DRV425EVM

User's Guide SLOU410B – September 2015 – Revised April 2020 DRV425 Evaluation Module This user’s guide describes the characteristics, operation, and use of the DRV425EVM. The DRV425 is designed for open-loop magnetic field sensing using an integrated fluxgate. A complete circuit description as well as schematic diagram and bill of materials is included. 1 2 3 4 5 Contents Features ....................................................................................................................... Introduction ................................................................................................................... Magnetic Field Interface .................................................................................................... 3.1 Power Supply........................................................................................................ 3.2 Reference Voltages................................................................................................. 3.3 Output Voltage ...................................................................................................... EVM Operation ............................................................................................................... 4.1 Error and Over Range.............................................................................................. 4.2 Calculation of Magnetic Field Strength .......................................................................... Schematic and Bill of Materials ............................................................................................ 1 1 2 2 2 3 4 4 4 6 List of Figures 1 Magnetic Field Axis of Sensitivity .......................................................................................... 2 2 Board Modification for External Reference ............................................................................... 3 3 Output Voltage vs. Magnetic Field Strength 4 5 6 ............................................................................. Error vs. Magnetic Field Strength.......................................................................................... DRV425EVM Top Side Layout............................................................................................. DRV425EVM Schematic .................................................................................................... 5 5 6 7 List of Tables 1 Internal Reference Options ................................................................................................. 2 2 Factory Configuration Defaults ............................................................................................. 4 3 Bill of Materials ............................................................................................................... 6 Trademarks All trademarks are the property of their respective owners. 1 Features • • • 2 Full-featured Evaluation Board for the DRV425 Allows for the use of various user supplied compensation coils On board or external reference option Introduction The DRV425EVM is an evaluation module for the DRV425 integrated circuit. The DRV425 is designed for magnetic field sensing applications, enabling isolated precision DC and AC field measurements. The DRV425 features an integrated fluxgate sensor and all required analog signal conditioning circuits, minimizing component count and cost. SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated DRV425 Evaluation Module 1 Magnetic Field Interface 3 www.ti.com Magnetic Field Interface The DRV425 device contains and integrated fluxgate sensor which is located between pins 2 and 14. The magnetic field sensitivity is parallel to the surface of the chip. Figure 1. Magnetic Field Axis of Sensitivity 3.1 Power Supply The DRV425EVM Board can be powered by a user provided 3.0 V to 5.5 V DC supply. The supply voltage is applied to J1 pin 4 (VDD) referenced to pin 3 (GND). 3.2 Reference Voltages The DRV425EVM has an internal reference source, which is enabled automatically when the appropriate power source is applied to the device. There are three options for the reference voltage which depend on the state of two reference selection pins RSEL1 and RSEL0 as shown in Table 1. Table 1. Internal Reference Options RSEL1 RSEL0 REFERENCE VOLTAGE 0 0 Fixed Reference of 2.5 V 0 1 Fixed Reference of 1.65 V 1 0 1 1 Ratio-metric reference equal to VDD/2 (default) The reference options provided are based on the typical operating voltages of the device. For applications using a 3.3-V power supply, the reference can be fixed at 1.65 V. For 5-V operation, the reference is normally set for 2.5 V. In applications where the supply voltage may vary, the ratiometric option is provided. The DRV425EVM is not directly configured for an external reference. If an external reference is desired, the trace between pins 4 and 5 of the DRV425 device can be cut as noted in Figure 2. 2 DRV425 Evaluation Module SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated Magnetic Field Interface www.ti.com Figure 2. Board Modification for External Reference An external reference can be applied to J1 pin 1, referenced to pin 3. If an external reference is used, it is important to keep it at a level of VDD/2, which is the common mode point of the differential amplifier output stage of the DRV425 device. Reference voltages beyond VDD/2 will result in offset and gain errors. 3.3 Output Voltage The output voltage of the DRV425EVM is located on J1 pin 2 and can be referred to the reference at J1 pin 2 or the power supply ground at J1 pin 3. SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated DRV425 Evaluation Module 3 EVM Operation 4 www.ti.com EVM Operation Factory setup of the DRV425EVM is for an input supply voltage range from 3.3 V to 5 V. Resistors R3 through R8 configure the reference voltage and bandwidth settings of the DRV425EVM. The default conditions are listed in Table 2. Table 2. Factory Configuration Defaults RESISTOR FUNCTION DEFAULT CONDITION R3 Pull-up for BSEL to VDD 0Ω R4 Pull-down for BSEL to GND open R5 Pull-up for RSEL0 to VDD 0Ω R6 Pull-down for RSEL0 to GND open R7 Pull-up for RSEL1 to VDD 0Ω R8 Pull-down for RSEL1 to GND open If the default condition is not the desired configuration of the DRV425EVM, simply remove and replace the resistors for the desired operating mode. If there is a desire to modify the state of the reference voltage or device bandwidth during physical operation of the EVM, resistors R3 through R8 can be removed and driven directly via GPIO pins on a microprocessor using fly wires. 4.1 Error and Over Range R2 and R9 are 10-kΩ pull-up resistors on the Over Range (/OR) and Error (/ER) flag output pins respectively. To observe the state of the flags, simply probe the chip side of the resistor. These outputs are open drain and a pull up is required to observe the active low output state. These pins may also be flywired to a micro controller for use as interrupt pins. 4.2 Calculation of Magnetic Field Strength The magnetic field strength (B) can be calculated by Equation 1. B= VOUT VOUT = G x Gfg x Rshunt 4 x 12.2 x R1 (1) The maximum magnetic field range of the DRV425 is ±2 mT. With the 100 Ω shunt located at R1, the maximum field measurement range is ±500 µT.To increase the sensitivity, R1 can be adjusted based on Equation 1. Higher magnetic fields result in increased current flowing through R1. The output voltage of the differential amplifier in the DRV425 will reach its peak amplitude with a maximum voltage drop across R1 as shown in Equation 2. VR1 = 4 VDD - REFOUT 4 DRV425 Evaluation Module (2) SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated EVM Operation www.ti.com 4.2.1 Laboratory Measurement Results Figure 3 and Figure 4 provide measured test results for linearity and error. 2500 2000 Output Voltage (mV) 1500 1000 500 0 -500 -1000 -1500 -2000 -2500 -500 -400 -300 -200 -100 0 100 200 Magnet Field B (uT) 300 400 500 D001 Figure 3. Output Voltage vs. Magnetic Field Strength 0.25% Error (%) 0.15% 0.05% -0.05% -0.15% -0.25% -500 -400 -300 -200 -100 0 100 200 Magnetic Field B (uT) 300 400 500 D002 Figure 4. Error vs. Magnetic Field Strength SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated DRV425 Evaluation Module 5 Schematic and Bill of Materials 5 www.ti.com Schematic and Bill of Materials The following pages contain the DRV425EVM Bill of materials, top level silkscreen and circuit schematic diagrams. Table 3. Bill of Materials DESIGNATORS DESCRIPTION MANUFACTURER MFG. PART NUMBER C1, C2 CAP, CERM, 1 µF, 25 V, +/- 10%, X7R, 0603 Kemet J1 Header, 100mil, 4x1, Gold, R/A, TH Samtec R1 RES, 100, 1%, 0.125 W, 0805 Vishay-Dale CRCW0805100RFKEA R2, R9 RES, 10 k, 5%, 0.063 W, 0402 Vishay-Dale CRCW040210K0JNED R3, R5, R7 RES, 0, 5%, 0.05 W, 0201 Panasonic U1 Fluxgate Magnetic Field Sensor Texas Instruments R4, R6, R8 Not Installed Panasonic C0603C105K3RACTU TSW-104-08-G-S-RA ERJ-1GE0R00C DRV425RTJR ERJ-1GE0R00C Figure 5 provides detail of the top-side layout for the DRV425EVM. Please note that resistors R3 through R8 do not have any physical silkscreen on the printed circuit board, they are highlights below for clarity. Figure 5. DRV425EVM Top Side Layout 6 DRV425 Evaluation Module SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated Schematic and Bill of Materials www.ti.com Figure 6. DRV425EVM Schematic SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated DRV425 Evaluation Module 7 Revision History www.ti.com Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from A Revision (October 2015) to B Revision ............................................................................................... Page • Changed the FUNCTION column of Table 2 .......................................................................................... 4 Changes from Original (September 2015) to A Revision ............................................................................................... Page • • • 8 Deleted text "The magnetic field measurement range is between ± 0.5 mT based on the installed shunt resistor at R1 of 100 Ω." from the first paragraph in Section 4 .......................................................................................... 4 Changed Equation 1 ...................................................................................................................... 4 Added text "To increase the sensitivity, R1 can be adjusted based on Equation 1." in Section 4.2 ........................... 4 Revision History SLOU410B – September 2015 – Revised April 2020 Submit Documentation Feedback Copyright © 2015–2020, Texas Instruments Incorporated STANDARD TERMS FOR EVALUATION MODULES 1. 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