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CSD17309Q3
SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
•
1
Product Summary
Optimized for 5 V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3 mm × 3.3 mm Plastic Package
TA = 25°C
TYPICAL VALUE
Drain-to-Source Voltage
30
V
Qg
Gate Charge Total (4.5 V)
7.5
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
VGS(th)
This 30 V, 4.2 mΩ NexFET™ power MOSFET is
designed to minimize losses in power conversion
applications and optimized for 5 V gate drive
applications.
4.9
VGS = 8 V
4.2
Threshold Voltage
mΩ
1.2
V
Device
Media
Qty
Package
Ship
13-Inch Reel
2500
CSD17309Q3T
7-Inch Reel
250
SON 3.3 × 3.3 mm
Plastic Package
Tape and
Reel
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
30
V
VGS
Gate-to-Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
60
A
Continuous Drain Current(1)
20
A
IDM
Pulsed Drain Current, TA = 25°C(2)
112
A
PD
Power Dissipation(1)
2.8
W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, Single Pulse
ID = 57 A, L = 0.1 mH, RG = 25 Ω
162
mJ
ID
8
1
D
7
2
D
D
6
3
D
G
VGS = 4.5 V
CSD17309Q3
Top View
S
6.3
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
S
nC
VGS = 3 V
.
Ordering Information(1)
Notebook Point of Load
Point of Load Synchronous Buck in Networking,
Telecom, and Computing Systems
S
1.7
Drain-to-Source On-Resistance
2 Applications
•
•
UNIT
VDS
5
4
D
(1) Typical RθJA = 45°C/W when mounted on a 1 inch2 (6.45
cm2), 2 oz. (0.071 mm thick) Cu pad on a
0.06 inch (1.52 mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%.
P0095-01
Spacing
RDS(on) vs VGS
Gate Charge
RDS(on) - On-State Resistance - mΩ
16
8
ID = 18A
14
ID = 18A
VDS = 15V
7
12
6
10
5
T C = 125°C
8
4
6
3
4
2
T C = 25°C
2
1
0
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
0
2
4
6
8
Qg - Gate Charge - nC
10
12
G003
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD17309Q3
SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 8
6.1 Trademarks ............................................................... 8
6.2 Electrostatic Discharge Caution ................................ 8
6.3 Glossary .................................................................... 8
7
Mechanical, Packaging, and Orderable
Information ............................................................. 9
7.1
7.2
7.3
7.4
Q3 Package Dimensions .......................................... 9
Recommended PCB Pattern................................... 10
Recommended Stencil Opening ............................. 10
Q3 Tape and Reel Information................................ 11
4 Revision History
Changes from Revision A (October 2010) to Revision B
Page
•
................................................................................................................................................................................................ 1
•
Added 7" reel to Ordering Information ................................................................................................................................... 1
•
Updated mechanical information ........................................................................................................................................... 9
Changes from Original (March 2010) to Revision A
•
2
Page
Deleted the Package Marking Information section .............................................................................................................. 11
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SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 24 V
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = +10 / –8 V
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain-to-Source On-Resistance
gƒs
Transconductance
30
0.9
V
1
μA
100
nA
1.2
1.7
V
VGS = 3 V, ID = 18 A
6.3
8.5
mΩ
VGS = 4.5 V, ID = 18 A
4.9
6.3
mΩ
VGS = 8 V, ID = 18 A
4.2
5.4
mΩ
VDS = 15 V, ID = 18 A
67
S
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
1150
1440
pF
COSS
Output Capacitance
580
750
pF
CRSS
Reverse Transfer Capacitance
43
56
pF
Rg
Series Gate Resistance
1.2
2.4
Ω
Qg
Gate Charge Total (4.5 V)
7.5
10
nC
Qgd
Gate Charge Gate-to-Drain
1.7
nC
Qgs
Gate Charge Gate-to-Source
2.5
nC
Qg(th)
Gate Charge at Vth
1.3
nC
QOSS
Output Charge
15
nC
td(on)
Turn On Delay Time
6.1
ns
tr
Rise Time
9.9
ns
td(off)
Turn Off Delay Time
13.2
ns
tƒ
Fall Time
3.6
ns
VDS = 15 V, ID = 18 A
VDS = 13 V, VGS = 0 V
VDS = 15 V, VGS = 4.5 V,
ID = 18 A , RG = 2 Ω
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
IDS = 18 A, VGS = 0 V
0.85
VDD = 13 V, IF = 18 A,
di/dt = 300 A/μs
30
1
nC
V
23
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
RθJC
Junction-to-Case Thermal Resistance (1)
2.0
RθJA
Junction-to-Ambient Thermal Resistance (1) (2)
57
(1)
(2)
UNIT
°C/W
RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), Cu pad on a 1.5 inches × 1.5 inches thick FR4 PCB. RθJC is
specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1 inch2 2-oz.Cu.
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CSD17309Q3
SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
GATE
www.ti.com
GATE
Source
Source
Max RθJA = 57°C/W
when mounted on
1 inch2 (6.45 cm2) of
2 oz. (0.071 mm thick)
Cu.
Max RθJA = 174°C/W
when mounted on a
minimum pad area of
2 oz. (0.071 mm thick)
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
ZqJA - Normalized Thermal Impedance
10
1
0.5
0.3
0.1
Duty Cycle = t1/t2
0.1
0.05
0.01
P
0.02
0.01
t1
t2
Typical RqJA = 139°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
tp - Pulse Duration - s
10
100
1k
G012
Figure 1. Transient Thermal Impedance
4
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SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
Typical MOSFET Characteristics (continued)
50
50
45
45
IDS - Drain-to-Source Current - A
IDS - Drain-to-Source Current - A
(TA = 25°C unless otherwise stated)
40
35
VGS = 8V
30
VGS = 4.5V
25
20
VGS = 3.5V
15
VGS = 3V
10
VGS = 2.5V
5
VDS = 5V
T C = -55°C
40
35
30
T C = 25°C
25
20
T C = 125°C
15
10
5
0
0
0
0.2
0.4
0.6
0.8
VDS - Drain-to-Source Voltage - V
1
1
1.2
1.4
G001
Figure 2. Saturation Characteristics
1.6 1.8
2
2.2 2.4 2.6
VGS - Gate-to-Source Voltage - V
2.8
3
G002
Figure 3. Transfer Characteristics
3
8
ID = 18A
VDS = 15V
7
2.5
C - Capacitance - nF
6
5
4
3
2
Coss = Cds + Cgd
2
Ciss = Cgd + Cgs
1.5
1
0.5
1
f = 1MHz
VGS = 0V
Crss = CGgd
0
0
0
2
4
6
8
Qg - Gate Charge - nC
10
12
0
G003
Figure 4. Gate Charge
5
10
15
20
VDS - Drain-to-Source Voltage - V
25
30
G004
Figure 5. Capacitance
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CSD17309Q3
SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
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Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
16
1.6
VGS(th) - Threshold Voltage - V
1.4
RDS(on) - On-State Resistance - mΩ
ID = 250µA
1.2
1
0.8
0.6
0.4
0.2
0
-75
25
75
T C - Case Temperature - °C
125
6
4
T C = 25°C
2
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
Figure 7. On-State Resistance vs Gate-to-Source Voltage
100
ID = 18A
VGS = 8V
ISD - Source-to-Drain Current - A
Normalized On-State Resistance
T C = 125°C
8
G005
1.2
1
0.8
0.6
0.4
10
1
T C = 125°C
0.1
0.01
T C = 25°C
0.001
0.0001
-25
25
75
T C - Case Temperature - °C
125
175
0
0.2
G007
Figure 8. Normalized On-State Resistance vs Temperature
6
10
0
175
1.6
0.2
-75
12
0
-25
Figure 6. Threshold Voltage vs Temperature
1.4
ID = 18A
14
0.4
0.6
0.8
VSD - Source-to-Drain Voltage - V
1
G008
Figure 9. Typical Diode Forward Voltage
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SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
1k
I(AV) - Peak Avalanche Current - A
IDS - Drain-to-Source Current - A
1k
100
1ms
10
10ms
1
100ms
11110
Area Limited
by RDS(on)
0.1
1s
Single Pulse
Typical R θJA = 139°C/W (min Cu)
0.01
0.01
DC
0.1
1
10
VDS - Drain-to-Source Voltage - V
100
100
T C = 25°C
10
T C = 125°C
1
0.01
0.1
1
10
t(AV) - Time in Avalanche - ms
G009
Figure 10. Maximum Safe Operating Area (SOA)
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current - A
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125
T C - Case Temperature - °C
150
175
G011
Figure 12. Maximum Drain Current vs Temperature
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CSD17309Q3
SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
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6 Device and Documentation Support
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
8
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CSD17309Q3
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SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Q3 Package Dimensions
DIM
MILLIMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
A
0.950
1.000
1.100
0.037
0.039
0.043
A1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.280
0.340
0.400
0.011
0.013
0.016
b1
0.310 NOM
0.012 NOM
c
0.150
0.200
0.250
0.006
0.008
0.010
D
3.200
3.300
3.400
0.126
0.130
0.134
D2
1.650
1.750
1.800
0.065
0.069
0.071
d
0.150
0.200
0.250
0.006
0.008
0.010
d1
0.300
0.350
0.400
0.012
0.014
0.016
E
3.200
3.300
3.400
0.126
0.130
0.134
E2
2.350
2.450
2.550
0.093
0.096
0.100
0.550
0.014
e
H
0.650 TYP
0.35
K
0.450
0.026
0.650 TYP
0.018
0.022
0.026 TYP
L
0.35
0.450
0.550
0.014
0.018
0.022
L1
0
—
0
0
—
0
θ
0
—
0
0
—
0
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CSD17309Q3
SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
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7.2 Recommended PCB Pattern
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
7.3 Recommended Stencil Opening
All dimensions are in mm, unless otherwise specified.
10
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SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014
1.75 ±0.10
7.4 Q3 Tape and Reel Information
4.00 ±0.10 (See Note 1)
Ø 1.50
+0.10
–0.00
3.60
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
2.00 ±0.05
M0144-01
Notes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2
2. Camber not to exceed 1 mm IN 100 mm, noncumulative over 250 mm
3. Material: black static dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified).
5. Thickness: 0.30 ±0.05 mm
6. MSL1 260°C (IR and Convection) PbF-Reflow compatible
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11
PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD17309Q3
ACTIVE
VSON-CLIP
DQG
8
2500
RoHS-Exempt
& Green
SN
Level-1-260C-UNLIM
-55 to 150
CSD17309
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
