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CSD18534KCS
SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
CSD18534KCS 60 V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
•
1
Product Summary
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package
TA = 25°C
UNIT
Drain-to-Source Voltage
60
V
Qg
Gate Charge Total (10 V)
19
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On-Resistance
VGS(th)
Threshold Voltage
3.1
nC
VGS = 4.5 V
10.2
mΩ
VGS = 10 V
7.6
mΩ
1.9
V
Ordering Information(1)
Device
Package
Media
Qty
Ship
CSD18534KCS
TO-220 Plastic
Package
Tube
50
Tube
2 Applications
•
•
•
TYPICAL VALUE
VDS
DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
3 Description
TA = 25°C
This 7.6 mΩ, 60 V TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
VALUE
UNIT
VDS
Drain-to-Source Voltage
60
V
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package limited)
100
Continuous Drain Current (Silicon limited),
TC = 25°C
73
Continuous Drain Current (Silicon limited),
TC = 100°C
52
IDM
Pulsed Drain Current (1)
164
A
PD
Power Dissipation
107
W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175
°C
EAS
Avalanche Energy, single pulse
ID = 38 A, L = 0.1 mH, RG = 25 Ω
72
mJ
Drain (Pin 2)
ID
Gate
(Pin 1)
Source (Pin 3)
A
(1) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
.
.
RDS(on) vs VGS
Gate Charge
10
TC = 25°C Id = 40A
TC = 125ºC Id = 40A
28
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (mΩ)
32
24
20
16
12
8
4
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
ID = 40A
VDS = 30V
8
6
4
2
0
0
2
4
6
8
10
12
14
Qg - Gate Charge (nC)
16
18
20
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18534KCS
SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics.......................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6
Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 9
4 Revision History
Changes from Revision A (April 2014) to Revision B
Page
•
Increased IDM to 164 A ........................................................................................................................................................... 1
•
Updated pulsed current conditions ........................................................................................................................................ 1
•
Updated Figure 1 from a normalized RθJA to a normalized RθJC curve ................................................................................. 4
•
Updated the SOA in Figure 10 ............................................................................................................................................... 6
Changes from Original (September 2012) to Revision A
Page
•
Updated document title .......................................................................................................................................................... 1
•
Updated description ............................................................................................................................................................... 1
•
Adjusted currents to reflect higher temperature capability in Absolute Maximum Ratings .................................................... 1
•
Adjusted max power to reflect higher temperature capability in Absolute Maximum Ratings................................................ 1
•
Increased maximum temperature to 175ºC in Absolute Maximum Ratings ........................................................................... 1
•
Updated Figure 6 to extend to 175ºC .................................................................................................................................... 5
•
Updated Figure 8 to extend to 175ºC .................................................................................................................................... 5
•
Updated Figure 12 to extend to 175ºC .................................................................................................................................. 6
2
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SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
5 Specifications
5.1
Electrical Characteristics
TA = 25°C unless otherwise stated
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 48 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain-to-Source On-Resistance
gƒs
Transconductance
60
1.5
V
1.9
2.3
V
VGS = 4.5 V, ID = 40 A
10.2
13.3
mΩ
VGS = 10 V, ID = 40 A
7.6
9.5
mΩ
VDS = 30 V, ID = 40 A
100
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
1500
1880
pF
164
205
pF
Crss
RG
Reverse Transfer Capacitance
5.0
6.5
pF
Series Gate Resistance
1.5
3.0
Ω
Qg
Gate Charge Total (4.5 V)
9.3
12
nC
Qg
Gate Charge Total (10 V)
19
24
nC
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
VGS = 0 V, VDS = 30 V, f = 1 MHz
VDS = 30 V, ID = 40 A
3.1
nC
4.8
nC
3.3
nC
18
nC
Turn On Delay Time
4.2
ns
tr
Rise Time
4.8
ns
td(off)
Turn Off Delay Time
10.4
ns
tƒ
Fall Time
2.4
ns
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 10 V,
IDS = 40 A, RG = 0 Ω
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
ISD = 40 A, VGS = 0 V
0.8
VDS= 30 V, IF = 40 A,
di/dt = 300 A/μs
68
1
nC
V
49
ns
5.2 Thermal Information
TA = 25°C unless otherwise stated
THERMAL METRIC
MIN
TYP
MAX
RθJC
Junction-to-Case Thermal Resistance
1.3
RθJA
Junction-to-Ambient Thermal Resistance
62
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UNIT
°C/W
3
CSD18534KCS
SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
www.ti.com
5.3 Typical MOSFET Characteristics
TA = 25°C, unless otherwise stated
Figure 1. Transient Thermal Impedance
60
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
100
80
60
40
VGS =10V
VGS =6.5V
VGS =4.5V
20
0
0
0.5
1
VDS - Drain-to-Source Voltage (V)
1.5
VDS = 5V
40
20
TC = 125°C
TC = 25°C
TC = −55°C
0
0
G001
Figure 2. Saturation Characteristics
4
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1
2
3
VGS - Gate-to-Source Voltage (V)
4
G001
Figure 3. Transfer Characteristics
Copyright © 2012–2014, Texas Instruments Incorporated
Product Folder Links: CSD18534KCS
CSD18534KCS
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SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
Typical MOSFET Characteristics (continued)
TA = 25°C, unless otherwise stated
10000
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
ID = 40A
VDS = 30V
8
C − Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
6
4
1000
100
2
0
0
2
4
6
8
10
12
14
Qg - Gate Charge (nC)
16
18
10
20
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
G001
Figure 4. Gate Charge
VGS(th) - Threshold Voltage (V)
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
−75 −50 −25
RDS(on) - On-State Resistance (mΩ)
32
ID = 250uA
Figure 6. Threshold Voltage vs Temperature
TC = 25°C Id = 40A
TC = 125ºC Id = 40A
28
24
20
16
12
8
4
0
0
25 50 75 100 125 150 175 200
TC - Case Temperature (ºC)
G001
0
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage (V)
18
20
G001
Figure 7. On-State Resistance vs Gate-to-Source Voltage
100
2.4
VGS = 4.5V
VGS = 10V
ISD − Source-to-Drain Current (A)
Normalized On-State Resistance
G001
Figure 5. Capacitance
2.5
2.2
60
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
−75 −50 −25
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
ID =40A
0
25 50 75 100 125 150 175 200
TC - Case Temperature (ºC)
G001
Figure 8. Normalized On-State Resistance vs Temperature
0.0001
0
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
1
G001
Figure 9. Typical Diode Forward Voltage
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5
CSD18534KCS
SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
www.ti.com
Typical MOSFET Characteristics (continued)
TA = 25°C, unless otherwise stated
1000
100
10us
100us
1ms
10ms
DC
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
5000
100
10
1
Single Pulse
Max RthetaJC = 1.3ºC/W
0.1
0.1
1
10
VDS - Drain-to-Source Voltage (V)
100
TC = 25ºC
TC = 125ºC
10
0.01
G001
Figure 10. Maximum Safe Operating Area
0.1
TAV - Time in Avalanche (mS)
1
G001
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain- to- Source Current (A)
120
100
80
60
40
20
0
−50 −25
0
25
50
75 100 125 150 175 200
TC - Case Temperature (ºC)
G001
Figure 12. Maximum Drain Current vs Temperature
6
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CSD18534KCS
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SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
6 Device and Documentation Support
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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7
CSD18534KCS
SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
8
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Product Folder Links: CSD18534KCS
CSD18534KCS
www.ti.com
SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014
7.1 KCS Package Dimensions
Pin Configuration
Position
Designation
Pin 1
Gate
Pin 2 / Tab
Drain
Pin 3
Source
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9
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
CSD18534KCS
ACTIVE
TO-220
KCS
3
50
RoHS-Exempt
& Green
SN
N / A for Pkg Type
-55 to 175
CSD18534KCS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
