Product
Folder
Order
Now
Support &
Community
Tools &
Software
Technical
Documents
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
DRV5011 Low-Voltage, Digital-Latch Hall Effect Sensor
1 Features
3 Description
•
The DRV5011 device is a digital-latch Hall effect
sensor designed for motors and other rotary systems.
Ultra-small X2SON, SOT-23, DSBGA or TO-92
package
High magnetic sensitivity: ±2 mT (typical)
Robust hysteresis: 4 mT (typical)
Fast sensing bandwidth: 30-kHz
VCC operating range: 2.5-V to 5.5-V
Push-pull CMOS output
– Capable of 5-mA sourcing, 20-mA sinking
Operating temperature: –40°C to +135°C
1
•
•
•
•
•
•
2 Applications
•
•
Brushless dc motor sensors
Incremental rotary encoding:
– Brushed dc motor feedback
– Motor speed (tachometer)
– Mechanical travel
– Fluid measurement
– Knob turning
– Wheel speed
E-bikes
Flow meters
•
•
The device has an efficient low-voltage architecture
that operates from 2.5 V to 5.5 V. The device is
offered in standard SOT-23, low-profile X2SON,
DSBGA and TO-92 packages. The output is a pushpull driver that requires no pullup resistor, enabling
more compact systems.
When a south magnetic pole is near the top of the
package and the BOP threshold is exceeded, the
device drives a low voltage. The output stays low until
a north pole is applied and the BRP threshold is
crossed, which causes the output to drive a high
voltage. Alternating north and south poles are
required to toggle the output, and integrated
hysteresis separates BOP and BRP to provide robust
switching.
The device produces consistent performance across
a wide ambient temperature range of –40°C to
+135°C.
Device Information(1)
PART NUMBER
PACKAGE
DRV5011
BODY SIZE (NOM)
DSBGA (4)
0.80 mm × 0.80 mm
SOT-23 (3)
2.92 mm × 1.30 mm
X2SON (4)
1.10 mm × 1.40 mm
TO-92 (3)
4.00 mm × 3.15 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Typical Schematic
Magnetic Response
VCC
S
N
N
S
DRV5011
VCC
S
N
GND
OUT
N
OUT
Controller
VCC
GPIO
BHYS
S
0V
Copyright © 201 7, Texas Instrumen ts Incorpor ate d
B
north
BRP
0 mT
BOP
south
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
5
5
5
6
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Magnetic Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 7
7.1
7.2
7.3
7.4
Overview ................................................................... 7
Functional Block Diagram ......................................... 7
Feature Description................................................... 7
Device Functional Modes........................................ 10
8
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Applications ................................................ 11
8.3 Dos and Don'ts........................................................ 14
9 Power Supply Recommendations...................... 15
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Examples................................................... 15
11 Device and Documentation Support ................. 16
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Device Support......................................................
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
16
16
16
16
16
16
16
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
Changes from Revision A (April 2019) to Revision B
•
Page
Added LPG (TO-92) package to the data sheet .................................................................................................................... 1
Changes from Original (December 2017) to Revision A
Page
•
Added YBH (DSBGA) package to data sheet ........................................................................................................................ 1
•
Added recommendation to limit power supply voltage variation to less than 50 mVPP to Power Supply
Recommendations section ................................................................................................................................................... 15
2
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
VCC
OUT
DMR Package
4-Pin X2SON With Exposed Thermal Pad
Top View
4
1
1
VCC
GND
3
Thermal
Pad
2
3
NC
2
GND
OUT
Not to scale
YBH Package
4-Pin DSBGA
Top View
1
3
OUT
2
GND
1
VCC
NC
VCC
B
LPG Package
3-Pin TO-92
Top View
2
GND
A
Not to scale
OUT
Not to scale
Pin Functions
PIN
NAME
DSBGA SOT-23
X2SON
TO-92
I/O
DESCRIPTION
GND
A1
3
2
2
—
Ground reference
NC
A2
—
3
—
—
No-connect. This pin is not connected to the silicon. Leave this pin floating or
tied to ground, and soldered to the board for mechanical support.
OUT
B2
2
4
3
O
Push-pull CMOS output. Drives a VCC or ground level.
VCC
B1
1
1
1
—
2.5-V to 5.5-V power supply. TI recommends connecting this pin to a ceramic
capacitor to ground with a value of at least 0.01 µF.
Thermal
Pad
—
—
Thermal
Pad
—
—
Leave thermal pad floating or tied to ground, and soldered to the board for
mechanical support.
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
3
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Power-supply voltage
VCC
MIN
MAX
–0.3
5.5
UNIT
V
Power-supply voltage slew rate
VCC
Unlimited
VO
Output voltage
OUT
–0.3
VCC + 0.3
IO
Output current
OUT
–5
30
mA
B
Magnetic flux density
TJ
Operating junction temperature
140
°C
TA
Operating ambient temperature
Tstg
(1)
V/µs
Unlimited
T
For SOT-23 (DBZ), X2SON (DMR) and TO92 (LPG)
–40
135
For DSBGA (YBH)
–40
125
–65
150
Storage temperature
V
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±6000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±750
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Power supply voltage
VCC
2.5
5.5
VO
Output voltage
OUT
0
VCC
IO
Output current (1)
OUT
–5
20
mA
TJ
Operating junction temperature
140
°C
TA
(1)
4
Operating ambient temperature
For SOT-23 (DBZ), X2SON (DMR) and
TO-92 (LPG)
–40
135
For DSBGA (YBH)
-40
125
V
V
°C
Device-sourced current is negative. Device-sunk current is positive.
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
6.4 Thermal Information
DRV5011
THERMAL METRIC
(1)
DBZ
(SOT-23)
DMR
(X2SON)
YBH
(DSBGA)
LPG
(TO-92)
3 PINS
4 PINS
4 PINS
3 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
356
159
194.1
183.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
128
77
1.6
74.2
°C/W
RθJB
Junction-to-board thermal resistance
94
102
68
158.8
°C/W
ψJT
Junction-to-top characterization parameter
ψJB
Junction-to-board characterization parameter
(1)
11.4
0.9
0.8
15.2
°C/W
92
100
67.9
158.8
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
for VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ICC
Operating supply current
tON
Power-on time (see Figure 10)
td
Propagation delay time
From change in B to change in OUT
VOH
High-level output voltage
IO = –1 mA
VOL
Low-level output voltage
IO = 20 mA
MIN
VCC – 0.35
TYP
MAX
2.3
3
mA
40
70
µs
13
25
µs
VCC – 0.1
UNIT
V
0.15
0.4
TYP
MAX
V
6.6 Magnetic Characteristics
for VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
30
UNIT
fBW
Sensing bandwidth
kHz
BOP
Magnetic threshold operate point
(see Figure 8)
0.6
2
3.8
mT
BRP
Magnetic threshold release point
(see Figure 8)
–3.8
–2
–0.6
mT
BHYS
Magnetic hysteresis: |BOP – BRP|
2
4
6
mT
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
5
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
6.7 Typical Characteristics
0
Magnetic Threshold Release Point (mT)
Magnetic Threshold Operate Point (mT)
5
4
3
2
1
0
-40
-10
20
50
80
Temperature (qC)
110
-1
-2
-3
-4
-5
-40
135
-10
Figure 1. BOP vs Temperature
135
D004
0
Magnetic Threshold Release Point (mT)
Magnetic Threshold Operate Point (mT)
110
Figure 2. BRP vs Temperature
5
4
3
2
1
0
1.5
20
50
80
Temperature (qC)
D002
2.5
3.5
Supply Voltage (V)
4.5
5.5
-1
-2
-3
-4
-5
1.5
2.5
3.5
Supply Voltage (V)
D001
Figure 3. BOP vs VCC
4.5
5.5
D003
Figure 4. BRP vs VCC
Operating Supply Current (mA)
2.6
1.65 V
3V
5.5 V
2.5
2.4
2.3
2.2
2.1
2
-40
-10
20
50
80
Temperature (qC)
110
135
D005
Figure 5. ICC vs Temperature
6
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
7 Detailed Description
7.1 Overview
The DRV5011 is a magnetic sensor with a digital output that latches the most recent pole measured. Applying a
south magnetic pole near the top of the package causes the output to drive low, whereas a north magnetic pole
causes the output to drive high, and the absence of a magnetic field causes the output to continue to drive the
previous state, whether low or high.
The device integrates a Hall effect element, analog signal conditioning, offset cancellation circuits, amplifiers, and
comparators. This provides stable performance across a wide temperature range and resistance to mechanical
stress.
7.2 Functional Block Diagram
VCC
Voltage
Regulator
GND
REF
0.01 F
(minimum)
VCC
Element Bias
Offset
Cancellation
Output
Control
Amp
OUT
Temperature
Compensation
Copyright © 201 7, Texas Instrumen ts Incorpor ate d
7.3 Feature Description
7.3.1 Magnetic Flux Direction
The DRV5011 is sensitive to the magnetic field component that is perpendicular to the top of the package, as
shown in Figure 6.
TO-92
B
B
B
SOT-23
B
X2SON
DSBGA
PCB
Figure 6. Direction of Sensitivity
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
7
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
Feature Description (continued)
The magnetic flux that travels from the bottom to the top of the package is considered positive in this data sheet.
This condition exists when a south magnetic pole is near the top of the package. The magnetic flux that travels
from the top to the bottom of the package results in negative millitesla values. Figure 7 shows the flux direction
polarity.
positive B
negative B
N
S
S
N
PCB
PCB
Figure 7. Flux Direction Polarity
7.3.2 Magnetic Response
Figure 8 shows the device functionality and hysteresis.
OUT
VCC
BHYS
0V
B
north
BRP
0 mT
BOP
south
Figure 8. Device Functionality
8
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
Feature Description (continued)
7.3.3 Output Driver
Figure 9 shows the device push-pull CMOS output that can drive a VCC or ground level.
VCC
Output
Output
Control
Figure 9. Push-Pull Output (Simplified)
7.3.4 Power-On Time
Figure 10 shows that after the VCC voltage is applied, the DRV5011 measures the magnetic field and sets the
output within the tON time.
VCC
2.5 V
tON
time
Output
Invalid
Valid
time
Figure 10. tON Definition
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
9
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
Feature Description (continued)
7.3.5 Hall Element Location
The sensing element inside the device is in the center of both packages when viewed from the top. Figure 11
shows the tolerances and side-view dimensions.
SOT-23
Top View
SOT-23
Side View
centered
650 µm
±70 µm
±80 µm
X2SON
Top View
X2SON
Side View
centered
250 µm
±60 µm
±50 µm
DSBGA
Top View
DSBGA
Side View
centered
±20 µm
150 µm
±20 µm
TO-92
Top View
2 mm
2 mm
TO-92
Side View
1.54 mm
1.61 mm
1030 µm
±50 µm
±115 µm
Figure 11. Hall Element Location
7.4 Device Functional Modes
The DRV5011 has one mode of operation that applies when the Recommended Operating Conditions are met.
10
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5011 is typically used in rotary applications for brushless DC (BLDC) motor sensors or incremental
rotary encoding.
For reliable functionality, the magnet must apply a flux density at the sensor greater than the maximum BOP and
less than the minimum BRP thresholds. Add additional margin to account for mechanical tolerance, temperature
effects, and magnet variation. Magnets generally produce weaker fields as temperature increases.
8.2 Typical Applications
8.2.1 BLDC Motor Sensors Application
VCC
3
GPIOs
Outputs
VCC
DRV5011
Microcontroller
DRV5011
PWM
GPIOs
6 Gate Drivers
& MOSFETs
M
DRV5011
Copyright © 201 7, Texas Instrumen ts Incorpor ate d
Figure 12. BLDC Motor System
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 1.
Table 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Number of motor phases
3
Motor RPM
15 k
Number of magnet poles on the rotor
12
Magnetic material
Bonded Neodymium
Maximum temperature inside the motor
125°C
Magnetic flux density peaks at the Hall
sensors at maximum temperature
±11 mT
Hall sensor VCC
5 V ±10%
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
11
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
8.2.1.2 Detailed Design Procedure
Three-phase brushless DC motors often use three Hall effect latch devices to measure the electrical angle of the
rotor and tell the controller how to drive the three wires. These wires connect to electromagnet windings, which
generate magnetic fields that apply forces to the permanent magnets on the rotor.
Space the three Hall sensors across the printed-circuit board (PCB) so that they are 120 electrical degrees apart.
This configuration creates six 3-bit states with equal time duration for each electrical cycle, which consists of one
north and one south magnetic pole. From the center of the motor axis, the number of degrees to space each
sensor equals 2 / [number of poles] × 120°. In this design example, the first sensor is placed at 0°, the second
sensor is placed 20° rotated, and the third sensor is placed 40° rotated. Alternatively, a 3× degree offset can be
added or subtracted to any sensor, meaning the third sensor could alternatively be placed at
40° – (3 × 20°) = –20°.
8.2.1.3 Application Curve
U
Phase
Voltages
V
W
Hall 1
DRV5011
Outputs
Hall 2
Hall 3
Electrical Angle
Mechanical Angle
0°
0°
120°
240°
30°
360°
60°
.
Figure 13. Phase Voltages and Hall Signals for 3-Phase BLDC Motor
12
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
8.2.2 Incremental Rotary Encoding Application
VCC
VCC
DRV5011
VCC
OUT
Controller
GPIO
GPIO
GND
S
N
N
VCC
S
DRV5011
VCC
OUT
GND
Copyright © 201 7, Texas Instrumen ts Incorpor ate d
Figure 14. Incremental Rotary Encoding System
8.2.2.1 Design Requirements
For this design example, use the parameters listed in Table 2.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
RPM range
0 to 45 k
Number of magnet poles
8
Magnetic material
Ferrite
Air gap above the Hall sensors
2.5 mm
Magnetic flux density peaks at the Hall
sensors at maximum temperature
±7 mT
8.2.2.2 Detailed Design Procedure
Incremental encoders are used on knobs, wheels, motors, and flow meters to measure relative rotary movement.
By attaching a ring magnet to the rotating component and placing a DRV5011 nearby, the sensor generates
voltage pulses as the magnet turns. If directional information is also needed (clockwise versus counterclockwise),
a second DRV5011 can be added with a phase offset, and then the order of transitions between the two signals
describes the direction.
Creating this phase offset requires spacing the two sensors apart on the PCB, and an ideal 90° quadrature offset
is attained when the sensors are separated by half the length of each magnet pole, plus any integer number of
pole lengths. Figure 14 shows this configuration, as the sensors are 1.5 pole lengths apart. One of the sensors
changes its output every 360° / 8 poles / 2 sensors = 22.5° of rotation. For reference, TI Design TIDA-00480,
Automotive Hall Sensor Rotary Encoder, uses a 66-pole magnet with changes every 2.7°.
The maximum rotational speed that can be measured is limited by the sensor bandwidth. Generally, the
bandwidth must be faster than two times the number of poles per second. In this design example, the maximum
speed is 45000 RPM, which involves 6000 poles per second. The DRV5011 sensing bandwidth is 30 kHz, which
is five times the pole frequency. In systems where the sensor sampling rate is close to two times the number of
poles per second, most of the samples measure a magnetic field that is significantly lower than the peak value,
because the peaks only occur when the sensor and pole are perfectly aligned. In this case, add margin by
applying a stronger magnetic field that has peaks significantly higher than the maximum BOP.
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
13
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
8.2.2.3 Application Curve
Two signals in quadrature provide movement and direction information. Figure 15 shows how each 2-bit state
has unique adjacent 2-bit states for clockwise and counterclockwise.
Voltage
Sensor 1
Sensor 2
time
Figure 15. Quadrature Output (2-Bit)
8.3 Dos and Don'ts
The Hall element is sensitive to magnetic fields that are perpendicular to the top of the package; therefore, the
correct magnet orientation must be used for the sensor to detect the field. Figure 16 shows correct and incorrect
orientations when using a ring magnet.
CORRECT
N
S
N
N
S
S
N
S
S
N
N
S
INCORRECT
S
N
N
S
Figure 16. Correct and Incorrect Magnet Orientations
14
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
DRV5011
www.ti.com
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
9 Power Supply Recommendations
The DRV5011 is powered from 2.5-V to 5.5-V dc power supplies. A 0.01-μF (minimum) ceramic capacitor rated
for VCC must be placed as close to the DRV5011 device as possible. Larger values of the bypass capacitor may
be needed to attenuate any significant high-frequency ripple and noise components generated by the power
source. TI recommends limiting the supply voltage variation to less than 50 mVPP.
10 Layout
10.1 Layout Guidelines
Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall
effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice.
Magnetic fields also easily pass through most PCBs, which makes placing the magnet on the opposite side
possible.
10.2 Layout Examples
VCC
VCC
OUT
GND
GND
NC
VCC
OUT
Thermal
Pad
VCC
OUT
GND
DSBGA
SOT-23
GND
OUT
NC
X2SON
TO-92
Figure 17. Layout Examples
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
15
DRV5011
SLVSCY6B – DECEMBER 2017 – REVISED JANUARY 2020
www.ti.com
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
For additional design reference, see the Automotive Hall Sensor Rotary Encoder TI design (TIDA-00480).
TI also offers the following evaluation modules (EVMs) for the DRV5011:
• Texas Instruments, DRV5011 Ultra-Low Power, Digital-Latch Hall Effect Sensor Evaluation Module
• Texas Instruments, Breakout Adapter for SOT-23 and TO-92 Hall Sensor Evaluation
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
• DRV5011-5012EVM user's guide
• HALL-ADAPTER-EVM user's guide
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
Submit Documentation Feedback
Copyright © 2017–2020, Texas Instruments Incorporated
Product Folder Links: DRV5011
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV5011ADDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 135
1AD
DRV5011ADDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 135
1AD
DRV5011ADDMRR
ACTIVE
X2SON
DMR
4
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 135
1AD
DRV5011ADDMRT
ACTIVE
X2SON
DMR
4
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 135
1AD
DRV5011ADLPG
ACTIVE
TO-92
LPG
3
1000
RoHS & Green
SN
N / A for Pkg Type
-40 to 135
11AD
DRV5011ADLPGM
ACTIVE
TO-92
LPG
3
3000
RoHS & Green
SN
N / A for Pkg Type
-40 to 135
11AD
DRV5011ADYBHR
ACTIVE
DSBGA
YBH
4
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
A
DRV5011ADYBHT
ACTIVE
DSBGA
YBH
4
250
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 125
A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
