT 12-Channel Gamma Correction Buffer BUF12800 20-Channel Programmable Buffer, 10-Bit, VCOM BUF20800 16-/20-Channel Programmable Buffer with Memory BUF20820 Programmable VCOM Driver BUF01900 18V Supply, Traditional Gamma Buffers BUF11704 22V Supply, Traditional Gamma Buffers BUF11705 OUT22 STATINL AVDD STATOUTL VCOM1 VCOM2 SDA SCL Control IF BUF22821 A0 1 2 3 4 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments. 2 I C is a trademark of NXP Semiconductors. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION (1) (1) PRODUCT PACKAGE PACKAGE DESIGNATOR PACKAGE MARKING BUF22821 HTSSOP-38 DCP BUF22821 For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range (unless otherwise noted). BUF22821 UNIT Supply Voltage, VS +22 V Supply Voltage, VSD +6 V Digital Input Terminals, SCL, SDA, AO, BKSEL: Voltage –0.5 to +6 V Digital Input Terminals, SCL, SDA, AO, BKSEL: Current ±10 mA Analog Input Terminals, STATINL, STATINH: Voltage –0.5 to VS + 0.5 V Analog Input Terminals, STATINL, STATINH: Current ±10 mA Output Short-Circuit (2) Continuous Operating Temperature –40 to +95 °C Storage Temperature –65 to +150 °C Junction Temperature +125 °C Human Body Model 4000 V Charged-Device Model 1000 V Machine Model 200 V ESD Ratings (1) (2) 2 Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. Short-circuit to ground, one channel at a time. Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = –40°C to +85°C. At TA = +25°C, VS = +18V, VSD = +2V, RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted. BUF22821 PARAMETER CONDITIONS MIN TYP 17.7 17.85 MAX UNIT ANALOG GAMMA BUFFER CHANNELS Reset Value Code 512 OUT 1–22 Output Swing: High Code = 1023, Sourcing 10mA OUT 1–22 Output Swing: Low Code = 0, Sinking 10mA STATINH Output Swing: High VIN = 18V, Sourcing 10mA STATINL Output Swing: Low VIN = 0V, Sinking 10mA VCOM1, 2 Output Swing: High Code = 1023, Sourcing 100mA VCOM1, 2 Output Swing: Low Code = 0, Sinking 100mA Continuous Output Current Note 9 0.07 17.7 ±20 vs Temperature Integral Nonlinearity Code 512 V mA ±50 mV ±25 μV/°C Bits INL 0.3 Differential Nonlinearity DNL 0.3 Load Regulation, 10mA REG Code 512 or VCC/2, IOUT = +5mA to –5mA Step V V 2 30 Output Accuracy V V 0.25 16.2 0.6 (1) V 0.2 17.85 0.17 13 V 0.5 Bits 1.5 mV/mA 16 Cycles OTP MEMORY Number of OTP Write Cycles Memory Retention 100 Years ANALOG POWER SUPPLY Operating Range Total Analog Supply Current 9 IS Outputs at Reset Values, No Load 12 Over Temperature 20 V 17 mA 18 mA DIGITAL Logic 1 Input Voltage VIH Logic 0 Input Voltage VIL Logic 0 Output Voltage 0.7 × VSD VOL ISINK = 3mA Input Leakage Clock Frequency V 0.3 × VSD fCLK V 0.15 0.4 V ±0.01 ±10 μA Standard/Fast Mode 400 kHz High-Speed Mode 3.4 MHz DIGITAL POWER SUPPLY Operating Range Digital Supply Current VSD ISD 2.0 Outputs at Reset Values, No Load, Two-Wire Bus Inactive 115 Over Temperature 5.5 V 150 μA μA 115 TEMPERATURE RANGE –40 Specified Range Junction Temperature < +125°C Operating Range Storage Range Thermal Resistance (1) °C –40 +95 °C –65 +150 °C θJA HTSSOP-38 (1) +85 Note (1) 40 °C/W Thermal pad attached to printed circuit board (PCB), 0lfm airflow, JEDEC High-K test board. Copyright © 2007–2011, Texas Instruments Incorporated 3 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com PIN CONFIGURATION BUF22821 HTSSOP-38 Top View VCOM2 1 38 VCOM1 STATINH 2 37 STATINL OUT21 3 36 OUT20 OUT22 4 35 OUT19 OUT1 5 34 STATOUTL OUT2 6 33 OUT18 OUT3 7 32 OUT17 OUT4 8 31 OUT16 OUT5 9 30 OUT15 OUT6 10 29 OUT14 (1) 11 28 GNDA VS 12 27 VS OUT7 13 26 OUT13 OUT8 14 25 OUT12 OUT9 15 24 OUT11 STATOUTH 16 23 OUT10 VSD 17 22 GNDD SCL 18 21 BKSEL SDA 19 20 A0 GNDA PowerPAD Lead-Frame Die Pad Exposed on Underside (must connect to GNDA and GNDD) (1) (1) NOTE: (1) GNDA and GNDD must be connected together. 4 Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com PIN DESCRIPTIONS PIN # NAME DESCRIPTION 1 VCOM2 2 STATINH VCOM channel 2 3 OUT21 DAC output 21 4 OUT22 DAC output 22 5 OUT1 DAC output 1 6 OUT2 DAC output 2 7 OUT3 DAC output 3 8 OUT4 DAC output 4 9 OUT5 DAC output 5 10 OUT6 DAC output 6 11, 28 GNDA Analog ground; must be connected to digital ground (GNDD). 12, 27 VS 13 OUT7 DAC output 7 14 OUT8 DAC output 8 15 OUT9 DAC output 9 16 STATOUTH 17 VSD Digital supply; connect to logic supply 18 SCL Serial clock input; open-drain, connect to pull-up resistor. 19 SDA Serial data I/O; open-drain, connect to pull-up resistor. 20 A0 21 BKSEL Selects memory bank 0 or 1; either connect to logic 1 to select bank 1 or logic 0 to select bank 0. 22 GNDD Digital ground; must be connected to analog ground at the BUF22821. 23 OUT10 DAC output 10 24 OUT11 DAC output 11 25 OUT12 DAC output 12 26 OUT13 DAC output 13 29 OUT14 DAC output 14 30 OUT15 DAC output 15 31 OUT16 DAC output 16 32 OUT17 DAC output 17 33 OUT18 DAC output 18 34 STATOUTL 35 OUT19 DAC output 19 36 OUT20 DAC output 20 37 STATINL 38 VCOM1 Static gamma input high; voltage can be set by external voltage divider. VS connected to analog supply Static gamma output high; connect to gamma input on source driver that is closest to VS. A0 address pin for I2C address; either connect to logic 1 or logic 0. Static gamma output low; connect to gamma input on source driver that is closest to GND Static gamma input low; voltage can be set by external voltage divider VCOM channel 1 Copyright © 2007–2011, Texas Instruments Incorporated 5 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com TYPICAL CHARACTERISTICS At TA = +25°C, VS = +18V, VSD = +2V, RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted. OUTPUT VOLTAGE vs OUTPUT CURRENT (Channels 1–22) 18.0 17.5 17.0 16.5 16.0 15.5 15.0 Output Voltage (V) Output Voltage (V) OUTPUT VOLTAGE vs OUTPUT CURRENT (VCOM1 and VCOM2) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 18.0 17.5 17.0 16.5 16.0 15.5 15.0 3.0 2.5 2.0 1.5 1.0 0.5 0 150 0 25 50 OUTPUT VOLTAGE vs OUTPUT CURRENT (STATOUTL) OUTPUT VOLTAGE vs OUTPUT CURRENT (STATOUTH) 25 50 75 150 100 125 18.0 17.5 17.0 16.5 16.0 15.5 15.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0 150 25 50 75 100 125 150 Output Current (mA) Figure 3. Figure 4. DIGITAL SUPPLY CURRENT vs TEMPERATURE ANALOG SUPPLY CURRENT vs TEMPERATURE 120 14.0 118 13.5 Analog Supply Current (mA) Digital Supply Current (mA) 125 Figure 2. Output Current (mA) 116 114 112 110 108 106 104 13.0 12.5 12.0 11.5 11.0 10.5 10.0 102 9.5 100 -50 -25 0 25 50 Temperature (°C) Figure 5. 6 100 Figure 1. 18.0 17.5 17.0 16.5 16.0 15.5 15.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0 75 Output Current (mA) Output Voltage (V) Output Voltage (V) Output Current (mA) 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Figure 6. Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS = +18V, VSD = +2V, RL = 1.5kΩ connected to ground, and CL = 200pF, unless otherwise noted. OUTPUT VOLTAGE vs TEMPERATURE DIFFERENTIAL LINEARITY ERROR 9.020 0.15 10 Typical Units Shown 9.015 0.10 9.005 0.05 Error (LSB) Initial Voltage (V) 9.010 9.000 8.995 0 -0.05 8.990 -0.10 8.985 8.980 -0.15 -50 -25 0 25 50 100 75 125 0 200 Temperature (°C) 400 600 800 1000 Input Code Figure 7. Figure 8. INTEGRAL LINEARITY ERROR BKSEL SWITCHING TIME DELAY 0.15 0.10 Error (LSB) BKSEL (2V/div) 0.05 780ms 0 9V -0.05 DAC Channel (2V/div) -0.10 5V -0.15 0 200 400 600 800 1ms/div 1000 Input Code Figure 9. Figure 10. Output Voltage (2V/div) LARGE-SIGNAL STEP RESPONSE Time (2ms/div) Figure 11. Copyright © 2007–2011, Texas Instruments Incorporated 7 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com APPLICATION INFORMATION GENERAL The BUF22821 programmable voltage reference allows fast and easy adjustment of 22 programmable gamma reference outputs and two VCOM outputs, each with 10-bit resolution. The BUF22821 is programmed through a high-speed, I2C interface. The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF22821 supports up to 16 write operations to the on-chip memory. The BUF22821 has two separate banks of memory, allowing simultaneous storage of two different gamma curves to facilitate dynamic switching between gamma curves. The BUF22821 can be powered using an analog supply voltage from 9V to 20V, and a digital supply from 2V to 5.5V. The digital supply must be applied prior to the analog supply to avoid excessive current and power consumption, or possibly even damage to the device if left connected only to the analog supply for extended periods of time. A typical configuration of the BUF22821 is illustrated in Figure 12. TWO-WIRE BUS OVERVIEW The BUF22821 communicates through an industry-standard, two-wire interface to receive data in slave mode. This standard uses a two-wire, open-drain interface that supports multiple devices on a single bus. Bus lines are driven to a logic low level only. The device that initiates the communication is called a master, and the devices controlled by the master are slaves. The master generates the serial clock on the clock signal line (SCL), controls the bus access, and generates the START and STOP conditions. To address a specific device, the master initiates a START condition by pulling the data signal line (SDA) from a HIGH to a LOW logic level while SCL is HIGH. All slaves on the bus shift in the slave address byte on the rising edge of SCL, with the last bit indicating whether a read or write operation is intended. During the ninth clock pulse, the slave being addressed responds to the master by generating an Acknowledge and pulling SDA LOW. Data transfer is then initiated and eight bits of data are sent, followed by an Acknowledge bit. During data transfer, SDA must remain stable while SCL is HIGH. Any change in SDA while SCL is HIGH is interpreted as a START or STOP condition. Once all data have been transferred, the master generates a STOP condition, indicated by pulling SDA from LOW to HIGH while SCL is HIGH. The BUF22821 can act only as a slave device; therefore, it never drives SCL. SCL is an input only for the BUF22821. ADDRESSING THE BUF22821 The address of the BUF22821 is 111010x, where x is the state of the A0 pin. When the A0 pin is LOW, the device acknowledges on address 74h (1110100). If the A0 pin is HIGH, the device acknowledges on address 75h (1110101). The A0 pin settings and BUF22821 address options are shown in Table 1. Other valid addresses are possible through a simple mask change. Contact your TI representative for information. Table 1. Quick-Reference Table of BUF22821 Addresses DEVICE/COMPONENT BUF22821 Address: ADDRESS A0 pin is LOW (device acknowledges on address 74h) 1110100 A0 pin is HIGH (device acknowledges on address 75h) 1110101 Table 2. Quick-Reference Table of Command Codes 8 COMMAND CODE General Call Reset Address byte of 00h followed by a data byte of 06h. High-Speed Mode 00001xxx, with SCL ≤ 400kHz; where xxx are bits unique to the Hs-capable master. This byte is called the Hs master code. Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com BUF22821 (1) VCOM2 VS (1) (1) 38 VCOM1 (3) 37 VS OUT21 OUT20 36 4 OUT22 OUT19 35 5 OUT1 STATOUTL 34 6 OUT2 OUT18 33 VCOM2 2 STATINH 3 (1) (1) Source Driver (1) Source Driver OUT4 OUT16 31 9 OUT5 OUT15 30 10 OUT6 OUT14 29 11 GNDA (2) 28 12 VS VS 27 13 OUT7 OUT13 26 14 OUT8 OUT12 25 (1) 3.3V 1mF (1) (1) (1) (2) GNDA 10mF VS (1) Source Driver (1) OUT9 OUT11 24 16 STATOUTH OUT10 23 17 VSD (2) 22 18 SCL BKSEL 21 19 SDA AO 20 100nF 100nF (1) 15 (1) Source Driver (1) 8 (1) (1) (1) 32 (1) (1) (1) OUT17 (1) 10mF STATINL OUT3 (1) 100nF (3) 7 (1) VS (1) VCOM1 1 (1) GNDD Timing Controller (1) RC combination optional. (2) GNDA and GNDD must be connected together. (3) Connecting a capacitor to this node is not recommended. Figure 12. Typical Application Configuration Copyright © 2007–2011, Texas Instruments Incorporated 9 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com DATA RATES OUTPUT VOLTAGE The two-wire bus operates in one of three speed modes: • Standard: allows a clock frequency of up to 100kHz; • Fast: allows a clock frequency of up to 400kHz; and • High-speed mode (also called Hs mode): allows a clock frequency of up to 3.4MHz. Buffer output values are determined by the analog supply voltage (VS) and the decimal value of the binary input code used to program that buffer. The value is calculated using Equation 1: CODE10 VOUT = VS ´ 1024 (1) The BUF22821 is fully compatible with all three modes. No special action is required to use the device in Standard or Fast modes, but High-speed mode must be activated. To activate High-speed mode, send a special address byte of 00001xxx, with SCL = 400kHz, following the START condition; where xxx are bits unique to the Hs-capable master, which can be any value. This byte is called the Hs master code. (Note that this is different from normal address bytes—the low bit does not indicate read/write status.) The BUF22821 responds to the High-speed command regardless of the value of these last three bits. The BUF22821 does not acknowledge this byte; the communication protocol prohibits acknowledgement of the Hs master code. On receiving a master code, the BUF22821 switches on its Hs mode filters, and communicates at up to 3.4MHz. Additional high-speed transfers may be initiated without resending the Hs mode byte by generating a repeat START without a STOP. The BUF22821 switches out of Hs mode with the next STOP condition. GENERAL-CALL RESET AND POWER-UP The BUF22821 responds to a General-Call Reset, which is an address byte of 00h (0000 0000) followed by a data byte of 06h (0000 0110). The BUF22821 acknowledges both bytes. Upon receiving a General-Call Reset, the BUF22821 performs a full internal reset, as though it had been powered off and then on. It always acknowledges the General-Call address byte of 00h (0000 0000), but does not acknowledge any General-Call data bytes other than 06h (0000 0110). When the BUF22821 powers up, it automatically performs a reset. As part of the reset, the BUF22821 is configured for all outputs to change to the last programmed nonvolatile memory values, or 1000000000 if the nonvolatile memory values have not been programmed. 10 The BUF22821 outputs are capable of a full-scale voltage output change in typically 5μs—no intermediate steps are required. UPDATING THE DAC OUTPUTS Because the BUF22821 features a double-buffered register structure, updating the digital-to-analog converter (DAC) and/or the VCOM register is not the same as updating the DAC and/or VCOM output voltage. There are two methods for updating the DAC/VCOM output voltages. Method 1: Method 1 is used when it is desirable to have the DAC/VCOM output voltage change immediately after writing to a DAC register. For each write transaction, the master sets data bit 15 to a '1'. The DAC/VCOM output voltage update occurs after receiving the 16th data bit for the currently-written register. Method 2: Method 2 is used when it is desirable to have all DAC/VCOM output voltages change at the same time. First, the master writes to the desired DAC/VCOM channels with data bit 15 a '0'. Then, when writing the last desired DAC/VCOM channel, the master sets data bit 15 to a '1'. All DAC/VCOM channels are updated at the same time after receiving the 16th data bit. NONVOLATILE MEMORY BKSEL Pin The BUF22821 has 16x rewrite capability of the nonvolatile memory. Additionally, the BUF22821 has the ability to store two distinct gamma curves in two different nonvolatile memory banks, each of which has 16x rewrite capability. One of the two available banks is selected using the external input pin, BKSEL. When this pin is low, BANK0 is selected; when this pin is high, BANK1 is selected. When the BKSEL pin changes state, the BUF22821 acquires the last programmed DAC/VCOM values from the nonvolatile memory associated with this newly chosen bank. At power-up, the state of the BKSEL pin determines which memory bank is selected. Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com The I2C master also has the ability to update (acquire) the DAC registers with the last programmed nonvolatile memory values using software control. The bank to be acquired depends on the state of BKSEL. Approximately 36μs (±4μs) after issuing this command, the specified DAC/VCOM register and DAC/VCOM output voltage change to the appropriate OTP memory value. MaxBank General Acquire Command A general acquire command is used to update all registers and DAC/VCOM outputs to the last programmed values stored in nonvolatile memory. A single-channel acquire command updates only the register and DAC/VCOM output of the DAC/VCOM corresponding to the DAC/VCOM address used in the single-channel acquire command. The sequence to initiate a general channel acquire is as follows: 1. Be sure BKSEL is in its desired state and has been stable for at least 1ms. 2. Send a START condition on the bus. 3. Send the appropriate device address (based on A0) and the read/write bit = LOW. The BUF22821 acknowledges this byte. 4. Send a DAC/VCOM pointer address byte. Set bit D7 = 1 and D6 = 0. Bits D5–D0 are any valid DAC/VCOM address. Only addresses 000000 to 010111 are valid and are acknowledged. See Table 5 for valid DAC/VCOM addresses. 5. Send a STOP condition on the bus. Approximately 750μs (±80μs) after issuing this command, all DAC/VCOM registers and DAC/VCOM output voltages change to the respective, appropriate nonvolatile memory values. Single-Channel Acquire Command The sequence to initiate a single-channel acquire is as follows: 1. Be sure BKSEL is in its desired state and has been stable for at least 1ms. 2. Send a START condition on the bus. 3. Send the device address (based on A0) and read/write bit = LOW. The BUF22821 acknowledges this byte. 4. Send a DAC/VCOM pointer address byte using the DAC/VCOM address corresponding to the output and register to update with the OTP memory value. Set bit D7 = 0 and D6 = 1. Bits D5–D0 are the DAC/VCOM address. Only addresses 000000 to 010111 are valid and are acknowledged. See Table 5 for valid DAC/VCOM addresses. 5. Send a STOP condition on the bus. Copyright © 2007–2011, Texas Instruments Incorporated The BUF22821 can provide the user with the number of times the nonvolatile memory of a particular DAC/VCOM channel nonvolatile memory has been written to for the current memory bank. This information is provided by reading the register at pointer address 111111. There are two ways to update the MaxBank register: 1. After initiating a single-acquire comand, the BUF22821 updates the MaxBank register with a code corresponding to how many times that particular channel memory has been written to. 2. Following a general-acquire command, the BUF22821 updates the MaxBank register with a code corresponding to the maximum number of times the most used channel (OUT1–22 and VCOMs) has been written to. MaxBank is a read-only register and is only updated by performing a general- or single-channel acquire. Table 3 shows the relationship between the number of times the nonvolatile memory has been programmed and the corresponding state of the MaxBank Register. Table 3. MaxBank Details TIMES WRITTEN TO RETURNS CODE 0 0000 1 0000 2 0001 3 0010 4 0011 5 0100 6 0101 7 0110 8 0111 9 1000 10 1001 11 1010 12 1011 13 1100 14 1101 15 1110 16 1111 11 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 Parity Error Correction The BUF22821 provides single-bit parity error correction for data stored in the nonvolatile memory to provide increased reliability of the nonvolatile memory. Should a single bit of nonvolatile memory for a channel fail, the BUF22821 corrects for it and updates the appropriate DAC with the intended value when its memory is acquired. Should more than one bit of nonvolatile memory for a channel fail, the BUF22821 does not correct for it, and updates the appropriate DAC/VCOM with the default value of 1000000000. DIE_ID AND DIE_REV REGISTERS The user can verify the presence of the BUF22821 in the system by reading from address 111101. The BUF22821 returns 0101100100100101 when read at this address. The user can also determine the die revision of the BUF22821 by reading from register 111100. The BUF22821 returns 0000000000000000 when a RevA die is present. RevB would be designated by 0000000000000001 and so on. READ/WRITE OPERATIONS Read and write operations can be done for a single DAC/VCOM or for multiple DACs/VCOMs. Writing to a DAC/VCOM register differs from writing to the nonvolatile memory. Bits D15–D14 of the most significant byte of data determines if data are written to the DAC/VCOM register or the nonvolatile memory. Read/Write: DAC/VCOM Register (volatile memory) The BUF22821 is able to read from a single DAC/VCOM, or multiple DACs/VCOMs, or write to the register of a single DAC/VCOM, or multiple DACs/VCOMs in a single communication transaction. DAC pointer addresses begin with 000000 (which corresponds to OUT1) through 010111 (which corresponds to OUT22). Write commands are performed by setting the read/write bit LOW. Setting the read/write bit HIGH performs a read transaction. Writing: DAC/VCOM Register (volatile memory) To write to a single DAC/VCOM register: 1. Send a START condition on the bus. 2. Send the device address and read/write bit = LOW. The BUF22821 acknowledges this byte. 3. Send a DAC/VCOM pointer address byte. Set bit D7 = 0 and D6 = 0. Bits D5–D0 are the DAC/VCOM address. Only addresses 000000 to 010111 are valid and are acknowledged; see Table 5 for valid addresses. 12 www.ti.com 4. Send two bytes of data for the specified register. Begin by sending the most significant byte first (bits D15–D8, of which only bits D9 and D8 are used, and bits D15–D14 must not be 01), followed by the least significant byte (bits D7–D0). The register is updated after receiving the second byte. 5. Send a STOP or START condition on the bus. The BUF22821 acknowledges each data byte. If the master terminates communication early by sending a STOP or START condition on the bus, the specified register is not updated. Updating the DAC/VCOM register is not the same as updating the DAC/VCOM output voltage; see the Output Latch section. The process of updating multiple DAC/VCOM registers begins the same as when updating a single register. However, instead of sending a STOP condition after writing the addressed register, the master continues to send data for the next register. The BUF22821 automatically and sequentially steps through subsequent registers as additional data are sent. The process continues until all desired registers have been updated or a STOP or START condition is sent. To write to multiple DAC/VCOM registers: 1. Send a START condition on the bus. 2. Send the device address and read/write bit = LOW. The BUF22821 acknowledges this byte. 3. Send either the OUT1 pointer address byte to start at the first DAC, or send the pointer address byte for whichever DAC/VCOM is the first in the sequence of DACs/VCOMs to be updated. The BUF22821 begins with this DAC/VCOM and steps through subsequent DACs/VCOMs in sequential order. 4. Send the bytes of data; begin by sending the most significant byte (bits D15–D8, of which only bits D9 and D8 have meaning, and bits D15–D14 must not be 01), followed by the least significant byte (bits D7–D0). The first two bytes are for the DAC/VCOM addressed in the previous step. The DAC/VCOM register is automatically updated after receiving the second byte. The next two bytes are for the following DAC/VCOM. That DAC/VCOM register is updated after receiving the fourth byte. This process continues until the registers of all following DACs/VCOMs have been updated. 5. Send a STOP or START condition on the bus. The BUF22821 acknowledges each byte. To terminate communication, send a STOP or START condition on the bus. Only DAC registers that have received both bytes of data are updated. Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 www.ti.com Reading: DAC/VCOM/OTHER Register (volatile memory) Reading a register returns the data stored in that DAC/VCOM/OTHER register. To read a single DAC/VCOM/OTHER register: 1. Send a START condition on the bus. 2. Send the device address and read/write bit = LOW. The BUF22821 acknowledges this byte. 3. Send the DAC/VCOM/OTHER pointer address byte. Set bit D7 = 0 and D6 = 0; bits D5–D0 are the DAC/VCOM/OTHER address. Only addresses 000000–010111, 111100, 111101, and 111111 are valid and are acknowledged. 4. Send a START or STOP/START condition. 5. Send the correct device address and read/write bit = HIGH. The BUF22821 acknowledges this byte. 6. Receive two bytes of data. They are for the specified register. The most significant byte (bits D15–D8) is received first; next is the least significant byte (bits D7–D0). In the case of DAC/VCOM channels, bits D15–D10 have no meaning. 7. Acknowledge after receiving the first byte. 8. Send a STOP or START condition on the bus or do not acknowledge the second byte to end the read transaction. Communication may be terminated by sending a premature STOP or START condition on the bus, or by not acknowledging. To read multiple registers: 1. Send a START condition on the bus. 2. Send the device address and read/write bit = LOW. The BUF22821 acknowledges this byte. 3. Send either the OUT1 pointer address byte to start at the first DAC, or send the pointer address byte for whichever register is the first in the sequence of DACs/VCOMs to be read. The BUF22821 begins with this DAC/VCOM and steps through subsequent DACs/VCOMs in sequential order. 4. Send a START or STOP/START condition on the bus. 5. Send the correct device address and read/write bit = HIGH. The BUF22821 acknowledges this byte. 6. Receive two bytes of data. They are for the specified DAC/VCOM. The first received byte is the most significant byte (bits D15–D8, only bits D9 and D8 have meaning), next is the least significant byte (bits D7–D0). Copyright © 2007–2011, Texas Instruments Incorporated SBOS399D – JUNE 2007 – REVISED JULY 2011 7. Acknowledge after receiving each byte of data. 8. When all desired DACs have been read, send a STOP or START condition on the bus. Communication may be terminated by sending a premature STOP or START condition on the bus, or by not sending the acknowledge bit. The reading of registers DieID, DieRev, and MaxBank is not supported in this mode of operation (they must be read using the single register read method). Write: Nonvolatile Memory for the DAC Register The BUF22821 is able to write to the nonvolatile memory of a single DAC/VCOM in a single communication transaction. In contrast to the BUF20820, writing to multiple nonvolatile memory words in a single transaction is not supported. Valid DAC/VCOM pointer addresses begin with 000000 (which corresponds to OUT1) through 010111 (which corresponds to OUT22). When programming the nonvolatile memory, the analog supply voltage must be between 9V and 20V. Write commands are performed by setting the read/write bit LOW. To write to a single nonvolatile register: 1. Send a START condition on the bus. 2. Send the device address and read/write bit = LOW. The BUF22821 acknowledges this byte. Only addresses 000000 to 010111 are valid and are acknowledged. See Table 5 for DAC/VCOM addresses. 3. Send a DAC/VCOM pointer address byte. Set bit D7 = 0 and D6 = 0. Bits D5–D0 are the DAC/VCOM address. 4. Send two bytes of data for the nonvolatile register of the specified DAC/VCOM. Begin by sending the most significant byte first (bits D15–D8, of which only bits D9 and D8 are data bits, and bits D15–D14 must be 01), followed by the least significant byte (bits D7–D0). The register is updated after receiving the second byte. 5. Send a STOP condition on the bus. The BUF22821 acknowledges each data byte. If the master terminates communication early by sending a STOP or START condition on the bus, the specified nonvolatile register is not updated. Writing a nonvolatile register also updates the DAC/VCOM register and output voltage. 13 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com The DAC/VCOM register and DAC/VCOM output voltage are updated immediately, while the programming of the nonvolatile memory takes up to 250μs. Once a nonvolatile register write command has been issued, no communication with the BUF22821 should take place for at least 250μs. Writing or reading over the serial interface while the nonvolatile memory is being written jeopardizes the integrity of the data being stored. Read: Nonvolatile Memory for the DAC Register To read the data present in nonvolatile register for a particular DAC/VCOM channel, the master must first issue a general-acquire command, or a single-acquire command with the appropriate DAC/VCOM channel chosen. This action updates both the DAC/VCOM register(s) and DAC/VCOM output voltage(s). The master may then read from the appropriate DAC/VCOM register as described earlier. Table 4. Other Register Pointer Addresses REGISTER POINTER ADDRESS Die_Rev 111100 Die_ID 111101 MaxBank 111111 Table 5. DAC Register Pointer Addresses 14 REGISTER POINTER ADDRESS OUT1 000000 OUT2 000001 OUT3 000010 OUT4 000011 OUT5 000100 OUT6 000101 OUT7 000110 OUT8 000111 OUT9 001000 OUT10 001001 OUT11 001010 OUT12 001011 OUT13 001100 OUT14 001101 OUT15 001110 OUT16 001111 OUT17 010000 OUT18 010001 VCOM1 010010 VCOM2 010011 OUT19 010100 OUT20 010101 OUT21 010110 OUT22 010111 Copyright © 2007–2011, Texas Instruments Incorporated Figure 13. Write DAC Register Timing Copyright © 2007–2011, Texas Instruments Incorporated A6 A6 A6 SDA_In Start Device_Out SCL A4 A3 A3 A2 A2 A1 A1 A5 A5 A4 A4 A5 A5 A4 A4 A3 A3 Device Address A2 A2 A5 A5 A4 A4 A3 A3 Device Address A2 A2 A1 A1 A1 A1 A3 A3 Device Address A2 A0 A0 A0 A0 A2 A1 W W Write W W Write A1 Ackn Ackn Ackn W D7 W D7 D7 D7 Read operation. Ackn Ackn Ackn W W Write Read operation. A0 A0 A0 A0 Write D7 D7 D7 D7 D5 D5 D6 D6 D5 D5 D5 D5 P4 P4 P3 P3 P2 P2 P4 D6 D6 D5 D5 P4 P4 P3 P3 P2 P2 P1 P1 P1 P1 P4 Start DAC address pointer. D7-D5 must be 000. D6 D6 P4 P4 P3 P3 P2 P2 P0 P0 P0 P0 P3 P3 Ackn Ackn Ackn Ackn Ackn Ackn P2 P2 P1 P1 P1 P1 Start Start DAC address pointer. D7-D5 must be 000. D6 D6 DAC address pointer. D7-D5 must be 000. DAC address pointer. D7-D5 must be 000. Ackn Ackn Ackn Write Operation Ackn Ackn Ackn Write Operation D14 D14 D15 D14 D14 A3 A3 A4 A3 A3 Device Address A4 D14 D14 D15 D13 D13 D11 D11 D10 D10 D13 D13 D12 D12 D11 D11 D10 D10 DAC (pointer) MSbyte. D14 must be 0. Device Address A4 D12 D12 D9 D9 D8 D8 Ackn Ackn D7 D7 D9 D9 D8 D8 Ackn Ackn Ackn D7 D7 A2 A2 A2 A2 A1 A1 A1 A1 A0 A0 A0 A0 D12 D12 D11 D11 D10 D10 D9 D9 D8 D8 R R Read R R Ackn Ackn Ackn Ackn Ackn Ackn Ackn D7 D7 D15 D15 D15 D11 D11 D10 D10 D9 D9 D6 D6 D6 D6 D8 D8 D13 D12 D12 D11 D11 D10 D10 D14 D6 D6 D14 D13 D5 D5 D13 D12 D11 D11 D4 D4 D3 D3 DAC 20 LSbyte. D12 D10 D2 D2 D10 D4 D4 D3 D3 DAC LSbyte D9 D9 Ackn Ackn Ackn D5 D5 D9 D1 D1 D9 D0 D0 D8 D8 D8 D8 D4 D4 Ackn D1 D1 D0 D0 Ackn Ackn Ackn D2 D1 D1 D0 D0 Ackn Ackn D7 D7 D6 D6 D5 D5 D5 D5 D4 D4 D2 D2 D4 D4 D3 D3 DAC LSbyte. D3 D3 DAC 20 LSbyte is updated in this moment. Stop D2 D2 D1 D1 D15 D15 D1 D1 D14 D14 D0 D0 D0 D0 Stop Stop No Ackn No Ackn Ackn Ackn Ackn D13 D13 DAC (pointer + 1) MSbyte. D14 must be 0. The whole DAC register D9-D0 D2 Ackn is updated in this moment. The whole DAC register D9-D0 D2 D2 Stop D6 D6 Ackn Ackn Ackn Ackn Ackn Ackn Ackn Ackn D7 D7 D3 D3 DAC (pointer) LSbyte D5 D5 DAC (pointer) MSbyte. D15-D10 have no meaning. D14 D13 DAC MSbyte. D15-D10 have no meaning. D14 D12 D13 D15 D12 D13 Ackn Ackn D14 D15 Read D14 D15 DAC 20 (VCOM OUT2) MSbyte. D14 must be 0. If D15 = 1, all DACs are updated when the current DAC register is updated. D15 A4 D13 D13 Ackn If D15 = 1, all DACs are updated when the current DAC register is updated. D15 D15 DAC MSbyte. D14 must be 0. DAC 20 (VCOM OUT2) MSbyte. D15-D10 have no meaning. A5 A5 A5 A5 Ackn Ackn Ackn Ackn Ackn D15 A6 A6 A6 A6 P0 P0 P0 P0 Ackn www.ti.com Read multiple DAC registers. P4-P0 specify DAC address. A6 SDA_In Start Device_Out SCL A5 A4 Read single DAC register. P4-P0 specify DAC address. A6 A6 SDA_In Start Device_Out SCL A6 Device_Out A5 Device Address Write multiple DAC register. P4-P0 specify DAC address. A6 SDA_In SCL Start Write single DAC register. P4-P0 specify DAC address. BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 Figure 14. Read Register Timing 15 16 A6 A6 SDA_In Device_Out SCL Start A5 A5 A4 A4 A3 A3 Device Address Figure 15. Write Nonvolatile Register Timing A1 A0 W W Ackn Ackn D6 D6 D5 D5 P4 P4 P3 P3 P2 P2 A5 A5 A4 A4 A3 A3 Device address. A2 A2 A1 A1 P1 A0 A0 P1 A6 A6 SDA_In Device_Out Start A5 A5 A4 A4 A3 A3 Device address. A2 A2 A1 A1 A0 A0 P0 W W Write W W Ackn Ackn Ackn D15 D15 D7 D7 Ackn Ackn Ackn D7 D7 Write Operation Ackn Ackn Ackn Write Operation P0 Write Single channel acquire command. P4-P0 must specify and valid DAC address. A6 Start Device_Out SCL D7 D7 DAC address pointer. D7-D0 must be 000. General acquire command. P4-P0 must specify and valid DAC address. A0 Ackn Write operation. A6 SCL A1 Write SDA_In A2 A2 Write single OTP register. P4-P0 specify DAC address. D14 D13 D13 D12 D12 D11 D11 D10 D10 D9 D9 D5 P4 P4 P3 P3 P2 P2 D6 D6 D5 D5 P4 P4 P3 P3 P2 P2 DAC address pointer. D7-D5 must be 010. D6 D5 DAC address pointer. D7-D5 must be 100. D6 D14 DAC MSbyte. D15-D14 must be 01. D8 P1 P1 P1 P1 D8 P0 P0 P0 P0 Ackn Ackn Ackn D7 D6 D6 Ackn Ackn Ackn Ackn Ackn Ackn D7 D5 Stop Stop D5 D4 D4 D2 D2 D1 D1 D0 D0 Ackn Ackn Ackn t2 Stop t2: minimum 100ms, maximum 2ms. The OTP register (D9-D0) is updated in this moment. t1: > 20ms before falling edge of clock. D3 D3 DAC LSbyte. Write supply active. Write signal active. t1 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com Figure 16. Acquire Operation Timing Copyright © 2007–2011, Texas Instruments Incorporated Figure 17. General-Call Reset Timing Copyright © 2007–2011, Texas Instruments Incorporated Start High-Speed Command Address Byte = 00h Address Byte = 00001xxx (HS Master Code) Ackn Ackn Device enters high-speed mode at ACK clock pulse. Device exits high-speed mode with stop condition. No Ackn Device begins reset at arrow and is in reset until ACK clock pulse. Then the device acquires memory, etc as at power-up. Address Byte = 06h www.ti.com SDA SCL SDA SCL Start General-Call Reset Command BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 Figure 18. High-Speed Mode Timing 17 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com STATIC GAMMA CHANNELS DYNAMIC GAMMA CONTROL The BUF22821 offers two static gamma buffers. These two analog signal paths can be used to provide additional gamma channels. The STATOUTH pin is a buffered version of the STATINH pin. The STATOUTL pin is a buffered version of the STATINL pin. For typical output swing, see the Typical Characteristics. Dynamic gamma control is a technique used to improve the picture quality in LCD television applications. This technique typically requires switching gamma curves between frames. Using the BKSEL pin to switch between two gamma curves will not likely lead to good results because of the 750μs it takes to transfer the data from the nonvolatile memory to the DAC register. However, dynamic gamma control can still be accomplished by storing two gamma curves in an external EEPROM and writing directly to the DAC register (volatile). END-USER SELECTED GAMMA CONTROL Because the BUF22821 has two banks of nonvolatile memory, it is well-suited for providing two levels of gamma control by using the BKSEL pin, as shown in Figure 19. When the state of the BKSEL pin changes, the BUF22821 updates all 24 programmable buffer outputs simultaneously after 750μs (±80μs). To update all 24 programmable output voltages simultaneously via hardware: Toggle the BKSEL pin to switch between Gamma Curve 0 (stored in Bank0) and Gamma Curve 1 (stored in Bank1). All DAC/VCOM registers and output voltages are updated simultaneously after approximately 750μs. 5V The double register input structure saves programming time by allowing updated DAC values to be pre-stored into the first register bank. Storage of this data can occur while a picture is still being displayed. Because the data are only stored into the first register bank, the DAC/VCOM output values remain unchanged—the display is unaffected. At the beginning or the end of a picture frame, the DAC/VCOM outputs (and therefore, the gamma voltages) can be quickly updated by writing a '1' in bit 15 of any DAC/VCOM register. For details on the operation of the double register input structure, see the Updating the DAC Outputs section. To update all 24 programmable output voltages simultaneously via software: BUF22821 BKSEL STEP 1: Write to registers 1–24 with bit 15 always '0'. STEP 2: Write any DAC/VCOM register a second time with identical data. Make sure that bit 15 is set to '1'. All DAC/VCOM channels are updated simultaneously after receiving the last bit of data. OUT1 Change in Output Voltages BANK0 BANK1 Switch OUT22 2 IC Figure 19. Gamma Control 18 Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com GENERAL POWERPAD DESIGN CONSIDERATIONS The BUF22821 is available in a thermally-enhanced PowerPAD package. This package is constructed using a downset leadframe upon which the die is mounted, see Figure 20(a) and Figure 20(b). This arrangement results in the lead frame being exposed as a thermal pad on the underside of the package; see Figure 20(c). This thermal pad has direct thermal contact with the die; thus, excellent thermal performance is achieved by providing a good thermal path away from the thermal pad. 3. The PowerPAD package allows for both assembly and thermal management in one manufacturing operation. During the surface-mount solder operation (when the leads are being soldered), the thermal pad must be soldered to a copper area underneath the package. Through the use of thermal paths within this copper area, heat can be conducted away from the package into either a ground plane or other heat-dissipating device. Soldering the PowerPAD to the printed circuit board (PCB) is always required, even with applications that have low power dissipation. This provides the necessary thermal and mechanical connection between the lead frame die pad and the PCB. 5. The PowerPAD must be connected to the most negative supply voltage on the device, GNDA and GNDD. 1. Prepare the PCB with a top-side etch pattern. There should be etching for the leads as well as etch for the thermal pad. 2. Place recommended holes in the area of the thermal pad. Ideal thermal land size and thermal via patterns for the HTSSOP-38 DCP package can be seen in the technical brief, PowerPAD Thermally-Enhanced Package (SLMA002), available for download at www.ti.com. These holes should be 13 mils in diameter. Keep them small, so that solder wicking through the holes is not a problem during reflow. An example thermal Copyright © 2007–2011, Texas Instruments Incorporated 4. 6. 7. 8. land pattern mechanical drawing is attached to the end of this data sheet. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. This helps dissipate the heat generated by the BUF22821 IC. These additional vias may be larger than the 13-mil diameter vias directly under the thermal pad. They can be larger because they are not in the thermal pad area to be soldered; thus, wicking is not a problem. Connect all holes to the internal plane that is at the same voltage potential as the GND pins. When connecting these holes to the internal plane, do not use the typical web or spoke via connection methodology. Web connections have a high thermal resistance connection that is useful for slowing the heat transfer during soldering operations. This makes the soldering of vias that have plane connections easier. In this application, however, low thermal resistance is desired for the most efficient heat transfer. Therefore, the holes under the BUF22821 PowerPAD package should make their connection to the internal plane with a complete connection around the entire circumference of the plated-through hole. The top-side solder mask should leave the terminals of the package and the thermal pad area with its twelve holes exposed. The bottom-side solder mask should cover the holes of the thermal pad area. This masking prevents solder from being pulled away from the thermal pad area during the reflow process. Apply solder paste to the exposed thermal pad area and all of the IC terminals. With these preparatory steps in place, the BUF22821 IC is simply placed in position and run through the solder reflow operation as any standard surfacemount component. This preparation results in a properly installed part. 19 BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com DIE Side View (a) Thermal Pad DIE End View (b) Bottom View (c) Figure 20. Views of Thermally-Enhanced DCP Package ( ) (2) Where: PD = maximum power dissipation (W) TMAX = absolute maximum junction temperature (+125°C) TA = free-ambient air temperature (°C) 5.0 Maximum Power Dissipation (W) For a given θJA (listed in the Electrical Characteristics table), the maximum power dissipation is shown in Figure 21, and is calculated by Equation 2: TMAX - TA PD = qJA 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 100 TA, Free-Air Temperature (°C) Figure 21. Maximum Power Dissipation vs Free-Air Temperature (with PowerPAD soldered down) 20 Copyright © 2007–2011, Texas Instruments Incorporated BUF22821 SBOS399D – JUNE 2007 – REVISED JULY 2011 www.ti.com REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (May, 2009) to Revision D • Page Corrected error in x-axis value for Figure 11 ........................................................................................................................ 7 Changes from Revision B (February, 2008) to Revision C Page • Updated Figure 5 to reflect specified temperature range ..................................................................................................... 6 • Updated Figure 6 to reflect specified temperature range ..................................................................................................... 6 • Updated Figure 7 to reflect specified temperature range ..................................................................................................... 7 • Changed title of Figure 8 ...................................................................................................................................................... 7 • Changed title of Figure 9 ...................................................................................................................................................... 7 Copyright © 2007–2011, Texas Instruments Incorporated 21 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) BUF22821AIDCPR ACTIVE HTSSOP DCP 38 2000 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 95 BUF22821 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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BUF22821AIDCPR
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  • 1+63.24250
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