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CD74HC4051-EP
SCLS464A – SEPTEMBER 2002 – REVISED JANUARY 2015
CD74HC4051-EP Analog Multiplexer and Demultiplexer
1 Features
3 Description
•
The CD74HC4051-EP is a digitally controlled analog
switch that uses silicon gate CMOS technology to
achieve operating speeds similar to LSTTL, with the
low power consumption of standard CMOS integrated
circuits.
1
•
•
•
•
•
•
•
•
•
•
•
•
Controlled Baseline
– One Assembly and Test Site, One Fabrication
Site
Extended Temperature Performance of –55°C to
125°C
Enhanced Diminishing Manufacturing Sources
(DMS) Support
Enhanced Product Change Notification
Qualification Pedigree(1)
Wide Analog Input Voltage Range of ±5 V Max
Low ON-Resistance
– 70 Ω Typical (VCC – VEE = 4.5 V)
– 40 Ω Typical (VCC – VEE = 9 V)
Low Crosstalk Between Switches
Fast Switching and Propagation Speeds
Break-Before-Make Switching
Operation Control Voltage = 2 V to 6 V
Switch Voltage = 0 V to 10 V
High Noise Immunity NIL = 30%, NIH = 30% of
VCC, VCC = 5 V (1)
2 Applications
This analog multiplexer and demultiplexer controls
analog voltages that may vary across the voltage
supply range (that is, VCC to VEE). These bidirectional
switches allow the use of any analog input as an
output and vice versa. The switches have low ONresistance and low OFF leakages. In addition, the
device has an enable control (E) that, when high,
disables all switches to their OFF state.
Device Information(1)
PART NUMBER
CD74HC4051-EP
Functional Block Diagram
CHANNEL I/O
VCC
A7
A6
A5
A4
A3
A2
A1
A0
16
4
2
5
1
12
15
14
13
TG
TG
S0 11
TG
Binary
To
1 of 8
Decoder
With
Enable
S1 10
Logic
Level
Conversion
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
BODY SIZE (NOM)
4.00 mm × 10.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Supports Defense and Aerospace Applications
(1)
PACKAGE
SOIC (16)
S2 9
TG
3
COM OUT/IN A
TG
TG
TG
E
6
TG
8
7
GND
VEE
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CD74HC4051-EP
SCLS464A – SEPTEMBER 2002 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration And Functions ........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
5
5
6
6
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information .................................................
Electrical Characteristics...........................................
Analog Channel Characteristics................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 8
Detailed Description ............................................ 10
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
10
10
10
11
Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Application ................................................. 12
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 15
11.1 Layout Guidelines ................................................. 15
11.2 Layout Example .................................................... 15
12 Device And Documentation Support................. 16
12.1 Trademarks ........................................................... 16
12.2 Electrostatic Discharge Caution ............................ 16
12.3 Glossary ................................................................ 16
13 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
Changes from Original (September 2002) to Revision A
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
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SCLS464A – SEPTEMBER 2002 – REVISED JANUARY 2015
5 Pin Configuration And Functions
D Package
16-Pin SOIC
Top View
CHANNEL I/O A4
CHANNEL I/O A6
COM OUT/IN A
CHANNEL I/O A7
CHANNEL I/O A5
E
VEE
GND
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
VCC
CHANNEL I/O A2
CHANNEL I/O A1
CHANNEL I/O A0
CHANNEL I/O A3
ADDRESS SEL S0
ADDRESS SEL S1
ADDRESS SEL S2
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
A4
1
I/O
Channel 4 input / output
A6
2
I/O
Channel 6 Input / output
A
3
I/O
COM OUT/ IN
A7
4
I/O
Channel 7 Input / Output
A5
5
I/O
Channel 5 Input / Output
Ebar
6
I
Enable input
VEE
7
I
Power input level for incoming Channel
GND
8
I
Power GND
VCC
9
I
Power input level for outgoing Channel
A2
10
I/O
Channel 2 Input / Output
A1
11
I/O
Channel 1 Input / Output
A0
12
I/O
Channel 0 Input / Output
A3
13
I/O
Channel 3 Input / Output
S0
14
I
Address Select Input 0
S1
15
I
Address Select Input 1
S2
15
I
Address Select Input 2
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
VCC – VEE (2)
VCC
Supply voltage
VEE
MIN
MAX
–0.5
10.5
–0.5
7
0.5
–7
UNIT
V
IIK
Input clamp current (VI < –0.5 V or VI > VCC + 0.5 V)
–20
20
mA
IOK
Output clamp current (VO < VEE – 0.5 V or VO > VCC + 0.5 V)
–20
20
mA
Switch current (VI > VEE – 0.5 V or VI < VCC + 0.5 V)
–25
25
mA
Continuous current through VCC or GND
–50
50
mA
0
20
mA
73
°C/W
150
°C
150
°C
IEE
VEE current
θJA
Package thermal impedance (3)
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages referenced to GND unless otherwise specified.
The package thermal impedance is calculated in accordance with JESD 51-7.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions (1)
over operating free-air temperature range (unless otherwise noted)
MIN
VCC
Supply voltage (2)
Supply voltage, VCC – VEE (see Figure 4)
(2)
VEE
Supply voltage, (see
VIH
High-level input voltage
and Figure 5)
VCC = 2 V
V
2 10
10
V
0 –6
–6
V
3.15
Input control voltage
VIS
Analog switch I/O voltage
tt
(1)
(2)
4
Input transition (rise and
fall) time
V
4.2
0.5
VCC = 4.5 V
1.35
VCC = 6 V
VI
UNIT
6
VCC = 2 V
Low-level input voltage
MAX
1.5
VCC = 4.5 V
VCC = 6 V
VIL
NOM
26
V
1.8
0
VCC
V
VEE
VCC
V
VCC = 2 V
0
1000
VCC = 4.5 V
0
500
VCC = 6 V
0
400
ns
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
In certain applications, the external load resistor current may include both VCC and signal-line components. To avoid drawing VCC
current when switch current flows into the transmission gate inputs, the voltage drop across the bidirectional switch must not exceed 0.6
V (calculated from ron values shown in Electrical Characteristics table). No VCC current flows through RL if the switch current flows into
the COM OUT/IN A terminal.
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Recommended Operating Conditions(1) (continued)
over operating free-air temperature range (unless otherwise noted)
MIN
TA
Operating free-air temperature
Cpd
Power dissipation capacitance (3)
(3)
NOM
–55
MAX
125
50
UNIT
°C
pF
Cpd is used to determine the dynamic power consumption, per package.
PD = Cpd VCC2 fI + Σ (CL + CS) VCC2 fO
fO = output frequency
fI = input frequency
CL = output load capacitance
CS = switch capacitance
VCC = supply voltage
6.4 Thermal Information
CD74HC4051-EP
THERMAL METRIC
(1)
D (SOIC)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
81.7
RθJC(top)
Junction-to-case (top) thermal resistance
43.1
RθJB
Junction-to-board thermal resistance
39.2
ψJT
Junction-to-top characterization parameter
10.7
ψJB
Junction-to-board characterization parameter
38.9
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIS = VCC or VEE
ron
IO = 1 mA, VI = VIH or
VIL,
See Figure 1
VIS = VCC to VEE
∆ron
Between any two channels
IIZ
For switch OFF:
When VIS = VCC, VOS = VEE;
When VIS = VEE, VOS = VCC
For switch ON:
All applicable combinations of VIS and VOS voltage
levels,
VI = VIH or VIL
IIL
VI = VCC or GND
ICC
IO = 0, VI = VCC or GND
VEE
VCC
0V
0V
TA = 25°C
MIN
TA = –55°C to 125°C
TYP
MAX
MIN
TYP
MAX
4.5 V
70
160
240
6V
60
140
210
–4.5 V
4.5 V
40
120
180
0V
4.5 V
90
180
270
0V
6V
80
160
240
–4.5 V
4.5 V
45
130
195
0V
4.5 V
10
8.5
UNIT
Ω
Ω
0V
6V
–4.5 V
4.5 V
0V
6V
±0.2
±2
–5 V
5V
±0.4
±4
5
0V
6V
±0.1
±1
When VIS = VEE, VOS =
VCC
0V
6V
8
160
When VIS = VCC, VOS =
VEE
–5 V
5V
16
320
µA
µA
µA
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6.6 Analog Channel Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
CI
Switch input capacitance
CCOM
Common output capacitance
fmax
(1)
(2)
(3)
Minimum switch frequency response
See Figure 6, Figure 2, and
at –3 dB
Sine-wave distortion
See Figure 7
Switch OFF signal feedthrough
See Figure 8, Figure 3 and
VEE
(1) (2)
(2) (3)
VCC
MIN
TYP
MAX
UNIT
5
pF
25
pF
–2.25 V
2.25 V
145
–4.5 V
4.5 V
180
–2.25 V
2.25 V
0.03%
–4.5 V
4.5 V
0.018%
–2.25 V
2.25 V
–73
–4.5 V
4.5 V
–75
MHz
dB
Adjust input voltage to obtain 0 dBm at VOS for fIN = 1 MHz.
VIS is centered at (VCC – VEE)/2.
Adjust input for 0 dBm
6.7 Switching Characteristics
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 9)
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
LOAD
CAPACITANCE
VEE
CL = 15 pF
0V
tpd
IN
OUT
CL = 50 pF
–4.5 V
CL = 15 pF
ten
ADDRESS SEL or
E
0V
OUT
CL = 50 pF
–4.5 V
CL = 15 pF
tdis
ADDRESS SEL or
E
OUT
0V
CL = 50 pF
–4.5 V
CI
6
Control
VCC
TA = 25°C
MIN
TYP
TA = –55°C TO 125°C
MAX
MIN
TYP
UNIT
MAX
5V
4
2V
60
90
4.5 V
12
18
6V
10
15
4.5 V
8
12
5V
19
2V
225
340
4.5 V
45
68
6V
38
57
4.5 V
32
48
5V
19
2V
225
340
4.5 V
45
68
6V
38
57
4.5 V
32
48
10
10
CL = 50 pF
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ns
ns
ns
pF
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6.8 Typical Characteristics
0
120
VCC = 4.5 V
GND = –4.5 V
VEE = –4.5 V
RL = 50 Ω
PIN 12 TO 3
–2
80
V CC – V EE = 4.5 V
dB
ON Resistance – Ω
100
–4
VCC = 2.25 V
GND = –2.25 V
VEE = –2.25 V
RL = 50 Ω
PIN 12 TO 3
60
V CC – V EE = 6 V
–6
40
V CC – VEE = 9 V
–8
20
1
2
3
4
5
6
7
8
–10
10K
9
100K
Input Signal Voltage – V
1M
10M
100M
Frequency – Hz
Figure 1. Typical ON-Resistance vs Input Signal Voltage
Figure 2. Channel On Bandwidth
0
–20
VCC = 2.25 V
GND = –2.25 V
VEE = –2.25 V
RL = 50 Ω
PIN 12 TO 3
dB
–40
–60
VCC = 4.5 V
GND = –4.5 V
VEE = –4.5 V
RL = 50 Ω
PIN 12 TO 3
–80
–100
10K
100K
1M
10M
100M
Frequency – Hz
Figure 3. Channel Off Feedthrough
6.8.1 Recommended Operating Area as a Function of Supply Voltages
8
6
HCT
HC
4
2
(VCC – GND) – V
(VCC – GND) – V
8
6
HCT
HC
4
2
0
0
0
2
4
6
8
10
0
12
(VCC – VEE) – V
–2
–4
–6
–8
(VEE – GND) – V
Figure 4. Supply Operating Region
Figure 5. Supply Operating Region
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7 Parameter Measurement Information
VCC
VCC
VOS
SWITCH
ON
VIS
0.1 µF
50 Ω
dB
METER
10 pF
SINEWAVE
VIS
VIS
VI = VIH
SWITCH
ON
VOS
10 µF
10 kΩ
VCC/2
50 pF
DISTORTION
METER
VCC/2
Figure 6. Frequency-Response Test Circuit
Figure 7. Sine-Wave Distortion Test Circuit
fIS ≥ 1-MHz SINE WAVE
R = 50 Ω
C = 10 pF
VCC
0.1µF
SWITCH
V IS
VC = VIL
V OS
OFF
R
R
VCC/2
VCC/2
C
dB
METER
Figure 8. Switch OFF Signal Feedthrough Test Circuit
8
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Parameter Measurement Information (continued)
VCC
Test
Point
From Output
Under Test
PARAMETER
S1
ten
RL = 1 kΩ
tdis
CL
(see Note A)
S2
S1
S2
tPZH
Open
Closed
tPZL
Closed
Open
tPHZ
Open
Closed
tPLZ
Closed
Open
Open
Open
tpd
VEE
LOAD CIRCUIT
Input
50% VCC
50% VCC
tPLH
tPHL
VCC
VEE
In-Phase
Output
50%
10%
90%
90%
tr
tPHL
Out-of-Phase
Output
90%
VOH
50% VCC
10%
VOL
tf
50% VCC
10%
tf
50%
10%
tr
VOLTAGE WAVEFORMS
PROPAGATION DELAY AND OUTPUT TRANSITION TIMES
50% VCC
0V
tPLZ
≈VCC
Output
Waveform 1
(see Note B)
50% VCC
Output
Waveform 2
(see Note B)
10%
VOL
tPHZ
tPZH
VOH
VOL
50% VCC
tPZL
tPLH
90%
VCC
Output
Control
50% VCC
90%
VOH
≈0 V
VOLTAGE WAVEFORMS
OUTPUT ENABLE AND DISABLE TIMES
NOTES: A. CL includes probe and test-fixture capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. Phase relationships between waveforms were chosen arbitrarily. All input pulses are supplied by generators having the following
characteristics: PRR ≤ 1 MHz, ZO = 50 Ω, tr = 6 ns, tf = 6 ns.
D. For clock inputs, fmax is measured with the input duty cycle at 50%.
E. The outputs are measured one at a time with one input transition per measurement.
F. t PLZ and tPHZ are the same as tdis.
G. tPZL and tPZH are the same as ten.
H. tPLH and tPHL are the same as tpd.
Figure 9. Load Circuit and Voltage Waveforms
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8 Detailed Description
8.1 Overview
The CD74HC4051-EP is a digitally controlled analog switch that uses silicon gate CMOS technology to achieve
operating speeds similar to LSTTL, with the low-power consumption of standard CMOS integrated circuits.
8.2 Functional Block Diagram
CHANNEL I/O
VCC
A7
A6
A5
A4
A3
A2
A1
A0
16
4
2
5
1
12
15
14
13
TG
TG
S0 11
TG
TG
Binary
To
1 of 8
Decoder
With
Enable
S1 10
Logic
Level
Conversion
S2 9
3
COM OUT/IN A
TG
TG
TG
E
6
TG
8
7
GND
VEE
8.3 Feature Description
This analog multiplexer and demultiplexer controls analog voltages that may vary across the voltage supply
range (that is, VCC to VEE). These bidirectional switches allow the use of any analog input as an output and vice
versa. The switches have low ON-resistance and low OFF leakages. In addition, the device has an enable
control (E) that, when high, disables all switches to their OFF state.
10
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8.4 Device Functional Modes
Table 1. Function Table
INPUTS
E
S2
S1
S0
ON CHANNEL
(S)
L
L
L
L
L
L
L
L
H
L
L
L
L
H
H
H
H
X
L
L
H
H
L
L
H
H
X
L
H
L
H
L
H
L
H
X
A0
A1
A2
A3
A4
A5
A6
A7
None
3
COM
13
Y0
14
Y1
11
S0
15
12
10
S1
1
5
9
Y2
Y3
Y4
Y5
S2
2
Y6
4
6
Y7
EN
Figure 10. Logic Diagram (Positive Logic)
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 TTL-to-HC Interface
TTL output voltages and HC input voltages are incompatible, especially between the TTL high-level output
voltage (VOH) and the HC high-level input voltage (VIH). This problem can be solved in two different ways. The
first solution is to provide pullup resistors at the TTL outputs to ensure an adequate high-level TTL output
voltage. A alternative method requires the use of level shifters.
9.2 Typical Application
+5 V
Rp
Figure 11. Typical Application Schematic TTL-to-HC Interface Using Open-Collector Output.
9.2.1 Design Requirements
Interfacing TTL open-collector outputs to HC-CMOS inputs requires design of pullup circuit balanced with drive
capability to achieve timing and VOL-HC input specifications. Similar technique can be applied when using opendrain outputs.
9.2.2 Detailed Design Procedure
Using pullup resistors to accommodate TTL output signals to interface with HC input circuits (see Figure 11), the
design engineer must choose the resistance that is appropriate for the application. The minimum value of the
resistor is determined by the maximum current IOL that a TTL circuit can supply at the low-level output (VOL).
V max - VOLmin
Rp min = CC
IOL + n ´ IIL
where
•
•
n is the number of HC inputs to be driven
IIL is their input current
(1)
IIL, having a value of only a few nanoamperes, is negligible in all calculations.
In the case of a SN74ALS03, Equation 2 defines Rpmin:
5.5V - 0.4V
= 640W
Rp min =
8mA
(2)
To calculate the upper limit of this resistor, a sufficient VIH high level must be ensured.
V - VIH min
Rp max = CC
n ´ IIH
(3)
In this situation, the input current of HC devices is negligible and very high values also are obtained.
12
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Typical Application (continued)
When calculating the maximum allowable resistance, it is important to ensure that the maximum allowable rise
time (tr = 500 ns) at the HC input is not exceeded. Equation 4 then applies:
VIH = VCC (1 - e
-t
Rp ´C
)
where
•
C is the total load capacitance in the circuit
(4)
C is composed of the output capacitance of the driving gate (approximately 10 pF), the total input capacitances
of gates to be driven (approximately 5 pF each), and the line capacitance (approximately 1 pF/cm). The actual
value is calculated by solving the equation for Rp:
-t
Rp =
3.5V
C ´ ln(1 )
5V
(5)
Assuming the total capacitance, C, is 30 pF, the maximum resistor is:
-500ns
Rp =
= 14kW
3.5V
30pF ´ ln(1 )
5V
(6)
Faster rise times result in lower impedance and more power consumption. The previous calculation is based on
the assumption that the driving gate has an open collector. Conditions become more satisfactory, however, when
a gate with totem-pole output (that is, SN74ALS00) is used. In that case, the gate output provides the voltage to
be brought up to the value VOH = 2.7 V in less than 10 ns (the rise time of the TTL signal). The pullup resistor
only has to pull the level to 3.5 V within the desired time. According to the previous formula, and with a required
rise time of tr = 50 ns, the resistor is defined by Equation 7:
-50ns - 10ns
Rp max =
= 3.12kW
3.5V - 2.7 V
30pF ´ ln(1 )
5V - 2.7V
(7)
The upper limiting value of the resistor is primarily dictated by the rise time required. The larger the resistance,
the longer the rise times and propagation delay times. Reducing the resistance increases speed and power
dissipation.
The other method of accommodating TTL signals to HC circuits is accomplished with special level shifters. This
solution is not recommended because the level shifter itself has no inherent logic functions and increases
component and space requirements.
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13
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SCLS464A – SEPTEMBER 2002 – REVISED JANUARY 2015
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Typical Application (continued)
9.2.3 Application Curves
VOH 14K Ohm Pullup 500ns max rise
VOH VOL 640 Ohm Pullup 8ma open collector
6
6
5
5
4
4
Voltage
Voltage
3
3
400mV
2
2
3.5V
1
1
0
0.000002
0.000003
0.000004
0.000005
0.000006
0.000007
Figure 12. VOH VOL 640-Ω Pullup 8-mA Open Collector
14
0
0.00E+00
5.00E-07
1.00E-06
1.50E-06
2.00E-06
Figure 13. VOH 14-kΩ Pullup 500-ns Max Rise
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Product Folder Links: CD74HC4051-EP
CD74HC4051-EP
www.ti.com
SCLS464A – SEPTEMBER 2002 – REVISED JANUARY 2015
10 Power Supply Recommendations
The threshold voltage of a CMOS circuit is determined by the geometry of the input transistors. These transistors
are designed to sink the same input current at the required threshold voltage. The resulting voltage at the output
is equivalent to 50% of the supply voltage VCC. For an HC circuit, the channel width of the P-channel transistor of
the input is approximately twice the value of an N-channel transistor. The purpose is to make both transistors
have the same current characteristics, thus making the threshold voltage of their input at about 50% of the
supply voltage VCC.
11 Layout
11.1 Layout Guidelines
Analog channels inputs and outputs should be routed to optimize system requirements. VCC and VEE should
have local decoupling capacitance placed close to device. Typical Cin values are 100 pF and 0.01 uF per supply
pin.
11.2 Layout Example
Vcc
Vcc
A4
CIN
A6
A2
COM
A1
A7
A0
GND
A5
A3
E
S0
VEE
S1
GND
S2
VEE
CIN
VIAS USED TO CONNECT PINS FOR APPLICATION SPECIFIC CONNECTIONS
Figure 14. Layout Example
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Product Folder Links: CD74HC4051-EP
15
CD74HC4051-EP
SCLS464A – SEPTEMBER 2002 – REVISED JANUARY 2015
www.ti.com
12 Device And Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
CD74HC4051MM96EP
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC4051MEP
V62/03606-01XE
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC4051MEP
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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