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CSD83325L
SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
1
Product Summary
Common Drain Configuration
Low-On Resistance
Small Footprint of 2.2 mm × 1.15 mm
Lead Free
RoHS Compliant
Halogen Free
Gate ESD Protection
TA = 25°C
TYPICAL VALUE
Source-to-Source Voltage
12
V
Qg
Gate Charge Total (4.5 V)
8.4
nC
Qgd
Gate Charge Gate-to-Drain
RS1S2(on)
VGS(th)
nC
17.5
mΩ
Source-to-Source On Resistance VGS = 3.8 V
10.9
mΩ
VGS = 4.5 V
9.9
mΩ
Threshold Voltage
0.95
V
Device Information(1)
Battery Management
Battery Protection
DEVICE
QTY
CSD83325L
3000
CSD83325LT
3 Description
S2
G1
G2
PACKAGE
SHIP
7-Inch Reel
2.20-mm × 1.15-mm
Land Grid Array (LGA)
Package
Tape
and
Reel
Absolute Maximum Ratings
TA = 25°C
Top View
S1
250
MEDIA
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
small footprint and common drain configuration make
the device ideal for battery pack applications in small
handheld devices.
S1
1.9
VGS = 2.5 V
2 Applications
•
•
UNIT
VS1S2
VALUE
UNIT
VS1S2
Source-to-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±10
V
IS
Continuous Source Current(1)
8
A
ISM
Pulsed Source Current(2)
52
A
PD
Power Dissipation
2.3
W
V(ESD)
Human-Body Model (HBM)
2000
V
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150
°C
S2
(1) Device operating at a temperature of 105ºC.
(2) Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100 μs, duty
cycle ≤ 1%.
Configuration
Source 1
Source 2
Gate 1
Gate 2
.
.
RDS(on) vs VGS
Gate Charge
8
TC = 25°C, I D = 5 A
TC = 125°C, I D = 5 A
27
VGS - Gate-to-Source Voltage (V)
RS1S2(on) - On-State Resistance (m:)
30
24
21
18
15
12
9
6
3
0
IS1S2 = 5 A
VS1S2 = 6 V
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
9
10
D007
0
2
4
6
8
10
Qg - Gate Charge (nC)
12
14
16
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD83325L
SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Device and Documentation Support.................... 7
6.1
6.2
6.3
6.4
6.5
7
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Package Dimensions ................................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Pattern ................................. 9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (January 2016) to Revision B
Page
•
Added Diode Characteristics (VF(S-S)) in the Electrical Characteristics table .......................................................................... 3
•
Added Figure 9 to Typical MOSFET Characteristics section ................................................................................................. 4
•
Added Receiving Notification of Documentation Updates section to Device and Documentation Support section............... 7
Changes from Original (November 2014) to Revision A
Page
•
Improved graph setup for readability ...................................................................................................................................... 4
•
Added Community Resources ............................................................................................................................................... 7
2
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SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVS1S2
Source-to-source voltage
VGS = 0 V, IS = 250 μA
IS1S2
Source-to-source leakage current
VGS = 0 V, VS1S2 = 9.6 V
1
μA
IGSS
Gate-to-source leakage current
VS1S2 = 0 V, VGS = 10 V
10
µA
VGS(th)
Gate-to-source threshold voltage
VS1S2 = VGS, IS = 250 μA
0.75
0.95
1.25
V
VGS = 2.5 V, IS = 5 A
14.0
17.5
23.0
mΩ
VGS = 3.8 V, IS = 5 A
8.8
10.9
13.0
mΩ
VGS = 4.5 V, IS = 5 A
7.9
9.9
11.9
mΩ
RS1S2(on)
Source-to-source on resistance
gfs
Transconductance
12
VS1S2 = 1.2 V, IS = 5 A
V
36
S
DYNAMIC CHARACTERISTICS (1)
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Gate charge total (4.5 V)
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
353
ns
td(off)
Turnoff delay time
711
ns
tf
Fall time
589
ns
VGS = 0 V, VS1S2 = 6 V, ƒ = 1 MHz
VS1S2 = 6 V, IS = 5 A
VS1S2 = 6 V, VGS = 0 V
VS1S2 = 6 V, VGS = 4.5 V,
IS1S2 = 5 A, RG = 0 Ω
902
1170
pF
187
243
pF
111
144
pF
8.4
10.9
nC
1.9
nC
2.2
nC
0.6
nC
2.9
nC
205
ns
DIODE CHARACTERISTICS
VF(S-S)
(1)
Source-to-source diode forward voltage
ISS = 5 A, VG1S1 = 0 V, VG2S2 = 4.5 V
0.79
1.0
TYP
MAX
V
Dynamic characteristics values specified are per single FET.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
(1)
(2)
MIN
(1)
150
Junction-to-ambient thermal resistance (2)
55
Junction-to-ambient thermal resistance
UNIT
°C/W
Device mounted on FR4 material with minimum Cu mounting area.
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
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SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
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5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
50
50
45
45
IS1S2 - Source-to-Source Current (A)
IS1S2 - Source-to-Source Current (A)
Figure 1. Transient Thermal Impedance
40
35
30
25
20
15
10
VGS = 2.5 V
VGS = 3.8 V
VGS = 4.5 V
5
0
TC = 125°C
TC = 25°C
TC = -55°C
40
35
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VS1S2 - Source-to-Source Voltage (V)
1.6
1.8
0
D002
0.5
1
1.5
2
VGS - Gate-to-Source Voltage (V)
2.5
D003
VS1S2 = 5 V
Figure 2. Saturation Characteristics
4
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Figure 3. Transfer Characteristics
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SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
10000
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
7
6
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
8
5
4
3
2
1000
100
1
10
0
0
2
4
6
8
10
Qg - Gate Charge (nC)
IS = 5 A
12
14
0
16
2
D004
Figure 4. Gate Charge
D005
Figure 5. Capacitance
30
RS1S2(on) - On-State Resistance (m:)
VGS(th) - Threshold Voltage (V)
12
VS1S2 = 6 V
1.25
1.15
1.05
0.95
0.85
0.75
0.65
0.55
0.45
-75
4
6
8
10
VS1S2 - Source-to-Source Voltage (V)
TC = 25°C, I S = 5 A
TC = 125°C, I S = 5 A
27
24
21
18
15
12
9
6
3
0
-50
-25
0
25
50
75 100
TC - Case Temperature (°C)
125
150
0
175
1
2
D006
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
9
10
D007
IS = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Source-to-Source Resistance vs Gate-toSource Voltage
100
1.4
VGS = 2.5 V
VGS = 3.8 V
VGS = 4.5 V
ISS - Source-to-Source Current (A)
Normalized On-State Resistance
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
-75
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
175
0
0.2
D008
0.4
0.6
0.8
1
VSS - Source-to-Source Voltage (V)
1.2
1.4
D009
IS = 5 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
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SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
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Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
10
IS1S2 - Source-to-Source Current (A)
IS1S2 - Source-to-Source Current (A)
100
10
1
100 ms
10 ms
0.1
0.1
1 ms
100 µs
1
10
VS1S2 - Source-to-Source Voltage (V)
100
8
6
4
2
0
-50
-25
D009
0
25
50
75
100 125
TC - Case Temperature (°C)
150
175
D010
Single pulse, max RθJA = 150°C/W
Figure 10. Maximum Safe Operating Area
6
Figure 11. Maximum Source Current vs Temperature
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SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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CSD83325L
SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
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7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Package Dimensions
0.65 TYP
B
1.15
1.07
A
0.325 TYP
2
1
PIN A1
CORNER
A
0.65
TYP
2.20
2.12
SYMM
2X
B
1.3
C
0.33
0.27
C A
B
6X
0.015
SYMM
0.200 ±0.02
C
SEATING PLANE
All dimensions in millimeters.
8
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SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017
7.2 Recommended PCB Pattern
(0.65) TYP
6X ( 0.3)
1
2
A
(0.65) TYP
SYMM
B
C
SYMM
7.3 Recommended Stencil Pattern
(0.65) TYP
6X ( 0.3)
2
1
A
(0.65) TYP
SYMM
B
(R0.05) TYP
METAL
TYP
C
SYMM
All dimensions are in millimeters.
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Jan-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD83325L
ACTIVE
PICOSTAR
YJE
6
3000
RoHS & Green
NIAU
Level-1-260C-UNLIM
CSD83325LT
ACTIVE
PICOSTAR
YJE
6
250
RoHS & Green
NIAU
Level-1-260C-UNLIM
83325L
-55 to 150
83325L
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of