DLP5530S-Q1
DLPS200B – JULY 2020 – REVISED APRIL 2021
DLP5530S-Q1 0.55-Inch 1.3-Megapixel DMD for Automotive Interior Display
1 Features
3 Description
•
The DLP5530S-Q1 automotive DMD, combined with
the DLPC230S-Q1 DMD controller and TPS99000SQ1 system management and illumination controller,
provides the capability to achieve a high performance
augmented reality HUD. The 2:1 aspect ratio supports
very wide aspect ratio designs, and the 1.3-MP
resolution enables retinal limited displays to be
achieved in HUD applications. The DLP5530S-Q1
has more than 3 times the optical throughput of the
preceding DLP3030-Q1 automotive DMD enabling
wider field of view and larger driver eye box for
enhanced user experience. This chipset, coupled
with LEDs and an optical system, enables deep
saturated colors of 125% NTSC, extremely high
brightness of more than 15,000 cd/m2, high dynamic
dimming ratio more than 5000:1, and high solar
load tolerance. The DLP5530S-Q1 automotive DMD
micromirror array is configured for bottom illumination
which enables highly efficient and more compact
optical engine designs. The S450 package has low
thermal resistance to the DMD array to enable more
efficient thermal solutions.
•
•
•
•
•
•
Qualified for automotive applications
– –40°C to 105°C operating DMD array
temperature range
Functional Safety Quality-Managed
– Documentation available to aid ISO 26262
functional safety system design up to ASIL-B
The DLP5530S-Q1 automotive chipset includes:
– DLP5530S-Q1 DMD
– DLPC230S-Q1
– TPS99000S-Q1 system management and
illumination controller
0.55-inch diagonal micromirror array
– 7.6-μm micromirror pitch
– ±12° micromirror tilt angle (relative to flat state)
– Bottom illumination for optimal efficiency and
optical engine size
– Supports 1152 × 576 input resolution
– Up to 2304 x 1152 resolution with external GPU
based diamond pre-processing
– Compatible with LED or laser illumination
600-MHz sub-LVDS DMD interface for low power
and emission
10-kHz DMD refresh rate over temperature
extremes
Built-in self test of DMD memory cells
Device Information
PART NUMBER
DLP5530S-Q1
2 Applications
(1)
•
(2)
•
Wide field of view and augmented reality head-up
display (HUD)
Digital cluster, navigation, and infotainment
windshield displays
Voltage
Monitor and
Enables
Power
Regulation
PACKAGE(1) (2)
FYS (149)
BODY SIZE (NOM)
22.30 mm × 32.20 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
This data sheet pertains to the specifications and application
of this DMD in the head-up display application. Please
see the DLP5531A-Q1 data sheet (DLPS075) for headlight
specifications and application information.
TPS99000S-Q1
1.1V
1.8V
3.3V
6.5V
LED dimming
SPI
DLPC230S-Q1
ARM®
Cortex®-R4F
DMD power
management
VRESET
DLP5530S-Q1
SubLVDS
DMD video
processing &
control
Video
memory
VOFFSET
VBIAS
Video
LED
ENABLE
System
diagnostics
SPI
TMP411
Temperature
Sensor
I2C
SPI
0.55" DMD
2:1 aspect ratio
1.3M pixels
Flash
DLP5530S-Q1 DLP® Chipset System Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DLP5530S-Q1
www.ti.com
DLPS200B – JULY 2020 – REVISED APRIL 2021
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 8
6.1 Absolute Maximum Ratings ....................................... 8
6.2 Storage Conditions .................................................... 8
6.3 ESD Ratings .............................................................. 8
6.4 Recommended Operating Conditions ........................9
Illumination Overfill Diagram............................................. 9
6.5 Thermal Information .................................................10
6.6 Electrical Characteristics ..........................................10
6.7 Timing Requirements ............................................... 11
Electrical and Timing Diagrams.......................................11
6.8 Switching Characteristics .........................................14
LPSDR and Test Load Circuit Diagrams.........................14
6.9 System Mounting Interface Loads ........................... 15
System Interface Loads Diagram....................................15
6.10 Physical Characteristics of the Micromirror Array .. 15
Array Physical Characteristics Diagram..........................16
6.11 Micromirror Array Optical Characteristics .............. 17
6.12 Window Characteristics ......................................... 17
6.13 Chipset Component Usage Specification............... 17
7 Detailed Description......................................................18
7.1 Overview................................................................... 18
7.2 Functional Block Diagram......................................... 18
7.3 Feature Description...................................................19
7.4 System Optical Considerations.................................20
7.5 DMD Image Performance Specification....................22
7.6 Micromirror Array Temperature Calculation.............. 22
7.7 Micromirror Landed-On/Landed-Off Duty Cycle....... 24
8 Application and Implementation.................................. 25
8.1 Application Information............................................. 25
8.2 Typical Application.................................................... 25
9 Power Supply Recommendations................................28
9.1 Power Supply Power-Up Procedure......................... 28
9.2 Power Supply Power-Down Procedure.....................28
9.3 Power Supply Sequencing Requirements................ 29
10 Layout...........................................................................30
10.1 Layout Guidelines................................................... 30
11 Device and Documentation Support..........................31
11.1 Device Support........................................................31
11.2 Receiving Notification of Documentation Updates.. 31
11.3 Support Resources................................................. 31
11.4 Trademarks............................................................. 31
11.5 Electrostatic Discharge Caution.............................. 32
11.6 DMD Handling.........................................................32
11.7 Glossary.................................................................. 32
12 Mechanical, Packaging, and Orderable
Information.................................................................... 32
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (October 2020) to Revision B (April 2021)
Page
• Updated Current and Power Consumption in Electrical Characteristics section................................................ 8
Changes from Revision * (August 2020) to Revision A (October 2020)
Page
• Changed device status from Advance Information to Production Data.............................................................. 1
2
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DLPS200B – JULY 2020 – REVISED APRIL 2021
5 Pin Configuration and Functions
Figure 5-1. FYS Package
149-Pin CPGA
Bottom View
Pin Functions - Connector Pins
PIN
NAME
NO.
TYPE
SIGNAL
DATA RATE
DESCRIPTION
DATA INPUTS
D_AN(0)
L2
I
SubLVDS
Double
Data, Negative
D_AN(1)
K2
I
SubLVDS
Double
Data, Negative
D_AN(2)
J2
I
SubLVDS
Double
Data, Negative
D_AN(3)
H2
I
SubLVDS
Double
Data, Negative
D_AN(4)
F2
I
SubLVDS
Double
Data, Negative
D_AN(5)
E2
I
SubLVDS
Double
Data, Negative
D_AN(6)
D2
I
SubLVDS
Double
Data, Negative
D_AN(7)
C2
I
SubLVDS
Double
Data, Negative
D_AP(0)
L1
I
SubLVDS
Double
Data, Positive
D_AP(1)
K1
I
SubLVDS
Double
Data, Positive
D_AP(2)
J1
I
SubLVDS
Double
Data, Positive
D_AP(3)
H1
I
SubLVDS
Double
Data, Positive
D_AP(4)
F1
I
SubLVDS
Double
Data, Positive
D_AP(5)
E1
I
SubLVDS
Double
Data, Positive
D_AP(6)
D1
I
SubLVDS
Double
Data, Positive
D_AP(7)
C1
I
SubLVDS
Double
Data, Positive
D_BN(0)
K19
I
SubLVDS
Double
Data, Negative
D_BN(1)
J19
I
SubLVDS
Double
Data, Negative
D_BN(2)
H19
I
SubLVDS
Double
Data, Negative
D_BN(3)
G19
I
SubLVDS
Double
Data, Negative
D_BN(4)
E19
I
SubLVDS
Double
Data, Negative
D_BN(5)
D19
I
SubLVDS
Double
Data, Negative
D_BN(6)
C19
I
SubLVDS
Double
Data, Negative
D_BN(7)
B19
I
SubLVDS
Double
Data, Negative
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Pin Functions - Connector Pins (continued)
PIN
TYPE
SIGNAL
DATA RATE
K20
I
SubLVDS
Double
Data, Positive
J20
I
SubLVDS
Double
Data, Positive
D_BP(2)
H20
I
SubLVDS
Double
Data, Positive
D_BP(3)
G20
I
SubLVDS
Double
Data, Positive
D_BP(4)
E20
I
SubLVDS
Double
Data, Positive
D_BP(5)
D20
I
SubLVDS
Double
Data, Positive
D_BP(6)
C20
I
SubLVDS
Double
Data, Positive
D_BP(7)
B20
I
SubLVDS
Double
Data, Positive
DCLK_AN
G2
I
SubLVDS
Double
Clock, Negative
DCLK_AP
G1
I
SubLVDS
Double
Clock, Positive
DCLK_BN
F19
I
SubLVDS
Double
Clock, Negative
DCLK_BP
F20
I
SubLVDS
Double
Clock, Positive
LS_CLKN
R3
I
SubLVDS
Single
Clock for Low Speed Interface, Negative
LS_CLKP
T3
I
SubLVDS
Single
Clock for Low Speed Interface, Positive
LS_WDATAN
R2
I
SubLVDS
Single
Write Data for Low Speed Interface, Negative
LS_WDATAP
T2
I
SubLVDS
Single
Write Data for Low Speed Interface, Positive
DMD_DEN_ARSTZ
T10
I
LPSDR
LS_RDATA_A
T5
O
LPSDR
Single
Read Data for Low Speed Interface
LS_RDATA_B
T6
O
LPSDR
Single
Read Data for Low Speed Interface
NAME
NO.
D_BP(0)
D_BP(1)
DESCRIPTION
CONTROL INPUTS
Asynchronous Reset Active Low. Logic High
Enables DMD.
TEMPERATURE SENSE DIODE
TEMP_N
P1
O
TEMP_P
N1
I
VCCH
A8
Ground
VCCH
A9
Ground
VCCH
A10
Ground
VCCH
B8
Ground
VCCH
B9
Ground
VCCH
B10
Ground
VSSH
A11
Ground
VSSH
A12
Ground
VSSH
A13
Ground
VSSH
B11
Ground
VSSH
B12
Ground
VSSH
B13
Ground
Calibrated temperature diode used to assist
accurate temperature measurements of DMD die.
RESERVED PINS
4
Reserved Pin. Connect to Ground.
Reserved Pin. Connect to Ground.
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Pin Functions - Connector Pins (continued)
PIN
NAME
NO.
TYPE
SIGNAL
DATA RATE
DESCRIPTION
POWER
VBIAS
T7
Power
VBIAS
T15
Power
VOFFSET
T9
Power
VOFFSET
T13
Power
VOFFSET
A5
Power
VOFFSET
B5
Power
VOFFSET
A16
Power
VOFFSET
B16
Power
VRESET
T8
Power
VRESET
T14
Power
VDD
R4
Power
VDD
R10
Power
VDD
R11
Power
VDD
R20
Power
VDD
N2
Power
VDD
M20
Power
VDD
L3
Power
VDD
K18
Power
VDD
H3
Power
VDD
G18
Power
VDD
E3
Power
VDD
D18
Power
VDD
C3
Power
VDD
A6
Power
VDD
A18
Power
VDDI
T4
Power
VDDI
R1
Power
VDDI
M3
Power
VDDI
L18
Power
VDDI
J3
Power
VDDI
H18
Power
VDDI
F3
Power
VDDI
E18
Power
VDDI
B3
Power
VDDI
B18
Power
Supply voltage for positive bias level at
micromirrors.
Supply voltage for High Voltage CMOS core
logic. Supply voltage for offset level at
micromirrors.
Supply voltage for negative reset level at
micromirrors.
Supply voltage for Low Voltage CMOS core
logic; for LPSDR inputs; for normal high level at
micromirror address electrodes.
Supply voltage for SubLVDS receivers.
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Pin Functions - Connector Pins (continued)
PIN
NAME
6
NO.
TYPE
VSS
T1
Ground
VSS
T16
Ground
VSS
T19
Ground
VSS
T20
Ground
VSS
R5
Ground
VSS
R6
Ground
VSS
R7
Ground
VSS
R8
Ground
VSS
R9
Ground
VSS
R13
Ground
VSS
R14
Ground
VSS
R15
Ground
VSS
P2
Ground
VSS
P3
Ground
VSS
P20
Ground
VSS
N19
Ground
VSS
N20
Ground
VSS
M1
Ground
VSS
M2
Ground
VSS
L19
Ground
VSS
L20
Ground
VSS
K3
Ground
VSS
J18
Ground
VSS
G3
Ground
VSS
F18
Ground
VSS
D3
Ground
VSS
C18
Ground
VSS
B2
Ground
VSS
B4
Ground
VSS
B15
Ground
VSS
B17
Ground
VSS
A3
Ground
VSS
A4
Ground
VSS
A7
Ground
VSS
A15
Ground
VSS
A17
Ground
VSS
A19
Ground
VSS
A20
Ground
SIGNAL
DATA RATE
DESCRIPTION
Common return. Ground for all power.
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Pin Functions - Test Pads
NUMBER
SYSTEM BOARD
T11
Do not connect
T12
Do not connect
T17
Do not connect
T18
Do not connect
R12
Do not connect
R16
Do not connect
R17
Do not connect
R18
Do not connect
R19
Do not connect
P18
Do not connect
P19
Do not connect
N3
Do not connect
N18
Do not connect
M18
Do not connect
M19
Do not connect
B6
Do not connect
B7
Do not connect
B14
Do not connect
A14
Do not connect
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6 Specifications
6.1 Absolute Maximum Ratings
see (1)
MIN
NOM
MAX
UNIT
SUPPLY VOLTAGE
VDD
Supply voltage for LVCMOS core logic
Supply voltage for LPSDR low speed interface
–0.5
VDDI
Supply voltage for SubLVDS receivers
VOFFSET
Supply voltage for HVCMOS and micromirror electrode
VBIAS
2.3
V
–0.5
2.3
V
–0.5
8.75
V
Supply voltage for micromirror electrode
–0.5
17
V
VRESET
Supply voltage for micromirror electrode
–11
0.5
V
| VDDI–VDD |
Supply voltage delta (absolute value)
0.3
V
| VBIAS–VOFFSET |
Supply voltage delta (absolute value)
8.75
V
| VBIAS–VRESET |
Supply voltage delta (absolute value)
28
V
INPUT VOLTAGE
Input voltage for other inputs LPSDR
–0.5
VDD + 0.5
V
Input voltage for other inputs SubLVDS
–0.5
VDDI + 0.5
V
INPUT PINS
| VID |
SubLVDS input differential voltage (absolute value)
IID
SubLVDS input differential current
810
mV
10
mA
120
μA
37
mW/mm2
105
°C
TEMPERATURE DIODE
ITEMP_DIODE
Max current source into temperature diode
ENVIRONMENTAL
ILLOVERFILL
Illumination overfill maximum heat load in area shown in Figure
6-1
TARRAY
Operating DMD array temperature
(1)
–40
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device is not implied at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure above or below the Recommended Operating Conditions for extended periods may
affect device reliability.
6.2 Storage Conditions
Applicable for the DMD as a component or non-operating in a system.
Tstg
DMD storage temperature
MIN
MAX
UNIT
–40
125
°C
6.3 ESD Ratings
VALUE
V(ESD)
(1)
8
Electrostatic discharge
UNIT
Human body model (HBM), per AEC Q100-002(1)
±2000
Charged device model (CDM), per AEC Q100-011
±750
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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6.4 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
NOM
MAX
UNIT
1.7
1.8
1.95
V
SUPPLY VOLTAGE RANGE
VDD
Supply voltage for LVCMOS core logic
Supply voltage for LPSDR low-speed interface
VDDI
Supply voltage for SubLVDS receivers
1.7
1.8
1.95
V
VOFFSET
Supply voltage for HVCMOS and micromirror electrode
8.25
8.5
8.75
V
VBIAS
Supply voltage for mirror electrode
15.5
16
16.5
V
VRESET
Supply voltage for micromirror electrode
–9.5
–10
–10.5
V
| VDDI–VDD |
Supply voltage delta (absolute value)
0.3
V
| VBIAS–VOFFSET |
Supply voltage delta (absolute value)
8.75
V
ƒmax
Clock frequency for low speed interface LS_CLK
120
MHz
ƒmax
Clock frequency for high speed interface DCLK
600
MHz
CLOCK FREQUENCY
Duty cycle distortion DCLK
44%
56%
SUBLVDS INTERFACE
SubLVDS input differential voltage (absolute value)(2)
| VID |
(2)
150
250
350
mV
VCM
Common mode voltage
700
900
1100
mV
ZLINE
Line differential impedance (PWB/trace)
90
100
110
Ω
ZIN
Internal differential termination resistance(3)
80
100
120
Ω
ENVIRONMENTAL
TARRAY
Operating DMD array temperature(5)
ILLUV
Illumination, wavelength < 395 nm (4)
ILLOVERFILL
Illumination overfill maximum heat load in area shown in Figure 6-1
(1)
(2)
(3)
(4)
(5)
–40
105
2
°C
mW/cm 2
28 mW/mm 2
Recommended Operating Conditions are applicable after the DMD is installed in the final product.
See Figure 6-6 and Figure 6-7
See Figure 6-8
The maximum operation conditions for operating temperature and UV illumination shall not be implemented simultaneously.
Operating profile information for device micromirror landed duty-cycle and temperature may be provided if requested.
Illumination Overfill Diagram
Figure 6-1. Illumination Overfill Diagram
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6.5 Thermal Information
DLP5530A-Q1
THERMAL METRIC
FYS (CPGA)
UNIT
149 PINS
Thermal resistance
(1)
Active area-to-test point 1 (TP1) (1)
1.1
°C/W
The DMD is designed to conduct absorbed and dissipated heat to the back of the package. The cooling system must be capable of
maintaining the package within the temperature range specified in the Recommended Operating Conditions. The total heat load on
the DMD is largely driven by the incident light absorbed by the active area, although other contributions include light energy absorbed
by the window aperture and electrical power dissipation of the array. Optical systems should be designed to minimize the light energy
falling outside the window clear aperture since any additional thermal load in this area can significantly degrade the reliability of the
device.
6.6 Electrical Characteristics
Over operating free-air temperature range (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT
IDD
Supply current: VDD(2)
VDD = 1.95 V
310
mA
IDDI
Supply current: VDDI(2)
VDDI = 1.95 V
55
mA
IOFFSET
Supply current: VOFFSET
VOFFSET = 8.75 V
6
mA
IBIAS
Supply current: VBIAS
VBIAS = 16.5 V
1
mA
IRESET
Supply current: VRESET
VRESET = -10.5 V
-4.5
mA
PDD
Supply power dissipation: VDD(2)
VDD = 1.95 V
604.5
mW
PDDI
Supply power dissipation: VDDI(2)
VDDI = 1.95 V
107.25
mW
POFFSET
Supply power dissipation: VOFFSET
VOFFSET = 8.75 V
52.5
mW
PBIAS
Supply power dissipation: VBIAS
VBIAS = 16.5 V
16.5
mW
PRESET
Supply power dissipation: VRESET
VRESET = -10.5 V
47.25
mW
PTOTAL
Supply power dissipation: Total
828
mW
POWER
LPSDR INPUT (3)
VIH(DC)
DC input high voltage
VIL(DC)
DC input low voltage
VIH(AC)
AC input high voltage
VIL(AC)
AC input low voltage
∆VT
Hysteresis (VT+ – VT–)
See Figure 6-9
IIL
Low–level input current
VDD = 1.95 V; VI = 0 V
IIH
High–level input current
VDD = 1.95 V; VI = 1.95 V
LPSDR OUTPUT
0.7 × VDD
VDD + 0.3
V
–0.3
0.3 × VDD
V
0.8 × VDD
VDD + 0.3
V
–0.3
0.2 × VDD
V
0.1 × VDD
0.4 × VDD
–100
V
nA
300
nA
(4)
VOH
DC output high voltage
IOH = -2mA
VOL
DC output low voltage
IOL = 2mA
0.8 × VDD
0.2 × VDD
V
Input capacitance LPSDR
ƒ = 1 MHz
10
Input capacitance SubLVDS
ƒ = 1 MHz
20
Output capacitance
ƒ = 1 MHz
10
pF
CRESET
Reset group capacitance
ƒ = 1 MHz (1152 X 144
micromirrors)
450
pF
CTEMP
Temperature sense diode capacitance
ƒ = 1 MHz
20
pF
V
CAPACITANCE
CIN
COUT
(1)
(2)
(3)
(4)
10
350
400
pF
Device electrical characteristics are over Recommended Operating Conditions unless otherwise noted.
Supply power dissipation based on non–compressed commands and data.
LPSDR input specifications are for pin DMD_DEN_ARSTZ.
LPSDR output specification is for pins LS_RDATA_A and LS_RDATA_B.
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6.7 Timing Requirements
Device electrical characteristics are over Recommended Operating Conditions unless otherwise noted
MIN
NOM
MAX
UNIT
LPSDR
tr
Rise slew rate (1)
(20% to 80%) × VDD
0.25
V/ns
tf
Fall slew rate (1)
(80% to 20%) × VDD
0.25
V/ns
tW(H)
Pulse duration LS_CLK high(3)
50% to 50% reference points
0.75
ns
50% to 50% reference points
low(3)
tW(L)
Pulse duration LS_CLK
0.75
ns
tsu
Setup time(3)
LS_WDATA valid before LS_CLK ↑ or LS_CLK ↓
1.5
ns
th
Hold time(3)
LS_WDATA valid after LS_CLK ↑ or LS_CLK ↓
1.5
ns
Rise slew rate(2)
20% to 80% reference points
0.7
SubLVDS
tr
rate(2)
80% to 20% reference points
1
V/ns
0.7
1
V/ns
1.61
1.67
tf
Fall slew
tc
Cycle time DCLK(3)
tW(H)
Pulse duration DCLK high(3)
50% to 50% reference points
0.75
ns
tW(L)
Pulse duration DCLK low(3)
50% to 50% reference points
0.75
ns
tWINDOW
Window time(3) (4)
Setup time + Hold time
tLVDS-ENABLE+REFGEN Power-up receiver(5)
(1)
(2)
(3)
(4)
(5)
ns
0.3
ns
2000
ns
Specification is for DMD_DEN_ARSTZ pin. Refer to LPSDR input rise and fall slew rate in Figure 6-2
See Figure 6-3
See Figure 6-4
See Figure 6-5
Specification is for SubLVDS receiver time only and does not take into account commanding and latency after commanding.
Electrical and Timing Diagrams
Figure 6-2. LPSDR Input Rise and Fall Slew Rate
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Figure 6-3. SubLVDS Input Rise and Fall Slew Rate
Figure 6-4. SubLVDS Switching Parameters
Figure 6-5. High-Speed Training Scan Window
12
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Figure 6-6. SubLVDS Voltage Parameters
Figure 6-7. SubLVDS Waveform Parameters
DCLK_AP
DCLK_BP
D_AP(7:0)
D_BP(7:0)
DCLK_AN
DCLK_BN
D_AN(7:0)
D_BN(7:0)
ESD
Internal
Termination
SubLVDS
Receiver
ESD
Figure 6-8. SubLVDS Equivalent Input Circuit
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Figure 6-9. LPSDR Input Hysteresis
6.8 Switching Characteristics
Over operating free-air temperature range (unless otherwise noted)(1)
PARAMETER
tPD
TEST CONDITIONS
Output propagation, clock to Q, rising edge of LS_CLK
(differential clock signal) input to LS_RDATA output.(2)
TYP
CL = 45 pF
Slew rate, LS_RDATA
MAX
15
0.5
Output duty cycle distortion, LS_RDATA_A and LS_RDATA_B
(1)
(2)
MIN
40%
UNIT
ns
V/ns
60%
Device electrical characteristics are over Recommended Operating Conditions unless otherwise noted.
See Figure 6-10 and Figure 6-11
LPSDR and Test Load Circuit Diagrams
Figure 6-10. LPSDR Read Out
Figure 6-11. Test Load Circuit for Output Propagation Measurement
14
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6.9 System Mounting Interface Loads
PARAMETER
MIN
NOM
MAX
UNIT
Condition 1: Maximum load evenly distributed within each area (1)
Thermal Interface Area
110.8
Electrical Interface Area
111.3
N
Condition 2: Maximum load evenly distributed within each area (1)
Thermal Interface Area
0
Electrical Interface Area
(1)
222.1
N
See Figure 6-12
System Interface Loads Diagram
Figure 6-12. System Interface Loads
6.10 Physical Characteristics of the Micromirror Array
VALUE
UNIT
M
Number of active columns(1)
PARAMETER
1152
micromirrors
N
Number of active rows(1)
1152
micromirrors
ε
Micromirror (pixel) pitch - diagonal(1)
7.6
µm
P
Micromirror (pixel) pitch - horizontal and vertical(1)
10.8
µm
mm
(1)
(2)
Micromirror active array width
(P × M) + (P / 2)
12.447
Micromirror active array height
(P x N) / 2 + (P / 2)
6.226
mm
Micromirror active border
Pond of micromirrors (POM) (2)
10
micromirrors/side
See Figure 6-13
The structure and qualities of the border around the active array includes a band of partially functional micromirrors called the POM.
These micromirrors are structurally and/or electrically prevented from tilting toward the bright or ON state, but still require an electrical
bias to tilt toward OFF.
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Array Physical Characteristics Diagram
Figure 6-13. Micromirror Array Physical Characteristics
16
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6.11 Micromirror Array Optical Characteristics
PARAMETER
TEST CONDITIONS
MIN
1
420 nm - 700 nm
UNIT
degree
–1
DMD efficiency(3)
(3)
MAX
12
Micromirror tilt angle tolerance(2)
(1)
(2)
NOM
DMD landed state(1)
Micromirror tilt angle
degree
66%
Measured relative to the plane formed by the overall micromirror array at 25°C.
For some applications, it is critical to account for the micromirror tilt angle variation in the overall optical system design. With some
optical system designs, the micromirror tilt angle variation within a device may result in perceivable non-uniformities in the light field
reflected from the micromirror array. With some optical system designs, the micromirror tilt angle variation between devices may result
in colorimetry variations, system efficiency variations, or system contrast variations.
DMD efficiency is measured photopically under the following conditions: 24° illumination angle, F/2.4 illumination and collection
apertures, uniform source spectrum (halogen), uniform pupil illumination, the optical system is telecentric at the DMD, and the
efficiency numbers are measured with 100% electronic micromirror landed duty-cycle and do not include system optical efficiency or
overfill loss. This number is measured under conditions described above and deviations from these specified conditions could result in
a different efficiency value in a different optical system. The factors that can influence the DMD efficiency related to system application
include: light source spectral distribution and diffraction efficiency at those wavelengths (especially with discrete light sources such as
LEDs or lasers), and illumination and collection apertures (F/#) and diffraction efficiency. The interaction of these system factors as well
as the DMD efficiency factors that are not system dependent are described in detail in DLPA083A
6.12 Window Characteristics
PARAMETER
MIN
Window material designation
Window refractive index
NOM
UNIT
Corning Eagle XG
at wavelength 546.1 nm
1.5119
Window aperture (1)
(1)
MAX
See (1)
See the mechanical package ICD for details regarding the size and location of the window aperture.
6.13 Chipset Component Usage Specification
The DLP5530S-Q1 is a component of a chipset. Reliable function and operation of the DLP5530S-Q1 requires
that it be used in conjunction with the TPS99000S-Q1 and DLPC230S-Q1, and includes components that
contain or implement TI DMD control technology. TI DMD control technology consists of the TI technology and
devices used for operating or controlling a DLP DMD.
Note
TI assumes no responsibility for image quality artifacts or DMD failures caused by optical system
operating conditions exceeding limits described previously.
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7 Detailed Description
7.1 Overview
The DLP5530S-Q1 Automotive DMD consists of 1,327,104 highly reflective, digitally switchable, micrometersized mirrors organized in a two-dimensional array. As shown in Figure 6-13, the micromirror array consists of
1152 micromirror columns × 1152 micromirror rows in a diamond pixel configuration with a 2:1 aspect ratio.
Around the perimeter of the 1152 × 1152 array of micromirrors is a uniform band of border micromirrors called
the Pond of Micromirrors (POM). The border micromirrors are not user-addressable. The border micromirrors
land in the –12° position once power has been applied to the device. There are 10 border micromirrors on each
side of the 1152 × 1152 active array.
Due to the diamond pixel configuration, the columns of each odd row are offset by half a pixel from the columns
of the even row. Each mirror is switchable between two discrete angular positions: –12° and +12°. The mirrors
are illuminated from the bottom which allows for compact and efficient system optical design.
Although the native resolution of the DLP5530S-Q1 is 1152 × 1152, when paired with the DLPC230S-Q1
controller, the DLP5530S-Q1 can be driven with different resolutions to utilize the 2:1 aspect ratio. For
example, Head-Up Display applications typically use a resolution of 1152 × 576. Please see the DLPC230S-Q1
automotive DMD controller data sheet (DLPS054) for a list of supported resolutions. Diamond pixel arrays also
have the capability to increase display resolution beyond native resolution. Future controllers or video formatters
may take advantage of this enhanced resolution.
7.2 Functional Block Diagram
18
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7.3 Feature Description
The DLP5530S-Q1 consists of a two-dimensional array of 1-bit CMOS memory cells driven by a sub-LVDS
bus from the DLPC230S-Q1 and powered by the TPS99000S-Q1. The temperature sensing diode is used to
continuously monitor the DMD array temperature.
To ensure reliable operation the DLP5530S-Q1 must be used with the DLPC230S-Q1 DMD display controller
and the TPS99000S-Q1 system management and illumination controller.
7.3.1 Sub-LVDS Data Interface
The Sub-LVDS signaling protocol was designed to enable very fast DMD data refresh rates while simultaneously
maintaining low power and low emission.
Data is loaded into the SRAM under each micromirror using the sub-LVDS interface from the DLPC230S-Q1.
This interface consists of 16 pairs of differential data signals plus two clock pairs into two separate buses A and
B loading the left and right half of the SRAM array. The data is latched on both transitions creating a double data
rate (DDR) interface. The sub-LVDS interface also implements a continuous training algorithm to optimize the
data and clock timing to allow for a more robust interface.
The entire DMD array of 1.3 million pixels can be updated at a rate of less than 100 µs as a result of the high
speed sub-LVDS interface.
7.3.2 Low Speed Interface for Control
The purpose of the low speed interface is to configure the DMD at power up and power down and to control
the micromirror reset voltage levels that are synchronized with the data loading. The micromirror reset voltage
controls the time when the mirrors are mechanically switched. The low speed differential interface includes 2
pairs of signals for write data and clock, and 2 single-ended signals for output (A and B).
7.3.3 DMD Voltage Supplies
The micromirrors require unique voltage levels to control the mechanical switching from –12° to +12°. These
voltage levels are nominally 16 V, 8.5 V, and –10 V (VBIAS, VOFFSET, and VRESET), and are generated by the
TPS99000S-Q1.
7.3.4 Asynchronous Reset
Reset of the DMD is required and controlled by the DLPC230S-Q1 via the signal DMD_DEN_ARSTZ.
7.3.5 Temperature Sensing Diode
The DMD includes a temperature sensing diode designed to be used with the TMP411 temperature monitoring
device. The DLPC230S-Q1 monitors the temperature sense diode via the TMP411. The DLPC230S-Q1
operation of the DMD timing can be adjusted based on the DMD array temperature, therefore this connection is
essential to ensure reliable operation of the DMD.
Figure 7-1 shows the typical connection between the DLPC230S-Q1, TMP411, and the DMD.
Figure 7-1. Temperature Sense Diode Typical Circuit Configuration
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7.3.5.1 Temperature Sense Diode Theory
A temperature sensing diode is based on the fundamental current and temperature characteristics of a transistor.
The diode is formed by connecting the transistor base to the collector. Three different known currents flow
through the diode and the resulting diode voltage is measured in each case. The difference in their base–emitter
voltages is proportional to the absolute temperature of the transistor.
Refer to the TMP411-Q1 data sheet for detailed information about temperature diode theory and measurement.
Figure 7-2 and Figure 7-3 illustrate the relationships between the current and voltage through the diode.
IE1
IE2
TEMP_N
+
VBE 1,2
-
TEMP_P
û VBE (mV)
VBE (mV)
Figure 7-2. Temperature Measurement Theory
100uA
10uA
1uA
Temperature (°C)
Temperature (°C)
Figure 7-3. Example of Delta VBE Versus Temperature
7.4 System Optical Considerations
Optimizing system optical performance and image performance strongly relates to optical system design
parameter trades. Although it is not possible to anticipate every conceivable application, projector image and
optical performance is contingent on compliance to the optical system operating conditions described in the
following sections.
7.4.1 Numerical Aperture and Stray Light Control
The numerical aperture of the illumination and projection optics at the DMD optical area should be the same.
This cone angle defined by the numerical aperture should not exceed the nominal device mirror tilt angle unless
appropriate apertures are added in the illumination and/or projection pupils to block out flat-state and stray light
from the projection lens. The mirror tilt angle defines the DMD's capability to separate the "On" optical path
from any other light path, including undesirable flat-state specular reflections from the DMD window, DMD border
structures, or other system surfaces near the DMD such as prism or lens surfaces.
20
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7.4.2 Pupil Match
TI’s optical and image performance specifications assume that the exit pupil of the illumination optics is
nominally centered and located at the entrance pupil position of the projection optics. Misalignment of pupils
between the illumination and projection optics can degrade screen image uniformity and cause objectionable
artifacts in the display’s border and/or active area. These artifacts may require additional system apertures to
control, especially if the numerical aperture of the system exceeds the pixel tilt angle.
7.4.3 Illumination Overfill
Overfill light illuminating the area outside the active array can create artifacts from the mechanical features
and other surfaces that surround the active array. These artifacts may be visible in the projected image. The
illumination optical system should be designed to minimize light flux incident outside the active array and on
the window aperture. Depending on the particular system’s optical architecture and assembly tolerances, this
amount of overfill light on the area outside of the active array may still cause artifacts to be visible.
Illumination light and overfill can also induce undesirable thermal conditions on the DMD, especially if
illumination light impinges directly on the DMD window aperture or near the edge of the DMD window. Heat
load on the aperture in the areas shown in Figure 6-1 should not exceed the values listed in Recommended
Operating Conditions. This area is a 0.5-mm wide area the length of the aperture opening. The values listed
in Recommended Operating Conditions assume a uniform distribution. For a non-uniform distribution please
contact TI for additional information.
Note
TI ASSUMES NO RESPONSIBILITY FOR IMAGE QUALITY ARTIFACTS OR DMD FAILURES
CAUSED BY OPTICAL SYSTEM OPERATING CONDITIONS EXCEEDING LIMITS DESCRIBED
PREVIOUSLY.
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7.5 DMD Image Performance Specification
Table 7-1. DMD Image Performance
PARAMETER(1) (2)
Dark Blemishes - Viewed on a linear blue 60
MIN
screen.(3)
NOM
MAX
UNIT
4
Light Blemishes - Viewed on a linear gray 10 screen.
4
Bright Pixels - Viewed on a linear gray 10 screen.
0
micromirrors
Dark Pixels - Viewed on a white screen.
4
micromirrors
(1)
(2)
(3)
See Section 7.4
Blemish counts do not include reflections or shadows of the same artifact. Any artifact that is not specifically called out in this table
is acceptable. Viewing distance must be > 60 in. Screen size should be similar to application image size. All values referenced are in
linear gamma. Non-linear gamma curves may be running by default, and it should be ensured with a TI applications engineer that the
equivalent linear gamma value as specified is used to judge artifacts.
Linear gray 5 may be substituted in monochrome applications.
7.6 Micromirror Array Temperature Calculation
Figure 7-4. DMD Thermal Test Points
The active array temperature can be computed analytically from measurement points on the outside of the
package, the package thermal resistance, the electrical power, and the illumination heat load.
Relationship between array temperature and the reference ceramic temperature (thermocouple location TP1 in
Figure 7-4) is provided by the following equations:
TARRAY = TCERAMIC + (QARRAY × RARRAY–TO–CERAMIC)
(1)
QARRAY = QELECTRICAL + QILLUMINATION
(2)
where
•
•
•
•
•
•
•
•
TARRAY = computed DMD array temperature (°C)
TCERAMIC = measured ceramic temperature, TP1 location in Figure 7-4 (°C)
RARRAY–TO–CERAMIC = DMD package thermal resistance from array to thermal test point TP1 (°C/W), see
Thermal Information
QARRAY = total power, electrical plus absorbed, on the DMD array (W)
QELECTRICAL = nominal electrical power dissipation by the DMD (W)
QILLUMINATION = (CL2W × SL)
CL2W = conversion constant for screen lumens to power on the DMD (W/lm)
SL = measured screen lumens (lm)
Electrical power dissipation of the DMD is variable and depends on the voltages, data rates, and operating
frequencies.
Absorbed power from the illumination source is variable and depends on the operating state of the mirrors and
the intensity of the light source.
22
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Equations shown above are valid for a 1–chip DMD system with a total projection efficiency from DMD to the
screen of 87%.
The constant CL2W is based on the DMD array characteristics. It assumes a spectral efficiency of 300 lm/W for
the projected light and illumination distribution of 83.7% on the active array, and 16.3% on the array border.
The following is a sample calculation for a typical projection application:
1. SL = 50 lm
2. CL2W = 0.00293 W/lm
3. QELECTRICAL = 0.4 W (This number does not represent an actual DMD electrical power; for illustration
purposes only)
4. RARRAY–TO–CERAMIC = 1.1°C/W
5. TCERAMIC = 55°C
6. QARRAY = 0.4 W + (0.00293 W/lm × 50 lm) = 0.5465 W
7. TARRAY = 55°C + (0.5465 W × 1.1°C/W) = 55.6°C
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7.7 Micromirror Landed-On/Landed-Off Duty Cycle
7.7.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
The micromirror landed-on/landed-off duty cycle (landed duty cycle) denotes the amount of time (as a
percentage) that an individual micromirror is landed in the ON state versus the amount of time the same
micromirror is landed in the OFF state.
As an example, a landed duty cycle of 90/10 indicates that the referenced pixel is in the ON state 90% of the
time (and in the OFF state 10% of the time), whereas 10/90 would indicate that the pixel is in the OFF state 90%
of the time. Likewise, 50/50 indicates that the pixel is ON 50% of the time and OFF 50% of the time.
Note that when assessing landed duty cycle, the time spent switching from one state (ON or OFF) to the other
state (OFF or ON) is considered negligible and is thus ignored.
Since a micromirror can only be landed in one state or the other (ON or OFF), the two numbers (percentages)
always add to 100.
24
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The DLP5530S-Q1 chipset is designed to support projection-based automotive applications such as head-up
display systems.
8.2 Typical Application
The chipset consists of three components—the DLP5530S-Q1 automotive DMD, the DLPC230S-Q1, and the
TPS99000S-Q1. The DMD is a light modulator consisting of tiny mirrors that are used to form and project
images. The DLPC230S-Q1 is a controller for the DMD; it formats incoming video and controls the timing of
the DMD illumination sources and the DMD in order to display the incoming video. The TPS99000S-Q1 is
a controller for the illumination sources (e.g. LEDs or lasers) and a management IC for the entire chipset.
In conjunction, the DLPC230S-Q1 and the TPS99000S-Q1 can also be used for system-level monitoring,
diagnostics, and failure detection features. Figure 8-1 is a system level block diagram with these devices in
the DLP head-up display configuration and shows the primary features and functions of each device.
VLED
6.5 V
PreRegulator
(optional)
VBATT
6.5 V
3.3 V
LDO
External ADC inputs for
general usage
AC3
Flash
MPU
ECC
LED drive
Ultra wide dimming
LED controller
F
E
T
s
SPI(4)
SEQ_START
HOST_IRQ
DLPC230S-Q1
Host
D_EN
28
SEQ_CLK
eSRAM
frame buffer
I2C(2)
I2C_0
SPI(4)
SPI_0
3.3 V
VCC_FLASH
VCC_INTF
1.8 V
VIO
1.1 V
VCORE
PARKZ
RESETZ
INTZ
GPIOx
GPIOx
Photo diode
meas. system
Spare
GPIO
Sys clock
monitor
shunt(2)
RED
GREEN
BLUE
Illumination
Optics
photo diode
External watchdogs /
over brightness / and
other monitors
COMPOUT
Parallel
LM3409
Low-side current
measurement
TPS99000S-Q1
S_EN
OpenLDI
CTRL
4
DATA
24
12 bit
ADC
ADC_CTRL(2)
WD(2)
LED_SEL(4)
SPI_1
Supplies for
DLPC230 and DMD
High-side current
limiting
PROJ_ON
Optional SPI Monitor
SPI_2
1.1 V
1.8 V
3.3 V
reg
reg
Reg
Power sequencing
and monitoring
General
Purpose
PD neg
LDO
BIAS, RST, OFS
(3)
DMD bias
regulator
EEPROM
I2C_1
TMP411
(2)
DMD die temperature
DMD
Sub-LVDS
Interface
sub-LVDS DATA
DLP5530S-Q1
Control
Figure 8-1. Head-Up Display System Block Diagram
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8.2.1 Application Overview
Figure 8-1 shows the system block diagram for a DLP HUD system. The system uses the DLPC230S-Q1,
TPS99000S-Q1, and the DLP5530S-Q1 automotive DMD to enable a head-up display with high brightness,
high efficiency, and a large virtual image distance. The combination of the DLPC230S-Q1 and TPS99000S-Q1
removes the need for external SDRAM and a dedicated microprocessor. The chipset manages the illumination
control of LED sources, power sequencing functions, and system management functions. Additionally, the
chipset supports numerous system diagnostic and built-in self test (BIST) features. The following paragraphs
describe the functionality of the chipset used for a HUD system in more detail.
The DLPC230S-Q1 is a controller for the DMD and the light sources in the DLP HUD module. It receives input
video from the host and synchronizes DMD and light source timing in order to achieve the desired video. The
DLPC230S-Q1 formats input video data that is displayed on the DMD. It synchronizes these video segments
with light source timing in order to create a video with a multi-colored display.
The DLPC230S-Q1 receives inputs from a host processor in the vehicle. The host provides commands and
input video data. Host commands can be sent using either the I2C bus or SPI bus. The bus that is not being
used for host commands can be used as a read-only bus for diagnostic purposes. Input video can be sent
over an OpenLDI bus or a parallel 24-bit bus. The SPI flash memory provides the embedded software for
the DLPC230S-Q1’s ARM core and default settings. The TPS99000S-Q1 provides diagnostic and monitoring
information to the DLPC230S-Q1 using an SPI bus and several other control signals such as PARKZ, INTZ, and
RESETZ to manage power-up and power-down sequencing. The TMP411 uses an I2C interface to provide the
DMD array temperature to the DLPC230S-Q1.
The outputs of the DLPC230S-Q1 are configuration and monitoring commands to the TPS99000S-Q1, timing
controls to the LED or laser driver, control and data signals to the DMD, and monitoring and diagnostics
information to the host processor. The DLPC230S-Q1 communicates with the TPS99000S-Q1 over an SPI
bus. It uses this to configure the TPS99000S-Q1 and to read monitoring and diagnostics information from the
TPS99000S-Q1. The DLPC230S-Q1 sends drive enable signals to the LED or laser driver, and synchronizes this
with the DMD mirror timing. The control signals to the DMD are sent using a sub-LVDS interface.
The TPS99000S-Q1 is a highly integrated mixed-signal IC that controls DMD power and provides monitoring
and diagnostics information for the DLP HUD system. The power sequencing and monitoring blocks of the
TPS99000S-Q1 properly power up the DMD and provide accurate DMD voltage rails (–16 V, 8.5 V, and 10
V), and then monitor the system’s power rails during operation. The integration of these functions into one IC
significantly reduces design time and complexity. The TPS99000S-Q1 also has several output signals that can
be used to control a variety of LED or laser driver topologies. The TPS99000S-Q1 has several general-purpose
ADCs that designers can use for system level monitoring, such as over-brightness detection.
The TPS99000S-Q1 receives inputs from the DLPC230S-Q1, the power rails it monitors, the host processor,
and potentially several other ADC ports. The DLPC230S-Q1 sends configuration and control commands to
the TPS99000S-Q1 over an SPI bus and several other control signals. The DLPC230S-Q1’s clocks are also
monitored by the watchdogs in the TPS99000S-Q1 to detect any errors. The power rails are monitored by the
TPS99000S-Q1 in order to detect power failures or glitches and request a proper power down of the DMD
in case of an error. The host processor can read diagnostics information from the TPS99000S-Q1 using a
dedicated SPI bus, which enables independent monitoring. Additionally the host can request the image to be
turned on or off using a PROJ_ON signal. Lastly, the TPS99000S-Q1 has several general-purpose ADCs that
can be used to implement system level monitoring functions.
The outputs of the TPS99000S-Q1 are diagnostic information and error alerts to the DLPC230S-Q1, and control
signals to the LED or laser driver. The TPS99000S-Q1 can output diagnostic information to the host and the
DLPC230S-Q1 over two SPI buses. In case of critical system errors, such as power loss, it outputs signals to
the DLPC230S-Q1 that trigger power down or reset sequences. It also has output signals that can be used to
implement various LED or laser driver topologies.
The DMD is a micro-electro-mechanical system (MEMS) device that receives electrical signals as an input (video
data), and produces a mechanical output (mirror position). The electrical interface to the DMD is a sub-LVDS
interface with the DLPC230S-Q1. The mechanical output is the state of more than 1.3 million mirrors in the DMD
array that can be tilted ±12°. In a projection system the mirrors are used as pixels in order to display an image.
26
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8.2.2 Reference Design
For information about connecting together the DLP5530S-Q1 DMD, DLPC230S-Q1 controller, and TPS99000SQ1, please contact the TI Application Team for additional information about the DLP5530S-Q1 evaluation
module (EVM). TI has optical-mechanical reference designs available, see the TI Application team for more
information.
8.2.3 Application Mission Profile Consideration
Each application is anticipated to have different mission profiles, or number of operating hours at different
temperatures. To assist in evaluation the Application Report Reliability Lifetime Estimates for DLP3030-Q1
and DLP553x-Q1 DMDs in Automotive Applications may be provided. See the TI Application team for more
information.
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9 Power Supply Recommendations
The following power supplies are all required to operate the DMD: VDD, VDDI, VOFFSET, VBIAS, and VRESET.
All VSS connections are also required. DMD power-up and power-down sequencing is strictly controlled by the
TPS99000S-Q1 device.
CAUTION
For reliable operation of the DMD, the following power supply sequencing requirements must be
followed. Failure to adhere to the prescribed power-up and power-down procedures may affect
device reliability.
VDD, VDDI, VOFFSET, VBIAS, and VRESET power supplies have to be coordinated during powerup and power-down operations. Failure to meet any of the below requirements will result in a
significant reduction in the DMD’s reliability and lifetime. VSS must also be connected.
9.1 Power Supply Power-Up Procedure
•
•
•
•
During power-up, VDD and VDDI must always start and settle before VOFFSET, VBIAS, and VRESET
voltages are applied to the DMD.
During power-up, it is a strict requirement that the delta between VBIAS and VOFFSET must be within the
specified limit shown in the Recommended Operating Conditions.
During power-up, the DMD’s LPSDR input pins shall not be driven high until after VDD and VDDI have settled
at operating voltage.
During power-up, there is no requirement for the relative timing of VRESET with respect to VOFFSET and
VBIAS. Power supply slew rates during power-up are flexible, provided that the transient voltage levels follow
the requirements listed previously and in Figure 9-1.
9.2 Power Supply Power-Down Procedure
•
•
•
•
•
28
The power-down sequence is the reverse order of the previous power-up sequence. VDD and VDDI must be
supplied until after VBIAS, VRESET, and VOFFSET are discharged to within 4 V of ground.
During power-down, it is not mandatory to stop driving VBIAS prior to VOFFSET, but it is a strict requirement
that the delta between VBIAS and VOFFSET must be within the specified limit shown in the Recommended
Operating Conditions (Refer to Note 2 in Section 9.3).
During power-down, the DMD’s LPSDR input pins must be less than VDDI, the specified limit shown in the
Recommended Operating Conditions.
During power-down, there is no requirement for the relative timing of VRESET with respect to VOFFSET and
VBIAS.
Power supply slew rates during power-down are flexible, provided that the transient voltage levels follow the
requirements listed previously and in Section 9.3.
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9.3 Power Supply Sequencing Requirements
A.
B.
C.
D.
To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified in the Recommended Operating
Conditions. OEMs may find that the most reliable way to ensure this is to power VOFFSET prior to VBIAS during power-up and to
remove VBIAS prior to VOFFSET during power-down. Also, the TPS99000S-Q1 is capable of managing the timing between VBIAS and
VOFFSET.
To prevent excess current, the supply voltage delta |VBIAS – VRESET| must be less than specified than the limit shown in the
Recommended Operating Conditions.
When system power is interrupted, the TPS99000S-Q1 initiates hardware power-down that disables VBIAS, VRESET and VOFFSET
after the Micromirror Park Sequence.
Drawing is not to scale and details are omitted for clarity.
Figure 9-1. Power Supply Sequencing Requirements (Power Up and Power Down)
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10 Layout
10.1 Layout Guidelines
Please refer to the DLPC230S-Q1 and TPS99000S-Q1 data sheets for specific PCB layout and routing
guidelines. For specific DMD PCB guidelines, use the following:
•
•
•
•
•
•
•
Match lengths for the LS_WDATA and LS_CLK signals.
Minimize vias, layer changes, and turns for the HS bus signals.
Minimum of two 220-nF decoupling capacitors close to VBIAS.
Minimum of two 220-nF decoupling capacitors close to VRESET.
Minimum of two 220-nF decoupling capacitors close to VOFFSET.
Minimum of four 100-nF decoupling capacitors close to VDDI and VDD.
Temperature diode pins
The DMD has an internal diode (PN junction) that is intended to be used with an external TI TMP411
temperature sensing IC. PCB traces from the DMD’s temperature diode pins to the TMP411 are sensitive to
noise. Please see the TMP411 data sheet for specific routing recommendations.
30
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
Figure 11-1. Part Number Description
11.1.2 Device Markings
The device marking includes the legible character string GHJJJJK DLP553xxAFYSQ1. GHJJJJK is the lot trace
code. DLP553xxAFYSQ1 is the part number.
Figure 11-2. DMD Marking
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
DLP® is a registered trademark of Texas Instruments.
All trademarks are the property of their respective owners.
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11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 DMD Handling
The DMD is an optical device so precautions should be taken to avoid damaging the glass window. Please see
the application note DLPA019 DMD Handling for instructions on how to properly handle the DMD.
11.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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7-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
DLP5530SAFYSQ1
ACTIVE
CPGA
FYS
149
33
RoHS & Green
Call TI
N / A for Pkg Type
-40 to 105
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of