CSD13380F3T

CSD13380F3 SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 CSD13380F3 12-V N-Channel FemtoFET™ MOSFET Product Summary 1 Features • • • • • • • • TA = 25°C Low on resistance Ultra-low Qg and Qgd High operating drain current Ultra-small footprint – 0.73 mm × 0.64 mm Low profile – 0.36-mm max height Integrated ESD protection diode – Rated > 3-kV HBM – Rated > 2-kV CDM Lead and halogen free RoHS compliant • • VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage DEVICE QTY CSD13380F3 3000 CSD13380F3T 250 (1) Optimized for load switch applications Optimized for general purpose switching applications Battery applications Handheld and mobile applications 3 Description This 63-mΩ, 12-V N-Channel MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . 0.36 mm 0.15 nC 96 VGS = 2.5 V 73 VGS = 4.5 V 63 0.85 mΩ V MEDIA PACKAGE SHIP 7-Inch Reel Femto 0.73 mm × 0.64 mm Land Grid Array (LGA) Tape and Reel For all available packages, see the orderable addendum at the end of the data sheet. VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage 8 V IDM PD V(ESD) TJ, Tstg (2) (3) Continuous Drain Current(1) 3.6 Continuous Drain Current(2) 2.1 Pulsed Drain Current(2) (3) 13.5 Power Dissipation(1) 1.4 Power Dissipation(2) 0.5 Human-Body Model (HBM) 3 Charged-Device Model (CDM) 2 Operating Junction, Storage Temperature –55 to 150 A A W kV °C Max Cu, typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB. Min Cu, typical RθJA = 255°C/W. Pulse duration ≤ 100 μs, duty cycle ≤ 1%. G D Typical Part Dimensions . V nC Absolute Maximum Ratings (1) 0.73 mm 12 0.91 VGS = 1.8 V TA = 25°C (unless otherwise stated) ID FemtoFET™ 0.64 mm UNIT Device Information(1) 2 Applications • • TYPICAL VALUE S Top View An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Specifications.................................................................. 3 5.1 Electrical Characteristics.............................................3 5.2 Thermal Information....................................................3 5.3 Typical MOSFET Characteristics................................ 4 6 Device and Documentation Support..............................7 6.1 Receiving Notification of Documentation Updates......7 6.2 Trademarks................................................................. 7 7 Mechanical, Packaging, and Orderable Information.... 8 7.1 Mechanical Dimensions.............................................. 8 7.2 Recommended Minimum PCB Layout........................9 7.3 Recommended Stencil Pattern................................... 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision * (October 2016) to Revision A (February 2022) Page • Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height................................................................. 1 • Updated ultra-low profile image height from 0.35 mm to 0.36 mm..................................................................... 1 • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.................................................................... 8 • Added FemtoFET Surface Mount Guide note.................................................................................................... 9 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA RDS(on) Drain-to-source on resistance gfs Transconductance 12 V 50 nA 25 nA 0.85 1.30 V VGS = 1.8 V, IDS = 0.1 A 96 135 VGS = 2.5 V, IDS = 0.4 A 73 92 VGS = 4.5 V, IDS = 0.4 A 63 76 VDS = 1.2 V, IDS = 0.4 A 4.3 0.55 mΩ S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance 120 156 pF 81 105 pF Crss RG Reverse transfer capacitance 9.6 12.5 pF Series gate resistance 16 Qg Gate charge total (4.5 V) 0.91 Qgd Gate charge gate-to-drain 0.15 nC Qgs Gate charge gate-to-source 0.19 nC Qg(th) Gate charge at Vth 0.15 nC Qoss Output charge 0.81 nC td(on) Turnon delay time 4 ns tr Rise time td(off) Turnoff delay time tf Fall time VGS = 0 V, VDS = 6 V, ƒ = 1 MHz VDS = 6 V, IDS = 0.4 A VDS = 6 V, VGS = 0 V VDS = 6 V, VGS = 4.5 V, IDS = 0.4 A, RG = 2 Ω Ω 1.2 nC 4 ns 11 ns 3 ns DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time ISD = 0.4 A, VGS = 0 V 0.71 VDS= 6 V, IF = 0.4 A, di/dt = 100 A/μs 1 V 2.1 nC 8 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-ambient thermal resistance(1) 90 Junction-to-ambient thermal resistance(2) 255 MAX UNIT °C/W Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 3 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 5.3 Typical MOSFET Characteristics 5 10 4.5 9 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) TA = 25°C (unless otherwise stated) 4 3.5 3 2.5 2 1.5 1 TC = 125°C TC = 25°C TC = -55°C 0.5 8 7 6 5 4 3 2 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS - Gate-to-Source Voltage (V) 1.6 1.8 0 0.1 D003 Figure 5-1. Transient Thermal Impedance 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS - Drain-to-Source Voltage (V) 0.9 1 D002 Figure 5-2. Saturation Characteristics VDS = 5 V Figure 5-3. Transfer Characteristics 4 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 1000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 4 3.5 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 4.5 3 2.5 2 1.5 100 10 1 0.5 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Qg - Gate Charge (nC) VDS = 6 V 0.7 0.8 0 0.9 2 D004 4 6 8 VDS - Drain-to-Source Voltage (V) 10 12 D005 Figure 5-5. Capacitance ID = 0.4 A Figure 5-4. Gate Charge 200 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 1.15 1.05 0.95 0.85 0.75 0.65 0.55 0.45 -75 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 140 120 100 80 60 40 20 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) D006 Figure 5-6. Threshold Voltage vs Temperature 7 8 D007 Figure 5-7. On-State Resistance vs Gate-to-Source Voltage 1.5 10 VGS = 1.8 V VGS = 4.5 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 160 0 175 ID = 250 µA 1.4 TC = 25°C, ID = 0.4 A TC = 125°C, ID = 0.4 A 180 1.3 1.2 1.1 1 0.9 TC = -55°C TC = -40°C TC = 25°C TC = 125°C TC = 150°C 1 0.1 0.01 0.001 0.8 0.7 -75 0.0001 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 0.1 175 D008 ID = 0.4A 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD - Source-to-Drain Voltage (V) 0.9 1 D009 Figure 5-9. Typical Diode Forward Voltage Figure 5-8. Normalized On-State Resistance vs Temperature Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 5 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 10 10 1 100 ms 10 ms 0.1 0.1 TC = 25qC TC = 125qC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 100 1 ms 100 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 1 0.01 D010 Single pulse, typical RθJA = 255°C/W (min Cu) Figure 5-10. Maximum Safe Operating Area 0.1 TAV - Time in Avalanche (ms) 1 D011 Figure 5-11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current (A) 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 D012 Typical RθJA = 255°C/W (min Cu) Figure 5-12. Maximum Drain Current vs Temperature 6 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Trademarks FemtoFET™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 7 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Mechanical Dimensions 0.73 0.65 A B PIN 1 INDEX AREA 0.64 0.56 0.36 MAX C SEATING PLANE 0.4 0.225 2 3 0.175 0.51 0.49 0.35 1 0.015 0.16 2X 0.14 C B A 2X A. B. C. 0.16 0.14 0.015 C A B 0.26 0.24 All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994). This drawing is subject to change without notice. This package is a PB-free solder land design. Table 7-1. Pin Configuration 8 POSITION DESIGNATION Pin 1 Gate Pin 2 Source Pin 3 Drain Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 CSD13380F3 www.ti.com SLPS593A – OCTOBER 2016 – REVISED FEBRUARY 2022 7.2 Recommended Minimum PCB Layout (0.15) 2X (0.25) 2X (0.15) 0.05 MIN ALL AROUND TYP 1 3 SYMM (0.35) (0.5) 2 EXAMPLE STENCIL DESIGN (R0.05) TYP YJM0003A SOLDER MASK OPENING PicoStar TM TYP PKG METAL UNDER SOLDER MASK TYP (0.175) - 0.35 mm max height PicoStar TM (0.4) A. All dimensions are in millimeters. A. SOLDER MASK DEFINED For more information, see FemtoFET Surface Mount GuideSCALE:50X (SLRA003D). LAND PATTERN EXAMPLE 7.3 Recommended Stencil Pattern 2X (0.25) 2X (0.2) (0.15) 1 3 SYMM (0.4) 2X (0.15) (0.5) 2 PKG (R0.05) TYP 2X SOLDER MASK EDGE (0.175) (0.4) 4222304/A 09/2015 A. All dimensions are in millimeters. NOTES: (continued) SOLDER PASTE EXAMPLE 0.075 -(www.ti.com/lit/slua271). 0.1 mm THICK STENCIL 4. For more information, see Texas Instruments literature number ON SLUA271 SCALE:50X www.ti.com Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13380F3 9 PACKAGE OPTION ADDENDUM www.ti.com 11-Jan-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD13380F3 ACTIVE PICOSTAR YJM 3 3000 RoHS & Green NIAU Level-1-260C-UNLIM -55 to 150 D CSD13380F3T ACTIVE PICOSTAR YJM 3 250 RoHS & Green NIAU Level-1-260C-UNLIM -55 to 150 D (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of