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CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
CC2640 SimpleLink™ Bluetooth® Wireless MCU
1 Device Overview
1.1
Features
1
• Microcontroller
– Powerful ARM® Cortex®-M3
– EEMBC CoreMark® Score: 142
– Up to 48-MHz Clock Speed
– 128KB of In-System Programmable Flash
– 8KB of SRAM for Cache
– 20KB of Ultralow-Leakage SRAM
– 2-Pin cJTAG and JTAG Debugging
– Supports Over-The-Air Upgrade (OTA)
• Ultralow-Power Sensor Controller
– Can Run Autonomous From the Rest of the
System
– 16-Bit Architecture
– 2KB of Ultralow-Leakage SRAM for Code and
Data
• Efficient Code Size Architecture, Placing Drivers,
Bluetooth® Low Energy Controller, and Bootloader
in ROM
• RoHS-Compliant Packages
– 4-mm × 4-mm RSM VQFN32 (10 GPIOs)
– 5-mm × 5-mm RHB VQFN32 (15 GPIOs)
– 7-mm × 7-mm RGZ VQFN48 (31 GPIOs)
• Peripherals
– All Digital Peripheral Pins Can Be Routed to
Any GPIO
– Four General-Purpose Timer Modules
(Eight 16-Bit or Four 32-Bit Timers, PWM Each)
– 12-Bit ADC, 200-ksamples/s, 8-Channel Analog
MUX
– Continuous Time Comparator
– Ultralow-Power Analog Comparator
– Programmable Current Source
– UART
– 2× SSI (SPI, MICROWIRE, TI)
– I2C
– I2S
– Real-Time Clock (RTC)
– AES-128 Security Module
– True Random Number Generator (TRNG)
– 10, 15, or 31 GPIOs, Depending on Package
Option
– Support for Eight Capacitive-Sensing Buttons
– Integrated Temperature Sensor
• External System
– On-Chip internal DC-DC Converter
– Very Few External Components
– Seamless Integration With the SimpleLink™
CC2590 and CC2592 Range Extenders
– Pin Compatible With the SimpleLink CC13xx in
4-mm × 4-mm and 5-mm × 5-mm VQFN
Packages
• Low Power
– Wide Supply Voltage Range
• Normal Operation: 1.8 to 3.8 V
• External Regulator Mode: 1.7 to 1.95 V
– Active-Mode RX: 5.9 mA
– Active-Mode TX at 0 dBm: 6.1 mA
– Active-Mode TX at +5 dBm: 9.1 mA
– Active-Mode MCU: 61 µA/MHz
– Active-Mode MCU: 48.5 CoreMark/mA
– Active-Mode Sensor Controller: 8.2 µA/MHz
– Standby: 1 µA (RTC Running and RAM/CPU
Retention)
– Shutdown: 100 nA (Wake Up on External
Events)
• RF Section
– 2.4-GHz RF Transceiver Compatible With
Bluetooth Low Energy (BLE) 4.2 Specification
– Excellent Receiver Sensitivity (–97 dBm for
BLE), Selectivity, and Blocking Performance
– Link budget of 102 dB for BLE
– Programmable Output Power up to +5 dBm
– Single-Ended or Differential RF Interface
– Suitable for Systems Targeting Compliance With
Worldwide Radio Frequency Regulations
• ETSI EN 300 328 (Europe)
• EN 300 440 Class 2 (Europe)
• FCC CFR47 Part 15 (US)
• ARIB STD-T66 (Japan)
• Tools and Development Environment
– Full-Feature and Low-Cost Development Kits
– Multiple Reference Designs for Different RF
Configurations
– Packet Sniffer PC Software
– Sensor Controller Studio
– SmartRF™ Studio
– SmartRF Flash Programmer 2
– IAR Embedded Workbench® for ARM
– Code Composer Studio™
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
1.2
•
•
•
www.ti.com
Applications
Home and Building Automation
– Connected Appliances
– Lighting
– Locks
– Gateways
– Security Systems
Industrial
– Logistics
– Production and Manufacturing
– Automation
– Asset Tracking and Management
– Remote Display
– Cable Replacement
– HMI
– Access Control
Retail
– Beacons
– Advertising
– ESL and Price Tags
– Point of Sales and Payment Systems
1.3
•
•
•
•
Health and Medical
– Thermometers
– SpO2
– Blood Glucose and Pressure Meters
– Weight Scales
– Vitals Monitoring
– Hearing Aids
Sports and Fitness
– Activity Monitors and Fitness Trackers
– Heart Rate Monitors
– Running Sensors
– Biking Sensors
– Sports Watches
– Gym Equipment
– Team Sports Equipment
HID
– Remote Controls
– Keyboards and Mice
– Gaming
Accessories
– Toys
– Trackers
– Luggage Tags
– Wearables
Description
The CC2640 device is a wireless MCU targeting Bluetooth applications.
The device is a member of the CC26xx family of cost-effective, ultralow power, 2.4-GHz RF devices. Very
low active RF and MCU current and low-power mode current consumption provide excellent battery
lifetime and allow for operation on small coin cell batteries and in energy-harvesting applications.
The CC2640 device contains a 32-bit ARM Cortex-M3 processor that runs at 48 MHz as the main
processor and a rich peripheral feature set that includes a unique ultralow power sensor controller. This
sensor controller is ideal for interfacing external sensors and for collecting analog and digital data
autonomously while the rest of the system is in sleep mode. Thus, the CC2640 device is ideal for a wide
range of applications where long battery lifetime, small form factor, and ease of use is important.
The Bluetooth Low Energy controller is embedded into ROM and runs partly on an ARM Cortex-M0
processor. This architecture improves overall system performance and power consumption and frees up
flash memory for the application.
The Bluetooth stack is available free of charge from www.ti.com.
Device Information (1)
(1)
2
PART NUMBER
PACKAGE
BODY SIZE (NOM)
CC2640F128RGZ
VQFN (48)
7.00 mm × 7.00 mm
CC2640F128RHB
VQFN (32)
5.00 mm × 5.00 mm
CC2640F128RSM
VQFN (32)
4.00 mm × 4.00 mm
For more information, see Section 9, Mechanical Packaging and Orderable Information.
Device Overview
Copyright © 2015–2016, Texas Instruments Incorporated
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CC2640
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1.4
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
Functional Block Diagram
Figure 1-1 shows a block diagram for the CC2640.
SimpleLinkTM CC26xx wireless MCU
RF core
cJTAG
Main CPU
ROM
ARM®
Cortex®-M3
ADC
ADC
128KB
Flash
Digital PLL
DSP modem
8KB
cache
4KB
SRAM
ARM®
20KB
SRAM
Cortex®-M0
ROM
Sensor controller
General peripherals / modules
I2C
4× 32-bit Timers
UART
2× SSI (SPI, µW, TI)
Sensor controller
engine
12-bit ADC, 200 ks/s
I2S
Watchdog timer
2x comparator
10 / 15 / 31 GPIOs
TRNG
SPI-I2C digital sensor IF
AES
Temp. / batt. monitor
Constant current source
32 ch. µDMA
RTC
Time-to-digital converter
2KB SRAM
DC-DC converter
Copyright © 2016, Texas Instruments Incorporated
Figure 1-1. Block Diagram
Device Overview
Copyright © 2015–2016, Texas Instruments Incorporated
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3
CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
www.ti.com
Table of Contents
1
2
3
Device Overview ......................................... 1
5.22
Synchronous Serial Interface (SSI)
1.1
Features .............................................. 1
5.23
DC Characteristics .................................. 24
1.2
Applications ........................................... 2
1.3
Description ............................................ 2
1.4
Functional Block Diagram ............................ 3
................
...............................
5.26 Switching Characteristics ...........................
5.27 Typical Characteristics ..............................
Detailed Description ...................................
6.1
Overview ............................................
6.2
Functional Block Diagram ...........................
6.3
Main CPU ...........................................
6.4
RF Core .............................................
6.5
Sensor Controller ...................................
6.6
Memory ..............................................
6.7
Debug ...............................................
6.8
Power Management .................................
6.9
Clock Systems ......................................
6.10 General Peripherals and Modules ..................
6.11 Voltage Supply Domains ............................
6.12 System Architecture .................................
Application, Implementation, and Layout .........
7.1
Application Information ..............................
Revision History ......................................... 5
Device Comparison ..................................... 6
4
Terminal Configuration and Functions .............. 7
........................ 7
4.2
Signal Descriptions – RGZ Package ................. 7
4.3
Pin Diagram – RHB Package ........................ 9
4.4
Signal Descriptions – RHB Package ................. 9
4.5
Pin Diagram – RSM Package ....................... 11
4.6
Signal Descriptions – RSM Package ............... 11
Specifications ........................................... 13
5.1
Absolute Maximum Ratings ......................... 13
5.2
ESD Ratings ........................................ 13
5.3
Recommended Operating Conditions ............... 13
5.4
Power Consumption Summary...................... 14
5.5
General Characteristics ............................. 14
4.1
5
6
Related Products ..................................... 6
3.1
Pin Diagram – RGZ Package
5.6
7
1-Mbps GFSK (Bluetooth low energy Technology) –
RX ................................................... 15
1-Mbps GFSK (Bluetooth low energy Technology) –
TX ................................................... 16
5.7
..................
5.24
Thermal Resistance Characteristics
25
5.25
Timing Requirements
26
7.2
7.3
8
26
27
31
31
31
32
32
33
34
34
35
36
36
37
37
38
38
5 × 5 External Differential (5XD) Application Circuit
...................................................... 40
4 × 4 External Single-ended (4XS) Application
Circuit ............................................... 42
Device and Documentation Support ............... 44
2-Mbps GFSK (Bluetooth 5) – RX
5.9
2-Mbps GFSK (Bluetooth 5) – TX ................... 17
8.1
Device Nomenclature ............................... 44
5.10
5-Mbps (Proprietary) – RX .......................... 17
8.2
Tools and Software
5.11
5-Mbps (Proprietary) – TX
..........................
24-MHz Crystal Oscillator (XOSC_HF) .............
32.768-kHz Crystal Oscillator (XOSC_LF) ..........
48-MHz RC Oscillator (RCOSC_HF) ...............
32-kHz RC Oscillator (RCOSC_LF).................
ADC Characteristics.................................
Temperature Sensor ................................
Battery Monitor ......................................
Continuous Time Comparator .......................
Low-Power Clocked Comparator ...................
Programmable Current Source .....................
18
8.3
Documentation Support ............................. 46
18
8.4
Texas Instruments Low-Power RF Website
18
8.5
Low-Power RF eNewsletter ......................... 46
19
8.6
Community Resources .............................. 46
19
8.7
Additional Information ............................... 47
19
8.8
Trademarks.......................................... 47
21
8.9
Electrostatic Discharge Caution ..................... 47
21
8.10
Export Control Notice
21
8.11
Glossary ............................................. 47
5.13
5.14
5.15
5.16
5.17
5.18
5.19
5.20
5.21
22
22
9
.................................
........
...............................
45
46
47
Mechanical Packaging and Orderable
Information .............................................. 47
9.1
4
22
5.8
5.12
16
................
Packaging Information
Table of Contents
..............................
47
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CC2640
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SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from October 23, 2015 to July 5, 2016
•
•
•
•
•
•
•
•
•
Page
Added split VDDS supply rail feature .............................................................................................. 1
Added 5-Mbps proprietary mode ................................................................................................... 1
Added option for up to 80-Ω ESR when CL is 6 pF or lower .................................................................. 18
Added tolerance for RCOSC_LF and RTC accuracy content ................................................................ 19
Updated the Soc ADC internal voltage reference specification in Section 5.16 ........................................... 19
Moved all SSI parameters to Section 5.22 ...................................................................................... 22
Added 0-dBm setting to the TX Current Consumption vs Supply Voltage (VDDS) graph ................................ 27
Changed Figure 5-11, Receive Mode Current vs Supply Voltage (VDDS) ................................................. 27
Added Figure 5-21, Supply Current vs Temperature .......................................................................... 28
Changes from February 15, 2015 to October 22, 2015
•
•
•
•
•
•
•
•
•
•
•
Page
Removed RHB package option from CC2620 .................................................................................... 6
Added motional inductance recommendation to the 24-MHz XOSC table ................................................. 18
Added SPI timing parameters ..................................................................................................... 22
Added VOH and VOL min and max values for 4-mA and 8-mA load ....................................................... 24
Added min and max values for VIH and VIL .................................................................................... 25
Added BLE Sensitivity vs Channel Frequency .................................................................................. 27
Added RF Output Power vs Channel Frequency ............................................................................... 27
Added Figure 5-11, Receive Mode Current vs Supply Voltage (VDDS) ..................................................... 27
Changed Figure 5-20, SoC ADC ENOB vs Sampling Frequency (Input Frequency = FS / 10) .......................... 28
Clarified Brown Out Detector status and functionality in the Power Modes table. ......................................... 35
Added application circuit schematics and layout for 5XD and 4XS .......................................................... 38
Revision History
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CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
www.ti.com
3 Device Comparison
Table 3-1. Device Family Overview
DEVICE
PHY SUPPORT
FLASH
(KB)
RAM (KB)
GPIO
PACKAGE (1)
CC2650F128xxx
Multi-Protocol (2)
128
20
31, 15, 10
RGZ, RHB, RSM
CC2640F128xxx
Bluetooth low energy (Normal)
128
20
31, 15, 10
RGZ, RHB, RSM
CC2630F128xxx
IEEE 802.15.4 ( ZigBee®/6LoWPAN)
128
20
31, 15, 10
RGZ, RHB, RSM
CC2620F128xxx
IEEE 802.15.4 (RF4CE)
128
20
31, 10
RGZ, RSM
(1)
(2)
3.1
Package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm × 7-mm VQFN48, RHB is
5-mm × 5-mm VQFN32, and RSM is 4-mm × 4-mm VQFN32.
The CC2650 device supports all PHYs and can be reflashed to run all the supported standards.
Related Products
Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low power RF
solutions suitable for a broad range of application. The offerings range from fully customized
solutions to turn key offerings with pre-certified hardware and software (protocol).
Sub-1 GHz Long-range, low power wireless connectivity solutions are offered in a wide range of Sub-1
GHz ISM bands.
Companion Products Review products that are frequently purchased or used in conjunction with this
product.
SimpleLink™ CC2650 Wireless MCU LaunchPad™ Kit The CC2650 LaunchPad kit brings easy
Bluetooth® Smart connectivity to the LaunchPad kit ecosystem with the SimpleLink ultra-low
power CC26xx family of devices. This LaunchPad kit also supports development for multiprotocol support for the SimpleLink multi-standard CC2650 wireless MCU and the rest of
CC26xx family of products: CC2630 wireless MCU for ZigBee®/6LoWPAN and CC2640
wireless MCU for Bluetooth® Smart.
Reference Designs for CC2640 TI Designs Reference Design Library is a robust reference design library
spanning analog, embedded processor and connectivity. Created by TI experts to help you
jump-start your system design, all TI Designs include schematic or block diagrams, BOMs
and design files to speed your time to market. Search and download designs at
ti.com/tidesigns.
6
Device Comparison
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SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
4 Terminal Configuration and Functions
25 JTAG_TCKC
26 DIO_16
27 DIO_17
28 DIO_18
29 DIO_19
30 DIO_20
31 DIO_21
32 DIO_22
33 DCDC_SW
34 VDDS_DCDC
35 RESET_N
Pin Diagram – RGZ Package
36 DIO_23
4.1
DIO_24 37
24 JTAG_TMSC
DIO_25 38
23 DCOUPL
DIO_26 39
22 VDDS3
DIO_27 40
21 DIO_15
DIO_28 41
20 DIO_14
DIO_29 42
19 DIO_13
DIO_30 43
18 DIO_12
VDDS 44
17 DIO_11
VDDR 45
16 DIO_10
X24M_N 46
15 DIO_9
X24M_P 47
14 DIO_8
13 VDDS2
Note:
DIO_7 12
9
DIO_4
DIO_6 11
8
DIO_5 10
7
5
DIO_0
DIO_3
4
X32K_Q2
DIO_2
3
X32K_Q1
6
2
RF_N
DIO_1
1
RF_P
VDDR_RF 48
I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities.
Figure 4-1. RGZ Package
48-Pin VQFN
(7-mm × 7-mm) Pinout, 0.5-mm Pitch
4.2
Signal Descriptions – RGZ Package
Table 4-1. Signal Descriptions – RGZ Package
NAME
NO.
TYPE
DESCRIPTION
DCDC_SW
33
Power
Output from internal DC-DC (1)
DCOUPL
23
Power
1.27-V regulated digital-supply decoupling capacitor (2)
DIO_0
5
Digital I/O
GPIO, Sensor Controller
DIO_1
6
Digital I/O
GPIO, Sensor Controller
DIO_2
7
Digital I/O
GPIO, Sensor Controller
DIO_3
8
Digital I/O
GPIO, Sensor Controller
DIO_4
9
Digital I/O
GPIO, Sensor Controller
DIO_5
10
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_6
11
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_7
12
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_8
14
Digital I/O
GPIO
DIO_9
15
Digital I/O
GPIO
DIO_10
16
Digital I/O
GPIO
(1)
(2)
See technical reference manual (listed in Section 8.3) for more details.
Do not supply external circuitry from this pin.
Terminal Configuration and Functions
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CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
www.ti.com
Table 4-1. Signal Descriptions – RGZ Package (continued)
NAME
NO.
TYPE
DIO_11
17
Digital I/O
GPIO
DIO_12
18
Digital I/O
GPIO
DIO_13
19
Digital I/O
GPIO
DIO_14
20
Digital I/O
GPIO
DIO_15
21
Digital I/O
GPIO
DIO_16
26
Digital I/O
GPIO, JTAG_TDO, high-drive capability
DIO_17
27
Digital I/O
GPIO, JTAG_TDI, high-drive capability
DIO_18
28
Digital I/O
GPIO
DIO_19
29
Digital I/O
GPIO
DIO_20
30
Digital I/O
GPIO
DIO_21
31
Digital I/O
GPIO
DIO_22
32
Digital I/O
GPIO
DIO_23
36
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_24
37
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_25
38
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_26
39
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_27
40
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_28
41
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_29
42
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_30
43
Digital/Analog I/O
GPIO, Sensor Controller, Analog
JTAG_TMSC
24
Digital I/O
JTAG TMSC, high-drive capability
JTAG_TCKC
25
Digital I/O
JTAG TCKC
RESET_N
35
Digital input
RF_P
1
RF I/O
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N
2
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
VDDR
45
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC-DC (2) (3)
VDDR_RF
48
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC-DC (2) (4)
VDDS
44
Power
1.8-V to 3.8-V main chip supply (1)
VDDS2
13
Power
1.8-V to 3.8-V DIO supply (1)
VDDS3
22
Power
1.8-V to 3.8-V DIO supply (1)
VDDS_DCDC
34
Power
1.8-V to 3.8-V DC-DC supply
X32K_Q1
3
Analog I/O
32-kHz crystal oscillator pin 1
X32K_Q2
4
Analog I/O
32-kHz crystal oscillator pin 2
X24M_N
46
Analog I/O
24-MHz crystal oscillator pin 1
X24M_P
47
Analog I/O
24-MHz crystal oscillator pin 2
EGP
(3)
(4)
8
Power
DESCRIPTION
Reset, active-low. No internal pullup.
Ground – Exposed Ground Pad
If internal DC-DC is not used, this pin is supplied internally from the main LDO.
If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO.
Terminal Configuration and Functions
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17 DCDC_SW
18 VDDS_DCDC
19 RESET_N
20 DIO_7
21 DIO_8
22 DIO_9
23 DIO_10
Pin Diagram – RHB Package
24 DIO_11
4.3
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
DIO_12 25
16 DIO_6
DIO_13 26
15 DIO_5
DIO_14 27
14 JTAG_TCKC
VDDS 28
13 JTAG_TMSC
VDDR 29
12 DCOUPL
X24M_N 30
11 VDDS2
X24M_P 31
10 DIO_4
Note:
1
2
3
4
5
6
7
8
RF_N
RX_TX
X32K_Q1
X32K_Q2
DIO_0
DIO_1
DIO_2
9
RF_P
VDDR_RF 32
DIO_3
I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities.
Figure 4-2. RHB Package
32-Pin VQFN
(5-mm × 5-mm) Pinout, 0.5-mm Pitch
4.4
Signal Descriptions – RHB Package
Table 4-2. Signal Descriptions – RHB Package
NAME
NO.
TYPE
DESCRIPTION
DCDC_SW
17
Power
Output from internal DC-DC (1)
DCOUPL
12
Power
1.27-V regulated digital-supply decoupling (2)
DIO_0
6
Digital I/O
GPIO, Sensor Controller
DIO_1
7
Digital I/O
GPIO, Sensor Controller
DIO_2
8
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_3
9
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_4
10
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_5
15
Digital I/O
GPIO, High drive capability, JTAG_TDO
DIO_6
16
Digital I/O
GPIO, High drive capability, JTAG_TDI
DIO_7
20
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_8
21
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_9
22
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_10
23
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_11
24
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_12
25
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_13
26
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_14
27
Digital/Analog I/O
GPIO, Sensor Controller, Analog
JTAG_TMSC
13
Digital I/O
JTAG TMSC, high-drive capability
JTAG_TCKC
14
Digital I/O
JTAG TCKC
(1)
(2)
See technical reference manual (listed in Section 8.3) for more details.
Do not supply external circuitry from this pin.
Terminal Configuration and Functions
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Table 4-2. Signal Descriptions – RHB Package (continued)
NAME
NO.
TYPE
RESET_N
19
Digital input
RF_N
2
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
RF_P
1
RF I/O
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RX_TX
3
RF I/O
Optional bias pin for the RF LNA
VDDR
29
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC-DC (3) (2)
VDDR_RF
32
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC-DC (2) (4)
VDDS
28
Power
1.8-V to 3.8-V main chip supply (1)
VDDS2
11
Power
1.8-V to 3.8-V GPIO supply (1)
VDDS_DCDC
18
Power
1.8-V to 3.8-V DC-DC supply
X32K_Q1
4
Analog I/O
32-kHz crystal oscillator pin 1
X32K_Q2
5
Analog I/O
32-kHz crystal oscillator pin 2
X24M_N
30
Analog I/O
24-MHz crystal oscillator pin 1
X24M_P
31
Analog I/O
24-MHz crystal oscillator pin 2
EGP
(3)
(4)
10
Power
DESCRIPTION
Reset, active-low. No internal pullup.
Ground – Exposed Ground Pad
If internal DC-DC is not used, this pin is supplied internally from the main LDO.
If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO.
Terminal Configuration and Functions
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17 VSS
18 DCDC_SW
19 VDDS_DCDC
20 VSS
21 RESET_N
22 DIO_5
23 DIO_6
Pin Diagram – RSM Package
24 DIO_7
4.5
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
DIO_8 25
16 DIO_4
DIO_9 26
15 DIO_3
VDDS 27
14 JTAG_TCKC
VDDR 28
13 JTAG_TMSC
VSS 29
12 DCOUPL
X24M_N 30
11 VDDS2
X24M_P 31
10 DIO_2
Note:
5
6
7
8
X32K_Q1
X32K_Q2
VSS
DIO_0
3
VSS
4
2
RF_N
RX_TX
1
9
RF_P
VDDR_RF 32
DIO_1
I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities.
Figure 4-3. RSM Package
32-Pin VQFN
(4-mm × 4-mm) Pinout, 0.4-mm Pitch
4.6
Signal Descriptions – RSM Package
Table 4-3. Signal Descriptions – RSM Package
NAME
NO.
TYPE
DESCRIPTION
DCDC_SW
18
Power
Output from internal DC-DC.
(1.7-V to 1.95-V operation)
DCOUPL
12
Power
1.27-V regulated digital-supply decoupling capacitor (2)
DIO_0
8
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_1
9
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_2
10
Digital I/O
GPIO, Sensor Controller, high-drive capability
DIO_3
15
Digital I/O
GPIO, High drive capability, JTAG_TDO
DIO_4
16
Digital I/O
GPIO, High drive capability, JTAG_TDI
DIO_5
22
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_6
23
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_7
24
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_8
25
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_9
26
Digital/Analog I/O
GPIO, Sensor Controller, Analog
JTAG_TMSC
13
Digital I/O
JTAG TMSC
JTAG_TCKC
14
Digital I/O
JTAG TCKC
RESET_N
21
Digital Input
RF_N
2
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
RF_P
1
RF I/O
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
(1)
(2)
(1)
. Tie to ground for external regulator mode
Reset, active-low. No internal pullup.
See technical reference manual (listed in Section 8.3) for more details.
Do not supply external circuitry from this pin.
Terminal Configuration and Functions
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Table 4-3. Signal Descriptions – RSM Package (continued)
NAME
NO.
TYPE
DESCRIPTION
RX_TX
4
RF I/O
Optional bias pin for the RF LNA
VDDR
28
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC-DC.
(2) (3)
(2) (4)
VDDR_RF
32
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC-DC
VDDS
27
Power
1.8-V to 3.8-V main chip supply (1)
VDDS2
11
Power
1.8-V to 3.8-V GPIO supply (1)
VDDS_DCDC
19
Power
1.8-V to 3.8-V DC-DC supply. Tie to ground for external regulator mode
(1.7-V to 1.95-V operation).
3, 7, 17, 20,
29
Power
X32K_Q1
5
Analog I/O
32-kHz crystal oscillator pin 1
X32K_Q2
6
Analog I/O
32-kHz crystal oscillator pin 2
X24M_N
30
Analog I/O
24-MHz crystal oscillator pin 1
X24M_P
31
Analog I/O
24-MHz crystal oscillator pin 2
VSS
EGP
(3)
(4)
12
Power
Ground
Ground – Exposed Ground Pad
If internal DC-DC is not used, this pin is supplied internally from the main LDO.
If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO.
Terminal Configuration and Functions
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SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
5 Specifications
5.1
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
Supply voltage (VDDS, VDDS2,
and VDDS3)
VDDR supplied by internal DC-DC regulator or
internal GLDO. VDDS_DCDC connected to VDDS on
PCB.
UNIT
–0.3
4.1
V
Supply voltage (VDDS (3) and
VDDR)
External regulator mode (VDDS and VDDR pins
connected on PCB)
–0.3
2.25
V
Voltage on any digital pin (4) (5)
–0.3
VDDSx + 0.3, max 4.1
V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P
–0.3
VDDR + 0.3, max 2.25
V
Voltage scaling enabled
–0.3
VDDS
Voltage scaling disabled, internal reference
–0.3
1.49
Voltage scaling disabled, VDDS as reference
–0.3
VDDS / 2.9
Storage temperature
–40
150
Voltage on ADC input (Vin)
Input RF level
5
Tstg
(1)
(2)
(3)
(4)
(5)
°C
ESD Ratings
VALUE
VESD
5.3
dBm
All voltage values are with respect to ground, unless otherwise noted.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
In external regulator mode, VDDS2 and VDDS3 must be at the same potential as VDDS.
Including analog-capable DIO.
Each pin is referenced to a specific VDDSx (VDDS, VDDS2 or VDDS3). For a pin-to-VDDS mapping table, see Table 6-3.
5.2
(1)
(2)
V
Electrostatic discharge
(ESD) performance
Human body model (HBM), per ANSI/ESDA/JEDEC
JS001 (1)
Charged device model (CDM), per JESD22-C101 (2)
All pins
±2500
RF pins
±750
Non-RF pins
±750
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Ambient temperature range
Operating supply voltage
(VDDS and VDDR), external
regulator mode
For operation in 1.8-V systems
(VDDS and VDDR pins connected on PCB, internal DCDC cannot be used)
Operating supply voltage VDDS For operation in battery-powered and 3.3-V systems
(internal DC-DC can be used to minimize power
Operating supply voltages
consumption)
VDDS2 and VDDS3
MIN
MAX
–40
85
°C
1.7
1.95
V
1.8
3.8
V
0.7 × VDDS, min 1.8
3.8
V
Specifications
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UNIT
13
CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
5.4
www.ti.com
Power Consumption Summary
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V with internal DC-DC converter, unless
otherwise noted.
PARAMETER
Icore
Core current consumption
TEST CONDITIONS
MIN
TYP
Reset. RESET_N pin asserted or VDDS below
Power-on-Reset threshold
100
Shutdown. No clocks running, no retention
150
Standby. With RTC, CPU, RAM and (partial)
register retention. RCOSC_LF
1
Standby. With RTC, CPU, RAM and (partial)
register retention. XOSC_LF
1.2
Standby. With Cache, RTC, CPU, RAM and
(partial) register retention. RCOSC_LF
2.5
Standby. With Cache, RTC, CPU, RAM and
(partial) register retention. XOSC_LF
2.7
Idle. Supply Systems and RAM powered.
550
(1)
nA
µA
5.9
Radio RX (2)
6.1
(1)
6.1
Radio TX, 5-dBm output power (2)
9.1
Radio TX, 0-dBm output power
UNIT
1.45 mA +
31 µA/MHz
Active. Core running CoreMark
Radio RX
MAX
mA
Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated) (3)
Iperi
(1)
(2)
(3)
5.5
Peripheral power domain
Delta current with domain enabled
20
µA
Serial power domain
Delta current with domain enabled
13
µA
RF Core
Delta current with power domain enabled, clock
enabled, RF core idle
237
µA
µDMA
Delta current with clock enabled, module idle
130
µA
Timers
Delta current with clock enabled, module idle
113
µA
I2C
Delta current with clock enabled, module idle
12
µA
I2S
Delta current with clock enabled, module idle
36
µA
SSI
Delta current with clock enabled, module idle
93
µA
UART
Delta current with clock enabled, module idle
164
µA
Single-ended RF mode is optimized for size and power consumption. Measured on CC2650EM-4XS.
Differential RF mode is optimized for RF performance. Measured on CC2650EM-5XD.
Iperi is not supported in Standby or Shutdown.
General Characteristics
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FLASH MEMORY
Supported flash erase cycles before
failure
Flash page/sector erase current
100
Average delta current
12.6
4
KB
Average delta current, 4 bytes at a time
8.15
mA
8
ms
8
µs
Flash page/sector size
Flash write current
Flash page/sector erase time (1)
Flash write time
(1)
14
(1)
k Cycles
4 bytes at a time
mA
This number is dependent on Flash aging and will increase over time and erase cycles.
Specifications
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5.6
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
1-Mbps GFSK (Bluetooth low energy Technology) – RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Receiver sensitivity
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
–97
dBm
Receiver sensitivity
Single-ended mode. Measured on CC2650EM-4XS,
at the SMA connector, BER = 10–3
–96
dBm
Receiver saturation
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
4
dBm
Receiver saturation
Single-ended mode. Measured on CC2650EM-4XS,
at the SMA connector, BER = 10–3
0
dBm
Frequency error tolerance
Difference between the incoming carrier frequency
and the internally generated carrier frequency
–350
350
kHz
Data rate error tolerance
Difference between incoming data rate and the
internally generated data rate
–750
750
ppm
Co-channel rejection
(1)
Wanted signal at –67 dBm, modulated interferer in
channel,
BER = 10–3
–6
dB
Selectivity, ±1 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±1 MHz,
BER = 10–3
7 / 3 (2)
dB
Selectivity, ±2 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±2 MHz,
BER = 10–3
34 / 25 (2)
dB
Selectivity, ±3 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±3 MHz,
BER = 10–3
38 / 26 (2)
dB
Selectivity, ±4 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±4 MHz,
BER = 10–3
42 / 29 (2)
dB
32
dB
25
dB
3 / 26 (2)
dB
Selectivity, ±5 MHz or more (1)
Wanted signal at –67 dBm, modulated interferer at ≥
±5 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
Selectivity, Image frequency (1) image frequency,
BER = 10–3
Selectivity, Image frequency
±1 MHz (1)
Out-of-band blocking
(3)
Wanted signal at –67 dBm, modulated interferer at
±1 MHz from image frequency, BER = 10–3
–20
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
–5
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
–8
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
–8
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two
interferers at 2405 and 2408 MHz respectively, at
the given power level
–34
dBm
Spurious emissions,
30 to 1000 MHz
Conducted measurement in a 50-Ω single-ended
load. Suitable for systems targeting compliance with
EN 300 328, EN 300 440 class 2, FCC CFR47, Part
15 and ARIB STD-T-66
–71
dBm
Spurious emissions,
1 to 12.75 GHz
Conducted measurement in a 50 Ω single-ended
load. Suitable for systems targeting compliance with
EN 300 328, EN 300 440 class 2, FCC CFR47, Part
15 and ARIB STD-T-66
–62
dBm
RSSI dynamic range
70
dB
RSSI accuracy
±4
dB
(1)
(2)
(3)
30 MHz to 2000 MHz
Numbers given as I/C dB.
X / Y, where X is +N MHz and Y is –N MHz.
Excluding one exception at Fwanted / 2, per Bluetooth Specification.
Specifications
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5.7
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1-Mbps GFSK (Bluetooth low energy Technology) – TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output power, highest setting
Differential mode, delivered to a single-ended 50-Ω load
through a balun
5
dBm
Output power, highest setting
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ω load
2
dBm
Output power, lowest setting
Delivered to a single-ended 50-Ω load through a balun
–21
dBm
f < 1 GHz, outside restricted bands
–43
dBm
f < 1 GHz, restricted bands ETSI
–65
dBm
f < 1 GHz, restricted bands FCC
–76
dBm
f > 1 GHz, including harmonics
–46
dBm
Spurious emission conducted
measurement (1)
(1)
5.8
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
2-Mbps GFSK (Bluetooth 5) – RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Receiver sensitivity
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
–92
dBm
Receiver saturation
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
4
dBm
Frequency error tolerance
Difference between the incoming carrier frequency
and the internally generated carrier frequency
Data rate error tolerance
Difference between incoming data rate and the
internally generated data rate
Co-channel rejection
(1)
–300
500
kHz
–1000
1000
ppm
Wanted signal at –67 dBm, modulated interferer in
channel,
BER = 10–3
–7
dB
Selectivity, ±2 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±2 MHz, Image frequency is at -2 MHz
BER = 10–3
8 / 4 (2)
dB
Selectivity, ±4 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±4 MHz,
BER = 10–3
31 / 26 (2)
dB
Selectivity, ±6 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±6 MHz,
BER = 10–3
37 / 38 (2)
dB
37 / 36 (2)
dB
Wanted signal at –67 dBm, modulated interferer at
Selectivity, Image frequency (1) image frequency,
BER = 10–3
4
dB
Note that Image frequency + 2 MHz is the Cochannel. Wanted signal at –67 dBm, modulated
interferer at ±2 MHz from image frequency, BER =
10–3
-7 / 26 (2)
dB
Alternate channel rejection, ±7 Wanted signal at –67 dBm, modulated interferer at ≥
MHz (1)
±7 MHz, BER = 10–3
Selectivity, Image frequency
±2 MHz (1)
Out-of-band blocking
(3)
30 MHz to 2000 MHz
–33
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
–15
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
–12
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
–10
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two
interferers at 2405 and 2408 MHz respectively, at
the given power level
–45
dBm
(1)
(2)
(3)
16
Numbers given as I/C dB.
X / Y, where X is +N MHz and Y is –N MHz.
Excluding one exception at Fwanted / 2, per Bluetooth Specification.
Specifications
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5.9
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
2-Mbps GFSK (Bluetooth 5) – TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output power, highest setting
Differential mode, delivered to a single-ended 50-Ω load
through a balun
5
dBm
Output power, highest setting
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ω load
2
dBm
Output power, lowest setting
Delivered to a single-ended 50-Ω load through a balun
–21
dBm
f < 1 GHz, outside restricted bands
–43
dBm
f < 1 GHz, restricted bands ETSI
–65
dBm
f < 1 GHz, restricted bands FCC
–76
dBm
f > 1 GHz, including harmonics
–46
dBm
Spurious emission conducted
measurement (1)
(1)
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
5.10 5-Mbps (Proprietary) – RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Receiver sensitivity
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
–81
dBm
Receiver saturation
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
-11
dBm
Frequency error tolerance
Difference between the incoming carrier frequency
and the internally generated carrier frequency
–300
300
kHz
Data rate error tolerance
Difference between incoming data rate and the
internally generated data rate
–200
200
ppm
Co-channel rejection
(1)
Wanted signal 11 dB above sensitivity level,
modulated interferer in channel,
BER = 10–3
–19
dB
Selectivity, ±4 MHz
(1)
Wanted signal 11 dB above sensitivity level,
modulated interferer at ±4 MHz
BER = 10–3
9 / 9 (2)
dB
Selectivity, ±5 MHz
(1)
Wanted signal 11 dB above sensitivity level,
modulated interferer at ±5 MHz,
BER = 10–3
19 / 19 (2)
dB
Selectivity, ±8 MHz
(1)
Wanted signal 11 dB above sensitivity level,
modulated interferer at ±8 MHz,
BER = 10–3
28 / 28 (2)
dB
Selectivity, ±10 MHz (1)
Wanted signal 11 dB above sensitivity level,
modulated interferer at ±10 MHz, BER = 10–3
33 / 33 (2)
dB
Selectivity, ±12 MHz (1)
Wanted signal 11 dB above sensitivity level,
modulated interferer at ±12 MHz,
BER = 10–3
37/ 37 (2)
dB
Selectivity, ±15 MHz (1)
Wanted signal 11 dB above sensitivity level,
modulated interferer at ±15 MHz,
BER = 10–3
43/ 43 (2)
dB
Blocker rejection ±10 MHz
and above (1)
Wanted signal 3dB above sensitivity limit , CW
interferer at ±10 MHz and above, BER = 10–3
40
dB
(1)
(2)
Numbers given as I/C dB.
X / Y, where X is +N MHz and Y is –N MHz.
Specifications
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5.11 5-Mbps (Proprietary) – TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output power, highest setting
Differential mode, delivered to a single-ended 50-Ω load
through a balun
5
dBm
Output power, highest setting
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ω load
2
dBm
Output power, lowest setting
Delivered to a single-ended 50-Ω load through a balun
–21
dBm
Occupied bandwidth
95% BW
2.4
MHz
Occupied bandwidth
99% BW
3.7
MHz
f < 1 GHz, outside restricted bands
–43
dBm
f < 1 GHz, restricted bands ETSI
–65
dBm
f < 1 GHz, restricted bands FCC
–76
dBm
f > 1 GHz, including harmonics
–46
dBm
Spurious emission conducted
measurement (1)
(1)
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
5.12 24-MHz Crystal Oscillator (XOSC_HF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. (1)
PARAMETER
TEST CONDITIONS
ESR Equivalent series resistance (2)
ESR Equivalent series resistance
LM Motional inductance
(2)
UNIT
60
Ω
80
Ω
< 1.6 × 10
/ CL
5
2
H
9
pF
24
MHz
–40
40
Start-up time (3) (5)
(5)
MAX
20
–24
(2) (3)
Crystal frequency tolerance (2) (4)
(1)
(2)
(3)
(4)
TYP
5 pF < CL ≤ 6 pF
Relates to load capacitance
(CL in Farads)
(2)
CL Crystal load capacitance (2)
Crystal frequency
MIN
6 pF < CL ≤ 9 pF
ppm
150
µs
Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device.
The crystal manufacturer's specification must satisfy this requirement
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V
Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per
Bluetooth specification.
Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.
5.13 32.768-kHz Crystal Oscillator (XOSC_LF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Crystal frequency (1)
Crystal frequency tolerance, Bluetooth lowenergy applications (1) (2)
ESR Equivalent series resistance
–500
(1)
30
CL Crystal load capacitance (1)
(1)
(2)
18
TYP
MAX
32.768
6
UNIT
kHz
500
ppm
100
kΩ
12
pF
The crystal manufacturer's specification must satisfy this requirement
Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per
Bluetooth specification.
Specifications
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CC2640
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SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
5.14 48-MHz RC Oscillator (RCOSC_HF)
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
Frequency
UNIT
48
Uncalibrated frequency accuracy
±1%
Calibrated frequency accuracy (1)
±0.25%
Start-up time
(1)
MAX
MHz
5
µs
Accuracy relative to the calibration source (XOSC_HF).
5.15 32-kHz RC Oscillator (RCOSC_LF)
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
Calibrated frequency (1)
32.8
Temperature coefficient
50
(1)
MAX
UNIT
kHz
ppm/°C
The frequency accuracy of the Real Time Clock (RTC) is not directly dependent on the frequency accuracy of the 32-kHz RC Oscillator.
The RTC can be calibrated to an accuracy within ±500 ppm of 32.768 kHz by measuring the frequency error of RCOSC_LF relative to
XOSC_HF and compensating the RTC tick speed. The procedure is explained in Running Bluetooth® Low Energy on CC2640 Without
32 kHz Crystal.
5.16 ADC Characteristics
Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted. (1)
PARAMETER
TEST CONDITIONS
Input voltage range
MIN
TYP
0
Resolution
VDDS
12
Sample rate
DNL (3)
INL
(4)
ENOB
Internal 4.3-V equivalent reference
2
LSB
Gain error
Internal 4.3-V equivalent reference (2)
2.4
LSB
>–1
LSB
±3
LSB
Differential nonlinearity
Integral nonlinearity
Effective number of bits
Internal 4.3-V equivalent reference (2), 200 ksps,
9.6-kHz input tone
9.8
VDDS as reference, 200 ksps, 9.6-kHz input tone
10
Signal-to-noise
and
Distortion ratio
Spurious-free dynamic
range
Bits
11.1
(2)
, 200 ksps,
Total harmonic distortion VDDS as reference, 200 ksps, 9.6-kHz input tone
–65
–69
dB
–71
Internal 4.3-V equivalent reference (2), 200 ksps,
9.6-kHz input tone
60
VDDS as reference, 200 ksps, 9.6-kHz input tone
63
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
69
Internal 4.3-V equivalent reference
9.6-kHz input tone
(1)
(2)
(3)
(4)
ksps
Offset
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
SFDR
V
Bits
200
Internal 4.3-V equivalent reference
9.6-kHz input tone
SINAD,
SNDR
UNIT
(2)
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
THD
MAX
dB
(2)
, 200 ksps,
67
VDDS as reference, 200 ksps, 9.6-kHz input tone
72
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
73
dB
Using IEEE Std 1241™-2010 for terminology and test methods.
Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.
No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device (see Figure 5-22).
For a typical example, see Figure 5-23.
Specifications
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CC2640
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
www.ti.com
ADC Characteristics (continued)
Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1)
PARAMETER
(5)
20
TEST CONDITIONS
MIN
TYP
50
MAX
UNIT
clockcycles
Conversion time
Serial conversion, time-to-output, 24-MHz clock
Current consumption
Internal 4.3-V equivalent reference (2)
0.66
mA
Current consumption
VDDS as reference
0.75
mA
Reference voltage
Equivalent fixed internal reference (input voltage scaling
enabled). For best accuracy, the ADC conversion should
be initiated through the TIRTOS API in order to include the
gain/offset compensation factors stored in FCFG1.
4.3 (2) (5)
V
Reference voltage
Fixed internal reference (input voltage scaling disabled).
For best accuracy, the ADC conversion should be initiated
through the TIRTOS API in order to include the gain/offset
compensation factors stored in FCFG1. This value is
derived from the scaled value (4.3V) as follows:
Vref=4.3V*1408/4095
1.48
V
Reference voltage
VDDS as reference (Also known as RELATIVE) (input
voltage scaling enabled)
VDDS
V
Reference voltage
VDDS as reference (Also known as RELATIVE) (input
voltage scaling disabled)
VDDS /
2.82 (5)
V
Input Impedance
200 ksps, voltage scaling enabled. Capacitive input, Input
impedance depends on sampling frequency and sampling
time
>1
MΩ
Applied voltage must be within absolute maximum ratings (Section 5.1) at all times.
Specifications
Copyright © 2015–2016, Texas Instruments Incorporated
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Product Folder Links: CC2640
CC2640
www.ti.com
SWRS176B – FEBRUARY 2015 – REVISED JULY 2016
5.17 Temperature Sensor
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Resolution
TYP
MAX
4
Range
UNIT
°C
–40
85
°C
Accuracy
±5
°C
Supply voltage coefficient (1)
3.2
°C/V
(1)
Automatically compensated when using supplied driver libraries.
5.18 Battery Monitor
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Resolution
TYP
MAX
50
Range
1.8
Accuracy
UNIT
mV
3.8
13
V
mV
5.19 Continuous Time Comparator
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage range
0
VDDS
V
External reference voltage
0
VDDS
V
Internal reference voltage
DCOUPL as reference
Offset
Hysteresis
Decision time
Step from –10 mV to 10 mV
Current consumption when enabled (1)
(1)
1.27
V
3
mV
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