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DRV3245Q-Q1
SLVSEE3B – NOVEMBER 2017 – REVISED OCTOBER 2019
DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance
Sensing, Protection and Diagnostics
1 Features
2 Applications
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•
1
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•
(1)
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AEC-Q100 qualified for automotive applications:
– Device temperature grade 1:
–40°C to +125°C, TA
SafeTI™semiconductor component
– Developed according to the applicable
requirements of ISO 26262
4.5-V to 45-V operating voltage
Programmable peak gate drive currents up to 1A
Charge-pump gate driver for 100% Duty Cycle
Current-shunt amplifiers and phase comparators
– A / C Device: 3 current-shunt amplifiers(1) and
3-phase comparators with status through SPI
12-V automotive motor-control applications
– Electrical power steering (EPS, EHPS)
– Electrical brake and brake assist
– Transmissions and pumps
3 Description
The DRV3245Q-Q1 device is a FET gate driver IC for
three-phase motor-drive applications designed
according to the applicable requirements of ISO
26262 for functional safety applications. The device
provides three half-bridge drivers each capable of
driving a high-side and low-side N-channel MOSFET
while also providing sophisticated protection and
monitoring of the FETs. A charge-pump driver
enables 100% duty cycle and supports low battery
voltages during cold-crank operation. The integration
of current-sense amplifiers, integrated phase
comparators, and SPI-based configuration of the
driver and its peripherals enable reduction of the bill
of materials (BOM) and space on the printed circuit
board (PCB) because of the elimination of most
external and passive components.
C device : Low-drift offset high-precision amplifiers
– B Device: 2 current-shunt amplifiers and 3phase comparators with real-time monitor
through digital pins
3-PWM or 6-PWM input control up to 20 kHz
Single PWM-mode commutation capability
Supports both 3.3-V and 5-V digital interface
Serial peripheral interface (SPI)
Thermally-enhanced 48-Pin HTQFP
Protection features:
– Internal regulators, battery voltage monitor
– SPI CRC
– Clock monitor
– Analog built-in self test
– Programmable dead-time control
– MOSFET shoot-through prevention
– MOSFET VDS overcurrent monitors
– Gate-source voltage real time monitor
– Overtemperature warning and Shutdown
The
DRV3245Q-Q1
device
also
integrates
diagnostics and protection for each internal block and
provides support for common system diagnostic
checks each of which can be instantiated and
reported through SPI. This flexibility of the integrated
features allows the device to integrate seamlessly
into a variety of safety architectures.
Device Information
PART NUMBER
DRV3245Q-Q1
PACKAGE
HTQFP (48)
(1)
BODY SIZE (NOM)
7.00 mm × 7.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
4.5 to 45 V
MCU
6
3-Phase Gate
Driver
SPI
4
nFAULT
Shutdown
A Device
C Device
Protection
Diagnostics
Monitoring
Gate Drive
6(Gate)
+6(Source)
Sense
Shunt Amplifiers
3
Shunt Amplifiers
3(P) + 2(N)
2
PWM
6
SPI
M
MCU
2
PWM
N-Channel MOSFETs
Shutdown
4
nFAULT
B Device
3-Phase Gate
Driver
Protection
Diagnostics
Monitoring
Gate Drive
6(Gate)
+6(Source)
Shunt Amplifiers
3
Phase
Comparators
3
Shunt Amplifiers
Sense
Phase
Comparators
2(P) + 2(N)
N-Channel MOSFETs
4.5 to 45 V
M
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV3245Q-Q1
SLVSEE3B – NOVEMBER 2017 – REVISED OCTOBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device and Documentation Support....................
1
1
1
2
3
5.1 Device Support.......................................................... 3
5.2 Documentation Support ............................................ 3
5.3
5.4
5.5
5.6
5.7
6
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
3
3
3
3
3
Mechanical, Packaging, and Orderable
Information ............................................................. 4
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (May 2018) to Revision B
•
Added DRV3245C device ...................................................................................................................................................... 1
Changes from Original (November 2017) to Revision A
•
2
Page
Page
Changed the device status from: Advance Information to: Production Data.......................................................................... 1
Submit Documentation Feedback
Copyright © 2017–2019, Texas Instruments Incorporated
Product Folder Links: DRV3245Q-Q1
DRV3245Q-Q1
www.ti.com
SLVSEE3B – NOVEMBER 2017 – REVISED OCTOBER 2019
5 Device and Documentation Support
5.1 Device Support
5.1.1 Device Nomenclature
Figure 1 shows a legend for reading the complete orderable device name for the DRV3245Q-Q1 device
DRV32
(45) (A) (Q) (PHP) (R)
(Q1)
Pre fix
DRV32: Three Pha se Gate Drive r
AEC-Q100
Q1: Automotive qu alifica tion
Blan k: Non-automotive
Ser ies
45: 4.5 ± 45 V device
Tape and Reel
R: 300 0 pieces/reel
T: 250 pieces/reel
Curren t-shunt a mp lifie rs
A: 3x curre nt-shunt a mp lifie rs
B: 2x curre nt-shunt a mp lifie rs
C: 3x hi gh-precision currentshunt a mp lifie rs
Package
PHP: 48-pin QFP
Temperature Range
Q: ±40°C to 125°C
E: ±40°C to 150°C
Figure 1. Device Nomenclature
5.2 Documentation Support
For related documentation see the following:
• Texas Instruments, PowerPAD™ Thermally Enhanced Package application report
• Texas Instruments, PowerPAD™ Made Easy application report
• Texas Instruments, Sensored 3-Phase BLDC Motor Control Using MSP430 application report
• Texas Instruments, Understanding IDRIVE and TDRIVE in TI Motor Gate Drivers application report
5.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
5.4 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
5.5 Trademarks
SafeTI, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
5.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
5.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Submit Documentation Feedback
Copyright © 2017–2019, Texas Instruments Incorporated
Product Folder Links: DRV3245Q-Q1
3
DRV3245Q-Q1
SLVSEE3B – NOVEMBER 2017 – REVISED OCTOBER 2019
www.ti.com
6 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
4
Submit Documentation Feedback
Copyright © 2017–2019, Texas Instruments Incorporated
Product Folder Links: DRV3245Q-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV3245AQPHPRQ1
ACTIVE
HTQFP
PHP
48
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
DR3245AQ
DRV3245BQPHPRQ1
ACTIVE
HTQFP
PHP
48
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
DR3245BQ
DRV3245CQPHPRQ1
ACTIVE
HTQFP
PHP
48
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
DR3245CQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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