CSD16413Q5A
www.ti.com
SLPS199A – AUGUST 2009 – REVISED APRIL 2010
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16413Q5A
FEATURES
1
•
•
•
•
•
•
•
2
PRODUCT SUMMARY
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm × 6mm Plastic Package
VDS
Drain to Source Voltage
25
V
Qg
Gate Charge Total (4.5V)
9
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
VGS(th)
Threshold Voltage
•
nC
4.1
mΩ
VGS = 10V
3.1
mΩ
1.6
V
ORDERING INFORMATION
Device
Package
CSD16413Q5A
SON 5 × 6 Plastic
Package
APPLICATIONS
•
2.5
VGS = 4.5V
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control or Synchronous FET
Applications
Media
13-inch reel
Qty
Ship
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
VALUE
UNIT
VDS
Drain to Source Voltage
25
V
DESCRIPTION
VGS
Gate to Source Voltage
+16 / –12
V
ID
Continuous Drain Current, TC = 25°C
100
A
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Continuous Drain Current(1)
24
A
IDM
Pulsed Drain Current, TA = 25°C(2)
156
A
Top View
PD
Power Dissipation(1)
3.1
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, single pulse
ID = 46A, L = 0.1mH, RG = 25Ω
106
mJ
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
TA = 25°C unless otherwise stated
(1) RqJA = 41°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%
D
P0093-01
RDS(ON) vs VGS
Gate Charge
12
ID = 24A
18
10
16
VG − Gate Voltage − V
RDS(on) − On-State Resistance − mΩ
20
14
12
10
TC = 125°C
8
6
4
ID = 24A
VDS = 12.5V
8
6
4
2
2
TC = 25°C
0
0
2
4
6
8
VGS − Gate to Source Voltage − V
10
12
G006
0
0.0
2.5
5.0
7.5
10.0
12.5
Qg − Gate Charge − nC
15.0
17.5
20.0
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
CSD16413Q5A
SLPS199A – AUGUST 2009 – REVISED APRIL 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +16/-12V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
25
V
1
mA
100
nA
1.6
1.9
V
VGS = 4.5V, ID = 24A
4.1
5.6
mΩ
VGS = 10V, ID = 24A
3.1
3.9
mΩ
VDS = 15V, ID = 24A
95
1.2
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
1370
1780
pF
1060
1380
CRSS
pF
Reverse Transfer Capacitance
84
109
pF
Rg
Series Gate Resistance
0.9
1.8
Ω
Qg
Gate Charge Total (4.5V)
9
11.7
nC
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = 12.5V f = 1MHz
VDS = 12.5V, ID = 24A
VDS = 13.1V, VGS = 0V
VDS = 12.5V, VGS = 4.5V ID = 24A
RG = 5Ω
2.5
nC
3.5
nC
2.2
nC
21
nC
9.1
ns
15.9
ns
10.7
ns
5.7
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 24A, VGS = 0V
Qrr
Reverse Recovery Charge
VDD = 13.1V, IF = 24A, di/dt = 300A/ms
0.85
32
1
nC
V
trr
Reverse Recovery Time
VDD = 13.1V, IF = 24A, di/dt = 300A/ms
28
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJC
R qJA
(1)
(2)
2
Thermal Resistance Junction to Case (1)
Thermal Resistance Junction to Ambient
(1) (2)
MIN
TYP
MAX
UNIT
2.6
°C/W
51
°C/W
RqJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in .060 inch thick FR4 board. RqJC is
specified by design while RqJA is determined by the user’s board design.
Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.
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Product Folder Link(s): CSD16413Q5A
CSD16413Q5A
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SLPS199A – AUGUST 2009 – REVISED APRIL 2010
GATE
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RqJA = 51°C/W
when mounted on 1
inch2 of 2 oz. Cu.
Source
Max RqJA = 118°C/W
when mounted on
minimum pad area of 2
oz. Cu.
DRAIN
DRAIN
M0137-02
M0137-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – Normalized Thermal Impedance
10
1
0.5
0.3
Duty Cycle = t1/t2
0.1
0.1
0.05
0.01
P
t1
0.02
0.01
t2
RqJA = 95°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1k
tp – Pulse Duration – s
G012
Figure 1. Transient Thermal Impedance
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CSD16413Q5A
SLPS199A – AUGUST 2009 – REVISED APRIL 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
80
80
60
VGS = 4.5V
VGS = 3V
50
VGS = 3.5V
40
30
20
VGS = 2.5V
10
0
0.0
VDS = 5V
70
VGS = 10V
ID − Drain Current − A
ID − Drain Current − A
70
60
50
TC = 125°C
40
30
TC = 25°C
20
TC = −55°C
10
0.5
1.0
1.5
2.0
2.5
0
1.0
3.0
VDS − Drain to Source Voltage − V
1.5
C − Capacitance − nF
VG − Gate Voltage − V
6
4
G002
3.0
COSS = CDS + CGD
2.5
CISS = CGD + CGS
2.0
1.5
1.0
CRSS = CGD
0.5
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
Qg − Gate Charge − nC
0
5
10
15
20
VDS − Drain to Source Voltage − V
G003
Figure 4. Gate Charge
25
G004
Figure 5. Capacitance
2.5
20
RDS(on) − On-State Resistance − mΩ
VGS(th) − Threshold Voltage − V
4.0
f = 1MHz
VGS = 0V
3.5
2
ID = 250µA
2.0
1.5
1.0
0.5
ID = 24A
18
16
14
12
10
TC = 125°C
8
6
4
2
TC = 25°C
0
−25
25
75
125
175
TC − Case Temperature − °C
0
2
4
6
8
10
VGS − Gate to Source Voltage − V
G005
Figure 6. Threshold Voltage vs. Temperature
4
3.5
4.0
ID = 24A
VDS = 12.5V
8
0.0
−75
3.0
Figure 3. Transfer Characteristics
12
0
0.0
2.5
VGS − Gate to Source Voltage − V
G001
Figure 2. Saturation Characteristics
10
2.0
12
G006
Figure 7. On Resistance vs. Gate Voltage
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Product Folder Link(s): CSD16413Q5A
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SLPS199A – AUGUST 2009 – REVISED APRIL 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
1.4
100
ID = 24A
VGS = 10V
ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
10
1
TC = 125°C
0.1
TC = 25°C
0.01
0.001
0.0001
−25
25
75
125
175
TC − Case Temperature − °C
0.0
0.8
1.0
1.2
G008
100
I(AV) − Peak Avalanche Current − A
100
ID − Drain Current − A
0.6
Figure 9. Typical Diode Forward Voltage
1k
1ms
10
10ms
100ms
Area Limited
by RDS(on)
1s
0.1
Single Pulse
RqJA = 95oC/W (min Cu)
0.01
0.01
0.4
VSD − Source to Drain Voltage − V
G007
Figure 8. On Resistance vs. Temperature
1
0.2
0.1
DC
1
10
10
TC = 125°C
1
0.001
100
VDS − Drain To Source Voltage − V
TC = 25°C
0.01
0.1
1
10
t(AV) − Time in Avalanche − ms
G009
Figure 10. Maximum Safe Operating Area
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
120
ID − Drain Current − A
100
80
60
40
20
0
−50
−25
0
25
50
75
100
125
TC − Case Temperature − °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
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CSD16413Q5A
SLPS199A – AUGUST 2009 – REVISED APRIL 2010
www.ti.com
MECHANICAL DATA
Q5A Package Dimensions
L
E2
H
K
7
D2
3
4
b
4
5
5
6
3
6
e
D1
7
2
2
8
8
1
1
q
L1
Top View
Bottom View
Side View
c
A
q
E1
E
Front View
M0135-01
DIM
6
MILLIMETERS
MIN
NOM
MAX
A
0.90
1.00
1.10
b
0.33
0.41
0.51
c
0.20
0.25
0.30
D1
4.80
4.90
5.00
D2
3.61
3.81
3.96
E
5.90
6.00
6.10
E1
5.70
5.75
5.80
E2
3.38
3.58
3.78
e
1.27 BSC
H
0.41
0.51
0.61
K
1.10
L
0.51
0.61
0.71
L1
0.06
0.13
0.20
q
0°
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12°
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16413Q5A
CSD16413Q5A
www.ti.com
SLPS199A – AUGUST 2009 – REVISED APRIL 2010
MILLIMETERS
INCHES
Recommended PCB Pattern
DIM
MIN
MAX
MIN
MAX
F1
F1
6.205
6.305
0.244
0.248
F2
4.46
4.56
0.176
0.18
F3
4.46
4.56
0.176
0.18
F4
0.65
0.7
0.026
0.028
F5
0.62
0.67
0.024
0.026
F6
0.63
0.68
0.025
0.027
F7
0.7
0.8
0.038
0.031
F8
0.65
0.7
0.026
0.028
F9
0.62
0.67
0.024
0.026
F7
F3
8
1
F2
F11
F5
F9
5
4
F6
F10
4.9
5
0.193
0.197
F11
4.46
4.56
0.176
0.18
F8
F4
F10
M0139-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
Q5A Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm
3. Material:black static dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket
6. MSL1 260°C (IR and Convection) PbF Reflow Compatible
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CSD16413Q5A
SLPS199A – AUGUST 2009 – REVISED APRIL 2010
www.ti.com
REVISION HISTORY
Changes from Original (August 2009) to Revision A
•
8
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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Product Folder Link(s): CSD16413Q5A
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD16413Q5A
ACTIVE
VSONP
DQJ
8
2500
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
CSD16413
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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