CD54HC243, CD74HC243, CD54HCT243, CD74HCT243
SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
CDx4HC243, CDx4HCT243 High-Speed CMOS Logic Quad-Bus Transceiver with
Three-State Outputs
1 Features
2 Description
•
The CDx4HC243 and CDx4HCT243 are quad bus
transceivers with 3-state outputs. The OEA and OEB
inputs control both the high-impedance state as well
as the direction of communication through the device.
•
•
•
•
•
•
•
•
Typical propagation delay (A to B, B to A) of 7ns at
VCC = 5 V, CL = 15pF, TA = 25oC
Three-state outputs
Buffered inputs
Fanout (over temperature range)
– Standard outputs : 10 LSTTL loads
– Bus driver outputs : 15 LSTTL loads
Wide operating temperature range : -55oC to
125oC
Balanced propagation delay and transition times
Significant power reduction compared to LSTTL
logic ICs
HC types
– 2 V to 6 V Operation
– High noise immunity: NIL = 30%, NIH = 30% of
VCC at VCC = 5V
HCT types
– 4.5 V to 5.5 V operation
– Direct LSTTL input logic compatibility, VIL= 0.8
V (Max), VIH = 2 V (Min)
– CMOS input compatibility, Il ≤ 1µA at VOL, VOH
Device Information
(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
CD54HC243F
CDIP (14)
19.55 mm × 6.71 mm
CD74HC243E
PDIP (14)
19.31 mm × 6.35 mm
CD74HC243M
SOIC (14)
8.65 mm × 3.90 mm
CD74HCT243E
PDIP (14)
19.31 mm × 6.35 mm
CD74HCT243M
SOIC (14)
8.65 mm × 3.90 mm
(1)
For all packages see the orderable addendum at the end of
the datasheet.
OEA
OEB
Ax
Bx
1 of 4 Channels
Functional Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CD54HC243, CD74HC243, CD54HCT243, CD74HCT243
www.ti.com
SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
Table of Contents
1 Features............................................................................1
2 Description.......................................................................1
3 Revision History.............................................................. 2
4 Pin Configuration and Functions...................................3
5 Specifications.................................................................. 4
5.1 Absolute Maximum Ratings........................................ 4
5.2 Recommended Operating Conditions.........................4
5.3 Thermal Information....................................................4
5.4 Electrical Characteristics.............................................5
5.5 Switching Characteristics............................................6
6 Parameter Measurement Information............................ 7
7 Detailed Description........................................................8
7.1 Overview..................................................................... 8
7.2 Functional Block Diagram........................................... 8
7.3 Device Functional Modes............................................8
8 Power Supply Recommendations..................................9
9 Layout...............................................................................9
9.1 Layout Guidelines....................................................... 9
10 Device and Documentation Support..........................10
10.1 Documentation Support.......................................... 10
10.2 Receiving Notification of Documentation Updates..10
10.3 Support Resources................................................. 10
10.4 Trademarks............................................................. 10
10.5 Electrostatic Discharge Caution..............................10
10.6 Glossary..................................................................10
11 Mechanical, Packaging, and Orderable
Information.................................................................... 10
3 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (October 2003) to Revision E (March 2022)
Page
• Updated the numbering, formatting, tables, figures, and cross-references throughout the document to reflect
modern data sheet standards............................................................................................................................. 1
2
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
4 Pin Configuration and Functions
J, N, or D Package
14-Pin CDIP, PDIP, or SOIC
Top View
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
5 Specifications
5.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
-0.5
7
UNIT
VCC
Supply voltage
IIK
Input diode current
For VI < -0.5V or VO > VCC + 0.5V
±20
mA
IOK
Output diode current
For VC < -0.5V or VO > VCC + 0.5V
±20
mA
IO
Drian Current, per output
For -0.5V < VO < VCC + 0.5V
±35
mA
IO
Output source or sink current per
output pin
For VO > -0.5V or VO < VCC + 0.5V
±25
mA
Continuous current through VCC or GND
±70
mA
150
°C
Junction temperature
150
°C
Lead temperature (Soldering 10s)(SOIC - Lead Tips Only)
300
°C
Tstg
Storage temperature range
TJ
(1)
V
-65
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
5.2 Recommended Operating Conditions
VCC
Supply voltage range
VI
Input voltage
VO
Output voltage
HC Types
HCT Types
MIN
MAX
2
6
4.5
5.5
0
VCC
V
VCC
V
0
VCC = 2V
tt
TA
Input rise and fall time
UNIT
V
1000
VCC = 4.5V
500
VCC = 6V
400
Temperature Range
-55
125
ns
°C
5.3 Thermal Information
THERMAL METRIC
RθJA
(1)
4
Junction-to-ambient thermal resistance(1)
N (PDIP)
D (SOIC)
14 PINS
14 PINS
UNIT
80
86
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
5.4 Electrical Characteristics
TEST
(1)
CONDITIONS
PARAMETER
VCC (V)
25°C
MIN
TYP
-40°C to 85°C
MAX
MIN
MAX
-55°C to 125°C
MIN
MAX
UNIT
HC TYPES
VIH
VIL
VOH
High-level input voltage
Low-level input voltage
IOH = – 20μA
High-level output voltage
IOH = – 20μA
CMOS loads
IOH = – 20μA
High-level output voltage IOH = – 6mA
TTL loads
IOH = – 7.8mA
2
1.5
1.5
1.5
4.5
3.15
3.15
3.15
6
4.2
4.2
V
4.2
2
0.5
0.5
0.5
4.5
1.35
1.35
1.35
6
1.8
1.8
1.8
2
1.9
1.9
1.9
4.5
4.4
4.4
4.4
6
5.9
5.9
5.9
4.5
3.98
3.84
3.7
6
5.48
5.34
V
V
5.2
IOL = 20μA
2
0.1
0.1
0.1
IOL = 20μA
4.5
0.1
0.1
0.1
IOL = 20μA
6
0.1
0.1
0.1
Low-level output voltage
TTL
IOL = 6mA
4.5
0.26
0.33
0.4
IOL = 7.8mA
6
0.26
0.33
0.4
II
Input leakage current
VCC or GND
6
±0.1
±1
±1
µA
ICC
Supply Current
VCC or GND
6
8
80
160
µA
IOZ
Three-state leakage
current
VIL or VIH
6
±0.5
±0.5
±10
µA
Low-level output voltage
CMOS loads
VOL
V
HCT TYPES
VIH
High-level input voltage
4.5 to 5.5
VIL
Low-level input voltage
4.5 to 5.5
2
2
0.8
2
0.8
V
0.8
V
High-level output voltage
IOH = – 20μA
CMOS loads
4.5
4.4
4.4
4.4
High-level output voltage
IOH = – 6mA
TTL loads
4.5
3.98
3.84
3.7
Low-level output voltage
CMOS loads
IOL = 20μA
4.5
0.1
0.1
0.1
Low-level output voltage
TTL loads
IOL = 6mA
4.5
0.26
0.33
0.4
II
Input leakage current
VCC to GND
5.5
±0.1
±1
±1
µA
ICC
Supply current
VCC or GND
5.5
8
80
160
µA
VOH
VOL
V
One of An or Bn
∆ICC (2) Additional supply current
(3)
One of OEA or
per input pin
OEB
IOZ
(1)
(2)
(3)
Three-state leakage
current
V
VIL or VIH
4.5 to 5.5
100
396
495
539
4.5 to 5.5
100
216
270
294
±0.5
±5
±10
5.5
µA
µA
VI = VIH or VIL, unless otherwise noted.
For dual-supply systems theoretical worst case (VI = 2.4 V, VCC = 5.5 V) specification is 1.8 mA.
Inputs held at VCC – 2.1.
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
5.5 Switching Characteristics
Input tt = 6ns. Unless otherwise specified, CL = 50pF
PARAMETER
VCC (V)
-40°C to
85°C
25°C
TYP
-55°C to
125°C
MAX
MAX
MAX
90
115
135
18
23
27
UNIT
HC TYPES
2
tpd
Propagation delay data to outputs
tPZL, tPZH
Output high-Z, to high level to low level
4.5
7
(1)
6
15
20
23
2
150
190
225
30
38
45
26
33
38
150
190
225
30
38
45
6
26
33
38
2
60
75
90
4.5
12
15
18
6
10
13
15
4.5
12
(1)
6
2
tPHZ, tPLZ
tt
Output high level, output low level to
high-Z
Output transition times
4.5
12
(1)
ns
ns
ns
ns
Ci
Input capacitance
10
10
10
pF
CO
Three-state output capacitance
20
20
20
pF
Cpd
(2) (3)
Power dissipation capacitance
5
80
pF
HCT TYPES
tpd
Propagation delay data to outputs
4.5
9
(1)
22
28
33
ns
tPZH, tPLZ
Output high-Z to high level to low level
4.5
14
(1)
34
43
51
ns
tPHZ, tPLZ
Output high level, output low level to
high-Z
4.5
14
(1)
35
44
53
ns
tt
Output transition times
4.5
12
15
18
ns
Ci
Input capacitance
10
10
10
pF
CO
Three-state output capacitance
20
20
20
pF
Cpd (2) (3)
Power dissipation capacitance
(1)
(2)
(3)
6
5
91
pF
Typical value tested at 5V, CL = 15pF.
CPD is used to determine the dynamic power consumption, per channel.
PD = VCC 2fi (CPD + CL) where fi = Input Frequency, fO = Output Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
6 Parameter Measurement Information
tPD is the maximum between tPLH and tPHL
tt is the maximum between tTLH and tTHL
Figure 6-1. HC and HCT transition times and
propagation delay times, combination logic
Figure 6-3. HC three-state propagation delay
waveform
Figure 6-2. HCT transition times and tpopationg
delay times, combination logic
Figure 6-4. HCT three-state propagation delay
waveform
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test
circuit is Output RL = 1kΩ to VCC, CL = 50pF.
Figure 6-5. HC and HCT three-state propagation delay test circuit
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
7 Detailed Description
7.1 Overview
The CDx4HC243 and CDx4HCT243 silicon-gate CMOS three-state bidirectional noninverting buffers are
intended for two-way asynchronous communication between data buses. They have high-drive-current outputs
that enable high-speed operation when driving large bus capacitances. These circuits possess the low power
dissipation of CMOS circuits and have speeds comparable to low-power Schottky TTL circuits. They can drive
15 LSTTL loads.
The states of the output-enable (OEB, OEA) inputs determine both the direction of flow (A to B, B to A), and the
three-state mode.
7.2 Functional Block Diagram
OEA
OEB
Ax
Bx
1 of 4 Channels
Figure 7-1. Functional Diagram
7.3 Device Functional Modes
(1)(2)
Table 7-1. Truth Table
HC, HCT243 Series
Control Inputs
(1)
(2)
8
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Data port status
OEB
OEA
An
Bn
H
H
O
I
L
H
Z
Z
H
L
Z
Z
L
L
I
O
H = High voltage level. L = Low voltage level. I = Input. O =
Output (Same level as input). Z = High Impedance
To prevent excess currents in the High Z modes all I/O terminals
hsould be terminated with 10kΩ to 1MΩ resistors.
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
8 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions. Each VCC terminal should have a good bypass capacitor to prevent power
disturbance. A 0.1-μF capacitor is recommended for this device. It is acceptable to parallel multiple bypass caps
to reject different frequencies of noise. The 0.1-μF and 1-μF capacitors are commonly used in parallel. The
bypass capacitor should be installed as close to the power terminal as possible for best results.
9 Layout
9.1 Layout Guidelines
When using multiple-input and multiple-channel logic devices inputs must not ever be left floating. In many
cases, functions or parts of functions of digital logic devices are unused; for example, when only two inputs of a
triple-input AND gate are used or only 3 of the 4 buffer gates are used. Such unused input pins must not be left
unconnected because the undefined voltages at the outside connections result in undefined operational states.
All unused inputs of digital logic devices must be connected to a logic high or logic low voltage, as defined by the
input voltage specifications, to prevent them from floating. The logic level that must be applied to any particular
unused input depends on the function of the device. Generally, the inputs are tied to GND or VCC, whichever
makes more sense for the logic function or is more convenient.
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SCHS168E – NOVEMBER 1998 – REVISED MARCH 2022
10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 Documentation Support
10.1.1 Related Documentation
10.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
10.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
10.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
10
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PACKAGE OPTION ADDENDUM
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14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
8409001CA
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8409001CA
CD54HC243F3A
Samples
CD54HC243F
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
CD54HC243F
Samples
CD54HC243F3A
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8409001CA
CD54HC243F3A
Samples
CD74HC243E
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD74HC243E
Samples
CD74HC243EE4
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD74HC243E
Samples
CD74HC243M
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC243M
Samples
CD74HC243M96
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC243M
Samples
CD74HC243MT
ACTIVE
SOIC
D
14
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC243M
Samples
CD74HCT243E
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD74HCT243E
Samples
CD74HCT243M
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HCT243M
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of