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CC2592
SWRS159 – FEBRUARY 2014
CC2592 2.4-GHz Range Extender
1 Introduction
1.1
Features
1
• Seamless Interface to 2.4-GHz Low-Power RF
Devices from Texas Instruments
• +22-dBm Output Power
• 3-dB Typical Improved Sensitivity on CC2520,
CC253X, and CC85XX
• Very Few External Components
– Integrated Switches
– Integrated Matching Network
– Integrated Balun
– Integrated Inductors
– Integrated PA
– Integrated LNA
1.2
•
•
•
•
Applications
All 2.4-GHz ISM Band Systems
Wireless Sensor Networks
Wireless Industrial Systems
IEEE 802.15.4 and ZigBee® Metering Systems
1.3
• Digital Control of LNA Gain by HGM Terminal
• 100 nA in Power Down (LNA_EN = PA_EN = 0)
• Low-Transmit Current Consumption
– 155 mA at 3 V for +22 dBm, PAE = 34%
• Low-Receive Current Consumption
– 4.0-mA for High-Gain Mode
– 1.9-mA for Low-Gain Mode
• 4.7-dB LNA Noise Figure, Including T/R Switch
and External Antenna Match
• RoHS Compliant 4-mm × 4-mm QFN-16 Package
• 2.0-V to 3.7-V Operation
• –40°C to +125°C Operation
•
•
•
IEEE 802.15.4 and ZigBee Gateways
Wireless Consumer Systems
Wireless Audio Systems
Description
The CC2592 device is a cost-effective and high-performance RF front end for low-power and low-voltage
2.4-GHz wireless applications.
The CC2592 device is a range extender for all CC25XX 2.4-GHz low-power RF transceivers, transmitters,
and system-on-chip products from Texas Instruments.
To increase the link budget, the CC2592 device provides a power amplifier for increased output power
and an LNA with a low-noise figure for improved receiver sensitivity.
The CC2592 device provides a very small size, high-output power RF design with its 4-mm × 4-mm QFN16 package.
The CC2592 device contains PA, LNA, switches, RF-matching, and balun for simple design of highperformance wireless applications.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2592
SWRS159 – FEBRUARY 2014
1.4
www.ti.com
Functional Block Diagram
Figure 1-1 shows a simplified block diagram of the CC2592 device.
VDD_LNA
VDD_PA VDD_BIAS
ANT
PA
PREAMP
EN
BALUN
RF_P
EN
RF_N
LNA
EN
PA_EN
BIAS
LOGIC
BIAS
LNA_EN
HGM
Figure 1-1. CC2592 Simplified Block Diagram
2
Introduction
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SWRS159 – FEBRUARY 2014
Revision History
Date
Literature Number
Changes
February 2014
SWRS159
Initial release
Introduction
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CC2592
SWRS159 – FEBRUARY 2014
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2 Device Characteristics
2.1
Absolute Maximum Ratings
Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values
may cause permanent damage to the device.
Parameter
Conditions
Supply voltage
All supply terminals must have the same voltage
Voltage on any digital terminal
Input RF level
2.2
Value
Unit
–0.3 to 3.8
V
–0.3 to VDD+0.3, max 3.8
V
+10
dBm
Handling Ratings
Under no circumstances must the handling ratings be violated. Stress exceeding one or more of the limiting values may
cause permanent damage to the device.
Parameter
Conditions
Value
Unit
–50 to 150
°C
Human Body Model
2000
V
Charge Device Model
1000
V
Storage temperature range
ESD
2.3
Recommended Operating Conditions
The operating conditions for the CC2592 device are listed below.
Parameter
Min
Max
Unit
Ambient temperature range
–40
125
°C
Operating supply voltage
2.0
3.7
V
2400
2483.5
MHz
Operating frequency range
4
Conditions
Device Characteristics
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2.4
SWRS159 – FEBRUARY 2014
Electrical Characteristics
Tc = 25°C, VDD = 3.0 V, fRF = 2440 MHz (unless otherwise noted). Measured on CC2592EM reference design including
external matching components.
Parameter
Test Conditions
Receive current, high-gain mode
HGM = 1
Receive current, low-gain mode
Min
Typ
Max
Unit
4
mA
HGM = 0
1.9
mA
POUT = 20 dBm
123
POUT = 22 dBm
155
Transmit current
No input signal
50
Power down current
EN = 0
High-input level (control terminals)
PA_EN, LNA_EN, HGM
Low-input level (control terminals)
PA_EN, LNA_EN, HGM
Transmit current
0.1
1.3
mA
mA
0.3
µA
Vdd
V
0.3
V
Power down - Receive mode switching
time
1
µs
Power down - Transmit mode switching
time
1
µs
RF Receive
Gain, high-gain mode
HGM = 1
11
dB
Gain, low-gain mode
HGM = 0
6
dB
Gain variation over frequency
2400 to 2483.5 MHz, HGM = 1
2
dB
Gain variation over power supply
2.0 V to 3.7 V, HGM = 1
1.5
dB
Gain variation over temperature
–40°C to 85°C, HGM = 1
1.7
dB
Gain variation over temperature
85°C to 125°C, HGM = 1
1
dB
Noise figure, high-gain mode
HGM = 1, including internal T/R
switch and external antenna match
4.7
dB
Input 1-dB compression, high-gain mode
HGM = 1
–18
dBm
Input IP3, high-gain mode
HGM = 1
–9
dBm
Input reflection coefficient, S11
HGM = 1, measured at antenna port
–15
dB
24
dB
PIN = 0.0 dBm
20.3
PIN = 4.0 dBm
21.9
POUT = 22 dBm
34
%
15
dBm
RF Transmit
Gain
Output power, POUT
Power added efficiency, PAE
Output 1-dB compression
Output power variation over frequency
0.5
dB
Output power variation over power supply 2.0 V to 3.7 V, PIN = 4 dBm
3.8
dB
Output power variation over temperature
–40°C to 125°C, PIN = 4 dBm
1.7
Second harmonic power
FCC requirement
–41.2
dBm
Third harmonic power
FCC requirement
–41.2
dBm
VSWR
2400 to 2483.5 MHz, PIN = 4 dBm
dBm
No damage
20:1
Stability
7.5:1
dB
Device Characteristics
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CC2592
SWRS159 – FEBRUARY 2014
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3 Device Information
3.1
Terminal and I/O Configuration
GND
VDD_PA
VDD_BIAS
VDD_LNA
Figure 3-1 and Table 3-1, provide the terminal layout and description for the CC2592 device.
16
15
14
13
GND
1
12
GND
RF_N
2
11
GND
QFN-16 4x4mm
GND
4
9
GND
5
6
7
8
BIAS
ANT
HGM
10
LNA_EN
3
PA_EN
RF_P
Figure 3-1. Terminal Top View
6
Device Information
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SWRS159 – FEBRUARY 2014
Table 3-1. Terminal Functions
Terminal
Type
Description
No.
Name
–
GND
Ground
The exposed die attach pad must be connected to a solid ground
plane. See CC2592EM reference design for the recommended layout.
1, 4, 9, 11, 12, 16
GND
Ground
Ground connections. Only terminals 9, 11, and 12 should be shorted
to the die attach pad on the top PCB layer.
2
RF_N
RF
RF interface toward CC25xx device
3
RF_P
RF
RF interface toward CC25xx device
5
PA_EN
Digital input
Digital control terminal. See Table 9-1 for details.
6
LNA_EN
Digital input
Digital control terminal. See Table 9-1 or details.
7
HGM
Digital input
Digital control terminal
HGM = 1 → Device in High Gain Mode
HGM = 0 → Device in Low Gain Mode
8
BIAS
Analog
Biasing input. Resistor between this node and ground sets bias
current for PA and LNA.
10
ANT
RF
13
VDD_LNA
Power
Antenna interface
2.0- to 3.7-V power
14
VDD_BIAS
Power
2.0- to 3.7-V power
15
VDD_PA
Power
2.0- to 3.7-V power
Device Information
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CC2592
SWRS159 – FEBRUARY 2014
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4 Sensitivity Improvement Example
CC2592
CC2520
NF = 4.7 dB
NF = 8 dB
Gain = 11 dB
Figure 4-1.
The noise factor of a system consisting of the CC2592 device and a CC2520 device, as seen in Figure 41 is given by:
4.7
F
8
F 1
1010 1
F1 2
10 10
11
G1
1010
The noise figure is:
NF 10log(F) 10log(3.37)
3.37
(1)
5.28 dB
(2)
The noise figure is reduced from 8 dB for the CC2520 standalone to 5.28 dB for the CC2592 and CC2520
device combination, leading to a 2.72-dB theoretical improvement in sensitivity.
In practice, tests on the CC2592 and CC25XX devices show around 3-dB improvement in sensitivity. For
the CC2538 and CC2592 devices, the improvement is almost 4 dB (approximately –97 dBm to –101 dBm)
8
Sensitivity Improvement Example
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SWRS159 – FEBRUARY 2014
5 CC2592EM Evaluation Module
Figure 5-1 shows an evaluation module circuit of the CC2592 device.
VDD
VDD
C151
C131
C106
L101
VDD_PA
C107
VDD_LNA
C108
VDD_BIAS
VDD
LDB182G4520C-110
RF_P
RF_P
RF_P
Balun
RXTX
RXTX
SMA
C109
L103
L102
C103
RF_N
RF_N
PA_EN
PA_EN
LNA_EN
LNA_EN
C101
BIAS
C105
C152
RF_N
CC2592
ANT
SMA
C21
HGM
HGM
R81
Figure 5-1. CC2592 Evaluation Module
Table 5-1 lists the materials in the CC2592 evaluation module circuit.
Table 5-1. List of Materials
Device
Function
Value
L101
PA bias inductor
4.7 nH, Multilayer chip inductor
L102
Part of antenna match
1 nH, Multilayer chip inductor
L103
Part of antenna match
1.8 nH, Multilayer chip inductor
C101
Part of antenna match
2.2-pF 0402 Chip capacitor
C103
Part of antenna match
2.2-pF 0402 Chip capacitor
C105
Part of antenna match
0.1-pF 0402 Chip capacitor
C106
Decoupling
12-pF 0402 Chip capacitor
C107
Decoupling
1-nF 0402 Chip capacitor
C108
Decoupling
1-µF 0402 Chip capacitor
C109
DC block
18-pF 0402 Chip capacitor
C21
Balun matching capacitor
0.2-pF 0402 Chip capacitor
C152
Balun matching capacitor
0.3-pF 0402 Chip capacitor
C131
Decoupling
1-nF 0402 Chip capacitor
C151
Decoupling
12-pF 0402 Chip capacitor
R81
Bias resistor
3.9 kΩ, 0402 resistor
CC2592EM Evaluation Module
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CC2592
SWRS159 – FEBRUARY 2014
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6 Typical Characteristics
spacer
12
5.1
11
11
5.0
10
10
4.9
9
4.8
8
4.7
7
4.6
6
4.5
5
4.4
5
4
4.3
2400 2410 2420 2430 2440 2450 2460 2470 2480 2490
4
7
6
5
4
80
100
Temperature (C)
180
28
160
24
140
20
120
16
100
12
80
8
60
Pout
PAE
Ivdd
±8
±4
Input Power (dBm)
0
4
40
3.8
C002
34
180
170
32
160
30
150
28
140
26
130
24
120
22
110
20
100
C007
36
180
34
170
32
160
30
150
28
140
26
130
24
120
22
110
Pout
PAE
Ivdd
20
18
20
8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
Power Supply (V)
C004
Figure 5. Output Power, PAE, and Current Consumption Versus
Input Power
10
3.6
Frequency (MHz)
Current Consumption (mA)
Output Power (dBm) and PAE (%)
200
32
±12
3.4
Figure 4. Output Power, PAE, and Current Consumption Versus
Frequency
Input Power Level = +4 dBm
36
0
3.2
Pout
PAE
Ivdd
C001
Figure 3. LNA Gain Versus Temperature
4
3.0
18
90
2400 2410 2420 2430 2440 2450 2460 2470 2480 2490
120
Output Power (dBm) and PAE (%)
60
2.8
Current Consumption (mA)
Gain (dB)
8
±16
2.6
36
9
±20
2.4
Figure 2. LNA Gain Versus Power Supply
10
40
2.2
Power Supply (V)
Output Power (dBm) and PAE (%)
11
20
HGM
LGM
2.0
HGM
LGM
0
7
C003
12
±20
8
6
Figure 1. LNA Gain and Noise Figure Versus Frequency
±40
9
3.4
3.6
Current Consumption (mA)
Gain (dB)
Frequency (MHz)
Gain (dB)
HGM
LGM
NF HGM
12
Noise Figure (dB)
5.2
13
100
90
3.8
C005
Figure 6. Output Power, PAE, and Current Consumption Versus
Power Supply
Input Power Level = +4 dBm
Typical Characteristics
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160
Pout
PAE
Ivdd
34
158
32
156
30
154
28
152
26
150
24
148
22
146
20
144
18
Current Consumption (mA)
Output Power (dBm) and PAE (%)
36
142
±40
±20
0
20
40
60
80
100
Temperature (C)
120
140
C006
Figure 7. Output Power, PAE, and Current Consumption Versus Temperature
Input Power Level = +4 dBm
Typical Characteristics
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CC2592
SWRS159 – FEBRUARY 2014
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7 Controlling the Output Power from CC2592
The output power of the CC2592 device is controlled by controlling the input power. The CC2592 PA is
designed to work in compression (class AB).
Driving the CC2592 device too far into saturation might result in spurious emissions and harmonics above
regulatory limits. This caution should especially be considered for systems targeting a wide operating
temperature range, where a combination of low temperature, low supply voltage, and a transceiver that
increases output power (drive level) at low temperature, can result in high spurious emissions.
Figure 7-1 shows the maximum recommended drive level versus temperature and supply voltage.
Figure 7-1. Maximum Recommended Drive Level
8 Input Levels on Control Terminals
The three digital control terminals (PA_EN, LNA_EN, and HGM) have built-in level-shifting functionality,
meaning that if the CC2592 device operates off a 3.7-V supply voltage, the control terminals still sense
1.6- to 1.8-V signals as a logical 1. However, the input voltages should not have a logical 1 level that is
higher than the supply.
12
Input Levels on Control Terminals
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SWRS159 – FEBRUARY 2014
9 Connecting the CC2592 Device to a CC25xx Device
Table 9-1 shows the control logic for connecting CC2592 to a CC25xx device.
Table 9-1. Control Logic for Connecting CC2592 to a CC25xx Device
PA_EN
LNA_EN
HGM
0
0
X
Mode of Operation
Power Down
X
1
0
RX Low-Gain Mode
X
1
1
RX High-Gain Mode
1
0
X
TX
Figure 9-1 shows the application circuit for the CC2592 and CC253X devices.
VDD
VDD
C131
C151
C106
L101
VDD_PA
C107
VDD_LNA
C108
VDD_BIAS
VDD
RF_P
RF_P
RF_P
RF_P
RXTX
RXTX
SMA
C109
L103
RF_N
L102
CC2592
ANT
C103
PA_EN
P1.1
LNA_EN
P1.0
HGM
P0.7
CC2530
C101
BIAS
C105
RF_N
RF_N
RF_N
R81
Alternatively to
VDD/GND/MCU
Figure 9-1. Application Circuit Example for CC2530 + CC2592
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Connecting the CC2592 Device to a CC25xx Device
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CC2592
SWRS159 – FEBRUARY 2014
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10 Device and Documentation Support
10.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 10-1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
CC2592
Click here
Click here
Click here
Click here
Click here
10.2 Trademarks
ZigBee is a registered trademark of ZigBee Alliance.
10.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
10.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
14
Device and Documentation Support
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PACKAGE OPTION ADDENDUM
www.ti.com
24-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CC2592RGVR
ACTIVE
VQFN
RGV
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CC2592
CC2592RGVT
ACTIVE
VQFN
RGV
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CC2592
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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