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CSD95378BQ5M
SLPS504B – APRIL 2014 – REVISED JULY 2017
CSD95378BQ5M Synchronous Buck NexFET™ Smart Power Stage
1 Features
2 Applications
•
•
•
•
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•
•
1
•
•
•
•
•
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60-A Continuous Operating Current Capability
93.4% System Efficiency at 30 A
Low-Power Loss of 2.8 W at 30 A
High-Frequency Operation (up to 1.25 MHz)
Diode Emulation Mode With FCCM
Temperature Compensated Bi-Directional Current
Sense
Analog Temperature Output (400 mV at 0°C)
Fault Monitoring
– High-Side Short, Overcurrent, and
Overtemperature Protection
3.3-V and 5-V PWM Signal Compatible
Tri-State PWM Input
Integrated Bootstrap Diode
Optimized Dead Time for Shoot-Through
Protection
High-Density SON 5-mm × 6-mm Footprint
Ultra-Low-Inductance Package
System Optimized PCB Footprint
RoHS Compliant – Lead-Free Terminal Plating
Halogen Free
Multiphase Synchronous Buck Converters
– High-Frequency Applications
– High-Current, Low-Duty-Cycle Applications
POL DC-DC Converters
Memory and Graphic Cards
Desktop and Server VR11.x / VR12.x V-core and
Memory Synchronous Converters
•
•
•
3 Description
The CSD95378BQ5M NexFET™ smart power stage
is a highly optimized design for use in a high-power,
high-density synchronous buck converter. This
product integrates the driver IC and power MOSFETs
to complete the power stage switching function. This
combination produces high-current, high-efficiency,
and high speed switching capability in a small
5-mm × 6-mm outline package. It also integrates the
accurate current sensing and temperature sensing
functionality to simplify system design and improve
accuracy. In addition, the PCB footprint is optimized
to help reduce design time and simplify the
completion of the overall system design.
Device Information(1)
DEVICE
MEDIA
QTY
PACKAGE
SHIP
CSD95378BQ5M
13-Inch Reel
2500
CSD95378BQ5MT
7-Inch Reel
250
SON
5.00-mm × 6.00-mm
Package
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Application Diagram
Typical Power Stage Efficiency and Power Loss
VIN
100
14
90
12
80
10
VCC
VOUT
60
30
+Is2
-Is2
PWM2
RT
6
4
2
40
TSEN
SS
8
VDD = 5V
VIN = 12V
VOUT = 1.2V
LOUT = .225µH
fSW = 500kHz
TA = 25ºC
50
PWM1
+Is1
-Is2
VOUT
70
Power Loss (W)
VOUT
VCC
Efficiency (%)
CSD95378B
0
10
20
30
40
Output Current (A)
50
60
0
G001
PGND
Multiphase
Controller
CSD95378B
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD95378BQ5M
SLPS504B – APRIL 2014 – REVISED JULY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
4
4
4
4
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Application Schematic .......................................... 5
7.1 Typical Application .................................................... 5
8
Device and Documentation Support.................... 6
8.1
8.2
8.3
8.4
8.5
9
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
6
6
6
6
6
Mechanical, Packaging, and Orderable
Information ............................................................. 7
9.1 Mechanical Drawing.................................................. 7
9.2 Recommended PCB Land Pattern............................ 8
9.3 Recommended Stencil Opening ............................... 8
4 Revision History
Changes from Revision A (July 2014) to Revision B
Page
•
Updated the CSD95378B parts in the Application Schematic................................................................................................ 5
•
Added the Receiving Notification of Documentation Updates and Community Resources sections in Device and
Documentation Support .......................................................................................................................................................... 6
Changes from Original (April 2014) to Revision A
•
2
Page
Updated the controller IC in the Application Schematic to the TPS40428 ............................................................................. 5
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SLPS504B – APRIL 2014 – REVISED JULY 2017
5 Pin Configuration and Functions
13-Pin SON
Top View
IOUT
1
12
PWM
REFIN
2
11
TAO/FAULT
ENABLE
3
10
FCCM
PGND
4
9
BOOT
VDD
5
8
BOOT_R
VSW
6
7
VIN
13
PGND
Pin Functions
PIN
DESCRIPTION
NAME
NO.
BOOT
9
Bootstrap capacitor connection. Connect a minimum of 0.1-µF, 16-V, X7R ceramic capacitor from BOOT to
BOOT_R pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is
integrated.
BOOT_R
8
Return path for HS gate driver, connected to VSW internally.
ENABLE
3
Enables device operation. If ENABLE = logic HIGH, turns on device. If ENABLE = logic LOW, the device is
turned off and both MOSFET gates are actively pulled low. An internal 100-kΩ pulldown resistor will pull the
ENABLE pin LOW if left floating.
FCCM
10
This pin enables the Diode Emulation function. When this pin is held LOW, Diode Emulation Mode is enabled for
sync FET. When FCCM is HIGH, the device is operated in Forced Continuous Conduction Mode. An internal 5µA current source will pull the FCCM pin to 3.3 V if left floating.
IOUT
1
Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current.
PGND
4
Power ground, connected directly to pin 13.
PGND
13
Power ground.
PWM
12
Pulse width modulated tri-state input from external controller. Logic LOW sets control FET gate low and sync
FET gate high. Logic HIGH sets control FET gate high and sync FET gate low. Open or Hi-Z sets both MOSFET
gates low if greater than the tri-state shutdown hold-off time (t3HT).
REFIN
2
External reference voltage input for current sensing amplifier.
TAO/
FAULT
11
Temperature analog output. Reports a voltage proportional to the die temperature. An ORing diode is integrated
in the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the ICs.
Only the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown occurs. TAO
should be bypassed to PGND with a 1-nF, 16-V, X7R ceramic capacitor.
VDD
5
Supply voltage to gate driver and internal circuitry.
VIN
7
Input voltage pin. Connect input capacitors close to this pin.
VSW
6
Phase node connecting the HS MOSFET source and LS MOSFET drain - pin connection to the output inductor.
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SLPS504B – APRIL 2014 – REVISED JULY 2017
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6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted) (1)
MIN
MAX
VIN to PGND
–0.3
25
V
VIN to VSW
–0.3
25
V
–7
27
V
–0.3
20
V
VIN to VSW (10 ns)
VSW to PGND
VSW to PGND (10 ns)
UNIT
–7
23
V
VDD to PGND
–0.3
7
V
ENABLE, PWM, FCCM. TAO, IOUT, REFIN to PGND
–0.3
VDD + 0.3 V
V
–0.3
VDD + 0.3 V
V
12
W
BOOT to BOOT_R
(2)
Power dissipation, PD
Operating junction temperature, TJ
–55
150
°C
Storage temperature, Tstg
–55
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Should not exceed 7 V.
6.2 ESD Ratings
V(ESD)
Electrostatic discharge
MIN
MAX
Human-body model (HBM)
–2000
2000
Charged-device model (CDM)
–500
500
UNIT
V
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
MAX
4.5
5.5
V
Input supply voltage (1)
16
V
VOUT
Output voltage
5.5
V
IOUT
Continuous output current
IOUT-PK
Peak output current (3)
VIN = 12 V, VDD = 5 V, VOUT = 1.2 V,
ƒSW = 500 kHz, LOUT = 0.225 µH (2)
ƒSW
Switching frequency
CBST = 0.1 µF (min)
On-time duty cycle
ƒSW = 1 MHz
VDD
Gate drive voltage
VIN
(1)
(2)
(3)
UNIT
60
90
A
1250
kHz
85%
Minimum PWM on time
40
Operating temperature
–40
ns
125
°C
Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For
reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
System conditions as defined in Note 1. Peak output current is applied for tp = 50 µs.
6.4 Thermal Information
TA = 25°C (unless otherwise noted)
THERMAL METRIC
MIN
TYP
MAX
RθJC
Junction-to-case (top-of-package) thermal resistance (1)
15
RθJB
Junction-to-board thermal resistance (2)
1.5
(1)
(2)
4
UNIT
°C/W
RθJC is determined with the device mounted on a 1-in2 (6.45 -cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in, 0.06-in (1.52-mm)
thick FR4 board.
RθJB value based on hottest board temperature within 1 mm of the package.
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SLPS504B – APRIL 2014 – REVISED JULY 2017
7 Application Schematic
7.1 Typical Application
12V
VDD
BP3
BP5
VIN
PWM
PWM2
BOOT
CSD95378B
FCCM
TPS40428
FLT2
FLT1
ISH1
ISH2
ISH1
VSNS1
GSNS1
CS2N
DIFFO1
ENABLE
VOUT
LOAD
PGND IOUT REFIN
CS2P
FB2
FB2
COMP2
BP5
COMP1
PG2
PG2
CNTL2
12V
FB1
COMP1
VSW
PGND
VDD
5V
FLT1
BOOT_R
TAO/FAULT
VIN
PWM1
RT
PG1
CNTL1
BOOT
PWM
FCCM
5V
VDD
ENABLE
BOOT_R
TAO/FAULT
CSD95378B
VSW
PGND
PGND IOUT REFIN
SYNC
PHSET
CS1P
CS1N
VSNS2
GSNS2
PMBDATA
PMBCLK
PMBUS I/F
SMBALERT
ADDR0
ADDR1
AGND
TSNS1
SVID1
TSNS2
AVSDATA1
AVSCLK1
VIO
High-Speed
AVSBUS
Copyright © 2017, Texas Instruments Incorporated
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SLPS504B – APRIL 2014 – REVISED JULY 2017
www.ti.com
8 Device and Documentation Support
8.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
8.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
8.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
8.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
8.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
6
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CSD95378BQ5M
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SLPS504B – APRIL 2014 – REVISED JULY 2017
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
9.1 Mechanical Drawing
Exposed tie clip may vary
c2
A
E1
E2
c1
!
K
d2
d1
L1
b3
b1
b2
E
D2
b
e
a1
DIM
0.300 x 45°
L
d
MILLIMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
A
1.400
1.450
1.500
0.057
0.059
0.061
a1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.200
0.250
0.320
0.008
0.010
0.013
b1
b2
2.750 TYP
0.200
b3
0.250
0.108 TYP
0.320
0.008
0.250 TYP
0.010
0.013
0.010 TYP
c1
0.150
0.200
0.250
0.006
0.008
0.010
c2
0.200
0.250
0.300
0.008
0.010
0.012
D2
5.300
5.400
5.500
0.209
0.213
0.217
d
0.200
0.250
0.300
0.008
0.010
0.012
d1
0.350
0.400
0.450
0.014
0.016
0.018
d2
1.900
2.000
2.100
0.075
0.079
0.083
E
5.900
6.000
6.100
0.232
0.236
0.240
E1
4.900
5.000
5.100
0.193
0.197
0.201
E2
3.200
3.300
3.400
0.126
0.130
0.134
e
0.500 TYP
K
0.350 TYP
0.020 TYP
0.014 TYP
L
0.400
0.500
0.600
0.016
0.020
0.024
L1
0.210
0.310
0.410
0.008
0.012
0.016
θ
0.00
—
—
0.00
—
—
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SLPS504B – APRIL 2014 – REVISED JULY 2017
www.ti.com
9.2 Recommended PCB Land Pattern
0.331(0.013)
0.370 (0.015)
0.410 (0.016)
1.000 (0.039)
0.550 (0.022)
0.300 (0.012)
2.800
(0.110)
5.300
(0.209)
6.300
(0.248)
0.500
(0.020)
5.639
(0.222)
0.300
(0.012)
R0.127 (R0.005)
3.400
(0.134)
5.900
(0.232)
1. Dimensions are in mm (in).
9.3 Recommended Stencil Opening
0.350(0.014)
2.750
(0.108)
0.250
(0.010)
1. Dimensions are in mm (in).
2. Stencil thickness is 100 µm.
8
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD95378BQ5M
ACTIVE
LSON-CLIP
DQP
12
2500
RoHS-Exempt
& Green
NIPDAU | SN
Level-2-260C-1 YEAR
-55 to 150
95378BM
CSD95378BQ5MT
ACTIVE
LSON-CLIP
DQP
12
250
RoHS-Exempt
& Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 150
95378BM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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