CLVTH16652IDGGREP

       

  
  
 
SCBS787 − NOVEMBER 2003 D Controlled Baseline D D D D D D D D D D D D D Latch-Up Performance Exceeds 500 mA Per − One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Member of the Texas Instruments WidebusE Family State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation Supports Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Supports Unregulated Battery Operation Down To 2.7 V Typical VOLP (Output Ground Bounce)