CSD23201W10

CSD23201W10 www.ti.com SLPS209A – AUGUST 2009 – REVISED MAY 2010 P-Channel NexFET™ Power MOSFET Check for Samples: CSD23201W10 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint 1mm × 1mm Low Profile 0.62mm Height Pb Free Gate ESD Protection – 3kV RoHS Compliant Halogen Free VDS Drain to Source Voltage –12 V Qg Gate Charge Total (4.5V) 1.8 nC Qgd Gate Charge Gate to Drain RDS(on) VGS(th) Drain to Source On Resistance nC 110 mΩ VGS = –2.5V 77 mΩ VGS = –4.5V 66 mΩ Threshold Voltage –0.6 V ORDERING INFORMATION APPLICATIONS • • • 0.26 VGS = –1.5V Battery Management Load Switch Battery Protection Device Package CSD23201W10 1 × 1 Wafer Level Package Media 7-inch reel Qty Ship 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. D D UNIT –12 V –6 V –2.2 A Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) –8.8 A Continuous Gate Clamp Current –0.5 A IG Top View VALUE VDS Pulsed Gate Clamp Current –7 A PD Power Dissipation(1) 1 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C (1) RqJA = 100°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300ms, duty cycle ≤2% G S P0097-01 RDS(ON) vs VGS Gate Charge 4.5 ID = −0.5A 180 4.0 160 −VG − Gate Voltage − V RDS(on) − On-State Resistance − mΩ 200 140 TC = 125°C 120 100 80 60 40 TC = 25°C ID = −0.5A VDS = −6V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 20 0 0 1 2 3 4 −VGS − Gate to Source Voltage − V 5 6 G006 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Qg − Gate Charge − nC G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD23201W10 SLPS209A – AUGUST 2009 – REVISED MAY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = –250mA –12 BVGSS Gate to Source Voltage; VDS = 0V, IG = –250mA –6.1 IDSS Drain to Source Leakage Current VGS = 0V, VDS = –9.6V IGSS Gate to Source Leakage Current VDS = 0V, VGS = –6V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = –250mA RDS(on) gfs Drain to Source On Resistance Transconductance –0.4 V –7.2 V –1 mA –100 nA –0.6 –1.0 V VGS = –1.5V, ID = –0.5A 110 138 mΩ VGS = –2.5V, ID = –0.5A 77 96 mΩ VGS = –4.5V, ID = –0.5A 66 82 mΩ VDS = –6.0V, ID = –0.5A 9 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 250 325 pF 125 155 CRSS Reverse Transfer Capacitance pF 32 42 pF Qg Qgd Gate Charge Total (–4.5V) 1.8 2.4 nC Gate Charge Gate to Drain 0.26 Qgs Gate Charge Gate to Source nC 0.28 nC Qg(th) Gate Charge at Vth QOSS Output Charge 0.11 nC 1.7 td(on) Turn On Delay Time nC 24 ns tr Rise Time td(off) Turn Off Delay Time 19 ns 68 tf Fall Time ns 29 ns VGS = 0V, VDS = –6.0V, f = 1MHz VDS = –6.0V, ID = –0.5A VDS = –6.0V, VGS = 0V VDS = –6.0V, VGS = –2.5V, ID = –0.5A RG = 20Ω Diode Characteristics VSD Diode Forward Voltage IS = –0.5A, VGS = 0V Qrr Reverse Recovery Charge Vdd= –4.0V, IF = –0.5A, di/dt = 100A/ms –0.77 2 –1.0 nC V trr Reverse Recovery Time Vdd= –4.0V, IF = –0.5A, di/dt = 100A/ms 9.5 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJC R qJA 2 Thermal Resistance Junction to Ambient (Minimum Cu area) 2 Thermal Resistance Junction to Ambient (1 in Cu area) Submit Documentation Feedback MIN TYP MAX UNIT 245 °C/W 125 °C/W Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 CSD23201W10 www.ti.com SLPS209A – AUGUST 2009 – REVISED MAY 2010 P-Chan 1.0x1.0 CSP TTA MAX Rev1 P-Chan 1.0x1.0 CSP TTA MIN Rev1 Max RqJA = 245°C/W when mounted on minimum pad area of 2 oz. Cu. Max RqJA = 125°C/W when mounted on 1inch2 of 2 oz. Cu. M0149-01 M0150-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – NormalizedThermal Impedance 10 1 0.5 0.3 0.1 0.01 0.1 0.05 Duty Cycle = t1/t2 0.02 0.01 P t1 t2 0.001 0.0001 0.00001 RqJA = 195°C/W (min Cu) TJ = P x ZqJA x RqJA Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 tp – Pulse Duration–s 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 3 CSD23201W10 SLPS209A – AUGUST 2009 – REVISED MAY 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 5 5 VGS = −1.5V VGS = −4.5V −ID − Drain Current − A −ID − Drain Current − A VDS = −5V 4 3 VGS = −3V 2 VGS = −2.5V VGS = −1.2V 1 4 TC = 125°C 3 2 TC = 25°C 1 TC = −55°C 0 0.0 0.3 0.6 0.9 1.2 0 0.50 1.5 −VDS − Drain to Source Voltage − V 0.75 G001 Figure 2. Saturation Characteristics 1.50 1.75 2.00 G002 300 ID = −0.5A VDS = −6V f = 1MHz, VGS = 0V 250 3.5 C − Capacitance − pF −VG − Gate Voltage − V 1.25 Figure 3. Transfer Characteristics 4.5 4.0 1.00 −VGS − Gate to Source Voltage − V 3.0 2.5 2.0 1.5 1.0 COSS = CDS + CGD 200 CISS = CGD + CGS 150 100 CRSS = CGD 50 0.5 0.0 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 2.00 Qg − Gate Charge − nC 2 10 12 G004 200 RDS(on) − On-State Resistance − mΩ −VGS(th) − Threshold Voltage − V 8 Figure 5. Capacitance 1.0 ID = −250µA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ID = −0.5A 180 160 140 TC = 125°C 120 100 80 60 40 TC = 25°C 20 0 −25 25 75 125 175 TC − Case Temperature − °C 0 1 2 3 4 5 −VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 4 6 −VDS − Drain to Source Voltage − V G003 Figure 4. Gate Charge 0.0 −75 4 6 G006 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 CSD23201W10 www.ti.com SLPS209A – AUGUST 2009 – REVISED MAY 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 10 1.4 ID = −0.5A VGS = −4.5V −ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 1 TC = 125°C 0.1 TC = 25°C 0.01 0.001 0.0001 −25 25 75 125 TC − Case Temperature − °C 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 −VSD − Source to Drain Voltage − V G007 Figure 8. On Resistance vs. Temperature G008 Figure 9. Typical Diode Forward Voltage 3.0 100 −ID − Drain Current − A −ID − Drain Current − A 2.5 10 100ms 1 100ms 0.1 Area Limited by RDS(on) 10ms 1s DC Single Pulse RθJA = 195°C/W (min Cu) 0.01 0.1 1 10 Figure 10. Maximum Safe Operating Area 1.5 1.0 0.5 100 −VDS − Drain To Source Voltage − V 2.0 0.0 −50 −25 0 25 50 75 100 125 150 175 TC − Case Temperature − °C G009 G011 Figure 11. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 5 CSD23201W10 SLPS209A – AUGUST 2009 – REVISED MAY 2010 www.ti.com MECHANICAL DATA CSD23201W10 Package Dimensions Pin 1 Mark 1 Solder Ball Ø 0.31 ±0.075 2 2 1 A 1.00 0.50 +0.00 –0.10 A B B 1.00 +0.00 –0.10 0.50 Side View Bottom View 0.04 0.62 Max 0.38 Top View 0.62 Max Seating Plate Front View M0151-01 NOTE: All dimensions are in mm (unless otherwise specified) Pin Configuration Table 6 POSITION DESIGNATION B1 Source A1 Gate A2, B2 Drain Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 CSD23201W10 www.ti.com SLPS209A – AUGUST 2009 – REVISED MAY 2010 Land Pattern Recommendation Ø 0.25 1 2 0.50 A B 0.50 M0152-01 NOTE: All dimensions are in mm (unless otherwise specified) Tape and Reel Information 4.00 ±0.10 2.00 ±0.05 4.00 ±0.10 Ø 0.50 ±0.05 0.78 ±0.05 1.18 ±0.05 5° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 Ø 1.50 ±0.10 0.254 ±0.02 1.18 ±0.05 5° Max M0153-01 NOTE: All dimensions are in mm (unless otherwise specified) REVISION HISTORY Changes from Original (August 2009) to Revision A • Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD23201W10 7 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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