CSD83325LT

Order Now Product Folder Support & Community Tools & Software Technical Documents CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Common Drain Configuration Low-On Resistance Small Footprint of 2.2 mm × 1.15 mm Lead Free RoHS Compliant Halogen Free Gate ESD Protection TA = 25°C TYPICAL VALUE Source-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 8.4 nC Qgd Gate Charge Gate-to-Drain RS1S2(on) VGS(th) nC 17.5 mΩ Source-to-Source On Resistance VGS = 3.8 V 10.9 mΩ VGS = 4.5 V 9.9 mΩ Threshold Voltage 0.95 V Device Information(1) Battery Management Battery Protection DEVICE QTY CSD83325L 3000 CSD83325LT 3 Description S2 G1 G2 PACKAGE SHIP 7-Inch Reel 2.20-mm × 1.15-mm Land Grid Array (LGA) Package Tape and Reel Absolute Maximum Ratings TA = 25°C Top View S1 250 MEDIA (1) For all available packages, see the orderable addendum at the end of the data sheet. This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices. S1 1.9 VGS = 2.5 V 2 Applications • • UNIT VS1S2 VALUE UNIT VS1S2 Source-to-Source Voltage 12 V VGS Gate-to-Source Voltage ±10 V IS Continuous Source Current(1) 8 A ISM Pulsed Source Current(2) 52 A PD Power Dissipation 2.3 W V(ESD) Human-Body Model (HBM) 2000 V TJ, Tstg Operating Junction Temperature, Storage Temperature –55 to 150 °C S2 (1) Device operating at a temperature of 105ºC. (2) Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. Configuration Source 1 Source 2 Gate 1 Gate 2 . . RDS(on) vs VGS Gate Charge 8 TC = 25°C, I D = 5 A TC = 125°C, I D = 5 A 27 VGS - Gate-to-Source Voltage (V) RS1S2(on) - On-State Resistance (m:) 30 24 21 18 15 12 9 6 3 0 IS1S2 = 5 A VS1S2 = 6 V 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 D007 0 2 4 6 8 10 Qg - Gate Charge (nC) 12 14 16 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 6.2 6.3 6.4 6.5 7 Receiving Notification of Documentation Updates.... Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 Package Dimensions ................................................ 8 7.2 Recommended PCB Pattern..................................... 9 7.3 Recommended Stencil Pattern ................................. 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (January 2016) to Revision B Page • Added Diode Characteristics (VF(S-S)) in the Electrical Characteristics table .......................................................................... 3 • Added Figure 9 to Typical MOSFET Characteristics section ................................................................................................. 4 • Added Receiving Notification of Documentation Updates section to Device and Documentation Support section............... 7 Changes from Original (November 2014) to Revision A Page • Improved graph setup for readability ...................................................................................................................................... 4 • Added Community Resources ............................................................................................................................................... 7 2 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L CSD83325L www.ti.com SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 9.6 V 1 μA IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 10 V 10 µA VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS = 250 μA 0.75 0.95 1.25 V VGS = 2.5 V, IS = 5 A 14.0 17.5 23.0 mΩ VGS = 3.8 V, IS = 5 A 8.8 10.9 13.0 mΩ VGS = 4.5 V, IS = 5 A 7.9 9.9 11.9 mΩ RS1S2(on) Source-to-source on resistance gfs Transconductance 12 VS1S2 = 1.2 V, IS = 5 A V 36 S DYNAMIC CHARACTERISTICS (1) Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Gate charge total (4.5 V) Qgd Gate charge gate-to-drain Qgs Gate charge gate-to-source Qg(th) Gate charge at Vth Qoss Output charge td(on) Turnon delay time tr Rise time 353 ns td(off) Turnoff delay time 711 ns tf Fall time 589 ns VGS = 0 V, VS1S2 = 6 V, ƒ = 1 MHz VS1S2 = 6 V, IS = 5 A VS1S2 = 6 V, VGS = 0 V VS1S2 = 6 V, VGS = 4.5 V, IS1S2 = 5 A, RG = 0 Ω 902 1170 pF 187 243 pF 111 144 pF 8.4 10.9 nC 1.9 nC 2.2 nC 0.6 nC 2.9 nC 205 ns DIODE CHARACTERISTICS VF(S-S) (1) Source-to-source diode forward voltage ISS = 5 A, VG1S1 = 0 V, VG2S2 = 4.5 V 0.79 1.0 TYP MAX V Dynamic characteristics values specified are per single FET. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN (1) 150 Junction-to-ambient thermal resistance (2) 55 Junction-to-ambient thermal resistance UNIT °C/W Device mounted on FR4 material with minimum Cu mounting area. Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L 3 CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 www.ti.com 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) 50 50 45 45 IS1S2 - Source-to-Source Current (A) IS1S2 - Source-to-Source Current (A) Figure 1. Transient Thermal Impedance 40 35 30 25 20 15 10 VGS = 2.5 V VGS = 3.8 V VGS = 4.5 V 5 0 TC = 125°C TC = 25°C TC = -55°C 40 35 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VS1S2 - Source-to-Source Voltage (V) 1.6 1.8 0 D002 0.5 1 1.5 2 VGS - Gate-to-Source Voltage (V) 2.5 D003 VS1S2 = 5 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L CSD83325L www.ti.com SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 10000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 7 6 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 8 5 4 3 2 1000 100 1 10 0 0 2 4 6 8 10 Qg - Gate Charge (nC) IS = 5 A 12 14 0 16 2 D004 Figure 4. Gate Charge D005 Figure 5. Capacitance 30 RS1S2(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 12 VS1S2 = 6 V 1.25 1.15 1.05 0.95 0.85 0.75 0.65 0.55 0.45 -75 4 6 8 10 VS1S2 - Source-to-Source Voltage (V) TC = 25°C, I S = 5 A TC = 125°C, I S = 5 A 27 24 21 18 15 12 9 6 3 0 -50 -25 0 25 50 75 100 TC - Case Temperature (°C) 125 150 0 175 1 2 D006 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 D007 IS = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Source-to-Source Resistance vs Gate-toSource Voltage 100 1.4 VGS = 2.5 V VGS = 3.8 V VGS = 4.5 V ISS - Source-to-Source Current (A) Normalized On-State Resistance 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 -75 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 TC - Case Temperature (qC) 125 150 175 0 0.2 D008 0.4 0.6 0.8 1 VSS - Source-to-Source Voltage (V) 1.2 1.4 D009 IS = 5 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L 5 CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 10 IS1S2 - Source-to-Source Current (A) IS1S2 - Source-to-Source Current (A) 100 10 1 100 ms 10 ms 0.1 0.1 1 ms 100 µs 1 10 VS1S2 - Source-to-Source Voltage (V) 100 8 6 4 2 0 -50 -25 D009 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 D010 Single pulse, max RθJA = 150°C/W Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Source Current vs Temperature Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L CSD83325L www.ti.com SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.3 Trademarks NexFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L 7 CSD83325L SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Package Dimensions 0.65 TYP B 1.15 1.07 A 0.325 TYP 2 1 PIN A1 CORNER A 0.65 TYP 2.20 2.12 SYMM 2X B 1.3 C 0.33 0.27 C A B 6X 0.015 SYMM 0.200 ±0.02 C SEATING PLANE All dimensions in millimeters. 8 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L CSD83325L www.ti.com SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 7.2 Recommended PCB Pattern (0.65) TYP 6X ( 0.3) 1 2 A (0.65) TYP SYMM B C SYMM 7.3 Recommended Stencil Pattern (0.65) TYP 6X ( 0.3) 2 1 A (0.65) TYP SYMM B (R0.05) TYP METAL TYP C SYMM All dimensions are in millimeters. www.ti.com Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated Product Folder Links: CSD83325L 9 PACKAGE OPTION ADDENDUM www.ti.com 11-Jan-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD83325L ACTIVE PICOSTAR YJE 6 3000 RoHS & Green NIAU Level-1-260C-UNLIM CSD83325LT ACTIVE PICOSTAR YJE 6 250 RoHS & Green NIAU Level-1-260C-UNLIM 83325L -55 to 150 83325L (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of