CSD16342Q5A

CSD16342Q5A www.ti.com SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16342Q5A FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5mm x 6mm Plastic Package • Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.8 nC Qgd Gate Charge Gate to Drain RDS(on) Top View S 2 7 D S 3 6 D VGS = 4.5V 4.3 mΩ VGS = 8V 3.8 mΩ Threshold Voltage 0.85 V Package Media Qty Ship CSD16342Q5A SON 5 × 6 Plastic Package 13-inch reel 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. D mΩ TA = 25°C unless otherwise stated DESCRIPTION 8 6.1 Device VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C(2) 131 A PD Power Dissipation(1) 3 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 40A, L = 0.1mH, RG = 25Ω 80 mJ ID 1 nC VGS = 2.5V ORDERING INFORMATION Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control or Synchronous FET Applications S 1.2 Drain to Source On Resistance Vth APPLICATIONS • VDS (1) Typical RθJA = 40°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% D G 5 4 D P0095-01 RDS(ON) vs VGS Gate Charge 10 ID = 20A 18 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance - mΩ 20 16 14 12 10 8 6 4 TC = 25°C TC = 125ºC 2 0 0 1 2 3 4 5 6 7 VGS - Gate-to- Source Voltage - V 8 9 10 G001 ID =20A VDD = 12.5V 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 Qg - Gate Charge - nC (nC) 10 12 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated CSD16342Q5A SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/-8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA RDS(on) gfs Drain to Source On Resistance Transconductance 25 0.6 V 1 μA 100 nA 0.85 1.1 V VGS = 2.5V, IDS = 20A 6.1 7.8 mΩ VGS = 4.5V, IDS = 20A 4.3 5.5 mΩ VGS = 8V, IDS = 20A 3.8 4.7 mΩ VDS = 15V, IDS = 20A 91 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 1050 1350 pF 730 950 CRSS pF Reverse Transfer Capacitance 53 69 pF Rg Series Gate Resistance 1.5 3 Ω Qg Gate Charge Total (4.5V) 6.8 7.1 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 12.5V, f = 1MHz VDS = 12.5V, ID = 20A VDS = 13V, VGS = 0V VDS = 12.5V, VGS = 4.5V ID = 20A RG = 2Ω 0.9 nC 1.9 nC 1.2 nC 13.7 nC 5.2 ns 16.6 ns 13.4 ns 3.1 ns Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IS = 20A, VGS = 0V 0.8 VDD = 13V, IF = 20A, di/dt = 300A/μs 1 V 14.5 nC 20 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER RθJC RθJA (1) (2) 2 Thermal Resistance Junction to Case (1) Thermal Resistance Junction to Ambient (1) (2) MIN TYP MAX UNIT 1.2 °C/W 50 °C/W RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A CSD16342Q5A www.ti.com GATE SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 GATE Source Source Max RθJA = 123°C/W when mounted on minimum pad area of 2 oz. Cu. Max RθJA = 50°C/W when mounted on 1 inch2 of 2 oz. Cu. DRAIN DRAIN M0161-02 M0161-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A 3 CSD16342Q5A SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 60 80 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A VDS = 5V 50 40 30 VGS =8.0V VGS =4.5V VGS =3.5V VGS =2.5V VGS =2.0V 20 10 0 0 0.5 1 1.5 60 50 40 30 20 TC = 125°C TC = 25°C TC = −55°C 10 0 2 VDS - Drain-to-Source Voltage - V 70 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VGS - Gate-to-Source Voltage - V G001 Figure 2. Saturation Characteristics G001 Figure 3. Transfer Characteristics ID =20A VDD = 12.5V 9 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 2.0 8 C − Capacitance − nF VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 1.5 1.0 0.5 1 0 0 2 4 6 8 10 0 12 Qg - Gate Charge - nC (nC) 5 Figure 4. Gate Charge 20 25 G001 20 RDS(on) - On-State Resistance - mΩ ID = 20A VGS(th) - Threshold Voltage - V 15 Figure 5. Capacitance 1.5 1.2 0.9 0.6 0.3 0 −75 −25 25 75 125 TC - Case Temperature - ºC Figure 6. Threshold Voltage vs. Temperature 4 10 VDS - Drain-to-Source Voltage - V G001 175 ID = 20A 18 16 14 12 10 8 6 4 TC = 25°C TC = 125ºC 2 0 0 1 2 3 4 5 6 7 8 9 VGS - Gate-to- Source Voltage - V G001 10 G001 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A CSD16342Q5A www.ti.com SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 1.6 100 ID = 20A VGS = 4.5V ISD − Source-to-Drain Current - A Normalized On-State Resistance 1.8 1.4 1.2 1 0.8 0.6 0.4 0.2 −75 −25 25 75 125 TC - Case Temperature - ºC 1 0.1 0.01 0.001 0.0001 175 TC = 25°C TC = 125°C 10 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage - V G001 Figure 8. Normalized On Resistance vs. Temperature G001 Figure 9. Typical Diode Forward Voltage I(AV) - Peak Avalanche Current - A 100 TC = 125°C TC = 25°C 10 1 0.01 0.1 1 t(AV) - Time in Avalanche - ms Figure 10. Maximum Safe Operating Area 10 G001 Figure 11. Single Pulse Unclamped Inductive Switching − IDS - Drain- to- Source Current - A 120.0 100.0 80.0 60.0 40.0 20.0 0.0 −50 −25 0 25 50 75 100 125 TC - Case Temperature - ºC 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A 5 CSD16342Q5A SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 www.ti.com MECHANICAL DATA Q5A Package Dimensions E2 L K H 2 7 8 8 2 7 1 1 q 3 5 4 6 3 4 D2 6 D1 5 e b L1 Top View Bottom View Side View q A c E1 E Front View M0135-01 DIM MILLIMETERS NOM MAX MIN NOM MAX A 0.90 1.00 1.10 0.037 0.039 0.043 b 0.33 0.41 0.51 0.000 0.000 0.002 c 0.20 0.25 0.34 0.011 0.013 0.016 D1 4.80 4.90 5.00 0.006 0.008 0.010 D2 3.61 3.81 4.02 0.126 0.130 0.134 E 5.90 6.00 6.10 – – – E1 5.70 5.75 5.80 0.065 0.069 0.071 E2 3.38 3.58 3.78 0.126 0.130 0.134 e 1.17 1.27 1.37 – – – H 0.41 0.56 0.71 0.093 0.096 0.100 K 6 INCHES MIN 1.10 L 0.51 0.61 0.71 0.014 0.018 0.022 L1 0.06 0.13 0.20 0.014 0.018 0.022 θ 0° 12° – – – θ – – – – – – Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A CSD16342Q5A www.ti.com SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 Recommended PCB Pattern 4.900 (0.193) 0.605 (0.024) 5 4 0.630 (0.025) 0.620 (0.024) 1.270 (0.050) 4.460 (0.176) 8 1 0.650 (0.026) 3.102 (0.122) 0.700 (0.028) 1.798 (0.071) M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. Stencil Recommendation 0.500 (0.020) 1.235 (0.049) 0.500 (0.020) 1.585 (0.062) 4 5 0.450 (0.018) 1.570 (0.062) 0.620 (0.024) 1.270 (0.050) 1.570 (0.062) 4.260 (0.168) 8 1 PCB Pattern 0.632 (0.025) 3.037 (0.120) 1.088 (0.043) Stencil Opening M0209-01 NOTE: Dimensions are in mm (inches). Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A 7 CSD16342Q5A SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 www.ti.com Q5A Tape and Reel Information K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 +0.10 2.00 ±0.05 Ø 1.50 –0.00 1.75 ±0.10 5.50 ±0.05 12.00 ±0.30 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN R 0.30 TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket Spacer REVISION HISTORY Changes from Original (February 2012) to Revision A • 8 Page Changed the device status From: Product Preview To: Production ..................................................................................... 1 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): CSD16342Q5A PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD16342Q5A ACTIVE VSONP DQJ 8 2500 RoHS-Exempt & Green SN Level-1-260C-UNLIM -55 to 150 CSD16342 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of