CSD19536KCS

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents CSD19536KCS SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 118 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 17 nC VGS = 6 V 2.5 mΩ VGS = 10 V 2.3 mΩ 2.5 V Ordering Information 2 Applications • • UNIT VDS Secondary Side Synchronous Rectifier Motor Control Device Package Media Qty Ship CSD19536KCS TO-220 Plastic Package Tube 50 Tube 3 Description Absolute Maximum Ratings This 100 V, 2.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 150 Continuous Drain Current (Silicon limited), TC = 25°C 259 Continuous Drain Current (Silicon limited), TC = 100°C 183 SPACE Drain (Pin 2) ID Gate (Pin 1) (1) IDM Pulsed Drain Current PD Power Dissipation TJ, Tstg Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID = 127 A, L = 0.1 mH, RG = 25 Ω Source (Pin 3) A 400 A 375 W –55 to 175 °C 806 mJ (1) Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1% . . . RDS(on) vs VGS Gate Charge 10 TC = 25°C, I D = 100A TC = 125°C, I D = 100A 9 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 10 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 100A VDS = 50V 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 Qg - Gate Charge (nC) G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD19536KCS SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics .............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 KCS Package Dimensions........................................ 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (April 2014) to Revision B Page • Updated Pulsed Drain Current conditions ............................................................................................................................. 1 • Updated the SOA in Figure 10 ............................................................................................................................................... 6 Changes from Original (January 2014) to Revision A Page • Increased pulsed current rating to 400 A .............................................................................................................................. 1 • Updated SOA curve................................................................................................................................................................ 6 2 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS CSD19536KCS www.ti.com SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-Source On-Resistance gfs Transconductance 100 2.1 V 2.5 3.2 V VGS = 6 V, ID = 100 A 2.5 3.2 mΩ VGS = 10 V, ID = 100 A 2.3 2.7 mΩ VDS = 10 V, ID = 100 A 307 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (10 V) 118 Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0 V, VDS = 50 V, ƒ = 1 MHz VDS = 50 V, ID = 100 A VDS = 50 V, VGS = 0 V VDS = 50 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω 9250 12000 pF 1820 2370 pF 47 61 pF 1.4 2.8 Ω 153 nC 17 nC 37 nC 24 nC 335 nC 14 ns 8 ns 38 ns 5 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V Qrr Reverse Recovery Charge nC Reverse Recovery Time VDS= 50 V, IF = 100 A, di/dt = 300 A/μs 548 trr 110 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX RθJC Junction-to-Case Thermal Resistance 0.4 RθJA Junction-to-Ambient Thermal Resistance 62 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS UNIT °C/W 3 CSD19536KCS SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) 200 200 180 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 160 140 120 100 80 60 VGS =10V VGS =8V VGS =6V 40 20 0 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-to-Source Voltage (V) 0.6 VDS = 5V 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0 G001 Figure 2. Saturation Characteristics 4 Submit Documentation Feedback 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 8 G001 Figure 3. Transfer Characteristics Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS CSD19536KCS www.ti.com SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 100000 ID = 100A VDS = 50V 9 8 10000 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 10 2 1 0 0 10 20 30 1 40 50 60 70 80 90 100 110 120 Qg - Gate Charge (nC) G001 0 10 20 Figure 4. Gate Charge ID = 250uA 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.1 −75 −50 −25 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 100 G001 10 1.3 Figure 6. Threshold Voltage vs Temperature TC = 25°C, I D = 100A TC = 125°C, I D = 100A 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 Figure 7. On-State Resistance vs Gate-to-Source Voltage 100 2.4 VGS = 6V VGS = 10V ISD − Source-to-Drain Current (A) Normalized On-State Resistance 90 Figure 5. Capacitance 3.1 2.2 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 −50 −25 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 ID = 100A 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 8. Normalized On-State Resistance vs Temperature 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS 5 CSD19536KCS SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 1000 1000 10us 100us 1ms 10ms DC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 100 10 1 Single Pulse Max RthetaJC = 0.4ºC/W 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 TC = 25ºC TC = 125ºC 100 10 0.01 G001 Figure 10. Maximum Safe Operating Area 0.1 TAV - Time in Avalanche (mS) 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 175 150 125 100 75 50 25 0 −50 −25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS CSD19536KCS www.ti.com SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS 7 CSD19536KCS SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 8 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS CSD19536KCS www.ti.com SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 7.1 KCS Package Dimensions Pin Configuration Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD19536KCS 9 PACKAGE OPTION ADDENDUM www.ti.com 24-Mar-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) CSD19536KCS ACTIVE TO-220 KCS 3 50 RoHS-Exempt & Green SN N / A for Pkg Type -55 to 175 CSD19536KCS (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of