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CSD18536KCS
SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
CSD18536KCS 60 V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
1
Product Summary
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package
TA = 25°C
TYPICAL VALUE
Drain-to-Source Voltage
60
V
Qg
Gate Charge Total (10 V)
108
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On-Resistance
VGS(th)
Threshold Voltage
14
nC
VGS = 4.5 V
1.7
mΩ
VGS = 10 V
1.3
mΩ
1.8
V
Ordering Information(1)
2 Applications
•
•
UNIT
VDS
Secondary Side Synchronous Rectifier
Motor Control
Device
Package
Media
Qty
Ship
CSD18536KCS
TO-220 Plastic Package
Tube
50
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
Absolute Maximum Ratings
This 60 V, 1.3 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
60
V
SPACE
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package limited)
200
Continuous Drain Current (Silicon limited),
TC = 25°C
349
Continuous Drain Current (Silicon limited),
TC = 100°C
247
IDM
Pulsed Drain Current (1)
400
A
PD
Power Dissipation
375
W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175
°C
EAS
Avalanche Energy, single pulse
ID = 128 A, L = 0.1 mH, RG = 25 Ω
819
mJ
Drain (Pin 2)
ID
Gate
(Pin 1)
Source (Pin 3)
A
(1) Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%.
.
RDS(on) vs VGS
Gate Charge
10
TC = 25° C, I D = 100 A
TC = 125° C, I D = 100 A
3.5
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (m:)
4
3
2.5
2
1.5
1
0.5
0
ID = 100 A
9 VDS = 30 V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
0
11
22
33
44
55
66
77
Qg - Gate Charge (nC)
88
99
110
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18536KCS
SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1
6.2
6.3
6.4
7
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 8
4 Revision History
Changes from Original (March 2015) to Revision A
Page
•
Updated Gate Charge curve .................................................................................................................................................. 1
•
Changed COSS values From: TYP = 1700 pF MAX = 2210 pF To: TYP = 1410 pF MAX = 1840 pF in Dynamic
Characteristics ....................................................................................................................................................................... 3
•
Changed Qg values From: TYP = 83 nC MAX = 108 nC To: TYP = 108 nC MAX = 140 nC in the Dynamic
Characteristics ....................................................................................................................................................................... 3
•
Changed Qg(th) value From: 12 nC To: 17 nC in the Dynamic Characteristics ...................................................................... 3
•
Changed td(on) value From: 8 ns To: 11 ns in Dynamic Characteristics. ............................................................................... 3
•
Changed tr value From: 17 ns To: 5 ns in Dynamic Characteristics. .................................................................................... 3
•
Changed td(off) value From: 23 ns To: 24 ns in Dynamic Characteristics. ............................................................................. 3
•
Changed tf value From: 12 ns To: 4 ns in Dynamic Characteristics ..................................................................................... 3
•
Updated Figure 4. .................................................................................................................................................................. 4
•
Updated Figure 5. .................................................................................................................................................................. 4
•
Added Community Resources ............................................................................................................................................... 7
2
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SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 48 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Drain-to-Source On-Resistance
gfs
Transconductance
60
1.4
V
1.8
2.2
V
VGS = 4.5 V, ID = 100 A
1.7
2.2
mΩ
VGS = 10 V, ID = 100 A
1.3
1.6
mΩ
VDS = 6 V, ID = 100 A
312
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (10 V)
108
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz
VDS = 30 V, ID = 100 A
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
8790
11430
pF
1410
1840
pF
39
51
pF
0.7
1.4
Ω
140
nC
14
nC
18
nC
17
nC
230
nC
11
ns
5
ns
24
ns
4
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 100 A, VGS = 0 V
0.9
1.0
V
Qrr
Reverse Recovery Charge
nC
Reverse Recovery Time
VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs
323
trr
86
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
RθJC
Junction-to-Case Thermal Resistance
0.4
RθJA
Junction-to-Ambient Thermal Resistance
62
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UNIT
°C/W
3
CSD18536KCS
SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
www.ti.com
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
200
200
175
175
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
Figure 1. Transient Thermal Impedance
150
125
100
75
50
VGS = 6 V
VGS = 8 V
VGS = 10 V
25
0
TC = 125° C
TC = 25° C
TC = -55° C
150
125
100
75
50
25
0
0
0.05
0.1
0.15
0.2
0.25
0.3
VDS - Drain-to-Source Voltage (V)
0.35
0.4
1
D002
1.5
2
2.5
3
3.5
VGS - Gate-to-Source Voltage (V)
4
D003
VDS = 5 V
Figure 2. Saturation Characteristics
4
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Figure 3. Transfer Characteristics
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Product Folder Links: CSD18536KCS
CSD18536KCS
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SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
100000
9
10000
8
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
7
6
5
4
3
1000
100
10
2
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
1
1
0
0
11
22
33
44
55
66
77
Qg - Gate Charge (nC)
VDS = 50 V
88
99
0
110
10
20
30
40
VDS - Drain-to-Source Voltage (V)
D004
D005
Figure 5. Capacitance
2.4
4
RDS(on) - On-State Resistance (m:)
2.2
VGS(th) - Threshold Voltage (V)
60
ID = 100 A
Figure 4. Gate Charge
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75
50
TC = 25° C, I D = 100 A
TC = 125° C, I D = 100 A
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
0
25 50 75 100 125 150 175 200
TC - Case Temperature (° C)
D006
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
ID = 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
100
2
VGS = 4.5 V
VGS = 10 V
ISD - Source-to-Drain Current (A)
Normalized On-State Resistance
2.2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75
TC = 25° C
TC = 125° C
10
1
0.1
0.01
0.001
0.0001
-50
-25
0
25 50 75 100 125 150 175 200
TC - Case Temperature (° C)
D008
0
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
1
D009
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
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CSD18536KCS
SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
500
IAV - Peak Avalanche Current (A)
IDS - Drain-to-Source Current (A)
1000
100
10
1
DC
10 ms
0.1
0.1
1 ms
100 µs
1
10
100
VDS - Drain-to-Source Voltage (V)
1000
TC = 25q C
TC = 125q C
100
10
0.01
0.1
TAV - Time in Avalanche (ms)
D010
1
D011
Single Pulse Max RθJC = 0.4°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current (A)
225
200
175
150
125
100
75
50
25
0
-50
-25
0
25
50
75 100 125
TC - Case Temperature (° C)
150
175
200
D012
Figure 12. Maximum Drain Current vs Temperature
6
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CSD18536KCS
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SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
6 Device and Documentation Support
6.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.2 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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7
CSD18536KCS
SLPS532A – MARCH 2015 – REVISED DECEMBER 2017
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 KCS Package Dimensions
Table 1. Pin Configuration
Position
8
Designation
Pin 1
Gate
Pin 2 / Tab
Drain
Pin 3
Source
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
CSD18536KCS
ACTIVE
TO-220
KCS
3
50
RoHS-Exempt
& Green
SN
N / A for Pkg Type
-55 to 175
CSD18536KCS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of