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CSD87384M
SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
CSD87384M Synchronous Buck NexFET™ Power Block II
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
•
The CSD87384M NexFET™ Power Block II is a
highly optimized design for synchronous buck
applications offering high current and high efficiency
capability in a small 5.0 mm × 3.5 mm outline.
Optimized for 5 V gate drive applications, this product
offers an efficient and flexible solution capable of
providing a high density power supply when paired
with any 5 V gate drive from an external controller or
driver.
1
Half-Bridge Power Block
90.5% System Efficiency at 25 A
Up to 30 A Operation
High Density – 5 mm x 3.5 mm LGA Footprint
Double-Side Cooling Capability
Ultra-Low Profile – 0.48 mm Max
Optimized for 5 V Gate Drive
Low Switching Losses
Ultra-Low Inductance Package
RoHS Compliant
Halogen Free
Pb-Free
TEXT ADDED FOR SPACING
Ordering Information(1)
•
•
Media
Qty
13-Inch Reel
2500
CSD87384MT
7-Inch Reel
250
Package
Ship
5 × 3.5 LGA
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
Device
CSD87384M
Synchronous Buck Converters
– High Frequency Applications
– High Current, Low Duty Cycle Applications
Multiphase Synchronous Buck Converters
POL DC-DC Converters
TEXT ADDED FOR SPACING
1
VIN
TG
PGND
BG
VSW
Typical Circuit
Typical Power Block Efficiency and Power Loss
VIN
VDD
VDD
100
7
90
6
BOOT
VIN
DRVH
VSW
ENABLE
PWM
ENABLE
PWM
VOUT
LL
BG
DRVL
PGND
Driver IC
VGS = 5V
VIN = 12V
VOUT = 1.3V
LOUT = 0.29µH
fSW = 500kHz
TA = 25ºC
80
Efficiency (%)
GND
70
60
5
4
3
50
2
40
1
Power Loss (W)
TG
CSD87384M
30
0
3
6
9
12
15
18
21
Output Current (A)
24
27
30
0
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD87384M
SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
5.1
5.2
5.3
5.4
5.5
5.6
5.7
3
3
3
4
4
5
7
Absolute Maximum Ratings ......................................
Recommended Operating Conditions.......................
Power Block Performance ........................................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Power Block Device Characteristics.............
Typical Power Block MOSFET Characteristics.........
Application and Implementation ........................ 10
6.1 Application Information............................................ 10
6.2 Power Loss Curves ................................................ 10
6.3 Safe Operating Curves (SOA) ................................ 10
6.4 Normalized Curves.................................................. 10
6.5 Calculating Power Loss and SOA .......................... 12
7
Layout ................................................................... 13
7.1 Layout Guidelines ................................................... 13
7.2 Layout Example ...................................................... 13
8
Device and Documentation Support.................. 14
8.1 Trademarks ............................................................. 14
8.2 Electrostatic Discharge Caution .............................. 14
8.3 Glossary .................................................................. 14
9
Mechanical, Packaging, and Orderable
Information ........................................................... 15
9.1
9.2
9.3
9.4
9.5
9.6
CSD87384M Package Dimensions.........................
Land Pattern Recommendation ..............................
Stencil Recommendation (100 µm).........................
Stencil Recommendation (125 µm).........................
Pin Drawing.............................................................
CSD87384M Embossed Carrier Tape Dimensions
15
16
16
17
17
18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (May 2014) to Revision D
Page
•
Changed capacitance units to read pF in Figure 15 ............................................................................................................. 8
•
Changed capacitance units to read pF in Figure 16 ............................................................................................................. 8
Changes from Revision A (September 2013) to Revision B
Page
•
Added small reel info .............................................................................................................................................................. 1
•
Changed Figure 16................................................................................................................................................................. 8
Changes from Original (September 2013) to Revision A
•
2
Page
Changed VGS(th) from 1.0 V to 1.1 V in the Electrical Characteristics table............................................................................ 4
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Copyright © 2013–2015, Texas Instruments Incorporated
CSD87384M
www.ti.com
SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
5 Specifications
5.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)
(1)
VIN to PGND
MIN
MAX
–0.8
30
VSW to PGND
Voltage
UNIT
30
VSW to PGND (10 ns)
32
TG to VSW
–8
10
BG to PGND
–8
10
V
IDM
Pulsed Current Rating (2)
PD
Power Dissipation (3)
EAS
Avalanche Energy
TJ
Operating Junction
–55
150
°C
Tstg
Storage Temperature Range
–55
150
°C
(1)
(2)
(3)
Sync FET, ID = 68, L = 0.1 mH
95
A
8
W
231
Control FET, ID = 31, L = 0.1 mH
48
mJ
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
Pulse Duration ≤50 µs, duty cycle ≤0.01
Device mounted on FR4 material with 1 inch2 (6.45 cm2) Cu
5.2 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
VGS
Gate Drive Voltage
VIN
Input Supply Voltage
ƒSW
Switching Frequency
4.5
8
24
CBST = 0.1 μF (min)
Operating Current
TJ
MAX
200
1500
UNIT
V
V
kHz
No Airflow
30
A
With Airflow (200 LFM)
35
A
With Airflow + Heat Sink
40
A
125
°C
MAX
UNIT
Operating Temperature
5.3 Power Block Performance
TA = 25°C (unless otherwise noted)
PARAMETER
CONDITIONS
PLOSS
Power Loss (1)
VIN = 12 V, VGS = 5 V
VOUT = 1.3 V, IOUT = 25 A
fSW = 500 kHz
LOUT = 0.3 µH, TJ = 25ºC
IQVIN
VIN Quiescent Current
TG to TGR = 0 V
BG to PGND = 0 V
(1)
MIN
TYP
3.7
W
10
µA
Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and
using a high current 5 V driver IC.
Copyright © 2013–2015, Texas Instruments Incorporated
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SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
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5.4 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
RθJC
(1)
(2)
Junction-to-ambient thermal resistance (Min Cu)
Junction-to-ambient thermal resistance (Max Cu)
TYP
MAX
UNIT
153
(2) (1)
Junction-to-case thermal resistance (Top of package)
Junction-to-case thermal resistance (PGND Pin)
MIN
(1)
67
(1)
3.0
(1)
°C/W
1.25
RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch
(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board
design.
Device mounted on FR4 material with 1 inch2 (6.45 cm2) Cu.
5.5 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
Q1 Control FET
MIN
TYP
Q2 Sync FET
MAX
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, IDS = 250 μA
IDSS
Drain-to-Source Leakage
Current
VGS = 0 V, VDS = 24 V
1
1
μA
IGSS
Gate-to-Source Leakage
Current
VDS = 0 V, VGS = 10 V
100
100
nA
VGS(th)
Gate-to-Source Threshold
Voltage
VDS = VGS, IDS = 250 μA
1.7
V
RDS(on)
Drain-to-Source On-Impedance
gƒs
Transconductance
30
30
1.1
1.9
V
1.1
VGS = 4.5 V, IDS = 25 A
7.5
8.9
2.15
2.6
VGS = 8 V, IDS = 25 A
6.4
7.7
1.95
2.4
VDS = 10 V, IDS = 25 A
67
240
mΩ
S
DYNAMIC CHARACTERISTICS
(1)
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
(1)
Reverse Transfer Capacitance
VGS = 0 V, VDS = 15 V,
f = 1MHz
(1)
(1)
RG
Series Gate Resistance
Qg
Gate Charge Total (4.5 V)
Qgd
Gate Charge – Gate-to-Drain
Qgs
Gate Charge – Gate-to-Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tƒ
Fall Time
(1)
VDS = 15 V,
IDS = 25 A
VDD = 12 V, VGS = 0 V
VDS = 15 V, VGS = 4.5 V,
IDS = 25 A, RG = 2 Ω
884
1150
3760
4890
pF
452
588
1110
1440
pF
19.4
25.2
87
114
pF
1.0
2.0
0.7
1.4
Ω
7.1
9.2
31
40
nC
1.5
8.6
nC
2.7
8.6
nC
1.3
5.4
nC
11.3
37
nC
8.7
17.5
ns
56
49
ns
14
29
ns
7.6
8.2
ns
V
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
IDS = 25 A, VGS = 0 V
0.85
0.80
Qrr
Reverse Recovery Charge
51
nC
Reverse Recovery Time
Vdd = 15 V, IF = 25 A,
di/dt = 300 A/μs
21
trr
21
32
ns
(1)
4
Specified by design
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SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
Max RθJA = 67°C/W
when mounted on
1 inch2 (6.45 cm2) of
2 oz. (0.071 mm thick)
Cu.
Max RθJA = 153°C/W
when mounted on
minimum pad area of
2 oz. (0.071 mm thick)
Cu.
5.6 Typical Power Block Device Characteristics
TJ = 125°C, unless stated otherwise. For Figure 3 and Figure 4, the Typical Power Block System Characteristic curves are
based on measurements made on a PCB design with dimensions of 4.0 inches (W) × 3.5 inches (L) × 0.062 inch (H) and 6
copper layers of 1 oz. copper thickness. See Application and Implementation for detailed explanation.
8
1.1
VIN = 12V
VGS = 5V
VOUT = 1.3V
fSW = 500kHz
LOUT = 0.29µH
Power Loss (W)
6
5
4
3
2
1
4
7
10
13
16
19
Output Current (A)
22
25
0.8
0.7
0.5
−50
28 30
30
30
25
25
Output Current (A)
35
20
15
400LFM
200LFM
100LFM
Nat Conv
5
0
0
10
20
30
40
50
60
70
Ambient Temperature (ºC)
25
50
75
100
Junction Temperature (ºC)
80
125
150
G001
20
15
VIN = 12V
VGS = 5V
VOUT = 1.3V
fSW = 500kHz
LOUT = 0.29µH
10
5
90
G001
Figure 3. Safe Operating Area – PCB Horizontal Mount
Copyright © 2013–2015, Texas Instruments Incorporated
0
Figure 2. Normalized Power Loss vs Temperature
35
10
−25
G001
Figure 1. Power Loss vs Output Current
Output Current (A)
0.9
0.6
1
0
VIN = 12V
VGS = 5V
VOUT = 1.3V
fSW = 500kHz
LOUT = 0.29µH
1
Power Loss, Normalized
7
0
0
20
40
60
80
100
Board Temperature (ºC)
120
140
G001
Figure 4. Typical Safe Operating Area
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Typical Power Block Device Characteristics (continued)
1.4
3.4
1.3
2.5
1.2
1.7
1.1
0.8
1.2
0.4
−1.7
1
0.0
−2.5
600 800 1000 1200 1400 1600 1800
Switching Frequency (kHz)
0.95
−0.8
0
G001
5
3.3
1.4
1.7
1.2
VIN = 12V
VGS = 5V
fSW = 500kHz
LOUT = 0.29µH
IOUT = 30A
1
0.8
1.3
1.8
2.3 2.8 3.3 3.8
Output Voltage (V)
4.3
4.8
0
−1.7
−3.3
5.3
Figure 7. Normalized Power Loss vs Output Voltage
6
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Power Loss, Normalized
1.6
SOA Temperature Adj (ºC)
Power Loss, Normalized
6.7
4
6
8
10 12 14 16
Input Voltage (V)
18
20
22
24
G001
0.59
VIN = 12V
VGS = 5V
VOUT = 1.3V
fSW = 500kHz
IOUT = 30A
1.05
1.04
1.03
0.51
0.42
0.34
0.25
1.02
0.17
1.01
0.08
0
1
0.99
−0.08
0.98
−0.17
0.97
−0.25
0.96
G001
−0.4
Figure 6. Normalized Power Loss vs Input Voltage
1.06
1.8
2
1.07
8.3
2
0.8
1.7
1.05
0.0
Figure 5. Normalized Power Loss vs Switching Frequency
0.6
0.3
2.1
0.8
0.8
400
1.25
2.5
1.1
0.9
200
1.3
1.3
VIN = 12V
VGS = 5V
VOUT = 1.3V
LOUT = 0.29µH
IOUT = 30A
0
VGS = 5V
VOUT = 1.3V
LOUT = 0.29µH
fSW = 500kHz
IOUT = 30A
1.15
1
0.7
3.0
1.35
SOA Temperature Adj (ºC)
4.2
0
−0.34
100 200 300 400 500 600 700 800 900 1000 1100
Output Inductance (nH)
SOA Temperature Adj (ºC)
5.1
1.5
Power Loss, Normalized
1.6
SOA Temperature Adj (ºC)
Power Loss, Normalized
TJ = 125°C, unless stated otherwise. For Figure 3 and Figure 4, the Typical Power Block System Characteristic curves are
based on measurements made on a PCB design with dimensions of 4.0 inches (W) × 3.5 inches (L) × 0.062 inch (H) and 6
copper layers of 1 oz. copper thickness. See Application and Implementation for detailed explanation.
G001
Figure 8. Normalized Power Loss vs Output Inductance
Copyright © 2013–2015, Texas Instruments Incorporated
CSD87384M
www.ti.com
SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
5.7 Typical Power Block MOSFET Characteristics
100
200
90
180
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
TA = 25°C, unless stated otherwise.
80
70
60
50
40
30
VGS = 8.0V
VGS = 4.5V
VGS = 4.0V
20
10
0
0
0.3
0.6
0.9
1.2
VDS - Drain-to-Source Voltage (V)
160
140
120
100
80
60
20
0
1.5
VGS = 8.0V
VGS = 4.5V
VGS = 4.0V
40
0
0.1
G001
Figure 9. Control MOSFET Saturation
VDS = 5V
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
200
100
10
1
0.1
0.01
0.0001
TC = 125°C
TC = 25°C
TC = −55°C
0
0.5
1
1.5
2
2.5
3
VGS - Gate-to-Source Voltage (V)
3.5
4
VDS = 5V
1
0.1
0.01
TC = 125°C
TC = 25°C
TC = −55°C
0.001
0.0001
0
0.5
G001
Figure 11. Control MOSFET Transfer
1
1.5
2
2.5
VGS - Gate-to-Source Voltage (V)
3
G001
Figure 12. Sync MOSFET Transfer
10
ID = 25A
VDS = 15V
9
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
G001
10
10
8
7
6
5
4
3
2
1
0
0.6
Figure 10. Sync MOSFET Saturation
100
0.001
0.2
0.3
0.4
0.5
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
10
12
Qg - Gate Charge (nC)
14
Figure 13. Control MOSFET Gate Charge
Copyright © 2013–2015, Texas Instruments Incorporated
16
G001
ID = 25A
VDS =15V
9
8
7
6
5
4
3
2
1
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Qg - Gate Charge (nC)
G001
Figure 14. Sync MOSFET Gate Charge
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Typical Power Block MOSFET Characteristics (continued)
TA = 25°C, unless stated otherwise.
1000
1000
C − Capacitance (pF)
10000
C − Capacitance (pF)
10000
100
10
1
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
100
10
1
30
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
0
Figure 15. Control MOSFET Capacitance
VGS(th) - Threshold Voltage (V)
VGS(th) - Threshold Voltage (V)
ID = 250µA
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
−75
−25
25
75
125
TC - Case Temperature (ºC)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
175
−25
G001
Figure 17. Control MOSFET VGS(th)
25
75
125
TC - Case Temperature (ºC)
175
G001
Figure 18. Sync MOSFET VGS(th)
ID = 25A
18
RDS(on) - On-State Resistance (mΩ)
RDS(on) - On-State Resistance (mΩ)
G001
8
16
14
12
10
8
6
4
TC = 25°C
TC = 125ºC
2
0
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage (V)
9
Figure 19. Control MOSFET RDS(on) vs VGS
8
30
ID = 250µA
0.7
0.6
−75
20
0
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Figure 16. Sync MOSFET Capacitance
1.8
1.7
5
G001
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10
G001
ID = 25A
7
6
5
4
3
2
TC = 25°C
TC = 125ºC
1
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage (V)
9
10
G001
Figure 20. Sync MOSFET RDS(on) vs VGS
Copyright © 2013–2015, Texas Instruments Incorporated
CSD87384M
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SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
Typical Power Block MOSFET Characteristics (continued)
TA = 25°C, unless stated otherwise.
1.6
Normalized On-State Resistance
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
−75
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
Normalized On-State Resistance
ID =25A
VGS = 8V
1.5
−25
25
75
125
TC - Case Temperature (ºC)
ID = 25A
VGS = 8V
1
0.9
0.8
0.7
0.6
−75
175
G001
Figure 21. Control MOSFET Normalized RDS(on)
ISD − Source-to-Drain Current (A)
ISD − Source-to-Drain Current (A)
175
G001
100
10
1
0.1
0.01
0.001
TC = 25°C
TC = 125°C
0
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
1
10
1
0.1
0.01
0.001
0.0001
TC = 25°C
TC = 125°C
0
G001
Figure 23. Control MOSFET Body Diode
1
G001
I(AV) - Peak Avalanche Current (A)
100
10
TC = 25°C
TC = 125°C
1
0.01
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
Figure 24. Sync MOSFET Body Diode
100
I(AV) - Peak Avalanche Current (A)
25
75
125
TC - Case Temperature (ºC)
Figure 22. Sync MOSFET Normalized RDS(on)
100
0.0001
−25
0.1
t(AV) - Time in Avalanche (ms)
1
G001
Figure 25. Control MOSFET Unclamped Inductive Switching
Copyright © 2013–2015, Texas Instruments Incorporated
10
TC = 25°C
TC = 125°C
1
0.01
0.1
t(AV) - Time in Avalanche (ms)
1
G001
Figure 26. Sync MOSFET Unclamped Inductive Switching
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6 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI ’ s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
6.1 Application Information
The CSD87384M NexFET™ power block is an optimized design for synchronous buck applications using 5 V
gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest power loss and
highest system efficiency. As a result, a new rating method is needed which is tailored toward a more systemscentric environment. System level performance curves such as Power Loss, Safe Operating Area, and
normalized graphs allow engineers to predict the product performance in the actual application.
6.2 Power Loss Curves
MOSFET-centric parameters such as RDS(ON) and Qgd are needed to estimate the loss generated by the devices.
To simplify the design process for engineers, TI has provided measured power loss performance curves.
Figure 1 plots the power loss of the CSD87384M as a function of load current. This curve is measured by
configuring and running the CSD87384M as it would be in the final application (see Figure 27). The measured
power loss is the CSD87384M loss and consists of both input conversion loss and gate drive loss. Equation 1 is
used to generate the power loss curve.
(VIN × IIN) + (VDD × IDD) – (VSW_AVG × IOUT) = Power Loss
(1)
The power loss curve in Figure 1 is measured at the maximum recommended junction temperatures of 125°C
under isothermal test conditions.
6.3 Safe Operating Curves (SOA)
The SOA curves in the CSD87384M data sheet provide guidance on the temperature boundaries within an
operating system by incorporating the thermal resistance and system power loss. Figure 3 to Figure 4 outline the
temperature and airflow conditions required for a given load current. The area under the curve dictates the safe
operating area. All the curves are based on measurements made on a PCB design with dimensions of 4 inches
(W) × 3.5 inches (L) × 0.062 inch (T) and 6 copper layers of 1 oz. copper thickness.
6.4 Normalized Curves
The normalized curves in the CSD87384M data sheet provide guidance on the Power Loss and SOA
adjustments based on their application-specific needs. These curves show how the power loss and SOA
boundaries adjust for a given set of systems conditions. The primary y-axis is the normalized change in power
loss and the secondary y-axis is the change in system temperature required to comply with the SOA curve. The
change in power loss is a multiplier for the Power Loss curve and the change in temperature is subtracted from
the SOA curve.
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Normalized Curves (continued)
Input Current (IIN)
A
VDD
A
VDD
V
VIN
Gate Drive V
Voltage (VDD)
VIN
BOOT
DRVH
ENABLE
Input Voltage (VIN)
TG
Output Current (IOUT)
VSW
LL
PWM
PWM
DRVL
GND
Driver IC
A
VOUT
BG
PGND
CSD87384M
Averaging
Circuit
Averaged Switch
V Node Voltage
(VSW_AVG)
Figure 27. Typical Application
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6.5 Calculating Power Loss and SOA
The user can estimate product loss and SOA boundaries by arithmetic means (see Design Example). Though
the Power Loss and SOA curves in this data sheet are taken for a specific set of test conditions, the following
procedure outlines the steps the user should take to predict product performance for any set of system
conditions.
6.5.1 Design Example
Operating Conditions:
• Output Current = 20 A
• Input Voltage = 4 V
• Output Voltage = 1 V
• Switching Frequency = 800 kHz
• Inductor = 0.2 µH
6.5.2 Calculating Power Loss
•
•
•
•
•
•
Power Loss at 20 A = 3.5 W (Figure 1)
Normalized Power Loss for input voltage ≈ 1.18 (Figure 6)
Normalized Power Loss for output voltage ≈ 0.94 (Figure 7)
Normalized Power Loss for switching frequency ≈ 1.15 (Figure 5)
Normalized Power Loss for output inductor ≈ 1.02 (Figure 8)
Final calculated Power Loss = 3.5 W × 1.18 × 0.94 × 1.15 × 1.02 ≈ 4.6 W
6.5.3 Calculating SOA Adjustments
•
•
•
•
•
SOA adjustment for input voltage ≈ 1.5ºC (Figure 6)
SOA adjustment for output voltage ≈ –0.5ºC (Figure 7)
SOA adjustment for switching frequency ≈ 1.2ºC (Figure 5)
SOA adjustment for output inductor ≈ 0.2ºC (Figure 8)
Final calculated SOA adjustment = 1.5 + (–0.5) + 1.2 + 0.2 ≈ 2.4ºC
In the previous design example, the estimated power loss of the CSD87384M would increase to 4.6 W. In
addition, the maximum allowable board and/or ambient temperature would have to decrease by 2.4ºC. Figure 28
graphically shows how the SOA curve would be adjusted accordingly.
1. Start by drawing a horizontal line from the application current to the SOA curve.
2. Draw a vertical line from the SOA curve intercept down to the board or ambient temperature.
3. Adjust the SOA board/ambient temperature by subtracting the temperature adjustment value.
In the design example, the SOA temperature adjustment yields a reduction in allowable board/ambient
temperature of 2.4ºC. In the event the adjustment value is a negative number, subtracting the negative number
would yield an increase in allowable board or ambient temperature.
Figure 28. Power Block SOA
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7 Layout
7.1 Layout Guidelines
7.1.1 Recommended PCB Design Overview
There are two key system-level parameters that can be addressed with a proper PCB design: electrical and
thermal performance. Properly optimizing the PCB layout yields maximum performance in both areas. A brief
description on how to address each parameter is provided.
7.1.2 Electrical Performance
The CSD87384M has the ability to switch voltages at rates greater than 10 kV/µs. Take special care with the
PCB layout design and placement of the input capacitors, inductor, and output capacitors.
• The placement of the input capacitors relative to VIN and PGND pins of CSD87384M device should have the
highest priority during the component placement routine. It is critical to minimize these node lengths. As such,
ceramic input capacitors need to be placed as close as possible to the VIN and PGND pins (see Figure 29).
The example in Figure 29 uses 1 × 10 nF 0402 25 V and 4 × 10 μF 1206 25 V ceramic capacitors (TDK part
number C3216X5R1C106KT or equivalent). Notice there are ceramic capacitors on both sides of the board
with an appropriate amount of vias interconnecting both layers. In terms of priority of placement next to the
Power Stage C21, C5, C8, C19, and C18 should follow in order.
• The switching node of the output inductor should be placed relatively close to the Power Block II CSD87384M
VSW pins. Minimizing the VSW node length between these two components will reduce the PCB conduction
losses and actually reduce the switching noise level. See Figure 29. (1)
7.1.3 Thermal Performance
The CSD87384M has the ability to utilize the PGND planes as the primary thermal path. As such, the use of
thermal vias is an effective way to pull away heat from the device and into the system board. Concerns of solder
voids and manufacturability problems can be addressed by the use of three basic tactics to minimize the amount
of solder attach that wicks down the via barrel:
• Intentionally space out the vias from each other to avoid a cluster of holes in a given area.
• Use the smallest drill size allowed in your design. The example in Figure 29 uses vias with a 10 mil drill hole
and a 16 mil capture pad.
• Tent the opposite side of the via with solder-mask.
The number and drill size of the thermal vias should align with the end user’s PCB design rules and
manufacturing capabilities.
7.2 Layout Example
Figure 29. Recommended PCB Layout (Top Down View)
(1)
Keong W. Kam, David Pommerenke, “EMI Analysis Methods for Synchronous Buck Converter EMI Root Cause Analysis”, University of
Missouri – Rolla
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8 Device and Documentation Support
8.1 Trademarks
NexFET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
8.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
8.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation
9.1 CSD87384M Package Dimensions
Pin Configuration
Copyright © 2013–2015, Texas Instruments Incorporated
Position
Designation
Pin 1
TG
Pin 2
VIN
Pin 3
PGND
Pin 4
BG
Pin 5
VSW
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2.500 REF PKG
1.504
2.005
2.500 REF PKG
9.2 Land Pattern Recommendation
1.750 REF PKG
1.750
1.208
1.208
2
3
5
0.000
0.588
0.888
1.208
1
0.588
0.888
1.208
4
0.822
1.122
1.442
1.560
2.000
0.696
1.915
1.595
PACKAGE
OUTLINE
0.000
1.750 REF PKG
2.500 REF PKG
Solder Mask
Opening
1.331
1.932
1.578
2.500 REF PKG
9.3 Stencil Recommendation (100 µm)
1.750 REF PKG
1.356
0.955
0.947
0.000
0.327
0.317
0.517
0.937
1.163
1.356
0.935
0.955
1.161
2.450
2.056
1.169
1.395
0.000
0.332
0.532
0.693
0.467
PACKAGE
OUTLINE
1.868
1.642
1.750 REF PKG
Text For Spacing
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2.500 REF PKG
Solder Mask
Opening
1.436
1.560
1.950
2.500 REF PKG
9.4 Stencil Recommendation (125 µm)
1.750 REF PKG
1.452
1.070
1.012
0.000
0.337
0.587
0.913
1.070
1.183
1.452
0.392
0.913
1.183
2.457
2.043
1.147
1.417
0.000
0.307
0.557
0.707
0.572
PACKAGE
OUTLINE
1.890
1.620
1.750 REF PKG
Text
For
Spacing
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
9.5 Pin Drawing
87384M
TI YMS
LLLL E
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9.6 CSD87384M Embossed Carrier Tape Dimensions
(1)
Pin 1 is oriented in the top-left quadrant of the tape enclosure (closest to the carrier tape sprocket holes).
spacer
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD87384M
ACTIVE
PTAB
MPB
5
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 150
87384M
CSD87384MT
ACTIVE
PTAB
MPB
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 150
87384M
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
