CD74HCT640EE4

[ /Title (CD74 HC640 , CD74 HCT64 0) /Subject (High Speed CMOS CD54HC640, CD74HC640, CD54HCT640, CD74HCT640 Data sheet acquired from Harris Semiconductor SCHS192B January 1998 - Revised May 2003 High-Speed CMOS Logic Octal Three-State Bus Transceiver, Inverting Features Description • Buffered Inputs The ’HC640 and ’HCT640 silicon-gate CMOS three-state bidirectional inverting and non-inverting buffers are intended for two-way asynchronous communication between data buses. They have high drive current outputs which enable high-speed operation when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuits, and have speeds comparable to low power Schottky TTL circuits. They can drive 15 LSTTL loads. The ’HC640 and ’HCT640 are inverting buffers. • Three-State Outputs • Applications in Multiple-Data-Bus Architecture • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads • Wide Operating Temperature Range . . . -55oC to 125oC The direction of data flow (A to B, B to A) is controlled by the DIR input. • Balanced Propagation Delay and Transition Times • Significant Power Reduction Compared to LSTTL Logic ICs Outputs are enabled by a low on the Output Enable input (OE); a high OE puts these devices in the high impedance mode. • HC Types - 2V to 6V Operation - High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V Ordering Information • HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH PART NUMBER Pinout CD54HC640, CD54HCT640 (CERDIP) CD74HC640, CD74HCT640 (PDIP, SOIC) TOP VIEW DIR 1 20 VCC A0 2 19 OE A1 3 18 B0 A2 4 17 B1 A3 5 16 B2 A4 6 15 B3 A5 7 14 B4 A6 8 13 B5 A7 9 12 B6 GND 10 11 B7 TEMP. RANGE (oC) CD54HC640F3A -55 to 125 20 Ld CERDIP CD54HCT640F3A -55 to 125 20 Ld CERDIP CD74HC640E -55 to 125 20 Ld PDIP CD74HC640M -55 to 125 20 Ld SOIC CD74HCT640E -55 to 125 20 Ld PDIP CD74HCT640M -55 to 125 20 Ld SOIC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © 2003, Texas Instruments Incorporated 1 PACKAGE CD54HC640, CD74HC640, CD54HCT640, CD74HCT640 Functional Diagram A0 B0 A1 THRU A6 B1 THRU B6 A7 B7 OE DIR OUTPUT ENABLE AND DIRECTION-SELECT LOGIC TRUTH TABLE CONTROL INPUTS DATA PORT STATUS OE DIR An Bn L L O I H H Z Z H L Z Z L H I O To prevent excess currents in the High-Z modes all I/O terminals should be terminated with 1kΩ to 1MΩ resistors. H = High Level L = Low Level I = Input O = Output (Inversion of Input Level) Z = High Impedance 2 VCC = 20 GND = 10 CD54HC640, CD74HC640, CD54HCT640, CD74HCT640 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA DC Drain Current, per Output, IO For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA DC Output Source or Sink Current per Output Pin, IO For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA Thermal Resistance (Typical, Note 1) θJA (oC/W) E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . 69 M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . 58 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS SYMBOL VI (V) IO (mA) High Level Input Voltage VIH - - Low Level Input Voltage VIL High Level Output Voltage CMOS Loads VOH PARAMETER VCC (V) 25oC -40oC TO 85oC -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS HC TYPES - VIH or VIL High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads Input Leakage Current II VCC or GND - 2 1.5 - - 1.5 - 1.5 - V 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V 2 - - 0.5 - 0.5 - 0.5 V 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V -0.02 2 1.9 - - 1.9 - 1.9 - V -0.02 4.5 4.4 - - 4.4 - 4.4 - V -0.02 6 5.9 - - 5.9 - 5.9 - V - - - - - - - - - V -6 4.5 3.98 - - 3.84 - 3.7 - V -7.8 6 5.48 - - 5.34 - 5.2 - V 0.02 2 - - 0.1 - 0.1 - 0.1 V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 0.02 6 - - 0.1 - 0.1 - 0.1 V - - - - - - - - - V 6 4.5 - - 0.26 - 0.33 - 0.4 V 7.8 6 - - 0.26 - 0.33 - 0.4 V - 6 - - ±0.1 - ±1 - ±1 µA 3 CD54HC640, CD74HC640, CD54HCT640, CD74HCT640 DC Electrical Specifications (Continued) TEST CONDITIONS 25oC -40oC TO 85oC -55oC TO 125oC SYMBOL VI (V) IO (mA) VCC (V) Quiescent Device Current ICC VCC or GND 0 6 - - 8 - 80 - 160 µA Three-State Leakage Current IOZ VIL or VIH VO = VCC or GND 6 - - ±0.5 - ±5 - ±10 µA High Level Input Voltage VIH - - 4.5 to 5.5 2 - - 2 - 2 - V Low Level Input Voltage VIL - - 4.5 to 5.5 - - 0.8 - 0.8 - 0.8 V High Level Output Voltage CMOS Loads VOH VIH or VIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V -6 4.5 3.98 - - 3.84 - 3.7 - V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 6 4.5 - - 0.26 - 0.33 - 0.4 V PARAMETER MIN TYP MAX MIN MAX MIN MAX UNITS HCT TYPES High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads II VCC and GND 0 5.5 - - ±0.1 - ±1 - ±1 µA Quiescent Device Current ICC VCC or GND 0 5.5 - - 8 - 80 - 160 µA Three-State Leakage Current IOZ VIL or VIH VO = VCC or GND 5.5 - - ±0.5 - ±5 - ±10 µA Additional Quiescent Device Current Per Input Pin: 1 Unit Load ∆ICC (Note 2) VCC -2.1 - 4.5 to 5.5 - 100 360 - 450 - 490 µA Input Leakage Current NOTE: 2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS DIR 0.9 OE, A 1.5 B 1.5 NOTE: Unit Load is ∆ICC limit specified in DC Electrical Table, e.g., 360µA max at 25oC. 4 CD54HC640, CD74HC640, CD54HCT640, CD74HCT640 Switching Specifications PARAMETER CL = 50pF, Input tr, tf = 6ns SYMBOL TEST CONDITIONS tPHL, tPLH CL = 50pF -40oC TO 85oC 25oC -55oC TO 125oC VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS 2 - - 90 - 115 - 135 ns 4.5 - - 18 - 23 - 27 ns CL = 15pF 5 - 7 - - - - - ns CL = 50pF 6 - - 15 - 20 - 23 ns CL = 50pF 2 - - 150 - 190 - 225 ns 4.5 - - 30 - 38 - 45 ns CL = 15pF 5 - 12 - - - - - ns CL = 50pF 6 - - 26 - 33 - 38 ns CL = 50pF 2 - - 150 - 190 - 225 ns 4.5 - - 30 - 38 - 45 ns CL = 15pF 5 - 12 - - - - - ns CL = 50pF 6 - - 26 - 33 - 38 ns CL = 50pF 2 - - 60 - 75 - 90 ns 4.5 - - 12 - 15 - 18 ns 6 - - 10 - 13 - 15 ns HC TYPES Propagation Delay A to B B to A Output High-Z To High Level, To Low Level Output High Level Output Low Level to High Z Output Transition Time tPHL, tPLH tPHZ, tPLZ tTHL, tTLH Input Capacitance CIN CL = 50pF - 10 - 10 - 10 - 10 pF Three-State Output Capacitance CO - - - - 20 - 20 - 20 pF Power Dissipation Capacitance (Notes 3, 4) CPD - 5 - 38 - - - - - pF A to B B to A tPHL, tPLH CL = 50pF 4.5 - - 22 - 28 - 33 ns CL = 15pF 5 - 9 - - - - - ns Output High-Z To High Level, To Low Level tPHL, tPLH CL = 50pF 4.5 - - 30 - 38 - 45 ns CL = 15pF 5 - 12 - - - - - ns Output High Level Output Low Level to High Z tPHZ, tPLZ CL = 50pF 4.5 - - 30 - 38 - 45 ns CL = 15pF 5 - 12 - - - - - ns tTHL, tTLH CL = 50pF 4.5 - - 12 - 15 - 18 ns Input Capacitance CIN CL = 50pF - 10 - 10 - 10 - 10 pF Three-State Output Capacitance CO - - - - 20 - 20 - 20 pF Power Dissipation Capacitance (Notes 3, 4) CPD - 5 - 41 - - - - - pF HCT TYPES Propagation Delay Output Transition Time NOTES: 3. CPD is used to determine the dynamic power consumption, per channel. 4. PD = VCC2 fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage. 5 CD54HC640, CD74HC640, CD54HCT640, CD74HCT640 Test Circuits and Waveforms tr = 6ns tf = 6ns 90% 50% 10% INPUT GND tTLH tPHL 6ns 10% 2.7 1.3 OUTPUT LOW TO OFF 90% OUTPUT HIGH TO OFF 50% OUTPUTS DISABLED FIGURE 9. HC THREE-STATE PROPAGATION DELAY WAVEFORM OTHER INPUTS TIED HIGH OR LOW OUTPUT DISABLE IC WITH THREESTATE OUTPUT GND 1.3V tPZH 90% OUTPUTS ENABLED OUTPUTS ENABLED 0.3 10% tPHZ tPZH 3V tPZL tPLZ 50% OUTPUTS ENABLED 6ns GND 10% tPHZ tf OUTPUT DISABLE tPZL tPLZ OUTPUT HIGH TO OFF 6ns tr VCC 90% tPLH FIGURE 8. HCT TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 6ns OUTPUT LOW TO OFF 1.3V 10% INVERTING OUTPUT FIGURE 7. HC TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 50% tTLH 90% tPLH tPHL GND tTHL 90% 50% 10% INVERTING OUTPUT 3V 2.7V 1.3V 0.3V INPUT tTHL OUTPUT DISABLE tf = 6ns tr = 6ns VCC 1.3V OUTPUTS DISABLED OUTPUTS ENABLED FIGURE 10. HCT THREE-STATE PROPAGATION DELAY WAVEFORM OUTPUT RL = 1kΩ CL 50pF VCC FOR tPLZ AND tPZL GND FOR tPHZ AND tPZH NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to VCC, CL = 50pF. FIGURE 11. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT 6 PACKAGE OPTION ADDENDUM www.ti.com 25-Sep-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) 5962-8974001RA ACTIVE CDIP J 20 1 TBD A42 N / A for Pkg Type -55 to 125 5962-8974001RA CD54HCT640F3A CD54HC640F3A ACTIVE CDIP J 20 1 TBD A42 N / A for Pkg Type -55 to 125 5962-8780901RA CD54HC640F3A CD54HCT640F3A ACTIVE CDIP J 20 1 TBD A42 N / A for Pkg Type -55 to 125 5962-8974001RA CD54HCT640F3A CD74HC640E ACTIVE PDIP N 20 20 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HC640E CD74HC640EE4 ACTIVE PDIP N 20 20 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HC640E CD74HC640M ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC640M CD74HC640ME4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC640M CD74HC640MG4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC640M CD74HCT640E ACTIVE PDIP N 20 20 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HCT640E CD74HCT640EE4 ACTIVE PDIP N 20 20 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HCT640E CD74HCT640M ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT640M CD74HCT640ME4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT640M CD74HCT640MG4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT640M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 25-Sep-2013 (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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OTHER QUALIFIED VERSIONS OF CD54HC640, CD54HCT640, CD74HC640, CD74HCT640 : • Catalog: CD74HC640, CD74HCT640 • Military: CD54HC640, CD54HCT640 NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product • Military - QML certified for Military and Defense Applications Addendum-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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