CSD22206WT

Order Now Product Folder Support & Community Tools & Software Technical Documents CSD22206W SLPS689 – MAY 2017 CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Resistance Small Footprint 1.5 mm × 1.5 mm Lead Free Gate ESD Protection RoHS Compliant Halogen Free Gate-Source Voltage Clamp TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage Load Switch Applications Battery Management Battery Protection S S QTY CSD22206W 3000 nC 6.8 VGS = –4.5 V 4.7 mΩ –0.7 V MEDIA PACKAGE SHIP 7-Inch Reel 1.50-mm × 1.50-mm Wafer BGA Package Tape and Reel 250 VALUE UNIT VDS Drain-to-Source Voltage –8 V VGS Gate-to-Source Voltage –6 V Continuous Drain Current(1) –5 A ID Pulsed Drain Current(2) PD Power Dissipation TJ, Tstg Operating Junction, Storage Temperature –108 A 1.7 W –55 to 150 °C (1) Device operating at a temperature of 105°C. (2) Typ RθJA = 75°C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width ≤ 100 μs, duty cycle ≤ 1%. Source S 1.8 Absolute Maximum Ratings Top View and Circuit Configuration S nC VGS = –2.5 V TA = 25°C This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. S DEVICE CSD22206WT 3 Description G V 11.2 Device Information 2 Applications • • • UNIT –8 Gate D D D Drain RDS(on) vs VGS Gate Charge 4.5 TC = 25°C, I D = -2 A TC = 125°C, I D = -2 A 25 -VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 30 20 15 10 5 0 ID = -2 A 4 VDS = -4 V 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 -VGS - Gate-to-Source Voltage (V) 5 6 D007 0 2 4 6 8 Qg - Gate Charge (nC) 10 12 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD22206W SLPS689 – MAY 2017 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 6.1 6.2 6.3 6.4 6.5 1 1 1 2 3 7 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Receiving Notification of Documentation Updates.... Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 CSD22206W Package Dimensions .......................... 8 7.2 Recommended Land Pattern .................................... 9 Device and Documentation Support.................... 7 4 Revision History 2 DATE REVISION NOTES May 2017 * Initial release. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W CSD22206W www.ti.com SLPS689 – MAY 2017 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = –250 μA –8 BVGSS Gate-to-source voltage VDS = 0 V, IG = –250 μA –6 IDSS Drain-to-source leakage current VGS = 0 V, VDS = –6.4 V IGSS Gate-to-source leakage current VDS = 0 V, VGS = –6 V VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = –250 μA RDS(on) Drain-to-source on resistance gfs Transconductance V V –1 μA –100 nA –0.7 –1.05 V VGS = –2.5 V, IDS = –2 A 6.8 9.1 VGS = –4.5 V, IDS = –2 A 4.7 5.7 VDS = –0.8 V, IDS = –2 A 20 –0.4 mΩ S DYNAMIC CHARACTERISTICS CISS Input capacitance VGS = 0 V, VDS = –4 V, ƒ = 1 MHz 1750 2275 pF 960 1250 pF 340 440 pF COSS Output capacitance CRSS Reverse transfer capacitance RG Series gate resistance Qg Gate charge total (–4.5 V) 11.2 Qgd Gate charge gate-to-drain 1.8 nC Qgs Gate charge gate-to-source 2.1 nC Qg(th) Gate charge at Vth 1.3 nC QOSS Output charge 7.2 nC td(on) Turnon delay time 37 ns tr Rise time 17 ns td(off) Turnoff delay time 118 ns tf Fall time 45 ns 30 VDS = –4 V, ID = –2 A VDS = –4 V, VGS = 0 V VDS = –4 V, VGS = –4.5 V, IDS = –2 A, RG = 0 Ω Ω 14.6 nC DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time IDS = –2 A, VGS = 0 V –0.69 VDS= –4 V, IF = –1 A, di/dt = 200 A/μs 24 –1.0 nC 59 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC RθJA (1) (2) TYPICAL VALUES Junction-to-ambient thermal resistance (1) 75 Junction-to-ambient thermal resistance (2) 230 UNIT °C/W Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W 3 CSD22206W SLPS689 – MAY 2017 www.ti.com Typ RθJA = 230°C/W when mounted on minimum pad area of 2-oz Cu. Typ RθJA = 75°C/W when mounted on 1 in2 of 2-oz Cu. M0149-01 M0150-01 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W CSD22206W www.ti.com SLPS689 – MAY 2017 Typical MOSFET Characteristics (continued) 45 50 40 45 -IDS - Drain-to-Source Current (A) -IDS - Drain-to-Source Current (A) TA = 25°C (unless otherwise stated) 35 30 25 20 15 10 VGS = -2.5 V VGS = -4.5 V 5 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 -VDS - Drain-to-Source Voltage (V) D002 TC = 125°C TC = 25°C TC = -55°C 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 -VGS - Gate-to-Source Voltage (V) 3 D003 VDS = –4 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 10000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 4 3.5 C - Capacitance (pF) -VGS - Gate-to-Source Voltage (V) 4.5 3 2.5 2 1.5 1000 1 0.5 100 0 0 2 4 6 8 Qg - Gate Charge (nC) ID = –2 A 10 0 12 1 D004 8 D005 Figure 5. Capacitance 30 RDS(on) - On-State Resistance (m:) 1 -VGS(th) - Threshold Voltage (V) 7 VDS = –4 V Figure 4. Gate Charge 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -75 2 3 4 5 6 -VDS -Drain-to-Source Voltage (V) TC = 25°C, I D = -2 A TC = 125°C, I D = -2 A 25 20 15 10 5 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 175 0 D006 1 2 3 4 -VGS - Gate-to-Source Voltage (V) 5 6 D007 ID = –250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W 5 CSD22206W SLPS689 – MAY 2017 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 10 1.4 TC = -55qC TC = -40qC TC = 25qC TC = 125qC TC = 150qC -ISD - Source-to-Drain Current (A) Normalized On-State Resistance VGS = -4.5 V 1.3 1.2 1.1 1 0.9 0.8 0.7 -75 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 125 TA - Ambient Temperature (qC) 150 0 175 0.2 0.4 0.6 0.8 -VSD - Source-to-Drain Voltage (V) D008 1 D009 ID = –2 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 6 100 -IDS - Drain-to-Source Current (A) -IDS - Drain-to-Source Current (A) 200 10 1 100 ms 10 ms 0.1 0.1 1 ms 1 -VDS - Drain-to-Source Voltage (V) 10 20 5 4 3 2 1 0 -50 -25 D010 0 25 50 75 100 125 TA - Ambient Temperature (° C) 150 175 D011 Single pulse, max RθJA = 75°C/W Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W CSD22206W www.ti.com SLPS689 – MAY 2017 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W 7 CSD22206W SLPS689 – MAY 2017 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD22206W Package Dimensions Solder Ball Ø 0.31 ±0.075 Pin 1 Mark 1 2 3 2 3 1 A B 1.50 B 1.00 +0.00 –0.08 0.50 A C C 1.50 +0.00 –0.08 0.62 Max Top View 0.50 Bottom View 0.04 0.62 Max 0.35 ±0.10 Side View Seating Plate Front View M0171-01 NOTE: All dimensions are in mm (unless otherwise specified). Table 1. Pinout POSITION 8 DESIGNATION A1 Gate A2, A3, B1, B2, B3 Source C1, C2, C3 Drain Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W CSD22206W www.ti.com SLPS689 – MAY 2017 7.2 Recommended Land Pattern Ø 0.25 1 2 3 1.00 0.50 A B C 0.50 M0172-01 NOTE: All dimensions are in mm (unless otherwise specified). Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: CSD22206W 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD22206W ACTIVE DSBGA YZF 9 3000 RoHS & Green SAC396 | SNAGCU Level-1-260C-UNLIM -55 to 150 22206 CSD22206WT ACTIVE DSBGA YZF 9 250 RoHS & Green SAC396 | SNAGCU Level-1-260C-UNLIM -55 to 150 22206 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of