CSD17577Q3A

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 CSD17577Q3A 30 V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free RoHS Compliant Halogen Free SON 3.3 mm × 3.3 mm Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 12 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems Optimized for Control, and Sync FET Applications 3 Description This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications. Top Icon 4.0 mΩ 1.4 V QTY MEDIA PACKAGE SHIP 13-Inch Reel CSD17577Q3AT 250 7-Inch Reel SON 3.3 × 3.3 mm Plastic Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 35 Continuous Drain Current (Silicon limited), TC = 25°C 83 D ID S 2 7 D IDM 4 VGS = 10 V 2500 8 G mΩ DEVICE 1 3 nC 5.3 CSD17577Q3A S S 2.5 VGS = 4.5 V Ordering Information(1) 2 Applications • UNIT VDS 6 D 5 D PD D Continuous Drain Current (1) 19 Pulsed Drain Current (2) 239 Power Dissipation(1) 2.5 Power Dissipation, TC = 25°C 53 A A W TJ, Tstg Operating Junction Temperature, Storage Temperature –55 to 150 °C EAS Avalanche Energy, single pulse ID = 28 A, L = 0.1 mH, RG = 25 Ω 39 mJ P0093-01 (1) Typical RθJA = 50°C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 3.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 10 TC = 25°C, I D = 16A TC = 125°C, I D = 16A 18 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 20 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 16A VDS = 15V 9 8 7 6 5 4 3 2 1 0 0 3 6 9 12 15 18 21 Qg - Gate Charge (nC) 24 27 30 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 6.2 6.3 6.4 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 7.2 7.3 7.4 Q3A Package Dimensions ........................................ 8 Q3A Recommended PCB Pattern ............................ 9 Q3A Recommended Stencil Pattern ......................... 9 Q3A Tape and Reel Information ............................. 10 4 Revision History Changes from Original (August 2014) to Revision A Page • Updated Power Dissipation value in Absolute Maximum Ratings table................................................................................. 1 • Added Community Resources section .................................................................................................................................. 7 • Updated Package Dimensions drawing. ................................................................................................................................ 8 • Updated PCB drawing. .......................................................................................................................................................... 9 • Updated Stencil Pattern drawing ............................................................................................................................................ 9 2 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A CSD17577Q3A www.ti.com SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-source on-resistance gfs Transconductance 30 1.1 V 1.4 1.8 V VGS = 4.5 V, ID = 10 A 5.3 6.4 mΩ VGS = 10 V, ID = 16 A 4.0 4.8 mΩ VDS = 15 V, ID = 16 A 76 S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance 1780 2310 pF 208 270 pF Crss RG Reverse transfer capacitance 79 103 pF Series gate resistance 1.4 2.8 Ω Qg Gate charge total (4.5 V) 13 17 nC Qg Gate charge total (10 V) 27 35 nC Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) Turn on delay time tr Rise time td(off) Turn off delay time tf Fall time VGS = 0 V, VDS = 15 V, ƒ = 1 MHz VDS = 15 V, ID = 16 A VDS = 15 V, VGS = 0 V VDS = 15 V, VGS = 10 V, IDS = 16 A, RG = 0 Ω 2.8 nC 5.1 nC 2.5 nC 6 nC 4 ns 31 ns 20 ns 4 ns DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time ISD = 16 A, VGS = 0 V 0.8 VDS= 15 V, IF = 16 A, di/dt = 300 A/μs 8.2 1 nC V 8.6 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) MAX UNIT RθJC Junction-to-case thermal resistance (1) THERMAL METRIC 3.0 °C/W RθJA Junction-to-ambient thermal resistance (1) (2) 55 °C/W (1) (2) MIN TYP RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A 3 CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 GATE www.ti.com GATE Source Source Max RθJA = 55°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. Max RθJA = 190°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. DRAIN DRAIN M0161-02 M0161-01 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A CSD17577Q3A www.ti.com SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 Typical MOSFET Characteristics (continued) 100 100 90 90 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) (TA = 25°C unless otherwise stated) 80 70 60 50 40 30 VGS =10V VGS =6V VGS =4.5V 20 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS - Drain-to-Source Voltage (V) 0.7 80 70 60 50 40 30 10 0 0.8 TC = 125°C TC = 25°C TC = −55°C 20 0 0.5 1 1.5 2 2.5 3 VGS - Gate-to-Source Voltage (V) G001 3.5 4 G001 VDS = 5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 10000 9 8 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 2 1 0 0 3 6 9 12 15 18 21 Qg - Gate Charge (nC) ID = 16 A 24 27 10 30 0 3 6 G001 27 30 G001 VDS = 15 V Figure 4. Gate Charge Figure 5. Capacitance 2 20 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 9 12 15 18 21 24 VDS - Drain-to-Source Voltage (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 TC = 25°C, I D = 16A TC = 125°C, I D = 16A 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A 5 CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 1.6 100 VGS = 4.5V VGS = 10V ISD − Source-to-Drain Current (A) Normalized On-State Resistance 1.8 1.4 1.2 1 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) 1 G001 ID = 16 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 100 100 10 1 0.1 0.1 10us 100us 1ms TC = 25ºC TC = 125ºC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1000 10ms DC 1 10 VDS - Drain-to-Source Voltage (V) 100 10 0.01 0.1 TAV - Time in Avalanche (mS) G001 1 G001 Single Pulse, Max RθJC = 3.0°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 40 35 30 25 20 15 10 5 0 −50 −25 0 25 50 75 100 125 TC - Case Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A CSD17577Q3A www.ti.com SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.2 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A 7 CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Q3A Package Dimensions 3.1 2.9 B A PIN 1 INDEX AREA 3.25 3.05 2X 0.15 MAX 2X (0.2) 3.5 TYP 3.1 C 0.9 MAX SEATING PLANE 0.05 0.00 (0.2) 1.74±0.1 4X 0.52 0.32 0.565±0.1 (0.15) TYP EXPOSED THERMAL PAD NOTE 3 4 5 9 2X 1.95 2.45±0.1 0.65 TYP 8 1 4X 0.55 0.25 8X 4X 1.45 2X NOTE 4 0.35 0.25 0.1 0.05 C B C A 4222499/A 12/2015 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance. 4. Metalized features are supplier options and may not be on the package. 5. All dimensions do not include mold flash or protrusions. 8 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A CSD17577Q3A www.ti.com SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 7.2 Q3A Recommended PCB Pattern (1.775) PKG 0.05 MIN ALL SIDES (0.635) TYP (0.56) 4X (0.3) 4X (0.6) 1 8 4X (0.3) (R0.05) TYP (0.975) TYP 9 SYMM (2.45) 3X (0.65) 3X (0.65) 4 5 (R0.05) TYP SOLDER MASK OPENING (0.207) METAL UNDER SOLDER MASK (0.245) ( 0.2) VIA TYP (0.905) TYP (1.55) LAND PATTERN EXAMPLE 1. This package is designed to be soldered to a thermal pad on the board. For more information, see QFN/SON PCB Attachment application report, SLUA271. 2. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown. For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. 7.3 Q3A Recommended Stencil Pattern (0.905) PKG 8X (0.6) (0.208) SOLDER MASK EDGE 1 8 8X (0.3) (0.663) SYMM 9 (1.325) 6X (0.65) 4X 1.125 5 4 (R0.05) TYP 4X 0.705 METAL TYP (3.1) 1. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A 9 CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 www.ti.com 1.75 ±0.10 7.4 Q3A Tape and Reel Information 4.00 ±0.10 (See Note 1) Ø 1.50 +0.10 –0.00 1.30 3.60 5.50 ±0.05 12.00 +0.30 –0.10 8.00 ±0.10 2.00 ±0.05 3.60 M0144-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm, unless otherwise specified. 5. Thickness: 0.30 ±0.05 mm 6. MSL1 260°C (IR and convection) PbF-reflow compatible 10 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CSD17577Q3A ACTIVE VSONP DNH 8 2500 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -55 to 150 17577 CSD17577Q3AT ACTIVE VSONP DNH 8 250 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -55 to 150 17577 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of