CSD13385F5T

CSD13385F5 SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 CSD13385F5 12-V N-Channel FemtoFET™ MOSFET . 1 Features • • • • • • • Product Summary Low on resistance Low Qg and Qgd Ultra-small footprint – 1.53 mm × 0.77 mm Low profile – 0.36-mm height Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM Lead and halogen free RoHS compliant TA = 25°C 12 V Qg Gate Charge Total (4.5 V) 3.9 nC Qgd Gate Charge Gate-to-Drain 0.39 nC RDS(on) Drain-to-Source On Resistance VGS = 1.8 V 26 VGS = 2.5 V 18 VGS = 4.5 V 15 Threshold Voltage 0.8 mΩ V Device Information(1) Optimized for industrial load switch applications Optimized for general purpose switching applications DEVICE QTY CSD13385F5 3000 CSD13385F5T (1) 250 MEDIA PACKAGE SHIP 7-Inch Reel Femto 1.53-mm × 0.77-mm SMD Lead Less Tape and Reel For all available packages, see the orderable addendum at the end of the data sheet. 3 Description Absolute Maximum Ratings This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage 8 V ID IDM PD 0.36 mm V(ESD) TJ, Tstg 0.77 mm UNIT Drain-to-Source Voltage VGS(th) 2 Applications • • TYPICAL VALUE VDS 1.53 mm (1) (2) (3) Current(1) 4.3 Continuous Drain Current(2) 7.1 Continuous Drain Pulsed Drain Current(1) (3) 41 Power Dissipation(1) 0.5 Power Dissipation(2) 1.4 Human-Body Model (HBM) 4 Charged-Device Model (CDM) 2 Operating Junction, Storage Temperature –55 to 150 A A W kV °C Min Cu, typical RθJA = 245°C/W. Max Cu, typical RθJA = 90°C/W. Pulse duration ≤ 100 μs, duty cycle ≤ 1%. G Typical Part Dimensions . . S . D Top View An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD13385F5 www.ti.com SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Specifications.................................................................. 3 5.1 Electrical Characteristics.............................................3 5.2 Thermal Information....................................................3 5.3 Typical MOSFET Characteristics................................ 3 6 Device and Documentation Support..............................7 6.1 Receiving Notification of Documentation Updates......7 6.2 Trademarks................................................................. 7 7 Mechanical, Packaging, and Orderable Information.... 8 7.1 Mechanical Dimensions.............................................. 8 7.2 Recommended Minimum PCB Layout........................9 7.3 Recommended Stencil Pattern................................... 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (May 2017) to Revision B (February 2022) Page • Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height................................................................. 1 • Updated ultra-low profile image height from 0.35 mm to 0.36 mm..................................................................... 1 • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.................................................................... 8 • Added FemtoFET Surface Mount Guide note.................................................................................................... 9 Changes from Revision * (October 2016) to Revision A (May 2017) Page • Changed IDSS andIGSS unit value from µA to nA in the Electrical Characteristics table. ....................................3 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 CSD13385F5 www.ti.com SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA RDS(on) Drain-to-source on resistance gfs Transconductance 12 V 50 nA 25 nA 0.8 1.2 V VGS = 1.8 V, IDS = 0.1 A 26 50 VGS = 2.5 V, IDS = 0.9 A 18 23 VGS = 4.5 V, IDS = 0.9 A 15 19 VDS = 1.2 V, IDS = 0.9 A 11.3 0.5 mΩ S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance 519 674 pF 305 396 pF Crss RG Reverse transfer capacitance 29 38 pF Series gate resistance 20 Qg Gate charge total (4.5 V) 3.9 Qgd Gate charge gate-to-drain 0.39 nC Qgs Gate charge gate-to-source 0.74 nC Qg(th) Gate charge at Vth 0.46 nC Qoss Output charge 2.5 nC td(on) Turnon delay time 7 ns tr Rise time 10 ns td(off) Turnoff delay time 33 ns tf Fall time 10 ns VGS = 0 V, VDS = 6 V, ƒ = 1 MHz VDS = 6 V, IDS = 0.9 A VDS = 6 V, VGS = 0 V VDS = 6 V, VGS = 4.5 V, IDS = 0.9 A, RG = 2 Ω Ω 5.0 nC DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 0.9 A, VGS = 0 V 0.67 1.0 V 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-ambient thermal resistance(1) 90 Junction-to-ambient thermal resistance(2) 245 MAX UNIT °C/W Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Device mounted on FR4 material with minimum Cu mounting area. 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 3 CSD13385F5 www.ti.com 20 10 18 9 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 16 14 12 10 8 6 4 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 2 8 7 6 5 4 3 2 TC = 125°C TC = 25°C TC = -55°C 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS - Drain-to-Source Voltage (V) 0.9 1 0 0.2 D002 0.4 0.6 0.8 1 1.2 1.4 VGS - Gate-to-Source Voltage (V) Figure 5-1. Saturation Characteristics 1.6 1.8 D003 VDS = 5 V Figure 5-2. Transfer Characteristics Figure 5-3. Transient Thermal Impedance 1000 4 3.5 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 4.5 3 2.5 2 1.5 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 100 1 0.5 10 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 Qg - Gate Charge (nC) 3.2 3.6 4 0 D004 ID = 0.9 A VDS = 6 V 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 12 D005 Figure 5-5. Capacitance Figure 5-4. Gate Charge 4 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 CSD13385F5 SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 1.1 50 1 45 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) www.ti.com 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -75 TC = 25°C, ID = 0.9 A TC = 125°C, ID = 0.9 A 40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 175 0 ID = 250 µA Figure 5-6. Threshold Voltage vs Temperature 7 8 D007 10 VGS = 1.8 V VGS = 4.5 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Figure 5-7. On-State Resistance vs Gate-to-Source Voltage 1.5 1.4 1 D006 1.3 1.2 1.1 1 0.9 TC = -55°C TC = -40°C TC = 25°C TC = 125°C TC = 150°C 1 0.1 0.01 0.001 0.8 0.7 -75 0.0001 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 0.1 175 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD - Source-to-Drain Voltage (V) 0.9 1 D009 Figure 5-9. Typical Diode Forward Voltage D008 ID = 0.9 A Figure 5-8. Normalized On-State Resistance vs Temperature 100 IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 100 10 1 100 ms 10 ms 0.1 0.1 1 ms 100 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25qC TC = 125qC 10 1 0.01 D010 Single pulse, typical RθJA = 290°C/W Figure 5-10. Maximum Safe Operating Area (SOA) 0.1 TAV - Time in Avalanche (ms) 1 D010 D011 Figure 5-11. Single Pulse Unclamped Inductive Switching Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 5 CSD13385F5 www.ti.com SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 IDS - Drain-to-Source Current (A) 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 D012 Typical RθJA = 245°C/W Figure 5-12. Maximum Drain Current vs Temperature 6 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 CSD13385F5 www.ti.com SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Trademarks FemtoFET™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 7 CSD13385F5 www.ti.com SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Mechanical Dimensions 0.77 0.69 A B PIN 1 INDEX AREA 1.53 1.45 C 0.36 MAX SEATING PLANE 3 0.5 (R0.05) TYP 1 1 3X 3X 0.40 0.38 0.16 0.14 0.015 TOP B A 4222132/A 06/2015 A. B. C. All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994). This drawing is subject to change without notice. This package is a PB-free solder land design. Table 7-1. Pin Configuration 8 POSITION DESIGNATION Pin 1 Gate Pin 2 Source Pin 3 Drain Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 YJK0003A PicoStar TM - 0.35 mm max height PicoStar TM CSD13385F5 www.ti.com SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 7.2 Recommended Minimum PCB Layout 3X (0.39) (0.05) MIN ALL AROUND 1 (R0.05) TYP 3X (0.15) SYMM SOLDER MASK OPENING TYP (0.5) 3 YJK0003A EXAMPLE STENCIL DESIGN TM METAL UNDER PicoStar - 0.35 mm max height SOLDER MASK SYMM TYP A. B. PicoStar TM All dimensions are in millimeters. LAND PATTERN EXAMPLE SOLDER MASK DEFINED For more information, see FemtoFET Surface Mount Guide (SLRA003D). SCALE:50X 7.3 Recommended Stencil Pattern 3X (0.39) 1 3X (0.2) (R0.05) TYP 2X (0.15) SYMM (0.15) (0.525) 4222132/B 08/2016 NOTES: (continued) 3 4. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271). SOLDER MASK EDGE SYMM TYP A. All dimensions are in millimeters. SOLDER PASTE EXAMPLE ON 0.075 - 0.1 mm THICK STENCIL SCALE:50X www.ti.com Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD13385F5 9 PACKAGE OPTION ADDENDUM www.ti.com 11-Jan-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD13385F5 ACTIVE PICOSTAR YJK 3 3000 RoHS & Green NIAU Level-1-260C-UNLIM -55 to 150 4V CSD13385F5T ACTIVE PICOSTAR YJK 3 250 RoHS & Green NIAU Level-1-260C-UNLIM -55 to 150 4V (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of