CC2651R3SIPAT0MOUR

CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 CC2651R3SIPA SimpleLink™ Multiprotocol 2.4 GHz Wireless System-in-Package Module with integrated Antenna & 352-KB Memory 1 Features Wireless microcontroller • • • • • • Powerful 48-MHz Arm® Cortex®-M4 processor 352KB flash program memory 32KB of ultra-low leakage SRAM 8KB of Cache SRAM (Alternatively available as general-purpose RAM) Programmable radio includes support for 2(G)FSK, 4-(G)FSK, MSK, Bluetooth® 5.2 Low Energy, IEEE 802.15.4 PHY and MAC Supports over-the-air upgrade (OTA) Low power consumption • • MCU consumption: – 3.60 mA active mode, CoreMark – 61 μA/MHz running CoreMark – 0.8 μA standby mode, RTC, 32KB RAM – 0.1 μA shutdown mode, wake-up on pin Radio Consumption: – 6.8 mA RX – 7.1 mA TX at 0 dBm – 9.6 mA TX at +5 dBm • • Real-time clock (RTC) Integrated temperature and battery monitor Security enablers • • • AES 128-bit cryptographic accelerator True random number generator (TRNG) Additional cryptography drivers available in Software Development Kit (SDK) Development tools and software • • • • LP-CC2651R3SIPA Development Kit SimpleLink™ CC13xx and CC26xx Software Development Kit (SDK) SmartRF™ Studio for simple radio configuration SysConfig system configuration tool Operating range • • • On-chip buck DC/DC converter 1.8-V to 3.8-V single supply voltage Tj: -40 to +105°C Package • • 7-mm × 7-mm MOU (32 GPIOs) RoHS-compliant package Wireless protocol support • • • • Zigbee® Bluetooth® 5.2 Low Energy SimpleLink™ TI 15.4-stack Proprietary systems High performance radio • • -104 dBm for Bluetooth® Low Energy 125-kbps Output power up to +5 dBm with temperature compensation Regulatory compliance • Regulatory certification for compliance with worldwide radio frequency: – ETSI RED (Europe) / RER (UK) – ISED (Canada) – FCC (USA) MCU peripherals • • • • • • • Digital peripherals can be routed to any GPIO Four 32-bit or eight 16-bit general-purpose timers 12-bit ADC, 200 kSamples/s, 8 channels 8-bit DAC Two comparators Programmable current source UART, SSI, I2C, I2S An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 • 2 Applications • • • • • 2400 to 2480 MHz ISM and SRD systems 1 Building automation – Building security systems – motion detector, electronic smart lock, door and window sensor, garage door system, gateway – HVAC – thermostat, wireless environmental sensor, HVAC system controller, gateway – Fire safety system – smoke and heat detector, fire alarm control panel (FACP) – Video surveillance – IP network camera – Elevators and escalators – elevator main control panel for elevators and escalators Industrial transport – asset tracking Factory automation and control Medical • • Electronic point of sale (EPOS) – Electronic Shelf Label (ESL) Communication equipment – Wired networking – wireless LAN or Wi-Fi access points, edge router , small business router Personal electronics – Portable electronics – RF smart remote control – Home theater & entertainment – smart speakers, smart display, set-top box – Connected peripherals – consumer wireless module, pointing devices, keyboards and keypads – Gaming – electronic and robotic toys – Wearables (non-medical) – smart trackers, smart clothing 3 Description The SimpleLink™ CC2651R3SIPA device is a multiprotocol 2.4-GHz wireless microcontroller (MCU) supporting Zigbee®, Bluetooth® 5.2 Low Energy, IEEE 802.15.4g, TI 15.4-Stack (2.4 GHz). The CC2651R3SIPA is based on an Arm® Cortex® M4 main processor and optimized for low-power wireless communication and advanced sensing in grid infrastructure, building automation, retail automation, personal electronics and medical applications. The CC2651R3SIPA is an ultra-compact 7-mm x 7-mm certified wireless module 2.4 GHz with integrated antenna, DCDC components, Balun, and high frequency crystal oscillator. The CC2651R3SIPA has a software defined radio powered by an Arm® Cortex® M0, which allows support for multiple physical layers and RF standards. The device supports operation in the 2360 to 2500-MHz frequency band. The CC2651R3SIPA supports +5 dBm TX at 9.6 mA in the 2.4-GHz band. CC2651R3SIPA has a receive sensitivity of -104 dBm for 125-kbps Bluetooth® Low Energy Coded PHY. The CC2651R3SIPA has a low sleep current of 0.9 μA with RTC and 32KB RAM retention. TI has a product life cycle policy with a commitment to product longevity and continuity of supply. The CC2651R3SIPA device is part of the SimpleLink™ MCU platform, which consists of Wi-Fi®, Bluetooth® Low Energy, Thread, Zigbee, Wi-SUN®, Amazon Sidewalk, mioty, Sub-1 GHz MCUs, and host MCU.CC2651R3SIPA is part of a scalable portfolio with flash sizes from 32KB to 704KB with pin-to-pin compatible package options. The common SimpleLink™CC13xx and CC26xx Software Development Kit (SDK) and SysConfig system configuration tool supports migration between devices in the portfolio. A comprehensive number of software stacks, application examples and SimpleLink™ Academy training sessions are included in the SDK. For more information, visit wireless connectivity. Device Information (1) PACKAGE BODY SIZE (NOM) CC2651R3SIPAT0MOUR QFM (59) 7.00 mm × 7.00 mm For the most current part, package, and ordering information for all available devices, see the Package Option Addendum in Section 13, or see the TI website. 1 2 PART NUMBER (1) See RF Core for additional details on supported protocol standards, modulation formats, and data rates. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 4 Functional Block Diagram Figure 4-1 shows the functional block diagram of the CC2651R3SIPA module. Figure 4-1. CC2651R3SIPA Block Diagram Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 3 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Figure 4-2 shows an overview of the CC2651R3SIPA hardware. 2.4 GHz (Optional External Antenna) CC2651R3SIPA Integrated Antenna 48-MHz Crystal Oscillator 5-dBm RF Balun RF Core cJTAG Main CPU 40KB ROM ADC ADC Arm® Cortex®-M4 Processor Up to 352KB Flash with 8KB Cache Digital PLL DSP Modem 48 MHz Up to 32KB SRAM SRAM Arm® Cortex®-M0 Processor ROM General Hardware Peripherals and Modules I2C 4× 32-bit Timers 8-bit DAC UART SSI (SPI) 12-bit ADC, 200 ks/s I2S Watchdog Timer 2x Low-Power Comparator Up to 32 GPIOs 32 ch. µDMA Time-to-Digital Converter AES & TRNG RTC Temperature and Battery Monitor LDO, Clocks, and References Optional DC/DC Converter Figure 4-2. CC2651R3SIPA Hardware Overview 4 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 2 3 Description.......................................................................2 4 Functional Block Diagram.............................................. 3 5 Revision History.............................................................. 5 6 Device Comparison......................................................... 6 7 Terminal Configuration and Functions..........................7 7.1 Pin Diagram................................................................ 7 7.2 Signal Descriptions – SIPA Package.......................... 8 7.3 Connections for Unused Pins and Modules................9 8 Specifications................................................................ 10 8.1 Absolute Maximum Ratings...................................... 10 8.2 ESD Ratings............................................................. 10 8.3 Recommended Operating Conditions.......................10 8.4 Power Supply and Modules...................................... 10 8.5 Power Consumption - Power Modes.........................11 8.6 Power Consumption - Radio Modes......................... 12 8.7 Nonvolatile (Flash) Memory Characteristics............. 12 8.8 Thermal Resistance Characteristics......................... 12 8.9 RF Frequency Bands................................................ 12 8.10 Antenna Characteristics..........................................13 8.11 Bluetooth Low Energy - Receive (RX).................... 14 8.12 Bluetooth Low Energy - Transmit (TX)....................17 8.13 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX.............................18 8.14 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX............................. 19 8.15 Timing and Switching Characteristics..................... 19 8.16 Peripheral Characteristics.......................................23 8.17 Typical Characteristics............................................ 31 9 Detailed Description......................................................38 9.1 Overview................................................................... 38 9.2 System CPU............................................................. 38 9.3 Radio (RF Core)........................................................39 9.4 Memory..................................................................... 40 9.5 Cryptography............................................................ 41 9.6 Timers....................................................................... 42 9.7 Serial Peripherals and I/O.........................................43 9.8 Battery and Temperature Monitor............................. 43 9.9 µDMA........................................................................ 43 9.10 Debug..................................................................... 43 9.11 Power Management................................................ 44 9.12 Clock Systems........................................................ 45 9.13 Network Processor..................................................45 9.14 Device Certification and Qualification..................... 46 9.15 Module Markings.....................................................49 9.16 End Product Labeling..............................................49 9.17 Manual Information to the End User....................... 50 10 Application, Implementation, and Layout................. 51 10.1 Typical Application Circuit....................................... 51 10.2 Alternate Application Circuit....................................53 10.3 Device Connections................................................ 55 10.4 PCB Layout Guidelines...........................................55 10.5 Reference Designs................................................. 61 10.6 Junction Temperature Calculation...........................62 11 Environmental Requirements and SMT Specifications ...............................................................63 11.1 PCB Bending...........................................................63 11.2 Handling Environment.............................................63 11.3 Storage Condition................................................... 63 11.4 PCB Assembly Guide..............................................63 11.5 Baking Conditions................................................... 64 11.6 Soldering and Reflow Condition..............................65 12 Device and Documentation Support..........................66 12.1 Device Nomenclature..............................................66 12.2 Tools and Software................................................. 66 12.3 Documentation Support.......................................... 69 12.4 Support Resources................................................. 69 12.5 Trademarks............................................................. 69 12.6 Electrostatic Discharge Caution..............................70 12.7 Glossary..................................................................70 13 Mechanical, Packaging, and Orderable Information.................................................................... 71 5 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (June 2022) to Revision B (August 2023) Page • Added RER (UK) to module comparison table................................................................................................... 6 • Corrected pin diagram to properly represent Top View ......................................................................................7 • Added Section 8.10; Antenna Characteristics, to Section 8 ............................................................................ 10 • List of certifications updated to include RER (UK)............................................................................................46 • FCC ID corrected to ZAT-2651R3SIPA.............................................................................................................46 • Added Korea, Japan, and Taiwan certifications................................................................................................46 • Added MIC (Japan) certification section........................................................................................................... 47 • Added Korea certification section..................................................................................................................... 47 • Added NCC (Taiwan) certification section........................................................................................................ 48 • Module layout guidelines updated.................................................................................................................... 56 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 5 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 6 Device Comparison 7 x 7 mm VQFN (48) 5 x 5 mm VQFN (40) 5 x 5 mm VQFN (32) 4 x 4 mm VQFN (32) +20 dBm PA Multiprotocol Thread ZigBee Bluetooth® LE Sidewalk PACKAGE SIZE FLASH (KB) RAM + Cache (KB) GPIO 32-128 16-20 + 8 10-30 352 32 + 8 22-30 352 32 + 8 26 X 352 80 + 8 30 X 704 144 + 8 30 X CC1310 X X CC1311R3 X X CC1311P3 X X CC1312R X X X CC1312R7 X X X CC1352R X X X X X X X X 352 80 + 8 28 X CC1352P X X X X X X X X X 352 80 + 8 26 X CC1352P7 X X X X X X X X X X X X X X X X X X 704 144 + 8 26 CC2640R2F X 128 20 + 8 10-31 CC2642R X 352 80 + 8 31 X CC2642R-Q1 X 352 80 + 8 31 X X 352 32 + 8 23-31 X X 352 32 + 8 22-26 X X X X X CC2651R3 X X X CC2651P3 X X X CC2652R X X X X X 352 80 + 8 31 X CC2652RB X X X X X 352 80 + 8 31 X CC2652R7 X X X X X 704 144 + 8 31 X CC2652P X X X X X X 352 80 + 8 26 X CC2652P7 X X X X X X 704 144 + 8 26 X X X X X X X X X X 352 32 + 8 32 CC2652RSIP X X X X X X 352 80 + 8 32 X CC2652PSIP X X X X X X 352 80 + 8 30 X Submit Document Feedback 16.9 x 11.0 QFM (29) 15 7 x 7 QFM (59) 20+8 7 x 7 QFM (73) GPIO 128 CC2651R3SIPA X X RAM + Cache (KB) X X FLASH (KB) X Taiwan X Korea X Japan CE X RER (UK) FCC/IC External CC2650MODA +10 dBm PA ZigBee X Module PACKAGE SIZE CERTIFICATIONS Bluetooth® LE RADIO SUPPORT X Integrated ANTENNA 6 Wi-SUN® Wireless M-Bus 2.4 GHz Prop. Device Sub-1 GHz Prop. RADIO SUPPORT X Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 7 Terminal Configuration and Functions DIO_31 GND DIO_18 39 37 36 35 34 33 32 31 30 29 5 DIO_19 GND DIO_20 4 DIO_21 RESET_N DIO_22 3 DIO_23 DIO_28 DIO_24 2 VDDS DIO_27 VDDS_PU 1 DIO_25 DIO_26 39 7.1 Pin Diagram CC2651R3SIPA 53 54 55 52 59 56 51 58 57 6 28 DIO_17 27 DIO_16 26 JTAG_TCKC 25 JTAG_TMSC 24 DIO_15 23 DIO_14 22 DIO_13 21 DIO_12 20 DIO_11 19 DIO_10 GND GND 12 17 NC GND 13 16 ANT_GND 50 49 48 47 46 45 44 43 42 41 15 40 14 DIO_9 18 DIO_8 11 DIO_7 GND DIO_6 10 DIO_5 X32K_Q1 DIO_4 9 DIO_3 X32K_Q2 DIO_2 8 DIO_1 DIO_30 DIO_0 7 GND DIO_29 RF INT_ANT 2.4 GHz PCB Antenna Figure 7-1. MOU (7-mm × 7-mm) Pinout, 0.5-mm Pitch (Top View) The following I/O pins marked in Figure 7-1 in bold have high-drive capabilities: • • • • • • Pin 25, JTAG_TMSC Pin 27, DIO_16 Pin 28, DIO_17 Pin 46, DIO_5 Pin 47, DIO_6 Pin 48, DIO_7 The following I/O pins marked in Figure 7-1 in italics have analog capabilities: • • • • • • • • Pin 1, DIO_26 Pin 2, DIO_27 Pin 3, DIO_28 Pin 7, DIO_29 Pin 8, DIO_30 Pin 35, DIO_23 Pin 36, DIO_24 Pin 39, DIO_25 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 7 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 7.2 Signal Descriptions – SIPA Package Table 7-1. Signal Descriptions – SIPA Package PIN NAME I/O TYPE DESCRIPTION ANT_GND 16 — — DIO_0 41 I/O Digital GPIO DIO_1 42 I/O Digital GPIO DIO_10 19 I/O Digital GPIO DIO_11 20 I/O Digital GPIO DIO_12 21 I/O Digital GPIO DIO_13 22 I/O Digital GPIO DIO_14 23 I/O Digital GPIO DIO_15 24 I/O Digital GPIO DIO_16 27 I/O Digital GPIO, JTAG_TDO, high-drive capability DIO_17 28 I/O Digital GPIO, JTAG_TDI, high-drive capability DIO_18 30 I/O Digital GPIO DIO_19 31 I/O Digital GPIO DIO_2 43 I/O Digital GPIO DIO_20 32 I/O Digital GPIO DIO_21 33 I/O Digital GPIO DIO_22 34 I/O Digital GPIO DIO_23 35 I/O Digital or Analog GPIO, analog capability DIO_24 36 I/O Digital or Analog GPIO, analog capability DIO_25 39 I/O Digital or Analog GPIO, analog capability DIO_26 1 I/O Digital or Analog GPIO, analog capability DIO_27 2 I/O Digital or Analog GPIO, analog capability DIO_28 3 I/O Digital or Analog GPIO, analog capability DIO_29 7 I/O Digital or Analog GPIO, analog capability DIO_3 44 I/O Digital DIO_30 8 I/O Digital or Analog DIO_31(1) 29 I/O Digital Supports only peripheral functionality. Does not support general purpose I/O functionality. DIO_4 45 I/O Digital GPIO DIO_5 46 I/O Digital GPIO, high-drive capability DIO_6 47 I/O Digital GPIO, high-drive capability DIO_7 48 I/O Digital GPIO, high-drive capability DIO_8 49 I/O Digital GPIO DIO_9 50 I/O Digital GPIO GND 5 — — GND GND 6 — — GND GND 11 — — GND GND 12 — — GND GND 13 — — GND GND 18 — — GND GND 40 — — GND GND 51-59 — — GND RF RF connection to integral PCB antenna INT_ANT 8 NO. 15 Antenna GND GPIO GPIO, analog capability Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Table 7-1. Signal Descriptions – SIPA Package (continued) PIN NAME NO. I/O TYPE DESCRIPTION JTAG_TCKC 26 I/O Digital JTAG_TCKC JTAG_TMSC 25 I/O Digital JTAG_TMSC, high-drive capability NC 17 — — RESET_N 4 I Digital RF 14 — RF VDDS 37 I/O Digital 1.8-V to 3.8-V main SIP supply VDSS_PU 38 — Power Power to reset internal pullup resistor X32K_Q1 10 — — 32-kHz crystal oscillator pin 1 X32K_Q2 9 — — 32-kHz crystal oscillator pin 2 (1) No Connect Reset, active low. Internal pullup resistor to VDDS_PU 50 ohm RF port PORT_ID = 0x00 is not supported. See the SimpleLink™ CC13x1x3, CC26x1x3 Wireless MCU Technical Reference Manual for further details. 7.3 Connections for Unused Pins and Modules Table 7-2. Connections for Unused Pins – SIPA Package FUNCTION GPIO 32.768-kHz crystal No Connects (1) SIGNAL NAME DIO_n PIN NUMBER ACCEPTABLE PRACTICE(1) PREFERRED PRACTICE(1) 1-3 7-8 19-24 27-36 39 41-50 NC or GND NC NC NC NC NC X32K_Q2 9 X32K_Q1 10 NC 17 NC = No connect Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 9 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8 Specifications 8.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) (2) VDDS(3) MIN MAX –0.3 4.1 V –0.3 VDDS + 0.3, max 4.1 V –0.3 VDDR + 0.3, max 2.25 V Voltage scaling enabled –0.3 VDDS Voltage scaling disabled, internal reference –0.3 1.49 Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9 Supply voltage Voltage on any digital pin(4) (5) Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2 Vin Voltage on ADC input Input level, RF pin Tstg (1) (2) (3) (4) (5) 5 Storage temperature –40 UNIT V dBm 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to ground, unless otherwise noted. VDDS_DCDC, VDDS2 and VDDS3 must be at the same potential as VDDS. Including analog capable DIOs. Injection current is not supported on any GPIO pin 8.2 ESD Ratings VESD (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) VALUE UNIT All pins ±2000 V All pins ±500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process 8.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Operating ambient temperature(1) –40 105 °C Operating supply voltage (VDDS) 1.8 3.8 V Rising supply voltage slew rate 0 100 mV/µs Falling supply voltage slew rate 0 20 mV/µs (1) For thermal resistance characteristics refer to Section 8.8. 8.4 Power Supply and Modules over operating free-air temperature range (unless otherwise noted) PARAMETER MIN VDDS Power-on-Reset (POR) threshold TYP MAX UNIT 1.1 - 1.55 V VDDS Brown-out Detector (BOD) Rising threshold 1.77 V VDDS Brown-out Detector (BOD), before initial boot (1) Rising threshold 1.70 V VDDS Brown-out Detector (BOD) Falling threshold 1.75 V (1) 10 Brown-out Detector is trimmed at initial boot, value is kept until device is reset by a POR reset or the RESET_N pin Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.5 Power Consumption - Power Modes When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V with DC/DC enabled unless otherwise noted. PARAMETER TEST CONDITIONS TYP UNIT Core Current Consumption Reset. RESET_N pin asserted or VDDS below power-on-reset threshold 150 Shutdown. No clocks running, no retention 100 RTC running, CPU, 32KB RAM and (partial) register retention. RCOSC_LF 0.8 µA RTC running, CPU, 32KB RAM and (partial) register retention XOSC_LF 0.9 µA RTC running, CPU, 32KB RAM and (partial) register retention. RCOSC_LF 2.4 µA RTC running, CPU, 32KB RAM and (partial) register retention. XOSC_LF 2.6 µA Idle Supply Systems and RAM powered RCOSC_HF 650 µA Active MCU running CoreMark at 48 MHz RCOSC_HF 2.91 mA Peripheral power domain Delta current with domain enabled 56 Serial power domain Delta current with domain enabled 5.0 RF Core Delta current with power domain enabled, clock enabled, RF core idle 144 µDMA Delta current with clock enabled, module is idle 68.6 Timers Delta current with clock enabled, module is idle(3) 102 I2C Delta current with clock enabled, module is idle 12.1 I2S Delta current with clock enabled, module is idle 30.8 SSI Delta current with clock enabled, module is idle 71.7 UART Delta current with clock enabled, module is idle(1) 147 CRYPTO (AES) Delta current with clock enabled, module is idle(2) 28.1 TRNG Delta current with clock enabled, module is idle 27.1 Reset and Shutdown Standby without cache retention Icore Standby with cache retention nA Peripheral Current Consumption Iperi (1) (2) (3) µA Only one UART running Only one SSI running Only one GPTimer running Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 11 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.6 Power Consumption - Radio Modes When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V with DC/DC enabled unless otherwise noted. PARAMETER TEST CONDITIONS Radio receive current Radio transmit current 2.4 GHz PA (Bluetooth Low Energy) TYP UNIT 2440 MHz 6.7 mA 0 dBm output power setting 2440 MHz 7.7 mA +5 dBm output power setting 2440 MHz 10 mA 8.7 Nonvolatile (Flash) Memory Characteristics Over operating free-air temperature range and VDDS = 3.0 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP Flash sector size MAX 8 UNIT KB Supported flash erase cycles before failure, full bank(1) (5) 30 k Cycles Supported flash erase cycles before failure, single sector(2) 60 k Cycles Maximum number of write operations per row before sector erase(3) 83 Flash retention 105 °C Flash sector erase current Average delta current Average delta current, 4 bytes at a time Flash write time(4) 4 bytes at a time (4) (5) mA 10 30k cycles Flash write current (3) Years 10.7 Zero cycles Flash sector erase time(4) (1) (2) 11.4 Write Operations ms 4000 ms 6.2 mA 21.6 ms A full bank erase is counted as a single erase cycle on each sector Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k cycles Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number of write operations per row is reached. This number is dependent on Flash aging and increases over time and erase cycles Aborting flash during erase or program modes is not a safe operation. 8.8 Thermal Resistance Characteristics PACKAGE THERMAL MOU (SIP) METRIC(1) UNIT 59 PINS RθJA Junction-to-ambient thermal resistance 48.7 °C/W(2) RθJC(top) Junction-to-case (top) thermal resistance 12.4 °C/W(2) RθJB Junction-to-board thermal resistance 32.2 °C/W(2) ψJT Junction-to-top characterization parameter 0.40 °C/W(2) ψJB Junction-to-board characterization parameter 32.0 °C/W(2) (1) (2) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. °C/W = degrees Celsius per watt. 8.9 RF Frequency Bands Over operating free-air temperature range (unless otherwise noted). PARAMETER Frequency bands 12 MIN 2360 Submit Document Feedback TYP MAX UNIT 2500 MHz Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.10 Antenna Characteristics When measured on the LP-CC2651R3SIPA LaunchPad design with Tc = 25 °C. PARAMETER TEST CONDITIONS Polarization MIN TYP MAX UNIT Linear Peak Gain 2.4 GHz Band Efficiency 2.4 GHz Band 3.5 70% dBi dBi Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 13 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.11 Bluetooth Low Energy - Receive (RX) When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with DC/DC enabled unless otherwise noted. All measurements are performed conducted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 125 kbps (LE Coded) Receiver sensitivity Differential mode. BER = 10–3 –103 dBm Receiver saturation Differential mode. BER = 10–3 >5 dBm Frequency error tolerance Difference between the incoming carrier frequency and the internally generated carrier frequency > (–300 / 300) kHz Data rate error tolerance Difference between incoming data rate and the internally generated data rate (37-byte packets) > (–320 / 240) ppm Data rate error tolerance Difference between incoming data rate and the internally generated data rate (255-byte packets) > (–125 / 125) ppm Co-channel rejection(1) Wanted signal at –79 dBm, modulated interferer in channel, BER = 10–3 Selectivity, ±1 MHz(1) –1.5 dB Wanted signal at –79 dBm, modulated interferer at ±1 MHz, BER = 10–3 8 / 4.5(2) dB Selectivity, ±2 MHz(1) Wanted signal at –79 dBm, modulated interferer at ±2 MHz, BER = 10–3 44 / 39(2) dB Selectivity, ±3 MHz(1) Wanted signal at –79 dBm, modulated interferer at ±3 MHz, BER = 10–3 46 / 44(2) dB Selectivity, ±4 MHz(1) Wanted signal at –79 dBm, modulated interferer at ±4 MHz, BER = 10–3 44 / 46(2) dB Selectivity, ±6 MHz(1) Wanted signal at –79 dBm, modulated interferer at ≥ ±6 MHz, BER = 10–3 48 / 44(2) dB Selectivity, ±7 MHz Wanted signal at –79 dBm, modulated interferer at ≥ ±7 MHz, BER = 10–3 51 / 45(2) dB Selectivity, Image frequency(1) Wanted signal at –79 dBm, modulated interferer at image frequency, BER = 10–3 39 dB Selectivity, Image frequency ±1 MHz(1) Note that Image frequency + 1 MHz is the Co- channel –1 MHz. Wanted signal at –79 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10–3 4.5 / 44 (2) dB 500 kbps (LE Coded) Receiver sensitivity Differential mode. BER = 10–3 –99 dBm Receiver saturation Differential mode. BER = 10–3 >5 dBm Frequency error tolerance Difference between the incoming carrier frequency and the internally generated carrier frequency > (–300 / 300) kHz Data rate error tolerance Difference between incoming data rate and the internally generated data rate (37-byte packets) > (–450 / 450) ppm Data rate error tolerance Difference between incoming data rate and the internally generated data rate (255-byte packets) > (–175 / 175) ppm Co-channel rejection(1) Wanted signal at –72 dBm, modulated interferer in channel, BER = 10–3 Selectivity, ±1 MHz(1) –3.5 dB Wanted signal at –72 dBm, modulated interferer at ±1 MHz, BER = 10–3 8 / 4(2) dB Selectivity, ±2 MHz(1) Wanted signal at –72 dBm, modulated interferer at ±2 MHz, BER = 10–3 44 / 37(2) dB Selectivity, ±3 MHz(1) Wanted signal at –72 dBm, modulated interferer at ±3 MHz, BER = 10–3 46 / 42(2) dB Selectivity, ±4 MHz(1) Wanted signal at –72 dBm, modulated interferer at ±4 MHz, BER = 10–3 45 / 43(2) dB Selectivity, ±6 MHz(1) Wanted signal at –72 dBm, modulated interferer at ≥ ±6 MHz, BER = 10–3 46 / 45(2) dB Selectivity, ±7 MHz Wanted signal at –72 dBm, modulated interferer at ≥ ±7 MHz, BER = 10–3 49 / 45(2) dB Selectivity, Image frequency(1) Wanted signal at –72 dBm, modulated interferer at image frequency, BER = 10–3 37 dB Selectivity, Image frequency ±1 MHz(1) Note that Image frequency + 1 MHz is the Co- channel –1 MHz. Wanted signal at –72 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10–3 4 / 46(2) dB 14 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with DC/DC enabled unless otherwise noted. All measurements are performed conducted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 1 Mbps (LE 1M) Receiver sensitivity Differential mode. BER = 10–3 –96 dBm Receiver saturation Differential mode. BER = 10–3 >5 dBm Frequency error tolerance Difference between the incoming carrier frequency and the internally generated carrier frequency > (–350 / 350) kHz Data rate error tolerance Difference between incoming data rate and the internally generated data rate (37-byte packets) > (–750 / 750) ppm Co-channel rejection(1) Wanted signal at –67 dBm, modulated interferer in channel, BER = 10–3 Selectivity, ±1 MHz(1) –6 dB Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10–3 7 / 4(2) dB Selectivity, ±2 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±2 MHz,BER = 10–3 40 / 33(2) dB Selectivity, ±3 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10–3 36 / 41(2) dB Selectivity, ±4 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10–3 40 / 45(2) dB Selectivity, ±5 MHz or more(1) Wanted signal at –67 dBm, modulated interferer at ≥ ±5 MHz, BER = 10–3 40 dB Selectivity, image frequency(1) Wanted signal at –67 dBm, modulated interferer at image frequency, BER = 10–3 33 dB Selectivity, image frequency ±1 MHz(1) Note that Image frequency + 1 MHz is the Co- channel –1 MHz. Wanted signal at –67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10–3 4 / 41(2) dB Out-of-band blocking(3) 30 MHz to 2000 MHz –10 dBm Out-of-band blocking 2003 MHz to 2399 MHz –18 dBm Out-of-band blocking 2484 MHz to 2997 MHz –12 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –2 dBm Intermodulation Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level –42 dBm Spurious emissions, 30 to 1000 MHz Measurement in a 50-Ω single-ended load. < –59 dBm Spurious emissions, 1 to 12.75 GHz Measurement in a 50-Ω single-ended load. < –47 dBm RSSI dynamic range 70 dB RSSI accuracy ±4 dB 2 Mbps (LE 2M) Receiver sensitivity Differential mode. Measured at SMA connector, BER = 10–3 –91 dBm Receiver saturation Differential mode. Measured at SMA connector, BER = 10–3 >5 dBm Frequency error tolerance Difference between the incoming carrier frequency and the internally generated carrier frequency > (–500 / 500) kHz Data rate error tolerance Difference between incoming data rate and the internally generated data rate (37-byte packets) > (–700 / 750) ppm Co-channel rejection(1) Wanted signal at –67 dBm, modulated interferer in channel,BER = 10–3 Selectivity, ±2 MHz(1) –7 dB Wanted signal at –67 dBm, modulated interferer at ±2 MHz, Image frequency is at –2 MHz, BER = 10–3 8 / 4(2) dB Selectivity, ±4 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10–3 36 / 36(2) dB Selectivity, ±6 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±6 MHz, BER = 10–3 37 / 36(2) dB Selectivity, image frequency(1) Wanted signal at –67 dBm, modulated interferer at image frequency, BER = 10–3 4 dB Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 15 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with DC/DC enabled unless otherwise noted. All measurements are performed conducted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Selectivity, image frequency ±2 MHz(1) Note that Image frequency + 2 MHz is the Co-channel. Wanted signal at –67 dBm, modulated interferer at ±2 MHz from image frequency, BER = 10–3 Out-of-band blocking(3) 30 MHz to 2000 MHz –16 dBm Out-of-band blocking 2003 MHz to 2399 MHz –21 dBm Out-of-band blocking 2484 MHz to 2997 MHz –15 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –12 dBm Intermodulation Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2408 and 2414 MHz respectively, at the given power level –38 dBm (1) (2) (3) 16 –7 / 36(2) dB Numbers given as I/C dB X / Y, where X is +N MHz and Y is –N MHz Excluding one exception at Fwanted / 2, per Bluetooth Specification Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.12 Bluetooth Low Energy - Transmit (TX) When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with DC/DC enabled unless otherwise noted. All measurements are performed conducted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT General Parameters Max output power Differential mode, delivered to a single-ended 50 Ω load through a balun 5 dBm Output power programmable range Differential mode, delivered to a single-ended 50 Ω load through a balun 26 dB Spurious emissions and harmonics Spurious emissions f < 1 GHz, outside restricted bands < –36 dBm f < 1 GHz, restricted bands ETSI < –54 dBm f < 1 GHz, restricted bands FCC < –55 dBm < –42 dBm Second harmonic < –42 dBm Third harmonic < –42 dBm f > 1 GHz, including harmonics Harmonics +5 dBm setting Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 17 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.13 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with DC/DC enabled unless otherwise noted. All measurements are performed conducted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT General Parameters Receiver sensitivity PER = 1% –99 dBm Receiver saturation PER = 1% >5 dBm Adjacent channel rejection Wanted signal at –82 dBm, modulated interferer at ±5 MHz, PER = 1% 36 dB Alternate channel rejection Wanted signal at –82 dBm, modulated interferer at ±10 MHz, PER = 1% 57 dB Channel rejection, ±15 MHz or more Wanted signal at –82 dBm, undesired signal is IEEE 802.15.4 modulated channel, stepped through all channels 2405 to 2480 MHz, PER = 1% 59 dB Blocking and desensitization, 5 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 57 dB Blocking and desensitization, 10 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 63 dB Blocking and desensitization, 20 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 63 dB Blocking and desensitization, 50 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 66 dB Blocking and desensitization, –5 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 60 dB Blocking and desensitization, –10 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 60 dB Blocking and desensitization, –20 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 63 dB Blocking and desensitization, –50 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1% 65 dB Spurious emissions, 30 MHz to 1000 MHz Measurement in a 50-Ω single-ended load –66 dBm Spurious emissions, 1 GHz to 12.75 GHz Measurement in a 50-Ω single-ended load –53 dBm Frequency error tolerance Difference between the incoming carrier frequency and the internally generated carrier frequency > 350 ppm Symbol rate error tolerance Difference between incoming symbol rate and the internally generated symbol rate > 1000 ppm RSSI dynamic range 95 dB RSSI accuracy ±4 dB 18 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.14 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX When measured on the CC2651RSIPA-EM reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with DC/DC enabled unless otherwise noted. All measurements are performed conducted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT General Parameters Max output power Differential mode, delivered to a single-ended 50-Ω load through a balun 5 dBm Output power programmable range Differential mode, delivered to a single-ended 50-Ω load through a balun 25 dB Spurious emissions and harmonics f < 1 GHz, outside restricted bands Spurious emissions (1) < -36 dBm < -47 dBm < -55 dBm f > 1 GHz, including harmonics < –42 dBm Second harmonic < -42 dBm Third harmonic < -42 dBm f < 1 GHz, restricted bands ETSI f < 1 GHz, restricted bands FCC Harmonics +5 dBm setting IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) Error vector magnitude (1) +5 dBm setting 2 % To meet the FCC 15.247 Part 15 (US) Band Edge requirement, Channel 26 is reduced by 3 dBm when using the integrated antenna. When using the external antenna option, Channel 26 output power is reduding by 4 dBm, with a max allowable antenna gain of 3.3 dBi. 8.15 Timing and Switching Characteristics 8.15.1 Reset Timing PARAMETER MIN RESET_N low duration TYP MAX UNIT 1 µs 8.15.2 Wakeup Timing Measured over operating free-air temperature with VDDS = 3.0 V (unless otherwise noted). The times listed here do not include software overhead. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MCU, Reset to Active(1) 850 - 3000 µs MCU, Shutdown to Active(1) 850 - 3000 µs MCU, Standby to Active 160 µs MCU, Active to Standby 36 µs MCU, Idle to Active 14 µs (1) The wakeup time is dependent on remaining charge on VDDR capacitor when starting the device, and thus how long the device has been in Reset or Shutdown before starting up again. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 19 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.15.3 Clock Specifications 8.15.3.1 48 MHz Crystal Oscillator (XOSC_HF) Measured on a Texas Instruments reference design with integrated 48 MHz crystal including parameters based on external manufacturer's crystal specification at Tc = 25 °C, VDDS = 3.0 V at initial time, unless otherwise noted. PARAMETER MIN TYP Crystal frequency Start-up time(1) Crystal frequency tolerance(2) UNIT MHz 200 µs -16 18 ppm -4 2 ppm/year Crystal aging(2) (1) (2) MAX 48 Start-up time using the TI-provided power driver. Start-up time may increase if driver is not used. External manufacturer's crystal specification 8.15.3.2 48 MHz RC Oscillator (RCOSC_HF) Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. MIN TYP MAX UNIT Frequency 48 MHz Uncalibrated frequency accuracy ±1 % Calibrated frequency accuracy(1) ±0.25 % 5 µs Start-up time (1) Accuracy relative to the calibration source (XOSC_HF) 8.15.3.3 32.768 kHz Crystal Oscillator (XOSC_LF) Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. MIN Crystal frequency ESR Equivalent series resistance CL Crystal load capacitance (1) TYP MAX 32.768 6 UNIT kHz 30 100 kΩ 7(1) 12 pF Default load capacitance using TI reference designs including parasitic capacitance. Crystals with different load capacitance may be used. 8.15.3.4 32 kHz RC Oscillator (RCOSC_LF) Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. MIN Frequency Calibrated RTC variation(1) Calibrated periodically against XOSC_HF(2) Temperature coefficient. (1) (2) (3) 20 TYP MAX UNIT 32.8 kHz ±600(3) ppm 50 ppm/°C When using RCOSC_LF as source for the low frequency system clock (SCLK_LF), the accuracy of the SCLK_LF-derived Real Time Clock (RTC) can be improved by measuring RCOSC_LF relative to XOSC_HF and compensating for the RTC tick speed. This functionality is available through the TI-provided Power driver. TI driver software calibrates the RTC every time XOSC_HF is enabled. Some device's variation can exceed 1000 ppm. Further calibration will not improve variation. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.15.4 Synchronous Serial Interface (SSI) Characteristics 8.15.4.1 Synchronous Serial Interface (SSI) Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER NO. PARAMETER MIN TYP UNIT 65024 System Clocks (2) S1 tclk_per SSIClk cycle time S2(1) tclk_high SSIClk high time 0.5 tclk_per S3(1) tclk_low SSIClk low time 0.5 tclk_per (1) (2) 12 MAX Refer to SSI timing diagrams Figure 8-1, Figure 8-2, and Figure 8-3. When using the TI-provided Power driver, the SSI system clock is always 48 MHz. S1 S2 SSIClk S3 SSIFss SSITx SSIRx MSB LSB 4 to 16 bits Figure 8-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement S2 S1 SSIClk S3 SSIFss SSITx MSB LSB 8-bit control SSIRx 0 MSB LSB 4 to 16 bits output data Figure 8-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 21 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 S1 S2 SSIClk (SPO = 0) S3 SSIClk (SPO = 1) SSITx (Controller) MSB SSIRx (Peripheral) MSB LSB LSB SSIFss Figure 8-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1 8.15.5 UART 8.15.5.1 UART Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER MIN UART rate 22 TYP MAX 3 Submit Document Feedback UNIT MBaud Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.16 Peripheral Characteristics 8.16.1 ADC 8.16.1.1 Analog-to-Digital Converter (ADC) Characteristics Tc = 25 °C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1) Performance numbers require use of offset and gain adjustements in software by TI-provided ADC drivers. PARAMETER TEST CONDITIONS Input voltage range MIN TYP 0 Resolution ksps –0.24 LSB Gain error Internal 4.3 V equivalent reference(2) 7.14 LSB >–1 LSB ±4 LSB INL Integral nonlinearity Internal 4.3 V equivalent reference(2), 200 kSamples/s, 9.6 kHz input tone reference(2), Internal 4.3 V equivalent 9.6 kHz input tone, DC/DC enabled Effective number of bits Total harmonic distortion Signal-to-noise and distortion ratio 200 kSamples/s, 9.8 9.8 VDDS as reference, 200 kSamples/s, 9.6 kHz input tone 10.1 Internal reference, voltage scaling disabled, 32 samples average, 200 kSamples/s, 300 Hz input tone 11.1 Internal reference, voltage scaling disabled, 14-bit mode, 200 kSamples/s, 300 Hz input tone (5) 11.3 Internal reference, voltage scaling disabled, 15-bit mode, 200 kSamples/s, 300 Hz input tone (5) 11.6 Internal 4.3 V equivalent reference(2), 200 kSamples/s, 9.6 kHz input tone –65 VDDS as reference, 200 kSamples/s, 9.6 kHz input tone –70 Internal reference, voltage scaling disabled, 32 samples average, 200 kSamples/s, 300 Hz input tone –72 Internal 4.3 V equivalent reference(2), 200 kSamples/s, 9.6 kHz input tone 60 VDDS as reference, 200 kSamples/s, 9.6 kHz input tone 63 Internal reference, voltage scaling disabled, 32 samples average, 200 kSamples/s, 300 Hz input tone 68 Internal 4.3 V equivalent 9.6 kHz input tone SFDR Bits 200 Internal 4.3 V equivalent reference(2) Differential nonlinearity SINAD, SNDR V Offset DNL(4) THD UNIT 12 Sample Rate ENOB MAX VDDS reference(2), 200 kSamples/s, 73 Internal reference, voltage scaling disabled, 32 samples average, 200 kSamples/s, 300 Hz input tone 75 Serial conversion, time-to-output, 24 MHz clock Current consumption Internal 4.3 V equivalent reference(2) Current consumption VDDS as reference Reference voltage Equivalent fixed internal reference (input voltage scaling enabled). For best accuracy, the ADC conversion should be initiated through the TI-RTOS API in order to include the gain/ offset compensation factors stored in FCFG1 Reference voltage Fixed internal reference (input voltage scaling disabled). For best accuracy, the ADC conversion should be initiated through the TI-RTOS API in order to include the gain/offset compensation factors stored in FCFG1. This value is derived from the scaled value (4.3 V) as follows: Vref = 4.3 V × 1408 / 4095 Reference voltage Reference voltage dB dB 70 Spurious-free dynamic range VDDS as reference, 200 kSamples/s, 9.6 kHz input tone Conversion time Bits 50 dB Clock Cycles 0.42 mA 0.6 mA 4.3(2) (3) V 1.48 V VDDS as reference, input voltage scaling enabled VDDS V VDDS as reference, input voltage scaling disabled VDDS / 2.82(3) V Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 23 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Tc = 25 °C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1) Performance numbers require use of offset and gain adjustements in software by TI-provided ADC drivers. PARAMETER Input impedance (1) (2) (3) (4) (5) 24 TEST CONDITIONS 200 kSamples/s, voltage scaling enabled. Capacitive input, Input impedance depends on sampling frequency and sampling time MIN TYP >1 MAX UNIT MΩ Using IEEE Std 1241-2010 for terminology and test methods Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V Applied voltage must be within Absolute Maximum Ratings (see Section 8.1) at all times No missing codes ADC_output = Σ(4n samples ) >> n, n = desired extra bits Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.16.2 DAC 8.16.2.1 Digital-to-Analog Converter (DAC) Characteristics Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT General Parameters Resolution VDDS FDAC Supply voltage Clock frequency Voltage output settling time 8 1.8 3.8 External Load(4), any VREF, pre-charge OFF, DAC charge-pump OFF 2.0 3.8 Any load, VREF = DCOUPL, pre-charge ON 2.6 3.8 Buffer ON (recommended for external load) 16 250 Buffer OFF (internal load) 16 1000 VREF = VDDS, buffer OFF, internal load VREF = VDDS, buffer ON, external capacitive load = 20 13 pF(3) 20 External resistive load 200 10 kHz pF MΩ Short circuit current 400 VDDS = 3.8 V, DAC charge-pump OFF 50.8 VDDS = 3.0 V, DAC charge-pump ON 51.7 VDDS = 3.0 V, DAC charge-pump OFF 53.2 Max output impedance Vref = VDDS, buffer ON, CLK 250 VDDS = 2.0 V, DAC charge-pump ON kHz VDDS = 2.0 V, DAC charge-pump OFF V 1 / FDAC 13.8 External capacitive load ZMAX Bits Any load, any VREF, pre-charge OFF, DAC charge-pump ON 48.7 µA kΩ 70.2 VDDS = 1.8 V, DAC charge-pump ON 46.3 VDDS = 1.8 V, DAC charge-pump OFF 88.9 Internal Load - Continuous Time Comparator / Low Power Clocked Comparator Differential nonlinearity VREF = VDDS, load = Continuous Time Comparator or Low Power Clocked Comparator FDAC = 250 kHz ±1 Differential nonlinearity VREF = VDDS, load = Continuous Time Comparator or Low Power Clocked Comparator FDAC = 16 kHz ±1.2 DNL Offset error(2) Load = Continuous Time Comparator Offset error(2) Load = Low Power Clocked Comparator Max code output voltage variation(2) Load = Continuous Time Comparator LSB(1) VREF = VDDS = 3.8 V ±0.64 VREF = VDDS= 3.0 V ±0.81 VREF = VDDS = 1.8 V ±1.27 VREF = DCOUPL, pre-charge ON ±3.43 VREF = DCOUPL, pre-charge OFF ±2.88 VREF = ADCREF ±2.37 VREF = VDDS= 3.8 V ±0.78 VREF = VDDS = 3.0 V ±0.77 VREF = VDDS= 1.8 V ±3.46 VREF = DCOUPL, pre-charge ON ±3.44 VREF = DCOUPL, pre-charge OFF ±4.70 VREF = ADCREF ±4.11 VREF = VDDS = 3.8 V ±1.53 VREF = VDDS = 3.0 V ±1.71 VREF = VDDS= 1.8 V ±2.10 VREF = DCOUPL, pre-charge ON ±6.00 VREF = DCOUPL, pre-charge OFF ±3.85 VREF = ADCREF ±5.84 LSB(1) LSB(1) LSB(1) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 25 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. PARAMETER Max code output voltage variation(2) Load = Low Power Clocked Comparator Output voltage range(2) Load = Continuous Time Comparator Output voltage range(2) Load = Low Power Clocked Comparator TEST CONDITIONS MIN TYP VREF = VDDS= 3.8 V ±2.92 VREF =VDDS= 3.0 V ±3.06 VREF = VDDS= 1.8 V ±3.91 VREF = DCOUPL, pre-charge ON ±7.84 VREF = DCOUPL, pre-charge OFF ±4.06 VREF = ADCREF ±6.94 VREF = VDDS = 3.8 V, code 1 0.03 VREF = VDDS = 3.8 V, code 255 3.62 VREF = VDDS= 3.0 V, code 1 0.02 VREF = VDDS= 3.0 V, code 255 2.86 VREF = VDDS= 1.8 V, code 1 0.01 VREF = VDDS = 1.8 V, code 255 1.71 VREF = DCOUPL, pre-charge OFF, code 1 0.01 VREF = DCOUPL, pre-charge OFF, code 255 1.21 VREF = DCOUPL, pre-charge ON, code 1 1.27 VREF = DCOUPL, pre-charge ON, code 255 2.46 VREF = ADCREF, code 1 0.01 VREF = ADCREF, code 255 1.41 VREF = VDDS = 3.8 V, code 1 0.03 VREF = VDDS= 3.8 V, code 255 3.61 VREF = VDDS= 3.0 V, code 1 0.02 VREF = VDDS= 3.0 V, code 255 2.85 VREF = VDDS = 1.8 V, code 1 0.01 VREF = VDDS = 1.8 V, code 255 1.71 VREF = DCOUPL, pre-charge OFF, code 1 0.01 VREF = DCOUPL, pre-charge OFF, code 255 1.21 VREF = DCOUPL, pre-charge ON, code 1 1.27 VREF = DCOUPL, pre-charge ON, code 255 2.46 VREF = ADCREF, code 1 0.01 VREF = ADCREF, code 255 1.41 MAX UNIT LSB(1) V V External Load INL Integral nonlinearity DNL Differential nonlinearity Offset error Max code output voltage variation 26 VREF = VDDS, FDAC = 250 kHz ±1 VREF = DCOUPL, FDAC = 250 kHz ±1 VREF = ADCREF, FDAC = 250 kHz ±1 VREF = VDDS, FDAC = 250 kHz ±1 VREF = VDDS= 3.8 V ±0.20 VREF = VDDS= 3.0 V ±0.25 VREF = VDDS = 1.8 V ±0.45 VREF = DCOUPL, pre-charge ON ±1.55 VREF = DCOUPL, pre-charge OFF ±1.30 VREF = ADCREF ±1.10 VREF = VDDS= 3.8 V ±0.60 VREF = VDDS= 3.0 V ±0.55 VREF = VDDS= 1.8 V ±0.60 VREF = DCOUPL, pre-charge ON ±3.45 VREF = DCOUPL, pre-charge OFF ±2.10 VREF = ADCREF ±1.90 Submit Document Feedback LSB(1) LSB(1) LSB(1) LSB(1) Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. PARAMETER Output voltage range Load = Low Power Clocked Comparator (1) (2) (3) (4) TEST CONDITIONS MIN TYP VREF = VDDS = 3.8 V, code 1 0.03 VREF = VDDS = 3.8 V, code 255 3.61 VREF = VDDS = 3.0 V, code 1 0.02 VREF = VDDS= 3.0 V, code 255 2.85 VREF = VDDS= 1.8 V, code 1 0.02 VREF = VDDS = 1.8 V, code 255 1.71 VREF = DCOUPL, pre-charge OFF, code 1 0.02 VREF = DCOUPL, pre-charge OFF, code 255 1.20 VREF = DCOUPL, pre-charge ON, code 1 1.27 VREF = DCOUPL, pre-charge ON, code 255 2.46 VREF = ADCREF, code 1 0.02 VREF = ADCREF, code 255 1.42 MAX UNIT V 1 LSB (VREF 3.8 V/3.0 V/1.8 V/DCOUPL/ADCREF) = 14.10 mV/11.13 mV/6.68 mV/4.67 mV/5.48 mV Includes comparator offset A load > 20 pF will increases the settling time Keysight 34401A Multimeter Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 27 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.16.3 Temperature and Battery Monitor 8.16.3.1 Temperature Sensor Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP Resolution MAX UNIT 2 °C Accuracy -40 °C to 0 °C ±5.0 °C Accuracy 0 °C to 105 °C ±2.5 °C 3.6 °C/V Supply voltage (1) coefficient(1) The temperature sensor is automatically compensated for VDDS variation when using the TI-provided driver. 8.16.3.2 Battery Monitor Measured on a Texas Instruments reference design with Tc = 25 °C, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Resolution MAX 25 Range 1.8 Integral nonlinearity (max) Accuracy TYP mV 3.8 V 23 mV 22.5 mV Offset error -32 mV Gain error -1 % 28 VDDS = 3.0 V UNIT Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.16.4 Comparators 8.16.4.1 Continuous Time Comparator Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS Input voltage range(1) TYP 0 Offset Measured at VDDS / 2 Decision time Step from –10 mV to 10 mV Current consumption Internal reference (1) MIN MAX UNIT VDDS V ±5 mV 0.78 µs 8.6 µA The input voltages can be generated externally and connected throughout I/Os or an internal reference voltage can be generated using the DAC 8.16.5 Current Source 8.16.5.1 Programmable Current Source Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS Current source programmable output range (logarithmic range) Resolution MIN TYP MAX 0.25 - 20 µA 0.25 µA Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA UNIT 29 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.16.6 GPIO 8.16.6.1 GPIO DC Characteristics PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TA = 25 °C, VDDS = 1.8 V GPIO VOH at 8 mA load IOCURR = 2, high-drive GPIOs only 1.56 V GPIO VOL at 8 mA load IOCURR = 2, high-drive GPIOs only 0.24 V GPIO VOH at 4 mA load IOCURR = 1 1.59 V GPIO VOL at 4 mA load IOCURR = 1 0.21 V GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 73 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 19 µA GPIO low-to-high input transition, with hysteresis IH = 1, transition voltage for input read as 0 → 1 1.08 V GPIO high-to-low input transition, with hysteresis IH = 1, transition voltage for input read as 1 → 0 0.73 V GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.35 V GPIO VOH at 8 mA load IOCURR = 2, high-drive GPIOs only 2.59 V GPIO VOL at 8 mA load IOCURR = 2, high-drive GPIOs only 0.42 V GPIO VOH at 4 mA load IOCURR = 1 2.63 V GPIO VOL at 4 mA load IOCURR = 1 0.40 V GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 282 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 110 µA GPIO low-to-high input transition, with hysteresis IH = 1, transition voltage for input read as 0 → 1 1.97 V GPIO high-to-low input transition, with hysteresis IH = 1, transition voltage for input read as 1 → 0 1.55 V GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.42 V TA = 25 °C, VDDS = 3.0 V TA = 25 °C, VDDS = 3.8 V TA = 25 °C VIH Lowest GPIO input voltage reliably interpreted as a High VIL Highest GPIO input voltage reliably interpreted as a Low 30 Submit Document Feedback 0.8*VDDS V 0.2*VDDS V Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.17 Typical Characteristics All measurements in this section are done with Tc = 25 °C and VDDS = 3.0 V, unless otherwise noted. See Recommended Operating Conditions, Section 8.3, for device limits. Values exceeding these limits are for reference only. 8.17.1 MCU Current Running CoreMark, SCLK_HF = 48 MHz RCOSC 80 kB RAM Retention, no Cache Retention, RTC ON, SCLK_LF - 32 kHz XOSC 7 5 4.7 6 4.4 5 Current [uA] Current [mA] 4.1 3.8 3.5 3.2 4 3 2 2.9 2.6 1 2.3 2 1.8 0 -40 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 -25 -10 5 20 35 50 65 80 95 105 Temperature [ oC] 3.8 Voltage [V] Figure 8-5. Standby Mode (MCU) Current vs. Temperature Figure 8-4. Active Mode (MCU) Current vs. Supply Voltage (VDDS) 8.17.2 RX Current 7.6 11 7.5 10.5 7.4 10 7.3 9.5 9 7.1 Current [mA] Current [mA] 7.2 7 6.9 6.8 6.7 8 7.5 7 6.5 6.6 6 6.5 5.5 6.4 5 6.3 6.2 -40 8.5 -25 -10 5 20 35 50 65 80 95 105 4.5 1.8 2 Temperature [ oC] 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 Voltage [V] Figure 8-6. RX Current vs. Temperature (BLE 1 Mbps, 2.44 GHz) Figure 8-7. RX Current vs. Supply Voltage (VDDS) (BLE 1 Mbps, 2.44 GHz) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 31 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.3 9.15 9 8.85 8.7 8.55 8.4 8.25 8.1 7.95 7.8 7.65 7.5 7.35 7.2 7.05 6.9 6.75 6.6 6.45 6.3 -40 Current [mA] Current [mA] 8.17.3 TX Current -25 -10 5 20 35 50 65 80 95 105 11.2 11.05 10.9 10.75 10.6 10.45 10.3 10.15 10 9.85 9.7 9.55 9.4 9.25 9.1 8.95 8.8 8.65 8.5 8.35 8.2 -40 -25 -10 5 Temperature [ oC] 20 35 50 65 80 95 105 Temperature [ oC] Figure 8-8. TX Current vs. Temperature (BLE 1 Mbps, 2.44 GHz, 0 dBm) Figure 8-9. TX Current vs. Temperature (BLE 1 Mbps, 2.44 GHz, +5 dBm) 13 16 12 15 14 Current [mA] Current [mA] 11 10 9 13 12 11 8 10 7 6 1.8 9 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 8 1.8 2 2.2 Voltage [V] 2.6 2.8 3 3.2 3.4 3.6 3.8 Voltage [V] Figure 8-10. TX Current vs. Supply Voltage (VDDS) (BLE 1 Mbps, 2.44 GHz, 0 dBm) 32 2.4 Figure 8-11. TX Current vs. Supply Voltage (VDDS) (BLE 1 Mpbs, 2.44 GHz, +5 dBm) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Table 8-1 shows the typical TX current and output power for different output power settings. Table 8-1. Typical TX Current and Output Power CC2651R3SIPA at 2.4 GHz, VDDS = 3.0 V (Measured on CC2651RSIPA-EM) txPower TX Power Setting (SmartRF Studio) Typical Output Power [dBm] Typical Current Consumption [mA] 0xA42E 5 4.4 9.9 0x601E 4 3.3 9.2 0x246A 3 2.5 8.8 0x2E64 2 1.7 8.4 0x20A5 1 0.7 8.0 0x20A2 0 0.1 7.7 0x08DC -5 -4.6 6.4 0x00D2 -10 -9.0 5.6 0x00CD -15 -12.7 5.2 0x00C8 -20 -18.2 4.8 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 33 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 -101 -103 -100 -102 -99 -101 -98 -100 Sensitivity [dBm] Sensitivity [dBm] 8.17.4 RX Performance -97 -96 -95 -99 -98 -97 -94 -96 -93 -95 -92 -94 -91 2.4 2.408 2.416 2.424 2.432 2.44 2.448 2.456 2.464 2.472 -93 2.4 2.48 2.408 2.416 2.424 Frequency [MHz] 2.432 2.44 2.448 2.456 2.464 2.472 2.48 Frequency [MHz] Figure 8-12. Sensitivity vs. Frequency (BLE 1 Mbps, 2.44 GHz) Figure 8-13. Sensitivity vs. Frequency (250 kbps, 2.44 GHz) -90 -91 -91 -92 -93 -92 -94 Sensitivity [dBm] Sensitivity [dBm] -93 -94 -95 -96 -95 -96 -97 -98 -99 -97 -100 -98 -101 -99 -102 -100 -40 -25 -10 5 20 35 50 65 80 95 -103 -40 105 -25 -10 5 o -90 -90 -91 -91 -92 -92 -93 -93 -94 -95 -96 -98 -99 -99 2.6 2.8 3 3.2 3.4 3.6 3.8 -100 1.8 2 Voltage [V] 95 105 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 Voltage [V] Figure 8-16. Sensitivity vs. Supply Voltage (VDDS) (BLE 1 Mbps, 2.44 GHz) 34 80 -96 -98 2.4 65 -95 -97 2.2 50 -94 -97 2 35 Figure 8-15. Sensitivity vs. Temperature (250 kbps, 2.44 GHz) Sensitivity [dBm] Sensitivity [dBm] Figure 8-14. Sensitivity vs. Temperature (BLE 1 Mbps, 2.44 GHz) -100 1.8 20 Temperature [ oC] Temperature [ C] Figure 8-17. Sensitivity vs. Supply Voltage (VDDS) (BLE 1 Mbps, 2.44 GHz, DCDC Off) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 -93 -94 -95 Sensitivity [dBm] -96 -97 -98 -99 -100 -101 -102 -103 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 Voltage [V] Figure 8-18. Sensitivity vs. Supply Voltage (VDDS) (250 kbps, 2.44 GHz) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 35 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -40 Output Power [dBm] Output Power [dBm] 8.17.5 TX Performance -25 -10 5 20 35 50 65 80 95 105 7 6.8 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 -40 -25 -10 5 20 65 80 95 Figure 8-20. Output Power vs. Temperature (BLE 1 Mbps, 2.44 GHz, +5 dBm) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 1.8 7 6.8 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2 2.2 2.4 2.6 2.408 2.416 2.424 2.432 2.44 2.448 2.8 3 3.2 3.4 3.6 3.8 Figure 8-22. Output Power vs. Supply Voltage (VDDS) (BLE 1 Mbps, 2.44 GHz, +5 dBm) Output Power [dBm] 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 2.4 105 Voltage [V] Figure 8-21. Output Power vs. Supply Voltage (VDDS) (BLE 1 Mbps, 2.44 GHz, 0 dBm) Ouptut Power [dBm] 50 Figure 8-19. Output Power vs. Temperature (BLE 1 Mbps, 2.44 GHz, 0 dBm) Voltage [V] 2.456 2.464 2.472 2.48 7 6.8 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 5 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 2.4 2.408 2.416 2.424 2.432 2.44 2.448 2.456 2.464 2.472 2.48 Frequency [MHz] Frequency [MHz] Figure 8-23. Output Power vs. Frequency (BLE 1 Mbps, 2.44 GHz, 0 dBm) 36 35 Temperature [ oC] Output Power [dBm] Output Power [dBm] Temperature [ oC] Figure 8-24. Output Power vs. Frequency (BLE 1 Mbps, 2.44 GHz, +5 dBm) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 8.17.6 ADC Performance 11.4 Vin = 3.0 V Sine wave, Internal reference, Fin = Fs / 10 Internal Reference, No Averaging Internal Unscaled Reference, 14-bit Mode 10.2 11.1 10.15 10.1 ENOB [Bit] ENOB [Bit] 10.8 10.5 10.2 10.05 10 9.95 9.9 9.9 9.85 9.6 0.2 0.3 0.5 0.7 1 2 3 4 5 6 7 8 10 20 9.8 30 40 50 70 100 1 Frequency [kHz] 2 4 5 6 7 8 10 30 40 50 70 100 200 Figure 8-26. ENOB vs. Sampling Frequency Vin = 3.0 V Sine wave, Internal reference, 200 kSamples/s Vin = 3.0 V Sine wave, Internal reference, 200 kSamples/s 2.5 1 2 0.5 1.5 DNL [LSB] 1.5 0 1 -0.5 0.5 -1 0 -1.5 -0.5 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 0 400 800 1200 1600 ADC Code Vin = 1 V, Internal reference, 200 kSamples/s 1.009 1.008 1.008 1.007 1.007 Voltage [V] 1.009 1.006 1.005 1.004 1.002 1.001 1.001 10 20 30 40 4000 1.004 1.002 0 3600 1.005 1.003 -10 3200 1.006 1.003 -20 2800 Vin = 1 V, Internal reference, 200 kSamples/s 1.01 -30 2400 Figure 8-28. DNL vs. ADC Code 1.01 1 -40 2000 ADC Code Figure 8-27. INL vs. ADC Code Voltage [V] 20 Frequency [kHz] Figure 8-25. ENOB vs. Input Frequency INL [LSB] 3 50 60 70 80 90 100 1 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 Voltage [V] Temperature [°C] Figure 8-29. ADC Accuracy vs. Temperature Figure 8-30. ADC Accuracy vs. Supply Voltage (VDDS) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 37 CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 www.ti.com 9 Detailed Description 9.1 Overview Section 4 shows the core modules of the CC2651R3SIPA device. 9.2 System CPU The CC2651R3SIPA SimpleLink™ Wireless MCU contains an Arm® Cortex®-M4 system CPU, which runs the application and the higher layers of radio protocol stacks. The system CPU is the foundation of a high-performance, low-cost platform that meets the system requirements of minimal memory implementation, and low-power consumption, while delivering outstanding computational performance and exceptional system response to interrupts. Its features include the following: • ARMv7-M architecture optimized for small-footprint embedded applications • Arm Thumb®-2 mixed 16- and 32-bit instruction set delivers the high performance expected of a 32-bit Arm core in a compact memory size • Fast code execution permits increased sleep mode time • Deterministic, high-performance interrupt handling for time-critical applications • Single-cycle multiply instruction and hardware divide • Hardware division and fast digital-signal-processing oriented multiply accumulate • Saturating arithmetic for signal processing • Full debug with data matching for watchpoint generation – Data Watchpoint and Trace Unit (DWT) – JTAG Debug Access Port (DAP) – Flash Patch and Breakpoint Unit (FPB) • Trace support reduces the number of pins required for debugging and tracing – Instrumentation Trace Macrocell Unit (ITM) – Trace Port Interface Unit (TPIU) with asynchronous serial wire output (SWO) • Optimized for single-cycle flash memory access • Tightly connected to 8-KB 4-way random replacement cache for minimal active power consumption and wait states • Ultra-low-power consumption with integrated sleep modes • 48 MHz operation • 1.25 DMIPS per MHz 38 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA www.ti.com CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.3 Radio (RF Core) The RF Core is a highly flexible and future proof radio module which contains an Arm Cortex-M0 processor that interfaces the analog RF and base-band circuitry, handles data to and from the system CPU side, and assembles the information bits in a given packet structure. The RF core offers a high level, command-based API to the main CPU that configurations and data are passed through. The Arm Cortex-M0 processor is not programmable by customers and is interfaced through the TI-provided RF driver that is included with the SimpleLink Software Development Kit (SDK). The RF core can autonomously handle the time-critical aspects of the radio protocols, thus offloading the main CPU, which reduces power and leaves more resources for the user application. Several signals are also available to control external circuitry such as RF switches or range extenders autonomously. The various physical layer radio formats are partly built as a software defined radio where the radio behavior is either defined by radio ROM contents or by non-ROM radio formats delivered in form of firmware patches with the SimpleLink SDKs. This allows the radio platform to be updated for support of future versions of standards even with over-the-air (OTA) updates while still using the same silicon. 9.3.1 Bluetooth 5.2 Low Energy The RF Core offers full support for Bluetooth 5.2 Low Energy, including the high-sped 2-Mbps physical layer and the 500-kbps and 125-kbps long range PHYs (Coded PHY) through the TI provided Bluetooth 5.2 stack or through a high-level Bluetooth API. The Bluetooth 5.2 PHY and part of the controller are in radio and system ROM, providing significant savings in memory usage and more space available for applications. The new high-speed mode allows data transfers up to 2 Mbps, twice the speed of Bluetooth 4.2 and five times the speed of Bluetooth 4.0, without increasing power consumption. In addition to faster speeds, this mode offers significant improvements for energy efficiency and wireless coexistence with reduced radio communication time. Bluetooth 5.2 also enables unparalleled flexibility for adjustment of speed and range based on application needs, which capitalizes on the high-speed or long-range modes respectively. Data transfers are now possible at 2 Mbps, enabling development of applications using voice, audio, imaging, and data logging that were not previously an option using Bluetooth low energy. With high-speed mode, existing applications deliver faster responses, richer engagement, and longer battery life. Bluetooth 5.2 enables fast, reliable firmware updates. 9.3.2 802.15.4 (Zigbee) Through a dedicated IEEE radio API, the RF Core supports the 2.4-GHz IEEE 802.15.4-2011 physical layer (2 Mchips per second Offset-QPSK with DSSS 1:8), used in the Zigbee protocol. The 802.15.4 PHY and MAC are in radio and system ROM. TI also provides royalty-free protocol stacks for Zigbee as part of the SimpleLink SDK, enabling a robust end-to-end solution. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 39 CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 www.ti.com 9.4 Memory The up to 352-KB nonvolatile (Flash) memory provides storage for code and data. The flash memory is in-system programmable and erasable. The last flash memory sector must contain a Customer Configuration section (CCFG) that is used by boot ROM and TI provided drivers to configure the device. This configuration is done through the ccfg.c source file that is included in all TI provided examples. The ultra-low leakage system static RAM (SRAM) is a single 32-KB block and can be used for both storage of data and execution of code. Retention of SRAM contents in Standby power mode is enabled by default and included in Standby mode power consumption numbers. To improve code execution speed and lower power when executing code from nonvolatile memory, a 4-way nonassociative 8-KB cache is enabled by default to cache and prefetch instructions read by the system CPU. The cache can be used as a general-purpose RAM by enabling this feature in the Customer Configuration Area (CCFG). The ROM contains a serial (SPI and UART) bootloader that can be used for initial programming of the device. 40 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA www.ti.com CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.5 Cryptography The CC2651R3SIPA device comes with a wide set of cryptography-related hardware accelerators, reducing code footprint and execution time for cryptographic operations. It also has the benefit of being lower power and improves availability and responsiveness of the system because the cryptography operations run in a background hardware thread. The hardware accelerator modules are: • True Random Number Generator (TRNG) module provides a true, nondeterministic noise source for the purpose of generating keys, initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring oscillators that create unpredictable output to feed a complex nonlinear-combinatorial circuit. • Advanced Encryption Standard (AES) with 128 bit key lengths Together with the hardware accelerator module, a large selection of open-source cryptography libraries provided with the Software Development Kit (SDK), this allows for secure and future proof IoT applications to be easily built on top of the platform. The TI provided cryptography drivers are: • Key Agreement Schemes – Elliptic curve Diffie-Hellman with static or ephemeral keys (ECDH and ECDHE) – Elliptic curve Password Authenticated Key Exchange by Juggling (ECJ-PAKE) • Signature Generation – Elliptic curve Diffie-Hellman Digital Signature Algorithm (ECDSA) • Curve Support – Short Weierstrass form (full hardware support), such as: • NIST-P224, NIST-P256, NIST-P384, NIST-P521 • Brainpool-256R1, Brainpool-384R1, Brainpool-512R1 • secp256r1 – Montgomery form (hardware support for multiplication), such as: • Curve25519 • SHA2 based MACs – HMAC with SHA224, SHA256, SHA384, or SHA512 • Block cipher mode of operation – AESCCM – AESGCM – AESECB – AESCBC – AESCBC-MAC • True random number generation Other capabilities, such as RSA encryption and signatures as well as Edwards type of elliptic curves such as Curve1174 or Ed25519, are a provided part of the TI SimpleLink SDK for the CC2651R3SIPA device. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 41 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.6 Timers A large selection of timers are available as part of the CC2651R3SIPA device. These timers are: • Real-Time Clock (RTC) • A 70-bit 3-channel timer running on the 32 kHz low frequency system clock (SCLK_LF) This timer is available in all power modes except Shutdown. The timer can be calibrated to compensate for frequency drift when using the LF RCOSC as the low frequency system clock. If an external LF clock with frequency different from 32.768 kHz is used, the RTC tick speed can be adjusted to compensate for this. When using TI-RTOS, the RTC is used as the base timer in the operating system and should thus only be accessed through the kernel APIs such as the Clock module. By default, the RTC halts when a debugger halts the device. General Purpose Timers (GPTIMER) • The four flexible GPTIMERs can be used as either 4× 32 bit timers or 8× 16 bit timers, all running on up to 48 MHz. Each of the 16- or 32-bit timers support a wide range of features such as one-shot or periodic counting, pulse width modulation (PWM), time counting between edges and edge counting. The inputs and outputs of the timer are connected to the device event fabric, which allows the timers to interact with signals such as GPIO inputs, other timers, DMA and ADC. The GPTIMERs are available in Active and Idle power modes. Radio Timer • A multichannel 32-bit timer running at 4 MHz is available as part of the device radio. The radio timer is typically used as the timing base in wireless network communication using the 32-bit timing word as the network time. The radio timer is synchronized with the RTC by using a dedicated radio API when the device radio is turned on or off. This ensures that for a network stack, the radio timer seems to always be running when the radio is enabled. The radio timer is in most cases used indirectly through the trigger time fields in the radio APIs and should only be used when running the accurate 48 MHz high frequency crystal is the source of SCLK_HF. Watchdog timer The watchdog timer is used to regain control if the system operates incorrectly due to software errors. It is typically used to generate an interrupt to and reset of the device for the case where periodic monitoring of the system components and tasks fails to verify proper functionality. The watchdog timer runs on a 1.5 MHz clock rate and cannot be stopped once enabled. The watchdog timer pauses to run in Standby power mode and when a debugger halts the device. 42 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.7 Serial Peripherals and I/O The SSI is a synchronous serial interfaces that are compatible with SPI, MICROWIRE, and TI's synchronous serial interfaces. The SSIs support both SPI controller and peripheral up to 4 MHz. The SSI modules support configurable phase and polarity. The UARTs implement universal asynchronous receiver and transmitter functions. They support flexible baudrate generation up to a maximum of 3 Mbps. The I2S interface is used to handle digital audio and can also be used to interface pulse-density modulation microphones (PDM). The I2C interface is also used to communicate with devices compatible with the I2C standard. The I2C interface can handle 100 kHz and 400 kHz operation, and can serve as both controller and peripheral. The I/O controller (IOC) controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a programmable pullup and pulldown function, and can generate an interrupt on a negative or positive edge (configurable). When configured as an output, pins can function as either push-pull or open-drain. Five GPIOs have high-drive capabilities, which are marked in bold in Section 7. All digital peripherals can be connected to any digital pin on the device. For more information, see the CC13x1x2, CC26x1x2 SimpleLink™ Wireless MCU Technical Reference Manual. 9.8 Battery and Temperature Monitor A combined temperature and battery voltage monitor is available in the CC2651R3SIPA device. The battery and temperature monitor allows an application to continuously monitor on-chip temperature and supply voltage and respond to changes in environmental conditions as needed. The module contains window comparators to interrupt the system CPU when temperature or supply voltage go outside defined windows. These events can also be used to wake up the device from Standby mode through the Always-On (AON) event fabric. 9.9 µDMA The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to offload data-transfer tasks from the system CPU, thus allowing for more efficient use of the processor and the available bus bandwidth. The µDMA controller can perform a transfer between memory and peripherals. The µDMA controller has dedicated channels for each supported on-chip module and can be programmed to automatically perform transfers between peripherals and memory when the peripheral is ready to transfer more data. Some features of the µDMA controller include the following (this is not an exhaustive list): • • • • Highly flexible and configurable channel operation of up to 32 channels Transfer modes: memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-to-peripheral Data sizes of 8, 16, and 32 bits Ping-pong mode for continuous streaming of data 9.10 Debug The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1) interface. The device boots by default into cJTAG mode and must be reconfigured to use 4-pin JTAG. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 43 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.11 Power Management To minimize power consumption, the CC2651R3SIPA supports a number of power modes and power management features (see Table 9-1). Table 9-1. Power Modes MODE SOFTWARE CONFIGURABLE POWER MODES ACTIVE IDLE STANDBY SHUTDOWN RESET PIN HELD CPU Active Off Off Off Off Flash On Available Off Off Off SRAM On On Retention Off Off Supply System On On Duty Cycled Off Off Register and CPU retention Full Full Partial No No SRAM retention Full Full Full No No 48 MHz high-speed clock (SCLK_HF) XOSC_HF or RCOSC_HF XOSC_HF or RCOSC_HF Off Off Off 32 kHz low-speed clock (SCLK_LF) XOSC_LF or RCOSC_LF XOSC_LF or RCOSC_LF XOSC_LF or RCOSC_LF Off Off Peripherals Available Available Off Off Off Wake-up on RTC Available Available Available Off Off Wake-up on pin edge Available Available Available Available Off Wake-up on reset pin On On On On On Brownout detector (BOD) On On Duty Cycled Off Off Power-on reset (POR) On On On Off Off Watchdog timer (WDT) Available Available Paused Off Off In Active mode, the application system CPU is actively executing code. Active mode provides normal operation of the processor and all of the peripherals that are currently enabled. The system clock can be any available clock source (see Table 9-1). In Idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not clocked and no code is executed. Any interrupt event brings the processor back into active mode. In Standby mode, only the always-on (AON) domain is active. An external wake-up event or RTC event is required to bring the device back to active mode. MCU peripherals with retention do not need to be reconfigured when waking up again, and the CPU continues execution from where it went into standby mode. All GPIOs are latched in standby mode. In Shutdown mode, the device is entirely turned off (including the AON domain), and the I/Os are latched with the value they had before entering shutdown mode. A change of state on any I/O pin defined as a wake from shutdown pin wakes up the device and functions as a reset trigger. The CPU can differentiate between reset in this way and reset-by-reset pin or power-on reset by reading the reset status register. The only state retained in this mode is the latched I/O state and the flash memory contents. Note The power, RF and clock management for the CC2651R3SIPA device require specific configuration and handling by software for optimized performance. This configuration and handling is implemented in the TI-provided drivers that are part of the CC2651R3SIPA software development kit (SDK). Therefore, TI highly recommends using this software framework for all application development on the device. The complete SDK with TI-RTOS (optional), device drivers, and examples are offered free of charge in source code. 44 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.12 Clock Systems The CC2651R3SIPA device has several internal system clocks. The 48 MHz SCLK_HF is used as the main system (MCU and peripherals) clock. This can be driven by the internal 48 MHz RC Oscillator (RCOSC_HF) or in-package 48 MHz crystal (XOSC_HF). Note that the radio operation runs off the included, in-package 48 MHz crystal within the module. SCLK_LF is the 32.768 kHz internal low-frequency system clock. It can be used for the RTC and to synchronize the radio timer before or after Standby power mode. SCLK_LF can be driven by the internal 32.8 kHz RC Oscillator (RCOSC_LF), a 32.768 kHz watch-type crystal, or a clock input on any digital IO. When using a crystal or the internal RC oscillator, the device can output the 32 kHz SCLK_LF signal to other devices, thereby reducing the overall system cost. 9.13 Network Processor Depending on the product configuration, the CC2651R3SIPA device can function as a wireless network processor (WNP - a device running the wireless protocol stack with the application running on a separate host MCU), or as a system-on-chip (SoC) with the application and protocol stack running on the system CPU inside the device. In the first case, the external host MCU communicates with the device using SPI or UART. In the second case, the application must be written according to the application framework supplied with the wireless protocol stack. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 45 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.14 Device Certification and Qualification The CC2651R3SIPA module from TI is certified for FCC, IC/ISED, ETSI/CE, RER (UK), Korea, MIC (Japan), and Taiwan as listed in Table 9-2. Moreover, the module is a Bluetooth Qualified Design by the Bluetooth Special Interest Group (Bluetooth SIG). TI Customers that build products based on the TI CC2651R3SIPA module can save in testing cost and time per product family. Note The FCC, IC, Korea, Japan, and Taiwan IDs, as well as the CE, UK, Korea, and Japan markings, must be located in both the user manual and on the packaging. Due to the small size of the module (7 mm x 7 mm), placing the IDs and markings in a type size large enough to be legible without the aid of magnification is impractical. Table 9-2. CC2651R3SIPA List of Certifications Regulatory Body FCC (USA) IC/ISED (Canada) Specification ID (IF APPLICABLE) Part 15C + MPE FCC RF Exposure (Bluetooth) Part 15C + MPE FCC RF Exposure (802.15.4) RSS-102 (MPE) and RSS-247 (Bluetooth) RSS-102 (MPE) and RSS-247 (802.15.4) ZAT-2651R3SIPA 451H-2651R3SIPA EN 300328 v2.2.2 (2019-07) (Bluetooth) — EN 300328 v2.2.2 (2019-07) (802.15.4) — EN 62311:2020 and EN 50655:2017 (MPE) — EN 301 489-1 v2.2.3 (2019-11) — EN 301489-17 v3.2.4 (2020-09) — EN 62368-1:2020/A11:2020 — Korea Clause 2, Article 58-2 of Radio Waves Act. R-C-T3P-2651R3SIPA MIC (Japan) Article 49-20 of ORRE 201-230017 Taiwan NCC LP002 (2020-07-01) CCAF23Y10010T2 ETSI/CE (Europe) & RER (UK) 9.14.1 FCC Certification and Statement CAUTION FCC RF Radiation Exposure Statement: This equipment complies with FCC radiation exposure limits set forth for an uncontrolled environment. End users must follow the specific operating instructions for satisfying RF exposure limits. This transmitter must not be co-located or operating with any other antenna or transmitter. The CC2651R3SIPAT0MOUR module from TI is certified for the FCC as a single-modular transmitter. The module is an FCC-certified radio module that carries a modular grant. You are cautioned that changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate the equipment. This device is planned to comply with Part 15 of the FCC Rules. Operation is subject to the following two conditions: • This device may not cause harmful interference. • This device must accept any interference received, including interference that may cause undesired operation of the device. 46 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.14.2 IC/ISED Certification and Statement CAUTION IC RF Radiation Exposure Statement: To comply with IC RF exposure requirements, this device and its antenna must not be co-located or operating in conjunction with any other antenna or transmitter. Pour se conformer aux exigences de conformité RF canadienne l'exposition, cet appareil et son antenne ne doivent pas étre co-localisés ou fonctionnant en conjonction avec une autre antenne ou transmetteur. The CC2651R3SIPAT0MOUR module from TI is certified for IC as a single-modular transmitter. The CC2651R3SIPA module from TI meets IC modular approval and labeling requirements. The IC follows the same testing and rules as the FCC regarding certified modules in authorized equipment. This device complies with Industry Canada licence-exempt RSS standards. Operation is subject to the following two conditions: • This device may not cause interference. • This device must accept any interference, including interference that may cause undesired operation of the device. Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation est autorisée aux deux conditions suivantes: • L'appareil ne doit pas produire de brouillage • L'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement. 9.14.3 ETSI/CE Certification The CC2651R3SIPAT0MOUR module from TI is CE certified with certifications to the appropriate EU radio and EMC directives summarized in the Declaration of Conformity and evidenced by the CE mark. The module is tested and certified against the Radio Equipment Directive (RED). See the full text of the for the EU Declaration of Conformity for the CC2651R3SIPAT0MOU device. 9.14.4 UK Certification The CC2651R3SIPAT0MOUR module from TI is UK certified with certifications to the appropriate UK radio and EMC directives summarized in the Declaration of Conformity and evidenced by the UK mark. The module is tested and certified against the Radio Equipment Regulations 2017. See the full text of the for the UK Declaration of Conformity for the CC2651R3SIPAT0MOU device. 9.14.5 MIC Certification The CC2651R3SIPAT0MOUR modules from TI is MIC certified against article 49-20 and the relevant articles of the Ordinance Regulating Radio Equipment. Operation is subject to the following condition: • The host system does not contain a wireless wide area network (WWAN) device. 9.14.6 Korea Certification The CC2651R3SIPAT0MOUR modules from TI is Korea certified against article 58-2 and the relevant articles of the Radio Waves Act. In addition it is the responsibility of the OEM to ensure the Korea device, label, and user manual requirements are met per Table 9-3 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 47 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Table 9-3. KCC Label and User Manual Requirements for EOM KCC Label Requirements(1) Information Device(2) (3) Package(2) (3) M M M M User Manual(2) (3) KC Mark KC ID R-C-T3P2651R3SIPA Applicant Name Texas Instruments M, E M, E M, E M, E Product Name CC2651R3SIPA SimpleLink™ Multiprotocol 2.4-GHz Wireless System-in-Package Module with Integrated Antenna & 352-KB Memory Model Name CC2651R3SIPAT0MOUR M, E M, E M, E Manufacturer name Texas Instruments Inc. M,E M,E M,E Manufacturing country Taiwan M, E M, E M, E Manufacturing year 2023 M, E M, E M, E (1) (2) (3) M, E M, E For small products with a maximum area of 400 mm2 or less, and where a label cannot be marked, the label can be attached to the product packaging or only a basic design, or identification code can be marked on the product. M = Mandatory E = OEM integrator can choose to where to place the information 9.14.7 NCC Certification and Statement The CC2651R3SIPAT0MOUR modules from TI is NCC certified against NCC LP002. Operation is subject to the following condition: • 「取得審驗證明之低功率射頻器材，非經核准，公司、商號或使 用者均不得擅自變更頻率、加大功率或變更原 設計之特性及功能。低功率射 頻器材之使用不得影響飛航安全及干擾合法 通信；經發現有干擾現象時，應 立 即停用，並改善至無干擾時方得繼續使用。前述合法通信，指依電信管理 法規定作業之無線電 信。低功率射 頻器材須忍受合法通信或工業、科學及 醫療用電波輻射性電機設備之干擾。」 • "A company, a trade name or an operator may not change frequency, increase power or change the characteristics and functions of the original design without approval for lowpower RF equipment as verified." The use of low-power RF equipment shall not affect the safety of flight and interfere with lawful communication, and shall be immediately deactivation if interference is found and shall be improved to non-interference. The aforementioned legal communication refers to radio communications operating in accordance with the provisions of the Telecommunications Administration Act. Low-power RF equipment is subject to interference from legitimate communications or industrial, scientific and medical radiowave radio-motor equipment.” 「本公司於說明書中提供所有必要資訊以指導使用者/安裝者正確的安裝及操作」。 • "The Company provides all necessary information in the instructions to guide the correct installation and operation of the user/installer." 「平台商應於最終產品本體明顯處標示 本產品內含射頻模組 CCAF23Y10010T2 」。 "The platform provider shall mark it clearly on the body of the final product: This product contains RF module 48 CCAF23Y10010T2" Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 9.15 Module Markings Figure 9-1 shows the top-side marking for the CC2651R3SIPA module. CC2651 R SIPA NNN NNNN Figure 9-1. Top-Side Marking Table 9-4 lists the CC2651R3SIPA module markings. Table 9-4. Module Descriptions MARKING DESCRIPTION CC2651 Generic Part Number R Model SIPA SIPA = Module type, X = pre-release NNN NNNN LTC (Lot Trace Code) 9.16 End Product Labeling The CC2651R3SIPAT0MOUR module complies with the FCC single modular FCC grant, FCC ID: ZAT-2651R3SIPA. The host system using this module must display a visible label indicating the following text: • Contains FCC ID: ZAT-2651R3SIPA The CC2651R3SIPAT0MOUR module complies with the IC single modular IC grant, IC: 451H-2651R3SIPA. The host system using this module must display a visible label indicating the following text: • Contains IC: 451H-2651R3SIPA The CC2651R3SIPAT0MOUR module complies with the EU Directive 2014/53/EU and with the UK Radio Equipment Regulations 2017. The host system using this module must display a visible label with the CE and UKCA markings. The CC2651R3SIPAT0MOUR module is designed to comply with the JP statement, 201-230017. The host system using this module must display a visible label indicating the following text: • Contains transmitter module with certificate number: 201-230017 The CC2651R3SIPAT0MOUR module is designed to comply with Taiwan NCC, CCAF23Y10010T2. The host system using this module must display a visible label indicating the following text: • 本產品內含射頻模組: CCAF23Y10010T2 The CC2651R3SIPAT0MOUR module is designed to comply with Korea statement, R-C-T3P-2651R3SIPA. The host system using this module must display a visible label indicating the following text in addition to the KC marking: • R-C-T3P-2651R3SIPA Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 49 CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 www.ti.com For more information on end product labeling and a sample label, please see section 4 of the OEM Integrators Guide 9.17 Manual Information to the End User The OEM integrator must be aware not to provide information to the end user regarding how to install or remove this RF module in the user’s manual of the end product which integrates this module. The end user manual must include all required regulatory information and warnings as shown in this manual. 50 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 10 Application, Implementation, and Layout Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 10.1 Typical Application Circuit Figure 10-1 shows the typical application schematic using the CC2651R3SIPA module. Note that C15 should be assembled when using the integrated antenna option within the module and when the layout design guidelines in Section 10.4.2 are strictly followed. If the layout guidelines described in Section 10.4.2 cannot be followed, it is recommended to implement the alternate application circuit schematic in Section 10.2 and follow the alternate layout guidelines in Section 10.4.4. If using the external antenna option, C14 should be assembled. In addition, Pin 15 of the module should be connected to GND as shown in Figure 10-2. For the full reference schematic, download the LP-CC2651R3SIPA Design Files. Note The following guidelines are recommended for implementation of the RF design when using an external antenna on the RF path, pin 14: • Ensure an RF path is designed with an impedance of 50 Ω. • Tuning of the antenna impedance π matching network is recommended after manufacturing of the PCB to account for PCB parasitics. • π or L matching and tuning may be required between RF out path, pin 14, and the external connection as shown in Figure 10-2. CC2651R3SIPA Figure 10-1. CC2651R3SIPA Typical Application Schematic Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 51 CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 www.ti.com Figure 10-2. CC2651R3SIPA Typical Application Schematic for External Antenna Connection 52 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Table 10-1 provides the bill of materials for a typical application using the CC2651R3SIPA module with the internal antenna as shown in Figure 10-1, while Table 10-2 provides the bill of materials for a typical application using the CC2651R3SIPA module with an external antenna as shown in Figure 10-2 Table 10-1. Bill of Materials for Internal Antenna Configuration PART REFERENCE VALUE MANUFACTURER PART NUMBER C14, C15, C91(1) 15 pF Murata GRM0335C1E150JA01D Capacitor, ceramic, 15 pF, 50 V, ±5%, C0G/NP0, 0201 C81 12 pF Murata GRT0335C1H120JA02D Capacitor, ceramic, 12 pF, 50 V, ±5%, C0G/NP0, 0201 J7 U.FL Hirose U.FL-R-SMT-1(01) U1 CC2651R3SIPA Texas Instruments CC2651R3SIPAT0MOUR Y6 32.768kHz TAI-SAW TZ1166C (1) DESCRIPTION U.FL (UMCC) connector receptacle, male pin 50 Ω, surface mount solder SimpleLink™ multiprotocol 2.4-GHz wireless MCU with integrated power amplifier and Antenna Crystal, resonator, 32.768kHz, -40oC / +125oC, SMD C15 is placed when using the integrated antenna. C14 is placed when using an external antenna Table 10-2. Bill of Materials for External Antenna Configuration PART REFERENCE VALUE MANUFACTURER PART NUMBER C1, C91 15 pF Murata GRM0335C1E150JA01D Capacitor, ceramic, 15 pF, 50 V, ±5%, C0G/NP0, 0201 C81 12 pF Murata GRT0335C1H120JA02D Capacitor, ceramic, 12 pF, 50 V, ±5%, C0G/NP0, 0201 J1 SMA HUS-TSAN SMA-10V21-TGG U2 CC2651R3SIPA Texas Instruments CC2651R3SIPAT0MOUR Y6 32.768kHz TAI-SAW TZ1166C Crystal, resonator, 32.768kHz, -40oC / +125oC, SMD Z2(1) 15 pF Murata GRM0335C1E150JA01D Capacitor, ceramic, 15 pF, 50 V, ±5%, C0G/NP0, 0201 (1) DESCRIPTION Connector, coax, RF, female, Straight, 1 pin, SMD SimpleLink™ multiprotocol 2.4-GHz wireless MCU with integrated power amplifier and Antenna Z2 is the recommended series matching component to use when using connecting to an SMA connector. Additional Shunt components Z1 and Z3 can be used for additional tuning for external antenna performance. 10.2 Alternate Application Circuit Figure 10-3 shows the alternate application schematic using the CC2651R3SIPA module. This circuit implementation should be used when the 4-layer stackup and layout recommendations in Section 10.4.2 cannot be followed, and thus the alternate layout guidelines in Section 10.4.4 should be followed. Note that C15 should be assembled when using the integrated antenna option within the module. C14 should be assembled if the module is to be used with an external antenna, in which case its recommended to follow the typical application circuit as outlined in Section 10.1. For the full reference schematic, download the LP-CC2651R3SIPA Design Files. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 53 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Figure 10-3. CC2651R3SIPA Alternate Application Schematic 54 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Table 10-3 provides the bill of materials for the alternate application circuit using the CC2651R3SIPA module in Section 10.2. For full operation reference design, see the LP-CC2651R3SIPA Design Files. Table 10-3. Bill of Materials for Alternate Application Schematic PART REFERENCE VALUE MANUFACTURER PART NUMBER C14, C15, C91(1) 15 pF Murata GRM0335C1E150JA01D Capacitor, ceramic, 15 pF, 50 V, ±5%, C0G/NP0, 0201 C81 12 pF Murata GRT0335C1H120JA02D Capacitor, ceramic, 12 pF, 50 V, ±5%, C0G/NP0, 0201 C17, C18(2) Do Not Mount 2.7 nH Murata LQP03TN2N7B02 Inductor, thick film, 2.7 nH, 500 mA, 200 mOhm, ±0.1 nH, 0201 2.2 nH Murata LQP03TG2N2B02 Inductor, thick film, 2.2 nH, 500 mA, 200 mOhm, ±0.1 nH, 0201 J7 U.FL Hirose U.FL-R-SMT-1(01) U.FL (UMCC) connector receptacle, male pin 50 Ω, surface mount solder U1 CC2651R3SIPA Texas Instruments CC2651R3SIPAT0MOUR Y6 32.768kHz TAI-SAW TZ1166C L16(3) (1) (2) (3) DESCRIPTION SimpleLink™ multiprotocol 2.4-GHz wireless MCU with integrated power amplifier and Antenna Crystal, resonator, 32.768kHz, -40oC / +125oC, SMD C15 is placed when using the integrated antenna. C14 is placed when using an external antenna C17 and C18 are optional, but should be place in the design as it allows for additional tuning of the resonance frequency L16 is mounted when using the integrated antenna. The recommended starting value when following the layout recommendation in Section 10.4.4 is 2.7 nH for a 1.6 mm board and 2.2 nH for a 0.8 mm board. 10.3 Device Connections 10.3.1 Reset In order to meet the module power-on-reset requirements, VDDS (Pin 37) and VDDS_PU (Pin 38) should be connected together. If the reset signal is not based upon a power-on-reset and is derived from an external MCU, then VDDS_PU (Pin 38) should be No Connect (NC). Please refer to Figure 10-1 for the recommended circuit implementation. 10.3.2 Unused Pins All unused pins can be left unconnected without the concern of having leakage current. 10.4 PCB Layout Guidelines This section details the PCB guidelines to speed up the PCB design using the CC2651R3SIPA module. The integrator of the CC2651R3SIPA modules must comply with the PCB layout recommendations described in the following subsections to minimize the risk with regulatory certifications for the FCC, IC/ISED, ETSI/CE, and RAR (UK). Moreover, TI recommends customers to follow the guidelines described in this section to achieve similar performance to that obtained with the TI reference design. 10.4.1 General Layout Recommendations Ensure that the following general layout recommendations are followed: • Have a solid ground plane and ground vias under the module for stable system and thermal dissipation. • Do not run signal traces underneath the module on a layer where the module is mounted. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 55 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 10.4.2 Typical RF Layout Recommendations with Integrated Antenna It is critical that the RF section be laid out correctly to ensure optimal module performance. A poor layout can cause low-output power and sensitivity degradation. Figure 10-4 shows the RF placement and routing of the CC2651R3SIPA module with the 2.4-GHz integrated antenna. A: 0.5 mm B: 1.00mm C: 6.23 mm D: 3.2mm E: 0.25 mm F: 26.98 mm G: 10.0 mm Figure 10-4. Module Layout Guidelines Follow these RF layout recommendations for the CC2651R3SIPA module when using the integrated Antenna: • • • Dimensions A thru G in Figure 10-4 must be strictly adhered to for optimal RF performance The module must have a minimum 10-mm ground plane on either side of the module on all layers as shown with dimension G in Figure 10-4 There must be at least on ground-reference plane under the module on the main PCB For the CC2651R3SIPA it is recommended to use 4-layer PCB board with the dimensions A thru G copied on all 4 layers. This will provided for the best antenna bandwidth in the 2.4GHz band. In addition, it s recommended for optimal antenna RF performance that: • • • L1 to L2 layer thickness of 0.175 mm, Overall 4-layer board thickness of 1.6 mm as per the reference design The 4-layer dielectric constant of 4.0 +/- 0.2. Deviation from this will cause a potential detuning of the integrated antenna. 56 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 10.4.3 RF Layout Recommendations with External Antenna When using the external antenna option, it is critical that the RF section be laid out correctly to ensure optimal module performance. A poor layout can cause low-output power and sensitivity degradation. Figure 10-5 shows the RF placement and routing of the CC2651R3SIPA module routed for use with an external SMA connector. Figure 10-5. Module Layout Guidelines with External Antenna Follow these RF layout recommendations for the CC2651R3SIPA module when connecting to an external antenna: • • • • • • • RF traces must have 50-Ω impedance. RF trace bends must be made with gradual curves, and 90° bends must be avoided. RF traces must not have sharp corners. There must be no traces or ground under the antenna section. RF traces must have via stitching on the ground plane beside the RF trace on both sides. RF traces must be as short as possible. The module must be as close to the PCB edge in consideration of the product enclosure and type of antenna being used. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 57 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 10.4.3.1 External Antenna Placement and Routing The antenna is the element used to convert the guided waves on the PCB traces to the free space electromagnetic radiation. The placement and layout of the antenna are the keys to increased range and data rates. Table 10-4 provides a summary of the antenna guidelines to follow with the CC2651R3SIPA module when using the module with an external antenna. Table 10-4. External Antenna Guidelines SR NO. GUIDELINES 1 Place the antenna on an edge of the PCB. 2 Ensure that no signals are routed across the antenna elements on any PCB layer. 3 Most antennas, including the PCB antenna used on the LaunchPad™, require ground clearance on all the layers of the PCB. Ensure that the ground is cleared on inner layers as well. 4 Ensure that there is provision to place matching components for the antenna. These must be tuned for best return loss when the complete board is assembled. Any plastics or casing must also be mounted while tuning the antenna because this can impact the impedance. 5 Ensure that the antenna impedance is 50 Ω because the module is rated to work only with a 50-Ω system. 6 In case of printed antenna, ensure that the simulation is performed with the solder mask in consideration. 7 Ensure that the antenna has a near omnidirectional pattern. Table 10-5 lists the recommended external antennas to use with the CC2651R3SIPA module. Other external antennas may be available for use with the CC2651R3SIPA module. Table 10-5. Recommended Components 58 CHOICE ANTENNA 1 2.4-GHz Inverted F Antenna MANUFACTURER Texas Instruments NOTES Refer to 2.4-GHz Inverted F Antenna for details of the antenna implementation and PCB requirements. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 10.4.3.2 Transmission Line Considerations The RF signal from the module is routed to the antenna using a Coplanar Waveguide with ground (CPW-G) structure. CPW-G structure offers the maximum amount of isolation and the best possible shielding to the RF lines. In addition to the ground on the L1 layer, placing GND vias along the line also provides additional shielding. Figure 10-6 shows a cross section of the coplanar waveguide with the critical dimensions. Figure 10-7 shows the top view of the coplanar waveguide with GND and via stitching. Figure 10-6. Coplanar Waveguide (Cross Section) S W Figure 10-7. CPW With GND and Via Stitching (Top View) Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 59 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 The recommended values for a 4-layer PCB board is provided in Table 10-6. Table 10-6. Recommended PCB Values for 4-Layer Board (L1 to L2 = 0.175 mm) PARAMETER VALUE UNITS W 0.300 mm S 0.500 mm H 0.175 mm 4.4 F/m Er (FR-4 substrate) 10.4.4 Alternate PCB Layout Guidelines The PCB layout guidelines recommended in this section are to be used when the PCB requirements of Section 10.4.2 cannot be strictly followed. This would include deviation from the recommended 4-layer PCB stackup, dielectric constant, and outlined design rules. Figure 10-8 shows the RF placement and routing of the CC2651R3SIPA module with the 2.4-GHz integrated antenna. Figure 10-8. Alternate Module Layout Guidelines Follow these RF layout recommendations for the CC2651R3SIPA module when using the integrated Antenna: • • • • • 60 Dimensions A thru F in Figure 10-8 must be strictly adhered to for optimal RF performance For optimal efficiency of the antenna, its best to have a minimum 10-mm ground plane on either side of the module on all layers as shown with dimension G in Figure 10-8 There must be at least on ground-reference plane under the module on the main PCB The ground loop should only be on the top layer of the board and not on all 4-layers. A π matching network implementation in the ground loop allowing for tuning of the integrated antenna for optimal performance. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 10.5 Reference Designs The following reference designs should be followed closely when implementing designs using the CC2651R3SIPA device. Special attention must be paid to RF component placement, decoupling capacitors and DCDC regulator components, as well as ground connections for all of these. CC2651RSIPA-EM Design Files The CC2651RSIP-EM reference design provides schematic, layout and production files for the characterization board used for deriving the performance number found in this document. LP-CC2651R3SIPA Design Files The CC2651R3SIPA LaunchPad Design Files contain detailed schematics and layouts to build application specific boards using the CC2651R3SIPA device. Sub-1 GHz and 2.4 GHz Antenna Kit for LaunchPad™ Development Kit and SensorTag The antenna kit allows real-life testing to identify the optimal antenna for your application. The antenna kit includes 16 antennas for frequencies from 169 MHz to 2.4 GHz, including: • PCB antennas • Helical antennas • Chip antennas • Dual-band antennas for 868 MHz and 915 MHz combined with 2.4 GHz The antenna kit includes a JSC cable to connect to the Wireless MCU LaunchPad Development Kits and SensorTags. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 61 CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 www.ti.com 10.6 Junction Temperature Calculation This section shows the different techniques for calculating the junction temperature under various operating conditions. For more details, see Semiconductor and IC Package Thermal Metrics. There are three recommended ways to derive the junction temperature from other measured temperatures: 1. From package temperature: T J = ψJT × P + Tcase (1) T J = ψJB × P + Tboard (2) T J = RθJA × P + TA (3) 2. From board temperature: 3. From ambient temperature: P is the power dissipated from the device and can be calculated by multiplying current consumption with supply voltage. Thermal resistance coefficients are found in Section 8.8. Example: Using Equation 3, the temperature difference between ambient temperature and junction temperature is calculated. In this example, we assume a simple use case where the radio is transmitting continuously at 0 dBm output power. Let us assume the ambient temperature is 85 °C and the supply voltage is 3 V. To calculate P, we need to look up the current consumption for Tx at 85 °C in. From the plot, we see that the current consumption is 7.8 mA. This means that P is 7.95 mA × 3 V = 23.85 mW. The junction temperature is then calculated as: T J = 48.7°C W × 23.85mW + TA = 1.2°C + TA As can be seen from the example, the junction temperature is 1.2°C higher than the ambient temperature when running continuous Tx at 85 °C and, thus, well within the recommended operating conditions. For various application use cases current consumption for other modules may have to be added to calculate the appropriate power dissipation. For example, the MCU may be running simultaneously as the radio, peripheral modules may be enabled, etc. Typically, the easiest way to find the peak current consumption, and thus the peak power dissipation in the device, is to measure as described in Measuring CC13xx and CC26xx current consumption. 62 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 11 Environmental Requirements and SMT Specifications 11.1 PCB Bending The PCB follows IPC-A-600J for PCB twist and warpage < 0.75% or 7.5 mil per inch. 11.2 Handling Environment 11.2.1 Terminals The product is mounted with motherboard through land-grid array (LGA). To prevent poor soldering, do not make skin contact with the LGA portion. 11.2.2 Falling The mounted components will be damaged if the product falls or is dropped. Such damage may cause the product to malfunction. 11.3 Storage Condition 11.3.1 Moisture Barrier Bag Before Opened A moisture barrier bag must be stored in a temperature of less than 30°C with humidity under 85% RH. The calculated shelf life for the dry-packed product will be 24 months from the date the bag is sealed. 11.3.2 Moisture Barrier Bag Open Humidity indicator cards must be blue, < 30%. 11.4 PCB Assembly Guide The wireless MCU modules are packaged in a substrate base Leadless Quad Flatpack (QFM) package. The modules are designed with pull back leads for easy PCB layout and board mounting. 11.4.1 PCB Land Pattern & Thermal Vias We recommended a solder mask defined land pattern to provide a consistent soldering pad dimension in order to obtain better solder balancing and solder joint reliability. PCB land pattern are 1:1 to module soldering pad dimension. Thermal vias on PCB connected to other metal plane are for thermal dissipation purpose. It is critical to have sufficient thermal vias to avoid device thermal shutdown. Recommended vias size are 0.2mm and position not directly under solder paste to avoid solder dripping into the vias. 11.4.2 SMT Assembly Recommendations The module surface mount assembly operations include: • • • • • • Screen printing the solder paste on the PCB Monitor the solder paste volume (uniformity) Package placement using standard SMT placement equipment X-ray pre-reflow check - paste bridging Reflow X-ray post-reflow check - solder bridging and voids Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 63 CC2651R3SIPA SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 www.ti.com 11.4.3 PCB Surface Finish Requirements A uniform PCB plating thickness is key for high assembly yield. For an electroless nickel immersion gold finish, the gold thickness should range from 0.05 µm to 0.20 µm to avoid solder joint embrittlement. Using a PCB with Organic Solderability Preservative (OSP) coating finish is also recommended as an alternative to Ni-Au. 11.4.4 Solder Stencil Solder paste deposition using a stencil-printing process involves the transfer of the solder paste through predefined apertures with the application of pressure. Stencil parameters such as aperture area ratio and the fabrication process have a significant impact on paste deposition. Inspection of the stencil prior to placement of package is highly recommended to improve board assembly yields. 11.4.5 Package Placement Packages can be placed using standard pick and place equipment with an accuracy of ±0.05 mm. Component pick and place systems are composed of a vision system that recognizes and positions the component and a mechanical system that physically performs the pick and place operation. Two commonly used types of vision systems are: • A vision system that locates a package silhouette • A vision system that locates individual pads on the interconnect pattern The second type renders more accurate placements but tends to be more expensive and time consuming. Both methods are acceptable since the parts align due to a self-centering features of the solder joint during solder reflow. It is recommended to avoid solder bridging to 2 mils into the solder paste or with minimum force to avoid causing any possible damage to the thinner packages. 11.4.6 Solder Joint Inspection After surface mount assembly, transmission X-ray should be used for sample monitoring of the solder attachment process. This identifies defects such as solder bridging, shorts, opens, and voids. It is also recommended to use side view inspection in addition to X-rays to determine if there are "Hour Glass" shaped solder and package tilting existing. The "Hour Glass" solder shape is not a reliable joint. 90° mirror projection can be used for side view inspection. 11.4.7 Rework and Replacement TI recommends removal of modules by rework station applying a profile similar to the mounting process. Using a heat gun can sometimes cause damage to the module by overheating. 11.4.8 Solder Joint Voiding TI recommends to control solder joint voiding to be less than 30% (per IPC-7093). Solder joint voids could be reduced by baking of components and PCB, minimized solder paste exposure duration, and reflow profile optimization. 11.5 Baking Conditions Products require baking before mounting if: • Humidity indicator cards read > 30% • Temp < 30°C, humidity < 70% RH, over 96 hours Baking condition: 90°C, 12 to 24 hours Baking times: 1 time 64 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 11.6 Soldering and Reflow Condition • • • • • • Heating method: Conventional convection or IR convection Temperature measurement: Thermocouple d = 0.1 mm to 0.2 mm CA (K) or CC (T) at soldering portion or equivalent method Solder paste composition: SAC305 Allowable reflow soldering times: 2 times based on the reflow soldering profile (see Figure 11-1) Temperature profile: Reflow soldering will be done according to the temperature profile (see Figure 11-1) Peak temperature: 260°C Figure 11-1. Temperature Profile for Evaluation of Solder Heat Resistance of a Component (at Solder Joint) Table 11-1. Temperature Profile Convection or IR(1) Profile Elements Peak temperature range 235 to 240°C typical (260°C maximum) Pre-heat / soaking (150 to 200°C) 60 to 120 seconds Time above melting point 60 to 90 seconds Time with 5°C to peak 30 seconds maximum Ramp up < 3°C / second Ramp down < -6°C / second (1) For details, refer to the solder paste manufacturer's recommendation. Note TI does not recommend the use of conformal coating or similar material on the SimpleLink™ module. This coating can lead to localized stress on the solder connections inside the module and impact the module reliability. Use caution during the module assembly process to the final PCB to avoid the presence of foreign material inside the module. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 65 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 12 Device and Documentation Support TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device, generate code, and develop solutions are listed as follows. 12.1 Device Nomenclature To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and/or date-code. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example, XCC2651R3SIPA is in preview; therefore, an X prefix/identification is assigned). Device development evolutionary flow: X Experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. P Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null Production version of the silicon die that is fully qualified. Production devices have been characterized fully, and the quality and reliability of the device have been demonstrated fully. TI's standard warranty applies. Predictions show that prototype devices (X or P) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used. TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type (for example, RGZ). For orderable part numbers of CC2651R3SIPA devices in the RGZ (7-mm x 7-mm) package type, see the Package Option Addendum of this document, the Device Information in Section 3, the TI website (www.ti.com), or contact your TI sales representative. CC2651 R 3 SIP A T 0 MOU R PREFIX X = Experimental device Blank = Qualified devie R = Large Reel PACKAGE DESIGNATOR MOU = LGA Package DEVICE SimpleLink™ Ultra-Low-Power Wireless MCU PRODUCTION REVISION TEMPERATURE T = 105oC Ambient CONFIGURATION R = Regular P = +10 dBm PA included MODULE SIP = System-in-Package ANTENNA A = Integrated antenna Blank = No antenna FLASH SIZE 3 = 352 kB Figure 12-1. Device Nomenclature 12.2 Tools and Software The CC2651R3SIPA device is supported by a variety of software and hardware development tools. Development Kit CC2651R3SIPA LaunchPad™ Development Kit 66 The CC2651R3SIPA LaunchPad™ Development Kit enables development of highperformance wireless applications that benefit from low-power operation. The kit features the CC2651R3SIPA SimpleLink Wireless system-in-Package, which allows you to quickly evaluate and prototype 2.4-GHz wireless applications such as Bluetooth 5 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Low Energy and Zigbee, plus combinations of these. The kit works with the LaunchPad ecosystem, easily enabling additional functionality like sensors, display and more. Software SimpleLink™ CC13XXCC26XX SDK The SimpleLink CC13xx and CC26xx Software Development Kit (SDK) provides a complete package for the development of wireless applications on the CC13XX / CC26XX family of devices. The SDK includes a comprehensive software package for the CC2651R3SIPA module, including the following protocol stacks: • Bluetooth Low Energy 4 and 5.2 • Thread (based on OpenThread) • Zigbee 3.0 • TI 15.4-Stack - an IEEE 802.15.4-based star networking solution for Sub-1 GHz and 2.4 GHz The SimpleLink CC13XX-CC26XX SDK is part of TI’s SimpleLink MCU platform, offering a single development environment that delivers flexible hardware, software and tool options for customers developing wired and wireless applications. For more information about the SimpleLink MCU Platform, visit http://www.ti.com/simplelink. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 67 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 Code Composer Studio™ Integrated Development Environment (IDE) Code Composer Studio is an integrated development environment (IDE) that supports TI's Microcontroller and Embedded Processors portfolio. Code Composer Studio comprises a suite of tools used to develop and debug embedded applications. It includes an optimizing C/C++ compiler, source code editor, project build environment, debugger, profiler, and many other features. The intuitive IDE provides a single user interface taking you through each step of the application development flow. Familiar tools and interfaces allow users to get started faster than ever before. Code Composer Studio combines the advantages of the Eclipse® software framework with advanced embedded debug capabilities from TI resulting in a compelling feature-rich development environment for embedded developers. CCS has support for all SimpleLink Wireless MCUs and includes support for EnergyTrace™ software (application energy usage profiling). A real-time object viewer plugin is available for TI-RTOS, part of the SimpleLink SDK. Code Composer Studio is provided free of charge when used in conjunction with the XDS debuggers included on a LaunchPad Development Kit. Code Composer Studio™ Cloud IDE Code Composer Studio (CCS) Cloud is a web-based IDE that allows you to create, edit and build CCS and Energia™ projects. After you have successfully built your project, you can download and run on your connected LaunchPad. Basic debugging, including features like setting breakpoints and viewing variable values is now supported with CCS Cloud. IAR Embedded Workbench® for Arm® IAR Embedded Workbench® is a set of development tools for building and debugging embedded system applications using assembler, C and C++. It provides a completely integrated development environment that includes a project manager, editor, and build tools. IAR has support for all SimpleLink Wireless MCUs. It offers broad debugger support, including XDS110, IAR I-jet™ and Segger J-Link™. A real-time object viewer plugin is available for TI-RTOS, part of the SimpleLink SDK. IAR is also supported out-of-the-box on most software examples provided as part of the SimpleLink SDK. A 30-day evaluation or a 32 KB size-limited version is available through iar.com. SmartRF™ Studio SmartRF™ Studio is a Windows® application that can be used to evaluate and configure SimpleLink Wireless MCUs from Texas Instruments. The application will help designers of RF systems to easily evaluate the radio at an early stage in the design process. It is especially useful for generation of configuration register values and for practical testing and debugging of the RF system. SmartRF Studio can be used either as a standalone application or together with applicable evaluation boards or debug probes for the RF device. Features of the SmartRF Studio include: • Link tests - send and receive packets between nodes • Antenna and radiation tests - set the radio in continuous wave TX and RX states • Export radio configuration code for use with the TI SimpleLink SDK RF driver • Custom GPIO configuration for signaling and control of external switches 68 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com CCS UniFlash SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 CCS UniFlash is a standalone tool used to program on-chip flash memory on TI MCUs. UniFlash has a GUI, command line, and scripting interface. CCS UniFlash is available free of charge. 12.2.1 SimpleLink™ Microcontroller Platform The SimpleLink microcontroller platform sets a new standard for developers with the broadest portfolio of wired and wireless Arm® MCUs (System-on-Chip) in a single software development environment. Delivering flexible hardware, software and tool options for your IoT applications. Invest once in the SimpleLink software development kit and use throughout your entire portfolio. Learn more on ti.com/simplelink. 12.3 Documentation Support To receive notification of documentation updates on data sheets, errata, application notes and similar, navigate to the device product folder on ti.com/product/CC2651R3SIPA In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. The current documentation that describes the MCU, related peripherals, and other technical collateral is listed as follows. TI Resource Explorer TI Resource Explorer Software examples, libraries, executables, and documentation are available for your device and development board. Errata CC2651R3SIPA Silicon Errata The silicon errata describes the known exceptions to the functional specifications for each silicon revision of the device and description on how to recognize a device revision. Application Reports All application reports for the CC2651R3SIPA device are found on the device product folder at: ti.com/product/ CC2651R3SIPA/technicaldocuments. Technical Reference Manual (TRM) CC13x1x3, CC26x1x3 SimpleLink™ Wireless MCU TRM The TRM provides a detailed description of all modules and peripherals available in the device family. 12.4 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.5 Trademarks LaunchPad™, Code Composer Studio™, EnergyTrace™, and TI E2E™ are trademarks of Texas Instruments. I-jet™ is a trademark of IAR Systems AB. J-Link™ is a trademark of SEGGER Microcontroller Systeme GmbH. Arm Thumb® is a registered trademark of Arm Limited (or its subsidiaries). Eclipse® is a registered trademark of Eclipse Foundation. IAR Embedded Workbench® is a registered trademark of IAR Systems AB. Windows® is a registered trademark of Microsoft Corporation. All trademarks are the property of their respective owners. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 69 CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 12.6 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.7 Glossary TI Glossary 70 This glossary lists and explains terms, acronyms, and definitions. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA CC2651R3SIPA www.ti.com SWRS278B – FEBRUARY 2022 – REVISED AUGUST 2023 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Note The total height of the module is 1.51 mm. The weight of the CC2651R3SIPA module is typically 0.182 g. Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: CC2651R3SIPA 71 PACKAGE OPTION ADDENDUM www.ti.com 21-Sep-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) CC2651R3SIPAT0MOUR ACTIVE QFM MOU 50 2000 RoHS (In Work) & Green (In Work) ENEPIG Level-3-260C-168 HR -40 to 105 CC2651 R SIPA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of