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CSD18543Q3A
SLPS633 – DECEMBER 2016
CSD18543Q3A 60-V N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
•
Product Summary
Ultra-Low Qg and Qgd
Low RDS(on)
Low-Thermal Resistance
Avalanche Rated
Lead Free
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
1
TA = 25°C
UNIT
Drain-to-Source Voltage
60
V
Qg
Gate Charge Total (10 V)
11.1
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On Resistance
VGS(th)
Threshold Voltage
1.7
nC
VGS = 4.5 V
12.0
VGS = 10 V
8.1
2.0
mΩ
V
Device Information(1)
2 Applications
•
•
•
•
•
TYPICAL VALUE
VDS
Solid State Relay Switch
DC-DC Conversion
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
DEVICE
MEDIA
QTY
PACKAGE
SHIP
CSD18543Q3A
13-Inch Reel
2500
CSD18543Q3AT
7-Inch Reel
250
SON
3.30-mm × 3.30-mm
Plastic Package
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
3 Description
VDS
Drain-to-Source Voltage
60
V
This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications.
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package Limited)
35
Continuous Drain Current (Silicon Limited),
TC = 25°C
60
ID
Top View
IDM
S
8
1
D
PD
S
2
7
D
S
3
6
D
G
5
4
D
Continuous Drain Current(1)
12
Pulsed Drain Current(2)
156
Power Dissipation(1)
2.8
Power Dissipation, TC = 25°C
66
TJ,
Tstg
Operating Junction,
Storage Temperature
EAS
Avalanche Energy, Single Pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω
D
A
A
W
–55 to 150
°C
55
mJ
(1) Typical RθJA = 45°C/W on a 1-in2, 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max RθJC = 1.9°C/W, pulse duration ≤ 100 μs, duty cycle ≤
1%.
P0093-01
.
.
RDS(on) vs VGS
Gate Charge
10
TC = 25°C, I D = 12 A
TC = 125°C, I D = 12 A
27
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (m:)
30
24
21
18
15
12
9
6
3
0
ID = 12 A
9 VDS = 30 V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
0
2
4
6
8
Qg - Gate Charge (nC)
10
12
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18543Q3A
SLPS633 – DECEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
6.2
6.3
6.4
6.5
1
1
1
2
3
7
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
6.1 Receiving Notification of Documentation Updates.... 7
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1
7.2
7.3
7.4
Device and Documentation Support.................... 7
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
Q3A Package Dimensions ........................................ 8
Q3A Recommended PCB Pattern ............................ 9
Q3A Recommended Stencil Pattern ....................... 10
Q3A Tape and Reel Information ............................. 10
4 Revision History
2
DATE
REVISION
NOTES
December 2016
*
Initial release.
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SLPS633 – DECEMBER 2016
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 48 V
60
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
2.0
2.7
V
RDS(on)
Drain-to-source
on resistance
VGS = 4.5 V, ID = 12 A
12.0
15.6
mΩ
VGS = 10 V, ID = 12 A
8.1
9.9
mΩ
gfs
Transconductance
VDS = 6 V, ID = 12 A
40
1.5
V
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
885
1150
pF
168
218
pF
Crss
RG
Reverse transfer capacitance
4.8
6.2
pF
Series gate resistance
0.5
1.0
Ω
Qg
Gate charge total (4.5 V)
5.6
7.3
Qg
Gate charge total (10 V)
11.1
14.5
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz
VDS = 30 V, ID = 12 A
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 10 V,
IDS = 12 A, RG = 0 Ω
nC
1.7
nC
3.1
nC
2.0
nC
24
nC
9
ns
18
ns
8
ns
4
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
ISD = 12 A, VGS = 0 V
0.8
VDS= 30 V, IF = 12 A,
di/dt = 300 A/μs
37
1.0
nC
V
27
ns
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
RθJC
Junction-to-case thermal resistance (1)
1.9
RθJA
Junction-to-ambient thermal resistance (1) (2)
55
(1)
(2)
UNIT
°C/W
RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
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3
CSD18543Q3A
SLPS633 – DECEMBER 2016
GATE
www.ti.com
GATE
Source
Source
Max RθJA = 55°C/W
when mounted on 1 in2
(6.45 cm2) of
2-oz (0.071-mm) thick
Cu.
Max RθJA = 160°C/W
when mounted on a
minimum pad area of
2-oz (0.071-mm) thick
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
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SLPS633 – DECEMBER 2016
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
80
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
140
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
160
120
100
80
60
40
20
0
TC = 125°C
TC = 25°C
TC = -55°C
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
3
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
D002
5
6
D003
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
10000
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
9
8
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
10
7
6
5
4
3
1000
100
10
2
1
0
1
0
2
4
6
8
Qg - Gate Charge (nC)
ID = 12 A
10
12
0
6
12
D004
60
D005
Figure 5. Capacitance
30
RDS(on) - On-State Resistance (m:)
2.6
VGS(th) - Threshold Voltage (V)
54
VDS = 30 V
Figure 4. Gate Charge
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-75
18
24
30
36
42
48
VDS - Drain-to-Source Voltage (V)
TC = 25°C, I D = 12 A
TC = 125°C, I D = 12 A
27
24
21
18
15
12
9
6
3
0
-50
-25
0
25
50
75 100
TC - Case Temperature (°C)
125
150
175
0
2
D006
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
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SLPS633 – DECEMBER 2016
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Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
100
VGS = 4.5 V
VGS = 10 V
1.8
ISD - Source-To-Drain Current (A)
Normalized On-State Resistance
2
1.6
1.4
1.2
1
0.8
0.6
TC = 25qC
TC = 125qC
10
1
0.1
0.01
0.001
0.0001
0.4
-75
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
0
175
0.2
0.4
0.6
0.8
VSD - Source-To-Drain Voltage (V)
D008
1
D009
ID = 12 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
100
IAV - Peak Avalanche Current (A)
IDS - Drain-To-Source Current (A)
1000
100
10
1
DC
10 ms
0.1
0.1
1 ms
100 µs
1
10
VDS - Drain-To-Source Voltage (V)
100
TC = 25q C
TC = 125q C
10
1
0.01
0.1
TAV - Time in Avalanche (ms)
D010
1
D011
Single pulse, max RθJC = 1.9°C/W
Figure 10. Maximum Safe Operating Area (SOA)
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current (A)
40
35
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100 125
TC - Case Temperature (°C)
150
175
D012
Max RθJC = 1.9°C/W
Figure 12. Maximum Drain Current vs Temperature
6
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SLPS633 – DECEMBER 2016
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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CSD18543Q3A
SLPS633 – DECEMBER 2016
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Q3A Package Dimensions
3.1
2.9
B
A
PIN 1 INDEX AREA
3.25
3.05
2X 0.15 MAX
2X (0.2)
3.5
TYP
3.1
C
0.9 MAX
SEATING PLANE
0.05
0.00
(0.2)
1.74±0.1
4X
0.52
0.32
0.565±0.1
(0.15) TYP
EXPOSED THERMAL PAD
NOTE 3
4
5
9
2X 1.95
2.45±0.1
0.65 TYP
8
1
4X
0.55
0.25
8X
4X 1.45
2X
NOTE 4
0.35
0.25
0.1
0.05
C B
C
A
4222499/A 12/2015
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning
and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical
performance.
4. Metalized features are supplier options and may not be on the package.
5. All dimensions do not include mold flash or protrusions.
8
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SLPS633 – DECEMBER 2016
7.2 Q3A Recommended PCB Pattern
(1.775)
PKG
0.05 MIN
ALL SIDES
(0.635)
TYP
(0.56)
4X (0.3)
4X (0.6)
1
8
4X (0.3)
(R0.05)
TYP
(0.975)
TYP
9
SYMM
(2.45)
3X (0.65)
3X (0.65)
4
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
5
(R0.05) TYP
(0.207)
(1.55)
(0.245)
(0.905)
TYP
( 0.2) VIA
TYP
LAND PATTERN EXAMPLE
1. This package is designed to be soldered to a thermal pad on the board. For more information, see QFN/SON
PCB Attachment (SLUA271).
2. Vias are optional depending on application, refer to device data sheet. If some or all are implemented,
recommended via locations are shown.
For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques
(SLPA005).
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SLPS633 – DECEMBER 2016
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7.3 Q3A Recommended Stencil Pattern
(0.905)
PKG
8X (0.6)
(0.208)
SOLDER MASK EDGE
1
8
8X (0.3)
(0.663)
SYMM
9
(1.325)
6X (0.65)
4X 1.125
5
4
(R0.05) TYP
METAL
TYP
4X 0.705
(3.1)
1. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525
may have alternate design recommendations.
1.75 ±0.10
7.4 Q3A Tape and Reel Information
4.00 ±0.10 (See Note 1)
Ø 1.50
+0.10
–0.00
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
2.00 ±0.05
3.60
M0144-01
Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm.
3. Material: black static-dissipative polystyrene.
4. All dimensions are in mm, unless otherwise specified.
5. Thickness: 0.30 ±0.05 mm.
6. MSL1 260°C (IR and convection) PbF-reflow compatible.
10
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD18543Q3A
ACTIVE
VSONP
DNH
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-55 to 150
18543
CSD18543Q3AT
ACTIVE
VSONP
DNH
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-55 to 150
18543
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
