CSD16322Q5

CSD16322Q5 www.ti.com SLPS219B – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET™ Power MOSFET Check for Samples: CSD16322Q5 FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.8 nC Qgd Gate Charge Gate to Drain RDS(on) VGS(th) • Drain to Source On Resistance mΩ VGS = 4.5V 4.6 mΩ VGS = 8V 3.9 mΩ Threshold Voltage 1.1 V ORDERING INFORMATION Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems Synchronous or Control FET Applications Package Media CSD16322Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated DESCRIPTION VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 97 A Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C(2) 136 A PD Power Dissipation(1) 3.1 W ID S 1 8 D TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C S 2 7 D EAS Avalanche Energy, single pulse ID = 50A, L = 0.1mH, RG = 25Ω 125 mJ S 3 6 D (1) Typical RqJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% D G 5 4 D P0094-01 RDS(on) vs VGS 12 11 10 GATE CHARGE 10 ID = 20A ID = 20A VDS = 12.5V 9 8 9 8 7 VG − Gate Voltage − V RDS(on) − On-State Resistance − mW nC 5.4 Device APPLICATIONS • 1.3 VGS = 3V TC = 125°C 6 5 4 TC = 25°C 3 2 1 0 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 VGS − Gate to Source Voltage − V 9 10 0 0 G006 2 4 6 8 10 Qg − Gate Charge − nC 12 14 G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD16322Q5 SLPS219B – AUGUST 2009 – REVISED MAY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/–8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 25 V 1 mA 100 nA 1.1 1.4 V VGS = 3V, ID = 20A 5.4 7.2 mΩ VGS = 4.5V, ID = 20A 4.6 5.8 mΩ VGS = 8V, ID = 20A 3.9 5 mΩ VDS = 15V, ID = 20A 106 0.9 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance 1050 1365 Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (4.5V) 6.8 Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 12.5V, f = 1MHz 740 VDS = 12.5V, ID = 20A VDS = 13V, VGS = 0V VDS = 12.5V, VGS = 4.5V, ID = 20A, RG =2Ω pF 950 pF 55 70 pF 1.1 2.2 Ω 9.7 nC 1.3 nC 2.4 nC 1.3 nC 17 nC 6.1 ns 10.7 ns 12.3 ns 3.7 ns Diode Characteristics VSD Diode Forward Voltage ISD = 20A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge VDD = 13V, IF = 20A, di/dt = 300A/ms 19 nC trr Reverse Recovery Time VDD = 13V, IF = 20A, di/dt = 300A/ms 21 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN (1) RqJC Thermal Resistance Junction to Case RqJA Thermal Resistance Junction to Ambient (1) (1) (2) 2 2 (2) TYP MAX UNIT 2.4 °C/W 50 °C/W 2 RqJC is determined with the device mounted on a 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 CSD16322Q5 www.ti.com GATE SLPS219B – AUGUST 2009 – REVISED MAY 2010 GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RqJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Source Max RqJA = 123°C/W when mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0137-02 M0137-01 Spacing Spacing pacing pacing TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – Normalized Thermal Impedance – °C/W 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 P 0.02 0.01 t1 0.01 t2 Typical RqJA = 98°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA Single Pulse 0.001 0.001 0.01 0.1 1 10 100 1k tp – Pulse Duration – s G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 3 CSD16322Q5 SLPS219B – AUGUST 2009 – REVISED MAY 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT 50 VGS = 8V 45 40 35 VGS = 3.5V 30 25 VGS = 2.5V 20 VGS = 2V 15 40 35 TC = 125°C 30 25 TC = 25°C 20 15 10 10 5 5 0 TC = −55°C 0 0 0.5 1 1.5 2 VDS − Drain to Source Voltage − V 1 1.5 1.25 1.75 2 2.5 2.25 2.75 VGS − Gate to Source Voltage − V G001 3 G002 Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics SPACING TSPACING SPACING SPACING 3 10 ID = 20A VDS = 12.5V 9 f = 1MHz VGS = 0V 2.5 C − Capacitance − nF 8 VG − Gate Voltage − V VDS = 5V 45 VGS = 4.5V ID − Drain Current − A ID − Drain Current − A T SPACING 50 7 6 5 4 3 2 2 Coss = Cds + Cgd Ciss = Cgd + Cgs 1.5 1 Crss = Cgd 0.5 1 0 0 0 2 4 6 8 10 12 15 20 SPACING SPACING SPACING SPACING ID = 250mA 1.4 1.2 1 0.8 0.6 0.4 0.2 25 75 125 175 12 11 10 G004 ID = 20A 9 8 7 TC = 125°C 6 5 4 TC = 25°C 3 2 1 0 0 1 2 3 4 5 6 7 VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 25 VDS − Drain to Source Voltage − V Figure 5. Capacitance TC − Case Temperature − °C 4 10 Figure 4. Gate Charge 1.6 −25 5 G003 RDS(on) − On-State Resistance − mW VGS(th) − Gate-Source Threshold Voltage − V Qg − Gate Charge − nC 0 −75 0 14 8 9 10 G006 Figure 7. On-State Resistance vs. Gate to Source Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 CSD16322Q5 www.ti.com SLPS219B – AUGUST 2009 – REVISED MAY 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) SPACING vs SPACING vs 1.2 100 ID = 20A VGS = 4.5V ISD − Source to Drain Current − A Normalized On-State Resistance 1.4 1 0.8 0.6 0.4 0.2 0 −75 10 1 0.1 TC = 25°C 0.01 0.001 0.0001 −25 25 75 125 175 TC − Case Temperature − °C 0 0.2 0.4 0.6 0.8 1 VSD − Source to Drain Voltage − V G007 Figure 8. Normalized On-State Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage SPACING SPACING SPACING SPACING I(AV) − Peak Avalanche Current − A 100 1ms 10 10ms 1 100ms Area Limited by RDS(on) 1s 0.1 0.01 0.01 1.2 G008 1k 1k ID − Drain Current − A TC = 125°C Single Pulse Typical RqJA = 98oC/W (min Cu) 0.1 DC 1 10 100 10 TC = 125°C 1 0.01 100 VD − Drain Voltage − V TC = 25°C 0.1 1 10 t(AV) − Time in Avalanche − ms G009 Figure 10. Maximum Safe Operating Area 100 G010 Figure 11. Single Pulse Unclamped Inductive Switching SPACING SPACING 120 ID − Drain Current − A 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 TC − Case Temperature − °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 5 CSD16322Q5 SLPS219B – AUGUST 2009 – REVISED MAY 2010 www.ti.com MECHANICAL DATA Q5 Package Dimensions K L L c1 E1 E2 b D2 4 4 5 5 e 3 6 3 6 E D1 7 7 2 2 8 8 1 1 q Top View Bottom View Side View c E1 A q Front View M0140-01 DIM MILLIMETERS MAX MIN MAX A 0.950 1.050 0.037 0.039 b 0.360 0.460 0.014 0.018 c 0.150 0.250 0.006 0.010 c1 0.150 0.250 0.006 0.010 D1 4.900 5.100 0.193 0.201 D2 4.320 4.520 0.170 0.178 E 4.900 5.100 0.193 0.201 E1 5.900 6.100 0.232 0.240 E2 3.920 4.12 0.154 e 6 INCHES MIN 1.27 TYP K 0.760 L 0.510 q 0.00 0.162 0.050 0.030 0.710 Submit Documentation Feedback 0.020 0.028 Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 CSD16322Q5 www.ti.com SLPS219B – AUGUST 2009 – REVISED MAY 2010 MILLIMETERS INCHES Recommended PCB Pattern DIM MIN MAX MIN MAX F1 F1 6.205 6.305 0.244 0.248 F2 4.460 4.560 0.176 0.180 F3 4.460 4.560 0.176 0.180 F4 0.650 0.700 0.026 0.028 F5 0.620 0.670 0.024 0.026 F6 0.630 0.680 0.025 0.027 F7 0.700 0.800 0.028 0.031 F8 0.650 0.700 0.026 0.028 F9 0.620 0.670 0.024 0.026 F10 4.900 5.000 0.193 0.197 F11 4.460 4.560 0.176 0.180 F7 F3 8 1 F2 F11 F5 F9 5 4 F6 F8 F4 F10 M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 Q5 Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 R 0.30 TYP M0138-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm, unless otherwise specified. 5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket 6. MSL1 260°C (IR and convection) PbF reflow compatible Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 7 CSD16322Q5 SLPS219B – AUGUST 2009 – REVISED MAY 2010 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A Page • Changed Note1 of the ABSOLUTE MAXIMUM RATINGS From: RqJA = 39°C/W To: Typical RqJA = 39°C/W ..................... 1 • Changed Figure 1 text From: RqJA = 99°C/W To: Typical RqJA = 98°C/W ............................................................................ 3 • Changed Figure 10 text From: RqJA = 99°C/W To: Typical RqJA = 98°C/W .......................................................................... 5 • Changed Figure 11 X- axis values ....................................................................................................................................... 5 Changes from Revision A (April 2010) to Revision B Page • Changed RDS(on) - VGS = 3V in the Electrical Characteristics table From: 7 To: 7.2 in the max column ............................... 2 • Deleted the Package Marking Information section ............................................................................................................... 7 8 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16322Q5 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD16322Q5 ACTIVE VSON-CLIP DQH 8 2500 RoHS-Exempt & Green SN Level-1-260C-UNLIM -55 to 150 CSD16322 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of