CSD23203W

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 CSD23203W –8-V P-Channel NexFET™ Power MOSFET 1 Features • • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Low RDS(on) Small Footprint Low Profile 0.62-mm Height Lead Free RoHS Compliant Halogen Free CSP 1-mm × 1.5-mm Wafer Level Package TA = 25°C –8 V Qg Gate Charge Total (–4.5 V) 4.9 nC Qgd Gate Charge Gate-to-Drain 0.6 nC VGS = –1.8 V RDS(on) VGS(th) Drain-to-Source On-Resistance 35 mΩ VGS = –2.5 V 22 mΩ VGS = –4.5 V 16.2 mΩ Voltage Threshold –0.8 V Device Information(1) Battery Management Load Switch Battery Protection DEVICE QTY MEDIA CSD23203W 3000 7-Inch Reel CSD23203WT 250 7-Inch Reel PACKAGE SHIP 1.00-mm × 1.50-mm Wafer Level Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D UNIT Drain-to-Source Voltage 2 Applications • • • TYPICAL VALUE VDS S G Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage –8 V VGS Gate-to-Source Voltage –6 V ID Continuous Drain Current(1) –3 A IDM Pulsed Drain Current(2) –54 A PD Power Dissipation 0.75 W TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Device operating at a temperature of 105ºC. (2) Typ RθJA = 170°C/W, pulse width ≤ 100 μs, duty cycle ≤ 1%. D S S RDS(on) vs VGS Gate Charge 5 TC = 25° C, I D = -1.5 A TC = 125° C, I D = -1.5 A 50 -VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 60 40 30 20 10 0 ID = -1.5 A VDS = -4 V 4 3 2 1 0 0 1 2 3 4 -VGS - Gate-To-Source Voltage (V) 5 6 D007 0 1 2 3 4 Qg - Gate Charge (nC) 5 6 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 6.2 6.3 6.4 6.5 7 Receiving Notification of Documentation Updates.... Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 CSD23203W Package Dimensions .......................... 8 7.2 Land Pattern Recommendation ................................ 9 7.3 Tape and Reel Information ....................................... 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (December 2014) to Revision A Page • Corrected MOSFET body tie in Top View image. .................................................................................................................. 1 • Added Receiving Notification of Documentation Updates and Community Resources sections ........................................... 7 2 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W CSD23203W www.ti.com SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = –250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = –6.4 V IGSS Gate-to-source leakage current VDS = 0 V, VGS = –6 V VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = –250 μA RDS(on) Drain-to-source on-resistance gƒs Transconductance –8 -0.6 V –1 μA –100 nA –0.8 –1.1 VGS = –1.8 V, ID = –1.5 A 35 53 mΩ V VGS = –2.5 V, ID = –1.5 A 22 26.5 mΩ VGS = –4.5 V, ID = –1.5 A 16.2 19.4 mΩ VDS = –0.8 V, ID = –1.5 A 14 S DYNAMIC CHARACTERISTICS CISS Input capacitance COSS Output capacitance CRSS Reverse transfer capacitance Qg Gate charge total (–4.5 V) Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth QOSS Output charge td(on) Turnon delay time tr Rise time td(off) Turnoff delay time tƒ Fall time VGS = 0 V, VDS = –4 V, ƒ = 1 MHz VDS = –4 V, ID = –1.5 A VDS = –4 V, VGS = 0 V VDS = –4 V, VGS = –4.5 V, ID = –1.5 A RG = 10 Ω 703 914 pF 391 508 pF 133 172 pF 4.9 6.3 nC 0.6 nC 1.3 nC 0.6 nC 1.9 nC 14 ns 12 ns 58 ns 27 ns DIODE CHARACTERISTICS VSD Diode forward voltage IS = –1.5 A, VGS = 0 V Qrr Reverse recovery charge trr Reverse recovery time VDS= –4.7 V, IF = –1.5 A di/dt = 100 A/μs –0.75 –1 V 6.1 nC 21 ns 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-ambient thermal resistance (1) 170 Junction-to-ambient thermal resistance (2) 55 MAX UNIT °C/W Device mounted on FR4 material with minimum Cu mounting area. Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W 3 CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 www.ti.com P-Chan 1.0x1.5 CSP TTA MAX Rev1 P-Chan 1.0x1.5 CSP TTA MIN Rev1 Typ RθJA = 170°C/W when mounted on minimum pad area of 2-oz Cu. Typ RθJA = 55°C/W when mounted on 1 in2 of 2-oz Cu. M0155-01 M0156-01 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance SPACE 4 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W CSD23203W www.ti.com SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 10 9 -IDS - Drain-To-Source Current (A) -IDS - Drain-to-Source Current (A) 10 8 7 6 5 4 3 2 VGS = -1.8 V VGS = -2.5 V VGS = -4.5 V 1 0 TC = 125° C TC = 25° C TC = -55° C 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 -VDS - Drain-to-Source Voltage (V) 0.6 0.7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VGS - Gate-To-Source Voltage (V) D002 1.8 2 D003 VDS = –5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 1000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 900 800 4 C - Capacitance (pF) -VGS - Gate-to-Source Voltage (V) 5 3 2 700 600 500 400 300 200 1 100 0 0 0 1 2 3 4 Qg - Gate Charge (nC) ID = –1.5 A 5 0 6 1 2 3 4 5 6 -VDS - Drain-to-Source Voltage (V) D004 D005 Figure 5. Capacitance 60 RDS(on) - On-State Resistance (m:) 1.1 -VGS(th) - Threshold Voltage (V) 8 VDS = –4 V Figure 4. Gate Charge 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -75 7 TC = 25° C, I D = -1.5 A TC = 125° C, I D = -1.5 A 50 40 30 20 10 0 -50 -25 0 25 50 75 100 TC - Case Temperature (qC) 125 150 175 0 D006 1 2 3 4 -VGS - Gate-To-Source Voltage (V) 5 6 D007 ID = –250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W 5 CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 10 1.3 VGS = -2.5 V VGS = -4.5 V 1.2 1.1 1 0.9 0.8 0.7 -75 TC = 25qC TC = 125qC -ISD - Source-To-Drain Current (A) Normalized On-State Resistance 1.4 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 TC - Case Temperature (qC) 125 150 0 175 0.2 0.4 0.6 0.8 -VSD - Source-To-Drain Voltage (V) D008 1 D009 ID = –1.5 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 3.5 -IDS - Drain-to-Source Current (A) -IDS - Drain-To-Source Current (A) 100 10 1 100 ms 10 ms 0.1 0.1 1 ms 1 -VDS - Drain-To-Source Voltage (V) 10 3 2.5 2 1.5 1 0.5 0 -50 -25 D010 0 25 50 75 100 125 TC - Case Temperature (qC) 150 175 200 D011 Single Pulse, Typical RθJA = 170°C/W Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W CSD23203W www.ti.com SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W 7 CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD23203W Package Dimensions NOTE: All dimensions are in mm (unless otherwise specified). Table 1. Pinout 8 POSITION DESIGNATION C1, C2 Drain A1 Gate A2, B1, B2 Source Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W CSD23203W www.ti.com SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 7.2 Land Pattern Recommendation Ø 0.25 2 1 1.00 0.50 A B C 0.50 M0158-01 NOTE: All dimensions are in mm (unless otherwise specified). Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD23203W 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD23203W ACTIVE DSBGA YZC 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM CSD23203WT ACTIVE DSBGA YZC 6 250 RoHS & Green SNAGCU Level-1-260C-UNLIM 23203 -55 to 150 23203 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of