CD54HC85, CD74HC85, CD54HCT85, CD74HCT85
SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
CDx4HC85, CDx4HCT85 High-Speed CMOS Logic 4-Bit Magnitude Comparator
1 Features
2 Description
•
•
The ’HC85 and ’HCT85 are high speed magnitude
comparators that use silicon-gate CMOS technology
to achieve operating speeds similar to LSTTL with the
low power consumption of standard CMOS integrated
circuits.
•
•
•
•
•
•
•
Buffered inputs and outputs
Typical propagation delay: 13 ns (data to output at
VCC = 5 V, CL = 15 pF, TA = 25℃)
Serial or parallel expansion without external gating
Fanout (over temperature range)
– Standard outputs: 10 LSTTL loads
– Bus driver outputs: 15 LSTTL loads
Wide operating temperature range: –55℃ to 125℃
Balanced propagation delay and transition times
Significant power reduction compared to LSTTL
Logic ICs
HC types
– 2 V to 6 V operation
– High noise immunity: NIL = 30%, NIH = 30% of
VCC at VCC = 5 V
HCT types
– 4.5 V to 5.5 V operation
– Direct LSTTL input logic compatibility,
VIL = 0.8 V (max), VIH = 2 V (min)
– CMOS input compatibility, II ≤ 1 μA at VOL, VOH
These 4-bit devices compare two binary, BCD, or
other monotonic codes and present the three possible
magnitude results at the outputs (A > B, A < B, and
A = B). The 4-bit input words are weighted (A0 to
A3 and B0 to B3), where A3 and B3 are the most
significant bits.
Device Information
(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
CD54HC85F3A
CDIP (16)
24.38 mm × 6.92 mm
CD54HCT85F3A
CDIP (16)
24.38 mm × 6.92 mm
CD74HC85M
SOIC (16)
9.90 mm × 3.90 mm
CD74HCT85M
SOIC (16)
9.90 mm × 3.90 mm
CD74HC85E
PDIP (16)
19.31 mm × 6.35 mm
CD74HCT85E
PDIP (16)
19.31 mm × 6.35 mm
CD74HC85NS
SO (16)
6.20 mm × 5.30 mm
CD74HC85PW
TSSOP (16)
5.00 mm × 4.40 mm
(1)
For all available packages, see the orderable addendum at
the end of the data sheet.
Functional Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CD54HC85, CD74HC85, CD54HCT85, CD74HCT85
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
Table of Contents
1 Features............................................................................1
2 Description.......................................................................1
3 Revision History.............................................................. 2
4 Pin Configuration and Functions...................................3
5 Specifications.................................................................. 4
5.1 Absolute Maximum Ratings(1) .................................... 4
5.2 Recommended Operating Conditions ........................4
5.3 Thermal Information....................................................4
5.4 Electrical Characteristics.............................................5
5.5 Switching Specifications............................................. 6
6 Parameter Measurement Information............................ 7
7 Detailed Description........................................................9
7.1 Overview..................................................................... 9
7.2 Functional Block Diagram........................................... 9
7.3 Device Functional Modes..........................................10
8 Power Supply Recommendations................................11
9 Layout............................................................................. 11
9.1 Layout Guidelines..................................................... 11
10 Device and Documentation Support..........................12
10.1 Receiving Notification of Documentation Updates..12
10.2 Support Resources................................................. 12
10.3 Trademarks............................................................. 12
10.4 Electrostatic Discharge Caution..............................12
10.5 Glossary..................................................................12
11 Mechanical, Packaging, and Orderable
Information.................................................................... 12
3 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (October 2003) to Revision F (February 2022)
Page
• Updated the numbering, formatting, tables, figures, and cross-references throughout the document to reflect
modern data sheet standards............................................................................................................................. 1
2
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
4 Pin Configuration and Functions
J, N, D, NS, or PW package
16-Pin CDIP, PDIP, SOIC, SO, or TSSOP
Top View
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
5 Specifications
5.1 Absolute Maximum Ratings(1)
MIN
MAX
–0.5
7
UNIT
VCC
Supply voltage
IIK
Input diode current
For VI < –0.5 V or VI > VCC + 0.5 V
±20
mA
IOK
Output diode current
For VO < –0.5 V or VO > VCC + 0.5 V
±20
mA
IO
Output source or sink current per output pin
For VO > –0.5 V or VO < VCC + 0.5 V
±25
mA
ICC
Continuous current through VCC or GND
±50
mA
TJ
Junction temperature
150
°C
Tstg
Storage temperature range
150
°C
300
°C
–65
Lead temperature (Soldering 10s) (SOIC - lead tips only)
(1)
V
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.
5.2 Recommended Operating Conditions
MIN
VCC
Supply voltage range
VI, VO
Input or output voltage
HC types
HCT types
MAX
2
6
4.5
5.5
0
VCC
2V
Input rise and fall time
TA
UNIT
V
V
1000
4.5 V
500
6V
400
Temperature range
–55
125
ns
℃
5.3 Thermal Information
THERMAL METRIC
RθJA
(1)
4
Junction-to-ambient thermal
(1)
resistance
D (SOIC)
N (PDIP)
NS (SO)
PW (TSSOP)
16 PINS
16 PINS
16 PINS
16 PINS
UNIT
73
67
64
108
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application
report.
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
5.4 Electrical Characteristics
PARAMETER
TEST
CONDITIONS(1)
VCC (V)
25℃
MIN
TYP
–40℃ to 85℃
MAX
MIN
MAX
–55℃ to 125℃
MIN
MAX
UNIT
HC TYPES
VIH
VIL
VOH
High level input
voltage
Low level input
voltage
High level output
voltage
High level output
voltage
VOL
Low level output
voltage
Low level output
voltage
II
Input leakage
current
ICC
Supply current
2
1.5
1.5
1.5
4.5
3.15
3.15
3.15
6
4.2
4.2
V
4.2
2
0.5
0.5
0.5
4.5
1.35
1.35
1.35
6
1.8
1.8
1.8
IOH = – 20 μA
2
1.9
1.9
1.9
IOH = – 20 μA
4.5
4.4
4.4
4.4
IOH = – 20 μA
6
5.9
5.9
5.9
IOH = – 4 mA
4.5
3.98
3.84
3.7
IOH = – 5.2 mA
6
5.48
IOL = 20 μA
2
0.1
0.1
0.1
5.34
V
V
5.2
IOL = 20 μA
4.5
0.1
0.1
0.1
IOL = 20 μA
6
0.1
0.1
0.1
IOL = 4 mA
4.5
0.26
0.33
0.4
IOL = 5.2 mA
6
0.26
0.33
0.4
V
6
±0.1
±1
±1
μA
6
8
80
160
μA
VI = VCC or GND
V
HCT TYPES
VIH
High level input
voltage
4.5 to
5.5
VIL
Low level input
voltage
4.5 to
5.5
VOH
VOL
0.8
V
0.8
V
4.5
4.4
4.4
4.4
High level output
voltage
IOH = – 4 μA
4.5
3.98
3.84
3.7
Low level output
voltage
IOL = 20 μA
4.5
Low level output
voltage
IOL = 4 μA
4.5
0.26
0.33
0.4
VI = VCC or GND
5.5
±0.1
±1
±1
μA
8
80
160
μA
ICC
Supply current
(1)
(2)
(3)
0.8
2
IOH = – 20 μA
Input leakage
current
(2)
2
High level output
voltage
II
ΔICC
2
Additional supply
current per input pin
V
0.1
0.1
0.1
V
VI = VCC or GND
5.5
A0 - A3, B0 - B3 and
(A = B) IN(3)
4.5 to
5.5
100
540
675
735
μA
(A > B) IN, (A < B)
IN(3)
4.5 to
5.5
100
360
450
490
μA
VI = VIH or VIL, unless otherwise noted.
For dual-supply systems theoretical worst case (VI = 2.4 V, VCC = 5.5 V) specification is 1.8 mA.
Inputs held at VCC – 2.1.
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5.5 Switching Specifications
Input tr, tf = 6 ns
PARAMETER
VCC (V)
25℃
MIN
TYP
–40℃ to 85℃
MAX
MIN
MAX
–55℃ to 125℃
MIN
MAX
UNIT
HC TYPES
2
Propagation delay,
tPLH, tPHL An, Bn to (A > B) OUT,
(A < B) OUT
4.5
(3)
42
50
240
265
35
44
53
30
37
45
140
175
210
28
35
42
24
30
36
120
150
180
24
30
36
20
26
31
14
(3)
4.5
11
(3)
2
4.5
(3)
9
6
Power dissipation capacitance(1) (2)
CPD
tTLH, tTHL Output transition times (Figure 6-1)
CIN
59
33
6
tPLH, tPHL (A > B) IN to (A = B) OUT
295
47
175
2
(A > B) IN, (A < B) IN, (A = B) IN
to (A > B) OUT, (A < B) OUT
245
39
2
6
tPLH, tPHL
195
6
4.5
tPLH, tPHL An, Bn to (A = B) OUT
16
5
24
ns
ns
ns
ns
pF
2
75
95
110
4.5
15
19
22
6
13
16
19
10
10
10
pF
Input capacitance
ns
HCT TYPES
Propagation delay,
An, Bn to (A > B) OUT, (A < B) OUT
4.5
15
(3)
37
46
56
ns
4.5
17
(3)
40
50
60
ns
4.5
12
(3)
30
38
45
ns
tPLH, tPHL (A > B) IN to (A = B) OUT
4.5
13
(3)
31
39
47
ns
tTLH, tTHL Output transition times (Figure 6-1)
4.5
15
19
22
ns
10
10
10
tPLH, tPHL
tPLH, tPHL An, Bn to (A = B) OUT
tPLH tPHL
CPD
Power dissipation
CIN
Input capacitance
(1)
(2)
(3)
6
(A > B) IN, (A < B) IN, (A = B) IN
to (A > B) OUT, (A < B) OUT
capacitance(1) (2)
5
26
pF
pF
CPD is used to determine the dynamic power consumption, per gate/package.
PD = VCC 2 fi (CPD + CL) where fi = input frequency, CL = output load capacitance, VCC = supply voltage.
CL = 15 pF and VCC = 5 V.
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
6 Parameter Measurement Information
Figure 6-1. HC and HCU Transition Times and
Propagation Delay Times, Combination Logic
Figure 6-2. HCT Transition Times and Propagation
Delay Times, Combination Logic
Figure 6-3. Series Cascading - Comparing 12-Bit Words
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Figure 6-4. Parallel Cascading - Comparing 12-Bit Words
8
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
7 Detailed Description
7.1 Overview
The ’HC85 and ’HCT85 are high speed magnitude comparators that use silicon-gate CMOS technology to
achieve operating speeds similar to LSTTL with the low power consumption of standard CMOS integrated
circuits.
These 4-bit devices compare two binary, BCD, or other monotonic codes and present the three possible
magnitude results at the outputs (A > B, A < B, and A = B). The 4-bit input words are weighted (A0 to A3
and B0 to B3), where A3 and B3 are the most significant bits.
The devices are expandable without external gating, in both serial and parallel fashion. The upper part of the
truth table indicates operation using a single device or devices in a serially expanded application. The parallel
expansion scheme is described by the last three entries in the truth table.
7.2 Functional Block Diagram
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7.3 Device Functional Modes
Table 7-1. Truth Table(1)
COMPARING INPUTS
A3, B3
A2, B2
CASCADING INPUTS
A1, B1
OUTPUTS
A0, B0
A>B
AB
A B3
X
X
X
X
X
X
H
L
L
A3 < B3
X
X
X
X
X
X
L
H
L
A3 = B3
A2 >B2
X
X
X
X
X
H
L
L
A3 = B3
A2 < B2
X
X
X
X
X
L
H
L
A3 = B3
A2 = B2
A1 > B1
X
X
X
X
H
L
L
A3 = B3
A2 = B2
A1 < B1
X
X
X
X
L
H
L
A3 = B3
A2 = B2
A1 = B1
A0 > B0
X
X
X
H
L
L
A3 = B3
A2 = B2
A1 = B1
A0 < B0
X
X
X
L
H
L
A3 = B3
A2 = B2
A1 = B1
A0 = B0
H
L
L
H
L
L
A3 = B3
A2 = B2
A1 = B1
A0 = B0
L
H
L
L
H
L
A3 = B3
A2 = B2
A1 = B1
A0 = B0
L
L
H
L
L
H
PARALLEL CASCADING
(1)
10
A3 = B3
A2 = B2
A1 = B1
A0 = B0
X
X
H
L
L
H
A3 = B3
A2 = B2
A1 = B1
A0 = B0
H
H
L
L
L
L
A3 = B3
A2 = B2
A1 = B1
A0 = B0
L
L
L
H
H
L
H = high voltage level, L = low voltage level, X = don’t care
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SCHS136F – AUGUST 1997 – REVISED FEBRUARY 2022
8 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions. Each VCC terminal should have a good bypass capacitor to prevent power
disturbance. A 0.1-μF capacitor is recommended for this device. It is acceptable to parallel multiple bypass caps
to reject different frequencies of noise. The 0.1-μF and 1-μF capacitors are commonly used in parallel. The
bypass capacitor should be installed as close to the power terminal as possible for best results.
9 Layout
9.1 Layout Guidelines
When using multiple-input and multiple-channel logic devices inputs must not ever be left floating. In many
cases, functions or parts of functions of digital logic devices are unused; for example, when only two inputs of a
triple-input AND gate are used or only 3 of the 4 buffer gates are used. Such unused input pins must not be left
unconnected because the undefined voltages at the outside connections result in undefined operational states.
All unused inputs of digital logic devices must be connected to a logic high or logic low voltage, as defined by the
input voltage specifications, to prevent them from floating. The logic level that must be applied to any particular
unused input depends on the function of the device. Generally, the inputs are tied to GND or VCC, whichever
makes more sense for the logic function or is more convenient.
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
10.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
10.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
12
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PACKAGE OPTION ADDENDUM
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14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
(1)
5962-8867201EA
ACTIVE
CDIP
J
16
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
5962-8867201EA
CD54HCT85F3A
Samples
8601301EA
ACTIVE
CDIP
J
16
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8601301EA
CD54HC85F3A
Samples
CD54HC85F3A
ACTIVE
CDIP
J
16
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8601301EA
CD54HC85F3A
Samples
CD54HCT85F3A
ACTIVE
CDIP
J
16
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
5962-8867201EA
CD54HCT85F3A
Samples
CD74HC85E
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD74HC85E
Samples
CD74HC85EE4
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD74HC85E
Samples
CD74HC85M
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC85M
Samples
CD74HC85M96
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC85M
Samples
CD74HC85M96E4
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC85M
Samples
CD74HC85MT
ACTIVE
SOIC
D
16
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC85M
Samples
CD74HC85MTE4
ACTIVE
SOIC
D
16
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC85M
Samples
CD74HC85NSR
ACTIVE
SO
NS
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HC85M
Samples
CD74HC85PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HJ85
Samples
CD74HC85PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HJ85
Samples
CD74HC85PWT
ACTIVE
TSSOP
PW
16
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HJ85
Samples
CD74HCT85E
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD74HCT85E
Samples
CD74HCT85M
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HCT85M
Samples
CD74HCT85MT
ACTIVE
SOIC
D
16
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
HCT85M
Samples
The marketing status values are defined as follows:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
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14-Oct-2022
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of