CSD75204W15

CSD75204W15 www.ti.com SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 Dual P-Channel NexFET™ Power MOSFET Check for Samples: CSD75204W15 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm × 1.5-mm Gate-Source Voltage Clamp Gate ESD Protection –3kV Pb Free RoHS Compliant Halogen Free VD1D2 Drain to Drain Voltage –20 V Qg Gate Charge Total (-4.5V) 2.8 nC Qgd Gate Charge Gate to Drain RD1D2(on) Drain to Drain On Resistance VGS(th) nC 140 mΩ VGS = –2.5V 105 mΩ VGS = –4.5V 80 mΩ Threshold Voltage –0.7 V ORDERING INFORMATION Device Package Media CSD75204W15 1.5-mm × 1.5-mm Wafer Level Package 7-Inch Reel APPLICATIONS • • 0.6 VGS = –1.8V Battery Management Battery Protection Qty Ship 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. VGS ID1D2 IS Top View IG G1 D1 D2 D1 G2 D2 D2 UNIT –20 V Gate to Source Voltage -6 V Continuous Drain to Drain Current, TC = 25°C(1) –3 A Pulsed Drain to Drain Current, TC = 25°C(2) -28 A Continuous Source Pin Current -1.2 A Pulsed Source Pin Current(2) -15 A Continuous Gate Clamp Current -0.5 A (2) Pulsed Gate Clamp Current -7 A PD Power Dissipation(1) 0.7 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C D1 SS VALUE VD1D2 Drain to Drain Voltage (1) Per device, both sides in conduction (2) Pulse duration 10ms, duty cycle ≤2% P0109-01 Gate Charge (Per MOSFET) 300 6 ID1D2 = −1A −VGS − Gate to Source Voltage − V RD1D2(on) − On-State Resistance − mΩ RD1D2(on) vs VGS 250 200 TJ = 125°C TJ = 25°C 150 100 50 0 0 1 2 3 4 −VGS − Gate to Source Voltage − V 5 6 G006 5 ID1D2 = −1A VD1D2 = −10V 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 Qg − Gate Charge − nC 2.5 3.0 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD75204W15 SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated). Specifications and graphs are Per MOSFET unless otherwise stated. Drain to Drain measurements are done with both MOSFETs in series (common source configuration. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVD1D2 Drain to Drain Voltage VGS = 0V, ID1D2 = –250mA –20 BVGSS Gate to Source Voltage VD1D2 = 0V, IG = -250mA -6.1 IDDS Drain to Drain Leakage Current VGS = 0V, VD1D2 = –16V IGSS Gate to Source Leakage Current VD1D2 = 0V, VGS = -6V VGS(th) Gate to Source Threshold Voltage VD1D2 = VGS, IDS = –250mA RD1D2(on) Drain to Drain On Resistance gfs Transconductance –0.5 V -7.2 V –1 mA –100 nA –0.7 –0.9 V VGS = –1.8V, ID1D2 = –1A 140 175 mΩ VGS = –2.5V, ID1D2 = –1A 105 130 mΩ VGS = –4.5V, ID1D2 = –1A 80 100 mΩ VD1D2 = –10V, ID1D2 = –1A 5.3 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 315 410 pF 128 165 CRSS pF Reverse Transfer Capacitance 43 55 pF Qg Gate Charge Total (–4.5V) 2.8 3.9 nC Qgd Gate Charge - Gate to Drain Qgs Gate Charge - Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VD1D2 = –10V, f = 1MHz VD1D2 = –10V, ID1D2 = –1A VD1D2 = –9.5V, VGS = 0V VD1D2 = –10V, VGS = –4.5V, ID1D2 = –1A, RG = 30Ω 0.6 nC 0.5 nC 0.2 nC 2.2 nC 7.8 ns 6.7 ns 45 ns 26 ns Diode Characteristics VSD Diode Forward Voltage ID1D2 = –1A, VGS = 0V 0.75 1 V Qrr Reverse Recovery Charge Vdd = –9.5V, IF = –1A, di/dt = 200A/ms 10.5 nC trr Reverse Recovery Time Vdd = –9.5V, IF = –1A, di/dt = 200A/ms 23 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJA (1) (2) (3) 2 Thermal Resistance Junction to Ambient Thermal Resistance Junction to Ambient (1) (2) (3) (2) MIN TYP MAX UNIT 200 °C/W 94 °C/W Device mounted on FR4 material with Minimum Cu mounting area. Measured with both devices biased in a parallel condition. Device mounted on FR4 material with 1-inch2 of Cu (2oz). Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 CSD75204W15 www.ti.com SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 Max RqJA = 94°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. G1 S G2 D2 D1 Max RqJA = 200°C/W when mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu. G1 S G2 D2 D1 M0169-01 M0170-01 TYPICAL MOSFET CHARACTERISTICS Graphs are Per MOSFET at TA = 25°C, unless stated otherwise. Drain to Drain measurements are done with both MOSFETs in series (common source configuration). ZθJA − Normalized Thermal Impedance 10 1 0.5 0.3 0.1 0.1 0.05 Duty Cycle = t1/t2 0.02 0.01 0.01 P t1 Single Pulse t2 0.001 Typical RqJA = 161oC/W (min Cu) TJ = P x ZqJA x RqJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t P − Pulse Duration − s 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 3 CSD75204W15 SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) Graphs are Per MOSFET at TA = 25°C, unless stated otherwise. Drain to Drain measurements are done with both MOSFETs in series (common source configuration). 5.0 −ID1D2 − Drain to Drain Current − A −ID1D2 − Drain to Drain Current − A 5.0 4.5 4.0 VGS = −1.8V VGS = −2V 3.5 3.0 2.5 2.0 VGS = −1.5V VGS = −2.5V 1.5 1.0 VGS = −4.5V 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 4.0 3.5 TJ = 125°C 3.0 2.5 2.0 TJ = 25°C 1.5 1.0 TJ = −55°C 0.5 0.0 0.50 3.0 −VD1D2 − Drain to Drain Voltage − V VD1D2 = −5V 4.5 0.75 C − Capacitance − pF −VGS − Gate to Source Voltage − V 3 2 1 300 250 COSS = CDS + CGD CISS = CGD + CGS 200 150 CRSS = CGD 100 50 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 RD1D2(on) − On-State Resistance − mΩ ID1D2 = −250µA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 −25 25 75 15 20 G004 Figure 5. Capacitance 1.0 0.9 10 −VD1D2 − Drain to Drain Voltage − V G003 Figure 4. Gate Charge −VGS(th) − Threshold Voltage − V G002 f = 1MHz VGS = 0V 350 Qg − Gate Charge − nC 125 175 TJ − Junction Temperature − °C 300 ID1D2 = −1A 250 200 TJ = 125°C TJ = 25°C 150 100 50 0 0 1 2 3 4 −VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 4 1.75 400 ID1D2 = −1A VD1D2 = −10V 4 0.0 −75 1.50 Figure 3. Transfer Characteristics 6 0 0.0 1.25 −VGS − Gate to Source Voltage − V G001 Figure 2. Saturation Characteristics 5 1.00 5 6 G006 Figure 7. On-State Resistance vs. Gate to Source Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 CSD75204W15 www.ti.com SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) Graphs are Per MOSFET at TA = 25°C, unless stated otherwise. Drain to Drain measurements are done with both MOSFETs in series (common source configuration). 10 1.4 ID1D2 = −1A VGS = −4.5V −ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 TJ = 125°C 1 0.1 TJ = 25°C 0.01 0.001 0.0001 −25 25 75 125 TJ − Case Temperature − °C 175 0.0 0.8 1.0 1.2 1.4 G008 4.5 −ID1D2 − Drain to Drain Current − A −ID1D2 − Drain to Drain Current − A 0.6 Figure 9. Typical Diode Forward Voltage 100 10 1ms 1 10ms 0.01 0.1 0.4 −VSD − Source to Drain Voltage − V G007 Figure 8. Normalized On-State Resistance vs. Temperature 0.1 0.2 Area Limited by RD1D2(on) 100ms Single Pulse Typical RqJA = 161oC/W (min Cu) 1 DC 10 100 −VD1D2 − Drain to Drain Voltage − V Figure 10. Maximum Safe Operating Area 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature − °C G009 G011 Figure 11. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 5 CSD75204W15 SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA CSD75204W15 Package Dimensions Solder Ball Ø 0.31 ±0.075 Pin 1 Mark 1 2 3 2 3 1 A B 1.50 B 1.00 +0.00 –0.08 0.50 A C C 1.50 +0.00 –0.08 0.62 Max Top View 0.50 Bottom View 0.04 0.62 Max 0.35 ±0.10 Side View Seating Plate Front View M0171-01 NOTE: All dimensions are in mm (unless otherwise specified) Pinout POSITION 6 DESIGNATION A1 Gate1 A2, A3, B3 Drain1 C1 Gate2 C2, C3, B2 Drain2 B1 Source Sense Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 CSD75204W15 www.ti.com SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 Land Pattern Recommendation Ø 0.25 1 2 3 1.00 0.50 A B C 0.50 M0172-01 NOTE: All dimensions are in mm (unless otherwise specified) Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 0.50 ±0.05 0.86 ±0.05 1.60 ±0.05 5° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 1.60 ±0.05 5° Max M0173-01 NOTE: All dimensions are in mm (unless otherwise specified) Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 7 CSD75204W15 SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 www.ti.com REVISION HISTORY Changes from Original (October 2009) to Revision A • 8 Page Deleted the Package Marking Information sectiom .............................................................................................................. 7 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD75204W15 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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