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DRV5013
SLIS150K – MARCH 2014 – REVISED AUGUST 2019
DRV5013 Digital-Latch Hall Effect Sensor
1 Features
2 Applications
•
•
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•
•
1
•
•
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Digital bipolar-latch Hall sensor
Superior temperature stability
– BOP ±10% over temperature
Multiple sensitivity options (BOP / BRP)
– ±1.3 mT (FA, see Device Nomenclature)
– ±2.7 mT (AD, see Device Nomenclature)
– ±6 mT (AG, see Device Nomenclature)
– ±12 mT (BC, see Device Nomenclature)
Supports a wide voltage range
– 2.5 V to 38 V
– No external regulator required
Wide operating temperature range
– TA = –40 to +125°C (Q, see Device
Nomenclature)
– TA = –40 to +150°C (E, see Device
Nomenclature)
Open-drain output (30-mA sink)
Fast 35-µs power-on time
Small package and footprint
– Surface mount 3-pin SOT-23 (DBZ)
– 2.92 mm × 2.37 mm
– Through-hole 3-pin TO-92 (LPG, LPE)
– 4.00 mm × 3.15 mm
Protection features
– Reverse supply protection (up to –22 V)
– Supports up to 40-V load dump
– Output short-circuit protection
– Output current limitation
Power tools
Flow meters
Valve and solenoid status
Brushless dc motors
Proximity sensing
Tachometers
3 Description
The DRV5013 device is a chopper-stabilized Hall
effect sensor that offers a magnetic sensing solution
with superior sensitivity stability over temperature and
integrated protection features.
The magnetic field is indicated via a digital bipolar
latch output. The IC has an open-drain output stage
with 30-mA current sink capability. A wide operating
voltage range from 2.5 V to 38 V with reverse polarity
protection up to –22 V makes the device suitable for
a wide range of industrial applications.
Internal protection functions are provided for reverse
supply conditions, load dump, and output short circuit
or overcurrent.
Device Information(1)
PART NUMBER
DRV5013
PACKAGE
BODY SIZE (NOM)
SOT-23 (3)
2.92 mm × 1.30 mm
TO-92 (3)
4.00 mm × 3.15 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Output State
Device Packages
OUT
Bhys
B (mT)
BRP
(North)
BOF
BOP
(South)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV5013
SLIS150K – MARCH 2014 – REVISED AUGUST 2019
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
5
5
5
5
6
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Magnetic Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 15
8
Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 Device and Documentation Support ................. 20
11.1
11.2
11.3
11.4
11.5
11.6
Device Support......................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
21
21
21
21
21
12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision J (June 2019) to Revision K
Page
•
Changed TJ to show existing range is for Q version device in the Absolute Maximum Ratings table................................... 5
•
Added E version for TJ to the Absolute Maximum Ratings table ........................................................................................... 5
•
Changed TA to show existing range is for Q version device in the Recommended Operating Conditions table ................... 5
•
Added E version for TA to the Recommended Operating Conditions table............................................................................ 5
•
Changed ICC test condition for TA from 125 to TA,MAX to highlight the differences between the E and Q version devices..... 6
•
Changed rDS(on) test condition for TA from 125 to TA,MAX to highlight the difference between the E and Q version devices .. 6
•
Changed all test conditions for TA max from 125 to TA,MAX to highlight difference between the E and Q devices ............... 7
•
Added new condition statement to Typical Characteristics section........................................................................................ 8
•
Added data up to 150°C to Figure 1, Figure 2, Figure 4, Figure 6, Figure 8, and Figure 10................................................. 8
Changes from Revision I (August 2018) to Revision J
•
Added TO-92 (LPE) package to data sheet .......................................................................................................................... 1
Changes from Revision H (September 2016) to Revision I
•
Page
Changed Power Supply Recommendations section ........................................................................................................... 19
Changes from Revision G (August 2016) to Revision H
•
Page
Page
Changed the power-on time for the FA version in the Electrical Characteristics table .......................................................... 6
Changes from Revision F (May 2016) to Revision G
Page
•
Changed the maximum BOP and the minimum BRP for the FA version in the Magnetic Characteristics table....................... 7
•
Added the Layout section ..................................................................................................................................................... 19
2
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Changes from Revision E (February 2016) to Revision F
•
Page
Revised preliminary limits for the FA version ......................................................................................................................... 7
Changes from Revision D (December 2015) to Revision E
Page
•
Added the FA device option ................................................................................................................................................... 1
•
Added the typical bandwidth value to Magnetic Characteristics table ................................................................................... 7
Changes from Revision C (September 2014) to Revision D
Page
•
Corrected body size of SOT-23 package and SIP package name to TO-92 ........................................................................ 1
•
Added BMAX to Absolute Maximum Ratings ........................................................................................................................... 5
•
Removed table note from junction temperature .................................................................................................................... 5
•
Updated package tape and reel options for M and blank ................................................................................................... 20
•
Added Community Resources.............................................................................................................................................. 21
Changes from Revision B (July 2014) to Revision C
Page
•
Updated high sensitivity options ............................................................................................................................................ 1
•
Changed the max operating junction temperature to 150°C ................................................................................................. 5
•
Updated the output rise and fall time typical values and removed max values in Switching Characteristics ....................... 6
•
Updated the values in Magnetic Characteristics ................................................................................................................... 7
•
Updated all Typical Characteristics graphs ........................................................................................................................... 8
•
Updated Equation 4 ............................................................................................................................................................. 17
•
Updated Figure 24 ............................................................................................................................................................... 20
Changes from Revision A (March 2014) to Revision B
Page
•
Changed IOCP MIN and MAX values from 20 and 40 to 15 and 45, respectively, in the Electrical Characteristics ............... 6
•
Updated the hysteresis values for each device option in the Magnetic Characteristics table................................................ 7
•
Changed the MIN value for the ±2.3 mt BRP parameter from –4 to –5 in the Magnetic Characteristics table ...................... 7
Changes from Original (March 2014) to Revision A
Page
•
Changed all references to Hall IC to Hall Effect Sensor ....................................................................................................... 1
•
Changed RPM Meter to Tachometers in the Applications list ............................................................................................... 1
•
Changed the power-on value from 50 to 35 µs in the Features list ...................................................................................... 1
•
Changed the type of the OUT terminal from OD to Output in the Pin Functions table ......................................................... 4
•
Deleted Output pin current and changed VCCmax to VCC after the voltage ramp rate for the supply voltage........................ 5
•
Changed RO to R1 in the test conditions for tr and tf in the Switching Characteristics table.................................................. 6
•
Added the bandwidth parameter to Magnetic Characteristics table ...................................................................................... 7
•
Changed the MIN value for the ±2.3 mt BRP parameter from +2.3 to –2.3 in the Magnetic Characteristics table ................ 7
•
Deleted condition statement from the Typical Characteristics and changed all TJ to TA in the graph conditions ................. 8
•
Deleted Number from the Power-On Time case names; added conditions to captions of case timing diagrams .............. 12
•
Added the R1 tradeoff and lower current text after the equation in the Output Stage section ........................................... 14
•
Added the C2 not required for most applications text after the second equation in the Output Stage section.................... 14
•
Changed IO to ISINK in condition statement of FET overload fault condition in Reverse Supply Protection section ............. 15
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5 Pin Configuration and Functions
For additional configuration information, see Device Markings and Mechanical, Packaging, and Orderable
Information.
DBZ Package
3-Pin SOT-23
Top View
LPG and LPE Packages
3-Pin TO-92
Top View
OUT
2
3
GND
1
1
2
3
VCC
VCC
OUT
GND
Pin Functions
PIN
NAME
TYPE
DESCRIPTION
DBZ
LPG, LPE
GND
3
2
Ground
Ground pin
OUT
2
3
Output
Hall sensor open-drain output. The open drain requires a resistor pullup.
VCC
1
1
Power
2.5 V to 38 V power supply. Bypass this pin to the GND pin with a 0.01-µF (minimum)
ceramic capacitor rated for VCC.
4
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
Power supply voltage
Voltage ramp rate (VCC), VCC < 5 V
Output pin voltage
Output pin reverse current during reverse supply condition
Magnetic flux density, BMAX
V
V/µs
0
2
–0.5
40
V
0
100
mA
Unlimited
Operating junction temperature, TJ
Q, see Figure 24
–40
150
E, see Figure 24
–40
175
–65
150
Storage temperature, Tstg
(2)
UNIT
40
Unlimited
Voltage ramp rate (VCC), VCC > 5 V
(1)
MAX
–22 (2)
VCC
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Specified by design. Only tested to –20 V.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2500
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Power supply voltage
2.5
38
VO
Output pin voltage (OUT)
0
38
V
ISINK
Output pin current sink (OUT) (1)
0
30
mA
TA
Operating ambient
temperature
Q, see Figure 24
–40
125
E, see Figure 24
–40
150
(1)
V
°C
Power dissipation and thermal limits must be observed.
6.4 Thermal Information
DRV5013
THERMAL METRIC (1)
DBZ (SOT-23)
LPG, LPE (TO-92)
3 PINS
3 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
333.2
180
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
99.9
98.6
°C/W
RθJB
Junction-to-board thermal resistance
66.9
154.9
°C/W
ψJT
Junction-to-top characterization parameter
4.9
40
°C/W
ψJB
Junction-to-board characterization parameter
65.2
154.9
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLIES (VCC)
VCC
VCC operating voltage
ICC
Operating supply current
ton
Power-on time
2.5
38
VCC = 2.5 V to 38 V, TA = 25°C
VCC = 2.5 V to 38 V, TA = TA,
2.7
(1)
3
3.5
AD, AG, BC versions
35
50
FA version
35
70
MAX
V
mA
µs
OPEN DRAIN OUTPUT (OUT)
rDS(on)
FET on-resistance
Ilkg(off)
Off-state leakage current
VCC = 3.3 V, IO = 10 mA, TA = 25°C
VCC = 3.3 V, IO = 10 mA, TA = TA,
MAX
22
(1)
36
50
Output Hi-Z
Ω
1
µA
45
mA
PROTECTION CIRCUITS
VCCR
Reverse supply voltage
IOCP
Overcurrent protection level
(1)
TA,
MAX
–22
OUT shorted VCC
V
15
30
is 125°C for Q devices and 150°C for E devices (see Figure 24).
6.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
13
25
UNIT
OPEN DRAIN OUTPUT (OUT)
td
Output delay time
B = BRP – 10 mT to BOP + 10 mT in 1 µs
tr
Output rise time (10% to 90%)
R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V
200
ns
tf
Output fall time (90% to 10%)
R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V
31
ns
6
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6.7 Magnetic Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
ƒBW
TEST CONDITIONS
Bandwidth (2)
MIN
TYP
20
30
MAX
UNIT (1)
kHz
DRV5013FA: ±1.3 mT
BOP
Operate point; see Figure 12
–0.6
1.3
3.4
mT
BRP
Release point; see Figure 12
–3.4
–1.3
0.6
mT
Bhys
Hysteresis; Bhys = (BOP – BRP)
1.2
2.6
BO
Magnetic offset; BO = (BOP + BRP) / 2
–1.5
0
TA = –40°C to TA,MAX (3)
mT
1.5
mT
DRV5013AD: ±2.7 mT
BOP
Operate point; see Figure 12
1
2.7
5
mT
BRP
Release point; see Figure 12
–5
–2.7
–1
mT
Bhys
Hysteresis; Bhys = (BOP – BRP)
BO
Magnetic offset; BO = (BOP + BRP) / 2
TA = –40°C to TA,MAX (3)
5.4
–1.5
0
mT
1.5
mT
DRV5013AG: ±6 mT
BOP
Operate point; see Figure 12
3
6
9
mT
BRP
Release point; see Figure 12
–9
–6
–3
mT
Bhys
Hysteresis; Bhys = (BOP – BRP)
BO
Magnetic offset; BO = (BOP + BRP) / 2
TA = –40°C to TA,MAX (3)
12
–1.5
mT
0
1.5
mT
DRV5013BC: ±12 mT
BOP
Operate point; see Figure 12
6
12
18
mT
BRP
Release point; see Figure 12
–18
–12
–6
mT
Bhys
Hysteresis; Bhys = (BOP – BRP)
BO
Magnetic offset; BO = (BOP + BRP) / 2
(1)
(2)
(3)
TA = –40°C to TA,MAX (3)
24
–1.5
0
mT
1.5
mT
1 mT = 10 Gauss.
Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output.
TA, MAX is 125°C for Q devices and 150°C for E devices (see Figure 24).
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6.8 Typical Characteristics
TA > 125°C data are valid for E temperature range devices only, see Figure 24
3.5
3.5
3
2.5
10
20
Supply Voltage (V)
30
3
2.5
2
-50
2
0
VCC = 2.5 V
VCC = 3.3 V
VCC = 13.2 V
VCC = 38 V
TA = 125°C
TA = 150°C
Supply Current (mA)
Supply Current (mA)
TA ± ƒ&
TA = 25°C
TA = 75°C
40
-25
0
D009
Magnetic Field Operate Point BOP (mT)
Magnetic Field Operate Point BOP (mT)
150
D010
14
12
10
DRV5013AD
DRV5013AG
DRV5013BC
8
6
4
2
0
0
10
20
Supply Voltage (V)
30
12
10
DRV5013AD
DRV5013AG
DRV5013BC
8
6
4
2
0
-50
40
-25
0
D001
TA = 25°C
25
50
75
100
Ambient Temperature (°C)
125
150
D002
VCC = 3.3 V
Figure 3. BOP vs VCC
Figure 4. BOP vs Temperature
0
Magnetic Field Operate Point BRP (mT)
0
Magnetic Field Release Point BRP (mT)
125
Figure 2. ICC vs Temperature
Figure 1. ICC vs VCC
14
-2
-4
-6
-8
DRV5013AD
DRV5013AG
DRV5013BC
-10
-12
-14
0
10
20
Supply Voltage (V)
TA = 25°C
30
40
-2
-4
-6
DRV5013AD
DRV5013AG
DRV5013BC
-8
-10
-12
-14
-50
-25
0
D003
25
50
75
100
Ambient Temperature (°C)
125
150
D004
VCC = 3.3 V
Figure 5. BRP vs VCC
8
25
50
75
100
Ambient Temperature (qC)
Figure 6. BRP vs Temperature
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Typical Characteristics (continued)
30
30
25
25
20
Hysteresis (mT)
Hysteresis (mT)
TA > 125°C data are valid for E temperature range devices only, see Figure 24
DRV5013AD
DRV5013AG
DRV5013BC
15
10
5
20
DRV5013AD
DRV5013AG
DRV5013BC
15
10
5
0
0
10
20
Supply Voltage (V)
30
0
-50
40
TA = 25°C
0
25
50
75
100
Ambient Temperature (°C)
125
150
D008
VCC = 3.3 V
Figure 7. Hysteresis vs VCC
Figure 8. Hysteresis vs Temperature
0.25
0.25
DRV5013AD
DRV5013AG
DRV5013BC
DRV5013AD
DRV5013AG
DRV5013BC
0.125
Offset (mT)
0.125
Offset (mT)
-25
D007
0
-0.125
0
-0.125
-0.25
0
10
20
Supply Voltage (V)
TA = 25°C
30
40
-0.25
-50
-25
0
D005
25
50
75
100
Ambient Temperature (°C)
125
150
D006
VCC = 3.3 V
Figure 9. Offset vs VCC
Figure 10. Offset vs Temperature
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7 Detailed Description
7.1 Overview
The DRV5013 device is a chopper-stabilized Hall sensor with a digital latched output for magnetic sensing
applications. The DRV5013 device can be powered with a supply voltage between 2.5 and 38 V, and
continuously survives continuous –22-V reverse-battery conditions. The DRV5013 device does not operate when
–22 to 2.4 V is applied to the VCC pin (with respect to the GND pin). In addition, the device can withstand
voltages up to 40 V for transient durations.
The field polarity is defined as follows: a south pole near the marked side of the package is a positive magnetic
field. A north pole near the marked side of the package is a negative magnetic field.
The output state is dependent on the magnetic field perpendicular to the package. A south pole near the marked
side of the package causes the output to pull low (operate point, BOP), and a north pole near the marked side of
the package causes the output to release (release point, BRP). Hysteresis is included in between the operate
point and the release point therefore magnetic-field noise does not accidentally trip the output.
An external pullup resistor is required on the OUT pin. The OUT pin can be pulled up to VCC, or to a different
voltage supply. This allows for easier interfacing with controller circuits.
7.2 Functional Block Diagram
2.5 to 38 V
C1
VCC
Regulated Supply
Bias
R1
Temperature
Compensation
OUT
C2
OCP
Offset Cancel
Hall Element
(Optional)
+
Gate
Drive
±
Reference
GND
10
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7.3 Feature Description
7.3.1 Field Direction Definition
A positive magnetic field is defined as a south pole near the marked side of the package as shown in Figure 11.
SOT-23 (DBZ)
TO-92 (LPG, LPE)
B > 0 mT
B < 0 mT
B > 0 mT
B < 0 mT
N
S
N
S
S
N
S
N
1
2
3
1
2
3
(Bottom view)
N = North pole, S = South pole
Figure 11. Field Direction Definition
7.3.2 Device Output
If the device is powered on with a magnetic field strength between BRP and BOP, then the device output is
indeterminate and can either be Hi-Z or Low. If the field strength is greater than BOP, then the output is pulled
low. If the field strength is less than BRP, then the output is released.
OUT
Bhys
BRP (North)
BOF
BOP (South)
B (mT)
Figure 12. DRV5013—BOP > 0
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Feature Description (continued)
7.3.3 Power-On Time
After applying VCC to the DRV5013 device, ton must elapse before the OUT pin is valid. During the power-up
sequence, the output is Hi-Z. A pulse as shown in Figure 13 and Figure 14 occurs at the end of ton. This pulse
can allow the host processor to determine when the DRV5013 output is valid after startup. In Case 1 (Figure 13)
and Case 2 (Figure 14), the output is defined assuming a constant magnetic field B > BOP and B < BRP.
VCC
t (s)
B (mT)
BOP
BRP
t (s)
OUT
Valid Output
t (s)
ton
Figure 13. Case 1: Power On When B > BOP
VCC
t (s)
B (mT)
BOP
BRP
t (s)
OUT
Valid Output
t (s)
ton
Figure 14. Case 2: Power On When B < BRP
12
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Feature Description (continued)
If the device is powered on with the magnetic field strength BRP < B < BOP, then the device output is
indeterminate and can either be Hi-Z or pulled low. During the power-up sequence, the output is held Hi-Z until
ton has elapsed. At the end of ton, a pulse is given on the OUT pin to indicate that ton has elapsed. After ton, if the
magnetic field changes such that BOP < B, the output is released. Case 3 (Figure 15) and Case 4 (Figure 16)
show examples of this behavior.
VCC
t (s)
B (mT)
BOP
BRP
t (s)
OUT
Valid Output
t (s)
ton
td
Figure 15. Case 3: Power On When BRP < B < BOP, Followed by B > BOP
VCC
t (s)
B (mT)
BOP
BRP
t (s)
OUT
Valid Output
t (s)
ton
td
Figure 16. Case 4: Power On When BRP < B < BOP, Followed by B < BRP
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Feature Description (continued)
7.3.4 Output Stage
Figure 17 shows the DRV5013 open-drain NMOS output structure, rated to sink up to 30 mA of current. For
proper operation, calculate the value of pullup resistor R1 using Equation 1.
Vref max
V min
d R1 d ref
30 mA
100 µA
(1)
The size of R1 is a tradeoff between the OUT rise time and the current when OUT is pulled low. A lower current
is generally better, however faster transitions and bandwidth require a smaller resistor for faster switching.
In addition, make sure that the value of R1 > 500 Ω so that the output driver can pull the OUT pin close to GND.
NOTE
Vref is not restricted to VCC. The allowable voltage range of this pin is specified in the
Absolute Maximum Ratings.
Vref
R1
OUT
ISINK
OCP
C2
Gate
Drive
GND
Figure 17. NMOS Open-Drain Output
Select a value for C2 based on the system bandwidth specifications as shown in Equation 2.
1
u ¦BW +]
2S u R1 u C2
(2)
Most applications do not require this C2 filtering capacitor.
14
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Feature Description (continued)
7.3.5 Protection Circuits
The DRV5013 device is fully protected against overcurrent and reverse-supply conditions. Table 1 lists a
summary of the protection circuits.
Table 1. Protection Circuit Summary
FAULT
CONDITION
DEVICE
FET overload (OCP)
ISINK ≥ IOCP
Operating
Output current is clamped to IOCP
DESCRIPTION
RECOVERY
Load dump
38 V < VCC < 40 V
Operating
Device will operate for a transient duration
VCC ≤ 38 V
Reverse supply
–22 V < VCC < 0 V
Disabled
Device will survive this condition
VCC ≥ 2.5 V
IO < IOCP
7.3.5.1 Overcurrent Protection (OCP)
An analog current-limit circuit limits the current through the FET. The driver current is clamped to IOCP. During
this clamping, the rDS(on) of the output FET is increased from the nominal value.
7.3.5.2 Load Dump Protection
The DRV5013 device operates at DC VCC conditions up to 38 V nominally, and can additionally withstand VCC =
40 V. No current-limiting series resistor is required for this protection.
7.3.5.3 Reverse Supply Protection
The DRV5013 device is protected in the event that the VCC pin and the GND pin are reversed (up to –22 V).
NOTE
In a reverse supply condition, the OUT pin reverse-current must not exceed the ratings
specified in the Absolute Maximum Ratings.
7.4 Device Functional Modes
The DRV5013 device is active only when VCC is between 2.5 and 38 V.
When a reverse supply condition exists, the device is inactive.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5013 device is used in magnetic-field sensing applications.
8.2 Typical Applications
8.2.1 Standard Circuit
C2
680 pF
(Optional)
2
OUT
R1
10 kŸ
3
1
VCC
VCC
C1
0.01 µF
(minimum)
Figure 18. Typical Application Circuit
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the input parameters.
Table 2. Design Parameters
DESIGN PARAMETER
REFERENCE
EXAMPLE VALUE
Supply voltage
VCC
3.2 to 3.4 V
System bandwidth
ƒBW
10 kHz
8.2.1.2 Detailed Design Procedure
Table 3. External Components
COMPONENT
(1)
16
PIN 1
PIN 2
RECOMMENDED
C1
VCC
GND
A 0.01-µF (minimum) ceramic capacitor rated for VCC
C2
OUT
GND
Optional: Place a ceramic capacitor to GND
R1
OUT
REF (1)
Requires a resistor pullup
REF is not a pin on the DRV5013 device, but a REF supply-voltage pullup is required for the OUT pin; the OUT pin may be pulled up to
VCC.
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8.2.1.2.1 Configuration Example
In a 3.3-V system, 3.2 V ≤ Vref ≤ 3.4 V. Use Equation 3 to calculate the allowable range for R1.
Vref max
V min
d R1 d ref
30 mA
100 µA
(3)
For this design example, use Equation 4 to calculate the allowable range of R1.
3.4 V
3.2 V
d R1 d
30 mA
100 µA
(4)
Therefore:
113 Ω ≤ R1 ≤ 32 kΩ
(5)
After finding the allowable range of R1 (Equation 5), select a value between 500 Ω and 32 kΩ for R1.
Assuming a system bandwidth of 10 kHz, use Equation 6 to calculate the value of C2.
1
u ¦BW +]
2S u R1 u C2
(6)
For this design example, use Equation 7 to calculate the value of C2.
1
2 u 10 kHz
2S u R1 u C2
(7)
An R1 value of 10 kΩ and a C2 value less than 820 pF satisfy the requirement for a 10-kHz system bandwidth.
A selection of R1 = 10 kΩ and C2 = 680 pF would cause a low-pass filter with a corner frequency of 23.4 kHz.
8.2.1.3 Application Curves
OUT
OUT
R1 = 10 kΩ pull-up
No C2
R1 = 10-kΩ pull-up
Figure 19. 10-kHz Switching Magnetic Field
C2 = 680 pF
Figure 20. 10-kHz Switching Magnetic Field
0
-2
Magnitude (dB)
-4
-6
-8
-10
-12
-14
100
1000
10000
Frequency (Hz)
R1 = 10-kΩ pull-up
100000
D011
C2 = 680 pF
Figure 21. Low-Pass Filtering
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8.2.2 Alternative Two-Wire Application
For systems that require minimal wire count, the device output can be connected to VCC through a resistor, and
the total supplied current can be sensed near the controller.
R1
+
OUT 2
±
VCC 1
C1
GND
3
Current
sense
Controller
Figure 22. 2-Wire Application
Current can be sensed using a shunt resistor or other circuitry.
8.2.2.1 Design Requirements
Table 4 lists the related design parameters.
Table 4. Design Parameters
REFERENCE
EXAMPLE VALUE
Supply voltage
DESIGN PARAMETER
VCC
12 V
OUT resistor
R1
1 kΩ
Bypass capacitor
C1
0.1 µF
Current when B < BRP
IRELEASE
About 3 mA
Current when B > BOP
IOPERATE
About 15 mA
8.2.2.2 Detailed Design Procedure
When the open-drain output of the device is high-impedance, current through the path equals the ICC of the
device (approximately 3 mA).
When the output pulls low, a parallel current path is added, equal to VCC / (R1 + rDS(on)). Using 12 V and 1 kΩ,
the parallel current is approximately 12 mA, making the total current approximately 15 mA.
The local bypass capacitor C1 should be at least 0.1 µF, and a larger value if there is high inductance in the
power line interconnect.
18
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9 Power Supply Recommendations
The DRV5013 device is designed to operate from an input voltage supply (VM) range between 2.5 V and 38 V. A
0.01-µF (minimum) ceramic capacitor rated for VCC must be placed as close to the DRV5013 device as possible.
Larger values of the bypass capacitor may be needed to attenuate any significant high-frequency ripple and
noise components generated by the power source. TI recommends limiting the supply voltage variation to less
than 50 mVPP.
10 Layout
10.1 Layout Guidelines
The bypass capacitor should be placed near the DRV5013 device for efficient power delivery with minimal
inductance. The external pullup resistor should be placed near the microcontroller input to provide the most
stable voltage at the input; alternatively, an integrated pullup resistor within the GPIO of the microcontroller can
be used.
Generally, using PCB copper planes underneath the DRV5013 device has no effect on magnetic flux, and does
not interfere with device performance. This is because copper is not a ferromagnetic material. However, If nearby
system components contain iron or nickel, they may redirect magnetic flux in unpredictable ways.
10.2 Layout Example
VCC
OUT
GND
Figure 23. DRV5013 Layout Example
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
Figure 24 shows a legend for reading the complete device name for and DRV5013 device.
DRV5013
(AD)
(Q)
(DBZ)
(R)
()
Prefix
DRV5013: Digital latch Hall sensor
AEC-Q100
Q1: Automotive qualification
Blank: Non-auto
BOP/BRP
FA: 1.3/±1.3 mT
AD: 2.7/±2.7 mT
AG: 6/±6 mT
BC: 12/±12 mT
Tape and Reel
R: 3000 pcs/reel
T: 250 pcs/reel
M: 3000 pcs/box (ammo)
Blank: 1000 pcs/bag (bulk)
Package
DBZ: 3-pin SOT-23
LPG: 3-pin TO-92
LPE: 3-pin TO-92
Temperature Range
Q: ±40 to 125°C
E: ±40 to 150°C
Figure 24. Device Nomenclature
11.1.2 Device Markings
Marked Side
3
Marked Side Front
1
1
2
3
2
Marked Side
1
2
3
(Bottom view)
Figure 25. SOT-23 (DBZ) Package
Figure 26. TO-92 (LPG, LPE) Package
indicates the Hall effect sensor (not to scale). The Hall element is located in the center of the package with a
tolerance of ±100 µm. The height of the Hall element from the bottom of the package is 0.7 mm ±50 µm in the DBZ
package, and 0.987 mm ±50 µm in the LPG and LPE packages.
20
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11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates — go to the product folder for your device on ti.com. In the
upper right-hand corner, click the Alert me button to register and receive a weekly digest of product information
that has changed (if any). For change details, check the revision history of any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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29-Apr-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV5013ADQDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
(+NLAD, 13AD, 1J52
)
DRV5013ADQDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
+NLAD
DRV5013ADQLPG
ACTIVE
TO-92
LPG
3
1000
RoHS & Green
SN
N / A for Pkg Type
-40 to 125
+NLAD
DRV5013ADQLPGM
ACTIVE
TO-92
LPG
3
3000
RoHS & Green
SN
N / A for Pkg Type
-40 to 125
+NLAD
DRV5013AGQDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
(+NLAG, 13AG, 1IW2
)
DRV5013AGQDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
(+NLAG, 13AG, 1IW2
)
DRV5013AGQLPG
ACTIVE
TO-92
LPG
3
1000
RoHS & Green
SN
N / A for Pkg Type
-40 to 125
+NLAG
DRV5013AGQLPGM
ACTIVE
TO-92
LPG
3
3000
RoHS & Green
SN
N / A for Pkg Type
-40 to 125
+NLAG
DRV5013BCELPE
ACTIVE
TO-92
LPE
3
1000
RoHS & Green
SN
N / A for Pkg Type
-40 to 150
1UVJ
DRV5013BCELPEM
ACTIVE
TO-92
LPE
3
3000
RoHS & Green
SN
N / A for Pkg Type
-40 to 150
1UVJ
DRV5013BCQDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
(+NLBC, 1IX2)
DRV5013BCQDBZT
ACTIVE
SOT-23
DBZ
3
250
RoHS & Green
NIPDAUAG | SN
Level-1-260C-UNLIM
-40 to 125
(+NLBC, 1IX2)
DRV5013BCQLPG
ACTIVE
TO-92
LPG
3
1000
RoHS & Green
SN
N / A for Pkg Type
-40 to 125
+NLBC
DRV5013BCQLPGM
ACTIVE
TO-92
LPG
3
3000
RoHS & Green
SN
N / A for Pkg Type
-40 to 125
+NLBC
DRV5013FAQDBZR
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
(+NLFA, 13FA, 1IZ2
)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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29-Apr-2022
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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