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CSD16401Q5
SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
CSD16401Q5 25-V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
1
Product Summary
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
SON 5-mm × 6-mm Plastic Package
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
25
V
Qg
Gate Charge, Total (4.5 V)
21
nC
Qgd
Gate Charge, Gate-to-Drain
2 Applications
RDS(on)
Drain-to-Source
On-Resistance
•
VGS(th)
Threshold Voltage
•
Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom and
Computing Systems
Optimized for Synchronous FET Applications
5.2
nC
VGS = 4.5 V
1.8
VGS = 10 V
1.3
mΩ
1.5
V
Device Information(1)
DEVICE
MEDIA
CSD16401Q5
3 Description
This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™
power MOSFET has been designed to minimize
losses in power conversion applications.
13-Inch Reel
QTY
PACKAGE
SHIP
2500
SON
5.00-mm × 6.00-mm
Plastic Package
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
Top View
S
S
TA = 25°C
8
1
D
7
2
D
VALUE
UNIT
VDS
Drain-to-Source Voltage
25
V
VGS
Gate-to-Source Voltage
–12 to 16
V
ID
Continuous Drain Current (Package Limited)
100
Continuous Drain Current (Silicon Limited),
TC = 25°C
261
Continuous Drain Current
S
D
6
3
IDM
PD
D
G
5
4
D
P0094-01
240
Power Dissipation (1)
3.1
Power Dissipation, TC = 25°C
156
Operating Junction,
Storage Temperature
EAS
Avalanche Energy, Single Pulse
ID = 100 A, L = 0.1 mH, RG = 25 Ω
(2)
A
38
Pulsed Drain Current, TA = 25°C (2)
TJ,
Tstg
(1)
A
W
–55 to 150
°C
500
mJ
RθJA = 40°C/W on 1-in2 (6.45-cm2) Cu 2-oz (0.071-mm) thick
on 0.06-in (1.52-mm) thick FR4 PCB.
Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
RDS(ON) vs VGS
Gate Charge
12
6
TC = 25° C, I D = 40 A
TC = 125° C, I D = 40 A
5
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (m:)
(1)
4
3
2
1
ID = 40 A
VDS = 12.5 V
10
8
6
4
2
0
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
12
D007
0
10
20
30
40
Qg - Gate Charge (nC)
50
60
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD16401Q5
SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1
6.2
6.3
6.4
6.5
7
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5 Package Dimensions .......................................... 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Q5 Tape and Reel Information................................ 10
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (August 2015) to Revision C
Page
•
Added VDS = 5 V to Figure 3 .................................................................................................................................................. 4
•
Added Receiving Notification of Documentation Updates section ......................................................................................... 7
Changes from Revision A (September 2010) to Revision B
Page
•
Added part number to title ...................................................................................................................................................... 1
•
Enhanced Description............................................................................................................................................................. 1
•
Added Device and Documentation Support section and Mechanical, Packaging, and Orderable Information section ......... 1
•
Updated pulsed current ......................................................................................................................................................... 1
•
Updated Figure 1 to a normalized RθJC curve ........................................................................................................................ 4
•
Updated the SOA in Figure 10 ............................................................................................................................................... 5
Changes from Original (August 2009) to Revision A
Page
•
Deleted environmental bullets from Features list ................................................................................................................... 1
•
Deleted Package Marking Information section at the end of the data sheet........................................................................ 10
2
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SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 20 V
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –12 V to 16 V
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain-to-source on-resistance
gfs
Transconductance
25
1.2
V
1
μA
100
nA
V
1.5
1.9
VGS = 4.5 V, ID = 40 A
1.8
2.3
VGS = 10 V, ID = 40 A
1.3
1.6
VDS = 15 V, ID = 40 A
168
mΩ
S
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
175
230
Rg
Series gate resistance
1.2
2.4
Ω
Qg
Gate charge total (4.5 V)
21
29
nC
Qgd
Gate charge, gate-to-drain
Qgs
Gate charge, gate-to-source
Qg(th)
Gate charge at Vth
QOSS
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz
VDS = 12.5 V, ID = 40 A
VDS = 15 V, VGS = 0 V
VDS = 12.5 V, VGS = 4.5 V, ID = 40 A
RG = 2 Ω
3150 4100
pF
2530 3300
pF
pF
5.2
nC
8.3
nC
4.8
nC
55
nC
16.6
ns
30
ns
20
ns
12.7
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
IS = 40 A, VGS = 0 V
0.85
1
V
Qrr
Reverse recovery charge
VDD = 15 V, IF = 40 A, di/dt = 300 A/μs
72
nC
trr
Reverse recovery time
VDD = 15 V, IF = 40 A, di/dt = 300 A/μs
45
ns
5.2 Thermal Information
TA = 25°C (unless otherwise noted)
MAX
UNIT
RθJC
Thermal resistance, junction-to-case (1)
THERMAL METRIC
0.8
°C/W
RθJA
Thermal resistance, junction-to-ambient (1) (2)
50
°C/W
(1)
(2)
MIN
TYP
RθJC is determined with the device mounted on a 1-in (2.54-cm) square, 2-oz(0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm ×
3.81-cm), 0.06-in (1.52-mm) thick FR4 board. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
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3
CSD16401Q5
SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
GATE
www.ti.com
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RθJA = 50°C/W
when mounted on 1 in2
(6.45 cm2) of 2-oz
(0.071-mm) thick Cu.
Source
Max RθJA = 125°C/W
when mounted on
minimum pad area of
2-oz (0.071-mm) thick
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise noted)
Figure 1. Transient Thermal Impedance
4
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SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise noted)
100
80
60
40
20
VGS = 4.5 V
VGS = 10 V
80
70
60
50
40
30
20
10
0
0
0.05
0.1
0.15
0.2
0.25
VDS - Drain-to-Source Voltage (V)
TC = 125° C
TC = 25° C
TC = -55° C
90
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
100
0
1.5
0.3
2
2.5
3
VGS - Gate-to-Source Voltage (V)
D002
3.5
D003
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
50000
10
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
10000
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
12
8
6
4
1000
100
2
10
0
0
10
20
30
40
Qg - Gate Charge (nC)
ID = 40 A
50
0
60
5
D004
D005
Figure 5. Capacitance
2.1
6
RDS(on) - On-State Resistance (m:)
VGS(th) - Threshold Voltage (V)
25
VDS = 12.5 V
Figure 4. Gate Charge
1.9
1.7
1.5
1.3
1.1
0.9
0.7
-75
10
15
20
VDS - Drain-to-Source Voltage (V)
TC = 25° C, I D = 40 A
TC = 125° C, I D = 40 A
5
4
3
2
1
0
-50
-25
0
25
50
75 100
TC - Case Temperature (° C)
125
150
175
0
2
D006
4
6
8
VGS - Gate-to-Source Voltage (V)
10
12
D007
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-Resistance vs Gate Voltage
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SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
www.ti.com
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise noted)
100
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-75
TC = 25° C
TC = 125° C
VGS = 10 V
ISD - Source-to-Drain Current (A)
Normalized On-State Resistance
1.6
10
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (° C)
125
150
175
0
0.2
D008
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
1
D009
ID = 40 A
Figure 8. On-Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
1000
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
1000
100
10
1
100 ms
10 ms
0.1
0.1
1 ms
100 µs
1
10
VDS - Drain-to-Source Voltage (V)
100
TC = 25q C
TC = 125q C
100
10
1
0.001
0.01
D010
0.1
1
TAV - Time in Avalanche (ms)
10
100
D011
Single pulse, max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single-Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current (A)
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125
TC - Case Temperature (° C)
150
175
D012
Figure 12. Maximum Drain Current vs Temperature
6
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SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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CSD16401Q5
SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Q5 Package Dimensions
K
L
L
c1
E1
E2
b
D2
4
4
5
5
e
3
6
3
6
E
D1
7
7
2
2
8
8
1
1
q
Top View
Bottom View
Side View
A
q
c
E1
Front View
M0140-01
MILLIMETERS
DIM
MIN
INCHES
MAX
MIN
TYP
MAX
A
0.950
1.050
0.037
0.039
b
0.360
0.460
0.014
0.018
c
0.150
0.250
0.006
0.010
c1
0.150
0.250
0.006
0.010
D1
4.900
5.100
0.193
0.201
D2
4.320
4.520
0.170
0.178
E
4.900
5.100
0.193
0.201
E1
5.900
6.100
0.232
0.240
E2
3.920
4.12
0.154
e
8
TYP
1.27
K
0.760
L
0.510
θ
0.00
0.162
0.050
0.030
0.710
0.020
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0.028
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SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
7.2 Recommended PCB Pattern
F1
F7
8
F3
1
F2
F11
F5
F9
5
4
F6
F8
F4
F10
M0139-01
DIM
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.460
4.560
0.176
0.180
F3
4.460
4.560
0.176
0.180
F4
0.650
0.700
0.026
0.028
F5
0.620
0.670
0.024
0.026
F6
0.630
0.680
0.025
0.027
F7
0.700
0.800
0.028
0.031
F8
0.650
0.700
0.026
0.028
F9
0.620
0.670
0.024
0.026
F10
4.900
5.000
0.193
0.197
F11
4.460
4.560
0.176
0.180
For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques
(SLPA005).
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SLPS200C – AUGUST 2009 – REVISED JANUARY 2018
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K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
7.3 Q5 Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
R 0.30 TYP
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
M0138-01
Notes:
1. 10-sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm.
3. Material: black, static-dissipative polystyrene.
4. All dimensions are in mm (unless otherwise specified).
5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket.
6. MSL1 260°C (IR and convection) PbF reflow compatible.
10
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD16401Q5
ACTIVE
VSON-CLIP
DQH
8
2500
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
CSD16401
CSD16401Q5T
ACTIVE
VSON-CLIP
DQH
8
250
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
CSD16401
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of