DRV5053RAQDBZT

Product Folder Order Now Support & Community Tools & Software Technical Documents DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 DRV5053 Analog-Bipolar Hall Effect Sensor 1 Features 2 Applications • • • • • • 1 • • • • • • • • Linear Output Hall Sensor Superior Temperature Stability – Sensitivity ±10% Over Temperature High Sensitivity Options: – –11 mV/mT (OA, See Figure 17) – –23 mV/mT (PA) – –45 mV/mT (RA) – –90 mV/mT (VA) – +23 mV/mT (CA) – +45 mV/mT (EA) Supports a Wide Voltage Range – 2.5 to 38 V – No External Regulator Required Wide Operating Temperature Range – TA = –40 to 125°C (Q, see Figure 17) Amplified Output Stage – 2.3-mA Sink, 300 µA Source Output Voltage: 0.2 ~ 1.8 V – B = 0 mT, OUT = 1 V Fast Power-On: 35 µs Small Package and Footprint – Surface Mount 3-Pin SOT-23 (DBZ) – 2.92 mm × 2.37 mm – Through-Hole 3-Pin TO-92 (LPG) – 4.00 mm × 3.15 mm Protection Features – Reverse Supply Protection (up to –22 V) – Supports up to 40-V Load Dump – Output Short-Circuit Protection – Output Current Limitation Output State Flow Meters Docking Adjustment Vibration Correction Damper Controls 3 Description The DRV5053 device is a chopper-stabilized Hall IC that offers a magnetic sensing solution with superior sensitivity stability over temperature and integrated protection features. The 0- to 2-V analog output responds linearly to the applied magnetic flux density, and distinguishes the polarity of magnetic field direction. A wide operating voltage range from 2.5 to 38 V with reverse polarity protection up to –22 V makes the device suitable for a wide range of industrial and consumer applications. Internal protection functions are provided for reverse supply conditions, load dump, and output short circuit or overcurrent. Device Information(1) PART NUMBER DRV5053 PACKAGE BODY SIZE (NOM) SOT-23 (3) 2.92 mm × 1.30 mm TO-92 (3) 4.00 mm × 3.15 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Device Packages VOUT (V) VMAX VQ VMIN BMIN (N) B (mT) BMAX (S) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 4 4 4 4 5 5 5 7 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Switching Characteristics .......................................... Magnetic Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 8 7.1 7.2 7.3 7.4 8 Overview ................................................................... 8 Functional Block Diagram ......................................... 8 Feature Description................................................... 9 Device Functional Modes........................................ 11 Application and Implementation ........................ 12 8.1 Application Information............................................ 12 8.2 Typical Applications ................................................ 12 9 Power Supply Recommendations...................... 14 10 Device and Documentation Support ................. 15 10.1 10.2 10.3 10.4 10.5 Device Support...................................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 15 16 16 16 16 11 Mechanical, Packaging, and Orderable Information ........................................................... 16 4 Revision History Changes from Revision B (September 2014) to Revision C Page • Corrected body size of SOT-23 package and SIP package name to TO-92 ........................................................................ 1 • Added BMAX to Absolute Maximum Ratings ........................................................................................................................... 4 • Removed table note from junction temperature .................................................................................................................... 4 • Updated the typical value for BN and VN for each version...................................................................................................... 5 • Updated Figure 6 ................................................................................................................................................................... 7 • Updated the Functional Block Diagram ................................................................................................................................. 8 • Updated Output Stage ......................................................................................................................................................... 11 • Updated package tape and reel options for M and blank ................................................................................................... 15 • Added Community Resources.............................................................................................................................................. 16 Changes from Revision A (August 2014) to Revision B Page • Updated high sensitivity options ............................................................................................................................................ 1 • Updated the sensitivity device values and typicals. Updated typical and max values for DRV5053VA: –80 mV/mT .......... 6 • Updated Typical Characteristics graphs ................................................................................................................................ 7 Changes from Original (May 2014) to Revision A Page • Updated device status to production data ............................................................................................................................. 1 • Changed the maximum TJ value from 175°C to 150°C ......................................................................................................... 4 • Updated Magnetic Characteristics table. ............................................................................................................................... 5 2 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 5 Pin Configuration and Functions For additional configuration information, see Device Markings and Mechanical, Packaging, and Orderable Information. DBZ Package 3-Pin SOT-23 Top View LPG Package 3-Pin TO-92 Top View OUT 2 3 GND 1 1 2 3 VCC VCC OUT GND Pin Functions PIN NAME TYPE DESCRIPTION DBZ LPG GND 3 2 GND VCC 1 1 Power 2.5 to 38 V power supply. Bypass this pin to the GND pin with a 0.01-μF (minimum) ceramic capacitor rated for VCC. OUT 2 3 Output Hall sensor analog output. 1 V output corresponds to B = 0 mT Ground pin Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 3 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) VCC Power supply voltage MIN MAX UNIT –22 (2) 40 V Voltage ramp rate (VCC), VCC < 5 V Unlimited Voltage ramp rate (VCC), VCC > 5 V Output pin voltage Output pin reverse current during reverse supply condition V/µs 0 2 –0.5 2.5 V –20 mA 0 Magnetic flux density, BMAX Unlimited Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Ensured by design. Only tested to –20 V. 6.2 ESD Ratings VALUE Electrostatic discharge V(ESD) (1) (2) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2500 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX 2.5 38 UNIT VCC Power supply voltage V VOUT Output pin voltage (OUT) 0 2 V ISOURCE Output pin current source (OUT) 0 300 µA ISINK Output pin current sink (OUT) 0 2.3 mA TA Operating ambient temperature –40 125 °C 6.4 Thermal Information DRV5053 THERMAL METRIC (1) DBZ (SOT-23) LPG (TO-92) 3 PINS 3 PINS UNIT RθJA Junction-to-ambient thermal resistance 333.2 180 °C/W RθJC(top) Junction-to-case (top) thermal resistance 99.9 98.6 °C/W RθJB Junction-to-board thermal resistance 66.9 154.9 °C/W ψJT Junction-to-top characterization parameter 4.9 40 °C/W ψJB Junction-to-board characterization parameter 65.2 154.9 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (VCC) VCC VCC operating voltage ICC Operating supply current ton Power-on time 2.5 VCC = 2.5 to 38 V, TA = 25°C 38 2.7 VCC = 2.5 to 38 V, TA = 125°C 3 3.6 35 50 V mA µs PROTECTION CIRCUITS VCCR Reverse supply voltage –22 V IOCP,SOURCE Overcurrent protection level Sourcing current 300 µA IOCP,SINK Overcurrent protection level Sinking current 2.3 mA 6.6 Switching Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 13 25 UNIT ANALOG OUTPUT (OUT) td Output delay time TA = 25°C µs 6.7 Magnetic Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER VQ Quiescent output ƒBW Bandwidth TEST CONDITIONS B = 0 mT TA = –40°C to 125°C (2) MIN TYP MAX UNIT (1) 0.9 1.02 1.15 V 20 BN Input-referred noise (3) COUT = 50 pF TA = –40°C to 125°C Le Linearity (4) –BSAT < B < BSAT VOUT MIN Output saturation voltage (min) B < –BSAT VOUT MAX Output saturation voltage (max) B > BSAT 0.40 kHz 0.49 0.79 mTpp 0.2 V 1% 1.8 V DRV5053OA: –11 mV/mT S Sensitivity VCC = 3.3 V TA ≈ –40°C to 125°C VN Output-referred noise VCC = 3.3 V; ROUT = 10 kΩ; COUT = 50 pF TA ≈ –40°C to 125°C BSAT Input saturation field VCC = 3.3 V TA ≈ –40°C to 125°C –17.5 –11 –5 mV/mT 5 mVpp 73 mT DRV5053PA: –23 mV/mT S Sensitivity VCC = 3.3 V TA ≈ –40°C to 125°C VN Output-referred noise VCC = 3.3 V; ROUT = 10 kΩ; COUT = 50 pF TA ≈ –40°C to 125°C 11 mVpp BSAT Input saturation field VCC = 3.3 V TA ≈ –40°C to 125°C 35 mT (1) (2) (3) (4) –35 –23 –10 mV/mT 1 mT = 10 Gauss Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output. Not tested in production; limits are based on characterization data. Linearity describes the change in sensitivity across the B-range. The sensitivity near BSAT is typically within 1% of the sensitivity near B = 0. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 5 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com Magnetic Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (1) –70 –45 –20 mV/mT DRV5053RA: –45 mV/mT S Sensitivity VCC = 3.3 V TA ≈ –40°C to 125°C VN Output-referred noise VCC = 3.3 V; ROUT = 10 kΩ; COUT = 50 pF TA ≈ –40°C to 125°C 22 mVpp BSAT Input saturation field VCC = 3.3 V TA ≈ –40°C to 125°C 18 mT DRV5053VA: –90 mV/mT S Sensitivity VCC = 3.3 V TA ≈ –40°C to 125°C VN Output-referred noise VCC = 3.3 V; ROUT = 10 kΩ; COUT = 50 pF TA ≈ –40°C to 125°C BSAT Input saturation field VCC = 3.3 V TA ≈ –40°C to 125°C –140 –90 –45 mV/mT 44 mVpp 9 mT DRV5053CA: 23 mV/mT S Sensitivity VCC = 3.3 V TA ≈ –40°C to 125°C VN Output-referred noise VCC = 3.3 V; ROUT = 10 kΩ; COUT = 50 pF TA ≈ –40°C to 125°C 11 mVpp BSAT Input saturation field VCC = 3.3 V TA ≈ –40°C to 125°C 35 mT 10 23 35 mV/mT DRV5053EA: 45 mV/mT S Sensitivity VCC = 3.3 V TA ≈ –40°C to 125°C VN Output-referred noise VCC = 3.3 V; ROUT = 10 kΩ; COUT = 50 pF TA ≈ –40°C to 125°C 22 mVpp BSAT Input saturation field VCC = 3.3 V TA ≈ –40°C to 125°C 18 mT 6 Submit Documentation Feedback 20 45 70 mV/mT Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 6.8 Typical Characteristics 3.5 TA ± ƒ& TA = 25°C TA = 75°C TA = 125°C Supply Current (mA) Supply Current (mA) 3.5 3 2.5 VCC = 2.5 V VCC = 3.3 V VCC = 13.2 V VCC = 38 V 3 2.5 2 0 10 20 Supply Voltage (V) 30 2 -50 40 -25 Figure 1. ICC vs VCC 60 DRV5053EA 125 D010 DRV5053EA 40 Magnetic Sensitivity (mV/mT) 40 M a g n e tic S e n s itivity (m V /m T ) 100 Figure 2. ICC vs Temperature 60 DRV5053CA 20 0 DRV5053OA DRV5053PA -20 DRV5053RA -40 -60 -80 0 DRV5053CA 20 0 DRV5053OA -20 DRV5053PA -40 DRV5053RA -60 -80 DRV5053VA -100 DRV5053VA -100 10 20 Supply Voltage (V) 30 -120 -50 40 -25 D001 TA = 25°C 0 25 50 75 Ambient Temperature (°C) 100 125 D002 VCC = 3.3 V Figure 3. Sensitivity vs VCC Figure 4. Sensitivity vs Temperature 1.035 0.7 1.03 0.65 Input-Referred Noise (mTpp) Quiescent Voltage VQ (V) 0 25 50 75 Ambient Temperature (°C) D009 1.025 1.02 1.015 1.01 TA ± ƒ& TA = 25°C 1.005 TA = 85°C TA = 125°C 0.6 0.55 0.5 0.45 0.4 0.35 1 0.995 0 10 20 Supply Voltage (V) TA = 25°C 30 40 0.3 -50 -25 0 25 50 75 Ambient Temperature (°C) 100 D003 125 D004 VCC = 3.3 V Figure 5. VQ vs VCC Figure 6. BN vs Temperature Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 7 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com 7 Detailed Description 7.1 Overview The DRV5053 device is a chopper-stabilized Hall sensor with an analog output for magnetic sensing applications. The DRV5053 device can be powered with a supply voltage between 2.5 and 38 V, and will survive –22 V reverse battery conditions continuously. Note that the DRV5053 device will not be operating when approximately –22 to 2.4 V is applied to VCC (with respect to GND). In addition, the device can withstand supply voltages up to 40 V for transient durations. The output voltage is dependent on the magnetic field perpendicular to the package. The absence of a magnetic field will result in OUT = 1 V. A magnetic field will cause the output voltage to change linearly with the magnetic field. The field polarity is defined as follows: a south pole near the marked side of the package is a positive magnetic field. A north pole near the marked side of the package is a negative magnetic field. For devices with a negative sensitivity (that is, DRV5053RA: –40 mV/mT), a south pole will cause the output voltage to drop below 1 V, and a north pole will cause the output to rise above 1 V. For devices with a positive sensitivity (that is, DRV5053EA: +40 mV/mT), a south pole will cause the output voltage to rise above 1 V, and a north pole will cause the output to drop below 1 V. 7.2 Functional Block Diagram 2.5 ± 38 V CVCC VCC Regulated Supply Bias Offset Cancel Hall Element Temperature Compensation + - OUT Output Driver COUT Optional RC Filtering GND 8 Submit Documentation Feedback ROUT Equivalent impedance to ground Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 7.3 Feature Description 7.3.1 Field Direction Definition A positive magnetic field is defined as a south pole near the marked side of the package as shown in Figure 7. SOT-23 (DBZ) TO-92 (LPG) B > 0 mT B < 0 mT B > 0 mT B < 0 mT N S N S S N S N 1 2 3 1 2 3 (Bottom view) N = North pole, S = South pole Figure 7. Field Direction Definition 7.3.2 Device Output The DRV5053 device output is defined below for negative sensitivity (that is, –45 mV/mT, RA) and positive sensitivity (that is, +45 mV/mT, EA): VOUT (V) VMAX VQ VMIN –BSAT (N) B (mT) BSAT (S) Figure 8. DRV5053 – Negative Sensitivity VOUT (V) VMAX VQ VMIN –BSAT (N) B (mT) BSAT (S) Figure 9. DRV5053 – Positive Sensitivity Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 9 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com Feature Description (continued) 7.3.3 Power-On Time After applying VCC to the DRV5053 device, ton must elapse before OUT is valid. Figure 10 shows Case 1 and Figure 11 shows case 2; the output is defined assuming a negative sensitivity device and a constant magnetic field –BSAT < B < BSAT. Case #1 VCC t (s) B (mT) BSAT t (s) -BSAT OUT 90% Invalid Output Valid Output t (s) tON Figure 10. Case 1: Power On When B < 0, North Case #2 VCC t (s) B (mT) BSAT t (s) -BSAT OUT Invalid Output Valid Output 10% t (s) tON Figure 11. Case 2: Power On When B > 0, South 10 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 Feature Description (continued) 7.3.4 Output Stage The DRV5053 output stage is capable of up to 300-μA of current source or 2.3-mA sink. For proper operation, ensure that equivalent output load ROUT > 10 kΩ. The capacitive load directly present on the OUT pin should be less than 10 nF to ensure the internal operational amplifier is stable. If an external RC filter is added to reduce noise, it is acceptable to use a resistor ≥ 200 Ω with a capacitor ≤0.1 µF. For an application example, see Filtered Typical Application. 7.3.5 Protection Circuits An analog current limit circuit limits the current through the output driver. The driver current will be clamped to IOCP 7.3.5.1 Overcurrent Protection (OCP) An analog current-limit circuit limits the current through the FET. The driver current is clamped to IOCP. During this clamping, the rDS(on) of the output FET is increased from the nominal value. 7.3.5.2 Load Dump Protection The DRV5053 device operates at DC VCC conditions up to 38 V nominally, and can additionally withstand VCC = 40 V. No current-limiting series resistor is required for this protection. 7.3.5.3 Reverse Supply Protection The DRV5053 device is protected in the event that the VCC pin and the GND pin are reversed (up to –22 V). NOTE In a reverse supply condition, the OUT pin reverse-current must not exceed the ratings specified in the Absolute Maximum Ratings. Table 1. FAULT CONDITION DEVICE DESCRIPTION RECOVERY FET overload (OCP) ISINK ≥ IOCP Operating Output current is clamped to IOCP IO < IOCP Load Dump 38 V < VCC < 40 V Operating Device will operate for a transient duration VCC ≤ 38 V Reverse Supply –22 V < VCC < 0 V Disabled Device will survive this condition VCC ≥ 2.5 V 7.4 Device Functional Modes The DRV5053 device is active only when VCC is between 2.5 and 38 V. When a reverse supply condition exists, the device is inactive. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 11 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The DRV5053 device is used in magnetic-field sensing applications. 8.2 Typical Applications 8.2.1 Typical Application With No Filter 2 OUT 3 VCC 1 VCC C1 0.01 µF (minimum) Figure 12. Typical Application Schematic – No Filter 8.2.1.1 Design Requirements For this design example, use the parameters listed in Table 2 as the input parameters. Table 2. Design Parameters DESIGN PARAMETER REFERENCE EXAMPLE VALUE System bandwidth ƒBW 15 kHz 8.2.1.2 Detailed Design Procedure The DRV5053 has internal filtering that limits the bandwidth to at least 20 kHz. For this application no external components are required other than the C1 bypass capacitor, which is 0.01 µF minimum. If the analog output OUT is tied to a microcontroller ADC input, the equivalent load must be R > 10 kΩ and C < 10 nF. Table 3. External Components COMPONENT PIN 1 PIN 2 RECOMMENDED C1 VCC GND A 0.01-µF (minimum) ceramic capacitor rated for VCC 12 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 8.2.1.3 Application Curve Figure 13. 10-kHz Switching Magnetic Field 8.2.2 Filtered Typical Application For lower noise on the analog output OUT, additional RC filtering can be added to further reduce the bandwidth. C2 1500 pF 2 OUT R1 10 kΩ 3 1 VCC VCC C1 0.01 µF (minimum) Figure 14. Filtered Typical Application Schematic 8.2.2.1 Design Requirements For this design example, use the parameters listed in Table 4 as the input parameters. Table 4. Design Parameters DESIGN PARAMETER REFERENCE EXAMPLE VALUE System bandwidth ƒBW 5 kHz Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 13 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com 8.2.2.2 Detailed Design Procedure In this example we will add an external RC filter in order to reduce the output bandwidth. In order to preserve the signal at the frequencies of interest, we will conservatively select a low-pass filter bandwidth (–3-dB point) at twice the system bandwidth (10 kHz). 1 10 kHz 2p ´ R1 ´ C2 (1) If we guess R1 = 10 kΩ, then C2 < 1590 pF. So we select C2 = 1500 pF. 8.2.2.2.1 Typical Noise Versus Cutoff Frequency RC filters are an effective way to reduce the noise present on OUT. The following shows typical noise measurements for different cutoff frequencies using the DRV5053VA. Table 5. DRV5053VA Typical Noise Data R (Ω) C (µF) fCUTOFF (kHz) NOISE (mVpp) 163 0.1 9.8 30.4 349 0.1 4.6 22.8 750 0.1 2.1 15.2 1505 0.1 1.1 9.7 3322 0.1 0.5 5.3 7510 0.1 0.2 2.5 8.2.2.3 Application Curves 0 -2 Magnitude (dB) -4 -6 -8 -10 -12 -14 100 200 500 1000 2000 5000 10000 Frequency (Hz) R1 = 10-kΩ pullup Figure 15. 5-kHz Switching Magnetic Field 100000 D011 C2 = 680 pF Figure 16. Low-Pass Filtering 9 Power Supply Recommendations The DRV5053 device is designed to operate from an input voltage supply (VM) range between 2.5 and 38 V. A 0.01-µF (minimum) ceramic capacitor rated for VCC must be placed as close to the DRV5053 device as possible. 14 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 DRV5053 www.ti.com SLIS153C – MAY 2014 – REVISED DECEMBER 2015 10 Device and Documentation Support 10.1 Device Support 10.1.1 Device Nomenclature Figure 17 shows a legend for reading the complete device name for the DRV5053 device. DRV5053 (RA) (Q) (DBZ) (R) () Prefix DRV5053: Analog linear Hall sensor AEC-Q100 Q1: Automotive qualification Blank: Non-auto Sensitivity OA: ±11 mV/mT PA: ±23 mV/mT RA: ±45 mV/mT VA: ±90 mV/mT CA: +23 mV/mT EA: +45 mV/mT Tape and Reel R: 3000 pcs/reel T: 250 pcs/reel M: 3000 pcs/box (ammo) Blank: 1000 pcs/bag (bulk) Package DBZ: 3-pin SOT-23 LPG: 3-pin TO-92 Temperature Range Q: ±40 to 125°C E: ±40 to 150°C Figure 17. Device Nomenclature 10.1.2 Device Markings Marked Side 3 Marked Side Front 1 1 2 3 2 Marked Side 1 2 3 (Bottom view) Figure 18. SOT-23 (DBZ) Package Figure 19. TO-92 (LPG) Package indicates the Hall effect sensor (not to scale). The Hall element is located in the center of the package with a tolerance of ±100 µm. The height of the Hall element from the bottom of the package is 0.7 mm ±50 µm in the DBZ package and 0.987 mm ±50 µm in the LPG package. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 15 DRV5053 SLIS153C – MAY 2014 – REVISED DECEMBER 2015 www.ti.com 10.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 10.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 10.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 10.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 11 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 16 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DRV5053 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) DRV5053CAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALCA, 1LX2) DRV5053CAQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALCA, 1LX2) DRV5053CAQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALCA DRV5053CAQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALCA DRV5053EAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALEA, 1LZ2) DRV5053EAQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALEA, 1LZ2) DRV5053EAQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALEA DRV5053EAQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALEA DRV5053OAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALOA, 1M12) DRV5053OAQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALOA, 1M12) DRV5053OAQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALOA DRV5053OAQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALOA DRV5053PAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALPA, 1M22) DRV5053PAQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALPA, 1M22) DRV5053PAQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALPA DRV5053PAQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALPA DRV5053RAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALRA, 1M32) DRV5053RAQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALRA, 1M32) DRV5053RAQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALRA DRV5053RAQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALRA Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 10-Dec-2020 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) DRV5053VAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALVA, 1M42) DRV5053VAQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+ALVA, 1M42) DRV5053VAQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALVA DRV5053VAQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +ALVA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of