CSD25301W1015
www.ti.com
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25301W1015
FEATURES
1
•
•
•
•
•
•
•
PRODUCT SUMMARY
Ultra Low Qg and Qgd
Small Footprint
Low Profile 0.62mm Height
Pb Free
RoHS Compliant
Halogen Free
CSP 1 × 1.5 mm Wafer Level Package
VDS
Drain to Source Voltage
–20
V
Qg
Gate Charge Total (4.5V)
1.9
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
VGS(th)
nC
175
mΩ
VGS = –2.5V
80
mΩ
VGS = –4.5V
62
mΩ
Voltage Threshold
–0.75
V
ORDERING INFORMATION
APPLICATIONS
•
•
•
0.4
VGS = –1.5V
Battery Management
Load Switch
Battery Protection
Device
Package
CSD25301W1015
1 × 1.5 Wafer
Level Package
Media
7-inch reel
Qty
Ship
3000
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
TA = 25°C unless otherwise stated
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View
D
D
S
S
S
G
VALUE
UNIT
VDS
Drain to Source Voltage
–20
V
VGS
Gate to Source Voltage
±8
V
ID
Continuous Drain Current, TC = 25°C(1)
–2.2
A
IDM
Pulsed Drain Current, TA = 25°C(2)
–8.8
A
PD
Power Dissipation(1)
1.5
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
(1) RqJA = 85°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%
P0099-01
RDS(ON) vs VGS
Gate Charge
6
ID = −1A
250
5
−VG − Gate Voltage − V
RDS(on) − On-State Resistance − mΩ
300
200
TC = 125°C
150
100
50
ID = −1A
VDS = −10V
4
3
2
1
TC = 25°C
0
0
1
2
3
4
−VGS − Gate to Source Voltage − V
5
6
G006
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Qg − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
CSD25301W1015
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = –250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = –16V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = ±8V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = –250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
–20
–0.4
V
–1
mA
–100
nA
–0.75
–1
V
VGS = –1.5V, ID = –1A
175
220
mΩ
VGS = –2.5V, ID = –1A
80
100
mΩ
VGS = –4.5V, ID = –1A
62
75
mΩ
VDS = –10V, ID = –1A
5.8
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg
Gate Charge Total (–4.5V)
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = –10V, f = 1MHz
VDS = –10V, ID = –1A
VDS = –9.8V, VGS = 0V
VDS = –10V, VGS = –4.5V, ID = –1A
RG = 20Ω
210
270
pF
90
120
pF
30
40
pF
1.9
2.5
nC
0.4
nC
0.35
nC
0.17
nC
1.7
nC
4
ns
2
ns
29
ns
12
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = –1A, VGS = 0V
–0.75
–1
V
Qrr
Reverse Recovery Charge
Vdd= –9.8V, IF = –1A, di/dt = 200A/ms
0.9
nC
trr
Reverse Recovery Time
Vdd= –9.8V, IF = –1A, di/dt = 200A/ms
8.2
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJA
2
MAX
UNIT
Thermal Resistance Junction to Ambient (Minimum Cu area)
270
°C/W
Thermal Resistance Junction to Ambient (1 in2 Cu area)
105
°C/W
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MIN
TYP
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
CSD25301W1015
www.ti.com
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
P-Chan 1.0x1.5 CSP TTA MAX Rev1
P-Chan 1.0x1.5 CSP TTA MIN Rev1
Max RqJA = 270°C/W
when mounted on
minimum pad area of 2
oz. Cu.
Max RqJA = 105°C/W
when mounted on 1
inch2 of 2 oz. Cu.
M0155-01
M0156-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – NormalizedThermal Impedance
10
1
0.5
0.3
0.1
0.01
0.1
0.05
Duty Cycle = t1/t2
0.02
0.01
P
t1
t2
0.001
0.0001
0.00001
RqJA = 216°C/W (min Cu)
TJ = P x ZqJA x RqJA
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1k
tp – Pulse Duration–s
G012
Figure 1. Transient Thermal Impedance
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
3
CSD25301W1015
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
5
10
VDS = −5V
VGS = −2V
8
VGS = −4.5V
−ID − Drain Current − A
−ID − Drain Current − A
9
7
6
5
VGS = −3V
4
VGS = −1.5V
VGS = −2.5V
3
2
4
3
TC = 125°C
2
TC = 25°C
1
TC = −55°C
1
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.75
3.0
−VDS − Drain to Source Voltage − V
C − Capacitance − pF
−VG − Gate Voltage − V
2.00
G002
f = 1MHz
VGS = 0V
250
4
3
2
200
COSS = CDS + CGD
CISS = CGD + CGS
150
100
CRSS = CGD
50
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
Qg − Gate Charge − nC
0
0
5
10
15
20
−VDS − Drain to Source Voltage − V
G003
Figure 4. Gate Charge
G004
Figure 5. Capacitance
1.0
300
RDS(on) − On-State Resistance − mΩ
−VGS(th) − Threshold Voltage − V
1.75
300
ID = −1A
VDS = −10V
1
ID = −250µA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
ID = −1A
250
200
TC = 125°C
150
100
50
TC = 25°C
0
−25
25
75
125
175
TC − Case Temperature − °C
0
1
2
3
4
5
−VGS − Gate to Source Voltage − V
G005
Figure 6. Threshold Voltage vs. Temperature
4
1.50
Figure 3. Transfer Characteristics
6
0.0
−75
1.25
−VGS − Gate to Source Voltage − V
G001
Figure 2. Saturation Characteristics
5
1.00
6
G006
Figure 7. On Resistance vs. Gate Voltage
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
CSD25301W1015
www.ti.com
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
10
1.4
ID = −1A
VGS = −4.5V
−ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
1
TC = 125°C
0.1
TC = 25°C
0.01
0.001
0.0001
−25
25
75
125
TC − Case Temperature − °C
175
0.0
0.8
1.0
1.2
G008
2.5
−ID − Drain Current − A
−ID − Drain Current − A
0.6
Figure 9. Typical Diode Forward Voltage
100
10
1ms
1
10ms
0.01
0.1
0.4
−VSD − Source to Drain Voltage − V
G007
Figure 8. On Resistance vs. Temperature
0.1
0.2
Area Limited
by RDS(on)
100ms
Single Pulse
RθJA = 216°C/W (min Cu)
1
2.0
1.5
1.0
0.5
DC
10
100
−VDS − Drain To Source Voltage − V
Figure 10. Maximum Safe Operating Area
0.0
−50
−25
0
25
50
75
100
125
150
175
TC − Case Temperature − °C
G009
G011
Figure 11. Maximum Drain Current vs. Temperature
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
5
CSD25301W1015
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
MECHANICAL DATA
CSD25301W1015 Package Dimensions
Pin 1
Mark
1
Solder Ball
Ø 0.31 ±0.075
2
1
A
B
1.50
B
1.00
+0.00
–0.10
0.50
A
2
Pin 1
Mark
C
C
1.00
+0.00
–0.10
0.50
Side View
Bottom View
0.04
0.62 Max
0.38
Top View
0.62 Max
Seating Plate
Front View
M0157-01
NOTE: All dimensions are in mm (unless otherwise specified)
Pinout
6
POSITION
DESIGNATION
C1, C2
Drain
A1
Gate
A2, B1, B2
Source
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
CSD25301W1015
www.ti.com
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
Land Pattern Recommendation
Ø 0.25
1
2
1.00
0.50
A
B
C
0.50
M0158-01
NOTE: All dimensions are in mm (unless otherwise specified)
Tape and Reel Information
4.00 ±0.10
Ø 1.50 ±0.10
4.00 ±0.10
Ø 0.60
0.86 ±0.05
+0.05
–0.10
1.65 ±0.05
2° Max
3.50 ±0.05
8.00
+0.30
–0.10
1.75 ±0.10
2.00 ±0.05
0.254 ±0.02
1.19 ±0.05
2° Max
M0159-01
NOTE: All dimensions are in mm (unless otherwise specified)
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
7
CSD25301W1015
SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
REVISION HISTORY
Changes from Original (August 2009) to Revision A
•
Replaced incorrect label: RqJC with RqJA in the THERMAL CHARACTERISTICS table. ...................................................... 2
Changes from Revision A (August 2010) to Revision B
•
8
Page
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25301W1015
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
CSD25301W1015
Package Package Pins
Type Drawing
SPQ
DSBGA
3000
YZC
6
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
180.0
8.4
Pack Materials-Page 1
1.09
B0
(mm)
K0
(mm)
P1
(mm)
1.56
0.65
4.0
W
Pin1
(mm) Quadrant
8.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Sep-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD25301W1015
DSBGA
YZC
6
3000
182.0
182.0
17.0
Pack Materials-Page 2
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