CSD18510Q5BT

Order Now Product Folder Support & Community Tools & Software Technical Documents CSD18510Q5B SLPS632 – MARCH 2017 CSD18510Q5B N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • • 1 Product Summary Low RDS(ON) Low-Thermal Resistance Avalanche Rated Logic Level Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package TA = 25°C 40 V Qg Gate Charge Total (10 V) 118 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC 1.2 VGS = 10 V 0.79 mΩ 1.7 V DEVICE QTY MEDIA PACKAGE SHIP CSD18510Q5B 2500 13-Inch Reel CSD18510Q5BT 250 7-Inch Reel SON 5.00-mm × 6.00-mm Plastic Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description Absolute Maximum Ratings This 40-V, 0.79-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package Limited) 100 Continuous Drain Current (Silicon Limited), TC = 25°C 300 Top View ID 8 1 D IDM Continuous Drain Current(1) 42 Pulsed Drain Current, TA = 25°C(2) 400 Power Dissipation(1) 3.1 Power Dissipation, TC = 25°C 156 A A S 2 7 D PD 6 D Operating Junction Temperature, Storage Temperature °C 3 TJ, Tstg –55 to 150 S EAS Avalanche Energy, Single Pulse ID = 81, L = 0.1 mH, RG = 25 Ω 328 mJ D G 5 4 W (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Max RθJC = 0.8°C/W, Pulse duration ≤ 100 μs, duty cycle ≤ 1%. D P0093-01 RDS(on) vs VGS Gate Charge 10 5 TC = 25° C, I D = 32 A TC = 125° C, I D = 32 A 4.5 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 21 VGS = 4.5 V Device Information(1) DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control S UNIT Drain-to-Source Voltage 2 Applications • • • TYPICAL VALUE VDS 4 3.5 3 2.5 2 1.5 1 0.5 ID = 32 A 9 VDS = 20 V 8 7 6 5 4 3 2 1 0 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 0 10 20 30 40 50 60 70 80 Qg - Gate Charge (nC) 90 100 110 120 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18510Q5B SLPS632 – MARCH 2017 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 6.2 6.3 6.4 6.5 1 1 1 2 3 7 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 6.1 Receiving Notification of Documentation Updates.... 7 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 7.2 7.3 7.4 Device and Documentation Support.................... 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... Q5B Package Dimensions ........................................ 8 Recommended PCB Pattern..................................... 9 Recommended Stencil Pattern ................................. 9 Q5B Tape and Reel Information ............................. 10 4 Revision History 2 DATE REVISION NOTES March 2017 * Initial release. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B CSD18510Q5B www.ti.com SLPS632 – MARCH 2017 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA V RDS(on) Drain-to-source on resistance gfs Transconductance 40 1.2 V 1.7 2.3 VGS = 4.5 V, ID = 32 A 1.2 1.6 VGS = 10 V, ID = 32 A 0.79 0.96 VDS = 4 V, ID = 32 A 147 mΩ S DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance 8770 11400 pF 832 1080 pF Crss RG Reverse transfer capacitance 424 551 pF Series gate resistance 0.9 1.8 Ω Qg Gate charge total (4.5 V) 58 75 nC Qg Gate charge total (10 V) 118 153 nC Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) Turnon delay time tr Rise time td(off) Turnoff delay time tf Fall time VGS = 0 V, VDS = 20 V, ƒ = 1 MHz VDS = 20 V, ID = 32 A VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 10 V, IDS = 32 A, RG = 0 Ω 21 nC 28 nC 15 nC 35 nC 8 ns 17 ns 44 ns 15 ns DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time ISD = 32 A, VGS = 0 V 0.8 VDS= 20 V, IF = 32 A, di/dt = 300 A/μs 31 1.0 nC V 19 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) MAX UNIT RθJC Junction-to-case thermal resistance (1) THERMAL METRIC 0.8 °C/W RθJA Junction-to-ambient thermal resistance (1) (2) 50 °C/W (1) (2) MIN TYP RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B 3 CSD18510Q5B SLPS632 – MARCH 2017 GATE www.ti.com GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. Source Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. DRAIN DRAIN M0137-02 M0137-01 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B CSD18510Q5B www.ti.com SLPS632 – MARCH 2017 Typical MOSFET Characteristics (continued) 200 200 175 175 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) TA = 25°C (unless otherwise stated) 150 125 100 75 50 VGS = 4.5 V VGS = 6 V VGS = 10 V 25 0 TC = 125° C TC = 25° C TC = -55° C 150 125 100 75 50 25 0 0 0.05 0.1 0.15 0.2 0.25 0.3 VDS - Drain-to-Source Voltage (V) 0.35 0.4 1 1.5 D002 2 2.5 3 3.5 VGS - Gate-to-Source Voltage (V) 4 D003 VDS = 5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 100000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 9 8 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 10000 1000 2 1 100 0 0 10 20 30 40 50 60 70 80 Qg - Gate Charge (nC) ID = 32 A 0 90 100 110 120 10 20 30 VDS - Drain-to-Source Voltage (V) D004 Figure 5. Capacitance 2.3 5 2.1 4.5 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) D005 VDS = 20 V Figure 4. Gate Charge 1.9 1.7 1.5 1.3 1.1 0.9 0.7 -75 40 TC = 25° C, I D = 32 A TC = 125° C, I D = 32 A 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TC - Case Temperature (° C) 125 150 175 0 2 D006 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) 18 20 D007 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B 5 CSD18510Q5B SLPS632 – MARCH 2017 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 100 1.8 VGS = 4.5 V VGS = 10 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 2 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 TC = 25° C TC = 125° C 10 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 TC - Case Temperature (° C) 125 150 175 0 0.2 D008 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 D009 ID = 32 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 100 IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1000 100 10 1 DC 10 ms 0.1 0.1 1 ms 100 µs 10 µs 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25qC TC = 125qC 10 0.01 0.1 TAV - Time in Avalanche (ms) D010 1 D011 Single pulse, max RθJC = 0.8°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain-to-Source Current (A) 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature (° C) 150 175 D012 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B CSD18510Q5B www.ti.com SLPS632 – MARCH 2017 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B 7 CSD18510Q5B SLPS632 – MARCH 2017 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Q5B Package Dimensions K H D3 6 D1 4 5 e 6 4 3 3 5 D2 7 2 E 2 7 • 1 8 1 8 L b (8x) c1 E1 d1 Top View d2 Bottom View Side View • Front View DIM MILLIMETERS MIN NOM MAX A 0.80 1.00 1.05 b 0.36 0.41 0.46 c 0.15 0.20 0.25 c1 0.15 0.20 0.25 c2 0.20 0.25 0.30 D1 4.90 5.00 5.10 D2 4.12 4.22 4.32 D3 3.90 4.00 4.10 d 0.20 0.25 0.30 d1 0.085 TYP d2 0.319 0.369 0.419 E 4.90 5.00 5.10 E1 5.90 6.00 6.10 E2 3.48 3.58 3.68 e H 0.36 0.46 0.56 L 0.46 0.56 0.66 L1 0.57 0.67 0.77 0° — — θ K 8 1.27 TYP 1.40 TYP Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B CSD18510Q5B www.ti.com SLPS632 – MARCH 2017 7.2 Recommended PCB Pattern For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 7.3 Recommended Stencil Pattern (0.020) 0.508 x4 (0.011) 0.286 (0.014) 0.350 (0.022) 0.562 x 4 (0.029) 0.746 x 8 2.186 (0.086) 4.318 (0.170) 0.300 (0.012) 1.270 (0.050) (0.030) 0.766 (0.051) 1.294 x8 (0.060) 1.525 1.270 (0.050) (0.042) 1.072 (0.259) 6.586 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B 9 CSD18510Q5B SLPS632 – MARCH 2017 www.ti.com K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 7.4 Q5B Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 R 0.30 TYP M0138-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm. 3. Material: black static-dissipative polystyrene. 4. All dimensions are in mm (unless otherwise specified). 5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket. 10 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD18510Q5B PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD18510Q5B ACTIVE VSON-CLIP DNK 8 2500 RoHS-Exempt & Green NIPDAU Level-1-260C-UNLIM -55 to 150 CSD18510 CSD18510Q5BT ACTIVE VSON-CLIP DNK 8 250 RoHS-Exempt & Green NIPDAU Level-1-260C-UNLIM -55 to 150 CSD18510 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of