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CSD95372BQ5M
SLPS499B – MARCH 2014 – REVISED MARCH 2016
CSD95372BQ5M Synchronous Buck NexFET™ Smart Power Stage
1 Features
2 Applications
•
•
•
•
•
•
•
1
•
•
•
•
•
•
•
•
•
•
•
60 A Continuous Operating Current Capability
93.4% System Efficiency at 30 A
Low Power Loss of 2.8 W at 30 A
High-Frequency Operation (up to 1.25 MHz)
Diode Emulation Mode With FCCM
Temperature Compensated Bi-Directional Current
Sense
Analog Temperature Output (600 mV at 0°C)
Fault Monitoring
– High-Side Short, Overcurrent, and
Overtemperature Protection
3.3 and 5-V PWM Signal Compatible
Tri-State PWM Input
Integrated Bootstrap Diode
Optimized Deadtime for Shoot Through Protection
High-Density SON 5 × 6 mm Footprint
Ultra-Low Inductance Package
System Optimized PCB Footprint
RoHS Compliant – Lead-Free Terminal Plating
Halogen Free
Multiphase Synchronous Buck Converters
– High-Frequency Applications
– High-Current, Low-Duty Cycle Applications
POL DC-DC Converters
Memory and Graphic Cards
Desktop and Server VR11.x / VR12.x V-Core and
Memory Synchronous Converters
•
•
•
3 Description
The CSD95372BQ5M NexFET™ smart power stage
is a highly optimized design for use in a high-power,
high-density Synchronous Buck converter. This
product integrates the Driver IC and Power
MOSFETs to complete the power stage switching
function. This combination produces high-current,
high-efficiency, and high-speed switching capability in
a small 5-mm × 6-mm outline package. It also
integrates the accurate current sensing and
temperature sensing functionality to simplify system
design and improve accuracy. In addition, the PCB
footprint has been optimized to help reduce design
time and simplify the completion of the overall system
design.
Device Information(1)
Device
Media
Qty
Package
Ship
CSD95372BQ5M
13-Inch Reel
2500
CSD95372BQ5MT
7-Inch Reel
250
SON
5 mm × 6 mm
Package
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
SPACER
Application Diagram
Typical Power Stage Efficiency and Power Loss
VIN
100
14
90
12
80
10
VCC
VOUT
60
30
+Is2
-Is2
PWM2
RT
6
4
2
40
TSEN
SS
8
VDD = 5V
VIN = 12V
VOUT = 1.2V
LOUT = .225µH
fSW = 500kHz
TA = 25ºC
50
PWM1
+Is1
-Is2
VOUT
70
Power Loss (W)
VOUT
VCC
Efficiency (%)
CSD95372B
0
10
20
30
40
Output Current (A)
50
60
0
G001
PGND
Multiphase
Controller
CSD95372B
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD95372BQ5M
SLPS499B – MARCH 2014 – REVISED MARCH 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
4
4
4
4
Absolute Maximum Ratings ......................................
Handling Ratings.......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
7
8
Application Schematic .......................................... 5
Device and Documentation Support.................... 6
8.1 Trademarks ............................................................... 6
8.2 Electrostatic Discharge Caution ................................ 6
8.3 Glossary .................................................................... 6
9
Mechanical, Packaging, and Orderable
Information ............................................................. 7
9.1 Mechanical Drawing.................................................. 7
9.2 Recommended PCB Land Pattern............................ 8
9.3 Recommended Stencil Opening ............................... 8
4 Revision History
Changes from Revision A (June 2014) to Revision B
•
Page
Changed application schematic to show IOUT (not IMON) for each CSD95372B device. ........................................................ 5
Changes from Original (March 2014) to Revision A
Page
•
Removed "input voltage up to 14.5 V" and "DualCool™ package" bullets from the Features .............................................. 1
•
Fixed TAO/FAULT pin function to state that TAO will be pulled up to 3.3 V in the event of thermal shutdown ................... 3
•
Added minimum ESD Ratings ............................................................................................................................................... 4
•
Increased maximum input voltage to 16 V ............................................................................................................................ 4
•
Added table note for max input voltage ................................................................................................................................. 4
2
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SLPS499B – MARCH 2014 – REVISED MARCH 2016
5 Pin Configuration and Functions
Top View
IOUT
1
12
PWM
REFIN
2
11
TAO/FAULT
ENABLE
3
10
FCCM
PGND
4
9
BOOT
VDD
5
8
BOOT_R
VSW
6
7
VIN
13
PGND
Pin Functions
PIN
NAME
DESCRIPTION
NUMBER
BOOT
9
Bootstrap capacitor connection. Connect a minimum of 0.1 µF 16 V X7R ceramic capacitor from BOOT to BOOT_R
pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is integrated.
BOOT_R
8
Return path for HS gate driver, connected to VSW internally.
ENABLE
3
Enables device operation. If ENABLE = logic HIGH, turns on device. If ENABLE = logic LOW, the device is turned
off and both MOSFET gates are actively pulled low. An internal 100-kΩ pulldown resistor will pull the ENABLE pin
LOW if left floating.
FCCM
10
This pin enables the Diode Emulation function. When this pin is held LOW, Diode Emulation Mode is enabled for
sync FET. When FCCM is HIGH, the device is operated in Forced Continuous Conduction Mode. An internal 5 µA
current source will pull the FCCM pin to 3.3 V if left floating.
IOUT
1
Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current.
PGND
4
Power ground, connected directly to pin 13.
PGND
13
Power ground
PWM
12
Pulse width modulated 3-state input from external controller. Logic LOW sets control FET gate low and sync FET
gate high. Logic HIGH sets control FET gate high and sync FET gate low. Open or High Z sets both MOSFET
gates low if greater than the 3-state shutdown hold-off time (t3HT).
REFIN
2
External reference voltage input for current sensing amplifier
TAO/
FAULT
11
Temperature Analog Output. Reports a voltage proportional to the die temperature. An ORing diode is integrated in
the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the IC's. Only
the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown occurs. TAO should be
bypassed to PGND with a 1-nF 16-V X7R ceramic capacitor.
VDD
5
Supply voltage to gate driver and internal circuitry
VIN
7
Input voltage pin. Connect input capacitors close to this pin.
VSW
6
Phase node connecting the HS MOSFET source and LS MOSFET drain – pin connection to the output inductor.
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SLPS499B – MARCH 2014 – REVISED MARCH 2016
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6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted) (1)
MIN
MAX
VIN to PGND
–0.3
25
V
VIN to VSW
–0.3
25
V
–7
27
V
–0.3
20
V
VIN to VSW (10 ns)
VSW to PGND
VSW to PGND (10 ns)
UNIT
–7
23
V
VDD to PGND
–0.3
7
V
ENABLE, PWM, FCCM. TAO, IOUT, REFIN to PGND
–0.3
VDD + 0.3 V
V
–0.3
VDD + 0.3 V
V
12
W
150
°C
BOOT to BOOT_R
(2)
PD, power dissipation
TJ, operating junction
(1)
–55
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
Should not exceed 7 V
(2)
6.2 Handling Ratings
Tstg
Storage temperature range
V(ESD)
Electrostatic discharge
Human body model (HBM)
Charged device model (CDM)
MIN
MAX
UNIT
–55
150
°C
–2000
2000
V
–500
500
V
6.3 Recommended Operating Conditions
TA = 25° (unless otherwise noted)
MIN
MAX
4.5
5.5
V
Input supply voltage (1)
16
V
VOUT
Output voltage
5.5
V
IOUT
Continuous output current
IOUT-PK
Peak output current (3)
VIN = 12 V, VDD = 5 V, VOUT = 1.2 V,
ƒSW = 500 kHz, LOUT = 0.225 µH (2)
ƒSW
Switching frequency
CBST = 0.1 µF (min)
On-time duty cycle
ƒSW = 1 MHz
VDD
Gate drive voltage
VIN
(1)
(2)
(3)
UNIT
60
90
A
1250
kHz
85
Minimum PWM on-time
40
Operating temperature
–40
%
ns
125
°C
Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For
reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
System conditions as defined in Note 1. Peak output current is applied for tp = 50 µs.
6.4 Thermal Information
TA = 25°C (unless otherwise noted)
MAX
UNIT
RθJC
Junction-to-case thermal resistance (top of package) (1)
THERMAL METRIC
15
°C/W
RθJB
Junction-to-board thermal resistance (2)
1.5
°C/W
(1)
(2)
4
MIN
TYP
RθJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz (0.071 mm thick) Cu pad on a 1.5 inches x 1.5 inches, 0.06
inch (1.52 mm) thick FR4 board.
RθJB value based on hottest board temperature within 1 mm of the package.
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CSD95372BQ5M
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SLPS499B – MARCH 2014 – REVISED MARCH 2016
7 Application Schematic
12V
VIN
TPS53661
PWM1
SKIP#-RAMP
VSP
VSN
BOOT
BOOT_R
TAO/FAULT
PWM
CSD95372B
FCCM
PGND
VDD
5V
ENABLE
PGND
VCORE_OUT
VSW
Load
IOUT REFIN
OCP-I
CSP1
COMP
TSEN
12V
VREF
VIN
F-IMAX
PWM2
BOOT
BOOT_R
TAO/FAULT
PWM
CSD95372B
FCCM
B-TMAX
VSW
PGND
VDD
5V
ENABLE
PGND
IOUT REFIN
CSP2
O-USR
12V
VIN
ADDR
PWM3
BOOT
BOOT_R
TAO/FAULT
PWM
CSD95372B
FCCM
ENABLE
SLEW-MODE
VSW
PGND
VDD
5V
PGND
IOUT REFIN
CSP3
12V
ISUM
IMON
IMON
VIN
PWM4
BOOT
CSD95372B
FCCM
^
I2C or
PMBus
(Optional)
^
ENABLE
VR_FAULT#
ENABLE
SCLK
VSW
PGND
VDD
5V
To/From
CPU
BOOT_R
TAO/FAULT
PWM
PGND
IOUT REFIN
ALERT#
CSP4
SDIO
VR_RDY
12V
VR_HOT#
PMB_CLK
VIN
PMB_ALERT#
PWM5
BOOT
CSD95372B
FCCM
PMB_DIO
VSW
PGND
VDD
5V
ENABLE
BOOT_R
TAO/FAULT
PWM
ENABLE
VR_FAULT#
PGND
IOUT REFIN
CSP5
12V
V12
5V
V5
12V
VIN
PWM6
BOOT
FCCM
5V
3.3V
CSD95372B
VSW
PGND
VDD
ENABLE
V3R3
BOOT_R
TAO/FAULT
PWM
PGND
IOUT REFIN
CSP6
GND
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SLPS499B – MARCH 2014 – REVISED MARCH 2016
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8 Device and Documentation Support
8.1 Trademarks
NexFET, DualCool are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
8.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
8.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
6
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Product Folder Links: CSD95372BQ5M
CSD95372BQ5M
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SLPS499B – MARCH 2014 – REVISED MARCH 2016
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
9.1 Mechanical Drawing
Exposed tie clip may vary
c2
A
E1
E2
c1
!
K
d2
d1
L1
b3
b1
b2
E
D2
b
e
a1
DIM
0.300 x 45°
MILLIMETERS
L
d
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
A
1.400
1.450
1.500
0.057
0.059
0.061
a1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.200
0.250
0.320
0.008
0.010
0.013
b1
b2
2.750 TYP
0.200
b3
0.250
0.108 TYP
0.320
0.008
0.250 TYP
0.010
0.013
0.010 TYP
c1
0.150
0.200
0.250
0.006
0.008
0.010
c2
0.200
0.250
0.300
0.008
0.010
0.012
D2
5.300
5.400
5.500
0.209
0.213
0.217
d
0.200
0.250
0.300
0.008
0.010
0.012
d1
0.350
0.400
0.450
0.014
0.016
0.018
d2
1.900
2.000
2.100
0.075
0.079
0.083
E
5.900
6.000
6.100
0.232
0.236
0.240
E1
4.900
5.000
5.100
0.193
0.197
0.201
E2
3.200
3.300
3.400
0.126
0.130
0.134
e
0.500 TYP
K
0.350 TYP
0.020 TYP
0.014 TYP
L
0.400
0.500
0.600
0.016
0.020
0.024
L1
0.210
0.310
0.410
0.008
0.012
0.016
θ
0.00
—
—
0.00
—
—
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SLPS499B – MARCH 2014 – REVISED MARCH 2016
www.ti.com
9.2 Recommended PCB Land Pattern
0.331(0.013)
0.370 (0.015)
0.410 (0.016)
1.000 (0.039)
0.550 (0.022)
0.300 (0.012)
2.800
(0.110)
5.300
(0.209)
6.300
(0.248)
0.500
(0.020)
5.639
(0.222)
0.300
(0.012)
R0.127 (R0.005)
3.400
(0.134)
5.900
(0.232)
1. Dimensions are in mm (inches).
9.3 Recommended Stencil Opening
0.350(0.014)
2.750
(0.108)
0.250
(0.010)
1. Dimensions are in mm (inches).
2. Stencil thickness is 100 µm.
8
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD95372BQ5M
ACTIVE
LSON-CLIP
DQP
12
2500
RoHS-Exempt
& Green
NIPDAU | SN
Level-2-260C-1 YEAR
-55 to 150
95372BM
CSD95372BQ5MT
ACTIVE
LSON-CLIP
DQP
12
250
RoHS-Exempt
& Green
NIPDAU | SN
Level-2-260C-1 YEAR
-55 to 150
95372BM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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